JP2001102297A - Substrate processor and method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase uniformity of processing, when a substrate, e.g. a wafer is subjected to development processing, etc. SOLUTION: While a wafer W is held at a wafer holding part 2 and temperature control liquid A is jetted from a flow passage 41 to the peripheral edge region on the reverse surface of the wafer, a developer D is applied to the wafer surface. Then while the temperature control liquid A is jetted from the flow passage 41 to the peripheral edge region on the wafer reverse surface, the wafer W is rotated for a specific time to carry out development. Consequently, the wafer holding part 2 which has large heat capacity in a region near by the center part of the wafer W heats the wafer W to form a liquid film of temperature control liquid A in the peripheral edge region of the wafer W, which is thereby heated. At this time, since the wafer W is rotated, the developer D is stirred to suppress the generation of the temperature distribution of the developer D in the surface of the wafer W, and then development unevenness due to a temperature difference is suppressed, and a uniform developing process can be performed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a substrate processing apparatus and method for performing substrate processing such as development processing on a substrate.

[0002]

2. Description of the Related Art Semiconductor wafers (hereinafter referred to as "wafers")
A mask for forming a predetermined pattern on the surface of a liquid crystal display glass substrate (LCD substrate) is formed by applying a resist on the surface of a substrate such as a wafer and then applying light, electron beam or ion beam to the resist surface. It is obtained by irradiating and developing.

Here, the developing treatment is to dissolve a part irradiated with light or the like in the exposure step or a part not irradiated with an aqueous alkali solution or the like. Conventionally, for example, it is performed as follows. That is, first, as shown in FIG. 12A, a substrate, for example, a wafer W is suction-held on a spin chuck 10 having, for example, a vacuum suction function, and a rod-shaped supply nozzle 11 having a large number of discharge holes is moved to the wafer W. It is arranged at the center, and then, as shown in FIG.
While supplying the developing solution D from 1 to the wafer surface, the wafer W
Is rotated by 180 degrees, so that the developer D is loaded on the resist film. Then, as shown in FIG. 12C, the wafer W is stopped for 60 seconds while the rotation of the wafer W is stopped. This is a method in which a rinsing liquid is supplied to the surface to wash away the developing liquid.

[0004]

However, for example, I
In the case where a line resist is used, development unevenness occurs in the above-described developing method, and the developed line width varies depending on the portion. For example, the line width is deviated by about 4 nm between the vicinity of the center of the wafer and the peripheral edge. There is a problem. Considering the cause, the degree of progress of the development depends on the temperature of the developer D.
It is considered that a temperature distribution has occurred in. That is, although the temperature of the developer D is adjusted to, for example, about 23 ° C., the moisture contained in the developer D evaporates while the wafer W is being poured and left standing, thereby causing the latent heat of the developer D to rise. Therefore, as shown in FIG. 13, the temperature of the developer D decreases with time.

On the other hand, the spin chuck 10 which holds the vicinity of the center of the wafer W moves up and down and rotates while holding the wafer W, and therefore has a certain size. In order to eliminate the temperature influence from a motor (not shown) for driving the spin chuck 10, for example, the temperature is controlled by water control.
The temperature is kept at about 3 ° C. Therefore, the heat capacity of the spin chuck 10 is large, and the spin chuck 10
It is considered that the degree of temperature decrease of the developing solution D is different between the portion that is in contact with the portion and the portion that is not in contact, and the temperature near the center of the wafer is less likely to decrease than at the peripheral portion.

For this reason, at the start of rinsing, a temperature difference of the developing solution D, for example, of about 1 ° C. occurs between the vicinity of the center of the wafer and the peripheral portion, thereby causing unevenness in the developing state and adversely affecting the finished dimensions. It is presumed that a problem has occurred.

The present invention has been made under such circumstances, and an object of the present invention is to make the temperature of the processing liquid substantially uniform within the surface of the substrate to prevent the occurrence of processing unevenness due to the temperature difference of the processing liquid. An object of the present invention is to provide a substrate processing apparatus and a method thereof that suppress the processing and improve the uniformity of the processing.

