JP5080885B2 - Substrate processing apparatus and processing chamber cleaning method - Google Patents

Description

  The present invention relates to a substrate processing apparatus for processing a substrate using a processing liquid, and a method for cleaning the inside of a processing chamber provided in the substrate processing apparatus. Substrates to be processed in the substrate processing apparatus include, for example, semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, and magneto-optical disks. Substrates, photomask substrates and the like are included.

  In the manufacturing process of a semiconductor device or a liquid crystal display device, there is a single-wafer type substrate processing apparatus that processes substrates one by one in order to perform processing with a processing liquid on the surface of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel. Sometimes used. In this single-wafer type substrate processing apparatus, a substrate is rotated while being held horizontally in a processing chamber surrounded by side walls, while processing liquid is supplied to the substrate, whereby processing with the processing liquid is performed. To be applied.

In such a substrate processing apparatus, the processing liquid scattered from the substrate and adhering to the inner surface of the side wall of the processing chamber may become droplets, which may cause substrate contamination. Therefore, in order to prevent the processing liquid from dropping near the opening for carrying the substrate into and out of the processing chamber, a cleaning liquid discharge nozzle for injecting the cleaning liquid is provided in the processing chamber, and the cleaning liquid from the cleaning liquid discharge nozzle It has been proposed to wash away the treatment liquid adhering to the side wall near the opening (see Patent Document 1).
Japanese Patent Laid-Open No. 10-107000

However, since the inside of the processing chamber is cleaned using the cleaning liquid, the cleaning liquid attached to the side wall of the processing chamber after cleaning may fall on the substrate passing through the opening and contaminate the substrate.
SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a processing chamber cleaning method capable of preventing substrate contamination by a cleaning liquid for cleaning the processing chamber.

In order to achieve the above object, the invention according to claim 1 is formed in the side wall, surrounded by the side wall (1), for processing the substrate (W) with a processing liquid, and on the side wall, An opening (17) through which the substrate passes when the substrate is carried into or out of the processing chamber, a shutter (18) for opening and closing the opening, and the vicinity of the upper part of the shutter in the closed state (21, 29, 30) and a cleaning gas discharge nozzle (34) for discharging a drying gas toward the vicinity of the upper part (21, 29, 30) of the shutter in the closed state. with the door, the cleaning liquid discharge nozzle, from the side near the top of said shutter in a closed state, characterized Rukoto for discharging a cleaning liquid to substantially along the direction in the upper side of the shutter, a substrate processing apparatus.

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to this configuration, the processing liquid adhering to the vicinity of the upper portion of the closed shutter is washed away by the cleaning liquid. Then, the cleaning liquid used for cleaning is removed by the drying gas. For this reason, the processing liquid and the cleaning liquid can be removed from the vicinity of the upper portion of the closed shutter. In order to perform cleaning and drying in the closed state of the shutter, when the substrate is opened and the substrate passes through the opening, the processing liquid or the like is placed near the top of the shutter or on the side wall adjacent to the top of the opening. Cleaning liquid droplets are not attached. Therefore, it is possible to prevent the processing liquid and the cleaning liquid from falling toward the substrate passing through the opening. Therefore, contamination of the substrate can be prevented.
In addition, the cleaning liquid is discharged in a direction substantially along the upper side of the shutter from the cleaning liquid discharge nozzle on the side of the upper side of the shutter (substantially on the extended line). For this reason, the flow of the cleaning liquid is formed along the upper side of the shutter. Thereby, the processing liquid adhering to the vicinity of the upper portion of the closed shutter can be efficiently removed.

Here, the vicinity of the upper portion of the closed shutter includes not only the upper portion of the shutter but also peripheral members and side walls adjacent to the upper portion of the opening.
In order to prevent the substrate passing through the opening from being contaminated by the processing liquid, it is conceivable to provide a receiving part for receiving the processing liquid falling on the upper part of the opening. On the other hand, in the configuration in which the vicinity of the upper part of the shutter in the closed state is cleaned with the cleaning liquid and the cleaning liquid is removed by the drying gas, the substrate can be prevented from being contaminated by the processing liquid without providing the receiving portion. If the receiving part is omitted, the cost can be reduced.

A second aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein a hook (25) for receiving the falling liquid is provided on the upper portion of the opening.
According to this configuration, the liquid in which the processing liquid or the cleaning liquid falls from the upper part of the shutter or the upper part of the opening is received by the scissors. For this reason, even if the removal of the processing liquid and the cleaning liquid from the vicinity of the upper portion of the shutter in the closed state is insufficient, it is possible to prevent the processing liquid and the cleaning liquid from contaminating the substrate.

