JPH0745514A - Processing equipment - Google Patents

Processing equipment

Info

Publication number
JPH0745514A
JPH0745514A JP20845293A JP20845293A JPH0745514A JP H0745514 A JPH0745514 A JP H0745514A JP 20845293 A JP20845293 A JP 20845293A JP 20845293 A JP20845293 A JP 20845293A JP H0745514 A JPH0745514 A JP H0745514A
Authority
JP
Japan
Prior art keywords
processed
semiconductor wafer
cylindrical body
processing
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20845293A
Other languages
Japanese (ja)
Other versions
JP3290773B2 (en
Inventor
Hidekazu Shirakawa
英一 白川
Shigeki Aoki
茂樹 青木
Norimitsu Morioka
則光 森岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Kyushu Ltd filed Critical Tokyo Electron Ltd
Priority to JP20845293A priority Critical patent/JP3290773B2/en
Publication of JPH0745514A publication Critical patent/JPH0745514A/en
Application granted granted Critical
Publication of JP3290773B2 publication Critical patent/JP3290773B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08Spreading liquid or other fluent material by manipulating the work, e.g. tilting

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent permeation of treating liquid to the rear side of an object to be processed and provide a processing equipment wherein an object to be processed is not damaged when the equipment turns at a high speed. CONSTITUTION:Mechanism which rotates an object to be processed, mechanism which supplies treating liquid to the surface of the object to be processed, a pipe member 25 which is almost concentric with the rotary axis of the object to be processed and has an inner diameter smaller than that of the object to be processed which is arranged on the rear side, and an elevating mechanism 24 which relatively moves up and down between an approaching position and a separating position of the pipe member 25 and the object to be processed are installed. Thereby permeation of the treating liquid to the rear side of the object to be processed is prevented, and the processing wherein the object to be processed is not damaged when the equipment turns at a high speed is enabled.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、処理装置に関する。FIELD OF THE INVENTION The present invention relates to a processing apparatus.

【0002】[0002]

【従来の技術】回転する被処理体の表面に現像液等の処
理液を供給して、表面処理を行う際に被処理体の裏面に
処理液が付着すること、いわゆる裏回りを防ぐために、
被処理体の裏面に洗浄液を吹きあてる手段は、たとえ
ば、特開昭55−11311号公報、特開昭57−14
7478号公報等に記載されている。
2. Description of the Related Art In order to prevent the processing liquid from being attached to the back surface of the object to be processed, that is, the so-called backing, when a processing liquid such as a developing solution is supplied to the surface of a rotating object to be processed,
Means for spraying the cleaning liquid onto the back surface of the object to be processed is described in, for example, JP-A-55-11311 and JP-A-57-14.
It is described in Japanese Patent No. 7478.

【0003】また、被処理体の回転中心とほぼ同心の筒
体の端部を、被処理体の裏面周縁部に微小な隙間をもっ
て対向させ、被処理体の周縁部から裏面側へ回り込む現
像液を上記隙間部に毛管現象により保持して、現像液が
それ以上の内方へ侵入することを制限する技術につい
て、特公平3−34207号公報に記載されている。
Further, the end portion of the cylindrical body, which is substantially concentric with the rotation center of the object to be processed, is opposed to the peripheral portion of the back surface of the object with a minute gap, and the developing solution wraps around from the peripheral edge of the object to the rear surface side. Japanese Patent Publication No. 34207/1990 discloses a technique for holding the developer in the above-mentioned gap by capillarity so as to limit the inward penetration of the developer.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、前者文
献の技術は、処理液の裏回りを防ぐため、ウエハ裏面全
面同時に連続的に洗浄液等を裏面に噴射し続ける必要が
ある。そのため、被処理体の表面に塗布したフォトレジ
ストにパタ−ンを露光し、現像処理をする場合等におい
ては、現像温度を所要値に保持しながら、現像液を被処
理体に連続して供給しなければならないが、被処理体の
下面に連続的に噴射される洗浄液等の温度により、被処
理体の温度が変化し現像液温度が変動して、現像処理ム
ラが発生する改善点を有していた。
However, in the technique of the former document, it is necessary to continuously spray the cleaning liquid or the like on the back surface of the entire wafer at the same time in order to prevent the backing of the processing liquid. Therefore, when the pattern is exposed to the photoresist applied to the surface of the object to be processed and the developing process is performed, the developing solution is continuously supplied to the object to be processed while maintaining the developing temperature at a required value. However, there is an improvement in that the temperature of the object to be processed changes due to the temperature of the cleaning liquid that is continuously sprayed onto the lower surface of the object to be processed, and the temperature of the developer changes, resulting in uneven development processing. Was.

