TWI690979B - Substrate processing device and cleaning method of substrate processing device - Google Patents
Substrate processing device and cleaning method of substrate processing device Download PDFInfo
- Publication number
- TWI690979B TWI690979B TW107137195A TW107137195A TWI690979B TW I690979 B TWI690979 B TW I690979B TW 107137195 A TW107137195 A TW 107137195A TW 107137195 A TW107137195 A TW 107137195A TW I690979 B TWI690979 B TW I690979B
- Authority
- TW
- Taiwan
- Prior art keywords
- tank
- liquid
- treatment
- processing
- pipe
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 310
- 239000000758 substrate Substances 0.000 title claims abstract description 121
- 238000000034 method Methods 0.000 title claims description 49
- 238000004140 cleaning Methods 0.000 title claims description 26
- 239000007788 liquid Substances 0.000 claims abstract description 373
- 238000001914 filtration Methods 0.000 claims abstract description 4
- 239000002699 waste material Substances 0.000 claims description 105
- 238000011084 recovery Methods 0.000 claims description 69
- 208000028659 discharge Diseases 0.000 claims description 39
- 238000005406 washing Methods 0.000 claims description 33
- 238000007599 discharging Methods 0.000 claims description 8
- 238000011144 upstream manufacturing Methods 0.000 claims description 7
- 238000012790 confirmation Methods 0.000 claims description 5
- 238000007654 immersion Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 41
- 238000012986 modification Methods 0.000 description 23
- 230000004048 modification Effects 0.000 description 23
- 239000000126 substance Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 5
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 235000011007 phosphoric acid Nutrition 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
- B01D35/02—Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
本發明的基板處理裝置包括:處理槽,貯存處理液,並使基板浸漬;處理液供給部件,將所述處理液供給至所述處理槽;排液配管,作為使所述處理液自所述處理槽朝裝置外進行排液時的流路;循環配管,具備過濾所述處理液的過濾器,且至少一端與所述處理槽連通;旁通配管,作為將所述循環配管與所述排液配管連通,使經所述過濾器過濾的所述處理液不返回至所述處理槽而進行排液時的流路;開閉閥,切換自所述處理槽排出的所述處理液的流路;以及控制部件,控制所述開閉閥。The substrate processing apparatus of the present invention includes: a processing tank that stores a processing liquid and immerses the substrate; a processing liquid supply member that supplies the processing liquid to the processing tank; and a liquid discharge pipe as the processing liquid from the A flow path when the treatment tank discharges liquid out of the device; a circulation pipe equipped with a filter for filtering the treatment liquid, and at least one end communicates with the treatment tank; a bypass pipe serves as the circulation pipe and the drain Liquid piping communicates so that the treatment liquid filtered by the filter does not return to the treatment tank and drains the flow path; opens and closes the valve to switch the flow path of the treatment liquid discharged from the treatment tank ; And a control component that controls the on-off valve.
Description
本發明是有關於一種使用處理液對基板進行處理的基板處理裝置及基板處理方法,更具體而言,是有關於一種對基板進行利用處理液的處理後,對處理槽、配管、過濾器、泵等接觸了處理液的裝置各部進行洗淨的技術。再者,本說明書中所說的基板中例如包含:半導體晶圓、液晶顯示器用基板、電漿顯示器用基板、有機電致發光(electroluminescence,EL)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩基板、陶瓷基板、太陽能電池用基板等。The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a processing liquid, and more specifically, to a processing tank, piping, filter, etc. The technique of washing each part of the device such as a pump that has been in contact with the treatment liquid In addition, the substrates mentioned in this specification include, for example, semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for organic electroluminescence (EL), substrates for optical discs, substrates for magnetic discs, Substrates for magneto-optical discs, photomask substrates, ceramic substrates, substrates for solar cells, etc.
在使用藥液、純水等處理液進行基板的處理的此種裝置中,將處理液貯存於處理槽,並使處理液於處理液循環用的配管與處理槽之間循環,從而進行基板的處理。而且,於所述的循環用的配管中,配置有壓送處理液的泵、去除混入至處理液中的金屬等顆粒(particle)的過濾器、處理液的溫度調節用的加熱器等。In such a device that uses a processing solution such as a chemical liquid or pure water to process a substrate, the processing liquid is stored in the processing tank, and the processing liquid is circulated between the piping for circulating the processing liquid and the processing tank to perform substrate processing. deal with. In addition, the circulation piping described above is provided with a pump that pressurizes the treatment liquid, a filter that removes particles such as metals mixed into the treatment liquid, a heater for adjusting the temperature of the treatment liquid, and the like.
於使用如所述般的構成的裝置進行基板處理的情況下,將處理液排出後,於處理槽內或配管內(特別是過濾器、泵等)會殘留顆粒、或包含顆粒的處理液。In the case of performing substrate processing using an apparatus configured as described above, after the processing liquid is discharged, particles or a processing liquid containing particles may remain in the processing tank or piping (especially filters, pumps, etc.).
因此,先前以來,於基板處理後,使用純水對處理槽內、配管內進行清掃。例如,記載有如下技術:專利文獻1記載的基板處理裝置包括:處理槽,包含內槽與外槽;循環配管,將內槽與外槽連通連接,且用以使處理液循環;純水供給部,對所述外槽供給純水;排液配管,將貯存於所述內槽的純水排出,且自所述純水供給部將純水供給至外槽,利用所述循環配管將貯存於所述外槽的純水輸送至所述內槽,並將貯存於所述內槽的純水排出至所述排液配管,藉由同時且連續地執行所述供給、所述輸送、所述排出的全部或所述步驟中的至少兩個,使純水於所述內槽、所述外槽、所述循環配管中流通的同時來進行洗淨,經過規定的洗淨時間後或供給了規定量的純水後,使來自所述純水供給部的純水的供給停止。Therefore, in the past, after the substrate processing, the inside of the processing tank and the piping was cleaned with pure water. For example, the following technology is described: the substrate processing apparatus described in
藉由此種構成,自純水供給部供給的純水於包含外槽、循環配管、內槽、排液配管的成為一條通道的路徑流通,故能夠一邊使純水流通一邊利用純水對各部進行洗淨。With such a configuration, the pure water supplied from the pure water supply unit circulates through a path including an outer tank, a circulation pipe, an inner tank, and a drain pipe, so that the pure water can be used for each part while circulating the pure water Perform washing.
但是,根據所述般的構成,因於配管內流通的純水暫時經由處理槽而進行排液,故殘留於配管內(特別是過濾器)的顆粒會藉由用以洗淨的純水而被運送至處理槽內。因此,存在無法完全去除處理槽內的顆粒的課題。However, according to the above-mentioned configuration, since the pure water flowing in the piping is temporarily drained through the treatment tank, the particles remaining in the piping (especially the filter) are removed by the pure water used for washing It is transported to the treatment tank. Therefore, there is a problem that particles in the treatment tank cannot be completely removed.