Therefore, it is possible to shorten the discharge time of the drying gas. In this case, the throughput of the substrate processing can be improved by shortening the discharge time of the drying gas.
The invention according to claim 3 is characterized in that the side wall above the opening is provided with a gutter (30) for receiving the liquid flowing down toward the opening along the inner surface of the side wall. A substrate processing apparatus according to claim 1 or 2.

According to this configuration, the processing liquid attached to the inner surface of the side wall above the opening portion flows down toward the upper portion of the opening portion along the inner surface of the side wall by its own weight. This treatment liquid is received by the ridge. For this reason, the approach of the processing liquid to the upper side wall of the opening is suppressed. Thereby, the fall of the process liquid on a board | substrate can be suppressed further.
According to a fourth aspect of the present invention, the ridge has an upper surface and a lower surface extending along the upper side of the opening, and the cleaning liquid discharge nozzle is disposed on one side of the upper portion of the shutter in the closed state. A first cleaning liquid discharge nozzle (32) for discharging the cleaning liquid toward the upper surface of the ridge, and the one side of the upper portion of the shutter in the closed state, and disposed on the upper portion of the shutter and the lower surface of the ridge The substrate processing apparatus according to claim 3, further comprising a second cleaning liquid discharge nozzle (33) for discharging the cleaning liquid toward the head.
According to this configuration, the cleaning liquid from the first cleaning liquid discharge nozzle flows on the upper surface of the ridge in a direction along the side wall. Also, the cleaning liquid from the second cleaning liquid discharge nozzle flows in the direction along the side wall near the upper part of the shutter and the lower surface of the ridge.

Invention 請 Motomeko 5 wherein, the drying gas discharge nozzle is characterized in that from the side near the top of said shutter in a closed state, to discharge the drying gas in the direction substantially along the upper side of the shutter, It is a substrate processing apparatus as described in any one of Claims 1-4.

According to this configuration, the drying gas is discharged in the direction substantially along the upper side of the shutter from the drying gas discharge nozzle that is substantially on the extended line of the upper side of the shutter. For this reason, a flow of the drying gas is formed along the upper side of the shutter. Thereby, the cleaning liquid adhering to the vicinity of the upper portion of the closed shutter can be efficiently removed.
The invention according to claim 6 further includes a resist stripping solution supplying means for supplying a resist stripping solution to the surface of the substrate in the processing chamber. The substrate processing apparatus according to one item.

According to this configuration, the resist stripping solution scattered from the substrate adheres to the inner surface of the side wall of the processing chamber. With the cleaning liquid from the cleaning liquid discharging means, the resist stripping liquid adhering to the vicinity of the upper part of the shutter can be washed away well.
In order to prevent the substrate passing through the opening from being contaminated by the processing liquid, it is conceivable to provide a receiving part for receiving the processing liquid falling from the vicinity of the upper part of the shutter at the upper part of the opening. However, since the resist stripping solution has a high viscosity, the resist stripping solution received by the receiving portion may not be smoothly discharged and overflows from the receiving portion and drops as a droplet onto the substrate, which may cause contamination. There is.

  On the other hand, in the configuration in which the vicinity of the upper portion of the shutter in the closed state is cleaned using the cleaning liquid, the residue removing liquid is washed away well by the cleaning liquid. Therefore, the resist stripping solution does not fall. Accordingly, even when the substrate is subjected to a resist removal process using a resist stripping solution in the processing chamber, the substrate passing through the opening can be reliably prevented from being contaminated by the resist stripping solution. .

The invention described in claim 7 includes a processing chamber (2) surrounded by the side wall (1) and a shutter (18) for opening and closing an opening formed in the side wall, and the substrate accommodated in the processing chamber. Is a method of cleaning the inside of the processing chamber, comprising a processing chamber (2) surrounded by a side wall (1), and a substrate (W ) accommodates, in a substrate processing apparatus for performing processing with a processing solution for the substrate, a method of cleaning the processing chamber, in the process chamber, the side near the top of said shutter in a closed state from the side, a cleaning liquid discharge step of discharging the cleaning liquid substantially along the direction in the upper side of the shutter (S5), after the cleaning liquid ejecting step, near the top of the shutter in a closed state Only, characterized in that it comprises a drying gas discharging step for discharging a drying gas (S7) and a processing chamber cleaning method.

