JPH10261578A - Resist-applying device - Google Patents

Resist-applying device

Info

Publication number
JPH10261578A
JPH10261578A JP6789197A JP6789197A JPH10261578A JP H10261578 A JPH10261578 A JP H10261578A JP 6789197 A JP6789197 A JP 6789197A JP 6789197 A JP6789197 A JP 6789197A JP H10261578 A JPH10261578 A JP H10261578A
Authority
JP
Japan
Prior art keywords
resist
wafer
resist liquid
resist solution
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6789197A
Other languages
Japanese (ja)
Inventor
Shigeru Kasatani
茂 笠谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP6789197A priority Critical patent/JPH10261578A/en
Publication of JPH10261578A publication Critical patent/JPH10261578A/en
Pending legal-status Critical Current

Links

Landscapes

  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce the amount of resist liquid to be disposed by providing a leveling apparatus for spreading a dripped resist liquid for a device for applying the resist liquid to a substrate by dripping the resist liquid on a substrate on a rotary chuck and shaking off a surplus resist liquid by rotation. SOLUTION: When a nearly circular wafer 2 is centered and is placed on a rotary chuck 1 and is fixed by vacuum suction, a nozzle 3 drips a specific amount of resist liquid from the upper part of the center of the wafer 2. However, the amount of drip is relatively small. The nozzle 3 retracts, at the same time, a blade 4 advances to the center of the wafer 2 with a small gap, a rotary chuck 1 is rotated at a low speed, and at the same time the blade 4 moves in the radius direction of the wafer 2 and levels the resist liquid toward the outer periphery of the wafer 2, and levels and spreads the resist to the outer periphery and then retracts, thus reducing the amount of dripping of the resist liquid.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は半導体装置の製造
工程等において使用される基板にレジスト液を塗布する
装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for applying a resist solution to a substrate used in a semiconductor device manufacturing process or the like.

【0002】[0002]

【従来の技術】従来の例えば半導体ウェーハにレジスト
液を塗布するレジスト塗布装置の例を説明する。図3は
従来のレジスト塗布装置の要部側面図である。回転チャ
ック1上にウェーハ2を載置し、真空チャックすると、
ノズル3が待機場所より回転チャック1の中心上に移動
し、停止状態もしくは低速で回転しているウェーハ上に
所定量のレジスト液を滴下する。その後回転チャックが
中速度で回転して滴下したレジスト液をウェーハ全面に
拡げ、高速回転に切り変わり余分なレジスト液を振り切
ることで、所定の厚みの塗布が行なわれる。
2. Description of the Related Art An example of a conventional resist coating apparatus for applying a resist solution to a semiconductor wafer, for example, will be described. FIG. 3 is a side view of a main part of a conventional resist coating apparatus. When the wafer 2 is placed on the rotary chuck 1 and vacuum chucked,
The nozzle 3 moves from the standby position to the center of the rotary chuck 1 and drops a predetermined amount of resist solution onto the wafer which is stopped or rotating at a low speed. Thereafter, the rotating chuck is rotated at a medium speed to spread the dropped resist solution over the entire surface of the wafer, and is switched to a high-speed rotation to shake off excess resist solution, thereby performing coating with a predetermined thickness.

【0003】[0003]

【発明が解決しようとする課題】ところがこのような従
来のレジスト塗布装置ではウェーハの中心あたりに滴下
したレジスト液が均一に拡がるとは限らず、滴下量が少
ないと塗布出来てない部分が生じる。塗布出来ていない
部分が再現よく生じないようにするには滴下量を十分多
くする必要がある。従って実際にウェーハに塗布される
レジスト液の10倍以上は捨てている。そこで、この発
明は捨てるレジスト液の量を少なくしたレジスト塗布装
置を提供する。
However, in such a conventional resist coating apparatus, the resist liquid dropped at the center of the wafer does not always spread uniformly, and if the amount of the dropped liquid is small, a portion that cannot be coated occurs. In order to prevent the unapplied portion from being produced with good reproducibility, it is necessary to increase the dripping amount sufficiently. Therefore, 10 times or more of the resist solution actually applied to the wafer is discarded. Therefore, the present invention provides a resist coating apparatus in which the amount of the resist solution to be discarded is reduced.

