JPS63232431A - Development device - Google Patents
Development deviceInfo
- Publication number
- JPS63232431A JPS63232431A JP6670587A JP6670587A JPS63232431A JP S63232431 A JPS63232431 A JP S63232431A JP 6670587 A JP6670587 A JP 6670587A JP 6670587 A JP6670587 A JP 6670587A JP S63232431 A JPS63232431 A JP S63232431A
- Authority
- JP
- Japan
- Prior art keywords
- developer
- film
- photosensitive film
- nozzles
- holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000007921 spray Substances 0.000 claims description 9
- 238000005507 spraying Methods 0.000 abstract description 4
- 230000003292 diminished effect Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、半導体ウニ八等の表面に形成された感光性膜
の現像に利用される現像装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a developing device used for developing a photosensitive film formed on the surface of a semiconductor sea urchin or the like.
（従来の技術）
一般に、現像装置は、半導体ウェハ等の表面に形成され
た感光性膜に現像液を供給し、所定時間感光性膜と、現
像液とを接触させて、現像を行う。(Prior Art) Generally, a developing device supplies a developer to a photosensitive film formed on the surface of a semiconductor wafer or the like, and brings the photosensitive film into contact with the developer for a predetermined period of time to perform development.
第４図は、このような従来の現像装置の一例として、半
導体ウェハ上に形成された感光性膜の現像を行う現像装
置を示すもので、処理室１内には、真空チャック等で半
導体ウェハ２を保持する保持台３が配置されており、保
持台３上方には現像液を供給するための現像液供給ノズ
ル４およびリンス液を供給するためのリンス液供給ノズ
ル５が配置されている。なお、保持台３は、モータ等か
らなる回転機構３ａに接続されている。FIG. 4 shows a developing device for developing a photosensitive film formed on a semiconductor wafer as an example of such a conventional developing device. A holding stand 3 for holding the liquid crystal material 2 is disposed, and above the holding stand 3, a developer supply nozzle 4 for supplying a developer and a rinsing liquid supply nozzle 5 for supplying a rinsing liquid are disposed. Note that the holding table 3 is connected to a rotation mechanism 3a consisting of a motor or the like.
上記構成の従来の現像装置では、保持台３上に半導体ウ
ェハ２を載置し、真空チャック等で半導体ウェハ２をこ
の保持台３上に吸着させ、回転機１８３ ａにより例え
ば１０００ｒｐｎ程度で半導体ウェハ２を回転させなが
ら、現像液供給ノズル４から、例えばテトラメチルアン
モニウムハイドロオキサイドの３％溶液等の現像液を例
えば０．３秒間スプレィし、この後回転速度を例えば３
０ｒｐｍ程度として例えば３秒間程度スプレィし、この
後、回転を停止して所定の時間例えば６０秒現像を行う
。なお、現像液供給ノズル４からの現像液の流量は、例
えば０．３１／ｎｉｎ程度である。In the conventional developing device having the above configuration, the semiconductor wafer 2 is placed on the holding table 3, the semiconductor wafer 2 is adsorbed onto the holding table 3 by a vacuum chuck, etc., and the semiconductor wafer 2 is removed by the rotating machine 183a at about 1000 rpm, for example. 2, a developer such as a 3% solution of tetramethylammonium hydroxide is sprayed from the developer supply nozzle 4 for, for example, 0.3 seconds, and then the rotation speed is increased to, for example, 3.
Spraying is carried out at about 0 rpm for about 3 seconds, for example, and then the rotation is stopped and development is carried out for a predetermined period of time, for example 60 seconds. Note that the flow rate of the developer from the developer supply nozzle 4 is, for example, about 0.31/nin.
現像時間が経過すると、再び半導体ウェハ２を回転させ
、リンス液供給ノズル５から純水等のリンス液を供給し
、リンス操作を行った後、リンス液の供給を停止して、
半導体ウェハ２を回転させることにより乾燥を行う。After the development time has elapsed, the semiconductor wafer 2 is rotated again, a rinsing liquid such as pure water is supplied from the rinsing liquid supply nozzle 5, a rinsing operation is performed, and then the supply of the rinsing liquid is stopped.
Drying is performed by rotating the semiconductor wafer 2.
