TWI664661B - Water channel device of pre- cleaning machine, pre-cleaning machine and pre-cleaning method - Google Patents

Water channel device of pre- cleaning machine, pre-cleaning machine and pre-cleaning method Download PDF

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Publication number
TWI664661B
TWI664661B TW107101769A TW107101769A TWI664661B TW I664661 B TWI664661 B TW I664661B TW 107101769 A TW107101769 A TW 107101769A TW 107101769 A TW107101769 A TW 107101769A TW I664661 B TWI664661 B TW I664661B
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Taiwan
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water
wafer
water channel
cleaning
tank
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TW107101769A
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Chinese (zh)
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TW201916097A (en
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劉源
汪燕
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大陸商上海新昇半導體科技有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67023Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning

Abstract

本發明提供一種用於預清洗機的水道裝置、預清洗機以及預清洗方法,該水道裝置包括:水槽以及設置在水槽側壁上的進水口和出水口,並且所述進水口和出水口設置在所述水槽的與所述水槽延伸方向平行的側壁上或者設置在所述水槽的與所述水槽延伸方向垂直的側壁上。該用於預清洗機的水道裝置可以降低甚至避免拋光液對晶圓的腐蝕。該預清洗機及預清洗方法具有類似的優點。The invention provides a water channel device, a pre-cleaner and a pre-cleaning method for a pre-cleaning machine. The water channel device includes a water tank, and a water inlet and a water outlet provided on a side wall of the water tank. The side wall of the water tank parallel to the extending direction of the water tank or is provided on the side wall of the water tank perpendicular to the extending direction of the water tank. The water channel device for the pre-cleaning machine can reduce or even avoid the corrosion of the wafer by the polishing liquid. The pre-cleaner and the pre-cleaning method have similar advantages.

Description

用於預清洗機的水道裝置、預清洗機以及預清洗方法Water channel device for pre-cleaning machine, pre-cleaning machine and pre-cleaning method

本發明涉及半導體技術領域,具體而言涉及一種水道裝置、預清洗機以及預清洗方法。 The present invention relates to the field of semiconductor technology, and in particular, to a water channel device, a pre-cleaner, and a pre-cleaning method.

12吋矽片對顆粒的要求已經達到了極致的地步。矽片的顆粒性能(particle performance)分為微點缺陷LPD(light point defect)和不可移之微點缺陷LPDN(light point defect-nonremovable)兩種。LPD一般指凸起的可以被清洗去除的顆粒,而LPDN指凹的,不可以被移除的缺陷。隨著IC(積體電路)技術節點已接近10nm以下,即使是1顆20nm左右的顆粒,不論是LPD或者LPDN,都將會是元件殺手,對後段IC制程造成良率損失。因此,毛晶圓(bare wafer)本身的顆粒性能就變得尤為重要。 The 12-inch silicon chip has reached the extreme requirements for particles. The particle performance of silicon wafers is divided into two types: light point defect (LPD) and light point defect-nonremovable (LPDN). LPD generally refers to raised particles that can be removed by cleaning, while LPDN refers to concave defects that cannot be removed. As the IC (Integrated Circuit) technology node has approached below 10nm, even a particle of about 20nm, whether it is LPD or LPDN, will be a component killer, causing a yield loss to the later IC process. Therefore, the particle performance of the bare wafer itself becomes particularly important.

對顆粒造成最重要影響的是最終拋光(final polish,FP)和拋光後的預清洗(pre clean)兩道製程,最終拋光通過對晶圓(即矽片)正面進行拋光能有效去除顆粒。而拋光中引入的顆粒,如拋光液(slurry)殘留,矽碎屑等則能夠通過預清洗有效去除。然而在實際中,存在一個最終拋光與預清洗之間的等待時間(Q-time)的問題。由於最終拋光使用的拋光液呈鹼性,當拋光液殘留在晶圓上時,如果在一定時間內沒有及時去除,拋光液會腐蝕晶圓表面,造成LPDN增多。目前的清洗機為增加產量(throughtput),往往設計有水 道(water channel)。水道置於清洗機中清洗藥液槽(wet batch)之前,用於盛放暫時未能投入清洗藥液槽的一盒晶圓(lot,25片晶圓)。由於清洗槽清洗時間的限制,一般每15分鐘才允許投入一組晶圓(即一個batch,50片晶圓,兩個lot),而一般水道中可盛放10盒晶圓(10lot),這就意味著最後一組晶圓(即最後一個batch)需要經過至少4x15=60min的等待時間,才能開始清洗,這樣就增加了等待時間,造成潛在的拋光液對晶圓的腐蝕。 The most important impact on particles is the two processes of final polish (FP) and pre-clean after polishing. Final polishing can effectively remove particles by polishing the front side of the wafer (ie, silicon wafer). The particles introduced during polishing, such as slurry residue, and silicon debris, can be effectively removed by pre-cleaning. However, in practice, there is a problem of the waiting time (Q-time) between final polishing and pre-cleaning. Because the polishing liquid used for final polishing is alkaline, if the polishing liquid remains on the wafer, if it is not removed in time, the polishing liquid will corrode the surface of the wafer, causing an increase in LPDN. Current washers are designed to increase throughput (throughtput) and are often designed with water Channel (water channel). The water channel is placed in a washing machine before cleaning the chemical liquid tank (wet batch), and is used to hold a box of wafers (lots, 25 wafers) that have not been put into the cleaning chemical liquid tank for the time being. Due to the limitation of the cleaning time of the cleaning tank, generally a group of wafers (that is, one batch, 50 wafers, and two slots) is allowed to be put in every 15 minutes, and the general water channel can hold 10 boxes of wafers. It means that the last set of wafers (that is, the last batch) needs to wait at least 4x15 = 60min before cleaning can be started. This increases the waiting time and causes potential corrosion of the wafer to the wafer.

因此有必要提出一種用於預清洗機的水道裝置、預清洗機以及預清洗方法,以至少部分解決上述問題。 Therefore, it is necessary to propose a water channel device, a pre-cleaner, and a pre-cleaning method for a pre-cleaner to at least partially solve the above problems.

在發明內容部分中引入了一系列簡化形式的概念,這將在具體實施方式部分中進一步詳細說明。本發明的發明內容部分並不意味著要試圖限定出所要求保護的技術方案的關鍵特徵和必要技術特徵,更不意味著試圖確定所要求保護的技術方案的保護範圍。 A series of simplified forms of concepts are introduced in the summary section, which will be explained in further detail in the detailed description section. The summary of the present invention does not mean trying to define the key features and necessary technical features of the claimed technical solution, let alone trying to determine the protection scope of the claimed technical solution.

針對現有技術的不足,本發明提出一種用於預清洗機的水道裝置、預清洗機以及預清洗方法,可以降低甚至避免拋光液對晶圓的腐蝕。 In view of the shortcomings of the prior art, the present invention proposes a water channel device, a pre-cleaner, and a pre-cleaning method for a pre-cleaner, which can reduce or even avoid the corrosion of the wafer by the polishing liquid.

為了克服目前存在的問題,本發明的一方面提供一種用於預清洗機的水道裝置,包括:水槽以及設置在水槽側壁上的進水口和出水口,並且所述進水口和出水口設置在所述水槽的與所述水槽延伸方向平行的側壁上或者設置在所述水槽的與所述水槽延伸方向垂直的側壁上。 In order to overcome the existing problems, an aspect of the present invention provides a water channel device for a pre-cleaning machine, which includes a water tank and a water inlet and a water outlet provided on a side wall of the water tank, and the water inlet and the water outlet are provided at The side wall of the water tank parallel to the extending direction of the water tank or provided on the side wall of the water tank perpendicular to the extending direction of the water tank.