【0004】[0004]

【課題を解決するための手段】この発明は回転チャック
上の基板にレジスト液を滴下して回転して余分なレジス
ト液を振り切ることによってレジスト液を基板に塗布す
るレジスト塗布装置において、滴下したレジスト液を拡
げるならし器具を備えることを特徴とする。上記の装置
によれば基板にレジスト液を滴下した後ならし器具によ
りほぼ基板全面拡げた後に回転チャックを高速回転して
余分なレジスト液を振り切るようにするので、レジスト
液の滴下量を少なくしても塗布できていない部分の発生
がなくなる。
SUMMARY OF THE INVENTION The present invention is directed to a resist coating apparatus for applying a resist solution to a substrate by dropping the resist solution onto a substrate on a rotary chuck and rotating to shake off excess resist solution. It is characterized by having a leveling device for spreading the liquid. According to the above apparatus, after the resist liquid is dropped on the substrate, the rotating chuck is rotated at a high speed to shake off the excess resist liquid after almost the entire substrate is spread by a leveling tool, so that the amount of the resist liquid dropped is reduced. However, the generation of unapplied portions is eliminated.

【0005】[0005]

【発明の実施の形態】この発明のレジスト塗布装置を図
面を参照して説明する。図1はこの発明の一実施例の要
部側面図である。回転チャック1やノズル3は従来の装
置と同様である。特徴的にはならし器具の一例としてブ
レード4を備える。ブレード4は基板例えばウェーハ1
の中心にノズル3より滴下したレジスト液(図示せず)
をウェーハ全面に拡げる機能を有する。ブレード4はレ
ジスト液滴下後所定の退避場所からウエーハ2の中心上
方にウェーハ表面から所定のギャップ(例えば10μm
〜数十μm)をもって進出しウェーハの半径方向にギャ
ップを保って移動しレジスト液をウェーハ全面に拡げて
退避する。ブレード4は弗素樹脂のようなレジスト液に
濡れない材質にすべきである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A resist coating apparatus according to the present invention will be described with reference to the drawings. FIG. 1 is a side view of a main part of an embodiment of the present invention. The rotary chuck 1 and the nozzle 3 are the same as in the conventional apparatus. The blade 4 is characteristically provided as an example of the leveling device. The blade 4 is a substrate such as a wafer 1
Liquid (not shown) dropped from nozzle 3 at the center of
Has the function of spreading the entire surface of the wafer. The blade 4 moves a predetermined gap (for example, 10 μm) from the surface of the wafer to a position above the center of the wafer 2 from a predetermined retreat place after dropping the resist droplet.
(Several tens of μm) and moves while keeping a gap in the radial direction of the wafer, and spreads the resist solution over the entire surface of the wafer and retracts. The blade 4 should be made of a material that does not wet the resist solution, such as a fluorine resin.

