JPS569742A - Developing method of photosensitive resin - Google Patents
Developing method of photosensitive resinInfo
- Publication number
- JPS569742A JPS569742A JP8463679A JP8463679A JPS569742A JP S569742 A JPS569742 A JP S569742A JP 8463679 A JP8463679 A JP 8463679A JP 8463679 A JP8463679 A JP 8463679A JP S569742 A JPS569742 A JP S569742A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ring
- periphery
- solvent
- photosensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a uniformly developed pattern inside a substrate with accuracy by placing a ring at a position near the periphery of the substrate and away from the substrate and dropping a developer into the ring. CONSTITUTION:Semiconductor substrate 12 with mask exposable resin 13 coated on the surface is set on wafer chuck 11, and ring 14 is placed near the periphery of substrate 12 at interval (x). The inside of ring 14 is about equal to the periphery of substrate 12 in size, and interval (x) between substrate 12 and ring 14 is adjusted to such an extent that solvent does not flow out of substrate 12 owing to the surface tension, e.g., about 3-7mm.. A developing solvent is dropped from nozzle 15. Since dropped solvent 16 stays inside ring 14, a developed pattern can be formed uniformly with accuracy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8463679A JPS6053307B2 (en) | 1979-07-04 | 1979-07-04 | How to develop photosensitive resin |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8463679A JPS6053307B2 (en) | 1979-07-04 | 1979-07-04 | How to develop photosensitive resin |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS569742A true JPS569742A (en) | 1981-01-31 |
JPS6053307B2 JPS6053307B2 (en) | 1985-11-25 |
Family
ID=13836166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8463679A Expired JPS6053307B2 (en) | 1979-07-04 | 1979-07-04 | How to develop photosensitive resin |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6053307B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5732445A (en) * | 1980-08-01 | 1982-02-22 | Nec Corp | Developing method for photoresist |
JPS58102934A (en) * | 1981-12-11 | 1983-06-18 | デイスコビジヨン・アソシエイツ | Development of photoresist layer |
JPS5950440A (en) * | 1982-09-16 | 1984-03-23 | Fujitsu Ltd | Developing method of resist film |
JPH0210824A (en) * | 1988-06-29 | 1990-01-16 | Matsushita Electric Ind Co Ltd | Electron-beam resist developing method |
-
1979
- 1979-07-04 JP JP8463679A patent/JPS6053307B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5732445A (en) * | 1980-08-01 | 1982-02-22 | Nec Corp | Developing method for photoresist |
JPS58102934A (en) * | 1981-12-11 | 1983-06-18 | デイスコビジヨン・アソシエイツ | Development of photoresist layer |
JPH0357542B2 (en) * | 1981-12-11 | 1991-09-02 | Discovision Ass | |
JPS5950440A (en) * | 1982-09-16 | 1984-03-23 | Fujitsu Ltd | Developing method of resist film |
JPH0210824A (en) * | 1988-06-29 | 1990-01-16 | Matsushita Electric Ind Co Ltd | Electron-beam resist developing method |
Also Published As
Publication number | Publication date |
---|---|
JPS6053307B2 (en) | 1985-11-25 |
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