JPH01281729A - Development and etching treatment device - Google Patents

Abstract

PURPOSE:To improve accuracy of pattern dimensions by placing one nozzle at a position corresponding to the center of revolution of a substrate to be machined of a nozzle head rotating, and a plurality of nozzles whose diameter expands toward an outer concentric circle at each specified position on a plurality of concentric circles with the nozzle being located at the center. CONSTITUTION:A nozzle 10a is provided at the center of a nozzle head 10 for discharging chemical solution provided at the upper part of a mounting base 3 in parallel corresponding to a substrate 1 to be machined, eight nozzles 10b are provided on the periphery with a radius r1 in reference to the nozzle 10a at equal distance each, eight nozzles 10c are provided on the periphery with a radius r2 and then eight nozzles 10d are provided on the periphery with a radium r3. Each diameter is different in this case. Then, each nozzle 10a-10d are connected to a tank 14 placed at the outside of device by a pipe 13 which is branched in a thickness corresponding to each nozzle diameter. Also, the nozzle diameter is made larger as going away from the center of rotation. It allows pattern formation with less dimensional scattering to be made over the enter surface of a substrate to be machined.

Description

[Detailed Description of the Invention] [Summary] Regarding development and etching processing equipment for manufacturing patterning masks and wafers necessary for semiconductor devices, the purpose of this invention is to improve the precision of pattern dimensions and eliminate variations, and to A developing process in which a chemical solution is injected from a nozzle onto the upper surface of a substrate to be processed that rotates around the center, causing a chemical reaction in the film formed on the substrate to form a predetermined pattern on the substrate. The etching processing apparatus includes one nozzle at a position corresponding to the rotation center of the rotating workpiece substrate of a nozzle head disposed parallel to and facing the surface of the workpiece substrate that is being rotated; A plurality of nozzles whose diameters increase toward the outer concentric circles are arranged at predetermined positions on a plurality of concentric circles, respectively, and a chemical liquid of the same pressure is injected from each nozzle to form a structure.

[Industrial application field]

The present invention relates to a patterning mask and wafer manufacturing apparatus used in manufacturing semiconductor devices, and more particularly to a developing/etching processing apparatus that improves the accuracy of pattern dimensions and eliminates variations.

As semiconductor devices have become more densely integrated in recent years, the dimensions of each pattern within a semiconductor device have become increasingly finer. is required to be suppressed.

However, in conventional developing and etching processing equipment, the thickness of the developing and etching chemicals applied to the substrate to be processed, such as a buttering mask and wafer, is not uniform, so the speed of development and etching varies depending on the location. This causes a large variation in dimensions within the substrate to be processed, so a solution to this problem is desired.

[Conventional technology]

FIG. 2 is a side view showing an example of a method for supplying a chemical solution in a conventional apparatus, and in the figure, a developing process will be explained as an example.

In the figure, reference numeral 1 denotes a substrate to be processed, such as a patterning mask, having a diameter of several inches and a thickness of several mm, and a resist 2 having a thickness of approximately 1 μm that has already been subjected to vacuum exposure on the surface of the substrate 1. is covered.

Reference numeral 3 denotes a mounting table which rotates in the direction R shown in the figure with a rotating shaft 3a while keeping the horizontal position, and in the figure, the substrate 1 to be processed is placed on its upper surface with its center axis approximately aligned with the surface to which the resist 2 is attached upward. placed in condition.

Further, 4 is a nozzle for supplying a chemical solution with a hole diameter of about 5 mm, which is disposed about 50 nm above the center of rotation of the mounting table 3, and the nozzle 4 is installed outside the apparatus by a pipe 5. It is connected to tank 6.

Note that 7 indicated by a broken line indicates the outer shell of the device.

Here, the substrate 1 to be processed is placed on the above-mentioned mounting table 3, and while the mounting table 3 is rotated at a speed of about 100 rpm+ by the rotating shaft 3a, the chemical solution 6 is sent at a pressure of about 2 to 3 kg/ci. (In the case of the figure, for example, a developing solution with the trade name NMD-3 commercially available from Tokyo Applied Chemical Co., Ltd.) is supplied from the nozzle 4 to the substantially rotational center portion of the surface of the corrugated substrate 1 as indicated by the dotted line A.

