JP2024005496A - Substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To ensure that a process liquid bouncing back from substrate periphery does not adhere to the substrate during processing by the process liquid.

SOLUTION: A substrate processing device 2 comprises: a support part 32 to which a substrate 9 is attached, with the substrate 9 being in a first support state of being supported horizontally, and that supports an attachment member 81 that expands to the surrounding of the substrate 9; a lifting part 33 that is located in proximity to the periphery of the substrate 9 in the first support state, and that, with a region of the attachment member 81 taken as a substrate periphery part, lifts the substrate 9 relatively to the substrate periphery part while deforming the attachment member 81 in the surrounding of the substrate 9, thereby forming a second support state where the relative position of the substrate 9 to the substrate periphery part is higher than in the first support state; and a process liquid supply part 42 that supplies a process liquid to the top surface of the substrate 9 in the second support state so as to process the top surface. Thus, it is possible to ensure that a process liquid bouncing back from the substrate periphery part does not adhere to the substrate 9 during processing by the process liquid.

SELECTED DRAWING: Figure 4

COPYRIGHT: (C)2024,JPO&INPIT

Description

The present invention relates to a substrate processing apparatus.

In recent years, substrates such as semiconductor substrates have been made thinner by grinding the back surface of the substrate while a carrier substrate is bonded to the front surface of the substrate. After grinding the back surface, grinding distortion is removed by etching. Further, a frame with a film (also called release tape) provided inside is prepared, and the back side of the substrate is adhered to the film inside the frame. Subsequently, the carrier substrate is peeled off from the substrate on the film. Thereafter, the surface of the substrate is cleaned to remove unnecessary materials such as adhesive residue.

In the device of Patent Document 1, the carrier substrate is pulled using a carrier substrate holder, and the carrier substrate is peeled off from the substrate with deformation of the film. In Patent Document 2, a protective film is formed on the exposed surface of a film (adhesive tape) protruding outside the substrate and on the frame, and then the substrate is cleaned with a cleaning liquid. This prevents dissolved residues originating from fillers in the adhesive from adhering to the exposed surface and the frame.

Patent No. 5930401 Japanese Patent Application Publication No. 2013-247299

By the way, when cleaning the surface of the substrate in a substrate processing apparatus after peeling off the carrier substrate, cleaning liquid, which is a processing liquid, is supplied to the surface of the substrate while the frame is supported by the support part, and unnecessary substances are removed from the surface of the substrate. removed from However, the unnecessary materials may adhere to the peripheral portions of the substrate (frame, film, supporting portion, etc.) that are arranged close to the periphery of the substrate. In this case, there is a possibility that the cleaning liquid scattered from the surface of the substrate to the surrounding area bounces around the substrate, and the processing liquid containing unnecessary substances adheres to the substrate, that is, the unnecessary substances re-adhere to the substrate.

Adhesion of processing liquid rebounding from the periphery of the substrate to the substrate can occur even when a frame and film are not used. For example, in a substrate processing apparatus in which the outer edge of the substrate is directly supported by a support part, when the surface of the substrate is treated with a processing liquid, the processing liquid that bounces off the support part, which is the peripheral part of the substrate, adheres to the substrate. may become contaminated. Therefore, there is a need for a method for suppressing the adhesion of the processing liquid that bounces from the periphery of the substrate to the substrate during processing with the processing liquid.

The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to suppress adhesion of the processing liquid that rebounds from the periphery of the substrate to the substrate during processing with the processing liquid.

A first aspect of the present invention is a substrate processing apparatus, in which, in a first support state in which the substrate is supported in a horizontal state, the substrate is attached and a mounting member that extends around the substrate is supported; a support portion that directly supports an outer edge of the substrate; By raising the board relative to the peripheral part of the board while deforming the mounting member around the board, or by releasing the direct support of the board by the support part, and lifting the board. an elevating part that is raised relative to the peripheral part of the substrate to form a second support state in which the relative position of the substrate with respect to the peripheral part of the substrate is higher than the first support state; and a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate in a supported state to process the upper surface.

A second aspect of the present invention is the substrate processing apparatus according to aspect 1, in which the mounting member includes a film that is attached to the lower surface of the substrate and spreads to the outside of the substrate, and a film that surrounds the periphery of the substrate. and a frame to which the substrate is connected, the support portion supports the mounting member in the first support state, and the film is deformed around the substrate in the second support state.

A third aspect of the present invention is the substrate processing apparatus according to aspect 1 or 2, further comprising a shielding plate that covers the upper surface of the substrate in the second support state, and the nozzle of the processing liquid supply section is connected to the shielding plate. established in

Aspect 4 of the present invention is the substrate processing apparatus according to Aspect 1 or 2 (or any one of Aspects 1 to 3), which includes a suction section that sucks the atmosphere above the peripheral area of the substrate. Be prepared for more.

Aspect 5 of the present invention is the substrate processing apparatus according to Aspect 1 or 2 (which may be any one of Aspects 1 to 4), in which a peripheral cleaning solution is provided in which a cleaning liquid is directly supplied to the peripheral area of the substrate. It further comprises a section.

Aspect 6 of the present invention is the substrate processing apparatus of Aspect 1 or 2 (which may be any one of Aspects 1 to 5), wherein the support section holds the mounting member or the substrate. The substrate has a chuck part, and the elevating part forms the second supported state by elevating the opposing part facing the lower surface of the substrate.

Aspect 7 of the present invention is the substrate processing apparatus of Aspect 1 or 2 (which may be any one of Aspects 1 to 6), in which, after supplying the processing liquid to the upper surface of the substrate, The apparatus further includes a substrate rotation mechanism that dries the substrate and the support part by rotating the substrate and the support part in the second support state.

According to the present invention, during processing with a processing liquid, it is possible to suppress the processing liquid that rebounds from the peripheral portion of the substrate from adhering to the substrate.

FIG. 2 is a block diagram showing the configuration of a substrate transfer device. FIG. 3 is a diagram for explaining processing in the substrate transfer device. FIG. 3 is a plan view showing a mounting member to which a board is attached. FIG. 1 is a diagram showing the configuration of a substrate processing apparatus. FIG. 3 is a diagram showing the flow of substrate cleaning processing in the substrate processing apparatus. FIG. 3 is a diagram for explaining cleaning processing of a substrate. FIG. 3 is a diagram for explaining cleaning processing of a substrate. FIG. 3 is a diagram for explaining cleaning processing of a substrate. FIG. 7 is a diagram for explaining cleaning processing of a substrate in a substrate processing apparatus of a comparative example. FIG. 7 is a diagram showing another example of the substrate processing apparatus. FIG. 3 is a diagram for explaining cleaning processing of a substrate. FIG. 3 is a diagram for explaining cleaning processing of a substrate. FIG. 3 is a diagram for explaining cleaning processing of a substrate. FIG. 7 is a diagram showing another example of the substrate processing apparatus. FIG. 7 is a diagram showing another example of the substrate processing apparatus. FIG. 7 is a diagram showing another example of the substrate processing apparatus. It is a figure which shows the substrate processing apparatus in a 2nd support state. FIG. 7 is a diagram showing another example of the substrate processing apparatus. It is a figure which shows the substrate processing apparatus in a 2nd support state. FIG. 7 is a diagram showing another example of the substrate processing apparatus. It is a figure which shows the substrate processing apparatus in a 2nd support state. FIG. 7 is a diagram showing another example of the substrate processing apparatus.