【0005】また、後者の文献の技術では、被処理体の
裏面と筒体の端部とを近ずければ近ずけるほど裏回りを
防止出来るが、処理液を振り切る高速回転時に被処理体
と筒体が擦れる場合が有り、パ−ティクルが発生して被
処理体に付着して被処理体の歩留りを低下させたり、さ
らには被処理体を破損する場合があると言う改善点を有
していた。
Further, in the technique of the latter document, the backing can be prevented as the back surface of the object to be processed and the end portion of the cylinder are brought closer to each other, but the object to be processed is rotated at a high speed to shake off the processing liquid. There is an improvement in that the cylindrical body may be rubbed, particles may be generated and adhere to the object to be processed, the yield of the object to be processed may be reduced, or the object may be damaged. Was.

【0006】本発明の目的は上記問題点を改善するため
になされたもので、被処理体の裏面側への処理液の侵入
を阻止するとともに、高速回転しても被処理体を傷つけ
ることのない処理装置を提供しようとするものである。
The object of the present invention is to solve the above problems and to prevent the processing liquid from entering the back side of the object to be processed and to damage the object to be processed even at high speed rotation. It is intended to provide a non-processing device.

【0007】[0007]

【課題を解決するための手段】第一の発明の処理装置
は、被処理体を回転させて、その表面に処理液を供給す
る処理装置において、前期被処理体の裏面側に設けら
れ、被処理体より小径の筒体と、この筒体と被処理体と
を相対的に移動可能とする昇降機構とを備えたことを特
徴とするものである。
According to a first aspect of the present invention, there is provided a processing device which rotates a substrate to be processed and supplies a processing liquid to the surface thereof, which is provided on the back surface side of the substrate to be processed in the previous period. The present invention is characterized by including a tubular body having a diameter smaller than that of the processing body, and an elevating mechanism capable of relatively moving the tubular body and the processing target body.

【0008】また、第二の発明の処理装置は、前記筒体
の先端部の少なくとも外周側に傾斜面を設けたことを特
徴とするものである。
The processing apparatus of the second invention is characterized in that an inclined surface is provided at least on the outer peripheral side of the tip portion of the cylindrical body.

【0009】また、第三の発明の処理装置は、前記筒体
の先端部はナイフエッジ状に形成されていることを特徴
とするものである。
Further, the processing apparatus of the third invention is characterized in that the distal end portion of the cylindrical body is formed in a knife edge shape.

【0010】また、第四の発明の処理方法は、被処理体
を停止あるいは低速にて回転させる期間は、前記被処理
体の裏面と前記被処理体の裏面側に設けられた被処理体
より小径の筒体の先端部を近接させる工程と、被処理体
を高速にて回転させる期間は、前記被処理体の裏面と前
記筒体の先端部を離間させる工程とからなることを特徴
とするものである。
Further, in the processing method of the fourth aspect of the present invention, during the period in which the object to be processed is stopped or rotated at a low speed, the back surface of the object to be processed and the object to be processed provided on the back surface side of the object to be processed are It is characterized in that the step of bringing the tip end of the small-diameter cylindrical body close to each other and the step of rotating the object to be processed at a high speed include the step of separating the back surface of the object to be processed from the tip end of the tube. It is a thing.

【0011】[0011]

【作用】本発明によれば、低速にて回転している間や、
現像液を液盛りした状態で停止している間は、被処理体
と筒体を接近させれば、筒体の上端縁によって裏回りを
減少する事が出来、また、筒体の上端縁を離間位置へ移
動しているので、高速回転しても被処理体は筒体と接触
せず、傷つけられることがない。
According to the present invention, while rotating at low speed,
While the developer is stopped in the state of being filled with liquid, if the object to be processed and the cylinder are brought close to each other, the backing can be reduced by the upper edge of the cylinder, and the upper edge of the cylinder can be reduced. Since it is moved to the separated position, the object to be processed does not come into contact with the cylindrical body even if it is rotated at a high speed, and is not damaged.

【0012】[0012]

【実施例】以下本発明装置を現像装置に適用した一実施
例につき図面を参照して具体的に説明する。図2に示す
如く、本発明に係わる処理装置が配置される処理装置1
について説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the device of the present invention is applied to a developing device will be specifically described below with reference to the drawings. As shown in FIG. 2, the processing apparatus 1 in which the processing apparatus according to the present invention is arranged.
Will be described.