  According to this method, it is possible to achieve the same effect as the effect described in relation to the first aspect.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus according to an embodiment of the present invention.
The substrate processing apparatus becomes unnecessary from the surface of the wafer W after ion implantation processing or dry etching processing for injecting impurities into the surface of a semiconductor wafer (hereinafter simply referred to as “wafer”) W as an example of a substrate. It is a single-wafer type apparatus used for processing for removing the resist.

  The substrate processing apparatus has a processing chamber 2 surrounded by a side wall 1. In the processing chamber 2, the wafer W is held almost horizontally, and a spin chuck 3 that rotates the wafer W around a substantially vertical rotation axis passing through the center thereof, and a surface of the wafer W held by the spin chuck 3. In contrast, the SPM nozzle 4 for supplying SPM (sulfuric acid / hydrogen peroxide mixture) and the surface of the wafer W held on the spin chuck 3 are DIW (deionized water). DIW nozzle 5 for supplying the purified water) is accommodated.

  The spin chuck 3 is provided at substantially equal intervals at a plurality of locations on the periphery of the motor 6, a disk-shaped spin base 7 that is rotated around the vertical axis by the rotational driving force of the motor 6, and the wafer. And a plurality of clamping members 8 for clamping W in a substantially horizontal posture. Thus, the spin chuck 3 keeps the wafer W in a substantially horizontal posture by rotating the spin base 7 by the rotational driving force of the motor 6 while the wafer W is held by the plurality of holding members 8. In this state, it can be rotated around the vertical axis together with the spin base 7.

  The SPM nozzle 4 is attached to the tip of an SPM arm 10 that extends substantially horizontally above the spin chuck 3. The SPM arm 10 is supported by an SPM arm support shaft 11 extending substantially vertically on the side of the spin chuck 3. An SPM nozzle drive mechanism 12 is coupled to the SPM arm support shaft 11, and the SPM arm support shaft 11 is rotated by the driving force of the SPM nozzle drive mechanism 12 to swing the SPM arm 10. Be able to.

An SPM supply pipe 13 is connected to the SPM nozzle 4 so that high-temperature SPM is supplied through the SPM supply pipe 13. An SPM valve 14 for switching between supply and stop of supply of SPM to the SPM nozzle 4 is interposed in the middle of the SPM supply pipe 13.
The DIW nozzle 5 is disposed above the spin chuck 3 with the discharge port directed toward the center of the wafer W. A DIW supply pipe 15 is connected to the DIW nozzle 5, and DIW as a rinsing liquid is supplied through the DIW supply pipe 15. A DIW valve 16 for switching between supply and stop of DIW supply to the DIW nozzle 5 is interposed in the middle portion of the DIW supply pipe 15.

  In the side wall 1 of the processing chamber 2, an opening 17 for carrying in and out the wafer W into the processing chamber 2 is formed. A substrate transfer robot TR is disposed outside the processing chamber 2 so as to face the opening 17. The substrate transfer robot TR accesses the hand into the processing chamber 2 through the opening 17 and places an unprocessed wafer W on the spin chuck 3 or removes the processed wafer W from the spin chuck 3. Be able to. In relation to the opening 17 formed in the side wall 1, a shutter 18 for opening and closing the opening 17 is provided inside the processing chamber 2.

FIG. 2 is a front view of the opening 17 as viewed from the inside of the processing chamber 2. 3 and 4 are cross-sectional views taken along the section line AA of FIG.
The opening 17 is formed in a horizontally long rectangular shape when viewed from the front. The upper and lower sides of the opening 17 are formed along the horizontal direction, and both sides (left side and right side) of the opening 17 are formed along the vertical direction. A seal member 22 such as an O-ring is attached to the peripheral edge of the opening 17 over the entire circumference. The seal member 22 is supported by a rail 23 disposed on the peripheral edge of the opening 17 over the entire circumference.

  The shutter 18 is formed in a substantially rectangular plate shape, and is disposed along the side wall 1. A shutter body 19, a protrusion 20 that protrudes from the four sides of the shutter body 19 toward the side wall 1, and a shutter. And an upright portion 21 rising upward from the upper side of the main body 19. The shutter 18 is opened and closed by an opening / closing mechanism 40 (see FIGS. 3 and 4), which will be described later, between an open state in which the upper half of the opening 17 is opened and a closed state in which the opening 17 is closed. Yes. In FIG. 2, the shutter 18 in the closed state is shown.

