TW201932209A - Substrate treatment method including a substrate liquid processing step and an opposing portion cleaning step - Google Patents

Substrate treatment method including a substrate liquid processing step and an opposing portion cleaning step Download PDF

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TW201932209A
TW201932209A TW107145251A TW107145251A TW201932209A TW 201932209 A TW201932209 A TW 201932209A TW 107145251 A TW107145251 A TW 107145251A TW 107145251 A TW107145251 A TW 107145251A TW 201932209 A TW201932209 A TW 201932209A
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substrate
liquid
facing portion
cleaning liquid
facing
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TW107145251A
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TWI708641B (en
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日野出大輝
藤井定
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日商斯庫林集團股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

A technique is provided to reduce the risk of contaminating the substrate and to clean the opposing portion during the processing of the substrate. A substrate treatment method includes a substrate liquid processing step of causing a lower surface of the opposing portion to face the upper surface of the substrate and performing liquid treatment on the upper surface of the substrate in a state in which the lower surface of the opposing portion and the upper surface of the substrate are caused to rotate in a horizontal posture; and an opposing portion cleaning step of cleaning the opposing portion during the substrate liquid processing step. The opposing portion cleaning step includes a cleaning liquid supply step of supplying a cleaning liquid to the upper surface of the substrate; a liquid film forming step of causing the substrate to rotate in a horizontal posture, whereby a liquid film of the cleaning liquid supplied in the cleaning liquid supply step is formed on the upper surface of the substrate; and a washing liquid supply step of supplying the washing liquid to the lower surface of the opposing portion in a state in which the liquid film is formed on the upper surface of the substrate in the liquid film forming step. The rotation speed of the substrate in the liquid film forming step is lower than the rotation speed of the substrate in the substrate liquid processing step.

Description

基板處理方法 Substrate processing method

本發明係有關於一種用以處理基板之基板處理方法。成為處理對象之基板係例如包括半導體基板、液晶顯示裝置用基板、有機EL(Electroluminescence；電致發光)顯示裝置等FPD(Flat Panel Display；平板顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩(photomask)用基板、陶瓷基板、太陽電池用基板等。 The present invention relates to a substrate processing method for processing a substrate. The substrate to be processed includes, for example, a semiconductor substrate, a substrate for a liquid crystal display device, an FPD (Flat Panel Display) substrate such as an organic EL (Electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, Substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like.

以往，已知有一種技術，係使對向部的下表面與基板的上表面對向並在已使對向部的下表面與基板的上表面以水平姿勢旋轉的狀態下對基板的上表面進行液體處理。在該技術中，會有於液體處理時供給至基板的上表面的處理液的一部分飛散並附著至對向部的下表面之情形。當對附著至對向部的下表面的處理液置之不理時，會有該處理液變成微粒(particle)等異物而污染基板之虞。因此，在適當的時序執行用以對對向部的下表面供給洗淨液並洗淨該下表面之洗淨處理。 Conventionally, a technique is known in which the lower surface of the facing portion is opposed to the upper surface of the substrate, and the upper surface of the substrate is faced in a state where the lower surface of the facing portion and the upper surface of the substrate are rotated in a horizontal posture. Perform liquid treatment. In this technique, a part of the processing liquid supplied to the upper surface of the substrate during liquid processing may be scattered and attached to the lower surface of the facing portion. When the processing liquid attached to the lower surface of the facing portion is left untreated, the processing liquid may become foreign matter such as particles and contaminate the substrate. Therefore, a cleaning process for supplying a cleaning liquid to the lower surface of the facing portion and cleaning the lower surface is performed at an appropriate timing.

例如，在專利文獻1中已揭示有一種裝置，於未進行 基板處理之期間(亦即於裝置的基板保持部未保持有基板之期間)從設置於對向部的側方的洗淨噴嘴對對向部的下表面供給洗淨液並洗淨該下表面。 For example, a device has been disclosed in Patent Document 1 During the processing of the substrate (that is, while the substrate is not held by the substrate holding portion of the apparatus), a cleaning liquid is supplied from the lower surface of the opposite portion of the cleaning nozzle provided on the side of the opposite portion and the lower surface is washed .

[先前技術文獻] [Prior technical literature]

[專利文獻] [Patent Literature]

專利文獻1：日本特開2003-45838號公報。 Patent Document 1: Japanese Patent Application Laid-Open No. 2003-45838.

另一方面，亦會有在基板處理的過程中(亦即在基板保持部保持有基板之期間)洗淨對向部的下表面之情形。然而，在此情形中，會有洗淨時洗淨液以及/或者異物從對向部的下表面落下且洗淨液以及/或者異物附著至基板的上表面並污染該基板之虞。 On the other hand, there may be a case where the lower surface of the facing portion is cleaned during substrate processing (that is, while the substrate is held by the substrate holding portion). However, in this case, the cleaning liquid and / or foreign matter may fall from the lower surface of the facing portion during cleaning, and the cleaning liquid and / or foreign matter may adhere to the upper surface of the substrate and contaminate the substrate.

本發明係有鑑於上述課題而研創，目的在於提供一種降低基板被污染的風險並在基板處理的過程中洗淨對向部之技術。 The present invention has been developed in view of the above-mentioned problems, and an object thereof is to provide a technique for reducing the risk of contamination of a substrate and cleaning the opposing portion during substrate processing.

為了解決上述課題，第一態樣的基板處理方法係包含有：處理工序，係使用具有與基板的上表面對向的下表面之對向部處理前述基板；基板液體處理工序，係對前述基板的 前述上表面進行液體處理；以及對向部洗淨工序，係洗淨前述對向部；前述對向部洗淨工序係具有：清洗液供給工序，係對前述基板的前述上表面供給清洗液；液膜形成工序，係於前述基板的前述上表面形成在前述清洗液供給工序所供給的前述清洗液的液膜；以及洗淨液供給工序，係在前述液膜形成工序中於前述基板的前述上表面形成有前述液膜的狀態下對前述對向部的前述下表面供給洗淨液。 In order to solve the above-mentioned problems, the substrate processing method of the first aspect includes a processing step of processing the substrate using an opposing portion having a lower surface facing the upper surface of the substrate, and a substrate liquid processing step of processing the substrate. of The upper surface is subjected to a liquid treatment; and the facing portion washing step is to wash the facing portion; the facing portion washing step includes a washing liquid supplying step to supply the washing liquid to the upper surface of the substrate; The liquid film forming step is a step of forming a liquid film of the cleaning liquid supplied in the cleaning liquid supply step on the upper surface of the substrate; and a cleaning liquid supplying step is performed on the substrate of the substrate in the liquid film forming step. A cleaning liquid is supplied to the lower surface of the facing portion in a state where the liquid film is formed on the upper surface.

此外，第二態樣係如第一態樣所記載之基板處理方法，其中前述基板液體處理工序係包含有用以使前述對向部的前述下表面與前述基板的前述上表面對向並在已使前述對向部的前述下表面與前述基板的前述上表面以水平姿勢旋轉的狀態下進行液體處理之工序。 In addition, the second aspect is the substrate processing method as described in the first aspect, wherein the substrate liquid processing step includes the step of causing the lower surface of the facing portion to face the upper surface of the substrate and facing the upper surface of the substrate. And a step of performing a liquid treatment in a state where the lower surface of the facing portion and the upper surface of the substrate are rotated in a horizontal posture.

此外，第三態樣係如第一態樣或者第二態樣所記載之基板處理方法，其中前述液膜形成工序係包含有用以使前述基板以水平姿勢旋轉之工序；前述液膜形成工序中的前述基板的旋轉速度係比前述基板液體處理工序中的前述基板的旋轉速度還低速。 In addition, the third aspect is the substrate processing method as described in the first aspect or the second aspect, wherein the liquid film forming step includes a step for rotating the substrate in a horizontal posture; in the liquid film forming step, The rotation speed of the substrate is lower than the rotation speed of the substrate in the substrate liquid processing step.

此外，第四態樣係如第一態樣至第三態樣中任一態樣所記載之基板處理方法，其中前述液膜形成工序係包含有用以增加對於前述基板的前述上表面之前述清洗液的供給量之工序。 In addition, the fourth aspect is the substrate processing method described in any one of the first aspect to the third aspect, wherein the liquid film forming step includes the aforementioned cleaning for increasing the upper surface of the substrate. Process of supplying liquid.

此外，第五態樣係如第一態樣至第四態樣中任一態樣所記載之基板處理方法，其中前述基板液體處理工序係包含有：第一基板液體處理工序，係將前述對向部配置於與前述基板對向之對向位置；前述對向部洗淨工序係包含有用以在前述洗淨液供給工序之前將前述對向部配置於比前述對向位置還上方的位置之工序。 In addition, the fifth aspect is the substrate processing method described in any one of the first aspect to the fourth aspect, wherein the substrate liquid processing step includes: a first substrate liquid processing step, which is a step of The facing portion is disposed at a position opposite to the substrate; the facing portion cleaning step includes the step of arranging the facing portion above the facing position before the cleaning liquid supply step. Procedure.

此外，第六態樣係如第五態樣所記載之基板處理方法，其中前述基板液體處理工序係包含有：第二基板液體處理工序，係將前述對向部配置於比前述對向位置還上方的退避位置；前述對向部洗淨工序係包含有用以在前述洗淨液供給工序之前將前述對向部配置於比前述退避位置還接近前述基板的洗淨位置之工序。 In addition, the sixth aspect is the substrate processing method described in the fifth aspect, wherein the substrate liquid processing step includes a second substrate liquid processing step in which the facing portion is disposed at a position more than the facing position. The upper retreat position; the facing portion cleaning step includes a step of arranging the facing portion at a cleaning position closer to the substrate than the retracted position before the cleaning liquid supply step.

此外，第七態樣係如第一態樣至第六態樣中任一態樣所記載之基板處理方法，其中前述清洗液供給工序與前述洗淨液供給工序係並行進行。 In addition, the seventh aspect is the substrate processing method described in any one of the first aspect to the sixth aspect, wherein the cleaning liquid supply step and the cleaning liquid supply step are performed in parallel.

此外，第八態樣係如第一態樣至第六態樣中任一態樣所記載之基板處理方法，其中前述清洗液供給工序係在前述洗淨液供給工序之前進行。 The eighth aspect is the substrate processing method described in any one of the first aspect to the sixth aspect, wherein the cleaning liquid supply step is performed before the cleaning liquid supply step.

此外，第九態樣係如第三態樣所記載之基板處理方法， 其中進一步具有：第一對向部旋轉工序，係與前述洗淨液供給工序並行進行，用以使前述對向部以與前述液膜形成工序中的前述基板的前述旋轉速度相同的旋轉速度且以水平姿勢旋轉。 In addition, the ninth aspect is the substrate processing method described in the third aspect, The method further includes a first counter-rotating step, which is performed in parallel with the cleaning liquid supply step, so that the counter-rotating section is rotated at the same rotation speed as the rotation speed of the substrate in the liquid film forming step, and Rotate in a horizontal position.

此外，第十態樣係如第九態樣所記載之基板處理方法，其中進一步具有：第二對向部旋轉工序，係在前述洗淨液供給工序以及前述第一對向部旋轉工序之後進行，用以使前述對向部以比前述液膜形成工序中的前述基板的前述旋轉速度還高速旋轉。 In addition, the tenth aspect is the substrate processing method as described in the ninth aspect, further comprising: a second opposing portion rotation step, which is performed after the cleaning liquid supply step and the first opposing portion rotation step. To rotate the facing portion at a higher speed than the rotation speed of the substrate in the liquid film forming step.

此外，第十一態樣係如第十態樣所記載之基板處理方法，其中進一步具有：對向部升降工序，係以前述對向部的前述下表面的高度變得比圍繞前述基板的周圍之罩(cup)部的上端還高且變得比在前述基板液體處理工序中對前述基板的前述上表面供給各種液體之各個噴嘴的各個開口還低之方式使前述對向部升降；在已在前述對向部升降工序中調整前述對向部的前述下表面的高度的狀態下進行前述第二對向部旋轉工序。 In addition, the eleventh aspect is the substrate processing method as described in the tenth aspect, further comprising: an opposing portion raising and lowering step, wherein the height of the lower surface of the opposing portion is higher than that of surrounding the substrate. The upper end of the cup portion is higher and lower than the openings of the respective nozzles that supply various liquids to the upper surface of the substrate in the substrate liquid processing step, so that the opposing portion is raised and lowered. The second facing portion rotation step is performed in a state where the height of the lower surface of the facing portion is adjusted in the facing portion elevating step.

此外，第十二態樣係如第一態樣至第十一態樣中任一態樣所記載之基板處理方法，其中前述對向部洗淨工序係在前述液體處理中之用以將前述基板的前述上表面予以撥水化之撥水化處理之前進行。 In addition, the twelfth aspect is the substrate processing method as described in any one of the first aspect to the eleventh aspect, wherein the facing portion cleaning step is performed in the liquid treatment to apply the foregoing The aforementioned upper surface of the substrate is subjected to a water-repellent water-repellent treatment.

此外，第十三態樣係如第一態樣至第十二態樣中任一態樣所記載之基板處理方法，其中於前述液體處理包含有使用了有機溶劑之處理；前述對向部係耐有機溶劑性的材質。 In addition, the thirteenth aspect is the substrate processing method described in any one of the first aspect to the twelfth aspect, wherein the aforementioned liquid treatment includes a treatment using an organic solvent; the aforementioned opposing department Organic solvent resistant material.

此外，第十四態樣係如第一態樣至第十三態樣中任一態樣所記載之基板處理方法，其中前述對向部的前述下表面係遠寬於前述基板的上表面。 In addition, the fourteenth aspect is the substrate processing method described in any one of the first aspect to the thirteenth aspect, wherein the lower surface of the facing portion is much wider than the upper surface of the substrate.

在第一態樣至第十四態樣的基板處理方法中，由於與基板液體處理時相比液膜形成工序時的基板的旋轉速度為低速，因此能於基板的上表面形成厚的液膜。由於在洗淨液供給工序中形成有該液膜的狀態下對對向部的下表面供給洗淨液，因此即使洗淨液以及/或者異物從對向部的下表面落下，洗淨液以及/或者異物亦會被液膜沖流至基板的外側而不會附著至基板的上表面。因此，能降低基板被污染的風險並在基板處理的過程中洗淨對向部。 In the substrate processing methods of the first aspect to the fourteenth aspect, since the rotation speed of the substrate during the liquid film formation step is lower than that during the substrate liquid processing, a thick liquid film can be formed on the upper surface of the substrate. . Since the washing liquid is supplied to the lower surface of the facing portion in a state where the liquid film is formed in the washing liquid supply step, even if the washing liquid and / or foreign matter falls from the lower surface of the facing portion, the washing liquid and The foreign matter may also be rushed to the outside of the substrate by the liquid film without attaching to the upper surface of the substrate. Therefore, the risk of contamination of the substrate can be reduced, and the opposing portion can be cleaned during substrate processing.

1、1a、1b‧‧‧基板處理裝置 1, 1a, 1b ‧‧‧ substrate processing equipment

4‧‧‧罩部 4‧‧‧ Hood

5、5a‧‧‧對向部 5, 5a‧‧‧ facing department

6‧‧‧對向部移動機構 6‧‧‧ Opposing Department Moving Mechanism

9‧‧‧基板 9‧‧‧ substrate

10‧‧‧控制部 10‧‧‧Control Department

11‧‧‧腔室 11‧‧‧ chamber

31‧‧‧自轉夾具 31‧‧‧rotation fixture

32‧‧‧自轉基座 32‧‧‧rotation base

32a‧‧‧保持面 32a‧‧‧ holding surface

33‧‧‧自轉馬達 33‧‧‧rotation motor

34‧‧‧殼體構件 34‧‧‧shell member

35‧‧‧夾具銷 35‧‧‧Jig Pin

36、53‧‧‧卡合部 36, 53‧‧‧ Engagement Department

37‧‧‧旋轉軸 37‧‧‧rotation axis

41‧‧‧第一防護罩 41‧‧‧First protective cover

42‧‧‧第二防護罩 42‧‧‧Second protective cover

43‧‧‧防護罩移動機構 43‧‧‧ protective cover moving mechanism

44‧‧‧排出埠 44‧‧‧Exhaust port

51、51a‧‧‧本體部 51, 51a‧‧‧Body

52‧‧‧被保持部 52‧‧‧Retained

54、711、712、713、714、 54,711,712,713,714,

715、716、731、732、733‧‧‧開口 715, 716, 731, 732, 733‧‧‧ opening

61、61a‧‧‧保持旋轉機構 61, 61a‧‧‧ holding rotation mechanism

62‧‧‧升降機構 62‧‧‧Lifting mechanism

71、71a、71b、73、74‧‧‧噴嘴 71, 71a, 71b, 73, 74‧‧‧ nozzles

92、513‧‧‧下表面 92, 513‧‧‧ lower surface

101、101a‧‧‧清洗液供給工序 101, 101a‧‧‧ Cleaning liquid supply process

102‧‧‧液膜形成工序 102‧‧‧Liquid film formation process

103‧‧‧洗淨液供給工序 103‧‧‧Cleaning liquid supply process

104‧‧‧第一對向部旋轉工序 104‧‧‧The first facing part rotation process

105‧‧‧對向部升降工序 105‧‧‧ Opposing part lifting process

106‧‧‧第二對向部旋轉工序 106‧‧‧Second facing part rotation process

411‧‧‧第一防護罩側壁部 411‧‧‧ side wall of the first protective cover

412‧‧‧第一防護罩頂蓋部 412‧‧‧Top cover of the first protective cover

421‧‧‧第二防護罩側壁部 421‧‧‧ side wall of the second protective cover

422‧‧‧第二防護罩頂蓋部 422‧‧‧ Top cover of second protective cover

511、511a‧‧‧頂蓋部 511, 511a‧‧‧Top cover

512‧‧‧側壁部 512‧‧‧ sidewall

521‧‧‧筒狀部 521‧‧‧Cylinder

522‧‧‧凸緣部 522‧‧‧ flange

611、611a‧‧‧保持部本體 611, 611a‧‧‧ holding body

612‧‧‧臂 612‧‧‧arm

613‧‧‧凸緣支撐部 613‧‧‧ flange support

614‧‧‧支撐部連接部 614‧‧‧ support connection

615‧‧‧本體旋轉部 615‧‧‧Rotary body

616‧‧‧移動限制部 616‧‧‧Mobility restriction section

J1‧‧‧中心軸 J1‧‧‧Center axis

L1、L1a‧‧‧退避位置 L1, L1a‧‧‧Retreat position

L2、L2a‧‧‧對向位置 L2, L2a‧‧‧ facing position

L3‧‧‧洗淨位置 L3‧‧‧washing position

t1至t5‧‧‧時刻 From t1 to t5‧‧‧

W‧‧‧基板 W‧‧‧ substrate

圖1係用以顯示第一實施形態的基板處理裝置1之概略側視圖。 FIG. 1 is a schematic side view showing a substrate processing apparatus 1 according to the first embodiment.

圖2係用以顯示第一實施形態的基板處理裝置1之概 略側視圖。 FIG. 2 is a schematic diagram showing a substrate processing apparatus 1 according to the first embodiment. Slightly side view.

圖3係用以顯示第一實施形態的基板處理裝置1之概略側視圖。 FIG. 3 is a schematic side view showing the substrate processing apparatus 1 according to the first embodiment.

圖4係從下方觀看第一實施形態的噴嘴71之仰視圖。 FIG. 4 is a bottom view of the nozzle 71 of the first embodiment as viewed from below.

圖5係從下方觀看第一實施形態的噴嘴73之仰視圖。 Fig. 5 is a bottom view of the nozzle 73 of the first embodiment as viewed from below.

圖6係用以顯示第一實施形態的基板處理裝置1中的基板9的處理流程的一例之圖。 FIG. 6 is a diagram showing an example of a processing flow of the substrate 9 in the substrate processing apparatus 1 according to the first embodiment.

圖7係對向部洗淨工序中的各個處理的時序圖。 FIG. 7 is a timing chart of each process in the facing part washing process.

圖8係用以顯示比較例中對向部洗淨工序後的基板9的上表面的髒污之俯視圖。 FIG. 8 is a plan view showing the dirt on the upper surface of the substrate 9 after the facing portion cleaning process in the comparative example.

圖9係用以顯示第一實施形態中對向部洗淨工序後的基板9的上表面的髒污之俯視圖。 FIG. 9 is a plan view showing the dirt on the upper surface of the substrate 9 after the facing portion cleaning process in the first embodiment.

圖10係用以顯示第二實施形態的基板處理裝置1a之概略側視圖。 FIG. 10 is a schematic side view showing a substrate processing apparatus 1a according to the second embodiment.

圖11係用以顯示第二實施形態的基板處理裝置1a之概略側視圖。 FIG. 11 is a schematic side view showing a substrate processing apparatus 1a according to the second embodiment.

圖12係從下方觀看第二實施形態的噴嘴71之仰視圖。 FIG. 12 is a bottom view of the nozzle 71 of the second embodiment as viewed from below.

圖13係用以顯示第二實施形態的噴嘴71的附近之概略剖視圖。 FIG. 13 is a schematic cross-sectional view showing the vicinity of the nozzle 71 in the second embodiment.

圖14係第二實施形態的對向部洗淨工序中的各個處理的時序圖。 FIG. 14 is a timing chart of each process in the facing part washing step of the second embodiment.

圖15係用以顯示第三實施形態的基板處理裝置1b之概略側視圖。 Fig. 15 is a schematic side view showing a substrate processing apparatus 1b according to the third embodiment.

圖16係用以顯示第三實施形態的基板處理裝置1b之概略側視圖。 FIG. 16 is a schematic side view showing a substrate processing apparatus 1b according to the third embodiment.

圖17係基板處理裝置1、1b的變化例的對向部洗淨工序(步驟ST6a)中的各個處理的時序圖。 FIG. 17 is a timing chart of each process in the facing part cleaning step (step ST6a) of a modification of the substrate processing apparatuses 1 and 1b.

