JPH06151405A - Substrate drying method - Google Patents

Substrate drying method

Info

Publication number
JPH06151405A
JPH06151405A JP30336992A JP30336992A JPH06151405A JP H06151405 A JPH06151405 A JP H06151405A JP 30336992 A JP30336992 A JP 30336992A JP 30336992 A JP30336992 A JP 30336992A JP H06151405 A JPH06151405 A JP H06151405A
Authority
JP
Japan
Prior art keywords
substrate
gas
drying
central
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30336992A
Other languages
Japanese (ja)
Other versions
JP3136802B2 (en
Inventor
Ryutaro Akutagawa
竜太郎 芥川
Original Assignee
Matsushita Electric Ind Co Ltd
松下電器産業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
Application filed by Matsushita Electric Ind Co Ltd, 松下電器産業株式会社 filed Critical Matsushita Electric Ind Co Ltd
Priority to JP30336992A priority Critical patent/JP3136802B2/en
Publication of JPH06151405A publication Critical patent/JPH06151405A/en
Application granted granted Critical
Publication of JP3136802B2 publication Critical patent/JP3136802B2/en
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17920171&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH06151405(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To provide the title excellent substrate drying method leaving no water drips at all in the central part on the rear surface of a substrate especially useful for a liquid crystal substrate or a semiconductor substrate by a method wherein a gas is satisfactorily blown upon the central part on the rear surface of substrate for avoiding the re-adherence of water drips from a rotary shaft. CONSTITUTION:Within the title substrate drying method, the substrates 6 are rapidly turned while blowing a gas 7 upon the central part on the rear surface of the substrates 6 supported by a substrate supporter part 2 such as an arm, etc., fixed to a rotary shaft 3 and after entirely stopping the turning of the substrates 6 or holding at low speed, the gas discharge is to be stopped for resuming the rapid turning step.