（発明が解決しようとする問題点）
しかしながら、上述の従来の現像装置では、次のような
問題がある。(Problems to be Solved by the Invention) However, the above-described conventional developing device has the following problems.
縦軸を感光性膜の未露光、部分の膜減り量、横軸を半導
体ウェハ中心からの距離とした第５図のグラフは、現像
液供給ノズルから流量０．３Ｊ２／１ｎで現像液を３．
３秒間スプレィし、この間、最初の０．３秒間は、回転
速度１０００ｒｐＨ、次の３秒間は３０ｒｐｍとし、こ
の後６０秒間現像を行った場合の半導体ウェハ各部にお
ける感光性膜の未露光部分の膜減り量を示している。The graph in Figure 5, in which the vertical axis is the unexposed portion of the photosensitive film, the amount of film loss in the area, and the horizontal axis is the distance from the center of the semiconductor wafer, shows that the developer is supplied from the developer supply nozzle at a flow rate of 3 J2/1n. ．．
Spraying for 3 seconds, during which the rotational speed was 1000 rpm for the first 0.3 seconds, 30 rpm for the next 3 seconds, and then developed for 60 seconds. It shows the amount of decrease.
このグラフに示されるように、従来の現像装置では、感
光性膜の未露光部分の膜減り量が、最大１９２．１ｎｉ
、最小１７２．８ｎ１１、平均１８４．２ｎｎ＋と多く
なる。また、この場合の標準偏差は５６．８で、感光性
膜の未露光部分の膜減り量が、半導体ウェハの中央部で
多く、周辺部で少なく不均一になる。As shown in this graph, with the conventional developing device, the amount of film loss in the unexposed portion of the photosensitive film is at most 192.1 ni.
, the minimum is 172.8n11, and the average is 184.2nn+. Further, the standard deviation in this case is 56.8, and the amount of film loss in the unexposed portion of the photosensitive film is large at the center of the semiconductor wafer and less at the periphery, making it non-uniform.
本発明は、かかる従来の事情に対処してなされたもので
、感光性膜の未露光部分の膜減り量を従来に比べて減少
させることができ、また、この膜減り量を均一化するこ
とのできる現像装置を提供しようとするものである。The present invention has been made in response to such conventional circumstances, and can reduce the amount of film loss in the unexposed portion of the photosensitive film compared to the conventional method, and can also make the amount of film loss uniform. The purpose of the present invention is to provide a developing device that can perform the following steps.
［発明の構成コ
（問題点を解決するための手段）
すなわち本発明の現像装置は、被処理物を保持する保持
部と、この保持部に保持された前記被処理物に向けて現
像液をスプレィする複数のノズルとを備えたことを特徴
とする。[Configuration of the Invention (Means for Solving Problems) In other words, the developing device of the present invention includes a holding part that holds an object to be processed, and a developing solution directed toward the object held in the holding part. A plurality of spray nozzles are provided.
（作 用）
一般に感光性膜の未露光部分の膜減り量は、ノズルから
スプレィされる現像液の液圧が高くなると多くなる傾向
にある。(Function) Generally, the amount of film loss in the unexposed portion of the photosensitive film tends to increase as the liquid pressure of the developer sprayed from the nozzle increases.
本発明の現像装置では、現像液を複数のノズルから被処
理物にスプレィし、ノズル１つ当たりの流量を減少させ
て現像液の液圧を減少させるとともに、スプレィされる
面内における液圧を均一化して、感光性膜の未露光部分
の膜減り量を従来に比べて減少および均一化する。In the developing device of the present invention, the developer is sprayed onto the processing object from a plurality of nozzles, and the flow rate per nozzle is reduced to reduce the fluid pressure of the developer, and at the same time, the fluid pressure in the sprayed surface is reduced. By making the photosensitive film uniform, the amount of film loss in the unexposed portion of the photosensitive film is reduced and made uniform compared to the conventional method.
（実施例）
以下本発明の現像装置を図面を参照して一実施例につい
て説明する。(Embodiment) An embodiment of the developing device of the present invention will be described below with reference to the drawings.
