JPS5511311A - Method of photoresist developing - Google Patents
Method of photoresist developingInfo
- Publication number
- JPS5511311A JPS5511311A JP8301878A JP8301878A JPS5511311A JP S5511311 A JPS5511311 A JP S5511311A JP 8301878 A JP8301878 A JP 8301878A JP 8301878 A JP8301878 A JP 8301878A JP S5511311 A JPS5511311 A JP S5511311A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- photoresist
- cleaning
- developing solution
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent a photoresist from remaining on the lower surface of a wafer, by applying a cleaning liquid on the lower surface of a wafer when a developing solution and/or a cleaning liquid is applied to the upper surface of a semiconductor wafer.
CONSTITUTION: Wafer 7 having a photoresist layer whose upper surface has been subjected to partial photosensitization is fixed on stage 8 rotaing at high speed by means of the vacuum evaporation method. Developing solution supplied from developing-solution supply pipe 17 as stage 8 is being rotated is spread over the entire region of wafer 7, and the sensitized part or the unsensitized part of the photoresist is etched by the developing solution. Next, after the supply of the developing solution was stopped, a mixture of developing solution and cleaning liquid is blown onto wafer 7 from mixed-liquid supply pipe 18, and developing of undeveloped parts and cleaning are done. During the course of this process, cleaning liquid is blown onto the lower surface of the wafer from back surface cleaning nozzle 12 placed in the lower part, and photoresist overflowed on the upper and lower surfaces is removed. Further, the supply of the mixed liquid is stopped, and cleaning liquid is blown onto the upper surface from cleaning-liquid supply pipe 19 and photoresist is removed completely.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8301878A JPS5511311A (en) | 1978-07-10 | 1978-07-10 | Method of photoresist developing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8301878A JPS5511311A (en) | 1978-07-10 | 1978-07-10 | Method of photoresist developing |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15289684A Division JPS60121719A (en) | 1984-07-25 | 1984-07-25 | Rotary processor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5511311A true JPS5511311A (en) | 1980-01-26 |
Family
ID=13790494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8301878A Pending JPS5511311A (en) | 1978-07-10 | 1978-07-10 | Method of photoresist developing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5511311A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5727031A (en) * | 1980-07-25 | 1982-02-13 | Nippon Telegr & Teleph Corp <Ntt> | Formation of resist pattern |
| JPS58111318A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Developing method |
| JPS58123731A (en) * | 1982-01-19 | 1983-07-23 | Toshiba Corp | Semiconductor processing device |
| JPS60117731A (en) * | 1983-11-30 | 1985-06-25 | Canon Hanbai Kk | Developing device for wafer |
| JPS6178123A (en) * | 1984-09-26 | 1986-04-21 | Dainippon Screen Mfg Co Ltd | Process and device of processing substrate surface |
| CN103415154A (en) * | 2013-07-24 | 2013-11-27 | 昆山迈致治具科技有限公司 | PCB welding rotating and blowing fixture |
-
1978
- 1978-07-10 JP JP8301878A patent/JPS5511311A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5727031A (en) * | 1980-07-25 | 1982-02-13 | Nippon Telegr & Teleph Corp <Ntt> | Formation of resist pattern |
| JPS6161532B2 (en) * | 1980-07-25 | 1986-12-26 | Nippon Telegraph & Telephone | |
| JPS58111318A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Developing method |
| JPS58123731A (en) * | 1982-01-19 | 1983-07-23 | Toshiba Corp | Semiconductor processing device |
| JPS60117731A (en) * | 1983-11-30 | 1985-06-25 | Canon Hanbai Kk | Developing device for wafer |
| JPS6178123A (en) * | 1984-09-26 | 1986-04-21 | Dainippon Screen Mfg Co Ltd | Process and device of processing substrate surface |
| JPH0144012B2 (en) * | 1984-09-26 | 1989-09-25 | Dainippon Screen Mfg | |
| CN103415154A (en) * | 2013-07-24 | 2013-11-27 | 昆山迈致治具科技有限公司 | PCB welding rotating and blowing fixture |
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