  In the closed state of the shutter 18, the tip of the protruding portion 20 is in close contact with the seal member 22. Thereby, it is possible to prevent the atmosphere in the processing chamber 2 from leaking while the opening 17 is closed by the shutter 18. The protrusion 20 includes an upper protrusion 29 extending along the upper side of the opening 17. In the present embodiment, the upper portion of the shutter 18 is configured by the upright portion 21 and the upper protruding portion 29.

  Above the opening 17, a gutter 30 is provided for receiving the liquid flowing down toward the opening 17 along the inner surface of the side wall 1. The collar 30 is formed so as to protrude obliquely upward and inward from the side wall 1 immediately above the upper side of the opening 17. The flange 30 extends along the upper side of the opening 17 from at least one end of the opening 17 (the left end shown in FIG. 2) to the other end (the right end shown in FIG. 2). Is formed. For this reason, the liquid adhering to the inner surface of the side wall 1 can be prevented from entering the side wall 1 near the upper side of the opening 17.

The liquid received by the upper surface of the ridge 30 flows along the upper side of the ridge 30 in the direction in which the ridge 30 extends (left side or right side shown in FIG. 2), and both ends of the heel 30 (left end or right end shown in FIG. 2). ). The lower end side of the collar 30 is located immediately above the upper protrusion 29 of the shutter 18 in the closed state.
In the processing chamber 2, the cleaning liquid is discharged toward the upper surface of the basket 30 on one side (the right side shown in FIG. 2) of the upper side of the shutter 18 in the closed state (the horizontal direction along the side wall 1). A first cleaning liquid discharge nozzle 32 for discharging, a second cleaning liquid discharge nozzle 33 for discharging a cleaning liquid toward the upper portion of the shutter 18 and the lower surface of the ridge 30, and an N toward the upper portion of the shutter 18 and the upper and lower surfaces of the ridge 30. and N ₂ gas discharge nozzle 34 for discharging the ₂ gas. A cleaning liquid from a cleaning liquid supply source is supplied to the first cleaning liquid discharge nozzle 32 and the second cleaning liquid discharge nozzle 33 via a cleaning liquid valve 35. Examples of the cleaning liquid include DIW, electrolytic ion water, carbonated water, reduced water, organic solvent, hydrogen peroxide solution, dilute hydrochloric acid, and the like. The N ₂ gas discharge nozzle 34, through the N ₂ gas valve 37, N ₂ gas from the N ₂ gas supply source is adapted to be supplied.

The first cleaning liquid discharge nozzle 32 is arranged with its discharge port facing the upper surface of the ridge 30 on an extension line in the extending direction of the ridge 30. Therefore, the cleaning liquid from the first cleaning liquid discharge nozzle 32 flows on the upper surface of the bowl 30 in the direction in which the bowl 30 extends (horizontal and along the side wall 1).
The second cleaning liquid discharge nozzle 33 has a discharge port on the upper portion of the shutter 18 (the upright portion 21 and the upper protrusion portion 29) and the lower surface of the flange 30 on a substantially extended line in the extending direction of the upper protrusion portion 29 (or the flange 30). It is arranged toward the. Therefore, the cleaning liquid from the second cleaning liquid discharge nozzle 33 flows in the direction (horizontal and along the side wall 1) in which the upright portion 21 and the upper protrusion 29 extend in the vicinity of the upper portion of the shutter 18 and the lower surface of the flange 30.

The N ₂ gas discharge nozzle 34 is disposed with its discharge port facing the ridge 30 on a substantially extension line in the direction in which the ridge 30 extends. Therefore, N ₂ gas from the N ₂ gas discharge nozzle 34, near the upper and lower surfaces of the upper and eaves 30 of the shutter 18, the raised portion 21 and the extending direction of the upper protruding portion 29 (horizontal in and along the side wall 1) Flowing.
A flange 24 is provided on the peripheral edge of the opening 17. The flange 24 is formed in an inverted U shape in front view, and extends along the upper edge flange 25 extending along the upper side of the opening 17 and the side of one side of the opening 17 (left side shown in FIG. 2). A side ridge 26 extending, and a side ridge 27 extending along a side on one side of the opening 17 (the right side shown in FIG. 2) are provided. A flow groove 28 for flowing the received liquid is formed on the bottom surface of the ridge 24 along the direction in which the ridge 24 extends.

In the closed state of the shutter 18 (see FIG. 3), the tip of the upper protruding portion 29 is located immediately above the upper edge 25. Further, in the open state of the shutter 18 (see FIG. 4), the lower end side of the collar 30 is located immediately above the upper edge collar 25.
If liquid adheres to the lower surface of the ridge 30, the upper surface of the upper protruding portion 29, or the outer surface of the upright portion 21 (the surface facing the inner surface of the side wall 1), the liquid drops when the shutter 18 is opened. There is a fear. These falling liquids are received by the upper edge 25.