可選地,所述進水口和出水口分別設置在所述水槽相對的兩個側壁上。 Optionally, the water inlet and the water outlet are respectively disposed on two opposite side walls of the water tank.

可選地,所述進水口和出水口均勻設置在所述水槽的側壁上。 Optionally, the water inlet and the water outlet are evenly disposed on a side wall of the water tank.

本發明的另一方面提供一種用於預清洗機的水道裝置,包括:第一水道,所述第一水道包括第一水槽和設置在所述第一水槽中的側壁上的第一進水口和第一出水口,並且所述第一進水口和第一出水口分別設置在所述水槽的與所述水槽延伸方向平行的兩個側壁上;第二水道,所述第二水道包括第二水槽和設置在所述第二水槽中的側壁上的第二進水口和第二出水口,並且所述第二進水口和第二出水口分別設置在所述水槽的與所述水槽延伸方向垂直的兩個側壁上。 Another aspect of the present invention provides a water channel device for a pre-washing machine, including: a first water channel, the first water channel including a first water tank and a first water inlet provided on a side wall in the first water tank; A first water outlet, and the first water inlet and the first water outlet are respectively disposed on two side walls of the water tank parallel to the extending direction of the water tank; a second water channel, and the second water channel includes a second water tank And a second water inlet and a second water outlet provided on a side wall of the second water tank, and the second water inlet and the second water outlet are respectively provided in the water tank perpendicular to the direction in which the water tank extends On both side walls.

可選地,所述第一水槽能夠容納兩個晶盒,所述第二水槽能夠容納8個晶盒。 Optionally, the first water tank can accommodate two crystal boxes, and the second water tank can accommodate eight crystal boxes.

根據本發明的用於預清洗機的水道裝置,通過在水槽的與所述水槽延伸方向平行或垂直的側壁上設置進水口和出水口,使得清洗時可以通過將晶圓表面放置為平行於進水口和出水口的連線方向,以便水流可以沖刷晶圓表面,從而更好地去除殘留的拋光液,降低甚至避免拋光液對晶圓的腐蝕。 According to the water channel device for a pre-cleaner of the present invention, a water inlet and a water outlet are provided on a side wall of the water tank parallel or perpendicular to the extending direction of the water tank, so that the surface of the wafer can be placed parallel to the water inlet during cleaning. The direction of the connection between the water outlet and the water outlet, so that the water flow can flush the surface of the wafer, so as to better remove the remaining polishing liquid, reduce or even avoid the corrosion of the wafer by the polishing liquid.

本發明的又一方面提供一種預清洗機,包括上述的水道裝置以及與所述水道裝置相鄰佈置的清洗液槽。 According to another aspect of the present invention, a pre-cleaning machine is provided, which includes the water channel device described above and a cleaning liquid tank arranged adjacent to the water channel device.

本發明的又一方面提供一種預清洗機,包括上述的水道裝置以及與所述第二水道裝置相鄰佈置的清洗液槽。 According to another aspect of the present invention, a pre-cleaner is provided, including the water channel device described above and a cleaning liquid tank arranged adjacent to the second water channel device.

根據本發明的預清洗機,通過在水道裝置的與所述水道裝置延伸方向平行或垂直的側壁上設置進水口和出水口,使得清洗時可以通過將晶圓表面放置為平行於進水口和出水口的連線方向,以便水流可以沖刷晶圓表面,從而更好地去除殘留的拋光液,降低甚至避免拋光液對晶圓的腐蝕。 According to the pre-cleaner of the present invention, a water inlet and a water outlet are provided on a side wall of the water channel device that is parallel or perpendicular to the extending direction of the water channel device, so that the wafer surface can be placed parallel to the water inlet and the water outlet during cleaning. The direction of the connection of the water port, so that the water flow can wash the wafer surface, so as to better remove the remaining polishing liquid, reduce or even avoid the corrosion of the wafer by the polishing liquid.

本發明的再一方面提供一種預清洗方法,包括:將裝載有待清洗晶圓的晶盒依次放置在所述水道裝置中,並且當所述進水口和出水口設置在所述水槽的與所述水槽延伸方向平行的側壁上時,所述晶盒以使所述晶圓的表面垂直於晶盒在所述水槽中的移動方向的方式放置;當所述進水口和出水口設置在所述水槽的與所述水槽延伸方向垂直的側壁上時,所述晶盒以使所述晶圓的表面平行於晶盒在所述水槽中的移動方向的方式放置;在所述水道裝置中水洗所述晶圓;按設定時間間隔依次將所述水道裝置中的所述晶盒放入清洗液槽中;在所述清洗液槽中清洗所述晶圓。 Another aspect of the present invention provides a pre-cleaning method, which includes: sequentially placing a crystal case loaded with a wafer to be cleaned in the water channel device, and when the water inlet and the water outlet are provided in the water tank and the water tank. When the water tank extends on a side wall parallel to the extending direction, the crystal box is placed such that the surface of the wafer is perpendicular to the moving direction of the crystal box in the water tank; when the water inlet and the water outlet are provided in the water tank On the side wall perpendicular to the extending direction of the water tank, the crystal box is placed such that the surface of the wafer is parallel to the moving direction of the crystal box in the water tank; the water channel device is washed with water A wafer; sequentially placing the crystal box in the water channel device into a cleaning liquid tank at a set time interval; and cleaning the wafer in the cleaning liquid tank.

本發明的再一方面提供一種預清洗方法,包括:將裝載有待清洗晶圓的晶盒放置在所述第一水道中,並且使所述晶圓的表面垂直於所述晶盒在所述第一水槽中的移動方向;在所述第一水道中清洗所述晶圓;將所述第一水道中的所述晶盒放置到所述第二水道中,並且使所述晶圓的表面平行於所述晶盒在所述第二水槽中的移動方向;在所述第二水道中水洗所述晶圓;按設定時間間隔依次將所述第二水道中的所述晶圓放入清洗液槽中;在所述清洗液槽中清洗所述晶圓。 Yet another aspect of the present invention provides a pre-cleaning method, comprising: placing a crystal box loaded with a wafer to be cleaned in the first water channel, and making a surface of the wafer perpendicular to the crystal box at the first Moving direction in a water tank; cleaning the wafer in the first water channel; placing the crystal box in the first water channel into the second water channel, and making the surface of the wafer parallel In the moving direction of the crystal box in the second water tank; washing the wafer in the second water channel; and sequentially putting the wafer in the second water channel into a cleaning solution at a set time interval In the tank; cleaning the wafer in the cleaning liquid tank.

可選地,所述第一水道能夠容納2個晶盒,所述第二水道能夠容納8個晶盒。 Optionally, the first water channel can accommodate 2 crystal boxes, and the second water channel can accommodate 8 crystal boxes.

根據本發明的預清洗方法,由於採用上述水道裝置,因此在預清洗時可以更好地去除殘留的拋光液,從而降低甚至避免拋光液對晶圓的腐蝕。 According to the pre-cleaning method of the present invention, since the above-mentioned water channel device is adopted, the remaining polishing liquid can be better removed during pre-cleaning, thereby reducing or even avoiding the corrosion of the wafer by the polishing liquid.