另外,當使用純水進行洗淨時,純水會殘留於處理槽及配管內。如此當為殘留有純水的狀態時,藉此,下一次會稀釋用於基板處理的藥液,故於嚴格要求藥液的濃度管理的情況下,就會存在難以使用純水對處理槽及配管內進行洗淨的情況。In addition, when pure water is used for washing, pure water will remain in the treatment tank and piping. In this way, when pure water remains, the chemical solution used for substrate processing will be diluted next time. Therefore, when strict concentration control of the chemical solution is required, it may be difficult to use pure water for the treatment tank and Washing in piping.
因此,考慮使用潔淨的藥液(以下,亦稱為新液)代替純水來進行處理槽及配管內洗淨,但於使用藥液的情況下無法與純水同樣地進行排液。即,為了防止使用後的藥液(以下,亦稱為廢液)因廢棄而對環境造成的不良影響,需要進行規定的處理,但於進行所述處理的設備中無法輸送剛剛進行基板處理後的高溫的廢液。因此,需要將用於基板處理的經加熱的廢液暫時回收至冷卻罐,並冷卻至規定溫度後輸送至之後的工序。Therefore, it is considered to use a clean chemical solution (hereinafter, also referred to as a new solution) instead of pure water for washing in the treatment tank and piping, but when using the chemical solution, it is not possible to perform drainage in the same way as pure water. That is, in order to prevent the adverse effect of the used chemical solution (hereinafter also referred to as waste solution) on the environment due to disposal, a predetermined treatment is required, but the equipment that performs the treatment cannot be transported immediately after the substrate treatment High temperature waste liquid. Therefore, it is necessary to temporarily collect the heated waste liquid used for substrate processing in a cooling tank, cool it to a predetermined temperature, and then transport it to a subsequent process.
因此,若冷卻罐中不存在空閒容量,則無法對藥液進行排液,特別是剛剛進行基板處理後,為於冷卻罐中收容有大量的高溫的廢液的狀態,故不可能為了處理槽及配管內的洗淨將大量的藥液一次進行流通·排液。 [現有技術文獻] [專利文獻]Therefore, if there is no free capacity in the cooling tank, the chemical liquid cannot be drained. Especially after the substrate processing, a large amount of high-temperature waste liquid is contained in the cooling tank, so it is impossible to treat the tank And the washing in the piping circulates and drains a large amount of chemical solution at once. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本專利特開2016-63204號公報[Patent Document 1] Japanese Patent Laid-Open No. 2016-63204
[發明所欲解決之課題] 本發明鑒於所述般的問題,目的在於提供一種於使用處理液對進行基板處理的基板處理裝置的處理槽及配管內進行洗淨的情況下,將對所述配管內洗淨後的洗淨液不經由處理槽而進行排液的技術。 [解決課題之手段][Problems to be Solved by the Invention] In view of the above-mentioned problems, the present invention aims to provide a method for cleaning the processing tank and piping of a substrate processing apparatus that performs substrate processing using a processing liquid. The technique of draining the washing liquid after washing in the piping without going through the treatment tank. [Means to solve the problem]
為了達成所述目的,本發明採用以下的構成。In order to achieve the above object, the present invention adopts the following configuration.
本發明的基板處理裝置是利用處理液對基板進行處理的基板處理裝置,其包括:處理槽,貯存所述處理液,並使基板浸漬;處理液供給部件,將所述處理液供給至所述處理槽;排液配管,作為使所述處理液自所述處理槽朝裝置外進行排液時的流路;循環配管,具備過濾所述處理液的過濾器,且至少一端與所述處理槽連通;旁通配管,作為將所述循環配管與所述排液配管連通,使經所述過濾器過濾的所述處理液不返回至所述處理槽而進行排液時的流路;開閉閥,切換自所述處理槽排出的所述處理液的流路;以及控制部件,控制所述開閉閥。The substrate processing apparatus of the present invention is a substrate processing apparatus that processes a substrate using a processing liquid, and includes: a processing tank that stores the processing liquid and immerses the substrate; and a processing liquid supply member that supplies the processing liquid to the Treatment tank; liquid discharge pipe as a flow path for discharging the treatment liquid from the treatment tank toward the outside of the device; circulation pipe, equipped with a filter for filtering the treatment liquid, and at least one end and the treatment tank Communication; bypass piping as a flow path when the circulation piping and the drain piping are connected, so that the treatment liquid filtered by the filter does not return to the treatment tank for draining; opening and closing the valve To switch the flow path of the processing liquid discharged from the processing tank; and a control part to control the on-off valve.
根據所述般的構成,藉由使用開閉閥來切換處理液的流路,能夠使自處理槽排出、且通過循環配管的處理液不返回至處理槽而經由旁通配管進行排液。因此,於使用處理液對配管內進行洗淨的情況下,能夠使殘留於包含過濾器的配管內的廢液及顆粒不返回至處理槽,而對配管內進行洗淨。According to the general configuration described above, by switching the flow path of the processing liquid using the on-off valve, the processing liquid discharged from the processing tank and passing through the circulation piping can be discharged through the bypass piping without returning to the processing tank. Therefore, when the inside of the piping is washed with the processing liquid, the waste liquid and particles remaining in the piping including the filter can be washed in the piping without returning to the processing tank.
另外,亦可為:所述循環配管的一端連接於所述處理槽,另一端連接於排液配管,於所述開閉閥中,包含單通排液閥,所述單通排液閥切換使自所述處理槽排出的所述處理液僅通過所述排液配管而進行排液的流路、與使自所述處理槽排出的所述處理液自所述排液配管朝所述循環配管流動的流路,於使自所述處理槽排出的所述處理液自所述排液配管朝所述循環配管流動的情況下,所述循環配管可形成與所述處理槽之間使所述處理液能夠循環的流路。藉由所述構成,於使處理液循環時,能夠將排液配管活用作用於循環的流路的一部分。Alternatively, one end of the circulation pipe may be connected to the processing tank, and the other end may be connected to a drain pipe. The on-off valve may include a single-pass drain valve, and the single-pass drain valve may be switched The treatment liquid discharged from the treatment tank discharges only through the drainage pipe, and the flow path for discharging the treatment liquid from the treatment tank from the drainage pipe toward the circulation pipe The flow channel is such that when the treatment liquid discharged from the treatment tank flows from the drainage pipe toward the circulation pipe, the circulation pipe may be formed between the treatment tank and the treatment tank. The flow path through which the treatment liquid can circulate. With the above-described configuration, when the processing liquid is circulated, the drain pipe can be used as a part of the flow path for circulation.