Therefore, the chemical solution 6 flows to the periphery of the substrate 1 to be processed by the centrifugal force generated by the rotation of the substrate 1 while dissolving the exposed portion of the resist 2 formed on the surface of the substrate 1.

At this time, the circumferential speed of the workpiece plate 1 increases as it rotates toward its periphery, so the centrifugal force of the chemical liquid 6 flowing on the resist 2 increases, and the flow rate increases.
The thickness of the resist 2 becomes thinner, and the developing effect acting on the resist 2 is weakened.

- Since new developer is continuously supplied to the center of the surface of the substrate 1 to be processed, the development action continues.

As a result, when forming a pattern with a width of, for example, 1 μm over the entire surface of the substrate 1 to be processed, even if a pattern with a width of approximately 1.0 μm is formed in the central portion of the substrate 1 near the developer supply portion, In some cases, a pattern with a width of, for example, only 0.9 μm can be formed in the peripheral portion.

Such a phenomenon occurs not only in the above-mentioned development process, but also in an etching process using the resist pattern obtained in the above-mentioned development process.

As a result, the patterns formed on the patterning mask and wafer obtained in the final process have large dimensional variations between the center and peripheral parts, and the required variation range (
For example, within 0.1 μm).

[Problem to be solved by the invention]

Conventional developing and etching processing apparatuses have a problem in that the accuracy of pattern dimensions within the same substrate to be processed decreases and variations increase, making it impossible to keep the variations within a required range.

[Means for Solving the Problems] The above problem is solved by supplying a chemical solution injected from a nozzle onto the upper surface of a substrate to be processed, which is kept horizontal and rotates around the center of the surface, and is formed on the substrate. A developing/etching processing device that causes a chemical reaction in a film to form a predetermined pattern on the substrate, the nozzle head being disposed parallel to and facing the rotating surface of the substrate to be processed. One nozzle is disposed at a position corresponding to the rotation center, and a plurality of nozzles whose diameter increases toward the outer concentric circle are disposed at each predetermined position on a plurality of concentric circles centered on the nozzle, This problem can be solved by a developing/etching processing device that injects chemical liquid at the same pressure from each of the nozzles.

[For production]

By arranging the chemical liquid nozzles so that appropriate amounts of chemical liquid can be simultaneously supplied to a plurality of locations on the substrate to be processed, uniform development or etching processing can be performed over the entire surface of the substrate to be processed.

In the present invention, 25
The chemical is uniformly supplied to the entire surface of the substrate to be processed by ejecting the appropriate amount of the chemical at the same time from the nozzles at different locations.

Therefore, it is possible to form a pattern with little dimensional variation over the entire surface of the substrate to be processed.

〔Example〕

FIG. 1 is a diagram showing an example of the configuration of the main parts of the developing/etching processing apparatus according to the present invention, and (A) and (CB) also show the overall view.
FIG. 2 is a perspective view of the nozzle head portion viewed from the chemical liquid injection port side.

In Figures (A) and (B), as in the case of Figure 2, the substrate 1 to be processed, on which the resist 2 that has already been subjected to patterning exposure is adhered, is rotated in the direction R shown in the figure by the rotation axis 3a. 81 machines are installed on 3rd floor.

Reference numeral 10 denotes a nozzle head for ejecting a chemical liquid, which is disposed in parallel and facing the substrate 1 to be processed at a position approximately 50 mm above the mounting table 3, and the nozzle head 10 has a nozzle 10a at its center. Also, the radius r centered on the nozzle 10a
1, eight nozzles 10b are arranged at equal intervals on the circumference, with a radius r2.
Eight nozzles 10c are arranged at equal intervals on the circumference of
3, eight nozzles 10d are provided at equal intervals with different hole diameters, and each of these nozzles 10a to
10d is connected to a tank 14 installed outside the apparatus by a pipe 13 branched into a diameter corresponding to the diameter of each nozzle.