FIG. 1 is a block diagram showing the configuration of a substrate transfer apparatus 1 according to one embodiment of the present invention. The substrate transfer device 1 includes a substrate receiving stage 11, a UV irradiation device 12, an alignment device 13, a frame mount device 14, a peeling device 15, a substrate processing device 2, a substrate storage cassette 16, and a transport mechanism (not shown). (omitted). The transport mechanism is, for example, a transport robot including a motor and the like, and is responsible for transporting the substrate 9 between these structures. Each component of the substrate transfer device 1 is controlled by a control section (not shown) including a CPU or the like.

FIG. 2 is a diagram for explaining processing in the substrate transfer apparatus 1. In the substrate transfer apparatus 1, as shown in the upper part of FIG. 2, a substrate 9 having a carrier substrate 89 bonded to a surface 91 is placed on a substrate receiving stage 11. The substrate 9 is, for example, a semiconductor substrate, and a circuit pattern is formed on the surface 91. The carrier substrate 89 is, for example, a glass substrate or the like, and has approximately the same size as the substrate 9. An adhesive layer 88, which is a layer of adhesive, is provided between the substrate 9 and the carrier substrate 89. As the adhesive for the adhesive layer 88, various adhesive resins can be used, and fillers may be included. Also, organic solvents may be used in preparing the adhesive. The adhesive layer 88 in this processing example contains a light absorber that is decomposed by irradiation with ultraviolet light. As will be described later, irradiation of the adhesive layer 88 with ultraviolet rays reduces the adhesive strength of the adhesive layer 88. As the resin, filler, organic solvent, and light absorber, those described in JP-A-2013-247299 (Patent Document 2 above) can be used, for example.

Before being transported to the substrate transfer device 1, a carrier substrate 89 is bonded to the front surface 91 of the substrate 9, and a back surface 92 of the substrate 9 is ground by a grinding device to make the substrate thin. Further, after grinding the back surface 92, the back surface 92 is etched by a back side etching device to remove grinding distortion. The backside etching apparatus may perform either wet etching or dry etching (plasma etching). Thereafter, the substrate 9 is transported to the substrate transfer device 1 and placed on the substrate receiving stage 11.

In the UV irradiation device 12 of the substrate transfer apparatus 1, the substrate 9 is irradiated with ultraviolet rays (UV) from the carrier substrate 89 side. This reduces the adhesive force in the adhesive layer 88. Subsequently, the alignment device 13 aligns the notch of the substrate 9 in a predetermined direction. Thereafter, in the frame mount device 14, the board 9 is attached to the attachment member 81, as shown in the middle part of FIG.

FIG. 3 is a plan view showing the mounting member 81 to which the board 9 is attached. FIG. 3 shows the substrate 9 from which the carrier substrate 89 has been peeled off, as will be described later. The attachment member 81 is a member to which the substrate 9 is attached, and extends around the substrate 9. Specifically, as shown in the middle part of FIG. 2 and FIG. 3, the mounting member 81 includes a film 82 (also called a release tape) and a frame 83. The film 82 includes a film body and an adhesive layer provided on the film body. The film body is, for example, a resin film such as PVC (polyvinyl chloride), polyolefin, or polypropylene. The back surface 92 of the substrate 9 is stuck to the film 82 by the adhesive layer on the film body. The outer edge of the film 82 is larger than the substrate 9, and the film 82 has a portion that extends to the outside of the substrate 9 over the entire circumference of the substrate 9. The frame 83 has a substantially annular shape surrounding the substrate 9, and the film 82 is connected to the frame 83. The inner edge of the frame 83 is circular, and the inner diameter of the frame 83 is larger than the outer diameter of the substrate 9. This exposes the film 82 around the substrate 9. The frame 83 is made of, for example, metal such as aluminum or stainless steel, or resin. The frame 83 may have an outer shape other than a substantially circular shape, such as a rectangular shape.

In the peeling device 15, the carrier substrate 89 is peeled from the substrate 9, as shown in the middle and lower rows of FIG. In this embodiment, the adhesive force of the adhesive layer 88 is reduced by the irradiation of ultraviolet rays by the UV irradiation device 12, so that the carrier substrate 89 can be easily peeled off. Depending on the adhesive strength of the adhesive layer 88 after UV irradiation, the UV irradiation device 12 may perform the UV irradiation after the substrate 9 is attached to the mounting member 81. The substrate 9 and the mounting member 81 are carried into the substrate processing apparatus 2, and the surface 91 of the substrate 9 is cleaned. As a result, unnecessary substances such as residues of the adhesive layer 88 on the surface 91 are removed. The substrate processing apparatus 2 will be described later. The cleaned substrate 9 and mounting member 81 are carried out from the substrate processing apparatus 2 and stored in the substrate storage cassette 16.

FIG. 4 is a diagram showing the configuration of the substrate processing apparatus 2. As shown in FIG. In FIG. 4, a part of the configuration is shown in a cross section along a plane including a central axis J1, which will be described later. The substrate processing apparatus 2 is a substrate cleaning apparatus that processes (cleans) the substrate 9 by supplying a cleaning liquid, which is a processing liquid, to the substrate 9 . The substrate processing apparatus 2 includes a support unit 3 , a guard 41 , a cleaning liquid supply section 42 , and a suction section 43 . The support unit 3 includes a support base 31 , a chuck section 32 , an elevating section 33 , and a substrate rotation mechanism 36 . The support base 31 is a substantially disk-shaped member centered on a central axis J1 parallel to the up-down direction (vertical direction), and has a substantially horizontal upper surface. The substrate 9 and mounting member 81 carried into the substrate processing apparatus 2 are placed on the upper surface of the support base 31. An upper end of a shaft portion 361 centered on the central axis J1 is fixed to the center of the lower surface of the support base 31. When the substrate rotation mechanism 36 having a motor rotates the shaft portion 361, the support base 31 rotates together with the substrate 9 and the mounting member 81 about the central axis J1.

The chuck portion 32 has a plurality of chuck pins 321. The plurality of chuck pins 321 are arranged on the upper surface of the support base 31 at equal angular intervals in the circumferential direction around the central axis J1. The number of chuck pins 321 is typically three or more. In FIG. 3, a contact portion 322 of the chuck pin 321, which will be described later, is indicated by a two-dot chain line. Each chuck pin 321 has a rotation shaft portion and an abutment portion 322. The rotation shaft portion is a cylindrical portion extending in the vertical direction, and is disposed in a hole provided in the support base 31 and extending in the vertical direction. The chuck pin 321 is rotatably supported with respect to the support base 31 about the rotation shaft. As will be described later, the contact portion 322 is selectively disposed at a position where it contacts the outer edge of the upper surface of the frame 83 and at a position away from the frame 83 by rotation of the chuck pin 321.