另外,亦可為:所述排液配管的一端連接於所述處理槽,且所述排液配管於該配管內的上游處具備切換是否自所述處理槽排出所述處理液的處理槽排液閥,所述循環配管的一端與所述處理槽連通,另一端連接於所述排液配管的較所述處理槽排液閥更靠下游處,且所述循環配管包括位於所述過濾器與所述處理槽之間的處理槽循環閥,所述旁通配管的一端於所述過濾器與所述處理槽循環閥之間與所述循環配管連接,另一端於較連接有所述循環配管的位置更靠下游處與所述排液配管連接,且所述旁通配管包括對所述旁通配管內的流路進行開閉的循環排液閥,所述控制部件可藉由對所述處理槽排液閥、單通排液閥、處理槽循環閥、循環排液閥的各閥進行開閉控制,進行使自所述處理槽排出的所述處理液於所述循環配管的一部分及所述旁通配管內流通,且不返回至所述處理槽而進行排液的循環排液處理。Alternatively, one end of the drainage pipe may be connected to the treatment tank, and the drainage pipe may have a treatment tank row for switching whether to discharge the treatment liquid from the treatment tank upstream of the pipe. A liquid valve, one end of the circulation pipe communicates with the treatment tank, and the other end is connected to the drainage pipe more downstream of the treatment tank drainage valve, and the circulation pipe includes a filter located on the filter A processing tank circulation valve between the processing tank, one end of the bypass piping is connected to the circulation piping between the filter and the processing tank circulation valve, and the other end is connected to the circulation The position of the piping is further downstream connected to the drain piping, and the bypass piping includes a circulation drain valve that opens and closes the flow path in the bypass piping. Each valve of the treatment tank drain valve, one-way drain valve, treatment tank circulation valve, and circulation drain valve is controlled to open and close, and the treatment liquid discharged from the treatment tank is allowed to flow through a part of the circulation piping and The bypass piping circulates, and does not return to the processing tank to perform a circular drainage process of draining.
若為所述般的構成,則可簡單地構成配管及閥的組合。另外,針對各閥即便不個別地進行開閉指示,亦能夠藉由控制部件進行的處理,使處理液不返回至處理槽,而進行配管內的洗淨。再者,於本說明書中,所謂上游、下游是將排液配管的處理槽排液閥側設為上遊,按照自處理槽排出的處理液的流動來定義。With the above-described configuration, the combination of piping and valve can be easily configured. In addition, even if each valve is not individually instructed to open and close, it is possible to perform cleaning in the piping without returning the processing liquid to the processing tank by the processing performed by the control member. In addition, in this specification, the term "upstream" and "downstream" refers to the upstream side of the processing tank discharge valve of the liquid discharge pipe, and is defined according to the flow of the processing liquid discharged from the processing tank.
另外,亦可為:更具有回收自所述處理槽排出的處理液的廢液回收罐,所述排液配管的一端連接於所述處理槽,另一端連接於所述廢液回收罐,所述控制部件獲取所述廢液回收罐的剩餘容量的資訊,於所述廢液回收罐中存在規定的剩餘容量的情況下,將該規定的剩餘容量以下的處理液自所述處理槽排出,來進行所述循環排液處理。Alternatively, it may be a waste liquid recovery tank that recovers the treatment liquid discharged from the treatment tank. One end of the drainage pipe is connected to the treatment tank, and the other end is connected to the waste liquid recovery tank. The control unit acquires information on the remaining capacity of the waste liquid recovery tank, and when there is a predetermined remaining capacity in the waste liquid recovery tank, discharges the processing liquid having a predetermined remaining capacity or less from the processing tank, To perform the circulating drainage treatment.
若為所述構成,則可於廢液回收罐中存在空間的情況下,使用藥液對配管內進行洗淨。藉此,於下一次的基板處理時,不會因殘留於處理槽及配管內的純水而稀釋藥液的濃度,而能夠對配管內進行處理。According to the above configuration, when there is space in the waste liquid recovery tank, the inside of the piping can be washed with the chemical liquid. Thereby, in the next substrate processing, the concentration of the chemical solution is not diluted by the pure water remaining in the processing tank and the piping, and the processing in the piping can be performed.
再者,若配管內一次通液的液量過少,則會對配管內進行有效洗淨產生障礙,故為了對配管內進行有效洗淨,宜規定必要的每次通液量的下限。所述下限的量可根據裝置的規格、被處理的基板的種類、被處理的基板的片數、所使用的處理液的種類等條件,藉由實驗或模擬來規定。In addition, if the amount of liquid in the pipe is too small, it will cause an obstacle to effective cleaning in the pipe. Therefore, in order to effectively clean the pipe, it is advisable to specify the necessary lower limit of each liquid flow. The amount of the lower limit can be determined by experiment or simulation according to conditions such as the specifications of the device, the type of substrate to be processed, the number of substrates to be processed, and the type of processing liquid used.
另外,亦可為:所述處理槽包括使基板浸漬的內槽、及以包圍內槽的周圍的方式配置的外槽,所述排液配管包括與所述內槽連接的內槽排液配管部、及與所述外槽連接的外槽排液配管部,且所述廢液回收罐的規定的剩餘容量被設定為所述外槽的容積以上,所述控制部件獲取所述廢液回收罐的剩餘容量的資訊,於所述廢液回收罐中存在規定的剩餘容量的情況下,將貯存於所述外槽的處理液全部排出,來進行所述循環排液處理。In addition, the processing tank may include an inner tank in which the substrate is immersed, and an outer tank disposed so as to surround the periphery of the inner tank, and the drain pipe may include an inner tank drain pipe connected to the inner tank And an outer tank drain piping connected to the outer tank, and the predetermined remaining capacity of the waste liquid recovery tank is set to be equal to or larger than the volume of the outer tank, and the control unit acquires the waste liquid recovery Information on the remaining capacity of the tank, when there is a predetermined remaining capacity in the waste liquid recovery tank, all the processing liquid stored in the outer tank is discharged to perform the circulating liquid discharge process.
若為所述般的構成,則可以將外槽的容積設為限度的量來管理一次的通液量,從而能夠抑制無需供給及排出多的處理液,故結果能夠提高基板的處理效率,亦可進行處理液的節約。With the above-described configuration, the volume of the outer tank can be controlled to a limited amount to control the amount of liquid passing through, and it is possible to suppress the need to supply and discharge a large amount of processing liquid. As a result, the processing efficiency of the substrate can be improved. The treatment liquid can be saved.
另外,亦可為:所述處理液供給部件以將處理液供給至所述內槽的方式配置,所述處理槽為使自所述內槽溢出的處理液貯存於所述外槽的構成,處理液朝所述外槽的供給經由所述內槽來進行。In addition, the processing liquid supply member may be arranged to supply the processing liquid to the inner tank, and the processing tank is configured to store the processing liquid overflowing from the inner tank in the outer tank. The treatment liquid is supplied to the outer tank through the inner tank.
