JP2580082B2 - Substrate rotation processing equipment - Google Patents

Substrate rotation processing equipment

Info

Publication number
JP2580082B2
JP2580082B2 JP3099373A JP9937391A JP2580082B2 JP 2580082 B2 JP2580082 B2 JP 2580082B2 JP 3099373 A JP3099373 A JP 3099373A JP 9937391 A JP9937391 A JP 9937391A JP 2580082 B2 JP2580082 B2 JP 2580082B2
Authority
JP
Japan
Prior art keywords
substrate
processing liquid
processing
nozzle
supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3099373A
Other languages
Japanese (ja)
Other versions
JPH04307724A (en
Inventor
昌宏 美作
守隆 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP3099373A priority Critical patent/JP2580082B2/en
Publication of JPH04307724A publication Critical patent/JPH04307724A/en
Application granted granted Critical
Publication of JP2580082B2 publication Critical patent/JP2580082B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、基板の現像処理前に基
板表面に純水や希釈現像液の薄膜を形成しておくプリウ
エット処理などのように、基板表面に処理液の薄膜を形
成する際に用いられる基板の回転処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a thin film of a processing solution on a substrate surface, such as a pre-wet process in which a thin film of pure water or a diluted developing solution is formed on the substrate surface before the development process of the substrate. The present invention relates to a substrate rotation processing apparatus used in the process.

【0002】[0002]

【従来の技術】基板の現像処理においては、現像液を回
転基板に供給する前に、基板表面に純水あるいは希釈し
た現像液の薄膜を予め形成して基板表面を湿潤状態にし
ておく、いわゆるプリウエット処理を施すことが均一な
現像を行う上で有効とされており、例えば特開昭56−
39540号公報で示されるように、回転する基板の中
心付近に表面湿潤用の処理液(公報ではリンス液と称さ
れる)を供給して拡散流動させることで、基板表面に処
理液の薄膜を形成する手段が提案されている。
2. Description of the Related Art In a substrate developing process, a thin film of pure water or a diluted developing solution is previously formed on a substrate surface to supply a developing solution to a rotating substrate, so that the substrate surface is wet. Pre-wet treatment is considered to be effective in performing uniform development.
As shown in Japanese Patent No. 39540, a processing liquid for surface wetting (referred to as a rinsing liquid in the publication) is supplied to the vicinity of the center of a rotating substrate to diffuse and flow, thereby forming a thin film of the processing liquid on the substrate surface. Means for forming have been proposed.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上述し
た従来装置は、単一のノズルを用いて表面湿潤用の処理
液を基板中心付近に供給するように構成されているの
で、次のような問題点がある。すなわち、回転する基板
においては、基板中心から基板外周へ行くほど周速度が
速くなる。そのため、基板中心部では供給された処理液
が外周部に比べて飛散しにくく残留しやすいという傾向
があり、逆に基板外周部では処理液が遠心力で飛散し乾
燥しやすいという傾向がある。このように、基板の内側
と外側とでは、処理液の拡散流動の傾向に差異があるの
で、基板中心部において均一な薄膜を生成するために基
板回転処理時間を長くすると、基板外周部において処理
液が乾燥してしまう。一方、基板外周部において均一な
薄膜を生成するために基板回転処理時間を短くすると、
基板中心部に過剰の処理液が残留してしまうという不都
合を生じる。このように、従来装置によれば、基板表面
の全体に均一な薄膜を生成することが困難であった。
However, the above-mentioned conventional apparatus is configured to supply the processing liquid for surface wetting to the vicinity of the center of the substrate by using a single nozzle. There is a point. That is, in a rotating substrate, the peripheral speed increases as going from the substrate center to the substrate outer periphery. Therefore, the supplied processing liquid tends to be less likely to be scattered and to remain at the center of the substrate than to the outer peripheral part, and conversely the processing liquid tends to be scattered and dried at the outer peripheral part of the substrate by centrifugal force. As described above, since there is a difference in the tendency of the diffusion and flow of the processing liquid between the inside and the outside of the substrate, if the substrate rotation processing time is increased in order to generate a uniform thin film at the center of the substrate, the processing is performed at the outer peripheral portion of the substrate. The liquid dries. On the other hand, if the substrate rotation processing time is shortened in order to generate a uniform thin film
There is a disadvantage that an excessive processing solution remains in the center of the substrate. Thus, according to the conventional apparatus, it was difficult to form a uniform thin film on the entire surface of the substrate.