The chuck section 32 further includes a ring section 323, a transmission mechanism 324, and a ring lifting mechanism 325. The ring portion 323 is an annular member centered on the central axis J1, and is disposed below the support base 31. The ring portion 323 is supported so as to be movable in the vertical direction by a guide portion (not shown). The transmission mechanism 324 is a link mechanism that connects the ring portion 323 and the rotation shaft portions of the plurality of chuck pins 321. The transmission mechanism 324 rotates the rotation shaft portion in conjunction with the vertical movement of the ring portion 323. When the support base 31 is rotated by the substrate rotation mechanism 36, the ring portion 323 and the transmission mechanism 324 rotate together with the support base 31 about the central axis J1.

The ring lifting mechanism 325 is arranged below the support base 31. The ring lifting mechanism 325 includes, for example, a motor and a ball screw, and the rotation of the motor moves a moving body (nut) in the ball screw in the vertical direction. The ring portion 323 is inserted into the inner ring of the bearing, and the movable body of the ring lifting mechanism 325 is fixed to the outer ring of the bearing. Thereby, the ring portion 323 can be moved in the vertical direction by the ring lifting mechanism 325 while the ring portion 323 is rotatable about the central axis J1. The motor of the ring lifting mechanism 325 is fixed to a case that houses the substrate rotating mechanism 36.

For example, when the ring elevating mechanism 325 positions the ring portion 323 at the first position in the vertical direction, the abutment portions 322 of the plurality of chuck pins 321 touch the outer edge of the upper surface of the frame 83, as shown in FIG. comes into contact with. That is, the plurality of contact parts 322 are arranged at the holding position, and the mounting member 81 is held by the chuck part 32. When the ring lifting mechanism 325 moves the ring portion 323 to the second position in the vertical direction, the rotation shaft portion of each chuck pin 321 rotates, and the contact portion 322 separates from the outer edge of the frame 83. That is, the plurality of contact parts 322 are arranged at the release position, and the holding of the mounting member 81 by the chuck part 32 is released. The above structure of the chuck portion 32 is merely an example, and may be modified as appropriate. For example, an air cylinder or the like may be used as the ring elevating mechanism 325, or a magnet or the like may be used to move the ring portion 323 up and down without contacting the ring elevating mechanism 325.

The elevating section 33 includes an elevating stage 331, a ring section 332, and a ring elevating mechanism 333. The elevating stage 331 is a substantially disk-shaped member centered on the central axis J1, and has a substantially horizontal upper surface. The outer diameter of the elevating stage 331 is approximately the same as or slightly smaller than the substrate 9. A recess is provided in the center of the upper surface of the support base 31, and the entire elevating stage 331 can be placed within the recess. The ring portion 332 is an annular member centered on the central axis J1, and is disposed below the support base 31. The ring portion 332 is supported so as to be movable in the vertical direction by a guide portion (not shown). The elevating stage 331 is connected to the ring part 332 and moves in the vertical direction integrally with the ring part 332. When the support base 31 is rotated by the substrate rotation mechanism 36, the elevating stage 331 and the ring portion 332 rotate together with the support base 31 about the central axis J1.

The ring lifting mechanism 333 is arranged below the support base 31. The ring elevating mechanism 333 includes, for example, an air cylinder and moves the piston rod in the vertical direction. The ring portion 332 is inserted into the inner ring of the bearing, and a piston rod is fixed to the outer ring of the bearing. Thereby, the ring part 332 can be moved in the vertical direction by the ring elevating mechanism 333 while the ring part 332 is rotatable about the central axis J1. The main body of the ring lifting mechanism 333 is fixed to a case that houses the substrate rotation mechanism 36.

In the substrate processing apparatus 2 of FIG. 4, the elevating stage 331 is selectively arranged at a lower position in the recess of the support base 31 and at an upper position protruding above the upper surface of the support base 31. (See the lower part of FIG. 6A described below). When the elevating stage 331 is in the lower position, the upper surface of the elevating stage 331 is at approximately the same height as the upper surface of the support base 31 or slightly lower than the upper surface of the support base 31. The above structure of the elevating section 33 is merely an example, and may be modified as appropriate. For example, a motor or the like may be used as the ring elevating mechanism 333, or a magnet or the like may be used to move the ring portion 332 up and down without contacting the ring elevating mechanism 333.

The guard 41 has a substantially cylindrical shape centered on the central axis J1, and surrounds the entire circumference of the support base 31. The guard 41 is movable in the vertical direction by a lifting mechanism (not shown) having a motor or the like. The cleaning liquid supply unit 42 is a processing liquid supply unit and includes a cleaning liquid nozzle 421 and a cleaning liquid supply source 422. The cleaning liquid nozzle 421 is arranged above the center of the substrate 9 and is connected to a cleaning liquid supply source 422. When the cleaning liquid supply source 422 sends the cleaning liquid to the cleaning liquid nozzle 421, the cleaning liquid is discharged from the cleaning liquid nozzle 421 toward the center of the surface 91 of the substrate 9 facing upward. The cleaning liquid in the substrate processing apparatus 2 is a processing liquid for cleaning the surface 91 of the substrate 9, and is appropriately selected depending on the unnecessary matter (residues of the adhesive layer 88, etc.) adhering to the surface 91. In one example, the cleaning solution includes a terpene-based solvent such as p-menthane. As the cleaning liquid, for example, the one described in Japanese Patent Application Laid-Open No. 2013-247299 (Patent Document 2 mentioned above) can be used. The cleaning liquid nozzle 421 is supported by a nozzle moving mechanism (not shown), and has a position above the support base 31 shown in FIG. 4 (that is, a position above the center of the substrate 9) and a center axis J1. A cleaning liquid nozzle 421 is selectively disposed at a position away from the support base 31 in the radial direction.

The suction unit 43 includes a suction nozzle 431 and a suction mechanism 432. The suction nozzle 431 is arranged outside the outer edge of the substrate 9 and inside the outer edge of the support base 31 in the radial direction. In the example of FIG. 4, the suction nozzle 431 is arranged substantially above the frame 83. Suction nozzle 431 is connected to suction mechanism 432. By driving the suction mechanism 432, the atmosphere around the suction nozzle 431 is suctioned. The suction nozzle 431 is supported by a nozzle moving mechanism (not shown), and the radial position of the suction nozzle 431 can be changed.