若為所述般的構成,則於進行配管內的洗淨時,可進行內槽及外側均不漏出的洗淨。進而,處理槽及配管內的洗淨完成後,成為內槽被處理液充滿的狀態,故而可迅速執行下一個基板處理。即,用於配管內洗淨的處理液的供給可兼用作下一個基板處理的準備。According to the above-described configuration, when washing in the piping, washing can be performed without leakage from the inner tank and the outside. Furthermore, after the cleaning in the processing tank and piping is completed, the inner tank is filled with the processing liquid, so that the next substrate processing can be quickly performed. That is, the supply of the processing liquid for cleaning in the piping can also be used as preparation for the next substrate processing.
另外,亦可為:所述廢液回收罐具備將回收至罐內的處理液排出的流路及開閉該流路的廢液閥,所述控制部件獲取回收至所述廢液回收罐的處理液的溫度資訊,於所述廢液回收罐內不存在規定的剩餘容量的情況下,只要所述廢液回收罐內的處理液的溫度為規定的溫度以下,則藉由進行所述廢液閥的開閉控制而自所述廢液回收罐排出所述處理液,並對所述廢液回收罐確保規定的剩餘容量後,進行所述循環排液處理。In addition, the waste liquid recovery tank may include a flow path that discharges the treatment liquid recovered into the tank and a waste liquid valve that opens and closes the flow path, and the control unit may acquire the treatment recovered in the waste liquid recovery tank Temperature information of the liquid, when there is no predetermined remaining capacity in the waste liquid recovery tank, as long as the temperature of the processing liquid in the waste liquid recovery tank is below the specified temperature, the waste liquid The valve is controlled to open and close to discharge the treatment liquid from the waste liquid recovery tank, and after the predetermined residual capacity is secured for the waste liquid recovery tank, the circulation liquid drainage process is performed.
若為所述般的構成,則與廢液回收罐的剩餘容量無關,可藉由控制部件自動地執行用於進行配管內洗淨的必要的處理,故沒有等待操作員的操作(指示)的時間,而可提高裝置的利用率。With the above-mentioned configuration, regardless of the remaining capacity of the waste liquid recovery tank, the necessary processing for washing in the piping can be automatically performed by the control unit, so there is no need to wait for the operator's operation (instruction) Time, and can improve the utilization rate of the device.
另外,亦可為:所述控制部件獲取執行利用所述處理液的基板的處理的次數及進行所述循環排液處理的次數的資訊,每次完成規定次數的基板處理後,重覆進行規定次數的所述循環排液處理。In addition, the control unit may obtain information on the number of times the substrate processing using the processing liquid is executed and the number of times the circulating liquid discharge processing is performed, and each time a predetermined number of substrate processings are completed, the control is repeated. The number of times of said circular drainage treatment.
若為所述般的構成,則可於適於洗淨的任意時機,以達成適當的殘留顆粒的去除率的次數,自動地進行用於配管內洗淨的處理。再者,所述次數可根據裝置的規格、被處理的基板的種類、被處理的基板的片數、所使用的處理液的種類等條件,藉由實驗或模擬來規定。With the above-described configuration, the treatment for washing in the piping can be automatically performed at any timing suitable for washing, at a number of times to achieve an appropriate removal rate of residual particles. Furthermore, the number of times may be determined by experiment or simulation according to conditions such as the specifications of the device, the type of substrate to be processed, the number of substrates to be processed, and the type of processing liquid used.
另外,本發明的基板處理裝置的洗淨方法是具有如下構件的基板處理裝置的洗淨方法,所述基板處理裝置包括:處理槽,具備貯存處理液且進行基板的浸漬處理的內槽及貯存自該內槽溢出的所述處理液的外槽;排液配管,自所述處理槽排出所述處理液;循環配管,連接於所述排液配管,並將所述內槽與所述排液配管連通;以及旁通配管,連接於所述循環配管及所述排液配管,形成自所述循環配管避開處理槽的流路,且所述基板處理裝置的洗淨方法包括:洗淨準備步驟,將用於所述浸漬處理的使用完的處理液自所述處理槽排出;處理槽洗淨步驟,將潔淨的處理液供給至所述內槽,進而經由所述內槽將處理液供給至所述外槽;配管洗淨步驟,將所述潔淨的處理液僅自外槽排出,並經由所述排液配管、所述循環配管、及旁通配管而進行排液。In addition, the cleaning method of the substrate processing apparatus of the present invention is a cleaning method of a substrate processing apparatus having the following components, the substrate processing apparatus including: a processing tank including an inner tank that stores a processing liquid and performs substrate immersion processing and storage An outer tank of the treatment liquid overflowing from the inner tank; a drainage pipe to discharge the treatment liquid from the treatment tank; a circulation pipe connected to the drainage pipe and connecting the inner tank and the drain The liquid piping is connected; and the bypass piping is connected to the circulation piping and the drainage piping to form a flow path that avoids the processing tank from the circulation piping, and the cleaning method of the substrate processing apparatus includes: washing In the preparation step, the used treatment liquid used for the immersion treatment is discharged from the treatment tank; in the treatment tank cleaning step, the clean treatment liquid is supplied to the inner tank, and then the treatment liquid is passed through the inner tank It is supplied to the outer tank; in the pipe washing step, the cleaned processing liquid is discharged from the outer tank only, and the liquid is drained through the drain pipe, the circulation pipe, and the bypass pipe.
若為所述方法,則能夠使自處理槽排出、且於循環配管內流通的處理液不返回至處理槽而進行排液,故能夠使殘留於配管內的廢液及顆粒不返回至處理槽,而能夠對處理槽內及配管內進行洗淨。According to the above method, the processing liquid discharged from the processing tank and circulating in the circulation piping can be discharged without returning to the processing tank, so that the waste liquid and particles remaining in the piping can not be returned to the processing tank , And can wash the inside of the treatment tank and piping.
另外,於所述配管洗淨步驟中,可將一次排出的處理液的量規定為未滿所述外槽的容積的規定量。若為所述般的方法,則可以將外槽的容積設為限度的規定量單位來管理一次的通液量,從而能夠抑制無需供給及排出多的處理液,故結果能夠提高基板的處理效率,亦可進行處理液的節約。In addition, in the piping washing step, the amount of the processing liquid discharged once may be specified as a predetermined amount that is less than the volume of the outer tank. According to the above-mentioned general method, the volume of the outer tank can be controlled to a predetermined amount unit to control the amount of fluid flow once, and it is possible to suppress the need to supply and discharge a large amount of processing liquid, so as a result, the processing efficiency of the substrate can be improved , You can also save the treatment liquid.
