JPS6223581Y2 - - Google Patents
Info
- Publication number
- JPS6223581Y2 JPS6223581Y2 JP19822984U JP19822984U JPS6223581Y2 JP S6223581 Y2 JPS6223581 Y2 JP S6223581Y2 JP 19822984 U JP19822984 U JP 19822984U JP 19822984 U JP19822984 U JP 19822984U JP S6223581 Y2 JPS6223581 Y2 JP S6223581Y2
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- coating
- cap
- coating liquid
- cylinder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011248 coating agent Substances 0.000 claims description 55
- 238000000576 coating method Methods 0.000 claims description 55
- 239000007788 liquid Substances 0.000 claims description 28
- 239000002904 solvent Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 20
- 239000003795 chemical substances by application Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Landscapes
- Coating Apparatus (AREA)
Description
【考案の詳細な説明】
本考案は、基板(ガラス、半導体ウエハー)回
転塗布装置の塗布液(塗布拡散剤、ホトレジスト
液)滴下用ノズル部の塗布液中の溶剤の揮散を防
止する構造に関する。[Detailed Description of the Invention] The present invention relates to a structure for preventing volatilization of a solvent in a coating liquid in a nozzle portion for dropping a coating liquid (coating diffusion agent, photoresist liquid) in a spin coating device for a substrate (glass, semiconductor wafer).
半導体集積回路の製造工程においては、不純物
拡散時の半導体ウエハーへの塗布拡散剤の塗布や
ホトレジスト膜の形成には、主として半導体ウエ
ハー上に拡散剤やホトレジスト液等の塗布液をス
ピンドル(回転円板)の回転遠心力を利用するこ
とにより、半導体ウエハー全面に塗布する回転塗
布装置が一般に使用されている。この回転塗布装
置は、スピンドルの上面に半導体ウエハーを吸着
させて保持し、スピンドルの回転を停止させた状
態で半導体ウエハー表面の中心に塗布液を滴下し
た後にスピンドルを回転させ、そのスピンドルの
回転遠心力により塗布液を全面に拡がらせ、同時
に不要な液をウエハー外へ飛散させ、半導体ウエ
ハー表面に均一な厚さで拡散剤膜やホトレジスト
膜を形成している。 In the manufacturing process of semiconductor integrated circuits, coating solutions such as diffusion agents and photoresist solutions are mainly applied onto semiconductor wafers using a spindle (rotating disk ) Rotary coating equipment is generally used that coats the entire surface of a semiconductor wafer by utilizing the rotational centrifugal force. This spin coating device attracts and holds a semiconductor wafer on the upper surface of a spindle, drops the coating solution onto the center of the semiconductor wafer surface with the spindle stopped rotating, and then rotates the spindle to perform a centrifugal centrifuge. The force spreads the coating liquid over the entire surface and at the same time scatters unnecessary liquid to the outside of the wafer, forming a diffusion agent film or photoresist film with a uniform thickness on the semiconductor wafer surface.
然しながら、前記塗布膜を自動塗布装置により
形成する場合には、塗布液を半導体ウエハーに滴
下してスピンドル回転により処理した後、次の半
導体ウエハーに取り替えて塗布液を滴下から滴下
までの間に時間を要した場合に、塗布液用ノズル
部の大気に触れている塗布液中の溶剤が揮散し
て、その為にノズル部の塗布液粘度が変化する。 However, when forming the coating film using an automatic coating device, the coating solution is dropped onto a semiconductor wafer and processed by rotating the spindle, and then the next semiconductor wafer is replaced and the coating solution is applied for a period of time between drops. When this is necessary, the solvent in the coating liquid that is in contact with the atmosphere at the coating liquid nozzle portion evaporates, thereby changing the viscosity of the coating liquid at the nozzle portion.
かかる粘度の変化はきわめてわずかであつても
回転塗布による被膜形成時の膜厚に大きく影響を
及ぼし、拡散剤塗布の場合は拡散濃度のバラツキ
となり、そしてホトレジストの場合は膜厚の不均
一によつてホトレジストに対する露光がその内部
で歪みを受け、従つて正確な露光が行えない結
果、高精度の徴細パターンを得ることは極めて困
難となる。 Even if such a change in viscosity is extremely small, it greatly affects the film thickness when a film is formed by spin coating, causes variations in diffusion concentration when coating with a diffusing agent, and causes uneven film thickness in the case of photoresist. As a result, the exposure of the photoresist is internally distorted, and as a result, accurate exposure cannot be performed, and as a result, it is extremely difficult to obtain a fine pattern with high precision.