【0013】この処理装置1は、その一端側に被処理体
として例えば多数枚の半導体ウエハWを収容する複数の
カセット2をたとえば4個載置可能に構成したキャリア
ステ−ション3を有し、このキャリアステ−ション3の
中央部には半導体ウエハWの搬入・搬出及び半導体ウエ
ハWの位置決めをおこなう補助ア−ム4が設けられてい
る。また、前記処理装置1の中央部にてその長さ方向に
移動可能に設けられるとともに、前記補助ア−ム4から
半導体ウエハWを受渡されるメインア−ム5が設けられ
ており、このメインア−ム5の移送路の両側には各種処
理機構が配置されている。具体的には、これらの処理機
構としてはキャリアステ−ション3側の側方には、プロ
セスステ−ションとして例えば半導体ウエハWをブラシ
洗浄するためのブラシスクラバ6及び高圧ジェット水に
より洗浄を施すための高圧ジェット洗浄機7等が並設さ
れるとともに、メインア−ムの移送路の反対側には現像
装置8が2基並設され、その隣には、2基の加熱装置9
が積み重ねて設けられている。
This processing apparatus 1 has a carrier station 3 on one end side thereof, on which, for example, a plurality of cassettes 2 for accommodating, for example, a large number of semiconductor wafers W, can be placed, for example, four cassettes. At the center of the carrier station 3, an auxiliary arm 4 for loading / unloading the semiconductor wafer W and positioning the semiconductor wafer W is provided. Further, a main arm 5 is provided in the central portion of the processing apparatus 1 so as to be movable in the longitudinal direction thereof, and a main arm 5 for receiving the semiconductor wafer W from the auxiliary arm 4 is provided. Various processing mechanisms are arranged on both sides of the transfer path of the chamber 5. Specifically, as a processing mechanism, a cleaning process is performed on the side of the carrier station 3 by a brush scrubber 6 for brush cleaning the semiconductor wafer W and high-pressure jet water as a process station. High-pressure jet washer 7 and the like are provided in parallel, two developing devices 8 are provided in parallel on the opposite side of the main arm transfer path, and two heating devices 9 are provided next to them.
Are provided in a stack.

【0014】さらに、前記処理機構の側方には、接続用
ユニット10を介して、半導体ウエハWにフォトレジス
トを塗布する前にこれを疎水化処理するアドヒ−ジョン
処理装置11が設けられ、この下方にはク−リング装置
12が配置されている。これらの装置11、12の側部
には加熱装置9が2列で2個ずつ積み重ねるように配置
されている。また、前記メインア−ム5の移送路を挟ん
でこれら加熱装置9やアドヒ−ジョン処理装置11等の
反対側には半導体ウエハWにフォトレジスト液を塗布す
るレジスト塗布装置13が2台並設されている。尚、図
示されていないがこれらレジスト塗布装置13の側部に
は、レジスト膜に所定の微細パタ−ンを露光するための
露光装置等が設けられている。
Further, on the side of the processing mechanism, there is provided an adhesion processing device 11 for hydrophobizing the photoresist before applying it to the semiconductor wafer W via the connection unit 10. A cooling device 12 is arranged below. On the sides of these devices 11 and 12, heating devices 9 are arranged so that two heating devices 9 are stacked in two rows. Two resist coating devices 13 for coating the photoresist liquid on the semiconductor wafer W are provided in parallel on the opposite side of the heating device 9 and the adhesion processing device 11 with the transfer path of the main arm 5 interposed therebetween. ing. Although not shown, an exposure device and the like for exposing a predetermined fine pattern on the resist film are provided on the side of the resist coating device 13.

【0015】このように構成された処理装置1に組み込
まれる本発明の現像装置8は、図1に示すようにその中
心部には駆動モ−タ16により回転可能に且つ、昇降機
構17により上下動可能になされた半導体ウエハW保持
手段としてのスピンチャック18が設けられており、こ
の上面に、真空吸着等により半導体ウエハWを吸着保持
することが出来るように構成されている。
As shown in FIG. 1, the developing device 8 of the present invention incorporated in the processing device 1 constructed as described above is rotatable in its central portion by a drive motor 16 and is vertically moved by an elevating mechanism 17. A spin chuck 18 as a movable semiconductor wafer W holding means is provided, and the semiconductor wafer W can be sucked and held on the upper surface by vacuum suction or the like.

【0016】このスピンチャック18の周辺部には、こ
れを囲んで現像液や洗浄水などのリンス液の飛散を防止
するための樹脂または金属製のカップ機構20が設けら
れている。このカップ機構20は、その底部が傾斜され
て周縁部が上方へ起立された有底円筒状の外カップ21
と、この外カップ21の底部により支持されて上記スピ
ンチャック18に保持される半導体ウエハWの下部周縁
部よりその外側へ下向き傾斜して設けられるド−ナツ形
状の内カップ22と、この内カップ22と上記半導体ウ
エハWの間には、前記スピンチャック18の回転軸とほ
ぼ同心の筒体25が設けられており、この筒体25は上
下動たとえば半導体ウエハWの裏面と筒体25の上部先
端部分との間隔が1mmの近接位置と半導体ウエハWと
十分離れたたとえば20mmの離間位置との間を昇降機
構24により上下動(近接、離間)可能に構成されてい
る。また、前記半導体ウエハWの裏面周縁部と対向する
前記筒体25の先端部26は、図3に示すように、少な
くとも外側に傾斜面27が設けられ、その先端部26の
上端縁28はナイフエッジ状に形成されている。また、
上記筒体25の直径方向の大きさは、先端部26の直径
が、前記半導体ウエハWの直径よりも10mm程度内側
つまり半導体ウエハの例えばオリエンテ−ションフラッ
トよりも内側になるような直径とされており、また、上
記筒体25は、厚さが1から2mm程度で、材料たとえ
ばナイロンあるいはセラミックス等のような耐水性、耐
食性及び吸水性を有する部材にて形成されている。
A peripheral or peripheral portion of the spin chuck 18 is provided with a cup mechanism 20 made of resin or metal for surrounding the spin chuck 18 to prevent the rinse liquid such as a developing liquid or cleaning water from scattering. This cup mechanism 20 has a bottomed cylindrical outer cup 21 with its bottom portion inclined and its peripheral portion standing upright.
A doughnut-shaped inner cup 22 that is inclined downward from the lower peripheral edge of the semiconductor wafer W supported by the bottom of the outer cup 21 and held by the spin chuck 18, and the inner cup. A cylindrical body 25 which is substantially concentric with the rotation axis of the spin chuck 18 is provided between the semiconductor wafer W and the semiconductor wafer W. The cylindrical body 25 moves vertically, for example, the rear surface of the semiconductor wafer W and the upper part of the cylindrical body 25. The elevation mechanism 24 is configured to be vertically movable (approximated or separated) between a proximity position having a distance of 1 mm from the tip portion and a separation position having a sufficient distance from the semiconductor wafer W, for example, 20 mm. Further, as shown in FIG. 3, a tip end portion 26 of the cylindrical body 25 facing the back surface peripheral edge portion of the semiconductor wafer W is provided with an inclined surface 27 at least on the outer side, and an upper end edge 28 of the tip end portion 26 has a knife. It is formed like an edge. Also,
The size of the cylindrical body 25 in the diametrical direction is such that the diameter of the tip portion 26 is about 10 mm inside the diameter of the semiconductor wafer W, that is, inside the orientation flat of the semiconductor wafer, for example. The cylindrical body 25 has a thickness of about 1 to 2 mm and is made of a material having water resistance, corrosion resistance and water absorption, such as a material such as nylon or ceramics.