100‧‧‧預清洗機 100‧‧‧Pre-washer

101‧‧‧水道 101‧‧‧ Watercourse

102‧‧‧清洗液槽 102‧‧‧Cleaning liquid tank

11‧‧‧晶盒 11‧‧‧ Crystal Box

1010‧‧‧溢流入口 1010‧‧‧ Overflow inlet

200‧‧‧預清洗機 200‧‧‧Pre-washer

202‧‧‧水道裝置 202‧‧‧Water channel installation

202‧‧‧清洗液槽 202‧‧‧Cleaning liquid tank

2010‧‧‧水槽 2010‧‧‧Sink

2011‧‧‧進水口 2011‧‧‧Inlet

2012‧‧‧出水口 2012‧‧‧outlet

300‧‧‧預清洗機 300‧‧‧Pre-washer

301‧‧‧水道裝置 301‧‧‧watercourse device

302‧‧‧清洗液槽 302‧‧‧Cleaning liquid tank

3010‧‧‧水槽 3010‧‧‧Sink

3011‧‧‧進水口 3011‧‧‧Inlet

3012‧‧‧出水口 3012‧‧‧ Outlet

400‧‧‧預清洗機 400‧‧‧Pre-washer

401‧‧‧第一水道裝置 401‧‧‧First watercourse installation

402‧‧‧第二水道裝置 402‧‧‧Second channel installation

403‧‧‧清洗液槽 403‧‧‧Cleaning liquid tank

4010‧‧‧第一水槽 4010‧‧‧First Sink

4011‧‧‧第一進水口 4011‧‧‧First water inlet

4012‧‧‧第一出水口 4012‧‧‧First Outlet

4020‧‧‧第二水槽 4020‧‧‧Second Sink

4021‧‧‧第二進水口 4021‧‧‧Second water inlet

4022‧‧‧第二出水口 4022‧‧‧Second Outlet

本發明的下列附圖在此作為本發明的一部分用於理解本發明。附圖中示出了本發明的實施例及其描述,用來解釋本發明的原理。 The following drawings of the present invention are used herein as a part of the present invention to understand the present invention. The drawings illustrate embodiments of the invention and their descriptions to explain the principles of the invention.

圖1A示出一種預清洗機的示意性俯視圖;圖1B示出圖1A所示預清洗機的示意性正視圖;圖1C示出圖1A中晶盒的示意性左視圖;圖1D示出圖1A中晶盒的示意性正視圖;圖2A示出根據本發明一實施方式的預清洗機的示意性俯視圖;圖2B示出使用圖2A所示預清洗機清洗時水流流過晶盒的示意圖;圖2C示出圖2A所示預清洗機的水道的示意性正視圖;圖2D示出使用圖2A所示預清洗機清洗時根據晶盒投入量控制進/出水口的打開和關閉;圖3A示出根據本發明另一實施方式的預清洗機的示意性俯視圖;圖3B示出使用圖3A所示預清洗機清洗時水流流過晶盒的示意圖;圖3C示出圖3A所示預清洗機的水道的示意性側視圖;圖3D示出使用圖3A所示預清洗機清洗時晶盒移動過程示意圖;圖4A示出根據本發明另一實施方式的預清洗機的示意性俯視圖;圖4B示出使用圖4A所示預清洗機清洗時水流流過晶盒的示意圖; 圖4C示出使用圖4A所示預清洗機清洗時晶盒移動過程示意圖。 FIG. 1A shows a schematic top view of a pre-cleaner; FIG. 1B shows a schematic front view of the pre-cleaner shown in FIG. 1A; FIG. 1C shows a schematic left view of the crystal box in FIG. 1A; 1A is a schematic front view of a crystal box; FIG. 2A is a schematic top view of a pre-cleaner according to an embodiment of the present invention; FIG. 2B is a schematic diagram of water flowing through the crystal box when the pre-cleaner shown in FIG. 2A is used for cleaning; 2C shows a schematic front view of the water channel of the pre-cleaner shown in FIG. 2A; FIG. 2D shows the opening and closing of the water inlet / outlet port according to the input amount of the crystal box when cleaning using the pre-cleaner shown in FIG. 2A; 3A shows a schematic top view of a pre-cleaner according to another embodiment of the present invention; FIG. 3B shows a schematic view of water flowing through a crystal box when cleaning is performed using the pre-cleaner shown in FIG. 3A; FIG. 3C shows a pre-cleaner shown in FIG. 3A A schematic side view of the water channel of the washing machine; FIG. 3D shows a schematic diagram of the movement of the crystal box during cleaning using the prewashing machine shown in FIG. 3A; FIG. 4A shows a schematic top view of the prewashing machine according to another embodiment of the present invention; FIG. 4B shows the flow of water during cleaning using the pre-washer shown in FIG. 4A Schematic diagram of the crystal box; FIG. 4C is a schematic diagram illustrating a process of moving the crystal box when the pre-cleaner shown in FIG. 4A is used for cleaning.

在下文的描述中,給出了大量具體的細節以便提供對本發明更為徹底的理解。然而,對於本領域技術人員而言顯而易見的是,本發明可以無需一個或多個這些細節而得以實施。在其他的例子中,為了避免與本發明發生混淆,對於本領域公知的一些技術特徵未進行描述。 In the following description, numerous specific details are given to provide a more thorough understanding of the present invention. However, it will be apparent to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described.

應當理解的是,本發明能夠以不同形式實施,而不應當解釋為局限於這裡提出的實施例。相反地,提供這些實施例將使公開徹底和完全,並且將本發明的範圍完全地傳遞給本領域技術人員。在附圖中,為了清楚,層和區的尺寸以及相對尺寸可能被誇大自始至終相同附圖標記表示相同的元件。 It should be understood that the present invention can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals indicate the same elements throughout.

應當明白,當元件或層被稱為“在…上”、“與…相鄰”、“連接到”或“耦合到”其它元件或層時,其可以直接地在其它元件或層上、與之相鄰、連接或耦合到其它元件或層,或者可以存在居間的元件或層。相反,當元件被稱為“直接在…上”、“與…直接相鄰”、“直接連接到”或“直接耦合到”其它元件或層時,則不存在居間的元件或層。應當明白,儘管可使用術語第一、第二、第三等描述各種元件、部件、區、層和/或部分,這些元件、部件、區、層和/或部分不應當被這些術語限制。這些術語僅僅用來區分一個元件、部件、區、層或部分與另一個元件、部件、區、層或部分。因此,在不脫離本發明教導之下,下面討論的第一元件、部件、區、層或部分可表示為第二元件、部件、區、層或部分。 It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer, and Are adjacent, connected or coupled to other elements or layers, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below can be represented as a second element, component, region, layer or section without departing from the teachings of the present invention.

空間關係術語例如“在…下”、“在…下面”、“下面的”、“在…之下”、“在…之上”、“上面的”等,在這裡可為了方便描述而被使 用從而描述圖中所示的一個元件或特徵與其它元件或特徵的關係。應當明白,除了圖中所示的取向以外,空間關係術語意圖還包括使用和操作中的元件的不同取向。例如,如果附圖中的元件翻轉,然後,描述為“在其它元件下面”或“在其之下”或“在其下”元件或特徵將取向為在其它元件或特徵“上”。因此,示例性術語“在…下面”和“在…下”可包括上和下兩個取向。元件可以另外地取向(旋轉90度或其它取向)並且在此使用的空間描述語相應地被解釋。 Spatial relation terms such as "below", "below", "below", "below", "above", "above", etc. may be used herein for convenience of description It is used to describe the relationship between one element or feature and other elements or features shown in the figure. It should be understood that in addition to the orientation shown in the figures, the spatial relationship terminology is intended to include different orientations of the elements in use and operation. For example, if an element in the drawing is turned over, then an element or feature described as "below" or "beneath" other elements or features would then be oriented "above" the other element or feature. Thus, the exemplary terms "below" and "below" can include both an orientation of above and below. The elements may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

在此使用的術語的目的僅在於描述具體實施例並且不作為本發明的限制。在此使用時,單數形式的“一”、“一個”和“所述/該”也意圖包括複數形式,除非上下文清楚指出另外的方式。還應明白術語“組成”和/或“包括”,當在該說明書中使用時,確定所述特徵、整數、步驟、操作、元件和/或部件的存在,但不排除一個或更多其它的特徵、整數、步驟、操作、元件、部件和/或組的存在或添加。在此使用時,術語“和/或”包括相關所列專案的任何及所有組合。 The terminology used herein is for the purpose of describing particular embodiments only and is not intended as a limitation of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, determine the presence of stated features, integers, steps, operations, elements and / or components, but do not exclude one or more other The presence or addition of features, integers, steps, operations, elements, parts, and / or groups. As used herein, the term "and / or" includes any and all combinations of the associated listed items.