従つて、本考案の目的は、自動塗布装置におけ
るノズル部周辺の構造を変えることにより、ノズ
ル部の塗布液中の溶剤揮散を防ぎ、塗布液粘度変
化をなくすことで、膜厚を半導体ウエハー全面に
わたつて均一に塗布できる自動塗布装置を提供す
ることにある。 Therefore, the purpose of the present invention is to prevent solvent volatilization in the coating liquid at the nozzle and eliminate changes in coating liquid viscosity by changing the structure around the nozzle in automatic coating equipment, thereby increasing the film thickness over the entire surface of the semiconductor wafer. An object of the present invention is to provide an automatic coating device capable of uniformly coating the entire surface.
上記目的に従い本考案は、ノズル部での溶剤揮
散を防ぐために塗布液滴下用ノズルを第1シリン
ダーにより上下方向の一定距離間移動するよう
に、また上記ノズル下面と接合して密閉構造とす
るための上方の開放されたキヤツプをキヤツプ底
に溶剤が貯留されるようになさしめると共に第2
シリンダーにより水平移動するように設けしめ、
不使用時はスピンドル上方の一定高さ位置でノズ
ル下面に蓋をしてノズルの周囲を常時溶剤蒸気雰
囲気となるようにし、塗布液の滴下時はノズルと
キヤツプとの接合を解放すると共に、ノズルを基
板上近くまで下降させて塗布液を滴下するように
構成したことを特徴とするものである。 In accordance with the above object, the present invention has a structure in which the coating liquid dripping nozzle is moved by a first cylinder for a certain distance in the vertical direction in order to prevent solvent volatilization at the nozzle part, and the nozzle is connected to the lower surface of the nozzle to form a sealed structure. The upper open cap allows the solvent to be stored at the bottom of the cap, and the second
It is installed so that it can be moved horizontally by a cylinder,
When not in use, cover the bottom of the nozzle at a certain height above the spindle to maintain a solvent vapor atmosphere around the nozzle at all times.When dropping coating liquid, release the connection between the nozzle and the cap, and close the nozzle. The device is characterized in that it is configured to be lowered close to the top of the substrate and drop the coating liquid thereon.
以下、本考案を図面により説明する。 The present invention will be explained below with reference to the drawings.
第1図は半導体ウエハー1に塗布液5を滴下し
ている状態を示し、第2図は塗布液5を滴下して
いない状態で、ノズル4をキヤツプ底に溶剤が貯
留されたキヤツプ6で蓋をしてノズル部の溶剤揮
散を防止している状態を示す。 Fig. 1 shows a state in which the coating liquid 5 is being dropped onto a semiconductor wafer 1, and Fig. 2 shows a state in which the coating liquid 5 is not being dropped, and the nozzle 4 is covered with a cap 6 in which a solvent is stored at the bottom of the cap. This shows the state in which the solvent is prevented from volatilizing at the nozzle.
第1図及び第2図においてその動作説明をすれ
ば、半導体ウエハー1はスピンドル2により真空
チヤツクされ、第1シリンダー10が縮まること
によりノズル4はノズル支持棒9を通して半導体
ウエハー1の近くまで下がり、ノズル4より塗布
液5を滴下する。そして滴下が終了するとノズル
4は、第1シリンダー10が伸びることにより上
限まで移動し、次に第2シリンダー8が伸びるこ
とによりキヤツプ支持棒7を通してキヤツプ6は
ノズル4の下まで移動する。そして、第1シリン
ダー10の両端の空気供給口を開放にすればノズ
ル4とノズル支持棒9は自重により下降するので
ノズル4はキヤツプ6で蓋ができる。そして又、
次に塗布液を滴下する時は、第1シリンダー10
を伸し、ノズル4を上限に移動してから第2シリ
ンダー8を縮めることによりキヤツプ6がノズル
4より離れ、そして第1シリンダー10を縮める
ことによりノズル4を下限まで下降させて塗布液
5を滴下する。 To explain the operation in FIGS. 1 and 2, the semiconductor wafer 1 is vacuum chucked by the spindle 2, and as the first cylinder 10 contracts, the nozzle 4 passes through the nozzle support rod 9 and descends close to the semiconductor wafer 1. The coating liquid 5 is dropped from the nozzle 4. When the dripping is finished, the nozzle 4 moves to the upper limit by extending the first cylinder 10, and then by extending the second cylinder 8, the cap 6 moves to below the nozzle 4 through the cap support rod 7. If the air supply ports at both ends of the first cylinder 10 are opened, the nozzle 4 and the nozzle support rod 9 will descend due to their own weight, so the nozzle 4 can be covered by the cap 6. And again,
Next, when dropping the coating liquid, use the first cylinder 10.