Description

【発明の詳細な説明】Detailed Description of the Invention
【0001】[0001]
【産業上の利用分野】本発明は液晶ディスプレーや半導
体等の洗浄・エッチング工程に於ける基板乾燥方法に関
し、特に枚葉式のスピン乾燥に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate drying method in a cleaning / etching process for liquid crystal displays, semiconductors and the like, and more particularly to a single wafer type spin drying.
【0002】[0002]
【従来の技術】従来のスピン乾燥は図2(A)に示すよ
うに、回転シャフト21に取り付けられた基板支持部2
2に基板23を載せ、前記基板23を回転させることに
より遠心力によって前記基板23の表面に付いた水滴2
6を飛散させ基板の乾燥を行っている。
2. Description of the Related Art In conventional spin drying, as shown in FIG. 2 (A), a substrate support 2 mounted on a rotary shaft 21 is used.
2, the substrate 23 is placed on the substrate 2, and the substrate 23 is rotated to cause water droplets 2 attached to the surface of the substrate 23 by centrifugal force.
6 is scattered to dry the substrate.
【0003】しかしこの時前記基板23の回転中心では
遠心力が働かないため水滴26が残ってしまいをシミや
次工の程装置の腐食の原因となる。
However, at this time, since the centrifugal force does not work at the center of rotation of the substrate 23, water droplets 26 remain and cause stains or corrosion of the apparatus in the next process.
【0004】基板の表面に関しては前記基板23の上部
よりノズル24により窒素等の気体25を吹き付けるこ
とによって前記水滴26は除去可能である。
On the surface of the substrate, the water droplets 26 can be removed by spraying a gas 25 such as nitrogen from above the substrate 23 with a nozzle 24.
【0005】基板の裏面に関してもノズル27より回転
中心部に前記気体25を吹き付ける方法がある。この時
の乾燥方法としては、図2(B)に示すように前記回転
シャフト21を高速で回転させると同時に気体28を吹
き出し、t1秒立った後前記気体28を停止し、その後
2秒まで高速回転させている。
There is also a method of blowing the gas 25 onto the center of rotation from the nozzle 27 on the back surface of the substrate. As a drying method at this time, as shown in FIG. 2 (B), the rotating shaft 21 is rotated at a high speed, and at the same time, the gas 28 is blown out, the gas 28 is stopped after standing for t 1 seconds, and then t 2 seconds. It is rotating at high speed.
【0006】[0006]
【発明が解決しようとする課題】図2(B)に示す様な
シーケンスで乾燥を行っているため、前記気体28の吐
出中、前記基板支持部22が高速で回転しているため前
記気体28を乱し、前記基板中心部は十分に乾燥されな
い。更に前記基板支持部22からの水滴の再付着によっ
ても前記基板23の裏面中央部に水滴が残り十分な乾燥
が行われない。
Since the drying is performed in the sequence as shown in FIG. 2B, the substrate 28 is rotated at a high speed during the discharge of the gas 28, and thus the gas 28 is discharged. And the central part of the substrate is not dried sufficiently. Further, even if the water droplets are reattached from the substrate supporting portion 22, the water droplets remain on the central portion of the back surface of the substrate 23, and sufficient drying is not performed.
【0007】また、前記回転シャフト21内に配管ライ
ン29を設けて前記基板23の裏面中央に気体を吹き付
ける方法も在るが、加工が困難で、図示はしていないが
シール等構成が複雑になるため装置コストが高くなる。
There is also a method in which a piping line 29 is provided in the rotary shaft 21 and gas is blown to the center of the back surface of the substrate 23, but it is difficult to process and a seal or the like has a complicated structure although not shown. Therefore, the device cost becomes high.
【0008】[0008]
【課題を解決するための手段】上記課題を解決するた
め、本発明は回転軸に取り付けられたアーム等の支持部
によって支持された基板の裏面中心部に気体を吹き付け
つつ基板を高速回転させた後、前記基板の回転を停止ま
たは低速で保持した後、前記気体の吐出を停止して再度
高速回転させることを特徴とする基板乾燥方法である。
In order to solve the above problems, the present invention rotates a substrate at a high speed while blowing gas onto the center of the back surface of the substrate supported by a supporting portion such as an arm attached to a rotating shaft. After that, after stopping the rotation of the substrate or holding it at a low speed, the discharge of the gas is stopped and the substrate is rotated at a high speed again.
【0009】[0009]
【作用】上記手段によれば、まず高速回転中に、基板周
辺部の水滴は遠心力によって周囲に飛ばされ、更に中心
部付近の回転シャフトおよび支持部の水滴は裏面中心部
に吹き付けた気体によって吹き飛ばされた後回転によっ
て周囲に飛ばされる。これによって基板の裏面中心部付
近の水滴以外はほぼ除去されている。次に低速回転に落
とすことによって、基板の裏面中心部に吹き付けた気体
は、基板支持部による擾乱が小さくなるため基板の裏面
中心部の水滴部まで十分到達可能になり、中心部に残っ
た水滴を回転中心から移動させる。最後に気体の吹き付
けを停止して高速で回転させることによって裏面に残っ
た水滴は遠心力によって周囲に飛ばされ良好な乾燥基板
が得られる。
According to the above means, during high speed rotation, the water droplets on the peripheral portion of the substrate are splashed to the surroundings by the centrifugal force, and the water droplets on the rotating shaft and the supporting portion near the central portion are generated by the gas blown to the central portion of the back surface. After being blown away, it is blown to the surroundings by rotation. As a result, almost all but the water droplets near the center of the back surface of the substrate are removed. Next, by lowering the rotation speed to low speed, the gas blown to the central part of the back surface of the substrate can reach the water droplet part in the central part of the back surface of the substrate sufficiently because the disturbance by the substrate support part becomes small, and the water droplets remaining in the central part Move from the center of rotation. Finally, by stopping the blowing of the gas and rotating it at a high speed, the water drops remaining on the back surface are blown to the surroundings by the centrifugal force, and a good dry substrate is obtained.
