JPS57198457A - Developing method for photoresist - Google Patents
Developing method for photoresistInfo
- Publication number
- JPS57198457A JPS57198457A JP8402481A JP8402481A JPS57198457A JP S57198457 A JPS57198457 A JP S57198457A JP 8402481 A JP8402481 A JP 8402481A JP 8402481 A JP8402481 A JP 8402481A JP S57198457 A JPS57198457 A JP S57198457A
- Authority
- JP
- Japan
- Prior art keywords
- developing solution
- wafer
- developing
- photoresist film
- chack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To form a highly accurate photoresist pattern with high reproducibility by wetting an exposed photoresist film on a semiconductor wafer with a developing solution and then dropping the developing solution on the photoresist film to perform static development. CONSTITUTION:While a pattern-exposed photoresist film is turned to the upper side, a semiconductor wafer 11 is fixed and rested by a vacuum chack 12. After wetting the photoresist film by spraying a developing solution 16 from a developing nozzle 15 fitted to a developing cup 13, the prescribed volume of the developing solution 16 is dropped on the whole surface of the resist film and static development is carried out by using the developing solution kept on the resist film surface by surface tension. While the wafer 11 is being rotated together with the vacuum chack 12 in an arrow direction, a rinsing solution is sprayed from a nozzle 17 to the wafer 11 to rinse it and then nitorgen gas or the like is sprayed to the wafer to dry it.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8402481A JPS57198457A (en) | 1981-06-01 | 1981-06-01 | Developing method for photoresist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8402481A JPS57198457A (en) | 1981-06-01 | 1981-06-01 | Developing method for photoresist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57198457A true JPS57198457A (en) | 1982-12-06 |
Family
ID=13818988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8402481A Pending JPS57198457A (en) | 1981-06-01 | 1981-06-01 | Developing method for photoresist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57198457A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63232431A (en) * | 1987-03-20 | 1988-09-28 | Tokyo Electron Ltd | Development device |
JPH02303116A (en) * | 1989-05-18 | 1990-12-17 | Nec Corp | Spin development method |
WO2000016163A3 (en) * | 1998-09-17 | 2000-09-08 | Silicon Valley Group | Method and apparatus for developing photoresist patterns |
US6689215B2 (en) | 1998-09-17 | 2004-02-10 | Asml Holdings, N.V. | Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface |
JP2010199323A (en) * | 2009-02-25 | 2010-09-09 | Tokyo Electron Ltd | Developing device and developing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5596944A (en) * | 1979-01-17 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Developing method |
JPS5639540A (en) * | 1979-09-07 | 1981-04-15 | Matsushita Electric Ind Co Ltd | Photosensitive resin developing method |
-
1981
- 1981-06-01 JP JP8402481A patent/JPS57198457A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5596944A (en) * | 1979-01-17 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Developing method |
JPS5639540A (en) * | 1979-09-07 | 1981-04-15 | Matsushita Electric Ind Co Ltd | Photosensitive resin developing method |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63232431A (en) * | 1987-03-20 | 1988-09-28 | Tokyo Electron Ltd | Development device |
JPH0740545B2 (en) * | 1987-03-20 | 1995-05-01 | 東京エレクトロン株式会社 | Development method |
JPH02303116A (en) * | 1989-05-18 | 1990-12-17 | Nec Corp | Spin development method |
WO2000016163A3 (en) * | 1998-09-17 | 2000-09-08 | Silicon Valley Group | Method and apparatus for developing photoresist patterns |
US6248171B1 (en) | 1998-09-17 | 2001-06-19 | Silicon Valley Group, Inc. | Yield and line width performance for liquid polymers and other materials |
US6669779B2 (en) | 1998-09-17 | 2003-12-30 | Asml Holding N.V. | Yield and line width performance for liquid polymers and other materials |
US6689215B2 (en) | 1998-09-17 | 2004-02-10 | Asml Holdings, N.V. | Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface |
US7208262B2 (en) | 1998-09-17 | 2007-04-24 | Asml Holdings N.V. | Yield and line width performance for liquid polymers and other materials |
US7255975B2 (en) | 1998-09-17 | 2007-08-14 | Asml Holding N.V. | Yield and line width performance for liquid polymers and other materials |
US7625692B2 (en) | 1998-09-17 | 2009-12-01 | Asml Holding N.V. | Yield and line width performance for liquid polymers and other materials |
JP2010199323A (en) * | 2009-02-25 | 2010-09-09 | Tokyo Electron Ltd | Developing device and developing method |
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