[0008]

SUMMARY OF THE INVENTION Accordingly, a substrate processing apparatus according to the present invention includes a substrate holding section for holding a substrate, a processing liquid supply section for supplying a processing liquid to the substrate, and a substrate processing apparatus. A temperature controller for heating the opposite surface of the substrate, and holding the substrate supplied with the processing liquid in the substrate holder for a predetermined time while heating the opposite surface of the substrate by the temperature controller. It is characterized by doing. In this case, for example, the substrate holding unit holds the vicinity of the center of the surface opposite to the surface to be processed of the substrate, and the temperature control unit is a peripheral region outside the holding region of the substrate holding unit on the surface opposite to the surface to be processed of the substrate. Is to be heated.

In such an apparatus, in a substrate processing method for performing processing by supplying a processing liquid to a substrate, a step of holding the substrate on a substrate holding unit and supplying the processing liquid to the substrate;
Holding the substrate supplied with the processing liquid in the substrate holding unit for a predetermined time while heating the opposite surface of the substrate by the temperature control unit. .

[0010] With this configuration, the substrate supplied with the processing liquid is held for a predetermined time by the substrate holding unit while the opposite surface of the substrate is heated by the temperature control unit.
The area near the center of the substrate is heated by the substrate holding section, and the peripheral area of the substrate is heated by the temperature control section. Thereby, the change in the temperature of the processing liquid on the substrate is substantially uniform in the plane of the substrate, and the occurrence of processing unevenness caused by the temperature difference between the processing liquids is suppressed, and the uniformity of the processing can be improved.

Here, the temperature control section may be a temperature control liquid supply section for supplying a temperature control liquid, for example, to a position opposite to the surface to be processed of the substrate, for example, at a position equally divided in a circumferential direction. A heating unit for heating the surface opposite to the surface to be processed can be used.

In the substrate processing apparatus, the step of providing the substrate holding portion so as to be rotatable about a vertical axis and supplying the processing liquid to the substrate and / or the step of holding the substrate for a predetermined time may include rotating the substrate. It may be done while doing,
In this case, the processing liquid on the substrate is agitated by the inertial force of the rotation of the substrate, so that the temperature of the processing liquid on the substrate is more uniform in the plane of the substrate, and the uniformity of processing is improved.

Further, the processing liquid supply section may have a supply hole formed along the substrate, and may be provided rotatably relative to the substrate holding section. Further, as a specific example of the substrate treatment, a development treatment using a developer as a treatment liquid can be given.

[0014]

FIG. 1 is a longitudinal sectional view of a developing apparatus to which the present invention is applied. In FIG. 1, reference numeral 2 denotes an area near the center of a wafer W as a substrate so that a surface to be processed faces upward. It is a wafer holding unit made of, for example, resin for holding the wafer W in a horizontal state, rotating the wafer W around a vertical axis, and moving the wafer W up and down. The wafer holding unit 2 serves as a substrate holding unit and has, for example, a vacuum suction function. The wafer holding unit 2 is rotated around a vertical axis via a rotation shaft 22 by a driving unit 21 in which a lifting mechanism and a motor are combined. It is configured to be freely and vertically movable. In this manner, the wafer W is moved between the processing position sucked and held by the wafer holding unit 2 shown in FIG. 2 by the wafer holding unit 2 and the transfer position of the wafer W above the processing position indicated by a dashed line in the drawing. And can be held up and down freely and rotatably.

The periphery of the wafer holding portion 2 surrounds the periphery of the wafer W at the processing position, and when the processing liquid, for example, the developer supplied on the wafer is shaken off, the liquid scatters around. In order to prevent this, a circular cylindrical cup 3 is provided. The cup 3 includes an outer cup 31 and an inner cup 32. When the outer cup 31 prevents scattering of the processing liquid, its upper end is located above the transfer position of the wafer W. When the processing liquid is applied, the lifting mechanism (not shown) is configured to be able to move up and down so that the upper end is located below the transfer position of the wafer W.