The liquid received by the upper side ridge 25 flows through the side ridges 26 and 27 through the flow groove 28 and is discharged from the lower ends of the side ridges 26 and 27. Since the upper side ridge 25 is formed so as to cover the entire upper side of the opening 17, the locus drawn by the wafer W passing through the opening 17 can be covered. The flange 24 is provided integrally with the rail 23.
The opening / closing mechanism 40 for opening and closing the shutter 18 is connected to the shutter 18, and includes a horizontal movement cylinder 41 for moving the shutter 18 forward and backward in a direction approaching / separating from the side wall 1, and a horizontal movement cylinder 41. A horizontal movement cylinder support member 42 to be supported, and a horizontal movement cylinder 41 and an elevation cylinder 43 for raising and lowering the horizontal movement cylinder support member 42 are provided. The lifting cylinder 43 has a main body 47 fixed to the outer surface of the side wall 1 of the processing chamber 2. The horizontal movement cylinder support member 42 supports the horizontal movement cylinder 41 so that the rod 44 of the horizontal movement cylinder 41 protrudes and retracts along a direction perpendicular to the side wall 1.

  When it is time to open the shutter 18, the rod 44 of the horizontal movement cylinder 41 is advanced from the main body 45. With the advancement of the rod 44, the shutter 18 in the closed state (position indicated by a solid line in FIG. 3) moves away from the closed state to the opening 17 (in a direction perpendicular to the side wall 1 and inside the processing chamber 2). It slides toward a retracted position (a position indicated by a two-dot chain line in FIG. 3) located in the direction of heading. Further, the rod 46 of the lifting cylinder 43 is immersed in the main body 47. By retracting the rod 46, the shutter 18 at the retracted position (position indicated by a two-dot chain line in FIG. 3) is lowered, and the shutter 18 is opened (position illustrated in FIG. 4). In the open state of the shutter 18, the upper half of the opening 17 is opened.

  When the timing for closing the shutter 18 is reached, the rod 46 of the elevating cylinder 43 is advanced from the main body 47, and the shutter 18 is moved up to the retracted position (position indicated by a two-dot chain line in FIG. 3). Then, the rod 44 of the horizontal movement cylinder 41 is immersed in the main body 45. Due to the immersion of the rod 44, the shutter 18 in the retracted position (the position indicated by the two-dot chain line in FIG. 3) slides in the direction approaching the opening 17, and the shutter 18 is closed (the position indicated by the solid line in FIG. 3). It becomes.

FIG. 5 is a block diagram showing an electrical configuration of the substrate processing apparatus.
The substrate processing apparatus 1 includes a control device 50 having a configuration including a microcomputer.
The control device 50 is connected with the motor 6, the SPM nozzle drive mechanism 12, the horizontal movement cylinder 41, the lifting cylinder 43, the cleaning liquid valve 35, the N ₂ gas valve 37, the SPM valve 14 and the DIW valve 16 as control targets. Yes.

FIG. 6 is a flowchart for explaining the flow of resist removal processing in the substrate processing apparatus.
During the resist removal process, the controller 50 drives the horizontal movement cylinder 41 and the lifting cylinder 43 to open the closed shutter 18 (step S1). Thereafter, the wafer W after the ion implantation processing is carried into the processing chamber 2 through the opening 17 by the transfer robot TR (step S2). This wafer W has not undergone a process for ashing the resist, and the resist is present on the surface thereof.

  The wafer W is held on the upper surface of the spin chuck 3 with its surface facing upward. After the wafer W is held on the spin chuck 3, the control device 50 drives the horizontal movement cylinder 41 and the lifting cylinder 43 to close the shutter 18. Further, the control device 50 drives the motor 6 to rotate the spin chuck 3 at a constant liquid processing rotation speed at a constant speed. Further, the control device 50 controls the SPM nozzle drive mechanism 12 to move the SPM nozzle 4 from the standby position set on the side of the spin chuck 3 to above the wafer W held on the spin chuck 3. Let

  After starting the rotation of the wafer W, the control device 50 controls the SPM nozzle driving mechanism 12 so that the SPM nozzle 4 is held on the spin chuck 3 from the standby position set on the side of the spin chuck 3. Move above W. Then, the control device 50 opens the SPM valve 14 and discharges SPM from the SPM nozzle 4 toward the surface of the rotating wafer W (S3: SPM processing).