另外,亦可為:所述基板處理裝置更包括回收使用完的處理液的廢液回收罐,作為所述外槽配管洗淨步驟的前工序,可具有確認所述廢液回收罐中是否存在與所述規定量相應的空間的罐剩餘容量確認步驟。In addition, the substrate processing apparatus may further include a waste liquid recovery tank for recovering used processing liquid. As a pre-process of the outer tank piping cleaning step, it may be provided to confirm whether the waste liquid recovery tank exists Step of confirming the remaining tank capacity in the space corresponding to the prescribed amount.
若為所述方法,則可於廢液回收罐中存在空間的情況下,使用藥液對配管內進行洗淨。藉此,於下一次基板處理時,不會因殘留於處理槽及配管內的純水而稀釋藥液的濃度,而可對配管內進行處理。According to the above method, when there is space in the waste liquid recovery tank, the inside of the piping can be washed with the chemical liquid. In this way, in the next substrate processing, the concentration of the chemical solution is not diluted by the pure water remaining in the processing tank and the piping, and the processing in the piping can be performed.
另外,亦可為:於所述罐剩餘容量確認步驟中,更包括罐剩餘容量確保步驟:於所述廢液回收罐中不存在與所述規定量相應的空間的情況下,確認所述廢液回收罐內的處理液的溫度是否為規定的可排液的溫度以下,若為可排液的溫度以下,則將所述廢液回收罐內的處理液自罐排出,若超過可排液的溫度,則重覆待機與確認直至成為可排液的溫度以下為止。In addition, it may be that the tank remaining capacity confirmation step further includes a tank remaining capacity ensuring step: when there is no space corresponding to the prescribed amount in the waste liquid recovery tank, confirm the waste Whether the temperature of the treatment liquid in the liquid recovery tank is below the prescribed dischargeable temperature, if it is below the dischargeable temperature, the treatment liquid in the waste liquid recovery tank is discharged from the tank, if it exceeds the dischargeable liquid Temperature, repeat the standby and confirmation until it becomes below the temperature at which the liquid can be discharged.
若為所述般的方法,則與廢液回收罐的剩餘容量無關,可自動地執行用於進行配管內洗淨的必要的處理,故無需等待操作員的操作(指示)的時間,而可提高裝置的利用率。 [發明的效果]According to the general method described above, regardless of the remaining capacity of the waste liquid recovery tank, the necessary processing for washing in the piping can be automatically performed, so there is no need to wait for the operation (instruction) of the operator. Improve device utilization. [Effect of invention]
根據本發明,能夠提供一種於使用處理液對進行基板處理的基板處理裝置的處理槽及配管內進行洗淨的情況下,將對所述配管內洗淨後的洗淨液不經由處理槽而進行排液的技術。According to the present invention, it is possible to provide a cleaning solution after washing the inside of the piping without passing through the processing tank when the processing tank and the piping of the substrate processing apparatus that performs substrate processing are cleaned using the processing liquid Techniques for drainage.
以下參照圖式,基於實施例對用以實施本發明的形態例示性地進行說明。Hereinafter, referring to the drawings, an embodiment of the present invention will be exemplarily described based on examples.
<實施例> (基板處理裝置的構成) 圖1是表示實施例的基板處理裝置1的概略構成的框圖。基板處理裝置1是將處理液貯存於處理槽11,使用保持基板的升降機(未圖示),使基板浸漬於該處理槽11來進行處理的所謂的批次式的裝置。<Example> (Configuration of Substrate Processing Apparatus) FIG. 1 is a block diagram showing a schematic configuration of a
再者,於本說明書中,「處理液」這一單詞是以包含藥液與純水的含義來使用。作為藥液,除了混合酸(硝酸、磷酸、醋酸的混合液)之外,還可列舉:例如,硫酸與過氧化氫水的混合液(sulfuric acid/hydrogen peroxide mixture,SPM)、臭氧過水(臭氧、過氧化氫水的混合液)、SC1(氨水與過氧化氫水的混合液)、SC2(鹽酸與過氧化氫水的混合液)、HF(氫氟酸)、H3PO4(磷酸)、FPM(氫氟酸與過氧化氫水的混合液)、FOM(氫氟酸與臭氧過水的混合液)等。所述處理液根據基板上的形成膜的種類、處理工序等而適宜地選擇性地使用。In addition, in this specification, the word "treatment liquid" is used to include the chemical liquid and pure water. As the chemical solution, in addition to the mixed acid (mixed solution of nitric acid, phosphoric acid, and acetic acid), for example, a mixed solution of sulfuric acid and hydrogen peroxide water (sulfuric acid/hydrogen peroxide mixture, SPM), and ozone over water ( Ozone, hydrogen peroxide water mixture), SC1 (ammonia water and hydrogen peroxide water mixture), SC2 (hydrochloric acid and hydrogen peroxide water mixture), HF (hydrofluoric acid), H3PO4 (phosphoric acid), FPM (Mixed solution of hydrofluoric acid and hydrogen peroxide water), FOM (mixed solution of hydrofluoric acid and ozone over water), etc. The processing liquid is appropriately and selectively used according to the type of film formed on the substrate, processing steps, and the like.