【0017】また、外カップ21の底部には図示しない
排気ポンプに接続された排気口31が設けられていると
ともに、図示しない吸引ポンプに接続された排液口32
が設けられている。なお、筒体25の内側には半導体ウ
エハWの裏面周縁部に向かって洗浄用のリンス液を噴射
するための複数のリンス液噴射ノズル33が設けられて
いる。このリンス液噴射ノズル33の噴射方向は、上記
半導体ウエハWの裏面の外周側にリンス液が供給される
ように構成されている。
An exhaust port 31 connected to an exhaust pump (not shown) is provided at the bottom of the outer cup 21, and a drain port 32 connected to a suction pump (not shown).
Is provided. A plurality of rinse liquid jet nozzles 33 for jetting the rinse liquid for cleaning toward the peripheral portion of the back surface of the semiconductor wafer W are provided inside the cylindrical body 25. The spray direction of the rinse liquid spray nozzle 33 is configured such that the rinse liquid is supplied to the outer peripheral side of the back surface of the semiconductor wafer W.

【0018】また、前記スピンチャック18の上方に
は、処理液供給機構35から処理液供給配管36を介し
て、処理液Lを半導体ウエハWの表面に供給する処理液
供給ノズル37が設けられている。また、前記スピンチ
ャック18の上方には、図示しないリンス液供給ノズル
が設けられており、現像処理が終了した半導体ウエハW
の表面にリンス液を供給することができるように構成さ
れている。
A processing liquid supply nozzle 37 for supplying the processing liquid L to the surface of the semiconductor wafer W from the processing liquid supply mechanism 35 via a processing liquid supply pipe 36 is provided above the spin chuck 18. There is. Further, a rinse liquid supply nozzle (not shown) is provided above the spin chuck 18, and the semiconductor wafer W on which the developing process has been completed is completed.
The rinse liquid can be supplied to the surface of the.

【0019】また、前記駆動モ−タ16、前記昇降機構
17、前記昇降機構24、前記処理液供給機構35およ
び前記リンス液供給ノズルはそれぞれの回転数、昇降位
置、処理液供給量およびリンス液供給量を制御するため
の制御部38に接続されており、相対的な制御が可能な
構成となっている。
Further, the drive motor 16, the elevating mechanism 17, the elevating mechanism 24, the processing liquid supply mechanism 35 and the rinse liquid supply nozzle respectively have respective rotational speeds, vertical positions, processing liquid supply amounts and rinse liquids. It is connected to a control unit 38 for controlling the supply amount and has a configuration capable of relative control.