如前所述目前最終拋光後的預清洗過程中,由於等待時間可能造成殘留拋光液腐蝕晶圓的問題,為了克服這種問題,目前常見的做法是在預清洗機的水道中增加溢流功能,圖1A和圖1B示出一種具有溢流功能的預清洗機。如圖1A和圖1B所示,預清洗機100包括水道101和與水道101相鄰佈置的清洗液槽102,其中水道101可以容納10個晶盒,每個清洗液槽102可以容納2個晶盒,裝載有晶圓的晶盒如圖1C和圖1D所示,晶盒11為開放式結構,每個晶盒可以支撐一定數量的晶圓10。最終拋光後的晶圓10裝載在晶盒11中放入預清洗機100中進行預清洗。具體地,首先放入水道101中利用去離子水進行水洗,然後在放入清洗液槽102中利用清洗液(例如SC1、SC2)進行清洗。並且進一步 地,在水道101中,在左右兩個側壁的底部設置溢流入口1010,通過溢流入口1010不斷向水道中加入新的去離子水(DIW),來降低水道中鹼性拋光液的濃度,並爭取將殘餘在晶圓表面的拋光液帶離。然而,由於水道面積較大,如果要保證溢流的效果,往往需要大流量的去離子水,同時由於晶圓間僅有1cm的間距,溢流入口通入的去離子水僅通過擴散無法實現對晶圓表面有效的沖刷。本發明基於此,對預清洗機的水道進行了改進,以克服這些問題,從而降低甚至避免拋光液對晶圓的腐蝕。 As mentioned earlier, during the pre-cleaning process after the final polishing, the waiting time may cause the problem of wafer corrosion due to the residual polishing solution. In order to overcome this problem, the common practice at present is to increase the overflow function in the water channel of the pre-cleaning machine. FIG. 1A and FIG. 1B show a pre-cleaner with overflow function. As shown in FIGS. 1A and 1B, the pre-washing machine 100 includes a water channel 101 and a cleaning liquid tank 102 arranged adjacent to the water channel 101. The water channel 101 can accommodate 10 crystal boxes, and each cleaning liquid tank 102 can accommodate 2 crystals. As shown in FIG. 1C and FIG. 1D, the wafer box with wafers loaded thereon. The wafer box 11 is an open structure, and each wafer box can support a certain number of wafers 10. The wafer 10 after the final polishing is loaded into the wafer box 11 and put into a pre-cleaner 100 for pre-cleaning. Specifically, first, the water is washed in deionized water in the water channel 101, and then washed in the cleaning liquid tank 102 using a cleaning liquid (for example, SC1, SC2). And further Ground, in the water channel 101, overflow inlets 1010 are provided at the bottom of the left and right side walls, and new deionized water (DIW) is continuously added to the water channel through the overflow inlet 1010 to reduce the concentration of the alkaline polishing solution in the water channel. And strive to take away the polishing liquid remaining on the wafer surface. However, due to the large area of the water channel, if the effect of overflow is to be guaranteed, a large flow of deionized water is often required. At the same time, because the wafer is only 1cm apart, the deionized water passing through the overflow inlet cannot be achieved only by diffusion. Effective scouring of wafer surface. Based on this, the present invention improves the water channel of the pre-cleaner to overcome these problems, thereby reducing or even avoiding the corrosion of the wafer by the polishing liquid.

為了徹底理解本發明,將在下列的描述中提出詳細的結構及步驟,以便闡釋本發明提出的技術方案。本發明的較佳實施例詳細描述如下,然而除了這些詳細描述外,本發明還可以具有其他實施方式。 In order to thoroughly understand the present invention, detailed structures and steps will be provided in the following description in order to explain the technical solution proposed by the present invention. The preferred embodiments of the present invention are described in detail below. However, in addition to these detailed descriptions, the present invention may have other embodiments.

實施例一:圖2A示出根據本發明一實施方式的預清洗機的示意性俯視圖;圖2B示出使用圖2A所示預清洗機清洗時水流流過晶盒的示意圖;圖2C示出圖2A所示預清洗機的水道的示意性正視圖;圖2D示出使用圖2A所示預清洗機清洗時根據晶盒投入量控制進/出水口的打開和關閉。下面結合圖2A~圖2D對根據本發明一實施方式的預清洗機進行描述。 Embodiment 1: FIG. 2A is a schematic top view of a pre-cleaner according to an embodiment of the present invention; FIG. 2B is a schematic view of water flowing through a crystal box during cleaning using the pre-cleaner shown in FIG. 2A; 2A is a schematic front view of the water channel of the pre-cleaner shown in FIG. 2A; FIG. 2D shows that the opening and closing of the water inlet / outlet port are controlled according to the input amount of the crystal box when the pre-cleaner shown in FIG. 2A is used for cleaning. The pre-cleaner according to an embodiment of the present invention is described below with reference to FIGS. 2A to 2D.

如圖2A所示,根據本發明一實施方式的預清洗機200包括水道裝置201和與水道裝置201相鄰佈置的清洗液槽202。示例性地,水道裝置201可以容納10個晶盒11,清洗液槽202可以容納2個晶盒11,每個晶盒11裝載有若干晶圓10。 As shown in FIG. 2A, the pre-cleaning machine 200 according to an embodiment of the present invention includes a water channel device 201 and a cleaning liquid tank 202 disposed adjacent to the water channel device 201. Exemplarily, the water channel device 201 can accommodate 10 crystal cassettes 11, and the cleaning liquid tank 202 can accommodate 2 crystal cassettes 11, and each wafer cassette 11 is loaded with a plurality of wafers 10.

在本實施方式中,水道裝置201包括水槽2010和分別設置在水槽2010兩個相對的側壁上的進水口2011和出水口2012。水槽2010呈長方體槽狀,進水口2011和出水口2012設置在水槽2010的平行於水槽2010延伸方向的側壁 上。例如在圖2A中,水槽2010沿橫向(箭頭所示方向)延伸,進水口2011和出水口2012分別設置在水槽2010的平行於水槽2010延伸方向的兩個側壁上(即設置在前側臂和後側壁上)。進水口2011和出水口2012的設置方式如圖2C所示,在水槽2010的側壁上均勻設置多個進/出水口,示例性地,例如進/出水口佈滿水槽2010的橫向延伸的兩個側壁。這樣由於加進/出水口的密度增加,水流流動能力也增加。 In this embodiment, the water channel device 201 includes a water tank 2010 and a water inlet 2011 and a water outlet 2012 respectively disposed on two opposite side walls of the water tank 2010. The water tank 2010 is in the shape of a rectangular parallelepiped. The water inlet 2011 and the water outlet 2012 are disposed on the side wall of the water tank 2010 parallel to the extending direction of the water tank 2010. on. For example, in FIG. 2A, the water tank 2010 extends horizontally (in the direction shown by the arrow), and the water inlet 2011 and the water outlet 2012 are respectively disposed on two side walls of the water tank 2010 parallel to the extending direction of the water tank 2010 (that is, provided on the front side arm and the rear On the side wall). The manner of setting the water inlet 2011 and the water outlet 2012 is shown in FIG. 2C. A plurality of water inlet / outlet openings are evenly arranged on the side wall of the water tank 2010. For example, for example, the water inlet / outlet covers two laterally extending water tank 2010 Sidewall. In this way, as the density of the inlet / outlet is increased, the flow capacity is also increased.