處理槽11是用以貯存作為處理液的各種藥液、純水等的容器,包括:進行基板的浸漬處理的內槽111、及以包圍內槽111的周圍的方式配置、且回收自內槽111溢出的處理液的外槽112。內槽111具有可收容載置基板的升降機的大小,外槽112是具有較內槽111小的收容量的容器。The
於內槽111的底部配置有排出內槽111內的處理液的內槽排液口(未圖示),且連接於後述的排液配管13的內槽排液配管部13a。另外,於內槽111的底部附近,分別沿著長邊方向側面內壁配置有處理液供給噴嘴(未圖示)、及處理液循環噴嘴(未圖示)。處理液供給噴嘴經由處理液供給管122而與處理液供給源121連接,根據配置於處理液供給管122的處理液噴嘴的開閉而朝內槽111供給處理液。處理液循環噴嘴與後述的循環配管14連接。At the bottom of the
於外槽112的底部配置有排出外槽112內的處理液的外槽排液口(未圖示),且連接於後述的排液配管13的外槽排液配管部13b。另外,外槽112包括檢測液面的高度(即,貯存的處理液的量)的位準感測器(例如,超聲波變位計等。未圖示)。An outer tank drain port (not shown) for discharging the processing liquid in the
基板處理裝置1具有將處理槽11與廢液回收罐17連接的排液配管13,所述排液配管13包括:與內槽111連接的內槽排液配管部13a及與外槽112連接的外槽排液配管部13b。於排液配管13的內槽排液配管部13a配置有內槽排液閥131,於外槽排液配管部13b配置有外槽排液閥132,根據所述閥的開閉來控制來自內槽111、外槽112的處理液的排出。再者,內槽排液閥131及外槽排液閥132相當於本發明的處理槽排液閥。另外,排液配管13更包括泵133、及配置於較泵133更靠下游處且較廢液回收罐17更靠上游處的單通排液閥134。The
廢液回收罐17包括廢液配管171及廢液閥172,於廢液閥172為打開狀態時,將罐內的廢液自廢液配管171排出至廢液處理設備等。另外,廢液回收罐17包括:檢測罐內的液面的高度的位準感測器(未圖示)、及測量罐內的廢液的溫度的溫度感測器(未圖示)。The waste
另外,基板處理狀裝置1具有循環配管14,所述循環配管14的一端連接於泵133與單通排液閥134之間,另一端連接於所述處理液循環噴嘴。循環配管14包括:過濾器141、位於過濾器141與處理液循環噴嘴之間的處理槽循環閥142、及加熱器143。In addition, the
另外,基板處理裝置1具有旁通配管15,所述旁通配管15的一端於過濾器141與處理槽循環閥142之間與循環配管14連接,另一端於較單通排液閥134更靠下游處與排液配管13連接。旁通配管15於其上游附近具備循環排液閥151。In addition, the
另外,基板處理裝置1具有控制部16。控制部16的作為硬體的構成與一般的電腦相同。即,構成為包括:鍵盤(keyboard)等輸入部、監視器(monitor)等輸出部、中央處理單元(Central Processing Unit,CPU)、唯讀記憶體(Read only memory,ROM)、隨機存取記憶體(Random access memory,RAM)及大容量儲存裝置等。控制部16與升降機、處理液供給源121、泵133、加熱器143、各部的閥、各種感測器等電性連接,藉由CPU執行規定的處理程式,自裝置各部的感測器獲取資訊,從而對裝置各部的動作進行控制。In addition, the
(處理液的流動) 圖2、圖3、圖4是分別表示閥的開閉狀況與處理液的流動的關係的圖。於所述般的裝置構成中,當單通排液閥134為開放狀態時,自處理槽11排出的處理液被直接回收至廢液回收罐17(參照圖2)。另一方面,當單通排液閥134為封閉狀態時,處理液流入至循環配管14。流入至循環配管14的處理液利用過濾器141被過濾,且若處理槽循環閥142開放,循環排液閥151為封閉的狀態,則自處理液循環噴嘴被供給至內槽111(參照圖3)。另一方面,若處理槽循環閥142封閉,循環排液閥151為開放的狀態,則處理液經由旁通配管15而被回收至廢液回收罐17(參照圖4)。(Flow of the processing liquid) FIGS. 2, 3, and 4 are diagrams showing the relationship between the opening and closing status of the valve and the flow of the processing liquid, respectively. In the general device configuration described above, when the one-
再者,於將基板浸漬於貯存有處理液的內槽111中,並進行基板的處理期間,成為內槽排液閥131為封閉狀態,外槽排液閥132為開放狀態,單通排液閥134為封閉狀態,處理槽循環閥142為開放狀態,循環排液閥151為封閉狀態。而且,自外槽112排出的處理液利用泵133被壓送,而流入至循環配管14,並視需要利用加熱器143進行加熱,於利用過濾器141過濾(去除顆粒)後,自處理液循環噴嘴被供給至內槽111。藉此,處理液自內槽111溢出至外槽112,故即便外槽排液閥132為開放狀態,外槽112亦不會變空,即便不供給新的處理液亦可利用循環的處理液進行基板的處理。Furthermore, during the process of immersing the substrate in the
(基板處理裝置的洗淨方法) 以下,參照圖5對本實施例的基板處理裝置1的洗淨的流程進行說明。圖5是表示自基板的處理結束後開始的洗淨的流程的流程圖。如圖5所示,基板的處理結束後,控制部16首先將單通排液閥134、內槽排液閥131及外槽排液閥132開放,將處理槽11內的處理液全部排出(步驟S101)。藉此,內槽111、外槽112(及配管內)成為空的狀態,經排出的處理液全部被回收至廢液回收罐17。再者,所述處理相當於洗淨準備步驟。(Washing Method of Substrate Processing Apparatus) Hereinafter, the flow of cleaning of the
接著,控制部16將內槽排液閥131及外槽排液閥132封閉,將處理液閥123開放。藉此,自處理液供給源121將新的(潔淨的)處理液供給至內槽111。而且,超過內槽111的容量而供給的處理液溢出至外槽112,於外槽112中亦貯存處理液。此處,貯存於外槽112的處理液的量由設置於外槽112的液面位準感測器檢測,並由控制部16獲取該資訊。而且,於貯存於外槽112的處理液的量達到規定量的情況下,控制部16將處理液閥123封閉,來停止供給處理液。藉此,成為內槽111及外槽112中填充有與規定量相應的處理液的狀態(步驟S102)。所述處理相當於處理槽11洗淨步驟。再者,自洗淨外槽的觀點出發,貯存於外槽的處理液的「規定量」理想的是設為與外槽的容積接近的值(自容積減去餘量所得的程度)。Next, the
接著,控制部16基於設於廢液罐的液面位準感測器的資訊,判斷廢液回收罐17中是否有規定的剩餘容量(步驟S103)。所述處理相當於罐剩餘容量確認步驟。再者,廢液回收罐17的「規定的剩餘容量」被設定為較步驟S102中所說的外槽的規定量大的值(例如,外槽112的容積)。Next, the
而且,於步驟S103中,於判定為不存在規定的剩餘容量的情況下,繼而,判斷廢液回收罐17內的廢液的溫度是否為規定的值(例如70℃)以下(步驟S104)。此處,於判定為廢液的溫度為規定的值以下的情況下,將廢液閥172開放,排出罐內的廢液(步驟S105),並返回至步驟S103。另一方面,於步驟S104中,於判定為廢液的溫度超過規定的值的情況下,等待規定時間後,再次重覆判斷廢液回收罐17內的廢液的溫度是否為規定的值以下的處理。再者,所述步驟S104及步驟S105的一系列的處理相當於罐剩餘容量確保步驟。In step S103, when it is determined that there is no predetermined remaining capacity, it is next determined whether the temperature of the waste liquid in the waste
再者,於步驟S105中,於將廢液回收罐17內的廢液排出的情況下,亦可未必需要將罐完全排空,而進行盡可能確保規定的剩餘容量部分的排出。另外,可一邊執行來自罐的排液一邊返回至步驟S103。In addition, in step S105, when the waste liquid in the waste
於步驟S103中,於判定為存在規定的剩餘容量的情況下,將外槽排液閥132設為開放狀態,將單通排液閥134設為封閉狀態,將處理槽循環閥142設為封閉狀態,將循環排液閥151設為開放狀態,將貯存於外槽112的處理液全量排出(步驟S106)。此時,經排出的處理液經由循環配管14及旁通配管15而被回收至廢液回收罐17,藉此對配管內進行洗淨(參照圖4)。所述處理相當於循環排液處理、配管洗淨步驟。In step S103, when it is determined that there is a predetermined remaining capacity, the outer