【0020】次に上記実施例の作用について説明する。
まず、筒体25と半導体ウエハWはたとえば20mmの
離間位置に配置されている。メインアーム5によって半
導体ウエハWをスピンチャック18に自動的に搬送位置
決め保持した後、半導体ウエハWを例えば2000rp
mにて高速回転させながら、半導体ウエハWの上面(表
面)に処理液供給ノズルからスプレ−状に現像液をたと
えば0.5秒間供給し、半導体ウエハWのプリウェット
処理を行う。この後、徐々に回転数を低下させて行くと
同時に、昇降機構24により筒体25を上方向すなわち
半導体ウエハWの裏面に向かって移動させ間隔が1mm
の近接位置に配置して、例えば30rpmの低速回転と
なった状態で、処理液供給ノズルからスプレ−状の現像
液をたとえば2秒間供給して表面張力により液盛りし半
導体ウエハWに現像液膜を形成した後、回転を停止して
たとえば50秒間現像処理を行う。また、この処理雰囲
気の温度、湿度は、予め定めた設定値に自動制御されて
いる。
Next, the operation of the above embodiment will be described.
First, the cylindrical body 25 and the semiconductor wafer W are arranged at a separated position of, for example, 20 mm. After the semiconductor wafer W is automatically transferred, positioned and held by the main arm 5 to the spin chuck 18, the semiconductor wafer W is, for example, 2000 rp.
While rotating at a high speed at m, the developing solution is supplied to the upper surface (front surface) of the semiconductor wafer W from the processing solution supply nozzle in a spray form for, for example, 0.5 seconds to perform the pre-wet processing of the semiconductor wafer W. After that, the number of rotations is gradually reduced, and at the same time, the elevating mechanism 24 moves the cylindrical body 25 upward, that is, toward the back surface of the semiconductor wafer W so that the interval is 1 mm.
In the state of being rotated at a low speed of, for example, 30 rpm, a spray-like developing solution is supplied for 2 seconds from the processing solution supply nozzle, and liquid is piled up by surface tension to form a developing solution film on the semiconductor wafer W. After the formation, the rotation is stopped and the development processing is performed for 50 seconds, for example. Further, the temperature and humidity of this processing atmosphere are automatically controlled to predetermined set values.

【0021】このとき、図3に示すように、半導体ウエ
ハWと筒体25との間に、半導体ウエハWの周縁から裏
回りにより、現像液Lが半導体ウエハWの裏面に回り込
んでくるが、半導体ウエハWの下面(裏面)と筒体25
の上端縁28との隙間が1mm程度と狭いために、筒体
25の内側へは現像液Lが侵入することを制限できると
ともに、筒体25の先端部26は、外周側に傾斜面27
を設けてナイフエッジ状に形成されているので、回り込
んだ現像液Lが、半導体ウエハWと筒体25の上端縁2
8との隙間に留まる量が少なく、ほとんどの現像液Lは
外周側の傾斜面を流れ落ちる。すなわち、現像液Lの裏
回りを筒体25の上端縁28との対向位置を限度として
制限することが出来る。
At this time, as shown in FIG. 3, the developing solution L wraps around the back surface of the semiconductor wafer W between the semiconductor wafer W and the cylindrical body 25 due to the backing from the peripheral edge of the semiconductor wafer W. , The lower surface (back surface) of the semiconductor wafer W and the cylindrical body 25
Since the gap between the upper edge 28 and the upper edge 28 is as narrow as about 1 mm, the developer L can be prevented from entering the inside of the cylindrical body 25, and the tip end portion 26 of the cylindrical body 25 has an inclined surface 27 on the outer peripheral side.
Is provided in the shape of a knife edge, the developing solution L that has spilled over the semiconductor wafer W and the upper edge 2 of the cylindrical body 25
The amount of the developer L that remains in the gap with 8 is small, and most of the developer L flows down the inclined surface on the outer peripheral side. That is, the backside of the developing solution L can be limited up to the position facing the upper edge 28 of the cylindrical body 25.

【0022】この後、半導体ウエハWの回転数を少しず
つ上げて現像液の振り切りを行うと同時(ほぼ同時また
は多少遅くても良い)に、昇降機構24により筒体25
を下方に移動させ離間位置に配置する。半導体ウエハW
と筒体25の上端縁28との対向位置までは、現像液L
の裏回りが生じるが、この後、半導体ウエハWを100
0rpmの回転にした状態で、図示しないリンス液供給
ノズルから半導体ウエハWの表面にリンス液を供給する
と同時に、リンス液噴射ノズル33から半導体ウエハW
の裏面に向かって、洗浄液をたとえば10秒間噴射する
ことによって、現像液を洗い流す。この後、徐々に回転
数を上げて行き、4000rpmの回転で、たとえば1
0秒間振り切り乾燥を行う。
After that, the rotation speed of the semiconductor wafer W is increased little by little and the developing solution is shaken off (at the same time (or at almost the same time or slightly later)), the elevating mechanism 24 causes the cylindrical body 25 to move.
Is moved downward and is placed at the separated position. Semiconductor wafer W
Up to the position where the upper end edge 28 of the cylindrical body 25 faces the developer L
However, after this, the semiconductor wafer W is
In the state of 0 rpm rotation, the rinse liquid is supplied to the surface of the semiconductor wafer W from a rinse liquid supply nozzle (not shown), and at the same time, the rinse liquid jet nozzle 33 supplies the semiconductor wafer W.
The developing solution is washed away by spraying the cleaning solution, for example, for 10 seconds on the back surface of the developing solution. After this, the number of revolutions is gradually increased, and at a revolution of 4000 rpm, for example, 1
Shake off for 0 seconds to dry.