FIG. 5 is a diagram showing the flow of cleaning processing for the substrate 9 in the substrate processing apparatus 2. As shown in FIG. 6A to 6C are diagrams for explaining the cleaning process of the substrate 9. FIG. In the cleaning process of the substrate 9, first, the mounting member 81 to which the substrate 9 is attached is carried into the substrate processing apparatus 2 by the transport mechanism of the substrate transfer apparatus 1, and is placed on the support base 31 as shown in the upper part of FIG. 6A. It is placed (step S11). At this time, the elevating stage 331 is placed in the lower position, and the film 82 of the mounting member 81 contacts the upper surface of the support base 31. The elevating stage 331 faces the back surface 92 of the substrate 9 with the film 82 in between. When viewed along the vertical direction (that is, when viewed from above), the entire upper surface of the elevating stage 331 overlaps with the substrate 9.

Subsequently, as shown in the middle part of FIG. 6A, the plurality of contact parts 322 are arranged at the holding position, and the frame 83 of the attachment member 81 is held by the chuck part 32 (step S12). That is, a first support state, which will be described later, is formed. When the mounting member 81 is held by the chuck portion 32, the substrate 9 is horizontal. Then, as shown in the lower part of FIG. 6A, the elevating stage 331 of the elevating section 33 moves from the lower position to the upper position, and the substrate 9 rises (step S13). That is, a second support state, which will be described later, is formed. At this time, since the frame 83 is held by the chuck portion 32, the film 82 is deformed around the substrate 9. In this processing example, the substrate 9 rises by about 5 to 10 mm. The film 82 may be deformed by elastic deformation or plastic deformation.

Here, the state in which the mounting member 81 is supported in step S12 is referred to as a "first support state", and the state in which the board 9 is raised while deforming the mounting member 81 in step S13 is referred to as a "second support state". . Further, the portion of the mounting member 81 and the chuck portion 32 that are arranged close to the outer periphery of the substrate 9 is referred to as a “substrate periphery portion”. In the example of FIG. 6A, the substrate peripheral portion includes the portion of the film 82 around the substrate 9, the frame 83, and the chuck pin 321. When the elevating stage 331 is raised in step S13, the positions of the chuck pins 321 and the frame 83 do not change, so in the second support state, the relative position of the substrate 9 with respect to the substrate periphery is higher than in the first support state. In other words, in the first supported state, the relative position of the substrate 9 with respect to the substrate periphery is lower than in the second supported state. Note that the substrate 9 is supported horizontally also in the second support state. In a preferred processing example, the surface 91 of the substrate 9 is located above the top surface of the frame 83 in the second support state, but the surface 91 of the substrate 9 may be located below the top surface of the frame 83.

When the second support state is established, rotation of the substrate 9 (and support base 31) by the substrate rotation mechanism 36 is started (step S14). The rotation speed of the substrate 9 is, for example, 500 to 800 rpm. In the upper part of FIG. 6B, the arrow A1 indicates the rotation of the substrate 9 (the same applies to other figures). Further, the cleaning liquid nozzle 421 is arranged above the center of the substrate 9 . Then, supply of the cleaning liquid from the cleaning liquid nozzle 421 to the central portion of the front surface 91 of the substrate 9 is started (step S15). On the surface 91, the cleaning liquid spreads toward the outer edge of the substrate 9 due to the centrifugal force caused by the rotation of the substrate 9, and the cleaning liquid is supplied to the entire surface 91. As a result, unnecessary substances adhering to the surface 91 are removed. Further, the cleaning liquid is scattered from the outer edge of the substrate 9 to the surrounding area. That is, the cleaning liquid collides with the periphery of the substrate. At this time, since the relative position of the substrate 9 with respect to the substrate periphery is higher than in the first support state, the cleaning liquid that scatters from the substrate 9 and bounces around the substrate periphery does not adhere to the surface 91 of the substrate 9. suppressed. Note that the peripheral portion of the substrate is also rotating together with the substrate 9, and the cleaning liquid scattered from the peripheral portion of the substrate to the surrounding area is received and collected by the inner peripheral surface of the guard 41 (see FIG. 4) (the same applies hereinafter).

In the substrate processing apparatus 2, in addition to supplying the cleaning liquid, the suction nozzle 431 also starts suctioning the atmosphere above the peripheral portion of the substrate (step S16). For example, the suction nozzle 431 swings between above the exposed film 82 and above the chuck pin 321 in the radial direction. In the upper part of FIG. 6B, arrow A2 indicates the swinging of the suction nozzle 431 (the same applies to other figures). Since the cleaning liquid mist and the like scattered from the periphery of the substrate are collected by the suction nozzle 431, adhesion of the mist and the like to the surface 91 of the substrate 9 is suppressed.

In this processing example, the rotation speed of the substrate 9 is reduced after a predetermined time has elapsed from the start of supply of the cleaning liquid. For example, the rotation speed is changed in the order of 500 rpm, 200 rpm, 10 rpm, and 100 rpm. When the rotational speed of the substrate 9 is low, the cleaning liquid flows from the outer edge of the substrate 9 over the upper surface of the film 82 and moves outward, as shown in the middle part of FIG. 6B. As a result, the peripheral portion of the substrate is also cleaned. After that, as shown in the lower part of FIG. 6B, the supply of the cleaning liquid from the cleaning liquid nozzle 421 to the surface 91 of the substrate 9 is stopped (step S17).

Subsequently, the rotation speed of the substrate 9 is increased, and the substrate 9 is dried (step S18). For example, the rotation speed is sequentially changed to 100 rpm, 300 rpm, and 500 rpm or more. As shown in the upper part of FIG. 6C, even when the substrate 9 is drying, the suction nozzle 431 continues to suck the atmosphere above the substrate periphery, and the cleaning liquid mist etc. scattered from the substrate periphery is transferred to the surface 9 of the substrate 9. It is suppressed from adhering to the surface. In step S18, the peripheral portion of the substrate is also dried.

When the drying of the substrate 9 is completed, the rotation of the substrate 9 is stopped (step S19), and the suction by the suction nozzle 431 and the swinging of the suction nozzle 431 are stopped (step S20). Further, as shown in the middle part of FIG. 6C, the elevating stage 331 moves from the upper position to the lower position, and the substrate 9 descends (step S21). As a result, the relative position of the substrate 9 with respect to the substrate periphery is returned to the state before the elevating stage 331 was placed in the upper position (the state in step S12 shown in the middle part of FIG. 6A). In other words, the substrate 9 is returned from the second supported state to the first supported state. As shown in the middle and lower rows of FIG. 6C, the plurality of abutting portions 322 are placed in the release position, and the holding of the frame 83 of the mounting member 81 by the chuck portion 32 is released. Thereafter, the substrate 9 and the mounting member 81 are carried out from the substrate processing apparatus 2 by the transport mechanism of the substrate transfer apparatus 1, and the cleaning process for the substrate 9 is completed (step S22).

