JPH04155915A - Development of processed substrate - Google Patents
Development of processed substrateInfo
- Publication number
- JPH04155915A JPH04155915A JP28164490A JP28164490A JPH04155915A JP H04155915 A JPH04155915 A JP H04155915A JP 28164490 A JP28164490 A JP 28164490A JP 28164490 A JP28164490 A JP 28164490A JP H04155915 A JPH04155915 A JP H04155915A
- Authority
- JP
- Japan
- Prior art keywords
- developing
- substrate
- development
- cup
- developer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 238000011161 development Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 16
- 230000007547 defect Effects 0.000 abstract description 9
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 abstract description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 6
- 239000012487 rinsing solution Substances 0.000 abstract description 6
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 abstract description 2
- 229940043265 methyl isobutyl ketone Drugs 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 7
- 239000007921 spray Substances 0.000 description 6
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 4
- 238000009937 brining Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
被処理基板の現像方法に関し、
現像むらと残渣系欠陥を無くすることを目的とし、
現像液を保持して現像を行う現像機の現像カップを現像
液で洗浄した後、改めて現像液を供給して現像を行うか
、あるいは現像カップ内に残存するリンス液の蒸発する
のを待って現像液を供給し、現像を行うことを特徴とし
て被処理基板の現像方法を構成する。[Detailed Description of the Invention] [Summary] Regarding a method for developing a substrate to be processed, the purpose of the present invention is to eliminate uneven development and residue-based defects by using a developing cup of a developing machine that holds a developer and performs development with a developer. After cleaning, a developing solution is supplied again to perform development, or a developing solution is supplied after the rinsing solution remaining in the developing cup has evaporated, and development is performed. Configure the method.
本発明は半導体デバイスの形成に使用する被処理基板の
現像方法に関する。The present invention relates to a method for developing a substrate to be processed used for forming a semiconductor device.
半導体デバイスの形成には薄膜形成技術、写真蝕刻技術
（フォトリソグラフィ或いは電子線リソグラフィ）、半
導体層形成技術などが使用されている。Thin film formation technology, photolithography (photolithography or electron beam lithography), semiconductor layer formation technology, etc. are used to form semiconductor devices.
こ−で、写真蝕刻技術は被処理基板上にスピンコート法
などによりレジストを薄く被覆してレジスト層を形成し
た後、このレジスト層に紫外線あくいは電子線を選択的
に露光した後、この基板を現像液に浸漬してレジストを
選択エツチングしてレジストパターンが作られる。For this reason, photo-etching technology involves forming a resist layer by coating a substrate thinly with resist using a spin coating method or the like, and then selectively exposing the resist layer to ultraviolet rays or electron beams. A resist pattern is created by immersing the substrate in a developer and selectively etching the resist.
ニーで、レジストには照射部か現像液に不溶となる“ネ
ガタイプ”と照射部が現像液に可溶となる“ポジタイプ
“とがある。There are two types of resist: "negative type" in which the irradiated area is insoluble in the developer, and "positive type" in which the irradiated area is soluble in the developer.
そして、現像が終わった後は被処理基板にリンス液を用
いて洗浄し、レジストパターンの膨潤を防いでいる。After the development is completed, the substrate to be processed is cleaned using a rinsing liquid to prevent the resist pattern from swelling.
こ−で、被処理基板とは、半導体デバイスを形成する半
導体ウェハや、この半導体ウェハに投影露光を行うマス
ク基板やマスク基板を形成するレチクルなどが該当して
いる。Here, the term "substrate to be processed" refers to a semiconductor wafer forming a semiconductor device, a mask substrate for performing projection exposure on the semiconductor wafer, a reticle forming the mask substrate, and the like.
被処理基板の現像は現像機を用いて行われている。 Developing a substrate to be processed is performed using a developing machine.