以下依據圖式說明實施形態。在圖式中，於具有相同的構成以及功能之部分附上相同的元件符號並省略重複說明。此外，各圖係示意性地顯示。 Embodiments are described below with reference to the drawings. In the drawings, the same component symbols are attached to the parts having the same structure and function, and repeated description is omitted. In addition, each figure is schematically shown.

<1.實施形態> <1. Embodiment>

<1.1.基板處理裝置1的構成> <1.1. Configuration of Substrate Processing Apparatus 1>

圖1、圖2以及圖3係用以顯示第一實施形態的基板處理裝置1之概略側視圖。此外，圖1係顯示對向部5位於退避位置L1的狀態，圖2係顯示對向部5位於對向位置L2的狀態，圖3係顯示對向部5位於洗淨位置L3的狀態。換言之，圖1係顯示藉由對向部移動機構6將對向部5移動至上方的狀態的基板處理裝置1。圖2係顯示藉由對向部移動機構6將對向部5移動至下方的狀態的基板處理裝置1。基板處理裝置1係用以逐片地處理基板9(例如半導體基板)之葉片式的裝置。 1, 2 and 3 are schematic side views showing a substrate processing apparatus 1 according to the first embodiment. In addition, FIG. 1 shows a state where the facing portion 5 is located at the retraction position L1, FIG. 2 shows a state where the facing portion 5 is located at the facing position L2, and FIG. 3 shows a state where the facing portion 5 is at the washing position L3. In other words, FIG. 1 shows the substrate processing apparatus 1 in a state where the opposing portion 5 is moved upward by the opposing portion moving mechanism 6. FIG. 2 shows the substrate processing apparatus 1 in a state where the facing portion 5 is moved downward by the facing portion moving mechanism 6. The substrate processing apparatus 1 is a blade-type apparatus for processing a substrate 9 (for example, a semiconductor substrate) piece by piece.

基板處理裝置1係於腔室11內具備有下述主要構件：自轉夾具(spin chuck)31，係將基板9保持成水平姿勢(法線 沿著鉛直方向之姿勢)；噴嘴71、73，係對被自轉夾具31保持的基板9的上表面供給處理液；罩部4，係圍繞自轉夾具31的周圍；對向部5，係具有與被自轉夾具31保持的基板9的上表面91對向之下表面513；以及對向部移動機構6，係使對向部5於水平方向以及鉛直方向移動。 The substrate processing apparatus 1 is provided in the chamber 11 with the following main components: a spin chuck 31, and the substrate 9 is held in a horizontal posture (normal Posture in the vertical direction); the nozzles 71 and 73 supply the processing liquid to the upper surface of the substrate 9 held by the rotation jig 31; the cover part 4 surrounds the circumference of the rotation jig 31; The upper surface 91 of the substrate 9 held by the rotation jig 31 faces the lower surface 513; and the facing portion moving mechanism 6 moves the facing portion 5 in the horizontal direction and the vertical direction.

於腔室11的側壁的一部分設置有搬入搬出口以及擋門(shutter)(皆省略圖式)，搬入搬出口係用以讓搬運機器人將基板9搬入至腔室11以及將基板9從腔室11搬出，擋門係用以將搬入搬出口予以開閉。此外，於腔室11的頂壁安裝有風扇過濾器單元(FFU；fan filter unit)，風扇過濾器單元係用以將設置有基板處理裝置1的無塵室(cleaning room)內的空氣進一步地清淨化並供給至腔室11內的處理空間。風扇過濾器單元係具備有用以取入無塵室內的空氣並輸送至腔室11內之風扇以及過濾器(例如HEPA(High Efficiency Particulate Air；高效率粒子空氣)過濾器)，並於腔室11內的處理空間形成清淨空氣的降流(down flow)。 A part of the side wall of the chamber 11 is provided with a carry-in / out port and a shutter (both not shown). The carry-in / out port is used to allow the transfer robot to carry the substrate 9 into the chamber 11 and remove the substrate 9 from the chamber. 11 When carrying out, the door is used to open and close the carrying-in port. In addition, a fan filter unit (FFU; fan filter unit) is installed on the top wall of the chamber 11. The fan filter unit is used to further clean the air in a clean room provided with the substrate processing apparatus 1. It is cleaned and supplied to the processing space in the chamber 11. The fan filter unit is provided with a fan and a filter (for example, a HEPA (High Efficiency Particulate Air) filter) for taking in the air in the clean room and sending it to the chamber 11, and is installed in the chamber 11 The inner processing space forms a down flow of clean air.

自轉夾具31係具備有：圓板形狀的自轉基座(spin base)32，係以水平姿勢固定於沿著鉛直方向延伸的旋轉軸37的上端。於自轉基座32的下方設置有用以使旋轉軸37旋轉之自轉馬達(spin motor)33。自轉馬達33係經由旋轉軸37使自轉基座32於水平面內旋轉。此外，以圍繞自轉馬達33以及旋轉軸37的周圍之方式設置有筒狀的殼體(cover) 構件34。 The rotation jig 31 is provided with a circular plate-shaped spin base 32 and is fixed to the upper end of the rotation shaft 37 extending in the vertical direction in a horizontal posture. A spin motor 33 is provided below the rotation base 32 to rotate the rotation shaft 37. The rotation motor 33 rotates the rotation base 32 in a horizontal plane via a rotation shaft 37. A cylindrical casing is provided so as to surround the rotation motor 33 and the rotation shaft 37. Component 34.

圓板形狀的自轉基座32的外徑係比被自轉夾具31保持的圓形的基板9的直徑還稍大。因此，自轉基座32係具有與應保持的基板9的下表面92的整面對向之保持面32a。 The outer diameter of the disk-shaped rotation base 32 is slightly larger than the diameter of the circular substrate 9 held by the rotation jig 31. Therefore, the rotation base 32 has a holding surface 32 a facing the entire surface of the lower surface 92 of the substrate 9 to be held.

於自轉基座32的保持面32a的周緣部立設有複數個夾具銷(chuck pin)35。複數個夾具銷35係沿著與圓形的基板9的外周緣對應的圓周上隔著均等的間隔(例如若為四個夾具銷35則為90°間隔)配置。複數個夾具銷35係藉由收容於自轉基座32內之省略圖示的連桿(link)機構連動地被驅動。自轉夾具31係使複數個夾具銷35各者抵接至基板9的外周端並把持基板9，藉此能在自轉基座32的上方以接近保持面32a的水平姿勢保持該基板9，並能使複數個夾具銷35各者從基板9的外周端離開並解除把持。 A plurality of chuck pins 35 are erected on a peripheral edge portion of the holding surface 32 a of the rotation base 32. The plurality of jig pins 35 are arranged along the circumference corresponding to the outer peripheral edge of the circular substrate 9 at equal intervals (for example, 90 degrees at four jig pins 35). The plurality of jig pins 35 are driven in conjunction with a link mechanism (not shown) housed in the rotation base 32. The rotation jig 31 abuts each of the plurality of jig pins 35 on the outer peripheral end of the substrate 9 and grips the substrate 9, whereby the substrate 9 can be held above the rotation base 32 in a horizontal posture close to the holding surface 32 a and can Each of the plurality of clamp pins 35 is separated from the outer peripheral end of the substrate 9 and the grip is released.

用以覆蓋自轉馬達33之殼體構件34的下端係被固定於腔室11的底壁，殼體構件34的上端係到達自轉基座32的正下方。在自轉夾具31藉由複數個夾具銷35所為之把持而保持基板9的狀態下，自轉馬達33係使旋轉軸37旋轉，藉此能使基板9繞著沿著通過基板9的中心之鉛直方向的中心軸J1旋轉。如此，自轉夾具31、自轉馬達33以及旋轉軸37係作為用以水平地保持基板9並使基板9旋轉 之基板旋轉部而發揮作用。 The lower end of the casing member 34 to cover the rotation motor 33 is fixed to the bottom wall of the chamber 11, and the upper end of the casing member 34 reaches directly below the rotation base 32. In a state where the rotation clamp 31 holds the substrate 9 by the plurality of clamp pins 35, the rotation motor 33 rotates the rotation shaft 37, thereby enabling the substrate 9 to be wound along a vertical direction passing through the center of the substrate 9 The central axis J1 rotates. In this way, the rotation fixture 31, the rotation motor 33, and the rotation shaft 37 are used to horizontally hold the substrate 9 and rotate the substrate 9 The substrate rotating part functions.

以下，將與中心軸J1正交的方向稱為「徑方向」。此外，將徑方向中朝向中心軸J1的方向稱為「內方向內側方向」，將徑方向中朝向與中心軸J1一側相反側的方向稱為「徑方向外側方向」。 Hereinafter, a direction orthogonal to the central axis J1 is referred to as a "radial direction". In addition, a direction toward the central axis J1 in the radial direction is referred to as an "inside direction inside direction", and a direction in the radial direction toward the side opposite to the center axis J1 side is referred to as "radial direction outside direction".

罩部4係將中心軸J1作為中心之環狀的構件，配置於基板9以及自轉夾具31的徑方向外側方向。罩部4係配置於基板9以及自轉夾具31的周圍的全周，並構成為可接住從基板9朝周圍飛散的處理液等。罩部4係具備有第一防護罩(guard)41、第二防護罩42、防護罩移動機構43以及排出埠44。 The cover portion 4 is a ring-shaped member with the center axis J1 as the center, and is disposed in the radial direction outer direction of the substrate 9 and the rotation jig 31. The cover portion 4 is disposed on the entire periphery of the substrate 9 and the rotation jig 31, and is configured to receive a processing liquid or the like scattered from the substrate 9 to the periphery. The cover portion 4 includes a first guard 41, a second guard 42, a guard moving mechanism 43, and a discharge port 44.

第一防護罩41係具有第一防護罩側壁部411以及第一防護罩頂蓋部412。第一防護罩側壁部411係將中心軸J1作為中心之略圓筒狀。第一防護罩頂蓋部412係將中心軸J1作為中心之略圓環板狀，並從第一防護罩側壁部411的上端部朝徑方向內側方向擴展。第二防護罩42係具有第二防護罩側壁部421以及第二防護罩頂蓋部422。第二防護罩側壁部421係將中心軸J1作為中心之略圓筒狀，並位於比第一防護罩側壁部411還徑方向外側方向。第二防護罩頂蓋部422係將中心軸J1作為中心之略圓環板狀，並在比第一防護罩頂蓋部412還上方從第二防護罩側壁部421的 上端部朝徑方向內側方向擴展。 The first protective cover 41 includes a first protective cover side wall portion 411 and a first protective cover top cover portion 412. The first shield side wall portion 411 has a substantially cylindrical shape with the central axis J1 as the center. The first protective cover top cover portion 412 has a substantially annular plate shape with the central axis J1 as the center, and extends from the upper end portion of the first protective cover side wall portion 411 toward the inside in the radial direction. The second protective cover 42 includes a second protective cover side wall portion 421 and a second protective cover top cover portion 422. The second shield side wall portion 421 has a substantially cylindrical shape with the central axis J1 as the center, and is located in an outer diameter direction than the first shield side wall portion 411. The second protective cover top cover portion 422 is a slightly annular plate shape with the central axis J1 as the center, and extends from the second protective cover side wall portion 421 above the first protective cover top cover portion 412. The upper end portion expands toward the inside in the radial direction.

第一防護罩頂蓋部412的內徑以及第二防護罩頂蓋部422的內徑係比自轉夾具31的自轉基座32的外徑以及對向部5的外徑稍大。第一防護罩頂蓋部412的上表面以及下表面係分別為愈朝向徑方向外側方向則愈朝向下方之傾斜面。第二防護罩頂蓋部422的上表面以及下表面係分別為愈朝向徑方向外側方向則愈朝向下方之傾斜面。 The inner diameter of the first shield top cover portion 412 and the inner diameter of the second shield top cover portion 422 are slightly larger than the outer diameter of the rotation base 32 of the rotation jig 31 and the outer diameter of the facing portion 5. The upper surface and the lower surface of the top cover portion 412 of the first protective cover are inclined surfaces that are directed downward as they are directed outward in the radial direction. The upper surface and the lower surface of the second protective cover top cover portion 422 are inclined surfaces that are directed downward as they are directed outward in the radial direction.

防護罩移動機構43係將第一防護罩41以及第二防護罩42朝上下方向移動，藉此將用以接住來自基板9的處理液等之防護罩在第一防護罩41與第二防護罩42之間切換。被罩部4的第一防護罩41以及第二防護罩42接住的處理液等係經由排出埠44朝腔室11的外部排出。此外，第一防護罩41內以及第二防護罩42內的氣體亦經由排出埠44朝腔室11的外部排出。 The protective cover moving mechanism 43 moves the first protective cover 41 and the second protective cover 42 in an up-and-down direction, thereby placing a protective cover for receiving a processing liquid from the substrate 9 on the first protective cover 41 and the second protective cover. The cover 42 is switched. The processing liquid and the like received by the first protective cover 41 and the second protective cover 42 of the cover portion 4 are discharged to the outside of the chamber 11 through the discharge port 44. In addition, the gas in the first protective cover 41 and the second protective cover 42 is also discharged to the outside of the chamber 11 through the exhaust port 44.

對向部5係耐有機溶劑性的材質(例如PCTFE(Poly Chloro Tri Fluoro Ethylene；聚三氟氯乙烯)等氟系樹脂或者PEAK(polyaryletherketone；聚芳基醚酮)PCTFE等)，且俯視觀看時為略圓形的構件。對向部5係具有與基板9的上表面91對向之下表面513的構件。對向部5的外徑係比基板9的外徑以及自轉基座32的外徑還大。 Opposite part 5 is an organic solvent-resistant material (such as PCTFE (Poly Chloro Tri Fluoro Ethylene; fluoro resin) or PEAK (polyaryletherketone); PCTFE) It is a slightly round member. The facing portion 5 is a member having a lower surface 513 facing the upper surface 91 of the substrate 9. The outer diameter of the facing portion 5 is larger than the outer diameter of the substrate 9 and the outer diameter of the rotation base 32.

對向部5的下表面513較佳為親水面。將下表面513作為親水面之手段並無特別限定。作為一例，可列舉用以藉由塗布(coating)加工於下表面513形成親水性的膜之方法或者用以藉由噴沙(sandblast)加工於下表面513形成細微凹凸之方法。 The lower surface 513 of the facing portion 5 is preferably a hydrophilic surface. The means for using the lower surface 513 as a hydrophilic surface is not particularly limited. As an example, a method for forming a hydrophilic film by coating on the lower surface 513 or a method for forming fine irregularities on the lower surface 513 by sandblasting can be mentioned.

對向部5係具備有本體部51。本體部51係具備有頂蓋部511以及側壁部512。於頂蓋部511的中央部設置有開口54。開口54係例如俯視觀看時為略圓形。開口54的直徑係比基板9的直徑還小。頂蓋部511係將中心軸J1作為中心之略圓環板狀的構件，且頂蓋部511的下表面513係與基板9的上表面91對向。側壁部512係將中心軸J1作為中心之略圓筒狀的構件，並從頂蓋部511的外周部朝下方擴展。在圖2所示的狀態下，對向部5係與基板9一體性地繞著中心軸J1旋轉，對向部5的下表面513與基板9的上表面91之間的環境氣體係與腔室11內的其他空間的環境氣體阻隔。 The facing portion 5 is provided with a body portion 51. The main body portion 51 includes a top cover portion 511 and a side wall portion 512. An opening 54 is provided in a central portion of the top cover portion 511. The opening 54 is, for example, slightly circular when viewed from above. The diameter of the opening 54 is smaller than the diameter of the substrate 9. The top cover portion 511 is a member having a substantially annular plate shape with the central axis J1 as the center, and the lower surface 513 of the top cover portion 511 is opposed to the upper surface 91 of the substrate 9. The side wall portion 512 is a substantially cylindrical member having the center axis J1 as the center, and is extended downward from the outer peripheral portion of the top cover portion 511. In the state shown in FIG. 2, the opposing portion 5 and the substrate 9 are integrally rotated around the central axis J1, and the ambient gas system and cavity between the lower surface 513 of the opposing portion 5 and the upper surface 91 of the substrate 9 are integrated. The ambient gas in other spaces in the chamber 11 is blocked.

對向部移動機構6係具備有保持旋轉機構61以及升降機構62。保持旋轉機構61係保持對向部5的本體部51。保持旋轉機構61係具備有保持部本體611、臂612以及本體旋轉部615。本體旋轉部615係可使保持部本體611以及本體部51繞著中心軸J1旋轉之機構。 The facing portion moving mechanism 6 includes a holding rotation mechanism 61 and a lifting mechanism 62. The holding and rotating mechanism 61 holds the body portion 51 of the facing portion 5. The holding and rotating mechanism 61 includes a holding part body 611, an arm 612, and a body rotating part 615. The main body rotating portion 615 is a mechanism that can rotate the holding portion main body 611 and the main body portion 51 about the central axis J1.

保持部本體611係例如形成為以中心軸J1作為中心之圓筒狀，並連接至對向部5的本體部51。臂612係略水平地延伸之棒狀的臂。臂612的一方的端部係連接至本體旋轉部615，另一方的端部係連接至升降機構62。 The holding portion body 611 is, for example, formed in a cylindrical shape with the central axis J1 as the center, and is connected to the body portion 51 of the facing portion 5. The arm 612 is a rod-shaped arm extending slightly horizontally. One end portion of the arm 612 is connected to the body rotation portion 615, and the other end portion is connected to the lifting mechanism 62.

噴嘴71係從保持部本體611的中央部朝下方突出。噴嘴71係非接觸地插入至保持部本體611的側部。 The nozzle 71 protrudes downward from the center of the holding portion body 611. The nozzle 71 is inserted into a side portion of the holding portion body 611 in a non-contact manner.

在圖1所示的狀態下，對向部5係在基板9以及自轉夾具31的上方被保持旋轉機構61垂吊。在以下的說明中，將圖1所示的對向部5的上下方向的位置稱為「退避位置L1」。所謂退避位置L1係指對向部5被對向部移動機構6保持並從自轉夾具31朝上方離開的位置。 In the state shown in FIG. 1, the facing portion 5 is hung by the holding rotation mechanism 61 above the substrate 9 and the rotation jig 31. In the following description, the position in the up-down direction of the facing portion 5 shown in FIG. 1 is referred to as a “retracted position L1”. The retracted position L1 refers to a position where the opposing portion 5 is held by the opposing portion moving mechanism 6 and separated upward from the rotation jig 31.

升降機構62係使對向部5與保持旋轉機構61一起朝上下方向移動。圖2係用以顯示對向部5已從圖1所示的退避位置L1下降的狀態之剖視圖。在以下的說明中，將圖2所示的對向部5的上下方向的位置稱為「對向位置L2」。亦即，升降機構62係使對向部5在退避位置L1與對向位置L2之間相對於自轉夾具31於上下方向相對性地移動。對向位置L2係比退避位置L1還下方的位置。換言之，所謂對向位置L2係指對向部5在比退避位置L1還在上下方向中接近自轉夾具31之位置。 The elevating mechanism 62 moves the facing portion 5 together with the holding and rotating mechanism 61 in the vertical direction. FIG. 2 is a sectional view showing a state where the facing portion 5 has descended from the retracted position L1 shown in FIG. 1. In the following description, the position in the up-down direction of the facing portion 5 shown in FIG. 2 will be referred to as "opposing position L2". That is, the elevating mechanism 62 moves the opposing portion 5 relative to the rotation jig 31 in the up-down direction between the retracted position L1 and the opposing position L2. The facing position L2 is a position lower than the retreat position L1. In other words, the facing position L2 refers to a position where the facing portion 5 is closer to the rotation jig 31 in the up-down direction than the retracted position L1.

圖3係用以顯示對向部5已從圖1所示的退避位置L1下降的狀態之剖視圖。在以下的說明中，將圖3所示的對向部5的上下方向的位置稱為「洗淨位置L3」。洗淨位置L3係比退避位置L1還下方且比對向位置L2還上方之中間的位置。如後述般，在對向部5配置於洗淨位置L3的狀態下，從噴嘴74朝對向部5的下表面513噴出洗淨液，藉此進行下表面513的洗淨。 FIG. 3 is a cross-sectional view showing a state where the facing portion 5 has descended from the retracted position L1 shown in FIG. 1. In the following description, the position in the up-down direction of the facing portion 5 shown in FIG. 3 will be referred to as a "washing position L3". The washing position L3 is a middle position lower than the retreat position L1 and higher than the facing position L2. As will be described later, in a state where the facing portion 5 is disposed at the washing position L3, the washing liquid is ejected from the nozzle 74 toward the lower surface 513 of the facing portion 5, thereby cleaning the lower surface 513.

對向部5係構成為可藉由本體旋轉部615的旋轉驅動力繞著中心軸J1旋轉。 The opposing portion 5 is configured to be rotatable about the central axis J1 by the rotational driving force of the main body rotating portion 615.

基板處理裝置1係具備有用以對基板9的下表面92供給處理液之噴嘴72。噴嘴72係略圓筒狀的噴嘴，並安裝至形成於自轉基座32的中央部之略圓柱狀的貫通孔。噴嘴72的上端係朝向被自轉夾具31保持的基板9的下表面92的中央部並呈開口，從噴嘴72噴出的處理液或者氣體係被供給至基板9的下表面92的中央部。 The substrate processing apparatus 1 includes a nozzle 72 for supplying a processing liquid to the lower surface 92 of the substrate 9. The nozzle 72 is a substantially cylindrical nozzle, and is attached to a substantially cylindrical through-hole formed in a center portion of the rotation base 32. The upper end of the nozzle 72 opens toward the center of the lower surface 92 of the substrate 9 held by the rotation jig 31, and the processing liquid or gas system ejected from the nozzle 72 is supplied to the center of the lower surface 92 of the substrate 9.