Here, a substrate processing apparatus as a comparative example will be explained. FIG. 7 is a diagram for explaining cleaning processing of the substrate 9 in the substrate processing apparatus 71 of the comparative example. In the substrate processing apparatus 71 of the comparative example, the elevating section 33 is not provided. Therefore, after the mounting member 81 is supported by the chuck pins 72 in step S12 to form the first supported state, the substrate 9 is not raised relative to the peripheral portion of the substrate (that is, the second supported state is established). A cleaning liquid is supplied to the surface 91 of the substrate 9 (without forming it). Therefore, the cleaning liquid rebounding from the peripheral portion of the substrate tends to adhere to the surface 91 of the substrate 9. The cleaning liquid contains unnecessary substances removed from the surface 91 of the substrate 9, and the unnecessary substances will re-adhere to the surface 91.

On the other hand, in the substrate processing apparatus 2, the mounting member 81 is supported by the chuck section 32, which is a support section, in the first support state in which the substrate 9 is supported in a horizontal state. In addition, in the first support state, the elevating section 33 deforms the mounting member 81 around the board 9, with the mounting member 81 and the support section arranged close to the periphery of the board 9 as the board periphery. At the same time, by raising the substrate 9 relative to the substrate periphery, a second support state is formed in which the relative position of the substrate 9 with respect to the substrate periphery is higher than the first support state. Then, in the second support state, the cleaning liquid supply section 42 supplies the cleaning liquid to the upper surface of the substrate 9 (in the above example, the surface 91), thereby processing the upper surface. In the substrate processing apparatus 2, when the substrate 9 is processed with the cleaning liquid, it is possible to suppress the cleaning liquid that bounces from the substrate periphery from adhering to the substrate 9. As a result, it is possible to eliminate the need for repeated cleaning, reduce the amount of cleaning liquid consumed, and reduce the environmental load.

Preferably, the mounting member 81 is affixed to the lower surface of the substrate 9 (in the above example, the back surface 92), surrounds the periphery of the substrate 9, and connects the film 82 to the film 82 that extends outside the substrate 9. A frame 83 is provided. Furthermore, the film 82 is deformed around the substrate 9 in the second supported state. At this time, since the film 82 is inclined radially outward and downward around the substrate 9, it is possible to further suppress the cleaning liquid rebounding from the film 82 from adhering to the substrate 9.

Preferably, a suction section 43 is provided that sucks the atmosphere above the peripheral portion of the substrate. By collecting the mist of the cleaning liquid scattered from the periphery of the substrate by the suction unit 43, it is possible to further suppress the cleaning liquid from adhering to the substrate 9.

Preferably, the support section has a chuck section 32 that holds the attachment member 81, and the elevating section 33 raises an opposing section (elevating stage 331 in the above example) that faces the lower surface of the substrate 9. Thereby, the second supported state can be easily formed.

Preferably, a substrate rotation mechanism 36 is provided, and after supplying the cleaning liquid to the upper surface of the substrate 9, the substrate 9 and the support section are dried by rotating the substrate 9 and the support section in the second support state. Thereby, when the substrate 9 is dried, the cleaning liquid scattered from the substrate 9 can be prevented from rebounding around the substrate 9 and re-adhering to the substrate 9. Note that the relative position of the substrate 9 with respect to the substrate periphery when the substrate 9 is dried may be different from the relative position when the cleaning liquid is supplied. For example, in order to more reliably suppress reattachment of the cleaning liquid when the substrate 9 is drying, the relative position of the substrate 9 with respect to the substrate periphery when the substrate 9 is drying is arranged higher than when the cleaning liquid is being supplied. Good too.

The substrate processing apparatus 2 may be provided with a peripheral cleaning section that cleans the peripheral portion of the substrate. In the example of FIG. 4, the peripheral cleaning section 44 includes a peripheral cleaning nozzle 441 (indicated by a broken line in FIG. 4). The peripheral cleaning nozzle 441 is arranged outside the outer edge of the substrate 9 and inside the outer edge of the support base 31 in the radial direction. In the example of FIG. 4, the peripheral cleaning nozzle 441 is arranged above the peripheral part of the substrate. Peripheral cleaning nozzle 441 is connected to cleaning liquid supply source 422 and cleaning liquid is sent to peripheral cleaning nozzle 441 . As a result, the cleaning liquid is discharged from the peripheral cleaning nozzle 441 toward the peripheral area of the substrate, that is, the cleaning liquid is directly supplied from the peripheral cleaning nozzle 441 to the peripheral area of the substrate. The cleaning liquid supply source 422 is shared by the cleaning liquid supply section 42 and the peripheral cleaning section 44 . The peripheral cleaning nozzle 441 may be connected to a dedicated cleaning liquid supply source, and a different type of cleaning liquid from the cleaning liquid discharged from the cleaning liquid nozzle 421 may be discharged. The peripheral cleaning nozzle 441 is supported by a nozzle moving mechanism (not shown), and the radial position of the peripheral cleaning nozzle 441 can be changed.

In the cleaning process of FIG. 5, for example, while the cleaning liquid is being supplied to the substrate 9 from the cleaning liquid nozzle 421, the cleaning liquid is directly supplied to the peripheral area of the substrate from the peripheral cleaning nozzle 441. Specifically, when starting the supply of the cleaning liquid from the cleaning liquid nozzle 421 to the substrate 9 in step S15, the supply of the cleaning liquid from the peripheral cleaning nozzle 441 to the peripheral part of the substrate is started. Thereby, in parallel with cleaning the front surface 91 of the substrate 9, the peripheral portion of the substrate is cleaned. Like the suction nozzle 431, the peripheral cleaning nozzle 441 swings between, for example, above the exposed film 82 and above the chuck pin 321 in the radial direction. Then, when stopping the supply of the cleaning liquid from the cleaning liquid nozzle 421 to the substrate 9 in step S17, the supply of the cleaning liquid from the peripheral cleaning nozzle 441 to the peripheral part of the substrate is stopped. Note that the supply of the cleaning liquid from the cleaning liquid nozzle 421 to the substrate 9 and the supply of the cleaning liquid from the peripheral cleaning nozzle 441 to the peripheral part of the substrate do not necessarily need to be performed in parallel.

As described above, the preferred substrate processing apparatus 2 is provided with the peripheral cleaning section 44 that directly supplies cleaning liquid to the peripheral area of the substrate. By cleaning the peripheral area of the substrate using the peripheral cleaning section 44, unnecessary substances can be more reliably removed from the peripheral area of the substrate. As a result, together with the formation of the second support state in which the relative position of the substrate 9 with respect to the substrate periphery is higher than the first support state, it is possible to further suppress unnecessary substances from adhering to the substrate 9 again. can.

FIG. 8 is a diagram showing another example of the substrate processing apparatus. In the substrate processing apparatus 2 of FIG. 8, a shielding plate 45, a shielding plate lifting mechanism 451, and an auxiliary gas supply section 46 are added to the substrate processing apparatus 2 of FIG. The other configurations are the same as those in FIG. 4, and the same configurations are denoted by the same reference numerals.