需要說明的是,水槽2010的延伸方向指的是水槽2010的長度方向或者晶盒11在水槽2010中的移動方向。 It should be noted that the extending direction of the water tank 2010 refers to the length direction of the water tank 2010 or the moving direction of the crystal box 11 in the water tank 2010.

當使用圖2A所示的預清洗機清洗晶圓時,晶盒11以使晶圓表面垂直於晶盒移動方向/水槽延伸方向的方式投入水道裝置201中,這樣由進水口2011通入並由出水口2012流出的去離子水可以如圖2B所示沖刷每個晶圓10的表面,並將晶圓10上殘留的拋光液帶離,從而降低甚至避免拋光液對晶圓的腐蝕。清洗過程中,晶盒11在水道裝置201中沿圖2A中箭頭所示方向從左至右移動,並最終進入清洗液槽202中清洗。更具體地,每隔設定時間將水道中的前兩個晶盒移入清洗液槽202中。 When the wafer is cleaned by using the pre-cleaner shown in FIG. 2A, the crystal box 11 is put into the water channel device 201 so that the surface of the wafer is perpendicular to the crystal box moving direction / sink tank extending direction. The deionized water flowing out of the water outlet 2012 can flush the surface of each wafer 10 as shown in FIG. 2B, and take away the polishing liquid remaining on the wafer 10, thereby reducing or even avoiding the corrosion of the wafer by the polishing liquid. During the cleaning process, the crystal box 11 moves from left to right in the water channel device 201 in the direction shown by the arrow in FIG. 2A, and finally enters the cleaning liquid tank 202 for cleaning. More specifically, the first two crystal boxes in the water channel are moved into the cleaning liquid tank 202 every set time.

進一步地,為了避免浪費去離子水,在使用圖2A所示的預清洗機清洗晶圓時,可以根據投入的晶盒11的數量控制進/出水口的開啟/關閉數量。示例性地,如圖2D所示,當水道裝置201中投入8個晶盒時,可以關閉與未投入晶盒的區域對應的進/出水口,以節省去離子水。 Further, in order to avoid wasting deionized water, when the wafer is cleaned by using the pre-cleaner shown in FIG. 2A, the number of opening / closing of the water inlet / outlet can be controlled according to the number of the inputted crystal cassettes 11. For example, as shown in FIG. 2D, when 8 crystal boxes are put into the water channel device 201, the water inlet / outlet port corresponding to the area where the crystal boxes are not put can be closed to save deionized water.

在本實施方式中,同時提供一種預清洗方法,其使用圖2A所示的預清洗機,該預清洗方法包括:步驟S201:將裝載有待清洗晶圓的晶盒依次 放置在所述水道裝置中,並且所述晶盒以使所述晶圓的表面垂直於晶盒在所述水槽中的移動方向的方式放置。 In this embodiment, a pre-cleaning method is also provided. The pre-cleaning method shown in FIG. 2A is used. The pre-cleaning method includes: Step S201: sequentially placing a wafer cassette loaded with wafers to be cleaned. It is placed in the water channel device, and the crystal box is placed so that the surface of the wafer is perpendicular to the moving direction of the crystal box in the water tank.

具體地,通過機械手,將裝載有待清洗晶圓(例如最終拋光後預清洗之前的晶圓)的晶盒投入到水道中,例如按先後順序自右至左投入到水道中。 Specifically, the crystal box loaded with the wafer to be cleaned (for example, the wafer before the pre-cleaning after final polishing) is put into the water channel by a robot, for example, it is put into the water channel from right to left in order.

步驟S202:在所述水道裝置中水洗所述晶圓。即利用由進水口通入並由出水口流出的去離子水沖刷每個晶圓的表面。 Step S202: Water washing the wafer in the water channel device. That is, the surface of each wafer is flushed with deionized water that flows in through the water inlet and flows out from the water outlet.

步驟S203:按設定時間間隔依次將所述水道裝置中的所述晶盒放入清洗液槽中。在水道裝置中清洗預定時間後,通過機械手將水道中前兩個晶盒移入清洗液槽中,並將水道裝置中後面的晶盒依次向前移動。 Step S203: Put the crystal box in the water channel device into a cleaning liquid tank in sequence at a set time interval. After cleaning for a predetermined time in the water channel device, the first two crystal boxes in the water channel are moved into the cleaning liquid tank by a robotic arm, and the rear crystal boxes in the water channel device are sequentially moved forward.

步驟S204:在所述清洗液槽中清洗所述晶圓。在清洗液槽中例如諸如SC1的清洗液清洗晶圓,以去除晶圓諸如殘留的拋光液、矽碎屑等顆粒,提高晶圓的顆粒性能。 Step S204: cleaning the wafer in the cleaning liquid tank. The wafer is cleaned in a cleaning liquid tank, such as SC1, to remove particles such as residual polishing liquid and silicon debris from the wafer, thereby improving the particle performance of the wafer.

實施例二:圖3A示出根據本發明另一實施方式的預清洗機的示意性俯視圖;圖3B示出使用圖3A所示預清洗機清洗時水流流過晶盒的示意圖;圖3C示出圖3A所示預清洗機的水道的示意性側視圖;圖3D示出使用圖3A所示預清洗機清洗時晶盒移動過程示意圖。下面結合圖3A~圖3D對根據本發明一實施方式的預清洗機進行描述。 Embodiment 2: FIG. 3A is a schematic top view of a pre-cleaner according to another embodiment of the present invention; FIG. 3B is a schematic diagram of water flowing through a crystal box when cleaning is performed using the pre-cleaner shown in FIG. 3A; FIG. 3C shows FIG. 3A is a schematic side view of a water channel of the pre-cleaner; FIG. 3D is a schematic diagram of a crystal box moving process when the pre-cleaner shown in FIG. 3A is used for cleaning. The pre-cleaner according to an embodiment of the present invention is described below with reference to FIGS. 3A to 3D.

如圖3A所示,根據本發明一實施方式的預清洗機300包括水道裝置301和與水道裝置301相鄰佈置的清洗液槽302。示例性地,水道301可以容納10個晶盒11,清洗液槽302可以容納2個晶盒11,每個晶盒11裝載有若干晶圓10。 As shown in FIG. 3A, the pre-cleaning machine 300 according to an embodiment of the present invention includes a water channel device 301 and a cleaning liquid tank 302 disposed adjacent to the water channel device 301. Exemplarily, the water channel 301 can accommodate 10 crystal cassettes 11, and the cleaning liquid tank 302 can accommodate 2 crystal cassettes 11, and each wafer cassette 11 is loaded with a plurality of wafers 10.