By extending the nozzle 4 and moving the nozzle 4 to the upper limit, and then retracting the second cylinder 8, the cap 6 is separated from the nozzle 4. Then, by retracting the first cylinder 10, the nozzle 4 is lowered to the lower limit, and the coating liquid 5 is released. Drip.
以上の工程を繰り返すことにより、滴下間隔が
変つても一定粘度の塗布液を滴下することができ
る為、均一な塗布膜が形成できる。そして又、ノ
ズル4が上下に可動する為に塗布液を半導体ウエ
ハー1へ可及的に近づけて滴下できることによつ
て、塗布液滴下時の溶剤揮散も少なくなり、溶剤
揮散の大きいアルコール等の溶剤を使用した塗布
拡散剤でも塗布むらのない均一な塗布膜を形成で
きるものである。 By repeating the above steps, it is possible to drop a coating liquid with a constant viscosity even if the drop interval changes, so that a uniform coating film can be formed. Furthermore, since the nozzle 4 can move up and down, the coating liquid can be dropped as close as possible to the semiconductor wafer 1, which reduces the volatilization of the solvent when the coating liquid is dropped. It is possible to form a uniform coating film with no uneven coating even with a coating/diffusing agent using .
第3図はノズル4がキヤツプ6により蓋をされ
た状態の拡大図を示し、ノズル4がキヤツプ6に
より蓋をされると、ノズル4とキヤツプ6で囲ま
れた部分に溶剤11と塗布液5より溶剤が揮散し
て徐々に充満し、飽和状態になると揮散しなくな
るので、粘性の上昇を防止することができる。 FIG. 3 shows an enlarged view of the nozzle 4 covered with the cap 6. When the nozzle 4 is covered with the cap 6, the solvent 11 and the coating liquid 5 are deposited in the area surrounded by the nozzle 4 and the cap 6. As more solvent evaporates, it gradually fills up, and when it reaches a saturated state, it no longer evaporates, making it possible to prevent an increase in viscosity.
本考案者は、塗布液としてアルコール溶剤使用
の塗布拡散剤を用い、溶剤としてアルコールを使
用して半導体ウエハー上に塗布実験をした結果、
キヤツプを使用しない従来方式では塗布拡散剤を
滴下して次に滴下するまでの時間が2分間でノズ
ル部の溶剤に粘度変化をおこし、塗布むらとなつ
ていた半導体ウエハーが、本考案のキヤツプを使
用して上記塗布拡散剤を塗布すると、塗布拡散剤
の滴下から次の滴下までの時間が12時間経過して
も、なお、ノズル部の粘度変化がおこらず、半導
体ウエハーへの塗布むらは発生しなかつた。 The present inventor conducted a coating experiment on a semiconductor wafer using a coating dispersion agent using an alcohol solvent as a coating solution, and using alcohol as a solvent.
With the conventional method that does not use a cap, the viscosity of the solvent at the nozzle changes in the two minutes it takes from one drop of the coating dispersant to the next, resulting in uneven coating on semiconductor wafers. When using the coating dispersion agent mentioned above, even after 12 hours have elapsed from one drop of the coating dispersion agent to the next, the viscosity of the nozzle part does not change, resulting in uneven coating on the semiconductor wafer. I didn't.
以上説明したように本考案によれば、塗布液の
溶剤揮散を防止して、粘度の部分的変化をなくす
ことができるために、塗布液滴下の間隔が変つて
も常に一定の塗布膜厚となり、拡散剤塗布の場合
には、常に均一な拡散剤膜を形成できるために、
拡散濃度のバラツキがなくなり、特性の均一な半
導体を作ることができる。そして又、ホトレジス
ト塗布の場合も常に均一でむらのないホトレジス
ト膜が形成できるために、特に徴細パターンを必
要とするとき、その効果は顕著である。 As explained above, according to the present invention, it is possible to prevent solvent volatilization of the coating solution and eliminate local changes in viscosity, so even if the interval between drops of the coating solution changes, the coating film thickness remains constant. When applying a diffusing agent, a uniform diffusing agent film can always be formed.