The upper end of the inner cup 32 is located below the transfer position of the wafer W inside the outer cup 31 and above the wafer W when the wafer W is in the processing position. It is provided as follows. The inner cup 32 is inclined upward and inward on the side of the wafer W, and is located at the processing position below the wafer W in order to prevent the processing liquid from flowing to the back side of the wafer W. An annular convex portion 33 is provided so as to be in contact with or not in contact with the peripheral edge of the back surface of the wafer W, and is formed so as to be inclined upward from the outside of the wafer W toward the convex portion 33.

In two places of the inner cup 32, for example, the temperature control liquid A is applied to a peripheral area on the back side of the wafer W (an area outside the holding area when the wafer W is held by the wafer holding unit 2). For example, a flow path 41 of a temperature control liquid A forming a temperature control liquid supply unit for supplying temperature control water is formed.
Are provided at intervals of about 180 °, for example, in order to supply the temperature-adjusted liquid A to a position that divides the peripheral region on the back surface side of the wafer W into two equal parts in the circumferential direction.

Here, for example, the projection 33 of the inner cup 32 is used.
Is an inclined surface 34 inclined slightly downward toward the center of the wafer as shown in FIG. 2, for example.
The flow path 41 is formed such that the discharge port 41a (see FIG. 7) is located on an inclined surface inside the convex part 33, for example. The other end of the discharge port 41a of the flow path 41 is connected to the temperature control liquid A through supply pipes 42 and 43, for example, at 25 ° C.
It is connected to a common temperature-adjusted liquid tank 44 in which temperature-adjusted water adjusted to a temperature of 27 ° C. is stored. Thereby, the temperature-adjusted liquid A adjusted to a predetermined temperature is passed through the flow path 41,
The liquid film of the temperature control liquid A is supplied between the back surface of the wafer W and the inclined surface 34 of the wafer holding unit 2, and a liquid film of the temperature control liquid A is provided in a region near the portion sandwiched between the back surface of the wafer W and the inclined surface 34. Is formed.

Further, a drainage passage 34 for the processing liquid is provided in the cup 3.
And a discharge path 35 also serving as an exhaust path and a liquid discharge path, and the discharge path 35 is connected to gas-liquid separation means (not shown).

Above the wafer W at the processing position vacuum-adsorbed to the wafer holding unit 2, a nozzle 5 forming a processing liquid supply unit for supplying a developing solution D as a processing liquid to the surface of the wafer W is provided. Is provided. This nozzle 5 is shown in FIG.
As shown in (a) and (b), for example, a nozzle main body 51 formed in a horizontally elongated rod shape and a lower surface of the nozzle main body 51 are provided for discharging a developer along a radial direction on a wafer surface. The nozzle body 51 is provided with a supply hole 52.
The supply hole 52 is configured to supply the developer D to the vicinity of a center line (a line extending in the radial direction passing through the center of the wafer W) on the wafer surface.

The nozzle 5 is held by a nozzle holding section 53 as shown in FIG.
4, and can be moved up and down by an elevating mechanism (not shown). Thus, the nozzle 5 can be moved between a standby position outside the wafer holding unit 2 and an upper position substantially above the center of the wafer holding unit 2 so as not to be in the way when the wafer W is loaded and unloaded. , And can be moved up and down between the upper position and a developer supply position which is a position lowered from the above position.

The nozzle 5 is connected to a developer storage tank (not shown) through a supply pipe (not shown). Further, the developing device is provided with a developing solution D on the surface of the wafer W.
And a rinsing nozzle 55 for supplying a rinsing liquid R for rinsing. This rinsing nozzle 55 is
For example, it is configured substantially the same as the nozzle 5 described above, and is held by the nozzle holding unit 53 so that it can be moved between a standby position outside the wafer holding unit 2 and a supply position for supplying the rinsing liquid R onto the wafer. It has become.

Next, an example in which an embodiment of the method of the present invention performed using the above-described apparatus is applied to a developing process will be described with reference to FIGS. First, as shown in FIG. 5A, the wafer holding unit 2 is raised to the transfer position, and the exposed wafer W on which the resist film is formed is removed.
The wafer is transferred onto the wafer holding unit 2 by a transfer arm (not shown), and is vacuum-sucked to the wafer holding unit 2. As a method of pressing the wafer W against the wafer holding unit 2, for example, a mechanical chuck that presses the periphery of the wafer W mechanically may be used.