【0004】本発明は、このような事情に鑑みてなされ
たものであって、基板表面に処理液の均一な薄膜を形成
することができる基板の回転処理装置を提供することを
目的としている。
The present invention has been made in view of such circumstances, and has as its object to provide a substrate rotation processing apparatus capable of forming a uniform thin film of a processing liquid on a substrate surface.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、本発明は次のような構成をとる。すなわち、本発明
は、回転台上に搭載保持されて回転する基板の表面に向
けて処理液を噴出供給して、基板表面に処理液の薄膜を
形成する基板の回転処理装置において、基板の回転中心
付近に向かうノズルと、回転中心から外周側に離れた箇
所に向かうノズルを用いて、基板表面の半径方向の異な
った複数箇所に処理液を噴出供給するよう構成するとと
もに、回転中心側のノズルから順に処理液供給を停止す
る処理液供給制御手段を備えたものである。
In order to achieve the above object, the present invention has the following arrangement. In other words, the present invention provides a substrate rotation processing apparatus that ejects and supplies a processing liquid toward the surface of a substrate that is mounted and held on a rotating table and rotates to form a thin film of the processing liquid on the substrate surface. Using a nozzle heading near the center and a nozzle heading away from the center of rotation on the outer periphery side, the processing liquid is ejected and supplied to a plurality of different locations on the substrate surface in the radial direction, and the nozzle on the rotation center side And a processing liquid supply control means for stopping the supply of the processing liquid in order.

【0006】[0006]

【作用】本発明の作用は次のとおりである。回転中心側
のノズルから順に処理液の供給を停止することにより、
処理液が残留しやすい基板中心部では処理液の供給時間
が比較的短くなり、一方、処理液が飛散しやすい基板外
周部では処理液の供給時間が比較的長くなる。すなわ
ち、基板各部の周速度に応じた量の処理液が供給される
結果、基板全体に処理液の均一な薄膜が形成される。
The operation of the present invention is as follows. By stopping the supply of the processing liquid in order from the nozzle on the rotation center side,
The supply time of the processing liquid is relatively short in the central portion of the substrate where the processing liquid is likely to remain, while the supply time of the processing liquid is relatively long in the outer peripheral portion of the substrate where the processing liquid is easily scattered. That is, as a result of supplying the processing liquid in an amount corresponding to the peripheral speed of each part of the substrate, a uniform thin film of the processing liquid is formed on the entire substrate.

【0007】[0007]

【実施例】以下、図面を参照して本発明に係る基板の回
転処理装置の一実施例を説明する。図1は、本実施例に
係る基板の回転処理装置、特にフォトレジスト塗布およ
び露光の終わった基板に対してプリウエット処理および
現像処理を行うための装置の縦断面図である。処理対象
である半導体ウエハなどの基板1は、縦軸心P周りに回
転駆動される真空チャック式の回転台2に搭載保持され
る。回転台2の上方には昇降可能な現像液供給ノズル3
があり、また回転台2の周囲はガードハウジング4で囲
われている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a substrate rotation processing apparatus according to the present invention will be described below with reference to the drawings. FIG. 1 is a longitudinal sectional view of a substrate rotation processing apparatus according to the present embodiment, in particular, an apparatus for performing a pre-wet processing and a development processing on a substrate after photoresist coating and exposure. A substrate 1 such as a semiconductor wafer to be processed is mounted and held on a rotary table 2 of a vacuum chuck type that is driven to rotate about a vertical axis P. Above the turntable 2, a developer supply nozzle 3 that can be moved up and down
The periphery of the turntable 2 is surrounded by a guard housing 4.