This eliminates variations in diffusion concentration, making it possible to create semiconductors with uniform characteristics. Furthermore, in the case of photoresist coating, a uniform and even photoresist film can always be formed, so the effect is remarkable especially when a fine pattern is required.
本考案は、半導体ウエハーに限らず、ガラスマ
スク、その他金属板などの基板に塗布液を塗布す
る場合であつても同様の効果を得ることができ
る。 The present invention is not limited to semiconductor wafers, and similar effects can be obtained even when applying a coating liquid to substrates such as glass masks and other metal plates.
図面は本考案を示す断面図で、第1図は半導体
ウエハーに塗布液を滴下している状態を示す動作
説明図、第2図はノズルをキヤツプで蓋をして溶
剤揮散を防止している動作説明図、第3図はノズ
ルがキヤツプにより蓋をされた状態の拡大図であ
る。
1……半導体ウエハ、2……スピンドル、3…
…受皿、4……ノズル、5……塗布液、6……キ
ヤツプ、7……キヤツプ支持棒、8……第2シリ
ンダー、9……ノズル支持棒、10……第1シリ
ンダー、11……溶剤、12……溶剤蒸気、13
……ホース、14……容器。
The drawings are cross-sectional views showing the present invention. Figure 1 is an explanatory diagram showing the state in which the coating liquid is being dropped onto a semiconductor wafer, and Figure 2 is an illustration of the nozzle being covered with a cap to prevent solvent volatilization. FIG. 3 is an enlarged view of the nozzle covered with a cap. 1... Semiconductor wafer, 2... Spindle, 3...
... saucer, 4 ... nozzle, 5 ... coating liquid, 6 ... cap, 7 ... cap support rod, 8 ... second cylinder, 9 ... nozzle support rod, 10 ... first cylinder, 11 ... Solvent, 12...Solvent vapor, 13
...Hose, 14...Container.
Claims (1)
ル上方位置で第1シリンダーにより上下方向に一
定距離移動するように設けしめるのほか、そのノ
ズル下面に蓋をして密閉構造とするためのキヤツ
プをキヤツプ底に溶剤が貯留されるようになさし
めると共に第2シリンダーにより水平移動するよ
うに設け、不使用時はスピンドル上方の一定高さ
位置でノズル下面に蓋をしてノズル周囲が溶剤蒸
気雰囲気となるようにし、また塗布液の滴下時に
は第2シリンダーの作動でノズルとキヤツプとの
接合を解放すると共に、第1シリンダーの作動で
ノズルを基板上へ可及的に近づくよう下降せしめ
て塗布液滴下が行われるように構成したことを特
徴とする回転塗布装置。 In addition to installing a downward facing nozzle for dispensing the coating liquid at a position above the spindle so that it can be moved a certain distance in the vertical direction by the first cylinder, a cap is installed at the bottom of the cap to cover the bottom surface of the nozzle and create a sealed structure. The solvent is stored in the nozzle, and it is moved horizontally by a second cylinder.When not in use, the bottom surface of the nozzle is covered at a certain height above the spindle to create a solvent vapor atmosphere around the nozzle. When the coating liquid is dripped, the second cylinder is activated to release the connection between the nozzle and the cap, and the first cylinder is activated to lower the nozzle as close to the substrate as possible, allowing the coating liquid to drip. A rotary coating device characterized in that it is configured so that it can be coated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19822984U JPS60136777U (en) | 1984-12-29 | 1984-12-29 | Rotary coating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19822984U JPS60136777U (en) | 1984-12-29 | 1984-12-29 | Rotary coating device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60136777U JPS60136777U (en) | 1985-09-11 |
JPS6223581Y2 true JPS6223581Y2 (en) | 1987-06-16 |
Family
ID=30757043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19822984U Granted JPS60136777U (en) | 1984-12-29 | 1984-12-29 | Rotary coating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60136777U (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0795514B2 (en) * | 1987-06-30 | 1995-10-11 | 富士通株式会社 | Resist coating device |
JP4626196B2 (en) * | 2004-07-05 | 2011-02-02 | セイコーエプソン株式会社 | Droplet discharge device and method of manufacturing electro-optical device |
-
1984
- 1984-12-29 JP JP19822984U patent/JPS60136777U/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60136777U (en) | 1985-09-11 |
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