基板處理裝置1係具備有：噴嘴73，係將從省略圖示的供給源所供給的處理液噴出至基板9的上表面91。噴嘴73係朝下方呈開口之噴嘴，且例如構成為噴出頭安裝於省略圖示的噴嘴臂的前端。以省略圖示的馬達使噴嘴臂的基端部繞著沿著鉛直方向的軸轉動，藉此噴嘴73係在被自轉夾具31保持的基板9的上方圓弧狀地移動。因此，噴嘴 73係可在位於基板9的上方之處理位置(圖1中以二點鏈線所示的位置)與位於基板9的側方之待機位置(圖1中以實線所示的位置)之間移動。此外，如圖1所示，可使噴嘴73移動至處理位置之時序係對向部5位於退避位置L1之時序(參照圖1)。 The substrate processing apparatus 1 includes a nozzle 73 that ejects a processing liquid supplied from a supply source (not shown) onto the upper surface 91 of the substrate 9. The nozzle 73 is a nozzle which opens downward, and is comprised so that a discharge head may be attached to the front-end | tip of the nozzle arm which is not shown in figure. The base end portion of the nozzle arm is rotated about an axis along the vertical direction by a motor (not shown), whereby the nozzle 73 moves in an arc shape above the substrate 9 held by the rotation jig 31. So the nozzle The 73 series can be located between the processing position above the substrate 9 (the position shown by the two-dot chain line in FIG. 1) and the standby position on the side of the substrate 9 (the position shown by the solid line in FIG. 1). mobile. In addition, as shown in FIG. 1, the timing at which the nozzle 73 can be moved to the processing position is the timing at which the facing portion 5 is located at the retreat position L1 (see FIG. 1).

圖4係從下方觀看第一實施形態的噴嘴71之仰視圖。圖5係從下方觀看第一實施形態的噴嘴73之仰視圖。噴嘴71、73係構成為可噴出從省略圖示的複數個處理液供給源所供給的各種處理液。詳細而言，於噴嘴71的下表面設置有三個開口712、714、715，並於噴嘴73的下表面設置有三個開口731、732、733。 FIG. 4 is a bottom view of the nozzle 71 of the first embodiment as viewed from below. Fig. 5 is a bottom view of the nozzle 73 of the first embodiment as viewed from below. The nozzles 71 and 73 are configured to discharge various processing liquids supplied from a plurality of processing liquid supply sources (not shown). Specifically, three openings 712, 714, and 715 are provided on the lower surface of the nozzle 71, and three openings 731, 732, and 733 are provided on the lower surface of the nozzle 73.

在此，說明可從開口712噴出純水、可從開口714噴出IPA(isopropylalcohol：異丙醇)、可從開口715噴出撥水化劑(例如矽烷基(silyl)化劑)之情形。此外，說明可從開口731噴出氫氟酸、可從開口732噴出純水、可從開口733噴出SC1液體(Standard clean-1；第一標準清洗液，亦即已混合了過氧化氫水與氨的處理液)之情形。此外，這些情形僅為一例，亦可構成為可對基板9的上表面91噴出其他的處理液。此外，亦可設置有可噴出從省略圖示的氣體供給源所供給的氣體(例如氮氣)之開口。此外，雖然在圖示中顯示分別為一個噴嘴71、73，但亦可因應處理液的種類設置有複數個噴嘴。 Here, the case where pure water can be sprayed from the opening 712, IPA (isopropylalcohol) can be sprayed from the opening 714, and a water repellent (for example, a silyl) can be sprayed from the opening 715 is demonstrated. In addition, it is explained that hydrofluoric acid can be sprayed from the opening 731, pure water can be sprayed from the opening 732, and SC1 liquid (Standard clean-1; Standard clean-1; the first standard cleaning liquid, which has been mixed with hydrogen peroxide water and ammonia Treatment solution). In addition, these cases are only examples, and it can also be comprised so that another processing liquid may be ejected to the upper surface 91 of the board | substrate 9. In addition, an opening capable of ejecting a gas (for example, nitrogen gas) supplied from a gas supply source (not shown) may be provided. Although each of the nozzles 71 and 73 is shown in the figure, a plurality of nozzles may be provided in accordance with the type of the processing liquid.

此外，基板處理裝置1係具備有：噴嘴74，係用以將從省略圖示的供給源所供給的洗淨液供給至對向部5的下表面513。噴嘴74係於斜上方呈開口之噴嘴，且構成為例如將噴出頭安裝至省略圖示的噴嘴臂的前端。以省略圖示的馬達使噴嘴臂的基端部繞著沿著鉛直方向的軸轉動，藉此噴嘴74係可在接近對向部5並朝對向部5的下表面513呈開口之處理位置(圖1中以二點鏈線所示的位置)與已從對向部5離開的待機位置(圖1中以實線所示的位置)之間移動。此外，如圖1或者圖3所示，能使噴嘴74移動至處理位置之時序係對向部5位於退避位置L1或者洗淨位置L3之時序。 In addition, the substrate processing apparatus 1 is provided with a nozzle 74 for supplying a cleaning liquid supplied from a supply source (not shown) to the lower surface 513 of the facing portion 5. The nozzle 74 is a nozzle which opens diagonally upward, and is comprised so that a nozzle may be attached to the front-end | tip of the nozzle arm which is not shown in figure, for example. A motor (not shown) is used to rotate the base end portion of the nozzle arm about an axis along the vertical direction, whereby the nozzle 74 is a processing position where the nozzle 74 can approach the opposing portion 5 and open toward the lower surface 513 of the opposing portion 5. (The position shown by the two-dot chain line in FIG. 1) and the standby position (the position shown by the solid line in FIG. 1) that has been separated from the facing portion 5. In addition, as shown in FIG. 1 or FIG. 3, the timing at which the nozzle 74 can be moved to the processing position is the timing at which the facing portion 5 is located at the retreat position L1 or the cleaning position L3.

此外，在本說明書中，會有將藥液、純水以及IPA統稱為處理液之情形。此外，會有將以沖流基板9的微粒以及/或者處理液為目的而使用的液體(典型而言為純水)稱為清洗液之情形。會有將以沖流對向部5的下表面513的微粒以及/或者處理液為目的而使用的液體(典型而言為純水)稱為洗淨液之情形。 In addition, in this specification, a chemical liquid, pure water, and IPA may be collectively called a processing liquid. In addition, a liquid (typically, pure water) used for the purpose of fine particles and / or a processing liquid of the flow substrate 9 may be referred to as a cleaning liquid. A liquid (typically, pure water) used for the purpose of fine particles and / or a treatment liquid on the lower surface 513 of the flushing facing portion 5 may be referred to as a cleaning liquid.

此外，基板處理裝置1係具備有用以控制裝置各部的動作之控制部10。作為控制部10的硬碟之構成係與一般的電腦同樣。亦即，控制部10係構成為具備有下述構件等：CPU(Central Processing Unit；中央處理器)，係進行各種運 算處理；ROM(Read Only Memory；唯讀記憶體)，係屬於用以記憶基本程式之讀出專用的記憶體；RAM(Random Access Memory；隨機存取記憶體)，係屬於用以記憶各種資訊之讀寫自如的記憶體；以及磁碟，係用以預先記憶控制用的軟體以及資料等。控制部10的CPU係執行預定的處理程式，藉此控制部10係控制基板處理裝置1的各個動作機構，從而進行基板處理裝置1中的處理。 In addition, the substrate processing apparatus 1 includes a control unit 10 for controlling operations of each unit of the apparatus. The configuration of the hard disk serving as the control unit 10 is the same as that of a general computer. That is, the control unit 10 is configured to include a CPU (Central Processing Unit), which performs various operations. Calculation processing; ROM (Read Only Memory) is a read-only memory used to store basic programs; RAM (Random Access Memory) is used to store various information Freely readable and writable memory; and magnetic disks, which are used for pre-memory of control software and data. The CPU of the control unit 10 executes a predetermined processing program, whereby the control unit 10 controls each operation mechanism of the substrate processing apparatus 1 to perform processing in the substrate processing apparatus 1.

<1.2.基板處理裝置1的動作例> <1.2. Example of operation of substrate processing apparatus 1>

圖6係用以顯示第一實施形態的基板處理裝置1中的基板9的處理流程的一例之圖。以下，說明基板處理裝置1中的處理例。此外，圖6係顯示各個工序中配置有對向部5之高度位置。 FIG. 6 is a diagram showing an example of a processing flow of the substrate 9 in the substrate processing apparatus 1 according to the first embodiment. Hereinafter, a processing example in the substrate processing apparatus 1 will be described. In addition, FIG. 6 shows a height position where the facing portion 5 is disposed in each step.

首先，在對向部5位於退避位置L1的狀態下，藉由外部的搬運機器人將基板9搬入至腔室11內並載置於自轉基座32的夾具銷35上。結果，該基板9係被夾具銷35從下側支撐(步驟ST1)。 First, in a state where the facing portion 5 is located at the retreat position L1, the substrate 9 is carried into the chamber 11 by an external transfer robot and is placed on the clamp pin 35 of the rotation base 32. As a result, the substrate 9 is supported from the lower side by the clamp pin 35 (step ST1).

當基板9被搬入時，升降機構62係在將對向部5配置於退避位置L1的狀態下藉由自轉馬達33開始旋轉基板9。 When the substrate 9 is carried in, the lifting mechanism 62 starts the rotation of the substrate 9 by the rotation motor 33 in a state where the facing portion 5 is arranged at the retreat position L1.

在此狀態下，對基板9的上表面91執行使用了各種處 理液的液體處理。首先，執行用以從噴嘴73的開口731對基板9的上表面91供給氫氟酸之氫氟酸處理(步驟ST2)。於氫氟酸處理時，第一防護罩41係位於能接住從基板9飛散的處理液之高度。在氫氟酸處理中，從設置於噴嘴73的下表面之開口731對旋轉中的基板9的上表面91連續性地供給氫氟酸。已著液至上表面91的氫氟酸係藉由該基板9的旋轉而朝基板9的外周部擴展，並在上表面91的整體進行氫氟酸處理。此期間係例如為30秒。此外，此期間中的基板9以及對向部5的旋轉速度係例如為800rpm(revolution per minute；轉速/分)至1000rpm。 In this state, various operations are performed on the upper surface 91 of the substrate 9. Liquid handling of lysates. First, a hydrofluoric acid process for supplying hydrofluoric acid to the upper surface 91 of the substrate 9 from the opening 731 of the nozzle 73 is performed (step ST2). During the hydrofluoric acid treatment, the first protective cover 41 is located at a height capable of receiving the processing liquid scattered from the substrate 9. In the hydrofluoric acid treatment, hydrofluoric acid is continuously supplied to the upper surface 91 of the rotating substrate 9 from the opening 731 provided on the lower surface of the nozzle 73. The hydrofluoric acid that has been deposited on the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and is subjected to hydrofluoric acid treatment on the entire upper surface 91. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, from 800 rpm (revolution per minute) to 1000 rpm.

停止從開口731噴出氫氟酸後，開始從開口732噴出清洗液(步驟ST3)。於清洗處理時，從設置於噴嘴73的下表面之開口732對旋轉中的基板9的上表面91連續性地供給清洗液。已著液至上表面91的清洗液係藉由該基板9的旋轉而朝基板9的外周部擴展，並與殘存於上表面91上的氫氟酸一起從基板9的外周緣朝徑方向外側方向飛散。從基板9飛散的氫氟酸以及清洗液係被第一防護罩41的內壁接住並經由排出埠44被廢棄。藉此，實質性地與基板9的上表面91的清洗處理一起進行第一防護罩41的洗淨。此期間係例如為30秒。此外，此期間中的基板9以及對向部5的旋轉速度係例如為1200rpm。 After the ejection of hydrofluoric acid from the opening 731 is stopped, the ejection of the cleaning liquid from the opening 732 is started (step ST3). During the cleaning process, the cleaning liquid is continuously supplied to the upper surface 91 of the rotating substrate 9 from the opening 732 provided on the lower surface of the nozzle 73. The cleaning liquid that has been applied to the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and along with the hydrofluoric acid remaining on the upper surface 91, moves outward from the outer peripheral edge of the substrate 9 in the radial direction. Flying away. The hydrofluoric acid and the cleaning liquid scattered from the substrate 9 are received by the inner wall of the first protective cover 41 and discarded through the discharge port 44. Thereby, the cleaning of the first protective cover 41 is substantially performed together with the cleaning process of the upper surface 91 of the substrate 9. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, 1200 rpm.

停止從開口732噴出清洗液後，開始從開口733噴出 SC1液體(步驟ST4)。在SC1處理時，從設置於噴嘴73的下表面之開口733對旋轉中的基板9的上表面91連續性地供給SC1液體。已著液至上表面91的SC1液體係藉由該基板9的旋轉而朝基板9的外周部擴展，並在上表面91的整體進行SC1處理。此期間係例如為30秒。此外，此期間中的基板9以及對向部5的旋轉速度係例如為800rpm。從基板9飛散的SC1液體係被第二防護罩42的內壁接住並從排出埠44被廢棄。 After spraying the cleaning solution from the opening 732 is stopped, spraying from the opening 733 is started. SC1 liquid (step ST4). During the SC1 process, the SC1 liquid is continuously supplied from the opening 733 provided on the lower surface of the nozzle 73 to the upper surface 91 of the substrate 9 in rotation. The SC1 liquid system that has been deposited on the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and performs SC1 treatment on the entire upper surface 91. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, 800 rpm. The SC1 liquid system scattered from the substrate 9 is caught by the inner wall of the second protective cover 42 and is discarded from the discharge port 44.

停止從開口733噴出SC1液體後，開始從開口732噴出清洗液(步驟ST5)。於清洗處理時，從設置於噴嘴73的下表面之開口732對旋轉中的基板9的上表面91連續性地供給清洗液。已著液至上表面91的清洗液係藉由該基板9的旋轉而朝基板9的外周部擴展，並與殘存於上表面91上的SC1液體一起從基板9的外周緣朝徑方向外側方向飛散。從基板9飛散的SC1液體以及清洗液係被第一防護罩41的內壁接住並經由排出埠44被廢棄。藉此，實質性地與基板9的上表面91的清洗處理一起進行第一防護罩41的洗淨。此期間係例如為30秒。此外，此期間中的基板9以及對向部5的旋轉速度係例如為1200rpm。 After the ejection of the SC1 liquid from the opening 733 is stopped, the ejection of the cleaning liquid from the opening 732 is started (step ST5). During the cleaning process, the cleaning liquid is continuously supplied to the upper surface 91 of the rotating substrate 9 from the opening 732 provided on the lower surface of the nozzle 73. The cleaning liquid that has been applied to the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and scatters from the outer peripheral edge of the substrate 9 in the radial direction along with the SC1 liquid remaining on the upper surface 91. . The SC1 liquid and the cleaning liquid scattered from the substrate 9 are received by the inner wall of the first protective cover 41 and discarded through the discharge port 44. Thereby, the cleaning of the first protective cover 41 is substantially performed together with the cleaning process of the upper surface 91 of the substrate 9. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, 1200 rpm.

此外，在步驟ST3或者步驟ST5的清洗處理中，亦可不從噴嘴73的開口732噴出清洗液而是從噴嘴71的開口712噴出清洗液。此外，在步驟ST3或者步驟ST5的清洗 處理中，亦可從開口712、732的雙方供給清洗液。 In the cleaning process in step ST3 or step ST5, the cleaning liquid may not be ejected from the opening 732 of the nozzle 73 but the cleaning liquid may be ejected from the opening 712 of the nozzle 71. In addition, cleaning in step ST3 or step ST5 During the process, the cleaning liquid may be supplied from both of the openings 712 and 732.

之後，升降機構62係使對向部5從退避位置L1(參照圖1)下降至洗淨位置L3(參照圖3)。此外，藉由未圖示的驅動機構使噴嘴74移動至處理位置(圖3所示的位置)。接著，從噴嘴74將洗淨液供給至對向部5的下表面513，藉此進行用以洗淨該下表面513之對向部洗淨處理(步驟ST6)。此外，在後述的<1.3.對向部洗淨工序的處理例>詳細地說明對向部洗淨處理。 Thereafter, the elevating mechanism 62 lowers the facing portion 5 from the retracted position L1 (see FIG. 1) to the washing position L3 (see FIG. 3). The nozzle 74 is moved to a processing position (a position shown in FIG. 3) by a driving mechanism (not shown). Next, the cleaning liquid is supplied from the nozzle 74 to the lower surface 513 of the opposing portion 5, thereby performing an opposing portion cleaning process for cleaning the lower surface 513 (step ST6). In addition, the <1.3. Process example of an opposing part washing | cleaning process> mentioned later is demonstrated in detail.

當結束對向部洗淨處理時，藉由未圖示的驅動機構使噴嘴74移動至待機位置(圖1中以實線所示的位置)。此外，升降機構62係使對向部5從洗淨位置L3(參照圖3)下降至對向位置L2(參照圖2)。藉此，形成被自轉基座32的保持面32a、頂蓋部511的下表面513以及側壁部512的內周面圍繞的空間。在此狀態下，執行用以從噴嘴71的開口714對基板9的上表面91供給IPA之IPA處理(步驟ST7)。在IPA處理時，第二防護罩42係位於能接住從基板9飛散的IPA的高度。在IPA處理中，從設置於噴嘴71的下表面之開口714對旋轉中的基板9的上表面91連續性地供給IPA。已著液至上表面91的IPA係進行用以藉由該基板9的旋轉而朝基板9的外周部擴展並在上表面91的整體將純水置換成IPA之IPA處理。此外，亦可以促進IPA置換為目的藉由省略圖示的加熱機構對基板9進行加熱處理。此期間係 例如為30秒。此外，此期間中的基板9以及對向部5的旋轉速度係例如為300rpm。此外，IPA的噴出流量係例如為300ml/m(毫升/分)。 When the facing portion washing process is finished, the nozzle 74 is moved to a standby position (a position shown by a solid line in FIG. 1) by a driving mechanism (not shown). The lifting mechanism 62 lowers the facing portion 5 from the washing position L3 (see FIG. 3) to the facing position L2 (see FIG. 2). Thereby, a space surrounded by the holding surface 32a of the rotation base 32, the lower surface 513 of the top cover portion 511, and the inner peripheral surface of the side wall portion 512 is formed. In this state, an IPA process is performed to supply IPA to the upper surface 91 of the substrate 9 from the opening 714 of the nozzle 71 (step ST7). During the IPA process, the second protective cover 42 is located at a height capable of catching the IPA scattered from the substrate 9. In the IPA process, the IPA is continuously supplied to the upper surface 91 of the rotating substrate 9 from the opening 714 provided on the lower surface of the nozzle 71. The IPA that has been immersed on the upper surface 91 is an IPA treatment for expanding the outer surface of the substrate 9 by the rotation of the substrate 9 and replacing pure water with IPA on the entire upper surface 91. In addition, for the purpose of promoting IPA replacement, the substrate 9 may be heated by a heating mechanism (not shown). During this period For example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, 300 rpm. The discharge flow rate of the IPA is, for example, 300 ml / m (ml / min).

停止從開口714噴出IPA後，開始從開口715噴出撥水化劑(步驟ST8)。於撥水化處理時，從設置於噴嘴73的下表面之開口715對旋轉中的基板9的上表面91連續性地供給撥水化劑。已著液至上表面91的撥水化劑係藉由該基板9的旋轉而朝基板9的外周部擴展，並在上表面91的整體進行用以表面改質成撥水性之撥水化處理。此期間係例如為30秒。此外，此期間中的基板9以及對向部5的旋轉速度係例如為500rpm。從基板9飛散的撥水化劑係被第二防護罩42的內壁接住並從排出埠44被廢棄。此外，撥水化劑的噴出流量係例如為300ml/m。 After the discharge of the IPA from the opening 714 is stopped, the water-repellent agent is started to be discharged from the opening 715 (step ST8). During the water-repellent treatment, the water-repellent agent is continuously supplied to the upper surface 91 of the rotating substrate 9 from the opening 715 provided on the lower surface of the nozzle 73. The water-repellent agent that has been applied to the upper surface 91 is expanded toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and a water-repellent treatment for surface modification to water repellency is performed on the entire upper surface 91. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, 500 rpm. The water-repellent agent scattered from the substrate 9 is caught by the inner wall of the second protective cover 42 and is discarded from the discharge port 44. The discharge flow rate of the water-repellent agent is, for example, 300 ml / m.

停止從開口715噴出撥水化劑後，以與上述同樣的處理條件進行IPA處理(步驟ST9)。當結束各種液體處理時，接著執行旋乾(spin drying)處理(步驟ST10)。在旋乾處理中，基板9以及對向部5係以比各種液體處理時還快的速度旋轉。此期間中的基板9以及對向部5的旋轉速度係例如為1500rpm。藉此，附著至基板9以及對向部5的各種液體係從外周緣朝徑方向外側方向飛散並被第二防護罩42的內壁接住，經由排出埠44被廢棄。 After the spraying of the water-repellent agent from the opening 715 is stopped, the IPA treatment is performed under the same processing conditions as described above (step ST9). When the various liquid processes are ended, a spin drying process is then performed (step ST10). In the spin-drying process, the substrate 9 and the facing portion 5 are rotated at a faster speed than during the processing of various liquids. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, 1500 rpm. As a result, the various liquid systems attached to the substrate 9 and the facing portion 5 are scattered from the outer peripheral edge toward the outside in the radial direction, are caught by the inner wall of the second protective cover 42, and are discarded through the discharge port 44.

當結束旋乾處理時，對向部5係藉由升降機構62而上升並變成圖1所示的狀態，且基板9係被外部的搬運機器人從自轉夾具31搬出(步驟ST11)。 When the spin-drying process is completed, the facing portion 5 is raised by the lifting mechanism 62 and becomes the state shown in FIG. 1, and the substrate 9 is carried out from the rotation jig 31 by an external transfer robot (step ST11).

藉此，結束基板處理裝置1所為之各種處理。在此，基板處理裝置1所為之處理係包含有：基板液體處理工序，係包含有對基板9進行液體處理(在上述例子中為步驟ST2至步驟ST5、步驟ST7至步驟ST9)以及用以使基板9乾燥之乾燥處理(在上述例子中為步驟ST10)；以及對向部洗淨工序(在上述例子中為步驟ST6)，係在基板液體處理工序的過程中執行，用以洗淨對向部5。以下詳細地說明對向部洗淨工序。 Thereby, various processes performed by the substrate processing apparatus 1 are completed. Here, the processing performed by the substrate processing apparatus 1 includes a substrate liquid processing step, which includes performing liquid processing on the substrate 9 (in the above example, steps ST2 to ST5, steps ST7 to ST9), and for The drying process for drying the substrate 9 (in the above example, step ST10); and the facing portion cleaning step (in the above example, step ST6), which is performed during the substrate liquid processing step to clean the opposite side Department 5. The facing portion washing step will be described in detail below.