【0023】半導体ウエハWを低速回転している間や、
現像液を液盛りした状態で停止している間は、半導体ウ
エハWに筒体25を接近させているので、裏回りを防ぐ
ことが出来、高速回転している時は高速回転による遠心
力の作用により裏回りは起こらず、また、筒体25の上
端縁28を約20mm離れた離間位置へ移動しているの
で、高速回転により半導体ウエハWが上下方向に面振れ
したとしても、半導体ウエハWの裏面と筒体25の上端
縁28は接触することがなく、安全性を確保することが
出来る。また、半導体ウエハWの裏面にリンス液を供給
する際は、既に現像処理を終了しているため、洗浄液の
温度が変化しても、現像ムラを生じることはない。
While the semiconductor wafer W is rotating at a low speed,
Since the cylindrical body 25 is brought close to the semiconductor wafer W while the developing solution is stopped in a state of being filled with the developing solution, it is possible to prevent backing and to prevent centrifugal force generated by high-speed rotation during high-speed rotation. Since the backing does not occur due to the action and the upper edge 28 of the cylindrical body 25 is moved to the separated position about 20 mm apart, even if the semiconductor wafer W shakes vertically due to the high speed rotation, the semiconductor wafer W does not move. The back surface of the cylinder 25 and the upper edge 28 of the cylindrical body 25 do not come into contact with each other, so that safety can be ensured. Further, when the rinse liquid is supplied to the back surface of the semiconductor wafer W, the developing process has already been completed, so that even if the temperature of the cleaning liquid changes, uneven development does not occur.

【0024】また、筒体25の先端部26と半導体ウエ
ハWの裏面との距離が接近した状態においては、回り込
んで来た現像液は筒体25の先端部26に触れた瞬間に
筒体25の壁面を伝わって下に落ち、この流路の流体抵
抗が他の経路(チャック方向への回り込み経路)よりも
小さいため、この経路が安定する。したがって、筒体2
5の内側に流れ込むことがない。尚、筒体25の形状を
ナイフエッジ状にした場合には、半導体ウエハWの裏面
に付着する現像液の残留量が少なく、処理終了後にあら
ためて裏面を洗浄する時に、洗浄液の分量も少なくてす
むとともに、洗浄時間も少なくてすむという効果があ
る。
Further, in a state where the tip portion 26 of the tubular body 25 and the back surface of the semiconductor wafer W are close to each other, the developing solution that has come around circulates at the moment when the tip portion 26 of the tubular body 25 is touched. Since the fluid resistance of this flow path is smaller than that of the other path (the wraparound path in the chuck direction) along the wall surface of 25, the flow path is stable. Therefore, the cylindrical body 2
It does not flow into the inside of 5. When the cylindrical body 25 has a knife-edge shape, the residual amount of the developing solution attached to the back surface of the semiconductor wafer W is small, and the amount of the cleaning solution is small when the back surface is newly cleaned after the processing is completed. At the same time, there is an effect that the cleaning time is short.

【0025】なお、筒体としては、上述実施例の筒体2
5に限定されるものではなく、たとえば、円錐形の筒体
でもよい。要するに、半導体ウエハWの回転中心とほぼ
同心で、半導体ウエハW裏面の周辺部との間に、微小な
隙間を形成できるような端部を備える筒体であればよ
い。
As the tubular body, the tubular body 2 of the above-mentioned embodiment is used.
The number is not limited to 5, and may be, for example, a conical tubular body. In short, a cylindrical body having an end portion that is substantially concentric with the center of rotation of the semiconductor wafer W and that can form a minute gap with the peripheral portion of the back surface of the semiconductor wafer W may be used.

【0026】次に、その他の実施例について述べるが、
第一の実施例と同一部分には同符号を付し、説明は省略
する。第二の実施例においては、図4に示す如く、筒体
25の先端部26の形状は、内側と外側両方に傾斜面が
形成されている。第一の実施例では、外周側に傾斜面を
設けたものを使用したが、これに限られるものではない
ことは言うまでもないことである。
Next, other embodiments will be described.
The same parts as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted. In the second embodiment, as shown in FIG. 4, the tip end portion 26 of the tubular body 25 has inclined surfaces formed on both the inside and the outside. In the first embodiment, the one having the inclined surface on the outer peripheral side is used, but it goes without saying that the invention is not limited to this.

【0027】また、第三の実施例においては、図5に示
す如く、前記筒体25の先端部26は、少なくとも外側
が低くなるように段差部40を周設されており、この段
差部40で被処理体の裏面周縁部側に回り込む現像液の
液溜め部を構成してもよい。段差部40を設けたことに
より、液膜が段差部40に沿って横方向に広がりやすく
液膜が途切れ途切れになることを防止する事が出来ると
言う効果がある。
Further, in the third embodiment, as shown in FIG. 5, the tip end portion 26 of the cylindrical body 25 is provided with a step portion 40 so that at least the outside thereof is lowered, and the step portion 40 is provided. It is also possible to form a liquid reservoir for the developing solution that wraps around the peripheral portion of the back surface of the object. By providing the step portion 40, it is possible to prevent the liquid film from spreading easily in the lateral direction along the step portion 40 and preventing the liquid film from being interrupted.