【0010】但し、最後に基板への気体の吹き付けを停
止しない場合シャフト中心部に残った水滴が再度基板裏
面に付着する場合がある
However, if the blowing of the gas to the substrate is not stopped finally, the water droplets remaining in the center of the shaft may adhere to the back surface of the substrate again.
【0011】[0011]
【実施例】以下、本発明の一実施例について詳細に説明
する。図1(A)は、本発明の実施例の概略図である。
乾燥槽1内に設置された基板回転機構は基板支持部2と
それを接続した回転シャフト3よりなり、前記回転シャ
フト3は前記乾燥槽1の外に設置されたサーボモーター
4に接続されている。更に基板6の裏面中央部付近に気
体7を吹き付け可能な位置にノズル5を設置した。前記
ノズル5は気体配管ライン8に接続し電磁バルブ9によ
って気体7の供給制御を行った。
EXAMPLE An example of the present invention will be described in detail below. FIG. 1A is a schematic view of an embodiment of the present invention.
The substrate rotating mechanism installed in the drying tank 1 is composed of a substrate supporting portion 2 and a rotating shaft 3 connected to the substrate supporting portion 2, and the rotating shaft 3 is connected to a servomotor 4 installed outside the drying tank 1. . Further, the nozzle 5 was installed near the center of the back surface of the substrate 6 at a position where the gas 7 could be blown. The nozzle 5 was connected to a gas pipe line 8 and the supply of the gas 7 was controlled by an electromagnetic valve 9.
【0012】この時、電磁バルブ9と前記サーボモータ
ー4はプログラマブルコントローラー10によって図1
(B)に示すような同期運転を行った。図1(B)は本
実施例の乾燥方法のタイムチャートである。乾燥開始か
らt' 1秒までは気体7を吹き付けつつ前記基板6を高速
回転(1800rpm)させ、t' 1からt' 2までは低速
回転(50rpm)で前記気体7を吹き付けた。最後に
' 2からt' 3までは前記気体7の吐出を停止して前記基
板6を高速回転させた。
At this time, the electromagnetic valve 9 and the servo motor 4 are controlled by the programmable controller 10 as shown in FIG.
The synchronous operation as shown in (B) was performed. FIG. 1B is a time chart of the drying method of this embodiment. From the drying start t 'up to one second of the substrate 6 while blowing gas 7 is rotated at high speed (1800 rpm), t' is from 1 t 'up to 2 spraying said gas 7 at low speed (50 rpm). Finally the 'from 2 t' t until 3 is rotated at a high speed of the substrate 6 by stopping the discharge of the gas 7.
【0013】尚、基板回転開始と気体吹き付け開始が一
致しなくても同様の効果が得られるし、気体吹き付け開
始からt' 2まで連続吐出でなく間欠的な吐出であっても
同様な効果が得られる。
[0013] Incidentally, the same effect without starting substrate rotation and the gas blowing start match is obtained, the same effect even intermittent ejection not continuous discharge gas blown from the start t 'up to 2 can get.
【0014】以下いくつかの乾燥実験結果に付いて(表
1)に示す。実験1は本発明の乾燥方法によるもので良
好な乾燥結果がえられた。実験2の場合は最後の高速回
転時に気体7によって前記基板支持部2に残った水滴が
再付着し、前記基板6の裏面中央部に残ったものであ
る。実験3の場合は前記基板6の裏面中央まで十分に気
体7が到達していないため前記基板6の裏面中央部に残
ったものである。実験4の場合は最初の高速回転時に前
記基板支持部2の水滴を除去していないために低速回転
時の気体7の吹き付けによって前記基板支持部2の水滴
が前記基板6の裏面に多量に付着したために残ったもの
である。
The results of some drying experiments are shown below (Table 1). Experiment 1 was based on the drying method of the present invention, and good drying results were obtained. In the case of Experiment 2, the water droplets remaining on the substrate supporting portion 2 were redeposited by the gas 7 at the last high speed rotation, and remained on the central portion of the back surface of the substrate 6. In the case of Experiment 3, the gas 7 did not reach the center of the back surface of the substrate 6 sufficiently, so that the gas 7 remained at the center of the back surface of the substrate 6. In the case of Experiment 4, since the water droplets on the substrate supporting portion 2 were not removed at the first high speed rotation, a large amount of water droplets on the substrate supporting portion 2 adhered to the back surface of the substrate 6 by spraying the gas 7 at the low speed rotation. It remains because I did it.
【0015】[0015]
【表1】 [Table 1]
【0016】[0016]
【発明の効果】以上のように本発明の乾燥方法によっ
て、基板の裏面中央部まで十分に気体を到達させ、かつ
回転シャフトからの水滴の再付着を防止することによっ
て基板裏面中央部に水滴を残さずに良好な基板乾燥が、
簡単な装置構成にて可能となった。
As described above, according to the drying method of the present invention, the gas is made to sufficiently reach the central portion of the back surface of the substrate, and the re-adhesion of water droplets from the rotary shaft is prevented, so that the water droplets are deposited on the central portion of the back surface of the substrate. Good substrate drying without leaving
This is possible with a simple device configuration.
【図面の簡単な説明】[Brief description of drawings]
【図1】(A)は、本発明の乾燥方法を具現化した装置
の構成図 (B)は、同装置の運転時のタイムチャート図
FIG. 1A is a configuration diagram of an apparatus embodying a drying method of the present invention, and FIG. 1B is a time chart diagram of the apparatus during operation.
【図2】(A)は、従来の乾燥装置の構成図 (B)は、同従来装置の運転時のタイムチャート図FIG. 2A is a configuration diagram of a conventional drying device, and FIG. 2B is a time chart diagram during operation of the conventional drying device.
【符号の説明】[Explanation of symbols]
1 乾燥槽 2 基板支持部 3 回転シャフト 4 サーボモーター 5 ノズル 6 基板 7 気体 8 気体配管ライン 9 電磁バルブ 10 プログラマブルコントローラー 1 Drying Tank 2 Substrate Support 3 Rotating Shaft 4 Servo Motor 5 Nozzle 6 Substrate 7 Gas 8 Gas Piping Line 9 Electromagnetic Valve 10 Programmable Controller