再者,自處理液供給源121新供給的處理液為常溫(約25℃),故當此處理液被回收至廢液回收罐17時,會促進罐內的廢液的冷卻。即,越進行使用新液的循環排液處理,越能夠迅速地將廢液排出至罐外,故於罐中存在規定的剩餘容量以上的空間的情況下,若直接進行循環排液處理,則可效率良好地確保廢液回收罐17的剩餘容量。Furthermore, the processing liquid newly supplied from the processing
接著,控制部16判斷進行步驟S106的循環排液處理的次數是否成為規定的重覆次數(例如三次)(步驟S107)。此處,於判定為達到規定的重覆次數的情況下,結束程序,於判定為未滿規定的重覆次數的情況下,返回至步驟S102並重覆處理。再者,為了進行所述判定,控制部16對進行循環廢液處理的次數計數,並保存於ROM等。Next, the
藉由以上般的基板處理裝置1的構成,能夠利用圖4所示的路線排出處理液,並且不會使殘留於配管內的廢液、顆粒等進入至處理槽11,而能夠洗淨處理槽11及配管內。因此,能夠將處理槽11內的潔淨度維持得高,藉此可提高基板處理的品質。With the configuration of the
另外,如上所述,使用與外槽112的規定量相應的處理液對配管內進行洗淨,故於基板處理裝置1的洗淨程序結束後,成為於內槽111中填充有潔淨的處理液的狀態。因此,能夠快速的實施下一個基板處理,而可提高裝置的處理量。進而,與將內槽111及外槽112全部進行排液來進行洗淨的情況相比,能夠節約處理液。In addition, as described above, the inside of the piping is cleaned with the processing liquid corresponding to the predetermined amount of the
另外,若廢液回收罐17中存在與外槽112的規定量相應的剩餘容量,則可進行洗淨處理,故無需等待廢液回收罐17變空,而可效率良好地進行洗淨處理。進而,如上所述,當使用新液進行洗淨處理時,罐內的廢液的溫度下降,故藉由提早進行洗淨處理的時機,亦能夠提早自廢液回收罐17排液的時機。藉由此種協同效應,能夠進一步減少待機時間,從而能夠有助於裝置的流通量的提高。In addition, if there is a surplus capacity corresponding to the predetermined amount of the
<變形例1> 再者,所述的實施例例如亦可進行如以下的各變形例般的變形。圖6是表示第1變形例的基板處理裝置1的概略構成的框圖。如圖6所示,本變形例在如下方面與所述實施例不同,即排液配管13於較單通排液閥134更下游處具備藥液排液閥135,且於該藥液排液閥135與單通排液閥134之間具有連接於排液配管13的純水排液配管136。<
純水排液配管136具備純水排液閥137,且於該純水排液閥137為開放狀態,藥液排液閥135為封閉狀態的情況下,處理液不會被回收至廢液回收罐17,而自純水排液配管136朝裝置外進行排液。The pure water discharge piping 136 is provided with a pure
若為所述構成,則於使用無需經由廢液回收罐17的處理液(例如純水)的情況下,可直接朝裝置外排出處理液。另一方面,當將純水排液閥137設為封閉狀態,將藥液排液閥135設為開放狀態,則處理液被回收至廢液回收罐17,故可根據使用的處理液而進行靈活的運用。According to the above configuration, when the processing liquid (for example, pure water) that does not need to pass through the waste
<變形例2> 圖7是表示第2變形例的基板處理裝置1的概略構成的框圖。如圖7所示,本變形例的基板處理裝置1與實施例相比於如下方面不同:不具備廢液回收罐17、廢液配管171、及廢液閥172。<Modification 2> FIG. 7 is a block diagram showing a schematic configuration of a
例如淋洗槽等,若決定僅使用無需經由廢液回收罐17的液體作為處理液,則藉由如此般簡化裝置構成,可削減成本及裝置的設置空間。再者,於該情況下,省略所述的罐剩餘容量確認步驟及罐剩餘容量確保步驟。For example, if it is determined that only a liquid that does not need to pass through the waste
<變形例3> 圖8是表示第3變形例的基板處理裝置1的概略構成的框圖。本變形例的基板處理裝置1構成為:於外槽112配置有處理液供給噴嘴,且處理液供給管122將處理液供給至位於外槽112的處理液供給噴嘴。<Modification 3> FIG. 8 is a block diagram showing a schematic configuration of a
若為所述構成,則可使處理液不經由內槽111而僅貯存於外槽112,來進行循環排液處理。於此種情況下,因無需等待填充內槽111,故與實施例相比,能夠縮短裝置的配管內洗淨自身所需的時間。According to the above-described configuration, the processing liquid can be stored in the
<變形例4> 圖9是表示第4變形例的基板處理裝置1的概略構成的框圖。如圖9所示,於本變形例中,循環配管14的下游側的一端與處理液供給管122連接。即,構成為:循環配管14的一端經由處理液供給管122(及處理液供給噴嘴)而與處理槽11相連。<Modification 4> FIG. 9 is a block diagram showing a schematic configuration of a
若為所述構成,則即便於使處理液於處理槽11循環的情況下,亦可移用處理液供給管122的一部分與處理液供給噴嘴。藉此可不設置處理液循環噴嘴,而能夠簡化裝置構成。With this configuration, even when the processing liquid is circulated through the
<變形例5> 圖10是表示第5變形例的基板處理裝置1的概略構成的框圖。如圖10所示,於本變形例中,單通排液閥134位於循環配管14,旁通配管15於較藥液排液閥135更靠下游處與排液配管13連接。即,於本變形例中,藉由將藥液排液閥135及純水排液閥137設為封閉狀態,將單通排液閥134設為開放狀態,來實施循環排液處理。而且,藉由循環排液處理而流入至旁通配管15的處理液被回收至廢液回收罐17。<Modification 5> FIG. 10 is a block diagram showing a schematic configuration of a
另外,本變形例的基板處理裝置1包括:於圖10所示般於循環配管14中將過濾器141的上游與下游連接的循環迂回配管145、及對該循環迂回配管145的流路進行開閉的循環迂回閥146。進而,於本變形例中,具有過濾器排液配管18,其一端連接於過濾器141,另一端於較連接循環配管14的位置更靠下游處與排液配管13連接,且該過濾器排液配管18具備過濾器排液閥181。In addition, the
根據所述構成,藉由將循環排液閥151封閉,將過濾器排液閥181開放,即便於本變形例中,於使用無需經由廢液回收罐17的處理液的情況下,亦可直接朝裝置外排出處理液。如此,基板處理裝置1的配管及閥的配置可於本發明的技術思想的範圍內自由地設定。According to the above configuration, by closing the
<其他> 再者,所述各例只不過是例示性地說明本發明,本發明並不限定於所述具體的態樣。本發明於其技術思想的範圍內可進行各種應用。例如,控制部16亦可管理基板的處理次數(片數),並針對規定的處理次數(片數),來執行所述實施例的循環排液處理。若如此,則能夠於將基板處理裝置的處理槽及配管內的清潔性維持在規定水準以上的狀態下,繼續實施基板處理。<Others> Furthermore, the above examples are merely illustrative of the present invention, and the present invention is not limited to the specific aspects. The invention can be used in various applications within the scope of its technical idea. For example, the