Then, as shown in FIG. 5B, while the temperature-adjusted liquid A is discharged from the flow path 41 formed in the inner cup 32 to the back side of the wafer W, the nozzle 5 at the standby position is moved to the wafer holding section. The developing solution D is discharged from the nozzle 5 by moving to the supply position via the upper position of the wafer 2 to supply the developing solution D to the vicinity of the center line of the wafer W, and the rotation speed of the wafer holding unit 2 is set to, for example, about 30 rpm. To carry out liquid replenishment of the developer D. That is, at the processing position, the supply hole 5 of the nozzle 5
The developer D supplied to the wafer surface from the nozzle 5 at the tip of the nozzle 2
, And in this state, the wafer W is
When the developer D is supplied from the supply hole 52 to the wafer surface while being rotated by 80 degrees, the diffusion of the developer D by the centrifugal force of rotation and the extension of the developer D by the supply hole 52 of the nozzle 5 cause the surface of the wafer W to be spread. The developing solution D is applied to the whole, and the liquid is filled.

At this time, the circumferential direction of the back side of the wafer W
The temperature control liquid supplied between the rear surface side of the wafer W and the inclined surface 34 of the wafer holding unit 2 toward the two equally-divided positions is substantially rotated all around the wafer W by rotation of the wafer W ( 360
7), an annular liquid film of the temperature control liquid A is formed in the peripheral region on the back surface side of the wafer W, for example, as shown in FIG. Here, the discharge port 41a of the flow path 41 is formed on the inclined surface 34 of the wafer holding unit 2, and the inclined surface 34 is located near the back surface side of the wafer W at the processing position. As described above, when the wafer W is rotated, the position of the inclined surface 34 corresponding to the rear surface of the wafer W is moved, whereby the wafer W is rotated. A liquid film of the temperature control liquid A having a predetermined width equal to or slightly larger than the width of the inclined surface 34 is formed in a predetermined peripheral region of the entire circumference on the back surface side of W.

Subsequently, as shown in FIG.
Is moved to the standby position while the temperature control liquid A is discharged from the flow path 41 to the back side of the wafer W.
The development is performed by rotating the wafer holder 2 at a low speed of, for example, about 10 rpm for a second. Therefore, the wafer W
The development is performed in a state in which the liquid film of the temperature control liquid A is formed in a predetermined peripheral region of the entire periphery on the back surface side.

After the development as described above, FIG.
As shown in (a), the rinsing nozzle 5 at the standby position
5 is moved to a supply position via a position above the wafer holding unit 2, and the rinsing liquid R is discharged from the rinsing nozzle 55 while rotating the wafer holding unit 2 to perform cleaning. Next, as shown in FIG. 6B, the surface of the wafer is dried by rotating the wafer W at a high speed, and thereafter, the wafer holding unit 2 is raised to the transfer position of the wafer W to transfer the wafer W to the transfer arm (not shown). Hand over to

Here, when the wafer W is transferred to the wafer holding unit 2 and the nozzle 5 and the rinsing nozzle 55 are moved to the upper part of the wafer, the upper end of the outer cup 31 is placed on the wafer W.
At the time of supplying the developing solution D or the rinsing solution R to the wafer W, at the time of developing, and at the time of drying,
A predetermined process is performed with the upper end of the outer cup 31 positioned above the transfer position of the wafer W.

In such a developing method, the development of the developing solution is performed while supplying the temperature control liquid to the peripheral region on the back surface side of the wafer W, so that the temperature distribution of the developing solution D Is less likely to occur and a highly uniform developing process can be performed.

That is, the region near the center of the wafer W held by the wafer holding section 2 is approximately
Since the temperature is adjusted to about 3 ° C., the wafer is heated by contact with the wafer holder 2. On the other hand, in the peripheral region on the back surface side of the wafer W, about 25 ° C.
Since the liquid film of the temperature control liquid adjusted to about 27 ° C. is formed, the peripheral region is also warmed. Here, the temperature of the temperature control liquid is higher than that of the wafer holding part 2 because the heat capacity of the wafer holding part 2 is larger. Will be adjusted to approximately the same temperature.