<1.3.對向部洗淨工序的處理例> <1.3. Processing example of the facing part washing process>

圖7係第一實施形態的對向部洗淨工序(步驟ST6)中的各個處理的時序圖。以下詳細地說明用以洗淨對向部5之對向部洗淨工序。此外，對向部洗淨工序係在對向部5位於圖3所示的洗淨位置L3且噴嘴74位於圖1中以二點鏈線所示的處理位置的狀態下執行。 FIG. 7 is a timing chart of each process in the facing part washing step (step ST6) of the first embodiment. Hereinafter, the step of washing the facing portion 5 for washing the facing portion 5 will be described in detail. In addition, the facing portion washing step is performed in a state where the facing portion 5 is located at the washing position L3 shown in FIG. 3 and the nozzle 74 is located at the processing position shown by a two-dot chain line in FIG. 1.

首先，從時刻t1開始清洗液供給工序101以及液膜形成工序102。所謂清洗液供給工序101係指用以對基板9的上表面91供給清洗液之工序。在清洗液供給工序101中，從開口712對基板9的上表面91供給清洗液。此外，所謂 液膜形成工序102係指下述工序：藉由自轉馬達33使被自轉夾具31保持的基板9以水平姿勢旋轉，藉此於基板9的上表面91形成在清洗液供給工序101中所供給的清洗液的液膜。 First, the cleaning liquid supply step 101 and the liquid film forming step 102 are started from time t1. The cleaning liquid supply step 101 is a step for supplying a cleaning liquid to the upper surface 91 of the substrate 9. In the cleaning liquid supply step 101, a cleaning liquid is supplied from the opening 712 to the upper surface 91 of the substrate 9. In addition, the so-called The liquid film forming step 102 refers to a step in which the substrate 9 held by the rotation jig 31 is rotated in a horizontal posture by the rotation motor 33, thereby forming the upper surface 91 of the substrate 9 formed in the cleaning liquid supply step 101. Liquid film of cleaning solution.

此外，清洗液供給工序101中的清洗液的供給亦可與清洗處理(步驟ST5)同樣地從噴嘴73的開口732進行。在此情形中，亦可在開始對向部洗淨工序(步驟ST6)的清洗液供給工序之時刻t1以後繼續進行清洗處理(步驟ST5)中所開始之從開口732噴出清洗液。當然，亦可在清洗處理(步驟ST5)中停止從開口732噴出清洗液，之後在對向部洗淨工序(步驟ST6)的清洗液供給工序101再次開始從開口732噴出清洗液。 The supply of the cleaning liquid in the cleaning liquid supply step 101 may be performed from the opening 732 of the nozzle 73 in the same manner as in the cleaning process (step ST5). In this case, the cleaning liquid may be ejected from the opening 732 after the time t1 when the cleaning liquid supply step of the facing part washing step (step ST6) is started, and the cleaning processing (step ST5) is started. Of course, it is also possible to stop spraying the cleaning liquid from the opening 732 in the cleaning process (step ST5), and then to start spraying the cleaning liquid from the opening 732 again in the cleaning liquid supply step 101 of the facing part cleaning step (step ST6).

液膜形成工序102中的基板9的旋轉速度係例如為10rpm，且比基板液體處理工序(步驟ST2至步驟ST5、步驟ST7至步驟ST10)中的基板的旋轉速度(在上述例子中為300rpm至1500rpm)還低速。如此，在液膜形成工序102中以比基板液體處理工序還低速使基板9旋轉，藉此能於基板9的上表面91形成厚的清洗液的液膜。此外，此時所形成的清洗液的液膜的平均厚度係例如為1mm至2mm。 The rotation speed of the substrate 9 in the liquid film forming step 102 is, for example, 10 rpm, and is higher than the rotation speed of the substrate in the substrate liquid processing step (step ST2 to step ST5, step ST7 to step ST10) (in the above example, 300 rpm to 1500 rpm) and low speed. As described above, in the liquid film forming step 102, the substrate 9 is rotated at a lower speed than the substrate liquid processing step, whereby a thick liquid film of the cleaning liquid can be formed on the upper surface 91 of the substrate 9. The average thickness of the liquid film of the cleaning liquid formed at this time is, for example, 1 mm to 2 mm.

之後，從時刻t2開始洗淨液供給工序103以及第一對向部旋轉工序104。所謂洗淨液供給工序103係指在基板9 的上表面91形成有清洗液的液膜的狀態下對對向部5的下表面513供給洗淨液(例如與清洗液相同的純水)之工序。 Thereafter, the cleaning liquid supply step 103 and the first facing portion rotation step 104 are started from time t2. The cleaning liquid supply step 103 refers to the step of A step of supplying a cleaning liquid (for example, pure water similar to the cleaning liquid) to the lower surface 513 of the facing portion 5 in a state where a liquid film of the cleaning liquid is formed on the upper surface 91.

如此，由於在洗淨液供給工序103中形成有清洗液的液膜的狀態下對對向部5的下表面513供給洗淨液，因此即使洗淨液以及/或者微粒等異物從對向部5的下表面513落下，洗淨液以及/或者微粒等異物亦不會附著至基板9的上表面91而是被液膜沖流至基板9的外側。因此，能降低基板9被污染的風險並能在基板處理的過程中洗淨對向部5。 As described above, since the cleaning liquid is supplied to the lower surface 513 of the opposing portion 5 in a state where a liquid film of the cleaning liquid is formed in the cleaning liquid supply step 103, even if the foreign matter such as the cleaning liquid and / or particles passes from the opposing portion The lower surface 513 of 5 drops, and foreign matters such as cleaning liquid and / or particles do not adhere to the upper surface 91 of the substrate 9 but are rushed to the outside of the substrate 9 by the liquid film. Therefore, the risk of contamination of the substrate 9 can be reduced, and the facing portion 5 can be cleaned during substrate processing.

此外，在將下表面513作成親水面之情形中，能減少洗淨液供給工序103中洗淨液從對向部5的下表面513落下。此外，藉由減少洗淨液的落下，能減少形成於基板9上的液膜的崩壞。藉由這些作用，能降低基板9被污染的風險。 In addition, when the lower surface 513 is made into a hydrophilic surface, it is possible to reduce the drop of the cleaning liquid from the lower surface 513 of the facing portion 5 in the cleaning liquid supply step 103. In addition, by reducing the fall of the cleaning liquid, the collapse of the liquid film formed on the substrate 9 can be reduced. By these effects, the risk of contamination of the substrate 9 can be reduced.

此外，在液膜形成工序102中，為了形成較厚的清洗液的液膜，亦可使清洗液的流量增加。例如，亦可將在液膜形成工序102中供給至基板9的清洗液的供給量設定成比步驟ST3中的清洗液的供給量還多。此外，亦可將液膜形成工序102的洗淨液供給工序103中針對基板9的清洗液的供給量設定成比洗淨液供給工序103之前或者之後的清洗液的供給量還多。在此情形中，由於能在洗淨液供給 工序103中形成厚的液膜，因此能有效地抑制從對向部5的下表面513落下的洗淨液中的微粒附著至基板9。 In addition, in the liquid film forming step 102, in order to form a thick liquid film of the cleaning liquid, the flow rate of the cleaning liquid may be increased. For example, the supply amount of the cleaning liquid supplied to the substrate 9 in the liquid film forming step 102 may be set to be larger than the supply amount of the cleaning liquid in step ST3. In addition, the supply amount of the cleaning liquid for the substrate 9 in the cleaning liquid supply step 103 of the liquid film forming step 102 may be set to be larger than the supply amount of the cleaning liquid before or after the cleaning liquid supply step 103. In this case, because the cleaning solution can be supplied Since a thick liquid film is formed in step 103, it is possible to effectively prevent particles in the cleaning liquid dropped from the lower surface 513 of the facing portion 5 from adhering to the substrate 9.

此外，第一對向部旋轉工序104係用以藉由本體旋轉部615使被保持旋轉機構61保持的對向部5以水平姿勢旋轉之工序。第一對向部旋轉工序104係與洗淨液供給工序103並行地進行，在第一對向部旋轉工序104中係以與液膜形成工序102中的基板9的旋轉速度相同的旋轉速度(例如10rpm)使對向部5旋轉。此外，在本例中，雖然在第一對向部旋轉工序104中將對向部5的旋轉速度設定成與基板9的旋轉速度相同，但亦可設定成不同。例如，亦可將對向部5的旋轉速度設定成比基板9的旋轉速度還快的旋轉速度(例如100rpm)或者還慢的旋轉速度。 The first facing portion rotation step 104 is a step for rotating the facing portion 5 held by the holding and rotating mechanism 61 in a horizontal posture by the body rotating portion 615. The first facing portion rotation step 104 is performed in parallel with the cleaning liquid supply step 103, and the first facing portion rotation step 104 is performed at the same rotation speed as the rotation speed of the substrate 9 in the liquid film forming step 102 ( For example, 10 rpm) rotates the facing portion 5. In this example, although the rotation speed of the facing portion 5 is set to be the same as the rotation speed of the substrate 9 in the first facing portion rotation step 104, it may be set to be different. For example, the rotation speed of the facing portion 5 may be set to a rotation speed faster than the rotation speed of the substrate 9 (for example, 100 rpm) or a slower rotation speed.

如此，旋轉屬於洗淨對象之對向部5，藉此能在洗淨液供給工序103中容易地洗淨對向部5的下表面513的整體。此外，由於對向部5的旋轉速度係與基板9的旋轉速度同樣為低速，因此已被供給至對向部5的下表面513的洗淨液不易濺起至下方。藉此，能降低位於對向部5的下方之基板9被污染的風險。 In this way, by rotating the facing portion 5 belonging to the cleaning target, the entire lower surface 513 of the facing portion 5 can be easily washed in the cleaning liquid supply step 103. In addition, since the rotation speed of the facing portion 5 is a low speed similar to the rotation speed of the substrate 9, the cleaning liquid that has been supplied to the lower surface 513 of the facing portion 5 is unlikely to splash down. Thereby, the risk of contamination of the substrate 9 located below the opposing portion 5 can be reduced.

此外，對向部5的下表面513係比被自轉夾具31保持的基板9還廣。亦即，下表面513的直徑係比基板9的直徑還大。如此，將對向部5的下表面513作成比基板9還 廣，藉此能縮小從對向部5落下至基板9之洗淨液的每單位面積的落下量。亦即，能縮小從下表面513朝基板9落下的液滴的大小。藉此，能減少從下表面513落下的洗淨液導致清洗液的液膜的崩壞。因此，能有效地減少落下的洗淨液造成基板的污染。 The lower surface 513 of the facing portion 5 is wider than the substrate 9 held by the rotation jig 31. That is, the diameter of the lower surface 513 is larger than the diameter of the substrate 9. In this way, the lower surface 513 of the facing portion 5 is made larger than the substrate 9 Therefore, the amount of the cleaning liquid dropped from the facing portion 5 to the substrate 9 per unit area can be reduced. That is, it is possible to reduce the size of the liquid droplets that have fallen from the lower surface 513 toward the substrate 9. This can reduce the collapse of the liquid film of the cleaning liquid caused by the cleaning liquid dropped from the lower surface 513. Therefore, it is possible to effectively reduce the contamination of the substrate caused by the falling cleaning liquid.

此外，由於將對向部5的下表面513作成比基板9還廣，因此能在洗淨液供給工序103中使處理液從旋轉中的對向部5中之比基板9還外側的部分落下。藉此，能減少落下至基板9的洗淨液的量。因此，能有效地降低落下的洗淨液導致基板的污染。 In addition, since the lower surface 513 of the facing portion 5 is wider than the substrate 9, the processing liquid can be dropped from the portion of the facing portion 5 that is rotating outside the substrate 9 in the cleaning liquid supply step 103. . Thereby, the amount of the cleaning liquid dropped on the substrate 9 can be reduced. Therefore, it is possible to effectively reduce the contamination of the substrate caused by the falling cleaning liquid.

對向部5a的下表面513係比基板9還廣。因此，能在總括地覆蓋基板9的前表面的狀態下對基板9進行乾燥處理。因此，能均勻地處理基板。 The lower surface 513 of the facing portion 5 a is wider than the substrate 9. Therefore, the substrate 9 can be dried in a state in which the front surface of the substrate 9 is collectively covered. Therefore, the substrate can be processed uniformly.

之後，當變成時刻t3時，結束洗淨液供給工序103以及第一對向部旋轉工序104。在本實施形態中，在時刻t2至時刻t3的期間中並行地進行清洗液供給工序101與洗淨液供給工序103。因此，即使在洗淨液供給工序103中洗淨液以及/或者異物從對向部5的下表面513落下，洗淨液以及/或者異物亦容易被新供給至基板9的上表面91的清洗液沖流至基板9的外側。因此，能進一步降低基板9被污染的風險。 After that, when it is time t3, the washing liquid supply step 103 and the first facing portion rotation step 104 are ended. In this embodiment, the cleaning liquid supply step 101 and the cleaning liquid supply step 103 are performed in parallel during a period from time t2 to time t3. Therefore, even if the cleaning liquid and / or foreign matter falls from the lower surface 513 of the facing portion 5 in the cleaning liquid supply step 103, the cleaning liquid and / or foreign matter is easily supplied to the cleaning of the upper surface 91 of the substrate 9 The liquid flows to the outside of the substrate 9. Therefore, the risk of contamination of the substrate 9 can be further reduced.

此外，在本實施形態中，在對向部5配置於比退避位置L1還低且比對向位置L2還高的洗淨位置L3的狀態下進行對向部5的下表面513的洗淨。在此情形中，由於能將下表面513靠近基板9，因此能減少洗淨液從下表面513落下導致基板9上的清洗液的液膜的崩壞。因此，能有效地降低落下的洗淨液導致基板的污染。此外，無須將對向部5配置於洗淨位置L3並進行下表面513的洗淨。例如，亦可在已將對向部5配置於退避位置L1的狀態下從噴嘴74對下表面513供給洗淨液，藉此進行下表面513的洗淨。在此情形中，退避位置L1係變成洗淨位置。 In addition, in the present embodiment, the lower surface 513 of the facing portion 5 is cleaned in a state where the facing portion 5 is disposed at a washing position L3 that is lower than the retracted position L1 and higher than the facing position L2. In this case, since the lower surface 513 can be brought closer to the substrate 9, it is possible to reduce the collapse of the liquid film of the cleaning liquid on the substrate 9 caused by the falling of the cleaning liquid from the lower surface 513. Therefore, it is possible to effectively reduce the contamination of the substrate caused by the falling cleaning liquid. In addition, it is not necessary to arrange the facing portion 5 at the washing position L3 and to clean the lower surface 513. For example, the lower surface 513 may be cleaned by supplying the cleaning liquid from the nozzle 74 to the lower surface 513 in a state where the facing portion 5 is disposed at the retracted position L1. In this case, the retreat position L1 becomes a washing position.

在已將對向部5配置於對向位置L2的狀態下所執行之IPA處理(步驟ST7)、撥水化處理(步驟ST8)或者IPA處理(步驟ST9)係第一基板液體處理工序的例子。此外，在已將對向部5配置於退避位置L1的狀態下所執行之氫氟酸處理(步驟ST2)、清洗處理(步驟ST3)、SC1處理(步驟ST4)或者清洗處理(步驟ST5)係第二基板液體處理工序的例子。 The IPA process (step ST7), the water repellent process (step ST8), or the IPA process (step ST9) performed in the state where the facing unit 5 is disposed at the facing position L2 are examples of the first substrate liquid processing process. . The hydrofluoric acid treatment (step ST2), the cleaning process (step ST3), the SC1 process (step ST4), or the cleaning process (step ST5) performed in a state where the facing portion 5 is disposed at the retreat position L1. An example of a second substrate liquid processing step.

在時刻t3至時刻t4中進行對向部升降工序105。在對向部升降工序105中，升降機構62係以對向部5的下表面513的高度變得比圍繞基板9的周圍之罩部4的上端還高且比基板液體處理工序中用以對基板9的上表面91供給各種液體之各個噴嘴73的各個開口還低之方式使對向部5 升降。 The facing portion elevating step 105 is performed from time t3 to time t4. In the opposing portion elevating step 105, the elevating mechanism 62 is configured such that the height of the lower surface 513 of the opposing portion 5 becomes higher than the upper end of the cover portion 4 surrounding the periphery of the substrate 9 and is used to align the substrate liquid processing step. The upper surface 91 of the substrate 9 is provided with the respective openings of the respective nozzles 73 for supplying various liquids so that the facing portion 5 is low. Lifting.

在調整對向部5的高度後，在時刻t4至時刻t5中，進行第二對向部旋轉工序106。第二對向部旋轉工序106係在洗淨液供給工序103以及第一對向部旋轉工序104之後進行，且為用以使對向部5以比液膜形成工序102中的基板9的旋轉速度還高速(例如1500rpm)旋轉之工序。如此，以高速使對向部5旋轉，藉此能藉由離心力使附著至對向部5的下表面513的洗淨液以及/或者可能殘留於對向部5的下表面513的異物朝周圍飛散而使對向部5乾燥。 After the height of the facing portion 5 is adjusted, the second facing portion rotation step 106 is performed from time t4 to time t5. The second opposing portion rotation step 106 is performed after the cleaning liquid supply step 103 and the first opposing portion rotation step 104, and is used to rotate the opposing portion 5 by the substrate 9 in the liquid film formation step 102. The process of rotating at a high speed (for example, 1500 rpm). In this way, by rotating the facing portion 5 at a high speed, the cleaning liquid adhering to the lower surface 513 of the facing portion 5 and / or foreign matter that may remain on the lower surface 513 of the facing portion 5 can be turned around by centrifugal force. Scatters and causes the facing portion 5 to dry.

此外，在本實施形態中，在已在對向部升降工序105中調整對向部5的下表面513的高度的狀態下進行第二對向部旋轉工序106。在第二對向部旋轉工序106中，由於對向部5的下表面513的高度位於比罩部4的上端還高的位置，因此能抑制因為離心力從對向部5的下表面513飛散至側方的洗淨液以及/或者異物碰撞至罩部4的內壁並濺起至基板9的上表面91。此外，在第二對向部旋轉工序106中，由於對向部5的下表面513的高度位於比噴嘴73的各個開口還低的位置，因此能抑制因為離心力從對向部5的下表面513飛散至側方的洗淨液以及/或者異物附著至各個噴嘴73的各個開口附近(從而能抑制各個噴嘴73使用時附著物落下至基板9)。 In the present embodiment, the second facing portion rotation step 106 is performed while the height of the lower surface 513 of the facing portion 5 is adjusted in the facing portion elevating step 105. In the second opposing portion rotation step 106, since the height of the lower surface 513 of the opposing portion 5 is higher than the upper end of the cover portion 4, it is possible to suppress the centrifugal force from being scattered from the lower surface 513 of the opposing portion 5 to The lateral cleaning liquid and / or foreign matter hit the inner wall of the cover portion 4 and splashed onto the upper surface 91 of the substrate 9. In addition, in the second facing portion rotation step 106, since the height of the lower surface 513 of the facing portion 5 is lower than the respective openings of the nozzles 73, it is possible to suppress the centrifugal force from falling from the lower surface 513 of the facing portion 5. The cleaning liquid and / or foreign matter scattered to the side are attached to the vicinity of the respective openings of the respective nozzles 73 (thereby preventing the attached matter from falling onto the substrate 9 when the respective nozzles 73 are used).

接著，在結束第二對向部旋轉工序106之時刻t5中亦結束清洗液供給工序101以及液膜形成工序102，且亦結束用以洗淨對向部5之對向部洗淨工序(步驟ST6)。 Next, at the time t5 when the second facing portion rotation step 106 is finished, the cleaning liquid supply step 101 and the liquid film forming step 102 are also ended, and the facing portion washing step (step of washing the facing portion 5) is also finished. ST6).

此外，在本實施形態中，對向部洗淨工序(步驟ST6)係在液體處理中之用以將基板9的上表面91予以撥水化之撥水化處理(步驟ST8)之前進行。因此，能防止撥水化處理後殘留於基板9的上表面91的撥水化劑與從對向部5的下表面513落下的洗淨液反應(例如殘留於基板9的上表面91的撥水化劑與從對向部5的下表面513落下的純水進行聚合反應而使撥水化劑高分子化)，而能降低在基板9的上表面91產生異物之風險。 In addition, in this embodiment, the facing part cleaning step (step ST6) is performed before the water repellent treatment (step ST8) for rehydrating the upper surface 91 of the substrate 9 in the liquid treatment. Therefore, it is possible to prevent the water-repellent agent remaining on the upper surface 91 of the substrate 9 after the water-repellent treatment from reacting with the cleaning liquid dropped from the lower surface 513 of the facing portion 5 (for example, the water-repellent remaining on the upper surface 91 of the substrate 9). The hydrating agent and the pure water dropped from the lower surface 513 of the facing portion 5 are polymerized to polymerize the water-repellent agent), thereby reducing the risk of foreign matter being generated on the upper surface 91 of the substrate 9.

此外，在本實施形態中，於液體處理包含有使用了有機溶劑的處理(步驟ST7、ST9)，且對向部5係耐有機溶劑性的材質。由於對向部5為耐有機溶劑性的材質，因此即使對基板9進行了使用了有機溶劑的液體處理，對向部5亦不易消耗。當採用此種材質時，雖然對向部5的表面變成疏水性且被供給至對向部5的下表面513的洗淨液容易濺起至下方，但由於在清洗液供給工序101中於基板9的上表面91形成有液膜，因此能降低基板9被污染的風險。 In addition, in the present embodiment, the liquid treatment includes a treatment using an organic solvent (steps ST7 and ST9), and the facing portion 5 is made of an organic solvent-resistant material. Since the facing portion 5 is made of an organic solvent-resistant material, the facing portion 5 is difficult to consume even if the substrate 9 is subjected to a liquid treatment using an organic solvent. When such a material is used, although the surface of the facing portion 5 becomes hydrophobic and the cleaning liquid supplied to the lower surface 513 of the facing portion 5 is easily splashed to the lower side, it is because the The upper surface 91 of 9 is formed with a liquid film, so the risk of contamination of the substrate 9 can be reduced.