処理室１１内には、真空チャック等で半導体ウェハ１２
を保持する保持台１３が配置されており、保持台１３上
方には現像液を供給するための２つの現像液供給ノズル
１４ａ、１４ｂおよびリンス液を供給するためのリンス
液供給ノズル１５が配置されている。なお、保持台１３
は、モータ等からなる回転ｍ楕１３ａに接続されている
。A semiconductor wafer 12 is placed inside the processing chamber 11 using a vacuum chuck or the like.
A holding stand 13 for holding the holder 13 is arranged, and two developer supply nozzles 14a and 14b for supplying a developer and a rinsing liquid supply nozzle 15 for supplying a rinsing liquid are arranged above the holding stand 13. ing. In addition, the holding stand 13
is connected to a rotating m-ellipse 13a consisting of a motor or the like.
上記構成のこの実施例の現像装置で現像を行う場合は、
まず、保持台１３上に半導体ウェハ１２を載置し、真空
チャック等で半導体ウェハ１２をこの保持台１３上に吸
着させる。When developing with the developing device of this embodiment having the above configuration,
First, the semiconductor wafer 12 is placed on the holding table 13, and the semiconductor wafer 12 is attracted onto the holding table 13 using a vacuum chuck or the like.
次に、回転機構１３ａにより例えば１０（ｌｏｒｐｎ程
度で半導体ウェハ１２を回転させながら、現像液供給ノ
ズル１４ａ、１４ｂから、例えばテトラメチルアンモニ
ウムハイドロオキサイドの３％溶液等の現像液を例えば
０．３秒間スプレィし、この後回転速度を例えば３０ｒ
ｐＩｍ程度として例えば３秒間程度スプレィし、しかる
後、回転を停止して所定の時間例えば６０秒現像を行う
、なお、現像液供給ノズル１４ａ、１４ｂからの現像液
の流量は、例えばそれぞれ０．１２ 、Ｉ２／ｗｉｎ程
度である。Next, while the semiconductor wafer 12 is rotated by the rotating mechanism 13a at, for example, 10 (lorpn), a developer such as a 3% solution of tetramethylammonium hydroxide is applied for 0.3 seconds from the developer supply nozzles 14a and 14b. Spray, then increase the rotation speed to 30r, for example.
The spray is applied for about 3 seconds, for example, at about pIm, and then the rotation is stopped and development is carried out for a predetermined period of time, for example, 60 seconds.The flow rate of the developer from the developer supply nozzles 14a and 14b is, for example, 0.12, respectively. , about I2/win.
現像時間が経過した後、再び半導体ウェハ１２を回転さ
せ、リンス液供給ノズル１５から純水等のリンス液を供
給し、リンス操作を行い、この後、リンス液の供給を停
止して、半導体ウェハ１２を回転させることにより乾燥
を行う。After the development time has elapsed, the semiconductor wafer 12 is rotated again, a rinsing liquid such as pure water is supplied from the rinsing liquid supply nozzle 15, a rinsing operation is performed, and then the supply of the rinsing liquid is stopped and the semiconductor wafer Drying is performed by rotating 12.
縦軸を感光性膜の未露光部分の膜減り量、横軸を半導体
ウェハ中心からの距離とした第２図のグラフの曲線ａは
、上述のこの実施例の現像装置を用い、現像液供給ノズ
ル１４ａ、１４ｂからの現像液流量をそれぞれ０．１２
ｉ／ｌ１ｉｎ 、スプレィ時間３．３秒、停止現像時
間６０秒の現像操作を行った場合の感光性膜の未露光部
分の膜減り量を示している。なお、現像液スプレィ中の
半導体ウェハ１２の回転速度は、最初の０．３秒間１１
０００ｒｐ 、次の３秒間３０ｒｐＨである。Curve a in the graph of FIG. 2, in which the vertical axis is the amount of film loss in the unexposed portion of the photosensitive film and the horizontal axis is the distance from the center of the semiconductor wafer, indicates the amount of film loss in the unexposed portion of the photosensitive film using the developing device of this embodiment described above. The developer flow rate from nozzles 14a and 14b is 0.12, respectively.
It shows the amount of film loss in the unexposed portion of the photosensitive film when a developing operation was performed with i/l1in, spray time of 3.3 seconds, and stop development time of 60 seconds. Note that the rotation speed of the semiconductor wafer 12 during the developer spray is 11 for the first 0.3 seconds.