【0006】次にこの装置の動作の説明に伴って装置の
構成やブレード4に付いてさらに詳細に説明する。回転
チャック1上に略円形なウェーハ2がセンタリングされ
て載置され真空吸着で固定されると、ノズル3が待機場
所からウェーハ2の中心の上方に進出し、所定量のレジ
スト液(図示せず)を滴下する。但し滴下量は従来装置
に比較して小量となっている。レジスト液の滴下が終わ
ればノズル3は所定の退避場所に退避する退避場所はノ
ズル3の先端でレジスト液が乾燥しないようにレジスト
の溶剤雰囲気としたり、溶剤にノズル3の先端を浸した
りする。ノズル3が退避するとともに図2に示す装置の
要部平面図のようにブレード4が所定の退避場所からウ
ェーハ2の中心上に小さなギャップを持って進出する。
そして回転チャック2が低速で回転すると共にブレード
4がウェーハ2の半径方向に移動してレジスト液(図示
せず)をウェーハ2の外周へ向け均して行く。ブレード
4は周方向から傾いた方向に配置し、ウェーハ2が回転
により最初に近付く側をウェーハの中心に近く、後で近
付く方を中心から遠くしてレジスト液が外方に移動する
ようにする。そしてブレード4はウェーハ2の外周まで
レジストを均して拡げた後所定の待機場所に退避する。
退避場所において付着したレジスト液を洗浄するためレ
ジスト液を溶かす溶剤に漬けておく。そしてブレード4
が退避すると共に回転チャック1が高速回転してウェー
ハ2上の余分なレジスト液を振りきり均一な塗布厚とす
る。
Next, the structure of the apparatus and the blade 4 will be described in further detail with the description of the operation of the apparatus. When a substantially circular wafer 2 is centered and placed on the rotary chuck 1 and fixed by vacuum suction, the nozzle 3 advances from the standby position to above the center of the wafer 2 and a predetermined amount of resist solution (not shown) ) Is dropped. However, the drop amount is smaller than that of the conventional apparatus. When the dropping of the resist solution is completed, the nozzle 3 retracts to a predetermined retreat location. The retreat location is set at a resist solvent atmosphere so that the resist solution does not dry at the tip of the nozzle 3, or the tip of the nozzle 3 is immersed in a solvent. As the nozzle 3 retreats, the blade 4 advances from a predetermined retreat location to the center of the wafer 2 with a small gap as shown in the plan view of the main part of the apparatus shown in FIG.
Then, the rotating chuck 2 rotates at a low speed, and the blade 4 moves in the radial direction of the wafer 2 to level a resist solution (not shown) toward the outer periphery of the wafer 2. The blade 4 is arranged in a direction inclined from the circumferential direction, so that the side where the wafer 2 first comes close by rotation is close to the center of the wafer, and the side that comes close later is far from the center so that the resist solution moves outward. . Then, the blade 4 spreads the resist uniformly to the outer periphery of the wafer 2 and then retreats to a predetermined standby place.
In order to wash the resist solution adhering at the evacuation area, the resist solution is immersed in a solvent that dissolves the resist solution. And blade 4
And the rotating chuck 1 rotates at a high speed so that the excess resist solution on the wafer 2 is swept off to obtain a uniform coating thickness.

【0007】この実施例によれば、ならし器具としての
ブレード4がレジスト液をウェーハ全面に均し、しかも
ブレード4はレジスト液に濡れない材質としているので
ブレード4によるレジスト液の持ち出しも少なく、レジ
スト液の滴下量を少なくできる。
According to this embodiment, the blade 4 as a leveling tool evens out the resist solution over the entire surface of the wafer, and the blade 4 is made of a material that does not wet the resist solution. The amount of the resist solution dropped can be reduced.

【0008】上記の実施例によれば、ならし器具として
ブレード4を使用したが、柔らかいブラシとすることが
できる。ブラシの材料はやはり、レジスト液に濡れない
ものがレジスト液の持ち出しを少なくする面から好まし
い。
According to the above embodiment, the blade 4 is used as the leveling tool, but a soft brush can be used. The material of the brush is preferably not wet with the resist solution, from the viewpoint of reducing the take-out of the resist solution.

【0009】柔らかいブラシを用いればウェーハに接触
してもかまわないのでブレードのように微細なギャップ
を得るために適用するウェーハの厚みがかわるたびに高
さを調節する煩わしさがなくなる利点がある。しかしな
がら、ブラシに付着して持ちさられるレジスト液はブレ
ードに比較して多くなる。
If a soft brush is used, it may be in contact with the wafer, so that there is an advantage that the trouble of adjusting the height every time the thickness of the wafer applied to obtain a fine gap like a blade is changed is eliminated. However, the amount of the resist liquid attached to the brush and held is larger than that of the blade.