圖8係用以顯示比較例中於對向部洗淨工序(步驟ST6)後的基板9的上表面91的髒污之俯視圖。圖9係用以顯示 在第一實施形態中於對向部洗淨工序(步驟ST6)後的基板9的上表面91的髒污之俯視圖。此外，在圖8以及圖9中，以多數個黑圓圈顯示附著至上表面91的微粒等異物。 FIG. 8 is a plan view showing the dirt on the upper surface 91 of the substrate 9 after the facing portion cleaning step (step ST6) in the comparative example. Figure 9 is used to display In the first embodiment, a top view of the dirt on the upper surface 91 of the substrate 9 after the facing portion cleaning step (step ST6). In addition, in FIG. 8 and FIG. 9, foreign matter such as particles attached to the upper surface 91 is shown by a plurality of black circles.

該比較例係除了液膜形成工序102中的基板9的旋轉速度與基板液體處理工序中的基板9的旋轉速度相同程度(例如1000rpm)之外皆與本實施形態相同。比較圖8以及圖9可知，在比較例中，於基板9的上表面91殘留許多異物，且這些異物集中於基板9的外周側。相對於此，在本實施形態中，基板9的上表面91很少殘留異物，且這些異物分散於基板9的上表面91的整面。因此，與比較例相比，在本實施形態中能期待產能的提升。認為此種於異物的附著情形產生差異之原因乃是由於液膜形成工序102中的基板9的旋轉速度為低速且旋轉的離心力變小從而於基板9的上表面91形成有相對性較厚的液膜之故。 This comparative example is the same as this embodiment except that the rotation speed of the substrate 9 in the liquid film forming step 102 is the same as the rotation speed of the substrate 9 in the substrate liquid processing step (for example, 1000 rpm). Comparing FIG. 8 and FIG. 9, in the comparative example, many foreign matters remain on the upper surface 91 of the substrate 9, and these foreign matters are concentrated on the outer peripheral side of the substrate 9. On the other hand, in the present embodiment, foreign matters are rarely left on the upper surface 91 of the substrate 9, and these foreign matters are dispersed over the entire surface of the upper surface 91 of the substrate 9. Therefore, compared with the comparative example, the improvement of the production capacity can be expected in this embodiment. It is thought that the reason for such a difference in the adhesion of foreign matter is because the rotation speed of the substrate 9 in the liquid film forming step 102 is low and the rotating centrifugal force is reduced, so that a relatively thicker surface is formed on the upper surface 91 of the substrate 9 The reason for the liquid film.

<2.第二實施形態> <2. Second Embodiment>

說明第二實施形態。此外，在以下的說明中，會有針對具有與已經說明過的構件相同的功能之構件附上相同的元件符號或者附上了英文字母的元件符號並省略詳細的說明之情形。 A second embodiment will be described. In addition, in the following description, a component having the same function as a component already described may be attached with the same element symbol or an element symbol with an English letter, and a detailed description may be omitted.

在第一實施形態的基板處理裝置1中，作成藉由本體旋轉部615使對向部5主動地旋轉之構成。相對於此，在 第二實施形態的基板處理裝置1a中，對向部5a係作成被動地旋轉之構成。以下，說明基板處理裝置1a。 In the substrate processing apparatus 1 according to the first embodiment, a configuration is adopted in which the facing portion 5 is actively rotated by the body rotation portion 615. In contrast, in In the substrate processing apparatus 1a of the second embodiment, the facing portion 5a is configured to rotate passively. Hereinafter, the substrate processing apparatus 1a will be described.

圖10以及圖11係用以顯示第二實施形態的基板處理裝置1a之概略側視圖。此外，圖10係顯示對向部5a位於退避位置L1的狀態，圖11係顯示對向部5a位於對向位置L2的狀態。 10 and 11 are schematic side views showing a substrate processing apparatus 1a according to the second embodiment. In addition, FIG. 10 shows a state where the facing portion 5a is located at the retreated position L1, and FIG. 11 shows a state where the facing portion 5a is located at the facing position L2.

基板處理裝置1a係具備有：噴嘴71，係用以對被自轉夾具31保持的基板9的上表面供給處理液。關於噴嘴71的構成係容後述。 The substrate processing apparatus 1 a is provided with a nozzle 71 for supplying a processing liquid to the upper surface of the substrate 9 held by the rotation jig 31. The configuration of the nozzle 71 will be described later.

於自轉基座32的保持面32a的周緣部立設有複數個卡合部36。複數個卡合部36係與複數個夾具銷35同樣地沿著與圓形的基板9的外周緣對應之圓周上隔著均等的間隔(例如若為四個卡合部36則為90°間隔)配置。此外，複數個卡合部36係配置於比複數個夾具銷35還徑方向外側方向。關於複數個卡合部36的功能係容後述。 A plurality of engaging portions 36 are erected on the peripheral edge portion of the holding surface 32 a of the rotation base 32. The plurality of engaging portions 36 are spaced at equal intervals along the circumference corresponding to the outer periphery of the circular substrate 9 in the same manner as the plurality of clamp pins 35 (for example, 90 degrees in the case of four engaging portions 36). ) Configuration. In addition, the plurality of engaging portions 36 are arranged in an outer diameter direction than the plurality of clamp pins 35. The function of the plurality of engaging portions 36 will be described later.

對向部5a係具備有本體部51a、被保持部52以及卡合部53。本體部51a係具備有本體部51、頂蓋部511a以及側壁部512。於頂蓋部511a的中央部設置有開口54。側壁部512係將中心軸J1作為中心之略圓筒狀的構件，並從頂蓋部511a的外周部朝下方擴展。 The facing portion 5 a includes a main body portion 51 a, a held portion 52 and an engaging portion 53. The main body portion 51 a includes a main body portion 51, a top cover portion 511 a, and a side wall portion 512. An opening 54 is provided in a central portion of the top cover portion 511a. The side wall portion 512 is a substantially cylindrical member having the center axis J1 as the center, and is extended downward from the outer peripheral portion of the top cover portion 511a.

複數個卡合部53係以中心軸J1作為中心略等角度間隔地於周方向配置於頂蓋部511的下表面513的外周部。複數個卡合部53係配置於側壁部512的徑方向內側。 The plurality of engaging portions 53 are arranged on the outer peripheral portion of the lower surface 513 of the top cover portion 511 in the circumferential direction at approximately equal angular intervals with the central axis J1 as the center. The plurality of engaging portions 53 are arranged on the inner side in the radial direction of the side wall portion 512.

被保持部52係連接至本體部51的上表面。被保持部52係具備有筒狀部521以及凸緣(flange)部522。筒狀部521係從本體部51的開口54的周圍朝上方突出之略筒狀的構件。筒狀部521係例如為將中心軸J1作為中心之略圓筒狀。凸緣部522係從筒狀部521的上端部朝徑方向外側方向環狀地擴展。凸緣部522係例如為將中心軸J1作為中心之略圓環板狀。 The held portion 52 is connected to the upper surface of the body portion 51. The held portion 52 is provided with a cylindrical portion 521 and a flange portion 522. The cylindrical portion 521 is a slightly cylindrical member protruding upward from the periphery of the opening 54 of the main body portion 51. The cylindrical portion 521 is, for example, a substantially cylindrical shape with the central axis J1 as the center. The flange portion 522 is annularly expanded from the upper end portion of the cylindrical portion 521 to the outer side in the radial direction. The flange portion 522 is, for example, a substantially annular plate shape with the center axis J1 as the center.

對向部移動機構6的保持旋轉機構61a係保持被保持部52。保持旋轉機構61a係具備有保持部本體611a、臂612、凸緣支撐部613以及支撐部連接部614。 The holding and rotating mechanism 61 a of the facing portion moving mechanism 6 holds the held portion 52. The holding and rotating mechanism 61 a includes a holding part body 611 a, an arm 612, a flange support part 613, and a support part connection part 614.

本持部本體611a係例如為將中心軸J1作為中心之略圓板狀。保持部本體611係覆蓋對向部5的凸緣部522的上方。臂612的一方的端部係連接至保持部本體611a，臂612的另一方的端部係連接至升降機構62。 The holding portion main body 611a is, for example, a slightly circular plate shape with the central axis J1 as the center. The holding portion body 611 covers the flange portion 522 of the facing portion 5 above. One end of the arm 612 is connected to the holding portion body 611 a, and the other end of the arm 612 is connected to the lifting mechanism 62.

噴嘴71係從保持部本體611a的中央部朝下方突出。噴嘴71係以非接觸狀態被插入至筒狀部521。 The nozzle 71 protrudes downward from the center of the holding portion body 611a. The nozzle 71 is inserted into the cylindrical portion 521 in a non-contact state.

凸緣支撐部613係例如為將中心軸J1作為中心之略圓環板狀。凸緣支撐部613係位於凸緣部522的下方。凸緣支撐部613的內徑係比對向部5的凸緣部522的外徑還小。凸緣支撐部613的外徑係比對向部5的凸緣部522的外徑還大。支撐部連接部614係例如為將中心軸J1作為中心之略圓筒狀。支撐部連接部614係在凸緣部522的周圍連接凸緣支撐部613與保持部本體611a。在保持旋轉機構61a中，保持部本體611a係於上下方向與凸緣部522的上表面對向之保持部上部，凸緣支撐部613係於上下方向與凸緣部522的下表面對向之保持部下部。 The flange support portion 613 has, for example, a substantially annular plate shape with the central axis J1 as the center. The flange support portion 613 is located below the flange portion 522. The inner diameter of the flange support portion 613 is smaller than the outer diameter of the flange portion 522 of the facing portion 5. The outer diameter of the flange support portion 613 is larger than the outer diameter of the flange portion 522 of the facing portion 5. The support portion connecting portion 614 is, for example, a substantially cylindrical shape with the central axis J1 as the center. The supporting portion connecting portion 614 connects the flange supporting portion 613 and the holding portion body 611 a around the flange portion 522. In the holding and rotating mechanism 61a, the holding portion body 611a is located at the upper portion of the holding portion that faces the upper surface of the flange portion 522 in the up-down direction, and the flange supporting portion 613 faces the bottom surface of the flange portion 522 in the up-down direction. Lower part of the holding part.

在對向部5a位於圖10所示的位置的狀態下，凸緣支撐部613係從下側接觸至對向部5a的凸緣部522的外周部並支撐凸緣部522。換言之，對向部5a的凸緣部522係被對向部移動機構6的保持旋轉機構61a保持。藉此，在圖10所示的狀態下，對向部5a係在基板9以及自轉夾具31的上方被保持旋轉機構61a垂吊。在以下的說明中，將圖10所示的對向部5a的上下方向的位置稱為「退避位置L1a」。所謂退避位置L1a係指對向部5a被對向部移動機構6保持並從自轉夾具31離開至上方之位置。 In a state where the facing portion 5 a is at the position shown in FIG. 10, the flange support portion 613 contacts the outer peripheral portion of the flange portion 522 of the facing portion 5 a from the lower side and supports the flange portion 522. In other words, the flange portion 522 of the facing portion 5 a is held by the holding and rotating mechanism 61 a of the facing portion moving mechanism 6. Thereby, in the state shown in FIG. 10, the opposing part 5a is hung by the holding rotation mechanism 61a above the base plate 9 and the rotation jig 31. In the following description, the up-down position of the facing portion 5 a shown in FIG. 10 will be referred to as a “retracted position L1 a”. The retracted position L1a refers to a position where the opposing portion 5a is held by the opposing portion moving mechanism 6 and is separated from the rotation jig 31 to the upper position.

於凸緣支撐部613設置有用以限制對向部5a的位置偏移(亦即對向部5a的移動以及旋轉)之移動限制部616。在 圖10所示的例子中，移動限制部616係從凸緣支撐部613的上表面朝上方突出之突起部。移動限制部616係被插入至設置於凸緣部522的孔部，藉此抑制對向部5a的位置偏移。 The flange support portion 613 is provided with a movement restricting portion 616 for restricting the positional deviation of the opposing portion 5a (that is, the movement and rotation of the opposing portion 5a). in In the example shown in FIG. 10, the movement restricting portion 616 is a protruding portion protruding upward from the upper surface of the flange support portion 613. The movement restriction portion 616 is inserted into a hole portion provided in the flange portion 522, thereby suppressing the positional deviation of the facing portion 5a.

升降機構62係使對向部5a與保持旋轉機構61a一起於上下方向移動。圖11係用以顯示對向部5a已從圖10所示的退避位置L1a下降的狀態之剖視圖。在以下的說明中，將圖11所示的對向部5a的上下方向的位置稱為「對向位置L2a」。亦即，升降機構62係使對向部5a在退避位置L1a與對向位置L2a之間相對於自轉夾具31相對性地於上下方向移動。對向位置L2a係比退避位置L1a還下方的位置。換言之，所謂對向位置L2a係指對向部5a在上下方向中比退避位置L1a還接近自轉夾具31之位置。 The elevating mechanism 62 moves the facing portion 5a in the vertical direction together with the holding and rotating mechanism 61a. FIG. 11 is a cross-sectional view showing a state where the facing portion 5a has descended from the retracted position L1a shown in FIG. 10. In the following description, the position in the up-down direction of the facing portion 5 a shown in FIG. 11 is referred to as a “facing position L2 a”. That is, the raising and lowering mechanism 62 moves the opposing portion 5a relative to the rotation jig 31 in the up-down direction relatively between the retracted position L1a and the opposing position L2a. The facing position L2a is a position lower than the retreat position L1a. In other words, the opposing position L2a refers to a position where the opposing portion 5a is closer to the rotation jig 31 than the retreat position L1a in the vertical direction.

在對向部5a位於對向位置L2a的狀態下對向部5a的複數個卡合部53係分別與自轉夾具31的複數個卡合部36卡合。複數個卡合部53係被複數個卡合部36從下方支撐。換言之，複數個卡合部36係用以支撐對向部5a之對向構件支撐部。例如，卡合部36係與上下方向略平行的銷，且卡合部36的上端部係嵌合至朝向上方地形成於卡合部53的下端部的凹部。此外，對向部5a的凸緣部522係從保持旋轉機構61的凸緣支撐部613離開至上方。藉此，對向部5a係在對向位置L2a中被自轉夾具31保持並從對向部移 動機構6離開。 In a state where the facing portion 5a is located at the facing position L2a, the plurality of engaging portions 53 of the facing portion 5a are engaged with the plurality of engaging portions 36 of the rotation jig 31, respectively. The plurality of engaging portions 53 are supported by the plurality of engaging portions 36 from below. In other words, the plurality of engaging portions 36 are used to support the opposing member supporting portion of the opposing portion 5a. For example, the engaging portion 36 is a pin slightly parallel to the vertical direction, and the upper end portion of the engaging portion 36 is fitted into a recessed portion formed in the lower end portion of the engaging portion 53 so as to face upward. The flange portion 522 of the facing portion 5 a is spaced upward from the flange support portion 613 of the holding and rotating mechanism 61. Thereby, the opposing portion 5a is held by the rotation jig 31 in the opposing position L2a and moved from the opposing portion Moving mechanism 6 leaves.

在對向部5a被自轉夾具31保持的狀態下，對向部5a的側壁部512的下端部係位於比自轉夾具31的自轉基座32的上表面還下方或者位於上下方向中與自轉基座32的上表面相同的位置。當在對向部5a位於對向位置L2a的狀態下驅動自轉馬達33時，對向部5a係與基板9以及自轉夾具31一起旋轉。如此，在對向部5a位於對向位置L2a的狀態下，藉由自轉馬達33的旋轉驅動力使基板9以及對向部5a一體性地繞著中心軸J1旋轉。另一方面，在對向部5a位於退避位置L1a的狀態下，藉由自轉馬達33的旋轉驅動力基板9變得可以繞著中心軸J1旋轉，而對向部5a則無法旋轉。 In a state where the opposing portion 5 a is held by the rotation jig 31, the lower end portion of the side wall portion 512 of the opposing portion 5 a is located below the upper surface of the rotation base 32 of the rotation jig 31 or in a vertical direction with the rotation base. The top surface of 32 is the same position. When the rotation motor 33 is driven in a state where the facing portion 5 a is at the facing position L2 a, the facing portion 5 a rotates together with the substrate 9 and the rotation jig 31. In this manner, in a state where the facing portion 5a is located at the facing position L2a, the substrate 9 and the facing portion 5a are integrally rotated around the central axis J1 by the rotational driving force of the rotation motor 33. On the other hand, in a state where the facing portion 5a is located at the retracted position L1a, the substrate 9 can be rotated about the central axis J1 by the rotation driving force of the rotation motor 33, but the facing portion 5a cannot be rotated.

圖12係從下方觀看第二實施形態的噴嘴71a之仰視圖。於噴嘴71a的下表面設置有複數個開口711至715作為可噴出從省略圖示的複數個處理液供給源所供給的各種處理液之構成。在此，說明可從開口711噴出氫氟酸、可從開口712噴出純水、可從開口713噴出SC1液體(已混合了過氧化氫水以及氨的處理液)、可從開口714噴出IPA、可從開口715噴出撥水化劑(例如矽烷基化劑)之情形。此外，這些僅為一例，亦可構成為可對基板9的上表面91噴出其他的處理液。此外，亦可設置有可噴出從省略圖示的氣體供給源所供給的氣體(例如氮氣)之開口。 Fig. 12 is a bottom view of the nozzle 71a of the second embodiment as viewed from below. A plurality of openings 711 to 715 are provided on the lower surface of the nozzle 71a as a structure capable of ejecting various processing liquids supplied from a plurality of processing liquid supply sources (not shown). Here, it is explained that hydrofluoric acid can be ejected from the opening 711, pure water can be ejected from the opening 712, SC1 liquid (a treatment solution in which hydrogen peroxide water and ammonia have been mixed) can be ejected from the opening 713, IPA can be ejected from the opening 714, A case where a water-repellent agent (for example, a silylating agent) can be sprayed from the opening 715. These are just examples, and other processing liquids may be ejected onto the upper surface 91 of the substrate 9. In addition, an opening capable of ejecting a gas (for example, nitrogen gas) supplied from a gas supply source (not shown) may be provided.

圖13係用以顯示第二實施形態的噴嘴71a的附近之概略剖視圖。如圖13所示，噴嘴71a係將從省略圖示的供給源所供給的洗淨液供給至對向部5a的下表面513。詳細而言，噴嘴71a係具有朝斜上方呈開口之開口716。在如圖11所示在對向部5a位於對向位置L2a的狀態下，如圖13所示般噴嘴71a的開口716係朝向本體部51的頂蓋部511a的下表面513。 FIG. 13 is a schematic cross-sectional view showing the vicinity of the nozzle 71a according to the second embodiment. As shown in FIG. 13, the nozzle 71a supplies the washing liquid supplied from the supply source which is not shown in figure to the lower surface 513 of the opposing part 5a. In detail, the nozzle 71a has an opening 716 which opens diagonally upward. In a state where the facing portion 5 a is at the facing position L2 a as shown in FIG. 11, the opening 716 of the nozzle 71 a faces the lower surface 513 of the top cover portion 511 a of the main body portion 51 as shown in FIG. 13.

<基板處理裝置1a的動作例> <Operation example of the substrate processing apparatus 1a>

以下，參照圖6說明基板處理裝置1a中的處理例。雖然在以下的處理例中說明從噴嘴71a供給使用於基板9的液體處理之各種處理液之態樣，但亦可為從噴嘴73供給使用於基板9的液體處理之一部分的處理液之態樣。 Hereinafter, a processing example in the substrate processing apparatus 1 a will be described with reference to FIG. 6. In the following processing examples, various processing liquids for liquid processing for the substrate 9 are supplied from the nozzle 71a, but it is also possible for the processing liquids to be supplied from the nozzle 73 as part of the liquid processing for the substrate 9 .

首先，在對向部5a位於退避位置L1a的狀態下，藉由外部的搬運機器人將基板9搬入至腔室11內並載置於自轉基座32的夾具銷35上。結果，該基板9係被夾具銷35從下側支撐(步驟ST1)。 First, in a state where the facing portion 5 a is located at the retreat position L1 a, the substrate 9 is carried into the chamber 11 by an external transfer robot and is placed on the clamp pin 35 of the rotation base 32. As a result, the substrate 9 is supported from the lower side by the clamp pin 35 (step ST1).

當基板9被搬入時，升降機構62係使對向部5a從退避位置L1a下降至對向位置L2a。藉此，形成有被自轉基座32的保持面32a、頂蓋部511a的下表面513以及側壁部512的內周面圍繞的空間。接著，藉由自轉馬達33使基板 9開始旋轉。 When the substrate 9 is carried in, the lifting mechanism 62 lowers the facing portion 5a from the retreat position L1a to the facing position L2a. Thereby, a space surrounded by the holding surface 32a of the rotation base 32, the lower surface 513 of the top cover portion 511a, and the inner peripheral surface of the side wall portion 512 is formed. Then, the substrate is rotated by the rotation motor 33. 9 starts spinning.

在此狀態下，對基板9的上表面91執行使用了各種處理液之液體處理。首先，執行用以從噴嘴71a的開口711對基板9的上表面91供給氫氟酸之氫氟酸處理(步驟ST2)。在氫氟酸處理中，從設置於噴嘴71a的下表面的開口711對旋轉中的基板9的上表面91連續性地供給氫氟酸。已著液至上表面91的氫氟酸係藉由該基板9的旋轉而朝基板9的外周部擴展，並在上表面91的整體進行氫氟酸處理。此期間係例如為30秒。此外，此期間中的基板9以及對向部5的旋轉速度係例如為800rpm至1000rpm。 In this state, liquid processing using various processing liquids is performed on the upper surface 91 of the substrate 9. First, a hydrofluoric acid process for supplying hydrofluoric acid to the upper surface 91 of the substrate 9 from the opening 711 of the nozzle 71a is performed (step ST2). In the hydrofluoric acid treatment, hydrofluoric acid is continuously supplied to the upper surface 91 of the rotating substrate 9 from the opening 711 provided on the lower surface of the nozzle 71a. The hydrofluoric acid that has been deposited on the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and is subjected to hydrofluoric acid treatment on the entire upper surface 91. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, 800 rpm to 1000 rpm.