000 rpm and 30 rpm for the next 3 seconds.
このグラフの曲線ａに示されるように、この実施例の現
像装置では、感光性膜の未露光部分の膜減り量は、最大
１．７２．２ｎ１１、最小１６５．１ｒｌｌ、平均１６
８．６ｎｌｌと第４図のグラフに示した従来の現像装置
の場合に比べて少なくなる。ｔた、この場合の標準偏差
は、１．９８となり半導体ウェハ各部における感光性膜
の未露光部分の液域−り量を均一化することができる。As shown by curve a of this graph, in the developing device of this example, the amount of film reduction in the unexposed portion of the photosensitive film was 1.72.2n11 at maximum, 165.1rll at minimum, and 165.1rll on average.
8.6 nll, which is smaller than that of the conventional developing device shown in the graph of FIG. In addition, the standard deviation in this case is 1.98, which makes it possible to equalize the amount of liquid area in the unexposed portions of the photosensitive film in each part of the semiconductor wafer.
なお、上記実施例では、２つの現像液供給ノズル１４ａ
、１４ｂを備えた実施例について説明したが、本発明は
係る実施例に限定されるものではなく、現像液供給ノズ
ルの数は、２以上いくつとしてもよい。In addition, in the above embodiment, two developer supply nozzles 14a
, 14b has been described, but the present invention is not limited to this embodiment, and the number of developer supply nozzles may be two or more.
また、現像液供給ノズル１４ａ、１４ｂは、第３図に示
すように、駆動機構により図示矢印方向に移動させ、半
導体ウェハ１２表面に対する現像液のスプレィ角度を変
えるようにスキャンさせながら現像液をスプレィするよ
う構成することにより、第２図のグラフに曲線すで示す
ようにさらに未露光部分の膜減り量の減少および均一化
を図ることができる。Further, as shown in FIG. 3, the developer supply nozzles 14a and 14b are moved by a drive mechanism in the direction of the arrow in the figure, and spray the developer while scanning to change the spray angle of the developer on the surface of the semiconductor wafer 12. By configuring this, it is possible to further reduce and make uniform the amount of film loss in the unexposed portions, as shown by the curve in the graph of FIG.
［発明の効果コ
上述のように、本発明の現像装置では、感光性膜の未露
光部分の膜減り量を従来に比べて減少させることができ
、また、この膜減り量を均一化することができる。[Effects of the Invention] As described above, in the developing device of the present invention, the amount of film loss in the unexposed portion of the photosensitive film can be reduced compared to the conventional method, and the amount of film loss can be made uniform. Can be done.
第１図は本発明の一実施例の現像ｆｌｔ置を示す構成図
、第２図は感光性膜の未露光部分の膜減り量を示すグラ
フ、第３図は第１図に示す現像装置の変形例の説明図、
第４図は従来の現像装置を示す構成図、第５図は感光性
膜の未露光部分の膜減り量を示すグラフである。
１２・・・・・・半導体ウェハ、１３・・・・・・保持
台、１４ａ、１４ｂ・・・・・・現像液供給ノズル。
出願人 東京エレクトロン株式会社代理人
弁理士 須 山 佐 −
第］ ９
第２図
第３０
第４厘
第５図FIG. 1 is a block diagram showing the development flt position according to an embodiment of the present invention, FIG. 2 is a graph showing the amount of film loss in the unexposed portion of the photosensitive film, and FIG. 3 is a diagram showing the development apparatus shown in FIG. 1. An explanatory diagram of a modified example,
FIG. 4 is a block diagram showing a conventional developing device, and FIG. 5 is a graph showing the amount of film loss in an unexposed portion of a photosensitive film. 12... Semiconductor wafer, 13... Holding stand, 14a, 14b... Developer supply nozzle. Applicant Tokyo Electron Co., Ltd. Agent
Patent Attorney Suyama Sa - No. 9 Figure 2 Figure 30 Figure 4 Figure 5
Claims (3)
された前記被処理物に向けて現像液をスプレィする複数
のノズルとを備えたことを特徴とする現像装置。(1) A developing device comprising: a holding section that holds an object to be processed; and a plurality of nozzles that spray a developer toward the object held by the holding section.