【0028】また、第四の実施例においては、図6に示
す如く、前記筒体25の先端部26に例えば溝状の液溜
め部42を周回するごとく設け、この液溜め部42と連
通する液体供給管41を介して図示しない液体供給源か
ら洗浄液あるいは純水を供給し、半導体ウエハWを低速
にて回転している間や、現像液を液盛りした状態で停止
している期間は、筒体25の先端部26が半導体ウエハ
Wの裏面の予め定められた位置に有るように自動的に設
定し、半導体ウエハWの裏面側に回り込む現像液と洗浄
液を毛管現象によって保持して周方向に連続する液膜を
形成することができるように構成されている。第四の実
施例にあっては、筒体の被処理体と対抗する面に形成さ
れた液溜め部の周方向に、洗浄液あるいは純水によって
連続する液膜を形成することが出来るので、この洗浄液
の液膜によって被処理体の裏面側に回り込む現像液を強
制的に保持誘引して、それ以上内側への侵入を防止出来
ると言う効果がある。
Further, in the fourth embodiment, as shown in FIG. 6, for example, a groove-shaped liquid reservoir 42 is provided at the distal end portion 26 of the cylindrical body 25 so as to circulate, and communicates with the liquid reservoir 42. A cleaning liquid or pure water is supplied from a liquid supply source (not shown) through the liquid supply pipe 41, while the semiconductor wafer W is rotating at a low speed, or during a period in which the developing liquid is stopped in a liquid-filled state, The tip portion 26 of the cylindrical body 25 is automatically set so as to be at a predetermined position on the back surface of the semiconductor wafer W, and the developing solution and the cleaning solution, which wrap around to the back surface side of the semiconductor wafer W, are held by a capillary phenomenon and are circumferentially moved. It is configured so that a continuous liquid film can be formed. In the fourth embodiment, since a continuous liquid film can be formed by the cleaning liquid or pure water in the circumferential direction of the liquid reservoir formed on the surface of the cylindrical body facing the object to be processed, There is an effect that the liquid film of the cleaning liquid forcibly holds and attracts the developing liquid that wraps around to the back surface side of the object to be processed and prevents the liquid from further intruding.

【0029】また、前記駆動モ−タ16、前記昇降機構
17、前記昇降機構24、前記処理液供給機構35およ
び前記リンス供給ノズルは制御部38に接続されている
ので、それぞれの回転数、昇降位置および処理液供給量
を適宜プロセスに合わせて同時に、もしくは別々に制御
することができるので、自動的に精度の高い処理を行う
ことが出来る。
Further, since the drive motor 16, the elevating mechanism 17, the elevating mechanism 24, the processing liquid supply mechanism 35 and the rinse supply nozzle are connected to the control unit 38, their respective rotational speeds and elevating and lowering are performed. Since the position and the supply amount of the processing liquid can be controlled simultaneously or separately according to the process as appropriate, it is possible to automatically perform highly accurate processing.

【0030】上記実施例では、現像液を供給する工程に
ついて説明したが、レジスト液の塗布でも、その他処理
液の塗布であればいずれにも適用できる。さらにまた、
半導体ウエハのレジスト液、現像液の塗布について説明
したが処理液の回転塗布であれば、プリント基板、LC
D基板などへの処理液の回転塗布工程に適用してもよ
い。この場合上記筒体は被処理体の形状に応じて、被処
理体と近接部の形状を被処理体形状と略同一形状にした
管状(筒状)部材を設け、被処理体が回転停止状態のと
き、被処理体と略同一形状の管状部材を被処理体下面に
近接させて裏回りを防止し、被処理体を高速回転させる
場合は、管状部材を被処理体から離間させればよい。
In the above-mentioned embodiment, the step of supplying the developing solution has been described, but it can be applied to any application of the resist solution or any other processing solution. Furthermore,
The application of the resist solution and the developing solution to the semiconductor wafer has been described.
It may be applied to the spin coating process of the treatment liquid on the D substrate or the like. In this case, the tubular body is provided with a tubular (cylindrical) member in which the shape of the processing object and the proximity portion are substantially the same as the shape of the processing object according to the shape of the processing object, and the processing object is in a rotation stopped state. At this time, when a tubular member having substantially the same shape as the object to be processed is brought close to the lower surface of the object to be processed to prevent backing and the object is rotated at high speed, the tubular member may be separated from the object to be processed. .

【0031】[0031]

【発明の効果】以上のように第一の発明によれば、高速
回転時の安全性を保つことが出来るとともに、処理液の
被処理体の裏面への裏回りを防ぐことが出来る。また、
第二の発明および第三の発明によれば、処理後の裏面洗
浄における洗浄液の量と洗浄時間をすくなくできる。ま
た、第四の発明によれば、高速回転時の安全性を保こと
が出来るとともに、処理液の裏回りを防ぐことが出来
る。
As described above, according to the first aspect of the present invention, it is possible to maintain the safety at the time of high speed rotation and prevent the treatment liquid from sneaking around the back surface of the object to be treated. Also,
According to the second invention and the third invention, it is possible to reduce the amount of the cleaning liquid and the cleaning time in the back surface cleaning after the treatment. Further, according to the fourth aspect of the present invention, the safety at the time of high speed rotation can be maintained and the backing of the processing liquid can be prevented.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第一の実施例の処理装置の概略断面図
である。
FIG. 1 is a schematic sectional view of a processing apparatus according to a first embodiment of the present invention.