在本實施方式中,水道裝置301包括水槽3010和分別設置在水槽3010兩個相對的側壁上的進水口3011和出水口3012。水槽3010呈長方體槽狀,進水口3011和出水口3012設置在水槽3010的垂直於水槽3010延伸方向的側壁上。例如在圖3A中,水槽3010沿橫向(箭頭所示方向)延伸,進水口3011和出水口3012分別設置在水槽3010的垂直於水槽3010延伸方向的兩個側壁上(即左右兩個側壁上)。進水口3011和出水口3012的設置方式如圖3C所示,在水槽3010的側壁上均勻設置多個進/出水口,示例性地,例如進/出水口佈滿水槽3010的左右兩個側壁。這樣由於加進/出水口的密度增加,水流流動能力也增加。 In this embodiment, the water channel device 301 includes a water tank 3010 and a water inlet 3011 and a water outlet 3012 respectively disposed on two opposite side walls of the water tank 3010. The water tank 3010 is in the shape of a rectangular parallelepiped, and the water inlet 3011 and the water outlet 3012 are disposed on a side wall of the water tank 3010 that is perpendicular to the extending direction of the water tank 3010. For example, in FIG. 3A, the water tank 3010 extends horizontally (in the direction indicated by the arrow), and the water inlet 3011 and the water outlet 3012 are respectively disposed on two side walls of the water tank 3010 that are perpendicular to the extending direction of the water tank 3010 (that is, on the left and right side walls). . The arrangement of the water inlet 3011 and the water outlet 3012 is shown in FIG. 3C. A plurality of water inlet / outlet openings are evenly arranged on the sidewall of the water tank 3010. For example, the water inlet / outlet covers the left and right side walls of the water tank 3010. In this way, as the density of the inlet / outlet is increased, the flow capacity is also increased.

需要說明的是,水槽3010的延伸方向指的是水槽3010的長度方向或者晶盒11在水槽3010中的移動方向。 It should be noted that the extending direction of the water tank 3010 refers to the length direction of the water tank 3010 or the moving direction of the crystal box 11 in the water tank 3010.

當使用圖3A所示的預清洗機清洗晶圓時,晶盒11以使晶圓表面平行於晶盒移動方向/水槽延伸方向的方式投入水道裝置301中,這樣由進水口3011通入並由出水口3012流出的去離子水可以如圖3B所示沖刷每個晶圓10的表面,並將晶圓10上殘留的拋光液帶離,從而降低甚至避免拋光液對晶圓的腐蝕。清洗過程中,晶盒11在水道裝置301中沿圖3A中箭頭所示方向從左至右移動,並最終進入清洗液槽302中清洗。更具體地,如圖3D所示,每隔設定時間將水道中的前兩個晶盒移入清洗液槽302中,並將水道裝置301中後面的晶盒依次向前移動。 When the wafer is cleaned by using the pre-cleaner shown in FIG. 3A, the wafer box 11 is put into the water channel device 301 so that the wafer surface is parallel to the wafer box moving direction / sink tank extending direction. The deionized water flowing out of the water outlet 3012 can scour the surface of each wafer 10 as shown in FIG. 3B and take away the polishing liquid remaining on the wafer 10, thereby reducing or even avoiding the corrosion of the wafer by the polishing liquid. During the cleaning process, the crystal box 11 moves from left to right in the water channel device 301 in the direction shown by the arrow in FIG. 3A, and finally enters the cleaning liquid tank 302 for cleaning. More specifically, as shown in FIG. 3D, the first two crystal boxes in the water channel are moved into the cleaning liquid tank 302 every set time, and the rear crystal boxes in the water channel device 301 are sequentially moved forward.

在本實施方式中,同時提供一種預清洗方法,其使用圖3A所示的預清洗機,該預清洗方法包括:步驟S301:將裝載有待清洗晶圓的晶盒依次 放置在所述水道中,並且所述晶盒以使所述晶圓的表面平行於晶盒在所述水槽中的移動方向的方式放置。 In this embodiment, a pre-cleaning method is also provided. The pre-cleaning method shown in FIG. 3A is used. The pre-cleaning method includes: Step S301: sequentially placing a wafer cassette loaded with a wafer to be cleaned. It is placed in the water channel, and the crystal box is placed such that the surface of the wafer is parallel to the moving direction of the crystal box in the water tank.

具體地,通過機械手,將裝載有待清洗晶圓(例如最終拋光後預清洗之前的晶圓)的晶盒投入到水道裝置中,例如按先後順序自右至左投入到水道裝置中。 Specifically, the crystal box on which the wafer to be cleaned (for example, the wafer before pre-cleaning after final polishing) is loaded into the water channel device is placed by a robot, for example, from right to left in the water channel device.

步驟S302:在所述水道裝置中水洗所述晶圓。即利用由進水口通入並由出水口流出的去離子水沖刷每個晶圓的表面。 Step S302: Wash the wafer in the water channel device. That is, the surface of each wafer is flushed with deionized water that flows in through the water inlet and flows out from the water outlet.

步驟S303:按設定時間間隔依次將所述水道裝置中的所述晶盒放入清洗液槽中。在水道裝置中清洗預定時間後,通過機械手將水道裝置中前兩個晶盒移入清洗液槽中,並將水道裝置中後面的晶盒依次向前移動。並且,在通過機械手將水道裝置中前兩個晶盒移入清洗液槽中時,如圖3D所示將晶盒旋轉90度。 Step S303: Put the crystal box in the water channel device into a cleaning liquid tank in sequence at a set time interval. After the cleaning in the water channel device for a predetermined time, the first two crystal boxes in the water channel device are moved into the cleaning liquid tank by a mechanical hand, and the rear crystal boxes in the water channel device are sequentially moved forward. In addition, when the first two crystal boxes in the water channel device are moved into the cleaning liquid tank by the robot, the crystal boxes are rotated by 90 degrees as shown in FIG. 3D.

步驟S304:在所述清洗液槽中清洗所述晶圓。在清洗液槽中例如諸如SC1的清洗液清洗晶圓,以去除晶圓諸如殘留的拋光液、矽碎屑等顆粒,提高晶圓的顆粒性能。 Step S304: cleaning the wafer in the cleaning liquid tank. The wafer is cleaned in a cleaning liquid tank, such as SC1, to remove particles such as residual polishing liquid and silicon debris from the wafer, thereby improving the particle performance of the wafer.

實施例三:圖4A示出根據本發明另一實施方式的預清洗機的示意性俯視圖;圖4B示出使用圖4A所示預清洗機清洗時水流流過晶盒的示意圖;圖4C示出使用圖4A所示預清洗機清洗時晶盒移動過程示意圖。下面結合圖4A~圖4C對根據本發明一實施方式的預清洗機進行描述。 Embodiment 3: FIG. 4A is a schematic top view of a pre-cleaner according to another embodiment of the present invention; FIG. 4B is a schematic view of water flowing through a crystal box during cleaning using the pre-cleaner shown in FIG. 4A; FIG. 4C shows The schematic diagram of the movement of the crystal box during cleaning by using the pre-cleaner shown in FIG. 4A. The pre-cleaner according to an embodiment of the present invention is described below with reference to FIGS. 4A to 4C.

如圖4A所示,根據本發明一實施方式的預清洗機400包括第一水道裝置401、第二水道裝置402和與第二水道裝置402相鄰佈置的清洗液槽403。 示例性地,第一水道裝置401可以容納2個晶盒11,第二水道裝置402可以容納8個晶盒11,清洗液槽403可以容納2個晶盒11,每個晶盒11裝載有若干晶圓10。 As shown in FIG. 4A, the pre-cleaner 400 according to an embodiment of the present invention includes a first water channel device 401, a second water channel device 402, and a cleaning liquid tank 403 disposed adjacent to the second water channel device 402. Exemplarily, the first water channel device 401 can accommodate two crystal boxes 11, the second water channel device 402 can accommodate eight crystal boxes 11, and the cleaning liquid tank 403 can accommodate two crystal boxes 11. Each crystal box 11 is loaded with several Wafer 10.