【0008】ガードハウジング4の外側にはプリウエッ
ト用処理液を供給するための2つのノズル5,6があ
る。下方のノズル5は、ガードハウジング4に形成され
た開口7を介してガードハウジング4内に噴出された処
理液が基板1の回転中心である前記縦軸心P付近に当た
るように、その方向が設定されている。ここで、縦軸心
P付近とは必ずしも回転中心に限定しないという意味で
あり、8インチの半導体ウエハの場合、好ましくは中心
から5mm程度離れたところである。ただし、中心から
の最適離間距離は、処理液の吐出圧や流量、その方向に
よって多少変わるので、一概に特定できない。要する
に、ノズル5から噴出されて基板1の表面に広がった処
理液の領域が回転中心を含んでいればよい。一方、上方
のノズル6は、ノズル5よりも半径方向の外方に離れた
箇所に向かうように、その噴射方向が設定されている。
具体的には、ノズル6から噴出された処理液が基板の回
転中心と周縁の中間付近(8インチウエハの場合、中心
から約50mmのところ)に当たるように、ノズル6の
方向が設定される。
Outside the guard housing 4, there are two nozzles 5 and 6 for supplying a pre-wet processing liquid. The direction of the lower nozzle 5 is set so that the processing liquid jetted into the guard housing 4 through the opening 7 formed in the guard housing 4 hits the vicinity of the vertical axis P which is the rotation center of the substrate 1. Have been. Here, the vicinity of the vertical axis P means not necessarily limited to the center of rotation. In the case of an 8-inch semiconductor wafer, it is preferably about 5 mm away from the center. However, the optimum distance from the center varies somewhat depending on the discharge pressure and flow rate of the processing liquid and the direction thereof, and thus cannot be specified unconditionally. In short, the region of the processing liquid ejected from the nozzle 5 and spread on the surface of the substrate 1 only needs to include the rotation center. On the other hand, the injection direction of the upper nozzle 6 is set so as to be directed to a position radially outwardly distant from the nozzle 5.
More specifically, the direction of the nozzle 6 is set so that the processing liquid ejected from the nozzle 6 hits near the center between the rotation center and the periphery of the substrate (about 50 mm from the center in the case of an 8-inch wafer).

【0009】両ノズル5,6は、図3に示すように、そ
れぞれが電磁開閉弁8,9を介して処理液圧送装置10
に配管接続されているとともに、各電磁開閉弁8,9が
処理液供給制御手段としての制御回路11によって開閉
制御されるようになっている。尚、電磁開閉弁8,9と
各ノズル5,6との間にはフィルタ12がそれぞれ介在
されて、処理液中の異物を除去するようになっている。
As shown in FIG. 3, the nozzles 5 and 6 are respectively connected to the processing liquid pressure feeding device 10 through electromagnetic on-off valves 8 and 9.
In addition, each of the electromagnetic on-off valves 8 and 9 is controlled to be opened and closed by a control circuit 11 as processing liquid supply control means. Note that filters 12 are interposed between the electromagnetic on-off valves 8 and 9 and the nozzles 5 and 6, respectively, to remove foreign substances in the processing liquid.

【0010】ノズル5,6を使ったプリウエット処理は
次のように行われる。現像処理を行う前に、電磁開閉弁
8,9を同時的に開状態にしてノズル5,6からプリウ
エット用処理液としての純水(あるいは希釈した現像
液)を基板1の表面に供給する。このとき、基板1は5
00〜1000回転/分で回転されている。処理液の供
給時間は概ね5秒程度である。そして、制御回路11の
制御によって、まずノズル5からの処理液の供給を停止
し、その後、0.5〜1秒遅れてノズル6からの処理液
の供給を停止する。ただし、ノズル5,6からの処理液
供給の最適な停止タイミングは、基板1の大きさや回転
数、さらには処理液の種類によって異なる。両ノズル
5,6からの処理液の供給を停止した後、基板1を70
0〜2000回転/分で約2秒間程度回転させて余剰の
処理液を飛散させ、基板1の表面に処理液の均一な薄膜
を形成する。以上のプリウエット処理を終えた後に、現
像液供給ノズル3を下降して現像液を供給し、基板の回
転現像処理を行う。
The pre-wet processing using the nozzles 5 and 6 is performed as follows. Before performing the developing process, the electromagnetic on / off valves 8 and 9 are simultaneously opened to supply pure water (or a diluted developing solution) as a pre-wet processing solution to the surface of the substrate 1 from the nozzles 5 and 6. . At this time, the substrate 1 is 5
It is rotated at 00 to 1000 revolutions / minute. The supply time of the processing liquid is about 5 seconds. Then, under the control of the control circuit 11, the supply of the processing liquid from the nozzle 5 is first stopped, and then the supply of the processing liquid from the nozzle 6 is stopped with a delay of 0.5 to 1 second. However, the optimal stop timing of the supply of the processing liquid from the nozzles 5 and 6 differs depending on the size and the number of rotations of the substrate 1 and the type of the processing liquid. After the supply of the processing liquid from both nozzles 5 and 6 is stopped,
The excess processing liquid is scattered by being rotated at about 0 to 2000 rotations / minute for about 2 seconds to form a uniform thin film of the processing liquid on the surface of the substrate 1. After the above pre-wet processing is completed, the developing liquid supply nozzle 3 is lowered to supply the developing liquid, and the rotary developing processing of the substrate is performed.