こ＼で、現像機には各種のタイプがあり、−概には言え
ないか、第１図は発明者か使用している枚葉式デイツプ
現像機の断面図であり、これを用いて現像方法を説明す
る。There are various types of developing machines, and although it is difficult to generalize, Figure 1 is a cross-sectional view of a single-fed dip developing machine used by the inventor. Explain how.
現像機はローアカップ１の中央にスピンチャック２かあ
り、モータにより高速回転すると共に真空吸着機能を備
えており、被処理基板３を真空吸着することかでき、上
下にスライド可能で回転軸と接するローアカップ１の上
端には０リング４か設けられており、スピンチャック２
か降下した場合に気密封止か可能である。The developing machine has a spin chuck 2 in the center of the lower cup 1, which is rotated at high speed by a motor and has a vacuum suction function, so that it can vacuum suck the substrate 3 to be processed, and can slide up and down and is in contact with the rotating shaft. An O ring 4 is provided at the upper end of the lower cup 1, and a spin chuck 2
It is possible to seal hermetically in the event of a fall.
また、ローアカップｌの上には上下にスライド可能なア
ッパーカップ５かスピンチャック２を中央にしてリング
状に設けられており、この中に第２の排水路（以下略し
て第２ドレイン）６と現像、液導入ロアが備えられてい
る。Further, on the lower cup l, an upper cup 5 that can be slid up and down or a ring shape is provided with the spin chuck 2 in the center, and a second drainage channel (hereinafter referred to as a second drain) 6 is provided in the center. It is equipped with a developing and liquid introduction lower.
なお、アッパーカップ５の下面には○リング８かあり、
アッパーカップ５か降下してローアカップ１に接した場
合に気密封止ができ、現像液を溜める現像カップ９か形
成される。In addition, there is a ○ ring 8 on the bottom surface of the upper cup 5.
When the upper cup 5 descends and comes into contact with the lower cup 1, an airtight seal is achieved, and a developing cup 9 for storing the developer is formed.
（以上第１図ＡおよびＢ対応）
次に、現像液を現像カップ９に溜めた後、現像を行い、
その後にこの現像液を除くにはアッパーカップ５を上げ
ればよく、現像液はローアカップ１との間に形成された
第１の排水路（以下略して第１ドレイン）１０を通って
排出される。(The above corresponds to A and B in Figure 1) Next, after storing the developer in the developer cup 9, development is performed.
After that, to remove this developer, it is sufficient to raise the upper cup 5, and the developer is discharged through a first drainage channel (hereinafter referred to as first drain) 10 formed between it and the lower cup 1. .
（以上同図Ｃ対応）
ニーで、現像工程としては、第１図（Ａ）に示すように
被処理基板３をスピンチャック２に吸着固定した後、モ
ータによりスピンチャック２を回転させた状態で、スプ
レーノズル１１よりリンス液１２をスプレーして被処理
基板３を洗浄し、被処理基板３の上に付着している塵埃
を除く。(The above corresponds to C in the same figure) In the developing process, the substrate 3 to be processed is suctioned and fixed to the spin chuck 2 as shown in FIG. , the substrate 3 to be processed is cleaned by spraying a rinse liquid 12 from the spray nozzle 11 to remove dust adhering to the substrate 3 to be processed.
この場合、リンス液１２は遠心力により飛散し、アッパ
ーカップ５に備えられている第２ドレイン６より排出さ
れる。（以上同図Ａ）
次に、スピンチャック２とアッパーカップ５を降下させ
てローアカップｌに接触させた状態でアッパーカップ５
の現像液導入ロアより被処理基板３が浸漬するまで現像
カップ９内に現像液を供給し、これにより現像が行われ
る。（以上同図Ｂ） 次に、所定の時間に亙って浸漬し
て現像か終わった後はアッパーカップ５を上げることに
より、現像液は第１のドレイン１０より排出される。In this case, the rinse liquid 12 is scattered by centrifugal force and is discharged from the second drain 6 provided in the upper cup 5. (The above is A in the same figure) Next, the spin chuck 2 and the upper cup 5 are lowered, and the upper cup 5 is brought into contact with the lower cup l.