停止從開口711噴出氫氟酸後，開始從開口712噴出清洗液(步驟ST3)。於清洗處理時，從設置於噴嘴71a的下表面的開口712對旋轉中的基板9的上表面91連續性地供給清洗液。已著液至上表面91的清洗液係藉由該基板9的旋轉而朝基板9的外周部擴展，並與殘存於上表面91上的氫氟酸一起從基板9的外周緣朝徑方向外側方向飛散。從基板9飛散的氫氟酸以及清洗液係被第一防護罩41的內壁接住並經由排出埠44被廢棄。藉此，實質性地與基板9的上表面91的清洗處理一起進行第一防護罩41的洗淨。此期間係例如為30秒。此外，此期間中的基板9以及對向部5的旋轉速度係例如為1200rpm。 After the discharge of hydrofluoric acid from the opening 711 is stopped, the cleaning liquid is started to be discharged from the opening 712 (step ST3). During the cleaning process, the cleaning liquid is continuously supplied to the upper surface 91 of the substrate 9 in rotation from the opening 712 provided on the lower surface of the nozzle 71a. The cleaning liquid that has been applied to the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and along with the hydrofluoric acid remaining on the upper surface 91, moves outward from the outer peripheral edge of the substrate 9 in the radial direction. Flying away. The hydrofluoric acid and the cleaning liquid scattered from the substrate 9 are received by the inner wall of the first protective cover 41 and discarded through the discharge port 44. Thereby, the cleaning of the first protective cover 41 is substantially performed together with the cleaning process of the upper surface 91 of the substrate 9. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, 1200 rpm.

停止從開口712噴出清洗液後，開始從開口713噴出SC1液體(步驟ST4)。在SC1處理時，從設置於噴嘴71a的下表面之開口713對旋轉中的基板9的上表面91連續性地供給SC1液體。已著液至上表面91的SC1液體係藉由該基板9的旋轉而朝基板9的外周部擴展，並在上表面91的整體進行SC1處理。此期間係例如為30秒。此外，此期間中的基板9以及對向部5的旋轉速度係例如為800rpm。從基板9飛散的SC1液體係被第二防護罩42的內壁接住並從排出埠44被廢棄。 After the discharge of the cleaning liquid from the opening 712 is stopped, the SC1 liquid is started to be discharged from the opening 713 (step ST4). During the SC1 process, the SC1 liquid is continuously supplied to the upper surface 91 of the rotating substrate 9 from the opening 713 provided on the lower surface of the nozzle 71a. The SC1 liquid system that has been deposited on the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and performs SC1 treatment on the entire upper surface 91. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, 800 rpm. The SC1 liquid system scattered from the substrate 9 is caught by the inner wall of the second protective cover 42 and is discarded from the discharge port 44.

停止從開口713噴出SC1液體後，開始從開口712噴出清洗液(步驟ST5)。於清洗處理時，從設置於噴嘴71a的下表面之開口712對旋轉中的基板9的上表面91連續性地供給清洗液。已著液至上表面91的清洗液係藉由該基板9的旋轉而朝基板9的外周部擴展，並與殘存於上表面91上的SC1液體一起從基板9的外周緣朝徑方向外側方向飛散。從基板9飛散的SC1液體以及清洗液係被第一防護罩41的內壁接住並經由排出埠44被廢棄。藉此，實質性地與基板9的上表面91的清洗處理一起進行第一防護罩41的洗淨。此期間係例如為30秒。此外，此期間中的基板9以及對向部5的旋轉速度係例如為1200rpm。 After the discharge of the SC1 liquid from the opening 713 is stopped, the cleaning liquid is started to be discharged from the opening 712 (step ST5). During the cleaning process, the cleaning liquid is continuously supplied to the upper surface 91 of the substrate 9 in rotation from the opening 712 provided on the lower surface of the nozzle 71a. The cleaning liquid that has been applied to the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and scatters from the outer peripheral edge of the substrate 9 in the radial direction along with the SC1 liquid remaining on the upper surface 91. . The SC1 liquid and the cleaning liquid scattered from the substrate 9 are received by the inner wall of the first protective cover 41 and discarded through the discharge port 44. Thereby, the cleaning of the first protective cover 41 is substantially performed together with the cleaning process of the upper surface 91 of the substrate 9. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, 1200 rpm.

對向部5a的下表面513係比基板9還廣。因此，能在以下表面513總括地覆蓋基板9的整面的狀態下對基板9 進行液體處理或者乾燥處理。藉此，能均勻地處理基板9的整面。 The lower surface 513 of the facing portion 5 a is wider than the substrate 9. Therefore, the substrate 9 can be covered with the following surface 513 as a whole covering the entire surface of the substrate 9. Perform liquid treatment or drying. Thereby, the entire surface of the substrate 9 can be processed uniformly.

之後，從噴嘴71a的開口716將洗淨液供給至對向部5a的下表面513，藉此進行用以洗淨該下表面513之對向部洗淨處理(步驟ST6)。此外，在後述的<對向部洗淨工序的處理例>詳細地說明對向部洗淨處理。 Thereafter, the cleaning liquid is supplied from the opening 716 of the nozzle 71a to the lower surface 513 of the opposing portion 5a, thereby performing an opposing portion cleaning process for cleaning the lower surface 513 (step ST6). In addition, the facing part washing process will be described in detail in the "processing example of the facing part washing step" described later.

當結束對向部洗淨處理時，執行用以從噴嘴71a的開口714對基板9的上表面91供給IPA之IPA處理(步驟ST7)。在IPA處理時，第二防護罩42係位於能接住從基板9飛散的IPA的高度。在IPA處理中，從設置於噴嘴71a的下表面之開口714對旋轉中的基板9的上表面91連續性地供給IPA。已著液至上表面91的IPA係進行用以藉由該基板9的旋轉而朝基板9的外周部擴展並在上表面91的整體將純水置換成IPA之IPA處理。此外，亦可以促進IPA置換為目的藉由省略圖示的加熱機構對基板9進行加熱處理。此期間係例如為30秒。此外，此期間中的基板9以及對向部5的旋轉速度係例如為300rpm。此外，IPA的噴出流量係例如為300ml/m(毫升/分)。 When the facing part washing process is finished, an IPA process for supplying IPA to the upper surface 91 of the substrate 9 from the opening 714 of the nozzle 71a is performed (step ST7). During the IPA process, the second protective cover 42 is located at a height capable of catching the IPA scattered from the substrate 9. In the IPA process, the IPA is continuously supplied to the upper surface 91 of the rotating substrate 9 from the opening 714 provided on the lower surface of the nozzle 71a. The IPA that has been immersed on the upper surface 91 is an IPA treatment for expanding the outer surface of the substrate 9 by the rotation of the substrate 9 and replacing pure water with IPA on the entire upper surface 91. In addition, for the purpose of promoting IPA replacement, the substrate 9 may be heated by a heating mechanism (not shown). This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5 during this period is, for example, 300 rpm. The discharge flow rate of the IPA is, for example, 300 ml / m (ml / min).

停止從開口714噴出IPA後，開始從開口715噴出撥水化劑(步驟ST8)。於撥水化處理時，從設置於噴嘴71a的下表面之開口715對旋轉中的基板9的上表面91連續性地 供給撥水化劑。已著液至上表面91的撥水化劑係藉由該基板9的旋轉而朝基板9的外周部擴展，並在上表面91的整體進行用以表面改質成撥水性之撥水化處理。此期間係例如為30秒。此外，此期間中的基板9以及對向部5a的旋轉速度係例如為500rpm。從基板9飛散的撥水化劑係被第二防護罩42的內壁接住並從排出埠44被廢棄。此外，撥水化劑的噴出流量係例如為300ml/m。 After the discharge of the IPA from the opening 714 is stopped, the water-repellent agent is started to be discharged from the opening 715 (step ST8). During the water repellent treatment, the upper surface 91 of the rotating substrate 9 is continuously formed from the opening 715 provided on the lower surface of the nozzle 71a. Supply water repellent. The water-repellent agent that has been applied to the upper surface 91 is expanded toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and a water-repellent treatment for surface modification to water repellency is performed on the entire upper surface 91. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5a during this period is, for example, 500 rpm. The water-repellent agent scattered from the substrate 9 is caught by the inner wall of the second protective cover 42 and is discarded from the discharge port 44. The discharge flow rate of the water-repellent agent is, for example, 300 ml / m.

停止從開口715噴出撥水化劑後，以與上述同樣的處理條件進行IPA處理(步驟ST9)。當結束各種液體處理時，接著執行旋乾處理(步驟ST10)。在旋乾處理中，基板9以及對向部5a係以比各種液體處理時還快的速度旋轉。此期間中的基板9以及對向部5a的旋轉速度係例如為1500rpm。藉此，附著至基板9以及對向部5a的各種液體係從外周緣朝徑方向外側方向飛散並被第二防護罩42的內壁接住，經由排出埠44被廢棄。 After the spraying of the water-repellent agent from the opening 715 is stopped, the IPA treatment is performed under the same processing conditions as described above (step ST9). When the various liquid processes are ended, the spin-drying process is performed next (step ST10). In the spin-drying process, the substrate 9 and the facing portion 5a are rotated at a faster speed than during the processing of various liquids. The rotation speed of the substrate 9 and the facing portion 5a during this period is, for example, 1500 rpm. Thereby, various liquid systems adhered to the substrate 9 and the facing portion 5 a are scattered from the outer peripheral edge toward the outside in the radial direction, are caught by the inner wall of the second protective cover 42, and are discarded through the discharge port 44.

當結束旋乾處理時，對向部5a係藉由升降機構62而上升並變成圖10所示的狀態，且基板9係被外部的搬運機器人從自轉夾具31搬出(步驟ST11)。 When the spin-drying process is completed, the facing portion 5a is raised by the lifting mechanism 62 and becomes the state shown in FIG. 10, and the substrate 9 is carried out from the rotation jig 31 by an external transfer robot (step ST11).

藉此，結束基板處理裝置1a所為之各種處理。在此，詳細地說明第二實施形態的對向部洗淨工序(在此為步驟ST6)。 Thereby, various processes performed by the substrate processing apparatus 1a are completed. Here, the facing portion washing step (here, step ST6) of the second embodiment will be described in detail.

<對向部洗淨工序的處理例> <Processing Example of Opposing Section Washing Process>

圖14係第二實施形態的對向部洗淨工序(步驟ST6)中的各個處理的時序圖。對向部洗淨工序係在對向部5a位於圖11所示的對向位置L2a且噴嘴71a的開口716朝向下表面513的狀態下執行。亦即，在本實施形態中，對向位置L2a係變成洗淨對向部5a時的洗淨位置。 FIG. 14 is a timing chart of each process in the facing part washing step (step ST6) of the second embodiment. The facing portion washing step is performed in a state where the facing portion 5 a is located at the facing position L2 a shown in FIG. 11 and the opening 716 of the nozzle 71 a faces the lower surface 513. That is, in this embodiment, the facing position L2a is a washing position when the facing part 5a is washed.

首先，從時刻t1開始清洗液供給工序101以及液膜形成工序102。如上所述，清洗液供給工序101係用以對基板9的上表面91供給清洗液之工序。在清洗液供給工序101中，與上述步驟ST5同樣地，從開口712對基板9的上表面91供給清洗液。此外，如上所述，液膜形成工序102係指下述工序：藉由自轉馬達33使基板9以水平姿勢旋轉，藉此於基板9的上表面91形成在清洗液供給工序101中所供給的清洗液的液膜。 First, the cleaning liquid supply step 101 and the liquid film forming step 102 are started from time t1. As described above, the cleaning liquid supply step 101 is a step for supplying a cleaning liquid to the upper surface 91 of the substrate 9. In the cleaning liquid supply step 101, the cleaning liquid is supplied from the opening 712 to the upper surface 91 of the substrate 9 in the same manner as in the above-mentioned step ST5. In addition, as described above, the liquid film forming step 102 refers to a step in which the substrate 9 is rotated in a horizontal posture by the rotation motor 33, thereby forming an upper surface 91 of the substrate 9 formed in the cleaning liquid supply step 101. Liquid film of cleaning solution.

液膜形成工序102中之在比進行第二對向部旋轉工序106還之前的期間(時刻t1至時刻t3)中的基板9的旋轉速度係例如為10rpm。此期間的旋轉速度係比基板液體處理工序(步驟ST2至步驟ST5、步驟ST7至步驟ST10)中的基板的旋轉速度(在上述例子中為300rpm至1500rpm)還低速。如此，在液膜形成工序102中以比基板液體處理工序還低速使基板9旋轉，藉此能於基板9的上表面91形成厚的清 洗液的液膜。此外，此時所形成的清洗液的液膜的平均厚度係例如為1mm至2mm。 In the liquid film forming step 102, the rotation speed of the substrate 9 in the period (time t1 to time t3) before the second facing portion rotation step 106 is performed is, for example, 10 rpm. The rotation speed during this period is lower than the rotation speed (in the above example, 300 rpm to 1500 rpm) of the substrate in the substrate liquid processing step (step ST2 to step ST5, step ST7 to step ST10). In this way, in the liquid film forming step 102, the substrate 9 is rotated at a lower speed than the substrate liquid processing step, so that a thick clear film can be formed on the upper surface 91 of the substrate 9. Liquid film of lotion. The average thickness of the liquid film of the cleaning liquid formed at this time is, for example, 1 mm to 2 mm.

之後，從時刻t2開始洗淨液供給工序103以及第一對向部旋轉工序104。在本實施形態中，洗淨液供給工序103係指在基板9的上表面91形成有清洗液的液膜的狀態下從噴嘴71a的開口716對對向部5a的下表面513供給洗淨液(例如與清洗液相同的純水)之工序。 Thereafter, the cleaning liquid supply step 103 and the first facing portion rotation step 104 are started from time t2. In this embodiment, the cleaning liquid supply step 103 refers to supplying the cleaning liquid from the opening 716 of the nozzle 71a to the lower surface 513 of the facing portion 5a in a state where a liquid film of the cleaning liquid is formed on the upper surface 91 of the substrate 9. (For example, the same pure water as the cleaning solution).

如此，由於在洗淨液供給工序103中形成有清洗液的液膜的狀態下對對向部5a的下表面513供給洗淨液，因此即使洗淨液以及/或者微粒等異物從下表面513落下，洗淨液以及/或者微粒等異物亦不會附著至基板9的上表面91而是容易被液膜沖流至基板9的外側。因此，能降低基板9被污染的風險並能在基板處理的過程中洗淨對向部5。 As described above, since the cleaning liquid is supplied to the lower surface 513 of the facing portion 5a in a state where a liquid film of the cleaning liquid is formed in the cleaning liquid supply step 103, even if the cleaning liquid and / or foreign matters such as particles are from the lower surface 513 When dropped, foreign matter such as cleaning liquid and / or particles does not adhere to the upper surface 91 of the substrate 9, but is easily washed out of the substrate 9 by the liquid film. Therefore, the risk of contamination of the substrate 9 can be reduced, and the facing portion 5 can be cleaned during substrate processing.

此外，在本實施形態中，第一對向部旋轉工序104係用以藉由自轉馬達33使卡合至卡合部36的對向部5a以水平姿勢旋轉之工序。第一對向部旋轉工序104係與洗淨液供給工序103並行地進行。在第一對向部旋轉工序104中係以與液膜形成工序102中的基板9的旋轉速度相同的旋轉速度(例如10rpm)使對向部5a旋轉。 In the present embodiment, the first facing portion rotation step 104 is a step for rotating the facing portion 5 a engaged with the engaging portion 36 in a horizontal posture by the rotation motor 33. The first facing portion rotation step 104 is performed in parallel with the cleaning liquid supply step 103. In the first facing portion rotation step 104, the facing portion 5a is rotated at the same rotation speed (for example, 10 rpm) as the rotation speed of the substrate 9 in the liquid film forming step 102.

如此，旋轉屬於洗淨對象之對向部5a，藉此能在洗淨液供給工序103中容易地洗淨對向部5a的下表面513的整體。此外，由於對向部5a的旋轉速度係與基板9的旋轉速度同樣為低速，因此已被供給至下表面513的洗淨液不易濺起至下方。藉此，能降低位於對向部5a的下方之基板9被污染的風險。 In this way, by rotating the facing portion 5 a belonging to the cleaning target, the entire lower surface 513 of the facing portion 5 a can be easily washed in the cleaning liquid supply step 103. In addition, since the rotation speed of the facing portion 5 a is the same as the rotation speed of the substrate 9, the cleaning liquid that has been supplied to the lower surface 513 is unlikely to splash down. Thereby, the risk of contamination of the substrate 9 located below the facing portion 5a can be reduced.

之後，當變成時刻t3時，結束洗淨液供給工序103以及第一對向部旋轉工序104。在本實施形態中，在時刻t2至時刻t3的期間中並行地進行清洗液供給工序101與洗淨液供給工序103。因此，即使在洗淨液供給工序103中洗淨液以及/或者異物從對向部5a的下表面513落下，洗淨液以及/或者異物亦容易被新供給至基板9的上表面91的清洗液沖流至基板9的外側。因此，能進一步降低基板9被污染的風險。 After that, when it is time t3, the washing liquid supply step 103 and the first facing portion rotation step 104 are ended. In this embodiment, the cleaning liquid supply step 101 and the cleaning liquid supply step 103 are performed in parallel during a period from time t2 to time t3. Therefore, even if the cleaning liquid and / or foreign matter falls from the lower surface 513 of the facing portion 5a in the cleaning liquid supply step 103, the cleaning liquid and / or foreign matter can be easily supplied to the upper surface 91 of the substrate 9 for cleaning The liquid flows to the outside of the substrate 9. Therefore, the risk of contamination of the substrate 9 can be further reduced.

在時刻t3至時刻t5中，進行第二對向部旋轉工序106。第二對向部旋轉工序106係在洗淨液供給工序103以及第一對向部旋轉工序104之後進行。此外，液膜形成工序102中之進行第二對向部旋轉工序106之期間係使對向部5a以比更早之前的期間(時刻t1至時刻t3)中的基板9的旋轉速度(例如10rpm)還高速(例如1500rpm)旋轉之期間。如此，以高速使對向部5a旋轉，藉此能藉由離心力使附著至對向部5a的下表面513的洗淨液以及/或者可能殘留於對向部 5a的下表面513的異物朝周圍飛散而使對向部5a乾燥。 From time t3 to time t5, the second facing portion rotation step 106 is performed. The second facing portion rotation step 106 is performed after the cleaning liquid supply step 103 and the first facing portion rotation step 104. In addition, the period during which the second facing portion rotation step 106 is performed in the liquid film forming step 102 is to cause the facing portion 5a to rotate at a speed (for example, 10 rpm) of the substrate 9 in a period earlier than the period (time t1 to time t3). ) Also during high speed (e.g. 1500 rpm) rotation. In this way, by rotating the facing portion 5a at a high speed, the cleaning liquid adhered to the lower surface 513 of the facing portion 5a and / or may remain in the facing portion by centrifugal force. Foreign matter on the lower surface 513 of 5a is scattered around, and the facing portion 5a is dried.

此外，在液膜形成工序102中之進行第二對向部旋轉工序106之期間(時刻t3至時刻t5)中，基板9亦以與對向部5a相同的旋轉速度高速地旋轉。因此，此期間中，基板9上的液膜的厚度係變得比進行洗淨液供給工序103以及第一對向部旋轉工序104之期間還薄。然而，在執行第二對向部旋轉工序106時，亦能藉由於基板9上形成有薄的液膜來降低洗淨液落下導致基板9污染的風險。 In the period (time t3 to time t5) during which the second facing portion rotation step 106 is performed in the liquid film forming step 102, the substrate 9 is also rotated at a high speed at the same rotation speed as the facing portion 5a. Therefore, during this period, the thickness of the liquid film on the substrate 9 becomes thinner than the period during which the cleaning liquid supply step 103 and the first facing portion rotation step 104 are performed. However, when the second facing portion rotation step 106 is performed, the risk of contamination of the substrate 9 caused by the falling of the cleaning liquid can also be reduced by forming a thin liquid film on the substrate 9.

接著，在結束第二對向部旋轉工序106之時刻t5中亦結束清洗液供給工序101以及液膜形成工序102，且亦結束用以洗淨對向部5a之對向部洗淨工序(步驟ST6)。 Then, at the time t5 when the second facing portion rotation step 106 is finished, the cleaning liquid supply step 101 and the liquid film forming step 102 are also ended, and the facing portion washing step (steps) for washing the facing portion 5a is also ended. ST6).

<3.第三實施形態> <3. Third Embodiment>

接著，說明第三實施形態的基板處理裝置1b。圖15以及圖16係用以顯示第三實施形態的基板處理裝置1b之概略側視圖。此外，圖15係顯示對向部5a位於退避位置L1a之狀態，圖16係顯示對向部5a位於對向位置L2a之狀態。 Next, a substrate processing apparatus 1b according to a third embodiment will be described. 15 and 16 are schematic side views showing a substrate processing apparatus 1b according to the third embodiment. In addition, FIG. 15 shows a state where the facing portion 5a is located at the retreated position L1a, and FIG. 16 shows a state where the facing portion 5a is located at the facing position L2a.

本實施形態的基板處理裝置1b係具備有與第二實施形態的基板處理裝置1a大致同樣的構成。然而，在基板處理裝置1b中，對向部移動機構6的保持旋轉機構61a係具 備有本體旋轉部615。因此，在基板處理裝置1b中，對向部5a係構成為可主動地旋轉。 The substrate processing apparatus 1b of the present embodiment has a configuration substantially the same as that of the substrate processing apparatus 1a of the second embodiment. However, in the substrate processing apparatus 1b, the holding and rotating mechanism 61a of the opposing portion moving mechanism 6 is fastened. There is a body rotation part 615. Therefore, in the substrate processing apparatus 1b, the facing portion 5a is configured to be actively rotatable.

