JPS57198457A - Developing method for photoresist - Google Patents

Developing method for photoresist

Info

Publication number
JPS57198457A
JPS57198457A JP8402481A JP8402481A JPS57198457A JP S57198457 A JPS57198457 A JP S57198457A JP 8402481 A JP8402481 A JP 8402481A JP 8402481 A JP8402481 A JP 8402481A JP S57198457 A JPS57198457 A JP S57198457A
Authority
JP
Japan
Prior art keywords
developing solution
wafer
developing
photoresist film
chack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8402481A
Other languages
Japanese (ja)
Inventor
Kenzo Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8402481A priority Critical patent/JPS57198457A/en
Publication of JPS57198457A publication Critical patent/JPS57198457A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a highly accurate photoresist pattern with high reproducibility by wetting an exposed photoresist film on a semiconductor wafer with a developing solution and then dropping the developing solution on the photoresist film to perform static development. CONSTITUTION:While a pattern-exposed photoresist film is turned to the upper side, a semiconductor wafer 11 is fixed and rested by a vacuum chack 12. After wetting the photoresist film by spraying a developing solution 16 from a developing nozzle 15 fitted to a developing cup 13, the prescribed volume of the developing solution 16 is dropped on the whole surface of the resist film and static development is carried out by using the developing solution kept on the resist film surface by surface tension. While the wafer 11 is being rotated together with the vacuum chack 12 in an arrow direction, a rinsing solution is sprayed from a nozzle 17 to the wafer 11 to rinse it and then nitorgen gas or the like is sprayed to the wafer to dry it.
JP8402481A 1981-06-01 1981-06-01 Developing method for photoresist Pending JPS57198457A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8402481A JPS57198457A (en) 1981-06-01 1981-06-01 Developing method for photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8402481A JPS57198457A (en) 1981-06-01 1981-06-01 Developing method for photoresist

Publications (1)

Publication Number Publication Date
JPS57198457A true JPS57198457A (en) 1982-12-06

Family

ID=13818988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8402481A Pending JPS57198457A (en) 1981-06-01 1981-06-01 Developing method for photoresist

Country Status (1)

Country Link
JP (1) JPS57198457A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232431A (en) * 1987-03-20 1988-09-28 Tokyo Electron Ltd Development device
JPH02303116A (en) * 1989-05-18 1990-12-17 Nec Corp Spin development method
WO2000016163A3 (en) * 1998-09-17 2000-09-08 Silicon Valley Group Method and apparatus for developing photoresist patterns
US6689215B2 (en) 1998-09-17 2004-02-10 Asml Holdings, N.V. Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface
JP2010199323A (en) * 2009-02-25 2010-09-09 Tokyo Electron Ltd Developing device and developing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5596944A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Developing method
JPS5639540A (en) * 1979-09-07 1981-04-15 Matsushita Electric Ind Co Ltd Photosensitive resin developing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5596944A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Developing method
JPS5639540A (en) * 1979-09-07 1981-04-15 Matsushita Electric Ind Co Ltd Photosensitive resin developing method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232431A (en) * 1987-03-20 1988-09-28 Tokyo Electron Ltd Development device
JPH0740545B2 (en) * 1987-03-20 1995-05-01 東京エレクトロン株式会社 Development method
JPH02303116A (en) * 1989-05-18 1990-12-17 Nec Corp Spin development method
WO2000016163A3 (en) * 1998-09-17 2000-09-08 Silicon Valley Group Method and apparatus for developing photoresist patterns
US6248171B1 (en) 1998-09-17 2001-06-19 Silicon Valley Group, Inc. Yield and line width performance for liquid polymers and other materials
US6669779B2 (en) 1998-09-17 2003-12-30 Asml Holding N.V. Yield and line width performance for liquid polymers and other materials
US6689215B2 (en) 1998-09-17 2004-02-10 Asml Holdings, N.V. Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface
US7208262B2 (en) 1998-09-17 2007-04-24 Asml Holdings N.V. Yield and line width performance for liquid polymers and other materials
US7255975B2 (en) 1998-09-17 2007-08-14 Asml Holding N.V. Yield and line width performance for liquid polymers and other materials
US7625692B2 (en) 1998-09-17 2009-12-01 Asml Holding N.V. Yield and line width performance for liquid polymers and other materials
JP2010199323A (en) * 2009-02-25 2010-09-09 Tokyo Electron Ltd Developing device and developing method

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