As described above, since the temperature in the vicinity of the center and the peripheral area of the wafer W are adjusted to be substantially the same, the temperature difference of the developer D on these portions of the wafer W is eliminated, and the rotation of the wafer W is further reduced. As a result, the developer D on the wafer is agitated by the inertial force of rotation, so that the developer D in the central area and the peripheral area of the wafer W and the developer D in the boundary area between the central area and the peripheral area Are mixed, and as a result, the temperature of the developer D on the wafer becomes substantially uniform.

As a result, the development is performed in a state where the temperature of the developing solution D is substantially uniform over the surface of the wafer, so that the occurrence of development unevenness due to the temperature difference is suppressed, thereby reducing the dimension of the development line width. The change is suppressed, and the uniformity of the developing process is improved. An I-line resist is actually applied and a predetermined pattern is applied.
When the developing process was performed on the wafer W exposed in the shape of the wafer W by the above-described developing device, there was almost no deviation in the developing line width between the vicinity of the center of the wafer W and the peripheral portion, and the uniform developing process was performed. It was recognized that it could be done.

Next, another example of the present invention will be described with reference to FIG. The difference between this example and the development device described above is that
Instead of forming the flow path 41 of the temperature control liquid in the inner cup 32,
That is, a heater 6 serving as a heating unit which is a temperature control unit is provided. Specifically, the heater 6 is formed of, for example, a resistance heating wire, is provided in the vicinity of the inclined surface 34 of the inner cup 32 over the entire circumference of the inner cup 32, and is provided on the back side of the wafer W. The vicinity of the peripheral region is heated to, for example, a temperature of about 23 ° C.

Even in such a developing device, the heater 6
Thus, while the peripheral area on the back surface side of the wafer W is heated, the reservoir of the developer D and the development are performed while the wafer W is rotated. As a result, the peripheral region on the back side of the wafer W is heated to a temperature of about 23 ° C., so that the development of a temperature distribution of the developer on the wafer surface is suppressed as in the above-described example, and a highly uniform developing process It can be performed.

Next, an example of a coating / developing apparatus in which a developing apparatus used for carrying out the developing method according to the present invention is incorporated in a unit will be described with reference to FIGS. 9 and 10. FIG. 9 and 10, reference numeral 7 denotes a loading / unloading stage for loading / unloading a wafer cassette. For example, a cassette C containing 25 sheets is placed by an automatic transfer robot, for example. A transfer arm 70 for the wafer W is provided in a region facing the loading / unloading stage 7 so as to be freely rotatable in the X and Y directions and θ (rotation about a vertical axis). Further, behind the transfer arm 70, a coating / developing system unit U1 is located on the right side, for example, as viewed from the loading / unloading stage 7, and heating / cooling is located on the left side, the front side, and the rear side. System units U2 and U
3 and U4, respectively, and for transferring the wafer W between the coating / developing system unit and the heating / cooling system unit, for example, freely movable up and down, left and right, movable back and forth, and around a vertical axis. A rotatable wafer transfer arm MA is provided. However, in FIG. 9, the unit U2 and the wafer transfer arm MA are not drawn for convenience.

In the coating / developing system unit, for example, two developing units 71a are provided in an upper stage, and two coating units 71b are provided in a lower stage. In a heating / cooling system unit, a heating unit, a cooling unit, a hydrophobizing unit, and the like are vertically arranged. The above parts including the coating / developing system unit and the heating / cooling system unit are cleared.
An exposure device 73 is connected to the rear side of the clean track via an interface unit 72. The interface unit 72 is, for example, a wafer transfer arm 7 configured to be movable up and down, movable left and right, back and forth, and rotatable around a vertical axis.
4 transfers the wafer W between the clean track and the exposure device 73.