【0011】尚、上記の実施例では、処理液供給用のノ
ズルを2本用いる場合を示したが、基板1の寸法によっ
ては3本以上のノズルを利用してもよく、この場合も基
板中心側に向かうものから順に処理液の供給を停止する
ように制御する。また、実施例ではプリウエット処理を
例に採って説明したが、本発明は、これ限定されず、処
理液の薄膜を基板上に均一に形成する必要のある各種の
処理にも適用することができる。
In the above embodiment, two nozzles for supplying the processing liquid are used. However, three or more nozzles may be used depending on the size of the substrate 1. In this case, the center of the substrate is also used. The supply of the processing liquid is controlled to be stopped in order from the side toward the side. Further, in the embodiments, the pre-wet processing is described as an example, but the present invention is not limited to this, and can be applied to various kinds of processing in which a thin film of a processing liquid needs to be uniformly formed on a substrate. it can.

【0012】[0012]

【発明の効果】以上の説明から明らかなように、本発明
は、回転する基板の半径方向の異った複数箇所に向けて
処理液を噴出供給するとともに、その処理液供給の停止
を中心側から外周側に順に遅らせるようにしたので、周
速度の遅い基板中心部では処理液が残留するのが防止さ
れ、また周速度の速い基板外周部では処理液が過剰に飛
散するのが抑制され、もって基板表面全体に処理液を薄
膜を均一に形成することができる。
As is apparent from the above description, according to the present invention, the processing liquid is jetted and supplied to a plurality of different positions in the radial direction of the rotating substrate, and the stop of the processing liquid supply is performed on the center side. From the outer peripheral side, so that the processing liquid is prevented from remaining in the central part of the substrate having a low peripheral velocity, and the processing liquid is prevented from being excessively scattered in the peripheral part of the substrate having a high peripheral velocity, As a result, a thin film of the processing liquid can be uniformly formed on the entire surface of the substrate.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る基板の回転処理装置の一実施例を
示す縦断面図である。
FIG. 1 is a longitudinal sectional view showing one embodiment of a substrate rotation processing apparatus according to the present invention.

【図2】実施例の要部の斜視図である。FIG. 2 is a perspective view of a main part of the embodiment.

【図3】処理液供給手段の構成を示すブロック図であ
る。
FIG. 3 is a block diagram illustrating a configuration of a processing liquid supply unit.

【符号の説明】[Explanation of symbols]

1…基板 2…回転台 5,6…ノズル 11…制御回路(処理液供給制御手段) DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Rotary table 5, 6 ... Nozzle 11 ... Control circuit (processing liquid supply control means)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 回転台上に搭載保持されて回転する基板
の表面に向けて処理液を噴出供給して、基板表面に処理
液の薄膜を形成する基板の回転処理装置において、基板
の回転中心付近に向かうノズルと、回転中心から外周側
に離れた箇所に向かうノズルを用いて、基板表面の半径
方向の異なった複数箇所に処理液を噴出供給するよう構
成するとともに、回転中心側のノズルから順に処理液供
給を停止する処理液供給制御手段を備えたことを特徴と
する基板の回転処理装置。
1. A substrate rotation processing apparatus for ejecting and supplying a processing liquid toward a surface of a substrate mounted and held on a rotating table and rotating to form a thin film of the processing liquid on the substrate surface. Using a nozzle directed to the vicinity and a nozzle directed to a position distant from the rotation center to the outer peripheral side, the processing liquid is ejected and supplied to a plurality of different positions in the radial direction of the substrate surface, and from the nozzle on the rotation center side A substrate rotation processing apparatus comprising processing liquid supply control means for sequentially stopping the processing liquid supply.
JP3099373A 1991-04-04 1991-04-04 Substrate rotation processing equipment Expired - Fee Related JP2580082B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3099373A JP2580082B2 (en) 1991-04-04 1991-04-04 Substrate rotation processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3099373A JP2580082B2 (en) 1991-04-04 1991-04-04 Substrate rotation processing equipment

Publications (2)

Publication Number Publication Date
JPH04307724A JPH04307724A (en) 1992-10-29
JP2580082B2 true JP2580082B2 (en) 1997-02-12

Family

ID=14245736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3099373A Expired - Fee Related JP2580082B2 (en) 1991-04-04 1991-04-04 Substrate rotation processing equipment

Country Status (1)

Country Link
JP (1) JP2580082B2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5293850A (en) * 1976-02-04 1977-08-06 Hitachi Ltd Tilting pad bearing
JPS58102819A (en) * 1981-12-11 1983-06-18 Toshiba Corp Tilting pad bearing

Also Published As

Publication number Publication date
JPH04307724A (en) 1992-10-29

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