噴嘴71b係從保持部本體611a的中央部朝下方突出。噴嘴71b係以非接觸狀態插入至筒狀部521。與第二實施形態的噴嘴71a同樣地，於噴嘴71b的下表面形成有開口711至開口715(參照圖12)。然而，未於噴嘴71b設置開口716。 The nozzle 71b protrudes downward from the center of the holding portion body 611a. The nozzle 71b is inserted into the cylindrical portion 521 in a non-contact state. Similarly to the nozzle 71a of the second embodiment, openings 711 to 715 are formed on the lower surface of the nozzle 71b (see FIG. 12). However, no opening 716 is provided in the nozzle 71b.

在對向部5a被自轉夾具31保持的狀態下，對向部5a的側壁部512的下端部係位於比自轉夾具31的自轉基座32的上表面還下方或者位於上下方向中與自轉基座32的上表面相同的位置。當在對向部5a位於對向位置L2a的狀態下驅動自轉馬達33時，對向部5a係與基板9以及自轉夾具31一起旋轉。如此，在對向部5a位於對向位置L2a的狀態下，藉由自轉馬達33的旋轉驅動力使基板9以及對向部5a一體性地繞著中心軸J1旋轉。另一方面，在對向部5a位於退避位置L1a的狀態下，藉由自轉馬達33的旋轉驅動力基板9變得可以繞著中心軸J1旋轉，且藉由本體旋轉部615的旋轉驅動力對向部5a變得可以繞著中心軸J1旋轉。 In a state where the opposing portion 5 a is held by the rotation jig 31, the lower end portion of the side wall portion 512 of the opposing portion 5 a is located below the upper surface of the rotation base 32 of the rotation jig 31 or in a vertical direction with the rotation base The top surface of 32 is the same position. When the rotation motor 33 is driven in a state where the facing portion 5 a is at the facing position L2 a, the facing portion 5 a rotates together with the substrate 9 and the rotation jig 31. In this manner, in a state where the facing portion 5a is located at the facing position L2a, the substrate 9 and the facing portion 5a are integrally rotated around the central axis J1 by the rotational driving force of the rotation motor 33. On the other hand, in a state where the facing portion 5a is located at the retracted position L1a, the substrate 9 becomes rotatable about the central axis J1 by the rotation driving force of the rotation motor 33, and is rotated by the rotation driving force of the body rotation portion 615. The facing portion 5a becomes rotatable about the central axis J1.

此外，基板處理裝置1b係具備有噴嘴74。如第一實施形態中所說明般，噴嘴74係將從省略圖示的供給源所供 給的洗淨液供給至對向部5a的下表面513。以省略圖示的馬達使噴嘴臂的基端部繞著沿著鉛直方向的軸轉動，藉此噴嘴74係在接近對向部5a且朝向對向部5a的下表面513呈開口之處理位置(圖15中以二點鏈線所示的位置)與已從對向部5a離開之待機位置(圖15中以實線所示的位置)之間移動。此外，如圖15所示，可使噴嘴74移動至處理位置之時序係對向部5a位於退避位置L1a之時序。 The substrate processing apparatus 1 b is provided with a nozzle 74. As described in the first embodiment, the nozzle 74 is supplied from a supply source (not shown). The supplied cleaning liquid is supplied to the lower surface 513 of the facing portion 5a. A motor (not shown) is used to rotate the base end portion of the nozzle arm about an axis along the vertical direction, whereby the nozzle 74 is located at a processing position that is close to the facing portion 5a and opens toward the lower surface 513 of the facing portion 5a ( The position shown by the two-dot chain line in FIG. 15) and the standby position (the position shown by the solid line in FIG. 15) that has been separated from the facing portion 5 a. In addition, as shown in FIG. 15, the timing at which the nozzle 74 can be moved to the processing position is the timing at which the facing portion 5 a is located at the retreat position L1 a.

<基板處理裝置1b的動作例> <Operation example of the substrate processing apparatus 1b>

以下，參照圖6說明基板處理裝置1b中的處理例。雖然在以下的處理例中說明從噴嘴71b供給使用於基板9的液體處理之各種處理液之態樣，但亦可為從噴嘴73供給使用於基板9的液體處理之一部分的處理液之態樣。 Hereinafter, a processing example in the substrate processing apparatus 1 b will be described with reference to FIG. 6. In the following processing examples, various processing liquids used for the liquid processing of the substrate 9 are supplied from the nozzle 71 b. However, the processing liquids used as part of the liquid processing for the substrate 9 may be supplied from the nozzle 73 b. .

首先，在對向部5a位於退避位置L1a的狀態下(參照圖15)，藉由外部的搬運機器人將基板9搬入至腔室11內並載置於自轉基座32的夾具銷35上。結果，該基板9係被夾具銷35從下側支撐(步驟ST1)。 First, in a state where the facing portion 5 a is located at the retracted position L1 a (see FIG. 15), the substrate 9 is carried into the chamber 11 by an external transfer robot and placed on the clamp pin 35 of the rotation base 32. As a result, the substrate 9 is supported from the lower side by the clamp pin 35 (step ST1).

當基板9被搬入時，升降機構62係使對向部5a從退避位置L1a下降至對向位置L2a。藉此，形成有被自轉基座32的保持面32a、頂蓋部511a的下表面513以及側壁部512的內周面圍繞的空間。接著，藉由自轉馬達33使基板9開始旋轉。 When the substrate 9 is carried in, the lifting mechanism 62 lowers the facing portion 5a from the retreat position L1a to the facing position L2a. Thereby, a space surrounded by the holding surface 32a of the rotation base 32, the lower surface 513 of the top cover portion 511a, and the inner peripheral surface of the side wall portion 512 is formed. Next, the rotation of the substrate 9 is started by the rotation motor 33.

在此狀態下，對基板9的上表面91執行使用了各種處理液之液體處理。首先，執行用以從噴嘴71b的開口711對基板9的上表面91供給氫氟酸之氫氟酸處理(步驟ST2)。在氫氟酸處理時，第一防護罩41係位於能接住從基板9飛散的處理液之高度。在氫氟酸處理中，從設置於噴嘴71b的下表面的開口711對旋轉中的基板9的上表面91連續性地供給氫氟酸。已著液至上表面91的氫氟酸係藉由該基板9的旋轉而朝基板9的外周部擴展，並在上表面91的整體進行氫氟酸處理。此期間係例如為30秒。此外，此期間中的基板9以及對向部5a的旋轉速度係例如為800rpm至1000rpm。 In this state, liquid processing using various processing liquids is performed on the upper surface 91 of the substrate 9. First, a hydrofluoric acid process for supplying hydrofluoric acid to the upper surface 91 of the substrate 9 from the opening 711 of the nozzle 71b is performed (step ST2). During the hydrofluoric acid treatment, the first protective cover 41 is positioned at a height capable of catching the processing liquid scattered from the substrate 9. In the hydrofluoric acid treatment, hydrofluoric acid is continuously supplied to the upper surface 91 of the substrate 9 in rotation from the opening 711 provided on the lower surface of the nozzle 71b. The hydrofluoric acid that has been deposited on the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and is subjected to hydrofluoric acid treatment on the entire upper surface 91. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5a during this period is, for example, 800 rpm to 1000 rpm.

停止從開口711噴出氫氟酸後，開始從開口712噴出清洗液(步驟ST3)。於清洗處理時，從設置於噴嘴71b的下表面的開口712對旋轉中的基板9的上表面91連續性地供給清洗液。已著液至上表面91的清洗液係藉由該基板9的旋轉而朝基板9的外周部擴展，並與殘存於上表面91上的氫氟酸一起從基板9的外周緣朝徑方向外側方向飛散。從基板9飛散的氫氟酸以及清洗液係被第一防護罩41的內壁接住並經由排出埠44被廢棄。藉此，實質性地與基板9的上表面91的清洗處理一起進行第一防護罩41的洗淨。此期間係例如為30秒。此外，此期間中的基板9以及對向部5a的旋轉速度係例如為1200rpm。 After the discharge of hydrofluoric acid from the opening 711 is stopped, the cleaning liquid is started to be discharged from the opening 712 (step ST3). During the cleaning process, the cleaning liquid is continuously supplied to the upper surface 91 of the substrate 9 in rotation from the opening 712 provided on the lower surface of the nozzle 71b. The cleaning liquid that has been applied to the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and along with the hydrofluoric acid remaining on the upper surface 91, moves outward from the outer peripheral edge of the substrate 9 in the radial direction. Flying away. The hydrofluoric acid and the cleaning liquid scattered from the substrate 9 are received by the inner wall of the first protective cover 41 and discarded through the discharge port 44. Thereby, the cleaning of the first protective cover 41 is substantially performed together with the cleaning process of the upper surface 91 of the substrate 9. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5a during this period is, for example, 1200 rpm.

停止從開口712噴出清洗液後，開始從開口713噴出SC1液體(步驟ST4)。在SC1處理時，從設置於噴嘴71b的下表面之開口713對旋轉中的基板9的上表面91連續性地供給SC1液體。已著液至上表面91的SC1液體係藉由該基板9的旋轉而朝基板9的外周部擴展，並在上表面91的整體進行SC1處理。此期間係例如為30秒。此外，此期間中的基板9以及對向部5a的旋轉速度係例如為800rpm。從基板9飛散的SC1液體係被第二防護罩42的內壁接住並從排出埠44被廢棄。 After the discharge of the cleaning liquid from the opening 712 is stopped, the SC1 liquid is started to be discharged from the opening 713 (step ST4). During the SC1 process, the SC1 liquid is continuously supplied to the upper surface 91 of the rotating substrate 9 from the opening 713 provided on the lower surface of the nozzle 71b. The SC1 liquid system that has been deposited on the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and performs SC1 treatment on the entire upper surface 91. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5a during this period is, for example, 800 rpm. The SC1 liquid system scattered from the substrate 9 is caught by the inner wall of the second protective cover 42 and is discarded from the discharge port 44.

停止從開口713噴出SC1液體後，開始從開口712噴出清洗液(步驟ST5)。於清洗處理時，從設置於噴嘴71b的下表面之開口712對旋轉中的基板9的上表面91連續性地供給清洗液。已著液至上表面91的清洗液係藉由該基板9的旋轉而朝基板9的外周部擴展，並與殘存於上表面91上的SC1液體一起從基板9的外周緣朝徑方向外側方向飛散。從基板9飛散的SC1液體以及清洗液係被第一防護罩41的內壁接住並經由排出埠44被廢棄。藉此，實質性地與基板9的上表面91的清洗處理一起進行第一防護罩41的洗淨。此期間係例如為30秒。此外，此期間中的基板9以及對向部5a的旋轉速度係例如為1200rpm。 After the discharge of the SC1 liquid from the opening 713 is stopped, the cleaning liquid is started to be discharged from the opening 712 (step ST5). During the cleaning process, the cleaning liquid is continuously supplied to the upper surface 91 of the substrate 9 in rotation from the opening 712 provided on the lower surface of the nozzle 71b. The cleaning liquid that has been applied to the upper surface 91 expands toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and scatters from the outer peripheral edge of the substrate 9 in the radial direction along with the SC1 liquid remaining on the upper surface 91. . The SC1 liquid and the cleaning liquid scattered from the substrate 9 are received by the inner wall of the first protective cover 41 and discarded through the discharge port 44. Thereby, the cleaning of the first protective cover 41 is substantially performed together with the cleaning process of the upper surface 91 of the substrate 9. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5a during this period is, for example, 1200 rpm.

之後，升降機構62係使對向部5a從對向位置L2a上 升至退避位置L1a。此外，藉由未圖示的驅動機構使噴嘴74移動至處理位置(圖15中以二點鏈線所示的位置)。接著，從噴嘴74將洗淨液供給至對向部5a的下表面513，藉此進行用以洗淨該下表面513之對向部洗淨處理(步驟ST6)。此外，在後述的<對向部洗淨工序的處理例>詳細地說明對向部洗淨處理。 Thereafter, the lifting mechanism 62 moves the facing portion 5a from the facing position L2a Raise to retreat position L1a. The nozzle 74 is moved to a processing position (a position indicated by a two-dot chain line in FIG. 15) by a driving mechanism (not shown). Next, the cleaning liquid is supplied from the nozzle 74 to the lower surface 513 of the opposing portion 5a, thereby performing an opposing portion cleaning process for cleaning the lower surface 513 (step ST6). In addition, the facing part washing process will be described in detail in the "processing example of the facing part washing step" described later.

當結束對向部洗淨處理時，藉由未圖示的驅動機構使噴嘴74移動至待機位置(圖15中以實線所示的位置)。此外，升降機構62係使對向部5a從退避位置L1a下降至對向位置L2a。在此狀態下，執行用以從噴嘴71b的開口714對基板9的上表面91供給IPA之IPA處理(步驟ST7)。在IPA處理時，第二防護罩42係位於能接住從基板9飛散的IPA的高度。在IPA處理中，從設置於噴嘴71b的下表面之開口714對旋轉中的基板9的上表面91連續性地供給IPA。已著液至上表面91的IPA係進行用以藉由該基板9的旋轉而朝基板9的外周部擴展並在上表面91的整體將純水置換成IPA之IPA處理。此外，亦可以促進IPA置換為目的藉由省略圖示的加熱機構對基板9進行加熱處理。此期間係例如為30秒。此外，此期間中的基板9以及對向部5a的旋轉速度係例如為300rpm。此外，IPA的噴出流量係例如為300ml/m(毫升/分)。 When the facing portion washing process is completed, the nozzle 74 is moved to a standby position (a position shown by a solid line in FIG. 15) by a driving mechanism (not shown). In addition, the lifting mechanism 62 lowers the facing portion 5a from the retreat position L1a to the facing position L2a. In this state, an IPA process is performed to supply IPA to the upper surface 91 of the substrate 9 from the opening 714 of the nozzle 71b (step ST7). During the IPA process, the second protective cover 42 is located at a height capable of catching the IPA scattered from the substrate 9. In the IPA process, the IPA is continuously supplied to the upper surface 91 of the rotating substrate 9 from the opening 714 provided on the lower surface of the nozzle 71b. The IPA that has been immersed on the upper surface 91 is an IPA treatment for expanding the outer surface of the substrate 9 by the rotation of the substrate 9 and replacing pure water with IPA on the entire upper surface 91. In addition, for the purpose of promoting IPA replacement, the substrate 9 may be heated by a heating mechanism (not shown). This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5a during this period is, for example, 300 rpm. The discharge flow rate of the IPA is, for example, 300 ml / m (ml / min).

停止從開口714噴出IPA後，開始從開口715噴出撥 水化劑(步驟ST8)。於撥水化處理時，從設置於噴嘴71b的下表面之開口715對旋轉中的基板9的上表面91連續性地供給撥水化劑。已著液至上表面91的撥水化劑係藉由該基板9的旋轉而朝基板9的外周部擴展，並在上表面91的整體進行用以表面改質成撥水性之撥水化處理。此期間係例如為30秒。此外，此期間中的基板9以及對向部5a的旋轉速度係例如為500rpm。從基板9飛散的撥水化劑係被第二防護罩42的內壁接住並從排出埠44被廢棄。此外，撥水化劑的噴出流量係例如為300ml/m。 After stopping spraying of IPA through opening 714, start spraying through opening 715. Hydrating agent (step ST8). During the water-repellent treatment, the water-repellent agent is continuously supplied to the upper surface 91 of the rotating substrate 9 from the opening 715 provided on the lower surface of the nozzle 71b. The water-repellent agent that has been applied to the upper surface 91 is expanded toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and a water-repellent treatment for surface modification to water repellency is performed on the entire upper surface 91. This period is, for example, 30 seconds. The rotation speed of the substrate 9 and the facing portion 5a during this period is, for example, 500 rpm. The water-repellent agent scattered from the substrate 9 is caught by the inner wall of the second protective cover 42 and is discarded from the discharge port 44. The discharge flow rate of the water-repellent agent is, for example, 300 ml / m.

停止從開口715噴出撥水化劑後，以與上述同樣的處理條件進行IPA處理(步驟ST9)。當結束各種液體處理時，接著執行旋乾處理(步驟ST10)。在旋乾處理中，基板9以及對向部5a係以比各種液體處理時還快的速度旋轉。此期間中的基板9以及對向部5a的旋轉速度係例如為1500rpm。藉此，附著至基板9以及對向部5a的各種液體係從外周緣朝徑方向外側方向飛散並被第二防護罩42的內壁接住，經由排出埠44被廢棄。 After the spraying of the water-repellent agent from the opening 715 is stopped, the IPA treatment is performed under the same processing conditions as described above (step ST9). When the various liquid processes are ended, the spin-drying process is performed next (step ST10). In the spin-drying process, the substrate 9 and the facing portion 5a are rotated at a faster speed than during the processing of various liquids. The rotation speed of the substrate 9 and the facing portion 5a during this period is, for example, 1500 rpm. Thereby, various liquid systems adhered to the substrate 9 and the facing portion 5 a are scattered from the outer peripheral edge toward the outside in the radial direction, are caught by the inner wall of the second protective cover 42, and are discarded through the discharge port 44.

當結束旋乾處理時，對向部5a係藉由升降機構62而上升並變成圖15所示的狀態，且基板9係被外部的搬運機器人從自轉夾具31搬出(步驟ST11)。 When the spin-drying process is completed, the facing portion 5a is raised by the lifting mechanism 62 and becomes the state shown in FIG. 15, and the substrate 9 is carried out from the rotation jig 31 by an external transfer robot (step ST11).

藉此，結束基板處理裝置1b所為之各種處理。在此， 參照圖6詳細地說明第二實施形態的對向部洗淨工序(在此為步驟ST6)。 Thereby, various processes performed by the substrate processing apparatus 1b are completed. here, The facing portion cleaning step (here, step ST6) of the second embodiment will be described in detail with reference to Fig. 6.

<對向部洗淨工序的處理例> <Processing Example of Opposing Section Washing Process>

如圖15所示，對向部洗淨工序係在對向部5a位於退避位置L1a且噴嘴74位於二點鏈線所示的處理位置的狀態下執行。亦即，在本實施形態中，退避位置L1a係相當於洗淨對向部5a時的洗淨位置。 As shown in FIG. 15, the facing portion washing step is performed in a state where the facing portion 5 a is located at the retracted position L1 a and the nozzle 74 is located at a processing position indicated by a two-dot chain line. That is, in this embodiment, the retreat position L1a corresponds to a washing position when the facing portion 5a is washed.

首先，從時刻t1開始清洗液供給工序101以及液膜形成工序102。如上所述，清洗液供給工序101係用以對基板9的上表面91供給清洗液之工序。在清洗液供給工序101中，與上述步驟ST5同樣地，從開口712對基板9的上表面91供給清洗液。此外，如上所述，液膜形成工序102係指下述工序：藉由自轉馬達33使被自轉夾具31保持的基板9以水平姿勢旋轉，藉此於基板9的上表面91形成在清洗液供給工序101中所供給的清洗液的液膜。 First, the cleaning liquid supply step 101 and the liquid film forming step 102 are started from time t1. As described above, the cleaning liquid supply step 101 is a step for supplying a cleaning liquid to the upper surface 91 of the substrate 9. In the cleaning liquid supply step 101, the cleaning liquid is supplied from the opening 712 to the upper surface 91 of the substrate 9 in the same manner as in the above-mentioned step ST5. In addition, as described above, the liquid film forming step 102 refers to a step of rotating the substrate 9 held by the rotation jig 31 in a horizontal posture by the rotation motor 33, thereby forming the upper surface 91 of the substrate 9 on the cleaning liquid supply. A liquid film of the cleaning liquid supplied in step 101.

液膜形成工序102中的基板9的旋轉速度係例如為10rpm，且比基板液體處理工序(步驟ST2至步驟ST5、步驟ST7至步驟ST10)中的基板的旋轉速度(在上述例子中為300rpm至1500rpm)還低速。如此，在液膜形成工序102中以比基板液體處理工序還低速使基板9旋轉，藉此能於基板9的上表面91形成厚的清洗液的液膜。此時所形成的清 洗液的液膜的平均厚度係例如為1mm至2mm。 The rotation speed of the substrate 9 in the liquid film forming step 102 is, for example, 10 rpm, and is higher than the rotation speed of the substrate in the substrate liquid processing step (step ST2 to step ST5, step ST7 to step ST10) (in the above example, 300 rpm to 1500 rpm) and low speed. As described above, in the liquid film forming step 102, the substrate 9 is rotated at a lower speed than the substrate liquid processing step, whereby a thick liquid film of the cleaning liquid can be formed on the upper surface 91 of the substrate 9. The Qing formed at this time The average thickness of the liquid film of the lotion is, for example, 1 mm to 2 mm.

之後，從時刻t2開始洗淨液供給工序103以及第一對向部旋轉工序104。在本實施形態中，洗淨液供給工序103係指在基板9的上表面91形成有清洗液的液膜的狀態下從噴嘴74對對向部5a的下表面513供給洗淨液(例如與清洗液相同的純水)之工序。 Thereafter, the cleaning liquid supply step 103 and the first facing portion rotation step 104 are started from time t2. In this embodiment, the cleaning liquid supply step 103 refers to the supply of the cleaning liquid from the nozzle 74 to the lower surface 513 of the facing portion 5a in a state where a liquid film of the cleaning liquid is formed on the upper surface 91 of the substrate 9 (for example, with Cleaning liquid is the same as pure water).

如此，由於在洗淨液供給工序103中形成有清洗液的液膜的狀態下對對向部5a的下表面513供給洗淨液，因此即使洗淨液以及/或者微粒等異物從下表面513落下，洗淨液以及/或者微粒等異物亦不會附著至基板9的上表面91而是容易被液膜沖流至基板9的外側。因此，能降低基板9被污染的風險並能在基板處理的過程中洗淨對向部5。 As described above, since the cleaning liquid is supplied to the lower surface 513 of the facing portion 5a in a state where a liquid film of the cleaning liquid is formed in the cleaning liquid supply step 103, even if the cleaning liquid and / or foreign matters such as particles are from the lower surface 513 When dropped, foreign matter such as cleaning liquid and / or particles does not adhere to the upper surface 91 of the substrate 9, but is easily washed out of the substrate 9 by the liquid film. Therefore, the risk of contamination of the substrate 9 can be reduced, and the facing portion 5 can be cleaned during substrate processing.