Claims (1)

    【特許請求の範囲】[Claims]
  1. 【請求項1】回転軸に取り付けられたアーム等の支持部
    によって支持された基板の裏面中心部に気体を吹き付け
    つつ基板を高速回転させた後、前記基板の回転を停止ま
    たは低速で保持した後、前記気体の吐出を停止して再度
    高速回転させることを特徴とする基板乾燥方法。
    1. After rotating the substrate at a high speed while blowing gas onto the center of the back surface of the substrate supported by a supporting portion such as an arm attached to a rotating shaft, after stopping the rotation of the substrate or holding it at a low speed. A method of drying a substrate, characterized in that the discharge of the gas is stopped and the high speed rotation is performed again.
JP30336992A 1992-11-13 1992-11-13 Substrate drying method Expired - Fee Related JP3136802B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30336992A JP3136802B2 (en) 1992-11-13 1992-11-13 Substrate drying method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30336992A JP3136802B2 (en) 1992-11-13 1992-11-13 Substrate drying method

Publications (2)

Publication Number Publication Date
JPH06151405A true JPH06151405A (en) 1994-05-31
JP3136802B2 JP3136802B2 (en) 2001-02-19

Family

ID=17920171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30336992A Expired - Fee Related JP3136802B2 (en) 1992-11-13 1992-11-13 Substrate drying method

Country Status (1)

Country Link
JP (1) JP3136802B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003022997A (en) * 2001-07-09 2003-01-24 Shibaura Mechatronics Corp Device and method for spin treatment
WO2006082780A1 (en) * 2005-02-07 2006-08-10 Ebara Corporation Substrate processing method, substrate processing apparatus and control program
US8211242B2 (en) 2005-02-07 2012-07-03 Ebara Corporation Substrate processing method, substrate processing apparatus, and control program
CN106391329A (en) * 2016-11-10 2017-02-15 中国农业大学 Centrifugal drier for vegetable seeds

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003022997A (en) * 2001-07-09 2003-01-24 Shibaura Mechatronics Corp Device and method for spin treatment
WO2006082780A1 (en) * 2005-02-07 2006-08-10 Ebara Corporation Substrate processing method, substrate processing apparatus and control program
JPWO2006082780A1 (en) * 2005-02-07 2008-06-26 株式会社荏原製作所 Substrate processing method, substrate processing apparatus, and control program
JP4769790B2 (en) * 2005-02-07 2011-09-07 株式会社荏原製作所 Substrate processing method, substrate processing apparatus, and control program
US8211242B2 (en) 2005-02-07 2012-07-03 Ebara Corporation Substrate processing method, substrate processing apparatus, and control program
CN106391329A (en) * 2016-11-10 2017-02-15 中国农业大学 Centrifugal drier for vegetable seeds

Also Published As

Publication number Publication date
JP3136802B2 (en) 2001-02-19

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