A developer is supplied from the developer introduction lower into the developer cup 9 until the substrate 3 to be processed is immersed, thereby performing development. (The above is B in the same figure) Next, after immersion for a predetermined time and development is completed, the upper cup 5 is raised, and the developer is discharged from the first drain 10.
（以上同図Ｃ）
次に、スピンチャック２を上げると共にアッパーカップ
５を下げて元に戻し、スピンチャック２をモータで回転
させると共にスプレーノズル１１よりリンス液１２をス
プレーしてリンスし、その後スピンチャック２の回転数
を上げて被処理基板３を乾燥する。(See Figure C) Next, raise the spin chuck 2 and lower the upper cup 5 to return it to its original position, rotate the spin chuck 2 with a motor, spray the rinse liquid 12 from the spray nozzle 11 to rinse it, and then spin the The rotation speed of the chuck 2 is increased to dry the substrate 3 to be processed.
このような工程で被処理基板３の現像が行われていた。The processing target substrate 3 was developed through such a process.
然し、被処理基板３をスピンチャック２に吸着固定した
後に行うブリリンスおよび現像後に行うリンス工程にお
いて、リンス液１２は完全には排出されておらず、一部
のリンス液は現像カップ９に残存するのが避けられなか
った。However, in the rinsing process performed after the substrate 3 to be processed is suctioned and fixed to the spin chuck 2 and the rinsing process performed after development, the rinsing liquid 12 is not completely discharged, and some of the rinsing liquid remains in the developing cup 9. was unavoidable.
枚葉式のデイツプ現像は現像機を用いて行われており、
ブリリンス→現像→リンス工程をとるか或いは現像→リ
ンス工程をとって行われている。Single-wafer deep development is carried out using a developing machine.
It is carried out by taking the steps of brining → development → rinsing, or by taking the steps of development → rinsing.
然し、現像処理を連続して行うために、先に使用したリ
ンス液の一部が現像カップ内に残存していることが多く
、これか原因で現像ムラを生じていることが問題である
。However, since development processing is performed continuously, a portion of the previously used rinse liquid often remains in the developing cup, which causes uneven development, which is a problem.
上記の課題は被処理基板上にレジストを被覆し、この基
板に紫外線あるいは電子線を選択的に露光した後、この
基板を現像機にセットし、現像液に浸漬して前記レジス
トを選択エツチングした後にリンスし、被処理基板上に
レジストパターンを得る現像方法において、
現像液を保持して現像を行う現像機の現像カップを現像
液で洗浄した後、改めて現像液を供給して現像を行うか
、或いは現像カップ内に残存するリンス液の蒸発するの
を待って現像液を供給し、現像を行うことを特徴として
被処理基板の現像方法を構成することにより解決するこ
とができる。The above problem involved coating a resist on a substrate to be processed, selectively exposing the substrate to ultraviolet rays or electron beams, and then setting the substrate in a developing machine and immersing it in a developer to selectively etch the resist. In a developing method in which a resist pattern is obtained on a substrate to be processed by rinsing it afterwards, is it possible to wash the developing cup of a developing machine that holds a developing solution and performs development with a developing solution, and then supply the developing solution again to perform development? Alternatively, the problem can be solved by configuring a method for developing a substrate to be processed, characterized in that the developing solution is supplied after the rinsing solution remaining in the developing cup evaporates, and development is performed.
枚葉式現像機を用いて連続的に被処理基板の現像を行う
と現像機の現像カップには多少なりとも現像液かリンス
液が残存する。When substrates to be processed are continuously developed using a single-wafer type developing machine, some developer or rinsing solution remains in the developing cup of the developing machine.
こ−で、現像液が残存しており、これに現像液を供給し
て現像する場合は差支えないが、リンス液が残存してお
り、これに現像液を供給して現像する場合にはレジスト
に対する溶解性が被処理基板の面内および面間で異なっ
てくることから、被処理基板に現像ムラを生ずる。In this case, there is no problem if the developing solution is left and the developing solution is supplied to this, but if the rinsing solution is left and the developing solution is supplied to this and the developing is carried out, the resist Since the solubility in the toner differs within and between the surfaces of the substrate to be processed, uneven development occurs on the substrate to be processed.
また、被処理基板間にも現像に有意差が現れて品質が低
下する。Furthermore, significant differences appear in development between substrates to be processed, resulting in a decrease in quality.
そこで、本発明はブリリンスを行った後、或いはブリリ
ンスを行わない場合は現像後のリンスを行った後、現像
カップを現像液で洗い、リンス液を第１ドレインを通し
て排水した後、改めて現像液を供給して現像を行うか、
或いはリンス液が蒸発するのを待って現像液を供給し、
現像を行うものである。Therefore, in the present invention, after performing brining, or after rinsing after development if brining is not performed, the developing cup is washed with developer, the rinsing liquid is drained through the first drain, and then the developer is added again. supply it and develop it, or
Alternatively, wait for the rinsing liquid to evaporate before supplying the developer.
It is used for developing.
このように、リンス液を除いた状態で現像を行えば品質
の良い現像を行うことができる。In this way, if development is performed with the rinse liquid removed, high-quality development can be achieved.
石英製の５インチ角のレチクル乾板を被処理基板とし、
この被処理基板にスパッタ法によりクローム（Ｃｒ）と
酸化クローム（ＣｒｚＯｓ）を７００人および３００人
の厚さに形成した後、電子線用ポジ型レジストであるＥ
ＢＲ−９を約５０００人の厚さにスピンコードした。A 5-inch square reticle dry plate made of quartz is used as the substrate to be processed.
After forming chromium (Cr) and chromium oxide (CrzOs) to a thickness of 700 and 300 mm on this substrate by sputtering, E, which is a positive resist for electron beams, was applied.
BR-9 was spin coded to a thickness of approximately 5000 people.
そして、この被処理基板を電子線露光装置にセットし、
ＬＳＩ用のパターンを選択露光した。Then, set this substrate to be processed in an electron beam exposure device,
A pattern for LSI was selectively exposed.
次に、この被処理基板３を第１図に示す現像機のスピン
チャック２に吸着固定させた。Next, this substrate 3 to be processed was suctioned and fixed to a spin chuck 2 of a developing machine shown in FIG.
先ず、ブリリンス液としてイソプロピルアルコール（略
称ＩＰＡ）を用い、スピンチャック２を２０Ｏｒｐｍで
回転させ乍ら、スプレーノズル１１から７０ＣＣ／分の
割りで１０秒ずつ２回スプレィして塵埃を除いた。（以
上第１図Ａ対応）
次に、アッパーカップ５を上げた状態で、現像液として
メチルイソブチルケトン（略称ＭＩＢＫ）を用い、８箇
所設けであるアッパーカップ５の現像液導入ロアより５
００ｃｃ／分の流速で５秒間供給し、第１のドレイン１
０を通してＩＰＡを除いた。First, using isopropyl alcohol (abbreviated as IPA) as a rinsing liquid, dust was removed by spraying twice from the spray nozzle 11 at a rate of 70 CC/min for 10 seconds each while rotating the spin chuck 2 at 20 rpm. (The above corresponds to FIG. 1 A) Next, with the upper cup 5 raised, use methyl isobutyl ketone (abbreviated as MIBK) as a developer, and 5
00cc/min flow rate for 5 seconds, first drain 1
IPA was excluded through 0.
（以上ブリリンス工程が終了）
次に、スピンチャック２とアッパーカップ５を下げた後
、８箇所設けであるアッパーカップ５の現像液導入ロア
よりＭＩＢＫを３００ ｃｃ供給して現像カップ９を満
たすことにより被処理基板３を浸漬し、１５０秒間に亙
って現像した。（以上同図Ｂ対応）次に、アッパーカッ
プ５を上げて第１のドレイン１０を通してＭＩＢＫを排
出させ、現像を終えた。(This completes the brining process.) Next, after lowering the spin chuck 2 and the upper cup 5, 300 cc of MIBK is supplied from the developer introduction lower of the upper cup 5, which is provided at eight locations, to fill the developer cup 9. The substrate 3 to be processed was immersed and developed for 150 seconds. (The above corresponds to B in the figure) Next, the upper cup 5 was raised and MIBK was discharged through the first drain 10 to complete the development.
（以上同図Ｃ対応）
次に、スピンチャック２を上げ、リンス液としてＩＰＡ
を用い、スピンチャック２を２０Ｏｒｐｍで回転させた
状態で、スプレーノズル１１よりＩＰＡを７０ＣＣ／分
の流量で３０秒間スプレーしてリンスを行った後、回転
数を１２０Ｏｒｐｍに上げ３０秒間保持することにより
乾燥させた。（以上同図Ａ対応）このようにして形成し
たレチクル乾板の特性を従来の方法で現像したものと比
較した。(The above corresponds to C in the same figure) Next, raise the spin chuck 2 and add IPA as a rinsing liquid.
With the spin chuck 2 rotating at 20 Orpm, IPA was sprayed from the spray nozzle 11 at a flow rate of 70 CC/min for 30 seconds for rinsing, and then the rotation speed was increased to 120 Orpm and held for 30 seconds. Dry. (The above corresponds to A in the same figure) The characteristics of the reticle dry plate thus formed were compared with those developed by a conventional method.
すなわち、５インチ角のレチクル基板の中央の１００
ｍｍ角の面積に２μｍのライン・アンド・スペースのテ
ストパターンを１９Ｘ１９個形成したものを５枚づつ作
り、パターン幅の分布、パターン幅の変動および欠陥数
を比較した。In other words, 100 mm in the center of a 5 inch square reticle board.
Five sheets each having 19×19 2 μm line and space test patterns formed on a mm square area were made, and the pattern width distribution, pattern width variation, and number of defects were compared.
第１表
ニーで、３σは各５枚の平均値であって、本発明を適用
して現像カップの現像液洗浄を行った方が０．０３μｍ
改良されている。In Table 1, 3σ is the average value of each 5 sheets, and it is 0.03 μm when the present invention is applied and the developer cup is cleaned with developer.
It has been improved.
また、ＭＡＸ−ＮＩＮはパターン幅について、５枚の平
均値を比較したもので、現像カップの現像液洗浄を行っ
た方が０．０２μｍ改良されている。Furthermore, MAX-NIN is a result of comparing the average value of five sheets with respect to the pattern width, and it is found that the pattern width is improved by 0.02 μm when the developing cup is cleaned with developer.
また、欠陥数はエツチングを行った後に残渣系欠陥とな
るもの＼数で、５枚の平均値を示しており、０．６個は
５枚の基板に３個の欠陥か、また１゜８個は９個の欠陥
かあったことを示している。In addition, the number of defects is the number of residual defects after etching, and shows the average value for 5 substrates, and 0.6 is 3 defects in 5 substrates, or 1°8 This indicates that there were 9 defects.
このように本発明を適用することによりパターン幅の変
動か少なくなり、また欠陥の発生数か減少している。By applying the present invention in this way, variations in pattern width are reduced and the number of defects is reduced.
本発明の実施によりレジストの選択露光を行った被処理
基板を現像する際に、現像ムラと欠陥の発生数を減らす
ことができ、これにより半導体デバイスの形成に当たっ
て品質を向上することかできる。By implementing the present invention, it is possible to reduce development unevenness and the number of defects when developing a substrate to be processed after selectively exposing a resist, thereby improving the quality of semiconductor device formation.
なお、この方法は類似の構造をとるエツチング装置に対
しても適用することができる。Note that this method can also be applied to etching apparatuses having a similar structure.
第１図は現像動作を説明する現像機の断面図、である。
図において、
１はローアカップ、 ２はスピンチャック、３
は被処理基板、 ５はアッパーカップ、６は
第２ドレイン、 ７は現像液導入口、９は現像
カップ、 １０は第１ドレイン、１１はスプ
レーノズル、 １２はリンス液、である。FIG. 1 is a cross-sectional view of the developing machine for explaining the developing operation. In the figure, 1 is the lower cup, 2 is the spin chuck, and 3 is the lower cup.
1 is a substrate to be processed, 5 is an upper cup, 6 is a second drain, 7 is a developer inlet, 9 is a developer cup, 10 is a first drain, 11 is a spray nozzle, and 12 is a rinse liquid.
Claims (1)
るいは密着露光を施して部分的に露光した後、該基板を
現像機にセットし、現像液に浸漬して前記レジストを選
択エッチングした後にリンスし、被処理基板上にレジス
トパターンを得る現像方法において、 現像液を保持して現像を行う現像機の現像カップを現像
液で洗浄した後、改めて現像液を供給して現像を行うか
、或いは現像カップ内に残存するリンス液の蒸発するの
を待って現像液を供給し、現像を行うことを特徴とする
被処理基板の現像方法。[Claims] After a resist is coated on a substrate to be processed and the substrate is partially exposed by projection exposure or contact exposure, the substrate is set in a developing machine and immersed in a developer to process the above-described process. In a developing method in which the resist is selectively etched and then rinsed to obtain a resist pattern on the substrate to be processed, the developer cup of the developing machine that holds the developer and performs development is cleaned with the developer, and then the developer is supplied again. 1. A method for developing a substrate to be processed, characterized in that the development is carried out by using a developing cup, or by waiting for the evaporation of a rinsing liquid remaining in a developing cup and then supplying a developing solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28164490A JPH04155915A (en) | 1990-10-19 | 1990-10-19 | Development of processed substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28164490A JPH04155915A (en) | 1990-10-19 | 1990-10-19 | Development of processed substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04155915A true JPH04155915A (en) | 1992-05-28 |
Family
ID=17641978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28164490A Pending JPH04155915A (en) | 1990-10-19 | 1990-10-19 | Development of processed substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04155915A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6456377B1 (en) | 1997-01-20 | 2002-09-24 | Nikon Corporation | Method for measuring optical feature of exposure apparatus and exposure apparatus having means for measuring optical feature |
| US10818520B2 (en) | 2015-03-18 | 2020-10-27 | SCREEN Holdings Co., Ltd. | Substrate treating apparatus and substrate treating method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63152123A (en) * | 1986-12-17 | 1988-06-24 | Tokyo Electron Ltd | Semiconductor manufacturing device |
| JPH0374837A (en) * | 1989-08-17 | 1991-03-29 | Tokyo Electron Ltd | Development of body to be processed |
-
1990
- 1990-10-19 JP JP28164490A patent/JPH04155915A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63152123A (en) * | 1986-12-17 | 1988-06-24 | Tokyo Electron Ltd | Semiconductor manufacturing device |
| JPH0374837A (en) * | 1989-08-17 | 1991-03-29 | Tokyo Electron Ltd | Development of body to be processed |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6456377B1 (en) | 1997-01-20 | 2002-09-24 | Nikon Corporation | Method for measuring optical feature of exposure apparatus and exposure apparatus having means for measuring optical feature |
| US6825932B2 (en) | 1997-01-20 | 2004-11-30 | Nikon Corporation | Method for measuring optical feature of exposure apparatus and exposure apparatus having means for measuring optical feature |
| US10818520B2 (en) | 2015-03-18 | 2020-10-27 | SCREEN Holdings Co., Ltd. | Substrate treating apparatus and substrate treating method |
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