在本實施方式中,第一水道裝置401採用類似實施例一中所公開的水道的結構。具體地,第一水道裝置401包括第一水槽4010和分別設置在第一水槽4010兩個相對的側壁上的第一進水口4011和第一出水口4012。第一水槽4010呈正方體槽狀,第一進水口4011和第一出水口4012設置在第一水槽4010的兩個相對的側壁上,例如前後兩個側壁。第一進水口4011和第一出水口4012的設置方式與如圖3C所示類似,在第一水槽4010的側壁上均勻設置多個進/出水口,示例性地,例如進/出水口佈滿第一水槽4010的前後兩個側壁。這樣由於加進/出水口的密度增加,水流流動能力也增加。 In this embodiment, the first water channel device 401 adopts a structure similar to the water channel disclosed in the first embodiment. Specifically, the first water channel device 401 includes a first water tank 4010 and a first water inlet 4011 and a first water outlet 4012 respectively disposed on two opposite side walls of the first water tank 4010. The first water tank 4010 has a rectangular parallelepiped shape. The first water inlet 4011 and the first water outlet 4012 are disposed on two opposite side walls of the first water tank 4010, for example, two front and rear side walls. The arrangement of the first water inlet 4011 and the first water outlet 4012 is similar to that shown in FIG. 3C. A plurality of water inlet / outlet openings are evenly arranged on the side wall of the first water tank 4010. For example, the water inlet / outlet openings are full. Front and rear side walls of the first water tank 4010. In this way, as the density of the inlet / outlet is increased, the flow capacity is also increased.

在本實施方式中,第二水道裝置402採用類似實施例二中所公開的水道的結構。具體地,第二水道裝置402包括第二水槽4020和分別設置在第二水槽4020兩個相對的側壁上的進水口4021和出水口4022。第二水槽4020呈長方體槽狀,第二進水口4021和出水口4022設置在第二水槽4020的垂直于第二水槽4020延伸方向的側壁上。例如在圖4A中,第二水槽4020沿橫向(箭頭所示方向)延伸,第二進水口4021和第二出水口4022分別設置在第二水槽4020的垂直于第二水槽4020延伸方向的兩個側壁上(即左右兩個側壁上)。第二進水口4021和第二出水口4022的設置方式如圖3C所示,在第二水槽4020的側壁上均勻設置多個進/出水口,示例性地,例如進/出水口佈滿第二水槽4020的左右兩個側壁。這樣由於加進/出水口的密度增加,水流流動能力也增加。 In this embodiment, the second water channel device 402 adopts a structure similar to the water channel disclosed in the second embodiment. Specifically, the second water channel device 402 includes a second water tank 4020 and a water inlet 4021 and a water outlet 4022 respectively disposed on two opposite side walls of the second water tank 4020. The second water tank 4020 has a rectangular parallelepiped shape. The second water inlet 4021 and the water outlet 4022 are disposed on a side wall of the second water tank 4020 that is perpendicular to the extending direction of the second water tank 4020. For example, in FIG. 4A, the second water tank 4020 extends in the lateral direction (the direction shown by the arrow), and the second water inlet 4021 and the second water outlet 4022 are respectively disposed at two of the second water tank 4020 that are perpendicular to the extending direction of the second water tank 4020. On the side walls (that is, on the left and right side walls). The manner of setting the second water inlet 4021 and the second water outlet 4022 is shown in FIG. 3C. A plurality of water inlet / outlet openings are evenly arranged on the side wall of the second water tank 4020. For example, for example, the water inlet / outlet is covered with the second water outlet. The left and right side walls of the water tank 4020. In this way, as the density of the inlet / outlet is increased, the flow capacity is also increased.

需要說明的是,第二水槽4020的延伸方向指的是第二水槽4020的長度方向或者晶盒11在第二水槽4020中的移動方向。 It should be noted that the extending direction of the second water tank 4020 refers to the length direction of the second water tank 4020 or the moving direction of the crystal box 11 in the second water tank 4020.

當使用圖4A所示的預清洗機清洗晶圓時,晶盒11以使晶圓表面垂直於晶盒移動方向/第一水槽延伸方向的方式投入第一水道裝置401中,這樣由第一進水口4011通入並由第一出水口4012流出的去離子水可以如圖4B中左圖所示沖刷每個晶圓10的表面,並將晶圓10上殘留的拋光液帶離,從而降低甚至避免拋光液對晶圓的腐蝕。晶盒11在第一水道裝置401中清洗完之後,如圖4C所示通過機械手取出並放入第二水道402中,在放入第二水道裝置402時旋轉90度,以使晶圓表面平行直於晶盒移動方向/第二水槽延伸方向,這樣由第二進水口4021通入並由第二出水口4022流出的去離子水可以如圖4C所示沖刷每個晶圓10的表面,並將晶圓10上殘留的拋光液進一步帶離,從而降低甚至避免拋光液對晶圓的腐蝕。清洗過程中,晶盒11在第二水道裝置402中沿圖4A中箭頭所示方向從左至右移動,並最終進入清洗液槽403中清洗。更具體地,如圖4C所示,每隔設定時間將第二水道裝置402中的前兩個晶盒移入清洗液槽403中,並將第二水道402中後面的晶盒依次向前移動。 When the wafer is cleaned by using the pre-cleaner shown in FIG. 4A, the wafer box 11 is put into the first water channel device 401 such that the wafer surface is perpendicular to the wafer box moving direction / first water tank extension direction. The deionized water flowing in through the water outlet 4011 and flowing out from the first water outlet 4012 can flush the surface of each wafer 10 as shown in the left figure in FIG. 4B and take away the polishing liquid remaining on the wafer 10, thereby reducing or even Avoid the corrosion of the wafer by the polishing solution. After the crystal box 11 is cleaned in the first water channel device 401, as shown in FIG. 4C, the crystal box 11 is taken out by a robot and placed in the second water channel 402. When the crystal box 11 is placed in the second water channel device 402, it is rotated 90 degrees to make the wafer surface Parallel to the crystal box moving direction / second water tank extension direction, so that the deionized water flowing in through the second water inlet 4021 and flowing out from the second water outlet 4022 can flush the surface of each wafer 10 as shown in FIG. 4C. The polishing liquid remaining on the wafer 10 is further taken away, thereby reducing or even avoiding the corrosion of the wafer by the polishing liquid. During the cleaning process, the crystal box 11 moves from left to right in the second water channel device 402 in the direction shown by the arrow in FIG. 4A, and finally enters the cleaning liquid tank 403 for cleaning. More specifically, as shown in FIG. 4C, the first two crystal cassettes in the second water channel device 402 are moved into the cleaning liquid tank 403 every set time, and the rear crystal cassettes in the second water channel 402 are sequentially moved forward.

在本實施方式中,同時提供一種預清洗方法,其使用圖4A所示的預清洗機,該預清洗方法包括:步驟S401:將裝載有待清洗晶圓的晶盒放置在所述第一水道裝置中,並且使所述晶圓的表面垂直於所述晶盒在所述第一水槽中的移動方向,也即平行於第一進水口和第一出水口的連線方向。 In this embodiment, a pre-cleaning method is also provided. The pre-cleaning method shown in FIG. 4A is used. The pre-cleaning method includes: Step S401: placing a crystal box loaded with a wafer to be cleaned in the first water channel device. And the surface of the wafer is perpendicular to the moving direction of the crystal box in the first water tank, that is, parallel to the connecting direction of the first water inlet and the first water outlet.

