JPS597949A - Developing method - Google Patents
Developing methodInfo
- Publication number
- JPS597949A JPS597949A JP11752482A JP11752482A JPS597949A JP S597949 A JPS597949 A JP S597949A JP 11752482 A JP11752482 A JP 11752482A JP 11752482 A JP11752482 A JP 11752482A JP S597949 A JPS597949 A JP S597949A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- developing
- nozzle
- development
- developer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置の７オトレジストの現像方法にかか
り特に高精度かつ安定なフォトレジストの現像方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoresist development method for semiconductor devices, and particularly relates to a highly accurate and stable photoresist development method.
従来、フォトレジストの現像はウニ・・−を静止又は回
転した状態でノズルから現像液を滴下し、表面張力によ
って現像液をウェハー表面全体にわたって保持し現像を
行っているが、以下に述べる様な欠点が生じている。Conventionally, photoresist development involves dropping a developer from a nozzle while the urchin is stationary or rotating, and the developer is retained over the entire wafer surface by surface tension. There are drawbacks.
即ち、滴下現像のみでは、フォトレジストのぬれ性が、
良くない為現像液がフォトレジストに触れない部分が生
し、部分的に数ミクロンから数十ミクロン程度の現像不
良を生じるという欠点があった。In other words, with drop development alone, the wettability of the photoresist is
This is not good, and there are parts where the developer does not touch the photoresist, resulting in development defects ranging from several microns to several tens of microns.
更に１滴下現像のみでは滴下圧力の影譬を多大に受は圧
力が少々低下しただけでも、ウエノ・−表面全体に現像
液がいきわたらずウェノ・−周辺が一部現像されないと
いう間組も生じている。Furthermore, if only one drop of development is applied, the influence of the dripping pressure will be greatly affected, and even if the pressure decreases even slightly, the developing solution may not be spread over the entire surface of the wafer, and some parts of the periphery of the wafer may not be developed. There is.
一方、従来からスプレー現像方式、又バッチ処理のディ
ップ式埃像があるが、これらはウエノ・−内の現像特性
のばらつきが多く、高精度の微細加工の要求には応じき
れないのが現状である。On the other hand, there have been conventional spray development methods and batch processing dip-type dust images, but these methods have large variations in development characteristics within the Ueno film, and currently cannot meet the demands of high-precision microfabrication. be.
本発明は上述の従来の現像方法の欠点を除去し極めて高
い再現性で、微細加工に適したフォトレジストパターン
精度を得ることの出来るフォトレジスト現像法を提供す
るものである。The present invention provides a photoresist developing method that eliminates the drawbacks of the conventional developing methods described above and can obtain photoresist pattern accuracy suitable for microfabrication with extremely high reproducibility.
本発明においては、ウェハー表面全体を界面活性剤でぬ
らし、次にフォトレジストパターンを現像すべき現像液
をウエノ・−表面全体に滴下し表面張力によシ一定時間
現像液をウエノ・−表面上に保持する事によシ、現像を
行うことを特徴とする。In the present invention, the entire wafer surface is wetted with a surfactant, and then a developer for developing a photoresist pattern is dripped onto the entire wafer surface and the developer is applied for a certain period of time to the wafer surface due to surface tension. It is characterized in that development is carried out by holding the image at a temperature.
また、フォトレジストパターンを現像すべき現像液に界
面活性剤を添加することを特徴とする。Another feature of the method is that a surfactant is added to the developer in which the photoresist pattern is to be developed.
本発明によれは、ウエノ・−表面全体に前もってスプレ
ー状又はシャワー状によりほんの数秒間ウェハー表面全
体を界面活性剤でぬらし次にウエノ・−六回全体に現像
液が表面張力によっていきわたる様にするか、又現像液
に、界面活性剤を添加しその現像液を滴下しウエノ・−
表面全体に表面張力によっていきわたる様にすることに
よって、現像液を単に滴下しウェハー表面で静止現像す
ることによって生ずる上記欠点をなくす効果がある。又
本方法は、従来のどの方法よシも現像液を使用せず、薬
品の低減が図れ、微細加工の７オトレジストパタ一ン精
度がウェハー内つェハー間でばらつきの少ない均一なパ
ターンを得ることができる。According to the present invention, the entire surface of the wafer is pre-wetted with a surfactant for just a few seconds by spraying or showering over the entire surface of the wafer, and then the developer is spread over the entire surface of the wafer by surface tension. Alternatively, add a surfactant to the developer and drop the developer dropwise.
By spreading the developer over the entire surface by surface tension, it is effective to eliminate the above-mentioned drawbacks caused by simply dropping the developer and statically developing it on the wafer surface. In addition, unlike any conventional method, this method does not use a developer, reduces the amount of chemicals, and provides a uniform pattern with less variation in microfabricated photoresist pattern accuracy within a wafer and between wafers. be able to.
次に図面を用いて従来の現像方法と本発明による現像方
法を説明する。Next, a conventional developing method and a developing method according to the present invention will be explained using the drawings.
第１図は従来の現像方法の例として、現像液の滴下のみ
による現像方法を示す図である。第１図において、ウェ
ハー１が真空チャック２に支持され現像カップ５の上面
に設けられた現像ノズル３よりウェハー上に現像液が滴
下されウェハー表面上に現像液が表面張力によっていき
わたる。一定時間抜今度はリンスノズル４から吹き出る
リンス液によりウェハー表面が洗われる。この様な現像
方法ではウェハー表面上のフォトレジストのぬれ性が良
くない為現像不良を生じる。FIG. 1 is a diagram showing, as an example of a conventional developing method, a developing method using only dropping of a developer. In FIG. 1, a wafer 1 is supported by a vacuum chuck 2, a developing solution is dropped onto the wafer from a developing nozzle 3 provided on the upper surface of a developing cup 5, and the developing solution is spread over the wafer surface due to surface tension. After being drained for a certain period of time, the wafer surface is washed by the rinsing liquid spouted from the rinsing nozzle 4. In such a developing method, the wettability of the photoresist on the wafer surface is poor, resulting in poor development.
一方、本発明の現像方法について実施例を説明する。On the other hand, examples of the developing method of the present invention will be described.
実施例１：第２図においてはウェハー６が真空チャック
７に支持され現像カップ１１の上面に設けられたノズル
８より、ウェハー全体にいきわたる様に、非イオン系の
溶剤をＰＰＭのオーダーで水に溶解させた、たとえば住
友３ＳのＦＣ系（フロロカーボン）又は和光紬薬製のＮ
ＣＷ系等を、スプレー状又はシャワー状に吹きつける。Example 1: In FIG. 2, a wafer 6 is supported by a vacuum chuck 7, and a nonionic solvent is poured into water in the order of PPM through a nozzle 8 provided on the upper surface of a developing cup 11 so as to spread it over the entire wafer. Dissolved, for example, Sumitomo 3S FC type (fluorocarbon) or Wako Tsumugi N
Spray CW type etc. in spray or shower form.
これはウェハー表面のぬれ性を良くする為で、０．５秒
から２秒程匿の時間で良い。この時、ウェハー６と真空
チャンク７は回転１７を加える。この回転数は５００Ｒ
ＰＭ前後の回転数で充分である。次に現像ノズル９より
一定量の現像液を滴下する。この滴下量は前記の処理に
より滴下のみの場合より少量で良い１．一定時間現像後
リンスノズル１０よシリンス液が吹き出し、さらに一定
時間ウエノ・−が回転Ｌ−＆がらウニ・・−表面嬢洗わ
れる。次に乾燥の為ウェハーを回転させ窒素ガス又は乾
燥空気を吹きつけながら乾燥する。This is to improve the wettability of the wafer surface, and a period of time of about 0.5 seconds to 2 seconds may be sufficient. At this time, the wafer 6 and the vacuum chunk 7 are subjected to a rotation 17. This rotation speed is 500R
A rotation speed around PM is sufficient. Next, a certain amount of developer is dropped from the developer nozzle 9. Due to the above-mentioned treatment, the amount of this dripping can be smaller than that in the case of just dropping.1. After development for a certain period of time, the rinsing liquid is blown out from the rinse nozzle 10, and for a further certain period of time, the surface of the surface is washed. Next, for drying, the wafer is rotated and dried while blowing nitrogen gas or dry air.
実施例２：第３図においてウェハー１２が真空チャック
１３に支持され現像カップ１６の上面に設けられた現像
ノズル１５よシウェハー上に、ＰＰＭのオーターで前記
の界面活性剤を添加した現像液を一定量滴下する。その
現像液がウェハー表面上にいきわたる１Ｊ一定時間後、
今度はリンスノズル１４から吹き出るリンス液によりウ
ェハー表面が洗われる。）次に乾燥の為ウェハーを回転
させ窒素カス又は乾燥空気を吹きつけながら乾燥する。Embodiment 2: In FIG. 3, a wafer 12 is supported by a vacuum chuck 13, and a developer nozzle 15 provided on the upper surface of a developer cup 16 sprays a constant amount of the above-mentioned surfactant-added developer onto the wafer using a PPM roller. Drip the desired amount. After a certain period of 1 J during which the developer spreads over the wafer surface,
This time, the wafer surface is washed with the rinsing liquid spouted from the rinsing nozzle 14. ) Next, for drying, the wafer is rotated and dried while blowing nitrogen gas or dry air.
次に第４図において、従来の現像方法と本発明による一
夾施例の方法によるウェハー及びレジストパターンの断
面を示す。Next, FIG. 4 shows cross sections of a wafer and a resist pattern obtained by a conventional developing method and a method according to one embodiment of the present invention.
第４図（ａ）は前述第１図の従来技術にががる現像方法
によシ得られたレジストパターンで半導体基板１８の表
面に形成された酸化Ｊｌ！１（２１の上にレジストパタ
ーン１９が形成されている。この場合レジストのぬれ性
が良くない為現像不良を生じ、必要でないレジストパタ
ーン２ｏが残っていることを示す。FIG. 4(a) shows an oxidized Jl! A resist pattern 19 is formed on 1 (21). In this case, the wettability of the resist is poor, resulting in poor development, indicating that an unnecessary resist pattern 2o remains.
一方、第４図（ｂ）は前述の第２図もしくは第３し１に
示す本発明の現像方法にょシ得られたレジストパターン
で上と同じく半導体基板２２０表面に形成された酸化膜
２３の上にレジストパターン２４が形成されている。こ
の図は現像不良がない状態を示している１゜
以上の様に、本発明によれば極めて再現性の良いかつ高
精度の現像を行う事が出来、し７かもウェハー表面に現
像欠陥を含まない高い歩留シの得られる現像を行う事が
可能となる。さらに従来方法より現像液の低減を図る事
が出来る。On the other hand, FIG. 4(b) shows a resist pattern obtained by the developing method of the present invention shown in FIG. A resist pattern 24 is formed thereon. This figure shows a state where there are no development defects of 1° or more. According to the present invention, development can be performed with extremely good reproducibility and high precision. It becomes possible to carry out development with an extremely high yield. Furthermore, the amount of developer can be reduced compared to the conventional method.
第１図は従来のり像方法を示す為の図でおシ、第２図お
よび第３図はそれぞれ本発明の実施例を示す為のしｊで
ある。Ｔｈ ４１ｆｆｉｌ（ａ）は従来の方法によυ得
られたレジストパターンの断面図であシ、第４図（ｂ）
は本発明の一実施例の方法によって得られたレジストパ
ターンの断面図である。
同、図において、１．６．１２・・・・・・ウェハー、
２，７゜１３・・・・・・真空チャック、５．１１．１
６・・曲状像カップ、３、９．１５・・・・・・現像ノ
ズル、４．１０．１４・・・・・・リンスノズル、８・
・・・・・界面活性剤滴下ノズル、１７・・四回転、１
８．２２・・曲ウェハー基板、２１．２３・・四酸化ｍ
、１９．２０．２４・・曲レジストパターンである。
（４）
４
第４ 日FIG. 1 is a diagram showing a conventional image forming method, and FIGS. 2 and 3 are diagrams showing an embodiment of the present invention. Th 41ffil (a) is a cross-sectional view of a resist pattern obtained by the conventional method, and Fig. 4 (b)
1 is a cross-sectional view of a resist pattern obtained by a method according to an embodiment of the present invention. In the same figure, 1.6.12...wafer,
2,7゜13...Vacuum chuck, 5.11.1
6... Curved image cup, 3, 9.15... Development nozzle, 4.10.14... Rinse nozzle, 8.