物表面に対する現像液のスプレィ角度を変えながら前記
現像液を供給することを特徴とする特許請求の範囲第１
項記載の現像装置。(2) The nozzle is connected to a drive mechanism and supplies the developer while changing the spray angle of the developer to the surface of the object to be processed.
Developing device described in Section 1.
導体ウェハである特許請求の範囲第１項記載の現像装置
。(3) The developing device according to claim 1, wherein the object to be processed is a semiconductor wafer having a photosensitive film formed on its surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62066705A JPH0740545B2 (en) | 1987-03-20 | 1987-03-20 | Development method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62066705A JPH0740545B2 (en) | 1987-03-20 | 1987-03-20 | Development method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8098111A Division JP2864366B2 (en) | 1996-04-19 | 1996-04-19 | Method of developing object |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63232431A true JPS63232431A (en) | 1988-09-28 |
| JPH0740545B2 JPH0740545B2 (en) | 1995-05-01 |
Family
ID=13323619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62066705A Expired - Lifetime JPH0740545B2 (en) | 1987-03-20 | 1987-03-20 | Development method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0740545B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08138990A (en) * | 1994-11-02 | 1996-05-31 | Furontetsuku:Kk | Method and apparatus for developing of resist |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52149978A (en) * | 1976-06-09 | 1977-12-13 | Hitachi Ltd | Developing treatment method of photoresist film |
| JPS5596944A (en) * | 1979-01-17 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Developing method |
| JPS57164985A (en) * | 1981-04-03 | 1982-10-09 | Dainippon Screen Mfg Co Ltd | Surface treatment of substrate to be treated |
| JPS57198457A (en) * | 1981-06-01 | 1982-12-06 | Nec Corp | Developing method for photoresist |
| JPS5888749A (en) * | 1981-11-24 | 1983-05-26 | Hitachi Ltd | Developing device |
-
1987
- 1987-03-20 JP JP62066705A patent/JPH0740545B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52149978A (en) * | 1976-06-09 | 1977-12-13 | Hitachi Ltd | Developing treatment method of photoresist film |
| JPS5596944A (en) * | 1979-01-17 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Developing method |
| JPS57164985A (en) * | 1981-04-03 | 1982-10-09 | Dainippon Screen Mfg Co Ltd | Surface treatment of substrate to be treated |
| JPS57198457A (en) * | 1981-06-01 | 1982-12-06 | Nec Corp | Developing method for photoresist |
| JPS5888749A (en) * | 1981-11-24 | 1983-05-26 | Hitachi Ltd | Developing device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08138990A (en) * | 1994-11-02 | 1996-05-31 | Furontetsuku:Kk | Method and apparatus for developing of resist |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0740545B2 (en) | 1995-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5879576A (en) | Method and apparatus for processing substrates | |
| KR970077252A (en) | Developing Method | |
| JP3326656B2 (en) | Rotary semiconductor substrate processing apparatus and rotary semiconductor substrate processing method | |
| JPS63232431A (en) | Development device | |
| TW571168B (en) | Substrate liquid processing device | |
| JP2802636B2 (en) | Coating device and coating method | |
| JP2580082B2 (en) | Substrate rotation processing equipment | |
| JPH02164477A (en) | Base treatment device | |
| JP3971282B2 (en) | Substrate holding mechanism, substrate processing apparatus, and substrate processing method | |
| JP2864366B2 (en) | Method of developing object | |
| JPH01255684A (en) | Equipment for producing semiconductor wafer | |
| JPH04217257A (en) | Resist developing device | |
| JPH0262549A (en) | Spin developer | |
| JPH06151405A (en) | Substrate drying method | |
| JPH03262563A (en) | Coating apparatus | |
| JP2889934B2 (en) | Method of forming resist film | |
| JP2580082C (en) | ||
| JPS6352144A (en) | Resist film developing method | |
| JP2809754B2 (en) | Developing device | |
| JPH05315237A (en) | Manufacture of semiconductor device | |
| JPS62229837A (en) | Method and device for devloping resist | |
| JP3548363B2 (en) | Processing equipment | |
| JPH118192A (en) | Treatment equipment and treatment method | |
| JPH10270318A (en) | Method for cleaning splashproof cup and applying device | |
| JPS60127730A (en) | Manufacturing apparatus of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |