JPH03215867A - Developing processing method for positive resist - Google Patents

Developing processing method for positive resist

Info

Publication number
JPH03215867A
JPH03215867A JP1112790A JP1112790A JPH03215867A JP H03215867 A JPH03215867 A JP H03215867A JP 1112790 A JP1112790 A JP 1112790A JP 1112790 A JP1112790 A JP 1112790A JP H03215867 A JPH03215867 A JP H03215867A
Authority
JP
Japan
Prior art keywords
substrate
pure water
developing processing
rinse liquid
dust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1112790A
Inventor
Minoru Hirose
Nobuaki Santo
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1112790A priority Critical patent/JPH03215867A/en
Publication of JPH03215867A publication Critical patent/JPH03215867A/en
Application status is Granted legal-status Critical

Links

Abstract

PURPOSE: To eliminate dust attracted by electrostatic charge and to form a clean resist pattern by cleaning a substrate to be processed after it is developed with the aid of immersing it in rinse liquid made by mixing pure water and alcohol.
CONSTITUTION: The substrate to be processed 1 coated with positive resist is set on the rotating stage 2 of a developing processing device after it is selectively exposed by a reduction exposure device and statically developed by alkaline solution (developer). Next, the liquid obtained by mixing the pure water and the isopropyl alcohol is made to flow from a rinse liquid nozzle 5 while rotating the substrate 1. Then, the substrate 1 is spun and dried by accelerating the revolving speed of the stage 2. At this time, the pure water where the isopropyl alcohol of 10% is mixed is used as the rinse liquid. By this developing processing method, the dust on the pattern is eliminated and the dust is hardly attached thereafter. Besides, the fine pattern is formed with high accuracy. As a result, this method is made useful for improving the yield and the quality of a semiconductor device.
COPYRIGHT: (C)1991,JPO&Japio
JP1112790A 1990-01-19 1990-01-19 Developing processing method for positive resist Granted JPH03215867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1112790A JPH03215867A (en) 1990-01-19 1990-01-19 Developing processing method for positive resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1112790A JPH03215867A (en) 1990-01-19 1990-01-19 Developing processing method for positive resist

Publications (1)

Publication Number Publication Date
JPH03215867A true JPH03215867A (en) 1991-09-20

Family

ID=11769355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1112790A Granted JPH03215867A (en) 1990-01-19 1990-01-19 Developing processing method for positive resist

Country Status (1)

Country Link
JP (1) JPH03215867A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163391A (en) * 1992-05-13 1994-06-10 Soltec:Kk Resist pattern formation method
JP2005101487A (en) * 2002-12-10 2005-04-14 Nikon Corp Exposure apparatus, device manufacturing method, and exposure system
CN100382241C (en) * 2002-12-10 2008-04-16 株式会社尼康 Exposure apparatus and method for producing device
US7428907B2 (en) * 2000-09-22 2008-09-30 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
JP2009105473A (en) * 2002-12-10 2009-05-14 Nikon Corp Exposure apparatus, device manufacturing method, and exposure system

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163391A (en) * 1992-05-13 1994-06-10 Soltec:Kk Resist pattern formation method
US7428907B2 (en) * 2000-09-22 2008-09-30 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
JP2005101487A (en) * 2002-12-10 2005-04-14 Nikon Corp Exposure apparatus, device manufacturing method, and exposure system
CN100382241C (en) * 2002-12-10 2008-04-16 株式会社尼康 Exposure apparatus and method for producing device
JP2009105473A (en) * 2002-12-10 2009-05-14 Nikon Corp Exposure apparatus, device manufacturing method, and exposure system
JP4525827B2 (en) * 2002-12-10 2010-08-18 株式会社ニコン Exposure apparatus, device manufacturing method, and exposure system
US8034539B2 (en) 2002-12-10 2011-10-11 Nikon Corporation Exposure apparatus and method for producing device

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