The flow of wafers in this apparatus will be described. First, a wafer cassette C containing a wafer W is loaded into the loading / unloading stage 7 from the outside, and a wafer transfer arm is loaded.
The wafer W is taken out of the cassette C by the
The wafer is transferred to the wafer transfer arm MA via a transfer table, which is one of the shelves of the heating / cooling unit U3. Next, after the hydrophobic treatment is performed in the processing section of one shelf in the unit U3, the resist liquid is applied by the application unit 71b to form a resist film. The wafer W coated with the resist film is heated by a heating unit and then sent to an exposure device 73 via an interface unit 72, where exposure is performed via a mask corresponding to the pattern.

Thereafter, the wafer W is heated by the heating unit and then cooled by the cooling unit.
The wafer is sent to 1a for development processing to form a resist mask. Thereafter, the wafer W is returned to the cassette C on the loading / unloading stage 7.

In the above, in the present invention, the substrate is not limited to a wafer, but may be a glass substrate for a liquid crystal display, and may be applied to a coating process other than the developing process. Further, as long as the flow path 41 of the temperature control liquid supplies the temperature control liquid to the peripheral region on the back surface side of the wafer W, the quantity, shape, mounting position, and the like are not limited to the above-described configuration.
For example, it may be configured in a ring shape. Further, as the temperature control section, the heating by the heater 6 and the supply of the temperature control liquid from the flow path 41 may be used in combination. Furthermore, a warm air blower that blows warm air instead of the temperature control liquid may be provided.

Further, the development may be performed by stopping the rotation of the wafer W, the heating of the back surface of the wafer W by the temperature control unit may be stopped when the developer is filled, or the developer may be filled. At any time or during development, instead of performing heating by the temperature control unit continuously during these processes, heating by the temperature control unit may be performed during a part of the processing time. If the wafer W is rotated to perform the development, and the heating is continuously performed by the temperature control unit at the time of the filling of the developing solution or during the development, the temperature control effect becomes higher and uniform processing can be performed.

Further, as shown in FIG.
Further, another flow path 141 may be provided inside. In general, the temperature of the wafer W decreases as it approaches the outer periphery. Therefore, the supply of the temperature-adjusted liquid is started first from the flow path 41, and the supply of the temperature-adjusted liquid is started from the flow path 141 a predetermined time later, whereby the wafer W The temperature can be made more uniform. In addition, channel 4
The same effect can be obtained by making the temperature of the temperature control liquid supplied from 1 higher than the temperature of the temperature control liquid supplied from the flow path 141. Further, with respect to the channel 141, the temperature-adjusted liquid supplied from the channel 41 is used as a suction channel for the wafer W.
A similar effect can be obtained even if the wire is drawn inside the rear surface of the substrate.

[0042]

According to the present invention, the degree of temperature change of the processing liquid in the plane of the substrate is made uniform, and the uniformity of the temperature of the processing liquid in the plane of the substrate is increased. The occurrence of uneven processing can be suppressed, and processing with high uniformity can be performed.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of a developing device when the present invention is applied to a developing process.

FIG. 2 is a sectional view showing a flow path of a temperature control liquid used in the developing device.

FIG. 3 is a perspective view and a bottom view showing a nozzle used in the developing device.

FIG. 4 is a plan view showing the developing device.

FIG. 5 is a process chart showing the operation of the developing device.

FIG. 6 is a process chart showing the operation of the developing device.

FIG. 7 is a bottom view and a sectional view showing the operation of the developing device.

FIG. 8 is a sectional view showing another example of the developing device when the present invention is applied to a developing process.

FIG. 9 is a perspective view showing an example of a coating / developing device incorporating the developing device.

FIG. 10 is a plan view showing an example of a coating / developing device incorporating the developing device.

FIG. 11 is a partial cross-sectional view illustrating an example of a developing device according to another embodiment of the present invention.

FIG. 12 is a process chart showing a conventional developing method.

FIG. 13 is a characteristic diagram showing a temperature change of a conventional developer.