具體地,通過機械手,將裝載有待清洗晶圓(例如最終拋光後預清洗之前的晶圓)的晶盒投入到第一水道裝置中,例如按先後順序自右至左投入到第一水道中。 Specifically, the crystal box on which the wafer to be cleaned (for example, the wafer before the pre-cleaning after the final polishing) is loaded into the first water channel device is put into the first water channel from right to left in a sequential order by a robot arm. .

步驟S402:在所述第一水道裝置中清洗所述晶圓。即利用由第一進水口通入並由第一出水口流出的去離子水沖刷每個晶圓的表面。 Step S402: cleaning the wafer in the first water channel device. That is, the surface of each wafer is flushed with deionized water that flows in through the first water inlet and flows out from the first water outlet.

步驟S403:將所述第一水道裝置中的所述晶盒放置到所述第二水道中,並且使所述晶圓的表面平行於所述晶盒在所述第二水槽中的移動方向。在第一水道裝置中清洗預定時間後,通過機械手將第一水道中的兩個晶盒移入第二水道中,並將第二水道裝置中前面的晶盒依次向前移動。並且,在通過機械手將第一水道中的兩個晶盒移入第二水道中時,如圖4C所示將晶盒旋轉90度。 Step S403: Place the crystal box in the first water channel device into the second water channel, and make the surface of the wafer parallel to the moving direction of the crystal box in the second water tank. After cleaning in the first water channel device for a predetermined time, the two crystal boxes in the first water channel are moved into the second water channel by the robot, and the crystal boxes in the front of the second water channel device are sequentially moved forward. In addition, when the two crystal boxes in the first water channel are moved into the second water channel by the robot, the crystal boxes are rotated by 90 degrees as shown in FIG. 4C.

步驟S404:在所述第二水道裝置中水洗所述晶圓。即利用由第二進水口通入並由第二出水口流出的去離子水沖刷每個晶圓的表面。 Step S404: Wash the wafer in the second water channel device. That is, the surface of each wafer is flushed with deionized water flowing in through the second water inlet and flowing out through the second water outlet.

步驟S405:按設定時間間隔依次將所述第二水道裝置中的所述晶圓放入清洗液槽中。即在第二水道裝置中清洗預定時間後,通過機械手將第二水道裝置中前兩個晶盒移入清洗液槽中,並將第二水道裝置中後面的晶盒依次向前移動。並且,在通過機械手將第二水道裝置中前兩個晶盒移入清洗液槽中時,如圖4C所示將晶盒旋轉90度。 Step S405: Put the wafers in the second water channel device into a cleaning liquid tank in sequence at a set time interval. That is, after cleaning for a predetermined time in the second water channel device, the first two crystal boxes in the second water channel device are moved into the cleaning liquid tank by a robot, and the rear crystal boxes in the second water channel device are sequentially moved forward. In addition, when the first two crystal boxes in the second water channel device are moved into the cleaning liquid tank by the robot, the crystal boxes are rotated by 90 degrees as shown in FIG. 4C.

步驟S406:在所述清洗液槽中清洗所述晶圓。在清洗液槽中例如諸如SC1的清洗液清洗晶圓,以去除晶圓諸如殘留的拋光液、矽碎屑等顆粒,提高晶圓的顆粒性能。 Step S406: cleaning the wafer in the cleaning liquid tank. The wafer is cleaned in a cleaning liquid tank, such as SC1, to remove particles such as residual polishing liquid and silicon debris from the wafer, thereby improving the particle performance of the wafer.

本發明已經通過上述實施例進行了說明,但應當理解的是,上述實施例只是用於舉例和說明的目的,而非意在將本發明限制於所描述的實施例範圍內。此外本領域技術人員可以理解的是,本發明並不局限於上述實施例,根據本發明的教導還可以做出更多種的變型和修改,這些變型和修改均落在本發明所要求保護的範圍以內。本發明的保護範圍由附屬的申請專利範圍及其等效範圍所界定。 The present invention has been described through the above embodiments, but it should be understood that the above embodiments are only for the purpose of illustration and description, and are not intended to limit the present invention to the scope of the described embodiments. In addition, those skilled in the art can understand that the present invention is not limited to the above-mentioned embodiments. According to the teachings of the present invention, more variations and modifications can be made, and these variations and modifications all fall within the scope of protection of the present invention. Within range. The protection scope of the present invention is defined by the scope of the attached patent application and its equivalent scope.

Claims (5)

一種用於預清洗機的水道裝置,包括:第一水道,所述第一水道包括第一水槽和設置在所述第一水槽中的側壁上的第一進水口和第一出水口,並且所述第一進水口和所述第一出水口分別設置在所述第一水槽的與所述第一水槽延伸方向平行的兩個側壁上;第二水道,所述第二水道包括第二水槽和設置在所述第二水槽中的側壁上的第二進水口和第二出水口,並且所述第二進水口和所述第二出水口分別設置在所述第二水槽的與所述第二水槽延伸方向垂直的兩個側壁上。A water channel device for a pre-washing machine includes a first water channel, the first water channel including a first water tank and a first water inlet and a first water outlet provided on a side wall in the first water tank, and The first water inlet and the first water outlet are respectively disposed on two side walls of the first water tank parallel to the extending direction of the first water tank; a second water channel, the second water channel includes a second water tank and A second water inlet and a second water outlet provided on a side wall in the second water tank, and the second water inlet and the second water outlet are respectively provided in the second water tank and the second water tank The sink extends on two side walls that are perpendicular. 如請求項1所述的用於預清洗機的水道裝置,其中所述第一水槽能夠容納兩個晶盒,所述第二水槽能夠容納8個晶盒。The water channel device for a pre-washing machine according to claim 1, wherein the first water tank can accommodate two crystal boxes, and the second water tank can accommodate eight crystal boxes. 一種預清洗機,包括請求項1所述的水道裝置以及與所述第二水道相鄰佈置的清洗液槽。A pre-cleaning machine includes the water channel device according to claim 1 and a cleaning liquid tank arranged adjacent to the second water channel. 一種預清洗方法,該方法使用請求項3所述的預清洗機,包括:將裝載有待清洗晶圓的晶盒放置在所述第一水道中,並且使所述晶圓的表面垂直於所述晶盒在所述第一水槽中的移動方向;在所述第一水道中清洗所述晶圓;將所述第一水道中的所述晶盒放置到所述第二水道中,並且使所述晶圓的表面平行於所述晶盒在所述第二水槽中的移動方向;在所述第二水道中水洗所述晶圓;按設定時間間隔依次將所述第二水道中的所述晶圓放入清洗液槽中;在所述清洗液槽中清洗所述晶圓。A pre-cleaning method using the pre-cleaning machine according to claim 3, comprising: placing a crystal box loaded with a wafer to be cleaned in the first water channel, and making a surface of the wafer perpendicular to the wafer The moving direction of the crystal box in the first water tank; cleaning the wafer in the first water channel; placing the crystal box in the first water channel into the second water channel, and The surface of the wafer is parallel to the moving direction of the crystal box in the second water tank; the wafer is washed in the second water channel; and the wafer in the second water channel is sequentially set at a set time interval. The wafer is placed in a cleaning liquid tank; the wafer is cleaned in the cleaning liquid tank. 如請求項4所述的預清洗方法,其中所述第一水道能夠容納2個晶盒,所述第二水道能夠容納8個晶盒。The pre-cleaning method according to claim 4, wherein the first water channel can accommodate two crystal boxes, and the second water channel can accommodate eight crystal boxes.
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