【図2】本発明の実施例の処理装置の使用状態を示す斜
視図である。
FIG. 2 is a perspective view showing a usage state of the processing apparatus according to the embodiment of the present invention.

【図3】図1の要部断面図である。FIG. 3 is a cross-sectional view of the main parts of FIG.

【図4】本発明の第二の実施例の要部断面図である。FIG. 4 is a cross-sectional view of essential parts of a second embodiment of the present invention.

【図5】本発明の第三の実施例の要部断面図である。FIG. 5 is a cross-sectional view of essential parts of a third embodiment of the present invention.

【図6】本発明の第四の実施例の要部断面図である。FIG. 6 is a cross-sectional view of essential parts of a fourth embodiment of the present invention.

【符号の説明】[Explanation of symbols]

W 半導体ウエハ 16 駆動モ−タ 37 処理液供給ノズル 25 筒体 24 昇降機構 27 傾斜面 28 先端部 W Semiconductor Wafer 16 Driving Motor 37 Processing Liquid Supply Nozzle 25 Cylindrical Body 24 Lifting Mechanism 27 Sloping Surface 28 Tip Part

フロントページの続き (72)発明者 森岡 則光 熊本県菊池郡菊陽町津久礼2655番地 東京 エレクトロン九州株式会社熊本事業所内Front Page Continuation (72) Inventor Norimitsu Morioka 2655 Tsukyu, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Tokyo Electron Kyushu Kumamoto Plant

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】被処理体を回転させる機構と、前記被処理
体の表面に処理液を供給する機構を備えた処理装置にお
いて、前記被処理体の裏面側に設けられた被処理体より
小径の筒体と、この筒体と被処理体とを相対的に移動可
能とする昇降機構とを備えたことを特徴とする処理装
置。
1. A processing apparatus comprising a mechanism for rotating an object to be processed and a mechanism for supplying a processing liquid to the surface of the object to be processed, the diameter being smaller than the object to be processed provided on the back side of the object to be processed. And a lifting mechanism that allows the cylinder and the object to be processed to move relative to each other.
【請求項2】前記筒体の先端部の少なくとも外周側に傾
斜面を設けたことを特徴とする請求項1記載の処理装
置。
2. The processing apparatus according to claim 1, wherein an inclined surface is provided at least on the outer peripheral side of the tip of the cylindrical body.
【請求項3】前記筒体の先端部はナイフエッジ状に形成
されていることを特徴とする請求項1記載の処理装置。
3. The processing apparatus according to claim 1, wherein a tip end portion of the cylindrical body is formed into a knife edge shape.
【請求項4】被処理体を停止あるいは低速にて回転させ
る期間は、前記被処理体の裏面と前記被処理体の裏面側
に設けられた被処理体より小径の筒体の先端部を近接さ
せる工程と、被処理体を高速にて回転させる期間は、前
記被処理体の裏面と前記筒体の先端部を離間させる工程
とからなることを特徴とする被処理体の処理方法。
4. During the period in which the object to be processed is stopped or rotated at a low speed, the back surface of the object to be processed and the tip end portion of a tubular body having a diameter smaller than that of the object to be processed provided on the back surface side of the object to be processed are close to each other. And a step of rotating the object to be processed at a high speed, comprising a step of separating the back surface of the object to be processed from the tip of the cylindrical body.
JP20845293A 1993-07-30 1993-07-30 Processing device and processing method Expired - Fee Related JP3290773B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20845293A JP3290773B2 (en) 1993-07-30 1993-07-30 Processing device and processing method

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Application Number Priority Date Filing Date Title
JP20845293A JP3290773B2 (en) 1993-07-30 1993-07-30 Processing device and processing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP30503497A Division JP3210893B2 (en) 1997-10-21 1997-10-21 Processing device and processing method

Publications (2)

Publication Number Publication Date
JPH0745514A true JPH0745514A (en) 1995-02-14
JP3290773B2 JP3290773B2 (en) 2002-06-10

Family

ID=16556435

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5689749A (en) * 1994-08-31 1997-11-18 Tokyo Electron Limited Apparatus for developing a resist-coated substrate
JP2015076534A (en) * 2013-10-10 2015-04-20 東京エレクトロン株式会社 Liquid treatment apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5689749A (en) * 1994-08-31 1997-11-18 Tokyo Electron Limited Apparatus for developing a resist-coated substrate
US5826130A (en) * 1994-08-31 1998-10-20 Tokyo Electron Limited Apparatus and method for developing resist coated on substrate
JP2015076534A (en) * 2013-10-10 2015-04-20 東京エレクトロン株式会社 Liquid treatment apparatus

Also Published As

Publication number Publication date
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