The blocking plate 45 has a disk shape approximately centered on the central axis J1. The blocking plate 45 is arranged above the support base 31. The lower surface of the blocking plate 45 faces the surface 91 of the substrate 9 on the support base 31 in the vertical direction. The lower surface of the blocking plate 45 is substantially parallel to the surface 91 of the substrate 9. The diameter of the blocking plate 45 is approximately the same as or larger than the diameter of the substrate 9, and the entire surface 91 of the substrate 9 is covered by the blocking plate 45. The blocking plate 45 is supported by a blocking plate lifting mechanism 451. The blocking plate elevating mechanism 451 includes, for example, a motor and a ball screw, and moves the blocking plate 45 in the vertical direction. When processing the substrate 9 , the blocking plate 45 is placed close to the surface 91 of the substrate 9 . When the substrate 9 is carried into and out of the substrate processing apparatus 2, the blocking plate 45 is placed at a remote position away from the surface 91 of the substrate 9, and is prevented from interfering with the transport mechanism.

In the blocking plate 45, a hollow portion extending in the vertical direction is provided at a position substantially overlapping with the central axis J1, and the cleaning liquid nozzle 421 of the cleaning liquid supply unit 42 is arranged within the hollow portion. The discharge port of the cleaning liquid nozzle 421 is arranged near the lower surface of the shielding plate 45 and directly faces the center of the surface 91 of the substrate 9 . The space between the outer circumferential surface of the cleaning liquid nozzle 421 and the inner circumferential surface of the hollow portion is a gas flow path, and an auxiliary gas supply source 462 of the auxiliary gas supply section 46 is connected to the gas flow path. Ru. A substantially annular gas outlet 461 surrounding the cleaning liquid nozzle 421 is provided on the lower surface of the blocking plate 45 . When the auxiliary gas supply source 462 supplies a predetermined gas (hereinafter referred to as "auxiliary gas") to the gas flow path, the auxiliary gas is ejected from the gas outlet 461 toward the center of the surface 91 of the substrate 9. be done. The auxiliary gas is typically an inert gas such as nitrogen gas, but it may also be a gas other than inert gas, such as clean air. Note that the blocking plate 45 may be rotatable approximately around the central axis J1.

9A to 9C are diagrams for explaining cleaning processing of the substrate 9 in the substrate processing apparatus 2. FIG. In the cleaning process of the substrate 9, first, the mounting member 81 to which the substrate 9 is attached is carried into the substrate processing apparatus 2, and is placed on the support base 31 as shown in the upper part of FIG. 9A (step S11). . At this time, the shielding plate 45 is arranged at a remote position away from the surface 91 of the substrate 9, and the illustration of the shielding plate 45 is omitted in the upper row of FIG. 9A (the middle and lower rows of FIG. 9A, and (Similarly in the middle and lower rows of FIG. 9C).

Subsequently, as shown in the middle part of FIG. 9A, the plurality of contact parts 322 are arranged at the holding position, and the frame 83 of the attachment member 81 is held by the chuck part 32 (step S12). That is, a first support state is formed. Thereafter, as shown in the lower part of FIG. 9A, the elevating stage 331 moves from the lower position to the upper position, and a second support state is formed in which the relative position of the substrate 9 with respect to the substrate periphery is higher than the first support state. (Step S13). When the second support state is formed, as shown in the upper part of FIG. 9B, rotation of the substrate 9 is started (step S14). The rotation speed of the substrate 9 is, for example, 500 to 800 rpm.

Further, the blocking plate 45 is arranged at a position a predetermined distance (for example, several cm) from the surface 91 of the substrate 9. Thereafter, the supply of the cleaning liquid from the cleaning liquid nozzle 421 to the central portion of the front surface 91 of the substrate 9 is started (step S15). On the surface 91 of the substrate 9, the cleaning liquid spreads toward the outer edge of the substrate 9 due to the centrifugal force caused by the rotation of the substrate 9, and the cleaning liquid is supplied to the entire surface 91. As a result, unnecessary substances adhering to the surface 91 are removed. Further, the cleaning liquid is scattered from the outer edge of the substrate 9 to the surrounding area. That is, the cleaning liquid collides with the peripheral portion of the substrate. At this time, since the upper part of the substrate 9 is covered by the shielding plate 45 and the relative position of the substrate 9 with respect to the substrate periphery is higher than in the first supported state, the cleaning liquid rebounding from the substrate periphery is splashed onto the substrate 9. Adhesion to the surface 91 is suppressed.

In the substrate processing apparatus 2, at the same time as the cleaning liquid is supplied, the suction nozzle 431 starts suctioning the atmosphere above the peripheral portion of the substrate, and the gas ejection port 461 starts ejecting the auxiliary gas (step S16). For example, the suction nozzle 431 swings between above the exposed film 82 and above the chuck pin 321 in the radial direction. The suction nozzle 431 collects cleaning liquid mist and the like that bounces off the periphery of the substrate. Further, in the space between the lower surface of the shielding plate 45 and the surface 91 of the substrate 9, the auxiliary gas flows from the center of the substrate 9 toward the outer edge, thereby suppressing the mist and the like from entering the space. As a result, adhesion of the mist and the like to the surface 91 of the substrate 9 is more reliably suppressed.

In this processing example, after a predetermined period of time has elapsed from the start of supply of the cleaning liquid, as shown in the middle row of FIG. The speed is reduced. For example, the lower surface of the blocking plate 45 is brought close to the surface 91 of the substrate 9 to a position of 7 mm, and the rotational speed is sequentially changed to 200 rpm, 250 rpm, 300 rpm, and 10 rpm. When the rotational speed of the substrate 9 is low, the cleaning liquid flows from the outer edge of the substrate 9 over the upper surface of the film 82 and moves outward. Since the shielding plate 45 is close to the surface 91 of the substrate 9 and a flow of auxiliary gas is formed between the shielding plate 45 and the substrate 9, cleaning liquid, mist, etc. rebounding from the peripheral area of the substrate can be Adhesion to the surface 91 of 9 is more reliably suppressed.

After that, as shown in the lower part of FIG. 9B, the supply of the cleaning liquid from the cleaning liquid nozzle 421 to the surface 91 of the substrate 9 is stopped (step S17). Further, the blocking plate 45 is arranged at a position closer to the surface 91 of the substrate 9 (for example, at a position 4 mm from the surface 91 of the substrate 9). Even in the state shown in the lower part of FIG. 9B, the auxiliary gas continues to be ejected from the gas outlet 461, and the liquid film of the cleaning liquid on the surface 91 of the substrate 9 is spread from the center of the substrate 9 to the outer edge by the auxiliary gas. being pushed towards. At this time, the rotation speed of the substrate 9 is, for example, 50 rpm.

Subsequently, as shown in the upper part of FIG. 9C, the blocking plate 45 is placed at a position closer to the surface 91 of the substrate 9 (for example, at a position 2.5 mm from the surface 91 of the substrate 9). Further, the rotation speed of the substrate 9 is increased, and the substrate 9 is dried (step S18). For example, the rotation speed is changed from 50 rpm to 500 rpm or more. Even when the substrate 9 is drying, the suction nozzle 431 continues to suck the atmosphere above the periphery of the substrate, and the attachment of cleaning liquid mist and the like that bounces off the periphery of the substrate to the surface 91 of the substrate 9 is suppressed.