In the figure, a rod 10 is attached to the nozzle, and ring-shaped nozzle rings 11a, llb, llc, and lld, each of which is arranged as a through hole at a position that meets the above conditions, are arranged in a quadruple concentric circle shape by a spacing member 12. It is formed in a fixed position.

7 indicated by a broken line indicates the outer shell of the device as in FIG.

Here, the substrate l to be processed is placed on the above-mentioned mounting table, and the! !
The tank 14 installed outside the device is rotated by the rotating shaft 3a at a speed of about 1100 rpm.
As shown by the dotted line (each nozzle 10a = 10d), the same chemical solution 6 in FIG.
It is supplied to almost the entire surface of the substrate 1 to be processed.

In this case, as described above, the substrate 1 to be processed, that is, the resist 2
On the surface, the circumferential speed is lower at the center of rotation than at the periphery, so the centrifugal force of the chemical is small and there is little outflow of the chemical to the periphery, so the development process proceeds quickly.

On the other hand, near the outer periphery, the peripheral rotational speed is high, so much of the chemical solution flows out to the periphery, and the development process progresses slowly.

Therefore, in order to develop the entire surface of the substrate 1 to be processed at the same speed, it is desirable to change the amount of chemical solution supplied depending on the distance from the center of rotation, and the diameter of the nozzle is formed to be larger as the distance from the center of rotation increases. .

In other words, the pressure of the chemical solution is 4 kg/co! For example, if the diameter of the substrate 1 to be processed is 5 inches, the diameter of the nozzle 10a located at the center of the nozzle head 10 is dl, and the diameter of the nozzle 10b located on the circumference at a distance rl from the nozzle 10a. d2. The diameter of the nozzle 10c on the circumference separated by r2 from the nozzle 10a is d3, and the diameter of the nozzle 10c is r3 from the nozzle 10a.
When the diameter of the nozzle 10d on the circumference separated by d4 is a+ = 2. 5mm d2= 1.5mm (when r+ = about 10mm) d3=2.0nuw (when r2= about 30mm)
It has been confirmed that almost uniform development processing can be performed on the entire surface of the substrate 1 to be processed under the condition that d4=3.0 mm (when r3=45 mm or so).

Furthermore, such conditions should be applied not only to the development process but also to the etching process.

Therefore, it is possible to form a patterning mask or wafer in which the dimensional variation of the final pattern satisfies the required range (for example, ±0.1 μm).

〔Effect of the invention〕

As described above, according to the present invention, it is possible to provide a developing/etching apparatus that can keep variations in pattern dimensions of patterning masks and wafers used in manufacturing semiconductor devices within a required range.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing an example of the configuration of the main parts of a developing/etching processing apparatus according to the present invention, and FIG. 2 is a side view showing an example of a method of supplying a chemical solution in a conventional apparatus. In the figure, 1 is a substrate to be processed, 2 is a resist, 3 is a mounting table, 3a is a rotating shaft, 6 is a chemical solution, 7 is an outer shell of the device, 10 is a nozzle head, 10a to 10d are nozzles, and 11a to lid are nozzle rings. , 12 is the spacing rim, 13 is the pipe,
14 each represents a tank. (See Figure 1, Section 2.

Claims (1)

[Claims] A chemical solution injected from a nozzle is supplied to the upper surface of a substrate to be processed, which is kept horizontal and rotates around the center of the surface, to cause a chemical reaction in a film formed on the substrate. A developing/etching processing apparatus for forming a predetermined pattern on the substrate, the nozzle head being disposed parallel to and facing the surface of the rotating substrate to be processed, at a position corresponding to the center of rotation of the substrate to be processed. One nozzle, and a plurality of nozzles whose diameter increases as they move toward the outer concentric circles are arranged at predetermined positions on a plurality of concentric circles centered on the nozzle, and a chemical liquid of the same pressure is ejected from each nozzle. A developing/etching processing device characterized by injecting.