JPH02306615A - Resist coating method - Google Patents

Abstract

PURPOSE:To uniformly coat resist on a wafer by making the whole part of a wafer mounting surface uniformly vacuum-sucked when the resist is coated on the wafer surface. CONSTITUTION:A semiconductor wafer 1 is vacuum-sucked and mounted on a rotary retainer; from above the wafer 1, resist liquid is dripped by a nozzle 4, thereby coating resist 3 on the wafer 1 surface. At this time, the resist 3 is coated while the whole part of the mounting surface of the wafer 1 is uniformly vacuum-sucked. Thereby the resist 3 of uniform thickness can be coated in a region on the wafer 1 where an element is effectively formed, so that uniform pattern formation in the wafer 1 is enabled, and highly precise semiconductor devices can be subjected to mass-production.

Description

[Detailed Description of the Invention] [Summary] It is an object of the present invention to provide a resist coating method that uniformly coats a resist onto a wafer, particularly regarding a resist spin code method used in the manufacture of semiconductor devices. For the purpose of applying resist to the wafer surface by placing a semiconductor wafer on a rotating support under vacuum suction and dropping a resist solution from above the wafer, the entire surface of the wafer is uniformly coated. The structure is to perform vacuum adsorption.

[Industrial application field]

The present invention relates to a resist coating method, and more particularly to a resist spin-coding method used in the manufacture of semiconductor devices.

2. Description of the Related Art In recent years, as semiconductors have become more highly integrated, circuit patterns forming semiconductor elements have become finer, and control and uniformity of the pattern width has become extremely important. Furthermore, since individual semiconductor chips are cut out from a wafer, it is necessary to keep the pattern width within the wafer uniform in order to eliminate individual differences in semiconductors. Therefore, the photoresist used to form a pattern on the wafer also needs to be applied more uniformly onto the wafer.

[Conventional technology]

Conventionally, a spin code method has been used for resist coating, in which a resist 3 is applied from a nozzle 4 while a wafer 1 is rotated, as shown in FIG. In this conventional spin code method, the center of the wafer 1 is attracted by the vacuum suction check 2 to rotate the wafer 1.

[Problem to be solved by the invention]

In the conventional spin code method, as described above, only the center portion of the wafer 1 is vacuum-suctioned, so that the wafer on the vacuum chuck 2 becomes colder than the portion that is not suctioned. As a result, during resist application, the volatility of the resist solvent differs between the center part of the vacuum chuck part and other parts, and as a result, the film thickness of the applied resist at the center part is approximately 2.
The problem was that the number of people was 0.00 to 300 people thick (Figure 4).
.

An object of the present invention is to provide a resist coating method for uniformly coating a resist on a wafer.

[Means for Solving the Problem] According to the present invention, the above problem is solved by placing a semiconductor wafer on a rotating support under vacuum suction, and applying a resist onto the surface of the wafer by dropping a resist solution from above the wafer. In this case, the problem is solved by a resist coating method characterized in that the entire surface of the mounting surface of the wafer is vacuum-adsorbed uniformly. Furthermore, according to the present invention, the above-mentioned problem is solved when a semiconductor wafer is placed on a rotating support by vacuum suction and a resist is applied to the surface of the wafer by dropping a resist solution from above the wafer. This problem is solved by a resist coating method characterized in that only the peripheral edge of the mounting surface is vacuum-adsorbed.

[For production]

According to the present invention, local thermal failure (cooling) due to the vacuum suction chuck does not occur in the element formation region of the wafer, so that uniform coating of the resist becomes possible.

〔Example〕

Embodiments of the present invention will be described below based on the drawings.

FIG. 1 is a sectional view for explaining one embodiment of the present invention.

As shown in FIG. 1, in this embodiment, a resist 3 is applied from a nozzle 4 while a vacuum suction chuck 2 with a degree of vacuum of about 600 mmHg is applied to almost the entire back surface of a wafer 1. That is, the vacuum suction chuck part in the center where conventional resist was applied thickly is expanded to the entire surface to maintain uniformity in thickness. It was found that the variation in the thickness of the resist coated in this example was about 10, which was improved compared to the conventional method.

Next, a second embodiment will be explained using FIG. 2.

Figure 2 shows the vacuum suction chuck 2 only around the back side of the wafer.
The resist 3 is applied from the nozzle 4 while the resist 3 is applied.

The suction position in this embodiment was, for example, approximately 3 to 5 mm from the outer peripheral edge of a 6-inch diameter wafer.

In this example, the peripheral edge of the wafer, which is the suction part, was thickly coated with the wafer as in the conventional case, but since the thick resist-coated portion was not used (removed), a resist film with a substantially uniform thickness was obtained.

[Effects of the Invention] - As explained above, according to the present invention, it is possible to apply a resist to a uniform thickness in the area on the wafer where elements are effectively formed, and as a result, the resist can be coated uniformly within the wafer. This greatly contributes to the mass production of high-precision semiconductor devices by making it possible to form patterns.

[Brief explanation of the drawing]

1 and 2 are sectional views for explaining the first and second embodiments of the present invention, respectively, and FIGS. 3 and 4 are sectional views for explaining the prior art. 1...Wafer, 2...Vacuum suction check, 3...Photoresist, 4...Nozzle.

Claims (1)

[Claims] 1. A semiconductor wafer is placed on a rotating support by vacuum suction,
A resist coating method, characterized in that when resist is applied to the wafer surface by dropping a resist solution from above the wafer, the entire surface of the mounting surface of the wafer is vacuum-adsorbed uniformly. 2. Place the semiconductor wafer on a rotating support by vacuum suction,
A resist coating method characterized in that when resist is applied to the wafer surface by dropping a resist solution from above the wafer, only the peripheral edge of the mounting surface of the wafer is vacuum-adsorbed.