On the other hand, the control device 50 controls the SPM nozzle drive mechanism 12 to swing the arm 10 within a predetermined angle range. As a result, the supply position on the surface of the wafer W to which the SPM from the SPM nozzle 4 is guided is in an arc shape intersecting with the rotation direction of the wafer W within a range from the rotation center of the wafer W to the peripheral edge of the wafer W. Move back and forth while drawing a trajectory.
The SPM supplied to the surface of the wafer W under the centrifugal force generated by the rotation of the wafer W spreads over the entire surface of the wafer W. The strong oxidizing power of SPM supplied to the surface of the wafer W acts on the resist, whereby the resist is removed from the surface of the wafer W.

After the reciprocating movement of the SPM supply position is performed a predetermined number of times, the control device 50 closes the SPM valve 14 and stops the discharge of SPM from the SPM nozzle 4. Further, the control device 50 controls the SPM nozzle driving mechanism 12 to return the SPM nozzle 4 to the retracted position on the side of the spin chuck 3.
Next, the control device 50 opens the DIW valve 16 while continuing to rotate the wafer W. Thereby, DIW is discharged from the DIW nozzle 5 toward the center of the surface of the rotating wafer W (S4: rinse process). The SPM on the surface of the wafer W is washed away by the DIW supplied onto the surface of the wafer W.

  After the SPM process in step S3, SPM scattered laterally from the wafer W may adhere to the inner surface of the side wall 1 of the processing chamber 2, the inner surface of the shutter 18, the upper and lower surfaces of the eaves 30, and the like. Further, the SPM rebounds on the surface of the wafer W to become mist, and this mist of SPM may adhere to the inner surface of the side wall 1 of the processing chamber 2, the inner surface of the shutter 18, the upper and lower surfaces of the flange 30, and the like.

The SPM adhering to the inner surface of the side wall 1 flows down along the side wall 1 by its own weight. This SPM is received by the bag 30. For this reason, the SPM is prevented from entering the upper surface of the upper protrusion 29, the outer surface of the upright portion 21, and the lower surface of the collar 30.
However, the SPM attached to the upper surface of the upper protrusion 29, the outer surface of the upright portion 21, or the lower surface of the collar 30 may fall during the opening operation of the shutter 18. Further, since the SPM has a high viscosity, the SPM stopped in the middle of the ridge 30 may overflow from the ridge 30 and fall when the shutter 18 is opened.

  Therefore, in this substrate processing apparatus, an in-chamber cleaning process is performed in which the SPM adhering to the upper part of the shutter 18 in the closed state (upper protrusion 29, upright part 21) and the upper and lower surfaces of the basket 30 is washed away with the cleaning liquid. In this embodiment, the in-chamber cleaning process is performed in parallel with a series of resist removal processes. Of the in-chamber cleaning process, the cleaning liquid discharge process is executed in parallel with the rinse process in step S4.

  Along with the start of the rinsing process in step S4, the control device 50 opens the cleaning liquid valve 35 and discharges the cleaning liquid from the first cleaning liquid discharge nozzle 32 and the second cleaning liquid discharge nozzle 33 (step S5). The cleaning liquid from the first cleaning liquid discharge nozzle 32 flows on the upper surface of the ridge 30 in the direction in which the ridge 30 extends. For this reason, a flow of the cleaning liquid is formed along the ridge 30. As a result, the SPM accumulated on the upper surface of the basket 30 is washed away.

In addition, the cleaning liquid from the second cleaning liquid discharge nozzle 33 flows along the upper side of the shutter 18 in the upper part of the shutter 18 and in the vicinity of the lower surface of the bag 30. For this reason, a flow of the drying gas is formed along the upper side of the shutter 18. As a result, the SPM adhering to the upper portion of the shutter 18 and the lower surface of the basket 30 is washed away.
After performing the rinsing process in step S4 for a predetermined time, the control device 50 closes the DIW valve 16 and stops the supply of DIW to the surface of the wafer W. Thereafter, the control device 50 controls the motor 6 to increase the rotation speed of the wafer W to a predetermined high rotation speed (for example, 2500 to 5000 rpm). As a result, spin drying is performed in which the DIW adhering to the wafer W is shaken off and dried (step S6). By this spin drying, the DIW adhering to the wafer W is almost completely removed. After executing this spin dry for a predetermined time, the control device 50 controls the motor 6 to stop the rotation of the spin chuck 3. Of the in-chamber cleaning process, the N ₂ gas discharge process is executed in parallel with the spin drying in step S6.