...surfactant dripping nozzle, 17...four turns, 1
8.22...Curved wafer substrate, 21.23...Tetroxide m
, 19.20.24... is a music registration pattern. (4) 4 4th day
Claims (2)
に持つ半導体ウェノ・−上に、該ウェノ・−を回転した
状態で界面活性剤をウェハー表面全体にスプレー状又は
シャワー状に吹きつけ、次に滴下による現像液を被着さ
せ表面張力１７（よって、ザ１体液をウェハー表面全体
にわたって静止現像によって保持し、一定時間後ウニバ
ーを回転させながら、リンス液でウェハー表面をリンス
処理した後ウェハーを回転させて乾燥させることを特徴
とする現像方法。(1) Spray or shower a surfactant over the entire surface of the wafer while rotating the semiconductor wafer, which has a photoresist group aligned and exposed on the f\ plane; Next, a developing solution is applied by dropping, and the surface tension is 17 (therefore, the body fluid is retained over the entire wafer surface by static development, and after a certain period of time, the wafer surface is rinsed with a rinsing solution while rotating the Univer, and then the wafer is A developing method characterized by rotating and drying.
次面に持つ半導体ウェハー上に界面活性剤を添加した現
像液を滴下し、現像を行うことを特徴とする現像方法１
．(2) Align exposed photoresist h, w
Developing method 1 characterized in that development is carried out by dropping a developer containing a surfactant onto a semiconductor wafer held on the next surface.
．．
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11752482A JPS597949A (en) | 1982-07-06 | 1982-07-06 | Developing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11752482A JPS597949A (en) | 1982-07-06 | 1982-07-06 | Developing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS597949A true JPS597949A (en) | 1984-01-17 |
Family
ID=14713907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11752482A Pending JPS597949A (en) | 1982-07-06 | 1982-07-06 | Developing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS597949A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61139774A (en) * | 1984-12-12 | 1986-06-27 | Tokyo Keiki Co Ltd | Transmission circuit of ultrasonic length measuring machine |
| WO2000016163A3 (en) * | 1998-09-17 | 2000-09-08 | Silicon Valley Group | Method and apparatus for developing photoresist patterns |
| US6277203B1 (en) | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
| US6689215B2 (en) | 1998-09-17 | 2004-02-10 | Asml Holdings, N.V. | Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface |
| US6746826B1 (en) | 2000-07-25 | 2004-06-08 | Asml Holding N.V. | Method for an improved developing process in wafer photolithography |
-
1982
- 1982-07-06 JP JP11752482A patent/JPS597949A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61139774A (en) * | 1984-12-12 | 1986-06-27 | Tokyo Keiki Co Ltd | Transmission circuit of ultrasonic length measuring machine |
| WO2000016163A3 (en) * | 1998-09-17 | 2000-09-08 | Silicon Valley Group | Method and apparatus for developing photoresist patterns |
| US6248171B1 (en) | 1998-09-17 | 2001-06-19 | Silicon Valley Group, Inc. | Yield and line width performance for liquid polymers and other materials |
| US6669779B2 (en) | 1998-09-17 | 2003-12-30 | Asml Holding N.V. | Yield and line width performance for liquid polymers and other materials |
| US6689215B2 (en) | 1998-09-17 | 2004-02-10 | Asml Holdings, N.V. | Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface |
| US7208262B2 (en) | 1998-09-17 | 2007-04-24 | Asml Holdings N.V. | Yield and line width performance for liquid polymers and other materials |
| US7255975B2 (en) | 1998-09-17 | 2007-08-14 | Asml Holding N.V. | Yield and line width performance for liquid polymers and other materials |
| US7625692B2 (en) | 1998-09-17 | 2009-12-01 | Asml Holding N.V. | Yield and line width performance for liquid polymers and other materials |
| US6277203B1 (en) | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
| US6319330B1 (en) | 1998-09-29 | 2001-11-20 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
| US6746826B1 (en) | 2000-07-25 | 2004-06-08 | Asml Holding N.V. | Method for an improved developing process in wafer photolithography |
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