When the drying of the substrate 9 is completed, the rotation of the substrate 9 is stopped (step S19), and the shielding plate 45 is raised and placed at a remote position away from the surface 91 of the substrate 9. Further, the ejection of the auxiliary gas from the gas ejection port 461, the suction by the suction nozzle 431, and the swinging of the suction nozzle 431 are stopped (step S20). Then, as shown in the middle part of FIG. 9C, the elevating stage 331 moves from the upper position to the lower position, and the substrate 9 is returned from the second supported state to the first supported state (step S21). As shown in the middle and lower rows of FIG. 9C, the plurality of abutting portions 322 are placed in the release position, and the holding of the frame 83 of the mounting member 81 by the chuck portion 32 is released. Thereafter, the substrate 9 and the mounting member 81 are carried out from the substrate processing apparatus 2, and the cleaning process for the substrate 9 is completed (step S22).

As described above, the substrate processing apparatus 2 of FIG. 8 includes the blocking plate 45 that covers the upper surface of the substrate 9 (in the above example, the surface 91) in the second support state, and the cleaning liquid nozzle 421 of the cleaning liquid supply unit 42 It is provided on the blocking plate 45. In this way, in addition to forming the second support state in which the relative position of the substrate 9 with respect to the substrate periphery is higher than the first support state, the use of the blocking plate 45 prevents the cleaning liquid rebounding from the substrate periphery from being absorbed by the substrate 9. It is possible to more reliably suppress adhesion to Note that, similarly to the substrate processing apparatus 2 in FIG. 4, in the substrate processing apparatus 2 in FIG. You can. Thereby, it is possible to further suppress unnecessary substances from adhering to the substrate 9.

10 and 11 are diagrams showing other examples of the substrate processing apparatus 2. FIG. In the substrate processing apparatus 2 of FIG. 10, the blocking plate 45 is not provided, and in the substrate processing apparatus 2 of FIG. 11, the blocking plate 45 is provided. The substrate processing apparatus 2 shown in FIGS. 10 and 11 is provided with a lifting section 34 having a structure different from that of the lifting section 33 shown in FIGS. 4 and 8. The elevating section 34 includes a punching plate 341 and a driving gas supply section 342. The recess 311 provided on the upper surface of the support base 31 is hollow, and the upper opening of the recess 311 is closed by the punching plate 341. The punching plate 341 is arranged at approximately the same height as the upper surface of the support base 31 or slightly below the upper surface of the support base 31. The driving gas supply section 342 can supply driving gas into the recess 311 . The driving gas is a high-pressure gas, such as clean air or an inert gas such as nitrogen gas.

In the substrate processing apparatus 2 of FIGS. 10 and 11, the frame 83 of the mounting member 81 is held by the chuck portion 32, thereby forming the first supported state. Subsequently, the drive gas is supplied from the drive gas supply section 342 into the recess 311, thereby causing the film 82 of the mounting member 81 to deform around the substrate 9, and the board 9 to rise. As a result, a second support state is formed in which the relative position of the substrate 9 with respect to the substrate periphery is higher than the first support state. After the cleaning liquid is supplied to the surface 91 of the substrate 9, the driving gas in the recess 311 is discharged to the outside. Thereby, the substrate 9 is returned from the second supported state to the first supported state. As described above, in the substrate processing apparatus 2 of FIGS. 10 and 11, it is possible to easily form the second support state using the lifting section 34 having a simple structure.

FIG. 12 is a diagram showing another example of the substrate processing apparatus 2. As shown in FIG. In the substrate processing apparatus 2 of FIG. 12, a convex portion 312 is provided on the upper surface of the support base 31. The convex portion 312 is a substantially disk-shaped member and has an outer diameter that is substantially the same as or slightly smaller than the substrate 9 . The mounting member 81 to which the substrate 9 is attached is placed on the convex portion 312 . As a result, the film 82 of the attachment member 81 is supported from below by the convex portion 312, which is a support portion, and a first supported state is formed. In the example of FIG. 12, the mounting member 81 is not held by the chuck portion 32 in the first supported state.

Subsequently, as shown in FIG. 13, the plurality of contact parts 322 of the chuck part 32 press the frame 83 against the upper surface of the support base 31, so that the frame 83 is lowered while the film 82 is deformed around the substrate 9. do. In other words, the portion of the film 82 around the substrate 9 and the frame 83 are used as the substrate periphery, and the chuck section 32, which is an elevating section, raises the substrate 9 relative to the substrate periphery, thereby increasing the substrate periphery. A second support state is formed in which the relative position of the substrate 9 to the substrate 9 is higher than the first support state. In the substrate processing apparatus 2 of FIG. 13 as well, by supplying the cleaning liquid to the surface 91 of the substrate 9 in the second support state, it is possible to suppress the cleaning liquid rebounding from the substrate periphery from adhering to the substrate 9.

Next, a cleaning process for the substrate 9 that is not attached to the attachment member 81 will be explained. Here, the substrate processing apparatus 2 of FIG. 14, which has the same configuration as the substrate processing apparatus 2 of FIG. 4, is used. When carrying in the substrate 9, the substrate 9 is placed on the support base 31, and the plurality of contact parts 322 of the chuck part 32 are arranged at the holding position. As a result, the outer edge portion of the substrate 9 is directly held by the chuck portion 32, which is a support portion, and a first supported state is formed. In the substrate 9 that is not attached to the mounting member 81, the portion of the chuck portion 32, such as the plurality of chuck pins 321, that is arranged close to the outer periphery of the substrate 9 becomes the substrate periphery.

In the substrate processing apparatus 2 of FIG. 14, a predetermined process is performed on the surface 91 of the substrate 9 in the first support state. In one example, a chemical solution such as an etching solution is supplied to the surface 91 of the substrate 9, and the surface 91 is treated with the chemical solution. The chemical liquid may be discharged from the cleaning liquid nozzle 421 (see FIG. 15), or other nozzles may be used. In the first support state, a process that does not use a liquid such as a chemical solution may be performed. Of course, the substrate 9 may rotate together with the support base 31.

When the processing in the first support state is completed, the plurality of contact parts 322 are placed in the release position, and the direct holding of the outer edge of the substrate 9 by the chuck part 32 is released. Subsequently, as shown in FIG. 15, the elevating stage 331 of the elevating section 33 moves from the lower position to the upper position, and the substrate 9 rises. In other words, the second support state is formed in which the substrate 9 is raised relative to the substrate periphery such as the plurality of chuck pins 321, and the relative position of the substrate 9 relative to the substrate periphery is higher than the first support state. Then, the cleaning liquid is supplied from the cleaning liquid nozzle 421 to the surface 91 of the substrate 9 in the second supported state. As a result, when cleaning the substrate 9, the cleaning liquid that bounces off the substrate periphery is prevented from adhering to the substrate 9. By providing a vacuum chuck or the like for suctioning the substrate 9 on the upper surface of the elevating stage 331, it is also possible to rotate the substrate 9 as in the above example. The atmosphere above the peripheral portion of the substrate may be sucked by the suction nozzle 431, or the cleaning liquid may be directly supplied to the peripheral portion of the substrate from the peripheral cleaning nozzle 441 (see FIG. 4). The drying of the substrate 9 and the like are the same as in the above example.