Along with the start of the spin drying step S6, the controller 50 opens the N ₂ gas valve 37 to the N ₂ gas discharge nozzle 34 discharging the N ₂ gas (step S7). N ₂ gas from the N ₂ gas discharge nozzle 34, near the upper and lower surfaces of the upper and eaves 30 of the shutter 18, flows along the upper side of the shutter 18. For this reason, a flow of the drying gas is formed along the upper side of the shutter 18. As a result, the cleaning liquid used to wash away the SPM is removed from the upper portion of the shutter 18 and the upper and lower surfaces of the ridge 30.

After the processing of both the spin dry in step S6 and the N ₂ gas discharge operation in step S7 is completed, the control device 50 drives the horizontal movement cylinder 41 and the lifting cylinder 43 to open the closed shutter 18. An open state is set (step S8). Then, the processed wafer W is unloaded by the transfer robot TR (step S9). Simultaneously with the loading of the wafer W, the next wafer W is loaded by the transfer robot TR. In order to perform cleaning and drying in the closed state of the shutter 18, when the wafer W passes through the opening 17 by opening the shutter 18, SPM or cleaning liquid droplets are formed near the upper portion of the shutter 18 or in the bag 30. It is not attached. Therefore, there is almost no possibility that the droplets fall on the wafer W carried out of the processing chamber 2.

  If the N2 gas discharge time is set to be relatively short, a small amount of cleaning liquid may remain near the top of the shutter 18 after the N2 gas discharge is completed. In this case, a small amount of cleaning liquid is dropped when the shutter 18 is opened. For this reason, the cleaning liquid is satisfactorily received by the upper side ridge 25. For this reason, it is possible to prevent the cleaning liquid from dropping onto the wafer W, and to reliably prevent contamination of the wafer W with the cleaning liquid.

As described above, according to this embodiment, the SPM adhering to the upper part of the shutter 18 and the upper and lower surfaces of the ridge 30 is washed away by the cleaning liquid. Then, the cleaning liquid used for cleaning is removed by N ₂ gas. Therefore, the SPM and the cleaning liquid can be removed from the upper portion of the shutter 18 and the upper and lower surfaces of the ridge 30. Thereby, it is possible to prevent the SPM and the cleaning liquid from dropping onto the wafer W when the wafer W is carried in and out of the processing chamber 2. Therefore, contamination of the wafer W can be prevented.

In addition, the cleaning liquid is discharged from the first cleaning liquid discharge nozzle 32 and the second cleaning liquid discharge nozzle 33 arranged at the side position of the ridge 30 in a direction along the extending direction of the upright portion 21 and the upper protruding portion 29. For this reason, a flow of the cleaning liquid is formed along the upper side of the shutter 18. Thereby, SPM can be removed efficiently.
Further, the N ₂ gas discharge nozzle 34 disposed in the lateral position of the eaves 30, N ₂ gas is ejected in a direction along the extending direction of the raised portion 21 and the upper protruding portion 29. For this reason, a flow of N ₂ gas is formed along the upper side of the shutter 18. Thereby, the cleaning liquid can be efficiently removed.

Furthermore, in the above-described embodiment, the in-chamber cleaning process is performed in parallel with the resist removal process. In this case, compared to the case where the chamber cleaning process is performed after the resist removal process is performed, the time for performing the resist removal process and the chamber cleaning process can be shortened, and the throughput of the apparatus is improved. Can be made.
While one embodiment of the present invention has been described above, the present invention can be implemented in other forms.

In the above description, one cleaning liquid nozzle 32 of the pair of cleaning liquid discharge nozzles 32, 33 is arranged with its discharge port facing the top surface of the ridge 30, and the other cleaning liquid discharge nozzle 33 is disposed with its discharge port as the basin 30. Although the configuration disposed toward the lower surface has been described, both the pair of cleaning liquid discharge nozzles 32 and 33 may be configured such that the discharge ports thereof are disposed toward the lower surface of the ridge 30.
Further, the number of cleaning liquid discharge nozzles may be one, or three or more. Further, a plurality of N ₂ gas discharge nozzles may be provided.

Furthermore, although the case where the discharge directions of the cleaning liquid discharge nozzle and the N ₂ gas discharge nozzle are the same has been described as an example, these discharge directions may be different from each other.
Further, the bag 30 and the bag 24 can be omitted. In this case, the discharge liquid and from the cleaning liquid discharge nozzle, N ₂ gas from the N ₂ gas discharge nozzle is preferably discharged to the upper portion of the side wall of the upper and the opening 17 of the shutter 18 in a closed state.