【0010】[0010]

【発明の効果】以上説明したようにこの発明によれば、
レジスト液の滴下量を少なくし、レジスト液の消費を少
なくする。
As described above, according to the present invention,
The amount of the resist solution dropped is reduced, and the consumption of the resist solution is reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 この発明の一実施例の要部側面図である。FIG. 1 is a side view of a main part of an embodiment of the present invention.

【図2】 その平面図である。FIG. 2 is a plan view thereof.

【図3】 従来の装置の要部側面図である。FIG. 3 is a side view of a main part of a conventional device.

【符号の説明】[Explanation of symbols]

1 回転チャック 2 ウェーハ(基板) 4 ブレード(ならし器具) 1 Rotary chuck 2 Wafer (substrate) 4 Blade (leveling instrument)

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】回転チャック上の基板にレジスト液を滴下
して回転して余分なレジスト液を振り切ることによって
レジスト液を基板に塗布するレジスト塗布装置におい
て、滴下したレジスト液を拡げるならし器具を備えるこ
とを特徴とするレジスト塗布装置。
In a resist coating apparatus for applying a resist solution to a substrate by dropping the resist solution onto a substrate on a rotary chuck and rotating to shake off excess resist solution, an apparatus for spreading the dropped resist solution is provided. A resist coating apparatus, comprising:
【請求項2】前記ならし器具はレジスト液が滴下された
前記基板が低速回転している際に前記基板の表面上をギ
ャップを以て中心から外方にむけ移動するブレードであ
る請求項1のレジスト塗布装置。
2. The resist according to claim 1, wherein said leveling tool is a blade which moves from the center to the outside with a gap on the surface of said substrate when said substrate on which the resist solution is dropped is rotating at a low speed. Coating device.
【請求項3】前記ならし器具はレジスト液が滴下された
前記基板が低速回転している際に前記基板の表面上を中
心から外方にむけ移動するブラシである請求項1のレジ
スト塗布装置。
3. The resist coating apparatus according to claim 1, wherein said leveling tool is a brush which moves outward from a center on the surface of the substrate when the substrate on which the resist solution is dropped is rotating at a low speed. .
JP6789197A 1997-03-21 1997-03-21 Resist-applying device Pending JPH10261578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6789197A JPH10261578A (en) 1997-03-21 1997-03-21 Resist-applying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6789197A JPH10261578A (en) 1997-03-21 1997-03-21 Resist-applying device

Publications (1)

Publication Number Publication Date
JPH10261578A true JPH10261578A (en) 1998-09-29

Family

ID=13357978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6789197A Pending JPH10261578A (en) 1997-03-21 1997-03-21 Resist-applying device

Country Status (1)

Country Link
JP (1) JPH10261578A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010089090A (en) * 1999-01-14 2010-04-22 Nok Kluber Kk Method for forming coating layer
WO2014057568A1 (en) * 2012-10-11 2014-04-17 サンデン株式会社 Method for applying coating for sliding on a disc-shaped substrate
CN109789440A (en) * 2016-09-27 2019-05-21 富士胶片株式会社 The manufacturing method of film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010089090A (en) * 1999-01-14 2010-04-22 Nok Kluber Kk Method for forming coating layer
JP4502073B2 (en) * 1999-01-14 2010-07-14 Nokクリューバー株式会社 Coating layer forming method
WO2014057568A1 (en) * 2012-10-11 2014-04-17 サンデン株式会社 Method for applying coating for sliding on a disc-shaped substrate
JPWO2014057568A1 (en) * 2012-10-11 2016-08-25 サンデンホールディングス株式会社 Method of applying sliding paint to disk-shaped substrate
US9586230B2 (en) 2012-10-11 2017-03-07 Sanden Holdings Corporation Method of coating lubrication paint on disk-shaped substrate
CN109789440A (en) * 2016-09-27 2019-05-21 富士胶片株式会社 The manufacturing method of film

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