此外，第一對向部旋轉工序104係用以藉由本體旋轉部615使被保持旋轉機構61保持的對向部5a以水平姿勢旋轉之工序。第一對向部旋轉工序104係與洗淨液供給工序103並行地進行，且在第一對向部旋轉工序104中係以與液膜形成工序102中的基板9的旋轉速度相同的旋轉速度(例如10rpm)使對向部5a旋轉。 The first facing portion rotation step 104 is a step for rotating the facing portion 5 a held by the holding and rotating mechanism 61 in a horizontal posture by the body rotating portion 615. The first facing portion rotation step 104 is performed in parallel with the cleaning liquid supply step 103, and the first facing portion rotation step 104 is performed at the same rotation speed as the rotation speed of the substrate 9 in the liquid film forming step 102. (For example, 10 rpm) The facing portion 5a is rotated.

如此，旋轉屬於洗淨對象之對向部5a，藉此能在洗淨 液供給工序103中容易地洗淨對向部5a的下表面513的整體。此外，由於對向部5a的旋轉速度係與基板9的旋轉速度同樣為低速，因此已被供給至下表面513的洗淨液不易濺起至下方。藉此，能降低位於對向部5a的下方之基板9被污染的風險。 In this way, the facing portion 5a belonging to the object to be cleaned is rotated, whereby the In the liquid supply step 103, the entire lower surface 513 of the facing portion 5a is easily cleaned. In addition, since the rotation speed of the facing portion 5 a is the same as the rotation speed of the substrate 9, the cleaning liquid that has been supplied to the lower surface 513 is unlikely to splash down. Thereby, the risk of contamination of the substrate 9 located below the facing portion 5a can be reduced.

之後，當變成時刻t3時，結束洗淨液供給工序103以及第一對向部旋轉工序104。在本實施形態中，在時刻t2至時刻t3的期間中並行地進行清洗液供給工序101與洗淨液供給工序103。因此，即使在洗淨液供給工序103中洗淨液以及/或者異物從對向部5a的下表面513落下，洗淨液以及/或者異物亦容易被新供給至基板9的上表面91的清洗液沖流至基板9的外側。因此，能進一步降低基板9被污染的風險。 After that, when it is time t3, the washing liquid supply step 103 and the first facing portion rotation step 104 are ended. In this embodiment, the cleaning liquid supply step 101 and the cleaning liquid supply step 103 are performed in parallel during a period from time t2 to time t3. Therefore, even if the cleaning liquid and / or foreign matter falls from the lower surface 513 of the facing portion 5a in the cleaning liquid supply step 103, the cleaning liquid and / or foreign matter is easily cleaned by being newly supplied to the upper surface 91 of the substrate 9. The liquid flows to the outside of the substrate 9. Therefore, the risk of contamination of the substrate 9 can be further reduced.

在時刻t3至時刻t4中，進行對向部升降工序105。在對向部升降工序105中，升降機構62係以對向部5a的下表面513的高度變得比圍繞基板9的周圍之罩部4的上端還高且比基板液體處理工序中用以對基板9的上表面91供給各種液體之各個噴嘴71b、73的各個開口還低之方式使對向部5a升降。 From time t3 to time t4, the facing portion elevating step 105 is performed. In the opposing portion elevating step 105, the elevating mechanism 62 is such that the height of the lower surface 513 of the opposing portion 5a becomes higher than the upper end of the cover portion 4 surrounding the periphery of the substrate 9 and is used for the opposite The upper surface 91 of the base plate 9 raises and lowers the opposing portion 5a so that the respective openings of the nozzles 71b and 73 for supplying various liquids are low.

接著，在調整對向部5a的高度後，在時刻t4至時刻t5中，進行第二對向部旋轉工序106。第二對向部旋轉工 序106係在洗淨液供給工序103以及第一對向部旋轉工序104之後進行，且為用以使對向部5a以比液膜形成工序102中的基板9的旋轉速度還高速(例如1500rpm)旋轉之工序。如此，以高速使對向部5a旋轉，藉此能藉由離心力使附著至對向部5a的下表面513的洗淨液以及/或者可能殘留於對向部5a的下表面513的異物朝周圍飛散而使對向部5a乾燥。 Next, after adjusting the height of the facing portion 5a, the second facing portion rotation step 106 is performed from time t4 to time t5. Second Opposition Rotator The sequence 106 is performed after the cleaning liquid supply step 103 and the first facing portion rotation step 104, and is used to make the facing portion 5a faster than the rotation speed of the substrate 9 in the liquid film forming step 102 (for example, 1500 rpm) ) Rotation process. In this way, the opposing portion 5a is rotated at a high speed, whereby the cleaning liquid adhering to the lower surface 513 of the opposing portion 5a and / or the foreign matter that may remain on the lower surface 513 of the opposing portion 5a can be turned around by centrifugal force. It scatters and dries the facing portion 5a.

此外，在本實施形態中，在已在對向部升降工序105中調整對向部5a的下表面513的高度的狀態下進行第二對向部旋轉工序106。在第二對向部旋轉工序106中，由於下表面513的高度位於比罩部4的上端還高的位置，因此能抑制因為離心力從下表面513飛散至側方的洗淨液以及/或者異物碰撞至罩部4的內壁並濺起至基板9的上表面91。此外，在第二對向部旋轉工序106中，由於下表面513的高度位於比噴嘴71b、73的各個開口還低的位置，因此能抑制因為離心力從下表面513飛散至側方的洗淨液以及/或者異物附著至各個噴嘴71b、73的各個開口附近(從而能抑制各個噴嘴71b、73使用時附著物落下至基板9)。 In the present embodiment, the second facing portion rotation step 106 is performed while the height of the lower surface 513 of the facing portion 5a is adjusted in the facing portion elevating step 105. In the second facing portion rotation step 106, since the height of the lower surface 513 is higher than the upper end of the cover portion 4, it is possible to suppress the washing liquid and / or foreign matter from being scattered from the lower surface 513 to the side due to centrifugal force. It hits the inner wall of the cover part 4 and splashes on the upper surface 91 of the substrate 9. In addition, in the second facing portion rotation step 106, since the height of the lower surface 513 is lower than the respective openings of the nozzles 71b and 73, it is possible to suppress the centrifugal force from scattering from the lower surface 513 to the side washing liquid And / or foreign matter adheres to the vicinity of each opening of each of the nozzles 71b, 73 (thereby suppressing the attachment of each of the nozzles 71b, 73 from falling to the substrate 9 during use).

接著，在結束第二對向部旋轉工序106之時刻t5中亦結束清洗液供給工序101以及液膜形成工序102，且亦結束用以洗淨對向部5a之對向部洗淨工序(步驟ST6)。 Then, at the time t5 when the second facing portion rotation step 106 is finished, the cleaning liquid supply step 101 and the liquid film forming step 102 are also ended, and the facing portion washing step (steps) for washing the facing portion 5a is also ended. ST6).

此外，在本實施形態中，在對向部5a位於退避位置L1a的狀態下進行對向部5a的洗淨。該退避位置L1a係將基板9搬出以及搬入時(步驟ST1、ST11)的位置。然而，亦可將對向部5a配置於比退避位置L1a還下方且比對向位置L2a還上方的位置並洗淨下表面513。在此情形中，由於下表面513接近基板9，因此能降低洗淨液從下表面513落下導致基板9上的清洗液的液膜的崩壞。因此，能有效地降低落下的洗淨液導致基板的污染。 In this embodiment, the facing portion 5a is cleaned in a state where the facing portion 5a is located at the retracted position L1a. This retreat position L1a is a position when the substrate 9 is carried out and carried in (steps ST1 and ST11). However, the opposing portion 5a may be disposed at a position lower than the retreat position L1a and above the opposing position L2a, and the lower surface 513 may be washed. In this case, since the lower surface 513 is close to the substrate 9, it is possible to reduce the collapse of the liquid film of the cleaning liquid on the substrate 9 caused by the falling of the cleaning liquid from the lower surface 513. Therefore, it is possible to effectively reduce the contamination of the substrate caused by the falling cleaning liquid.

在本實施形態的說明中，在對向部洗淨工序(步驟ST6)中在已將對向部5a配置於對向位置L2a的狀態下進行對向部5a的下表面513的洗淨。然而，如在第一實施形態所說明般，亦可在對向部洗淨工序中在已將對向部5a配置於退避位置L1a與對向位置L2a之間的高度位置的洗淨位置的狀態下進行下表面513的洗淨。 In the description of this embodiment, in the facing portion washing step (step ST6), the lower surface 513 of the facing portion 5a is cleaned while the facing portion 5a is disposed at the facing position L2a. However, as described in the first embodiment, it is also possible to use a state in which the opposing portion 5a is disposed at a washing position in a height position between the retracted position L1a and the opposing position L2a in the opposing portion cleaning step Next, the lower surface 513 is cleaned.

<4.變化例> <4. Variations>

以上雖然已經說明本發明的實施形態，但只要未逸離本發明的精神則除了上述實施形態以外亦可進行各種變更。 Although the embodiment of the present invention has been described above, various changes can be made in addition to the above embodiment as long as they do not depart from the spirit of the present invention.

圖17係基板處理裝置1、1b的變化例的對向部洗淨工序(步驟ST6a)中的各個處理的時序圖。與上述第一實施形態以及第三實施形態的對向部洗淨工序(步驟ST6)中的清 洗液供給工序101相比，本變化例中的對向部洗淨工序(步驟ST6a)係具有短時間的清洗液供給工序101a。更具體而言，清洗液供給工序101a係在開始液膜形成工序102之時刻t1開始，並在開始洗淨液供給工序103以及第一對向部旋轉工序104之時刻t2結束。如此，即使清洗液供給工序101a比洗淨液供給工序103還先進行，只要液膜形成工序102充分地以低速進行且藉由清洗液的表面張力使清洗液滯留於基板W的上表面91並保持覆漿(paddle)狀的液膜，則亦能與上述實施形態同樣地藉由該液膜的存在降低基板9的上表面91被污染的風險。 FIG. 17 is a timing chart of each process in the facing part cleaning step (step ST6a) of a modification of the substrate processing apparatuses 1 and 1b. Cleaning in the facing part washing step (step ST6) of the first embodiment and the third embodiment described above Compared with the washing liquid supply step 101, the facing portion washing step (step ST6a) in this modification example has a short washing liquid supply step 101a. More specifically, the cleaning liquid supply step 101a starts at time t1 when the liquid film formation step 102 is started, and ends at time t2 when the cleaning liquid supply step 103 and the first facing portion rotation step 104 are started. In this way, even if the cleaning liquid supply step 101a is performed before the cleaning liquid supply step 103, as long as the liquid film forming step 102 is performed sufficiently at a low speed and the cleaning liquid is retained on the upper surface 91 of the substrate W by the surface tension of the cleaning liquid By maintaining a paddle-shaped liquid film, the risk of contamination of the upper surface 91 of the substrate 9 can be reduced by the presence of the liquid film in the same manner as in the above-described embodiment.

此外，在上述實施形態中，雖然已說明在基板處理裝置1所為之液體處理(步驟ST2至步驟ST5、步驟ST7至步驟ST9)的過程中執行對向部洗淨工序(步驟ST6)的態樣，但本發明的應用態樣並未限定於此。例如，亦可省略上述實施形態中的步驟ST7至步驟ST9，藉此在基板處理裝置1所為之液體處理(步驟ST2至步驟ST5)之後且在乾燥處理(步驟ST10)之前執行對向部洗淨工序(步驟ST6)。如此，對向部洗淨工序係可在基板液體處理工序的過程中的適當的時序執行。 In addition, in the above-mentioned embodiment, it has been described that the facing part cleaning step (step ST6) is performed during the liquid processing (step ST2 to step ST5, step ST7 to step ST9) performed by the substrate processing apparatus 1. However, the application aspect of the present invention is not limited to this. For example, steps ST7 to ST9 in the above-mentioned embodiment may be omitted, whereby the opposite portion cleaning is performed after the liquid processing (step ST2 to step ST5) performed by the substrate processing apparatus 1 and before the drying processing (step ST10). Step (step ST6). In this manner, the facing portion cleaning step can be performed at an appropriate timing during the substrate liquid processing step.

此外，雖然在第二實施形態以及第三實施形態中已說明使用噴嘴71a、71b對基板9的上表面91供給處理液的態樣，但亦可進行使用了噴嘴73的處理液供給以取代使用 了噴嘴71a、71b的處理液供給。例如，亦可在步驟ST9中的IPA處理時使對向部5a升降至退避位置L1a，並使噴嘴73移動至處理位置，且從該噴嘴73對基板9的上表面91供給IPA。如此，在使用噴嘴73進行處理液的供給之情形中，亦可使未圖示的噴嘴臂轉動，藉此一邊在基板9的中央側的上方位置與基板9的外周側的上方位置之間擺動噴嘴73一邊進行處理液的供給。 In addition, although the second and third embodiments have been described in which the nozzle 71a, 71b is used to supply the treatment liquid to the upper surface 91 of the substrate 9, the treatment liquid using the nozzle 73 may be supplied instead of using it. The processing liquid supplied with the nozzles 71a and 71b is supplied. For example, during the IPA processing in step ST9, the opposing portion 5a may be raised and lowered to the retreat position L1a, the nozzle 73 may be moved to the processing position, and the IPA may be supplied from the nozzle 73 to the upper surface 91 of the substrate 9. As described above, when the nozzle 73 is used to supply the processing liquid, a nozzle arm (not shown) can be rotated to swing between the upper position on the center side of the substrate 9 and the upper position on the outer peripheral side of the substrate 9. The nozzle 73 supplies the processing liquid.

在上述實施形態中，雖然已說明利用純水作為清洗液的態樣，但亦可利用純水以外的液體(例如碳酸水)作為清洗液。此外，亦可利用純水以外的液體(例如IPA)作為洗淨液。 In the embodiment described above, a case where pure water is used as the cleaning liquid has been described, but a liquid other than pure water (for example, carbonated water) may be used as the cleaning liquid. In addition, a liquid other than pure water (for example, IPA) may be used as the washing liquid.

以上雖然已說明實施形態以及變化例的基板處理方法，但這些實施形態以及變化例僅為本發明較佳的實施形態的例子，並非是用來限定本發明的實施範圍。只要在本發明的範圍內，本發明係可自由地組合各個實施形態、進行各個實施形態的任意的構成要素的變化、省略各個實施形態中的任意的構成要素。 Although the substrate processing method of the embodiment and the modification has been described above, these embodiments and the modification are merely examples of preferred embodiments of the present invention, and are not intended to limit the implementation scope of the present invention. As long as it is within the scope of the present invention, the present invention can freely combine each embodiment, change any constituent element of each embodiment, and omit any constituent element in each embodiment.

Claims (14)

一種基板處理方法，係包含有：處理工序，係使用具有與基板的上表面對向的下表面之對向部處理前述基板；基板液體處理工序，係對前述基板的前述上表面進行液體處理；以及對向部洗淨工序，係洗淨前述對向部；前述對向部洗淨工序係具有：清洗液供給工序，係對前述基板的前述上表面供給清洗液；液膜形成工序，係於前述基板的前述上表面形成在前述清洗液供給工序中所供給的前述清洗液的液膜；以及洗淨液供給工序，係在前述液膜形成工序中於前述基板的前述上表面形成有前述液膜的狀態下對前述對向部的前述下表面供給洗淨液。 A substrate processing method includes: a processing step of processing the substrate using an opposing portion having a lower surface facing the upper surface of the substrate; a substrate liquid processing step of performing liquid processing on the upper surface of the substrate; And the opposite part washing step is for washing the opposite part; the opposite part washing step includes: a cleaning liquid supplying step for supplying a cleaning liquid to the upper surface of the substrate; and a liquid film forming step for The upper surface of the substrate is formed with a liquid film of the cleaning liquid supplied in the cleaning liquid supply step; and a cleaning liquid supply step includes forming the liquid on the upper surface of the substrate in the liquid film forming step. In a state of the film, a cleaning solution is supplied to the lower surface of the facing portion. 如請求項1所記載之基板處理方法，其中前述基板液體處理工序係包含有用以使前述對向部的前述下表面與前述基板的前述上表面對向並在已使前述對向部的前述下表面與前述基板的前述上表面以水平姿勢旋轉的狀態下進行液體處理之工序。 The substrate processing method according to claim 1, wherein the substrate liquid processing step includes a step of aligning the lower surface of the facing portion with the upper surface of the substrate, and a step of A step of performing a liquid treatment in a state where the surface and the upper surface of the substrate are rotated in a horizontal posture. 如請求項1或2所記載之基板處理方法，其中前述液膜形成工序係包含有用以使前述基板以水平姿勢旋轉之工序； 前述液膜形成工序中的前述基板的旋轉速度係比前述基板液體處理工序中的前述基板的旋轉速度還低速。 The substrate processing method according to claim 1 or 2, wherein the liquid film forming step includes a step for rotating the substrate in a horizontal posture; The rotation speed of the substrate in the liquid film forming step is lower than the rotation speed of the substrate in the substrate liquid processing step. 如請求項1或2所記載之基板處理方法，其中前述液膜形成工序係包含有用以增加對於前述基板的前述上表面之前述清洗液的供給量之工序。 The substrate processing method according to claim 1 or 2, wherein the liquid film forming step includes a step for increasing a supply amount of the cleaning liquid to the upper surface of the substrate. 如請求項1或2所記載之基板處理方法，其中前述基板液體處理工序係包含有：第一基板液體處理工序，係將前述對向部配置於與前述基板對向之對向位置；前述對向部洗淨工序係包含有用以在前述洗淨液供給工序之前將前述對向部配置於比前述對向位置還上方的位置之工序。 The substrate processing method according to claim 1 or 2, wherein the substrate liquid processing step includes: a first substrate liquid processing step in which the facing portion is disposed at a position opposite to the substrate; The facing portion washing step includes a step of arranging the facing portion at a position higher than the facing position before the washing liquid supply step. 如請求項5所記載之基板處理方法，其中前述基板液體處理工序係包含有：第二基板液體處理工序，係將前述對向部配置於比前述對向位置還上方的退避位置；前述對向部洗淨工序係包含有用以在前述洗淨液供給工序之前將前述對向部配置於比前述退避位置還接近前述基板的洗淨位置之工序。 The substrate processing method according to claim 5, wherein the substrate liquid processing step includes: a second substrate liquid processing step in which the facing portion is disposed at a retreat position higher than the facing position; the facing The partial cleaning step includes a step of arranging the facing portion at a cleaning position closer to the substrate than the retracted position before the cleaning liquid supply step. 如請求項1或2所記載之基板處理方法，其中前述清洗液供給工序與前述洗淨液供給工序係並行進行。 The substrate processing method according to claim 1 or 2, wherein the cleaning liquid supply step and the cleaning liquid supply step are performed in parallel. 如請求項1或2所記載之基板處理方法，其中前述清洗液供給工序係在前述洗淨液供給工序之前進行。 The substrate processing method according to claim 1 or 2, wherein the cleaning liquid supply step is performed before the cleaning liquid supply step. 如請求項3所記載之基板處理方法，其中進一步具有：第一對向部旋轉工序，係與前述洗淨液供給工序並行進行，用以使前述對向部以與前述液膜形成工序中的前述基板的前述旋轉速度相同的旋轉速度且以水平姿勢旋轉。 The substrate processing method according to claim 3, further comprising: a first counter-rotating step, which is performed in parallel with the cleaning liquid supply step, so that the counter-rotating portion is in contact with the liquid film forming step. The substrate is rotated in a horizontal posture at the same rotation speed as the rotation speed of the substrate. 如請求項9所記載之基板處理方法，其中進一步具有：第二對向部旋轉工序，係在前述洗淨液供給工序以及前述第一對向部旋轉工序之後進行，用以使前述對向部以比前述液膜形成工序中的前述基板的前述旋轉速度還高速旋轉。 The substrate processing method according to claim 9, further comprising: a second opposing portion rotating step, which is performed after the cleaning liquid supply step and the first opposing portion rotating step, so that the opposing portion is rotated. Rotate at a higher speed than the rotation speed of the substrate in the liquid film forming step. 如請求項10所記載之基板處理方法，其中進一步具有：對向部升降工序，係以前述對向部的前述下表面的高度變得比圍繞前述基板的周圍之罩部的上端還高且變得比在前述基板液體處理工序中對前述基板的前述上表面供給各種液體之各個噴嘴的各個開口還低之方式使前述對向部升降；在已在前述對向部升降工序中調整前述對向部的前述下表面的高度的狀態下進行前述第二對向部旋轉工序。 The substrate processing method according to claim 10, further comprising a step of raising and lowering the facing portion such that a height of the lower surface of the facing portion becomes higher than that of an upper end of a cover portion surrounding a periphery of the substrate. The facing portion is raised and lowered in a manner that is lower than each opening of each nozzle that supplies various liquids to the upper surface of the substrate in the substrate liquid processing step; the facing is adjusted in the facing portion elevating step. The second facing portion rotation step is performed in a state of the height of the lower surface of the portion. 如請求項1或2所記載之基板處理方法，其中前述對向部洗淨工序係在前述液體處理中之用以將前述基板的前述上表面予以撥水化之撥水化處理之前進行。 The substrate processing method according to claim 1 or 2, wherein the facing portion cleaning step is performed before the water repellent treatment for rehydrating the upper surface of the substrate in the liquid treatment. 如請求項1或2所記載之基板處理方法，其中於前述液體處理包含有使用了有機溶劑之處理； 前述對向部係耐有機溶劑性的材質。 The substrate processing method according to claim 1 or 2, wherein the aforementioned liquid processing includes a processing using an organic solvent; The facing portion is made of a material resistant to organic solvents. 如請求項1或2所記載之基板處理方法，其中前述對向部的前述下表面係遠寬於前述基板的上表面。 The substrate processing method according to claim 1 or 2, wherein the lower surface of the facing portion is much wider than the upper surface of the substrate.
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