[Explanation of symbols]

 2 Wafer holder 3 Cup 31 Outer cup 32 Inner cup 41, 141 Flow path 42, 43 Temperature control liquid supply pipe 44 Temperature control liquid tank 5 Nozzle 6 Heater W Semiconductor wafer D Developer A Temperature control liquid

Claims (17)

[Claims] 1. A substrate holding section for holding a substrate, a processing liquid supply section for supplying a processing liquid to the substrate, and a temperature control section for heating an opposite surface of the substrate to be processed. A substrate processing apparatus comprising: holding a substrate to which a processing liquid has been supplied for a predetermined time while heating the opposite surface of the substrate by the temperature control unit. 2. The substrate holding section holds a portion near a center of a surface opposite to a surface to be processed of the substrate, and the temperature control portion is provided on a surface opposite to a surface to be processed of the substrate, outside a holding region of the substrate holding portion. The substrate processing apparatus according to claim 1, wherein the peripheral region is heated. 3. The substrate processing apparatus according to claim 1, wherein the temperature control unit is a temperature control liquid supply unit that supplies a temperature control liquid to a surface of the substrate opposite to a surface to be processed. 4. The substrate processing apparatus according to claim 3, wherein the temperature control liquid supply unit supplies the temperature control liquid to a position equally divided in a circumferential direction on a surface opposite to a surface to be processed of the substrate. 5. The substrate processing apparatus according to claim 1, wherein the temperature control unit is a heating unit that heats a surface of the substrate opposite to a surface to be processed. 6. The substrate processing apparatus according to claim 1, wherein the temperature control unit includes a hot air blowing unit that blows hot air to a surface of the substrate opposite to a surface to be processed. 7. The substrate holding section holds the vicinity of the center of the surface opposite to the surface to be processed of the substrate, and the temperature control portion is located on the surface opposite to the surface to be processed of the substrate, outside the holding region of the substrate holding portion. The substrate processing apparatus according to claim 1, further comprising a first temperature control liquid supply unit that supplies a temperature control liquid to a peripheral region of the substrate processing apparatus. 8. The temperature control part is a peripheral area outside a holding area of the substrate holding part on a surface opposite to a surface to be processed of the substrate, and the temperature control part is provided by the first temperature control liquid supply part. The substrate processing apparatus according to claim 7, further comprising a second temperature-adjusted liquid supply unit that supplies the temperature-adjusted liquid to a region inside the region to which the liquid is supplied. 9. The substrate processing apparatus according to claim 8, wherein the first temperature control liquid supply unit starts supplying the temperature control liquid before the second temperature control liquid supply unit. . 10. The temperature control liquid supplied from the first temperature control liquid supply section is higher in temperature than the temperature control liquid supplied from the second temperature control liquid supply section. The substrate processing apparatus according to claim 8. 11. The temperature control part is a peripheral area outside a holding area of the substrate holding part on a surface opposite to a processing surface of the substrate, and the temperature control part is provided by the first temperature control liquid supply part. 11. A temperature control liquid suction section for suctioning a temperature control liquid supplied by the first temperature control liquid supply section, in a region inside a region to which the temperature control liquid is supplied. 13. A substrate processing apparatus according to 12. The substrate holding part is rotatably provided around a vertical axis. The opposite side of the substrate is heated by the temperature control part, and the substrate supplied with the processing liquid is supplied to the substrate holding part. The substrate processing apparatus according to any one of claims 1 to 11, wherein the substrate is held for a predetermined time while being rotated. 13. The processing liquid supply section has a supply hole formed along a substrate, and is provided rotatably relative to the substrate holding section. The substrate processing apparatus according to any one of the above. 14. The substrate processing apparatus according to claim 1, wherein the processing liquid is a developing liquid. 15. A substrate processing method for supplying a processing liquid to a substrate and performing processing by supplying the processing liquid to the substrate by holding the substrate on a substrate holding unit and controlling the temperature of the opposite surface of the substrate. And holding the substrate supplied with the processing liquid in the substrate holding unit for a predetermined time while heating in the unit. 16. The step of supplying a processing liquid to the substrate,
16. The substrate processing method according to claim 15, wherein the method is performed while heating the opposite surface of the substrate by a temperature control unit. 17. The substrate processing method according to claim 15, wherein the step of supplying the processing liquid to the substrate and / or the step of holding the substrate for a predetermined time are performed while rotating the substrate.