Further, in the above-described embodiment, the configuration in which the chamber cleaning process is performed for each resist removal process is shown. The configuration may be such that the chamber cleaning process is executed once for each of a plurality of processes.
In the above description, the chamber cleaning process is described as being performed in parallel with the series of resist removal processes. However, the chamber cleaning process is performed after the series of resist removal processes. May be.

  Furthermore, in the above description, the case where the resist removal process using the resist stripping solution is performed in the processing chamber 2 has been described as an example, but the process other than the resist removal process such as the cleaning process is performed in the processing chamber 2. It is also applicable when In this case, a chemical liquid such as hydrochloric acid / hydrogen peroxide mixture, hydrofluoric acid, hydrochloric acid, phosphoric acid, acetic acid, ammonia, hydrogen peroxide, citric acid, oxalic acid, TMAH, or the like can be used as the treatment liquid.

  In addition, various design changes can be made within the scope of matters described in the claims.

It is sectional drawing which shows typically the structure of the substrate processing apparatus which concerns on one Embodiment of this invention. FIG. 4 is a front view of the opening 17 as viewed from the inside of the processing chamber 2. It is sectional drawing seen from the cut surface line AA of FIG. The closed state of the shutter is shown. It is sectional drawing seen from the cut surface line AA of FIG. The open state of the shutter is shown. It is a block diagram which shows the electric constitution of a substrate processing apparatus. It is a flowchart for demonstrating the flow of the resist removal process in a substrate processing apparatus.

Explanation of symbols

1 sidewall 2 processing chamber 17 opening 18 a shutter 20 projecting portion 24 gutter 25 upper gutter 29 upper projection 30 eaves 32 first cleaning liquid discharge nozzle 33 second cleaning liquid discharge nozzle 34 N ₂ gas discharge nozzle 35 cleaning liquid valve 37 N ₂ gas valve W Wafer (substrate)

Claims (7)

A processing chamber surrounded by the sidewalls for processing the substrate with the processing liquid;
An opening formed in the sidewall and through which the substrate passes when the substrate is unloaded or loaded into the processing chamber;
A shutter that opens and closes the opening;
A cleaning liquid discharge nozzle that discharges the cleaning liquid toward the vicinity of the upper portion of the shutter in the closed state;
A drying gas discharge nozzle for discharging a drying gas toward the vicinity of the upper portion of the shutter in the closed state ;
The substrate processing apparatus, wherein the cleaning liquid discharge nozzle discharges the cleaning liquid from a side near an upper portion of the shutter in a closed state in a direction substantially along an upper side of the shutter .   The substrate processing apparatus according to claim 1, wherein a trough for receiving the falling liquid is provided at an upper portion of the opening.   3. The substrate according to claim 1, wherein the side wall above the opening is provided with a ridge for receiving liquid flowing down toward the opening along the inner surface of the side wall. 4. Processing equipment.   The scissors have an upper surface and a lower surface extending along the upper side of the opening,
  The cleaning liquid discharge nozzle is disposed on one side of the upper portion of the shutter in the closed state, and includes a first cleaning liquid discharge nozzle for discharging the cleaning liquid toward the upper surface of the ridge, and the upper portion of the shutter in the closed state. The substrate processing apparatus according to claim 3, further comprising a second cleaning liquid discharge nozzle that is disposed on one side and discharges the cleaning liquid toward an upper portion of the shutter and a lower surface of the ridge.   The dry gas discharge nozzle discharges a dry gas in a direction substantially along an upper side of the shutter from a side near the upper portion of the shutter in the closed state. The substrate processing apparatus according to item.   The substrate processing apparatus according to claim 1, further comprising a resist stripping solution supply unit for supplying a resist stripping solution to the surface of the substrate in the processing chamber. . A substrate processing apparatus, comprising: a processing chamber surrounded by a side wall; and a shutter that opens and closes an opening formed in the side wall, wherein the processing chamber processes the substrate accommodated in the processing chamber. A method for cleaning the inside,
A cleaning liquid discharge step for discharging the cleaning liquid in a direction substantially along the upper side of the shutter from the side near the upper portion of the closed shutter in the processing chamber;
And a drying gas discharging step of discharging a drying gas toward the vicinity of the upper portion of the shutter in the closed state after the cleaning liquid discharging step.

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