As described above, in the substrate processing apparatus 2 of FIG. 14, in the first support state in which the substrate 9 is supported in a horizontal state, the outer edge of the substrate 9 is directly supported by the chuck section 32, which is a support section. Subsequently, by lifting the substrate 9 relative to the substrate periphery while releasing the direct support of the substrate 9 by the support section, the relative position of the substrate 9 with respect to the substrate periphery becomes higher than in the first supported state. A second upper support state is formed. Then, the cleaning liquid supply section 42 supplies the cleaning liquid to the upper surface of the substrate 9 in the second support state, thereby processing the upper surface. In the substrate processing apparatus 2, during processing using a cleaning liquid, it is possible to suppress the cleaning liquid that rebounds from the peripheral portion of the substrate from adhering to the substrate 9. Of course, the blocking plate 45 may be provided in the substrate processing apparatus 2 of FIG. 14.

As shown in FIG. 16, the chuck section 32 may be omitted in the substrate processing apparatus 2. In the example of FIG. 16, the substrate 9 is placed on the support base 31, and a first support state is formed. In the first support state, the outer edge of the substrate 9 is directly supported from below by the support base 31 as a support part. Further, on the upper surface of the support base 31, the area around the elevating stage 331 (that is, the outer edge of the support base 31) becomes the substrate peripheral area. When the predetermined process on the surface 91 of the substrate 9 in the first support state is completed, the elevating stage 331 of the elevating section 33 moves from the lower position to the upper position, and the substrate 9 rises, as shown in FIG. As a result, the relative position of the substrate 9 to the outer edge of the support base 31, which is the substrate periphery, is higher than the first support state, and a second support state is formed. By supplying the cleaning liquid to the surface 91 of the substrate 9 in the second supported state, it is possible to suppress the cleaning liquid rebounding from the peripheral portion of the substrate from adhering to the substrate 9.

The substrate processing apparatus 2 described above can be modified in various ways.

In the above embodiment, when the substrate 9 is attached to the mounting member 81, as shown in FIG. 4 and FIG. In the case where the lower surface of the mounting member 81 is held by suction, the peripheral portion of the substrate may include only the portion of the mounting member 81. Furthermore, when the board 9 is not attached to the mounting member 81, the peripheral part of the board includes a support part, as shown in FIGS. 14 and 16. Therefore, the peripheral portion of the substrate may be a portion of the mounting member 81 and/or the support portion. Note that when the board 9 is attached to the mounting member 81, the peripheral portion of the board includes a portion of the mounting member 81 arranged around the board 9. Furthermore, when the substrate 9 is not attached to the mounting member 81, the peripheral portion of the substrate includes a portion that directly contacts the outer edge of the substrate 9 in the first supported state.

In the substrate processing apparatus 2, a processing liquid other than the cleaning liquid may be supplied to the upper surface of the substrate 9 in the second support state. In this case as well, it is possible to prevent the processing liquid rebounding from the peripheral portion of the substrate from adhering to the substrate 9 during processing with the processing liquid.

Depending on the design of the substrate processing apparatus 2 in which the blocking plate 45 is provided, the blocking plate 45 may have a size that covers substantially the entire mounting member 81. Thereby, it is possible to suppress the cleaning liquid rebounding from the periphery of the mounting member 81 from adhering to the mounting member 81.

The type, structure, posture, etc. of each nozzle used in the substrate processing apparatus 2 may be changed as appropriate. For example, as shown in FIG. 18, the suction nozzle 431 may be a slit nozzle extending in the radial direction, and the discharge direction of the cleaning liquid in the peripheral cleaning nozzle 441 may be inclined toward the outside in the radial direction. Further, a nozzle may be provided to eject clean air, inert gas, etc. to the peripheral area of the substrate.

The substrate processed in the substrate processing apparatus 2 is not limited to a semiconductor substrate, and may be a glass substrate or other substrate. Further, the substrate processing apparatus 2 may be used to process a substrate having an external shape different from a disk shape.

The configurations of the above embodiment and each modification may be combined as appropriate unless mutually contradictory.

2 Substrate processing apparatus 9 Substrate 32 Chuck section 33, 34 Lifting section 36 Substrate rotation mechanism 42 Cleaning liquid supply section 43 Suction section 44 Peripheral cleaning section 45 Blocking plate 81 Mounting member 82 Film 83 Frame 91 Front surface 92 Back surface 331 Lifting stage 421 Cleaning liquid nozzle

Claims (7)

A substrate processing device,
a support portion that supports a mounting member that extends around the substrate while the substrate is attached in a first support state in which the substrate is supported in a horizontal state, or that directly supports an outer edge of the substrate;
In the first support state, while deforming the mounting member around the substrate, a portion of the mounting member and/or the support portion, which is disposed close to the periphery of the substrate, is defined as a substrate periphery portion. By raising the substrate relative to the peripheral portion of the substrate, or by lifting the substrate relative to the peripheral portion of the substrate while releasing direct support of the substrate by the support portion. an elevating part that forms a second support state in which the relative position of the substrate with respect to the substrate peripheral portion is higher than the first support state;
a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate in the second supported state to process the upper surface;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The mounting member is
a film attached to the lower surface of the substrate and extending outside the substrate;
a frame surrounding the substrate and to which the film is connected;
Equipped with
the support part supports the attachment member in the first support state,
A substrate processing apparatus, wherein the film is deformed around the substrate in the second supported state. The substrate processing apparatus according to claim 1 or 2,
further comprising a shielding plate that covers the upper surface of the substrate in the second supported state,
A substrate processing apparatus, wherein a nozzle of the processing liquid supply section is provided on the blocking plate. The substrate processing apparatus according to claim 1 or 2,
A substrate processing apparatus further comprising a suction unit that suctions the atmosphere above the peripheral portion of the substrate. The substrate processing apparatus according to claim 1 or 2,
A substrate processing apparatus further comprising a peripheral cleaning section that directly supplies cleaning liquid to the peripheral area of the substrate. The substrate processing apparatus according to claim 1 or 2,
The support part has a chuck part that holds the mounting member or the substrate,
A substrate processing apparatus characterized in that the elevating section forms the second supported state by elevating an opposing section facing a lower surface of the substrate. The substrate processing apparatus according to claim 1 or 2,
The method further includes a substrate rotation mechanism that dries the substrate and the support section by rotating the substrate and the support section in the second support state after supplying the processing liquid to the upper surface of the substrate. Substrate processing equipment.

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