另外,於所述實施例中,將廢液回收罐17中的「規定的剩餘容量」設定得較貯存於外槽112的規定量的處理液大,當外槽112中貯存有規定量的處理液時,一次將所述處理液全量排出,但未必需要如此。例如,亦可將廢液回收罐17中的「規定的剩餘容量」設定為小的值,使自外槽112一次排出的處理液的量小於此值(即,亦可為利用一次排液而外槽112不會變空般的值)。In addition, in the above embodiment, the "predetermined remaining capacity" in the waste
另外,於所述各例中,僅示出了一個處理液供給部件(處理液供給源121、處理液供給管122、及處理液閥123),但亦可根據使用的處理液的種類來設置多個處理液供給部件。In addition, in the above examples, only one processing liquid supply member (processing
另外,於所述各例中,自外槽112排出處理液,並進行循環排液處理,但亦可藉由自內槽111排出新液,而進行循環排液處理。進而,於所述各例中,處理槽11為具備內槽111與外槽112的結構,但亦可為僅包含一個槽的處理槽。In addition, in the above examples, the treatment liquid is discharged from the
1‧‧‧基板處理裝置11‧‧‧處理槽13‧‧‧排液配管13a‧‧‧內槽排液配管部13b‧‧‧外槽排液配管部14‧‧‧循環配管15‧‧‧旁通配管16‧‧‧控制部17‧‧‧廢液回收罐18‧‧‧過濾器排液配管111‧‧‧內槽112‧‧‧外槽121‧‧‧處理液供給源122‧‧‧處理液供給管123‧‧‧處理液閥131‧‧‧內槽排液閥132‧‧‧外槽排液閥133‧‧‧泵134‧‧‧單通排液閥135‧‧‧藥液排液閥136‧‧‧純水排液配管137‧‧‧純水排液閥141‧‧‧過濾器142‧‧‧處理槽循環閥143‧‧‧加熱器145‧‧‧循環迂回配管146‧‧‧循環迂回閥151‧‧‧循環排液閥171‧‧‧廢液配管172‧‧‧廢液閥181‧‧‧過濾器排液閥S101~S107‧‧‧步驟1‧‧‧
圖1是表示實施例的基板處理裝置的概略構成的框圖。 圖2是表示實施例的基板處理裝置的閥的開閉狀況與處理液的流動的關係的第1說明圖。 圖3是表示實施例的基板處理裝置的閥的開閉狀況與處理液的流動的關係的第2說明圖。 圖4是表示實施例的基板處理裝置的閥的開閉狀況與處理液的流動的關係的第3說明圖。 圖5是表示實施例的基板處理裝置的洗淨的流程的流程圖。 圖6是表示第1變形例的基板處理裝置的概略構成的框圖。 圖7是表示第2變形例的基板處理裝置的概略構成的框圖。 圖8是表示第3變形例的基板處理裝置的概略構成的框圖。 圖9是表示第4變形例的基板處理裝置的概略構成的框圖。 圖10是表示第5變形例的基板處理裝置的概略構成的框圖。FIG. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus of an embodiment. 2 is a first explanatory diagram showing the relationship between the opening and closing conditions of the valve of the substrate processing apparatus of the embodiment and the flow of the processing liquid. 3 is a second explanatory diagram showing the relationship between the valve opening and closing conditions and the flow of the processing liquid of the substrate processing apparatus of the embodiment. 4 is a third explanatory diagram showing the relationship between the opening and closing status of the valve of the substrate processing apparatus of the embodiment and the flow of the processing liquid. 5 is a flowchart showing a flow of cleaning of the substrate processing apparatus of the embodiment. 6 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a first modification. 7 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a second modification. 8 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a third modification. 9 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a fourth modification. 10 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a fifth modification.
1‧‧‧基板處理裝置 1‧‧‧Substrate processing device
11‧‧‧處理槽 11‧‧‧Treatment tank
13‧‧‧排液配管 13‧‧‧Drainage piping
13a‧‧‧內槽排液配管部 13a‧‧‧Inner tank drain piping
13b‧‧‧外槽排液配管部 13b‧‧‧Outlet drain piping
14‧‧‧循環配管 14‧‧‧Circulation piping
15‧‧‧旁通配管 15‧‧‧Bypass piping
16‧‧‧控制部 16‧‧‧Control Department
17‧‧‧廢液回收罐 17‧‧‧ Waste liquid recovery tank
111‧‧‧內槽 111‧‧‧Inner slot
112‧‧‧外槽 112‧‧‧Outer slot
121‧‧‧處理液供給源 121‧‧‧Process liquid supply source
122‧‧‧處理液供給管 122‧‧‧Process liquid supply pipe
123‧‧‧處理液閥 123‧‧‧Treatment valve
131‧‧‧內槽排液閥 131‧‧‧Inner tank drain valve
132‧‧‧外槽排液閥 132‧‧‧Outlet drain valve
133‧‧‧泵 133‧‧‧Pump
134‧‧‧單通排液閥 134‧‧‧One-way drain valve
141‧‧‧過濾器 141‧‧‧filter
142‧‧‧處理槽循環閥 142‧‧‧Treatment tank circulation valve
143‧‧‧加熱器 143‧‧‧ Heater
151‧‧‧循環排液閥 151‧‧‧Circulation drain valve
171‧‧‧廢液配管 171‧‧‧ Waste liquid piping
172‧‧‧廢液閥 172‧‧‧ Waste valve
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-204671 | 2017-10-23 | ||
JP2017204671A JP7056852B2 (en) | 2017-10-23 | 2017-10-23 | Cleaning method for board processing equipment and board processing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201923832A TW201923832A (en) | 2019-06-16 |
TWI690979B true TWI690979B (en) | 2020-04-11 |
Family
ID=66247386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107137195A TWI690979B (en) | 2017-10-23 | 2018-10-22 | Substrate processing device and cleaning method of substrate processing device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7056852B2 (en) |
KR (1) | KR102382902B1 (en) |
CN (1) | CN111316400A (en) |
TW (1) | TWI690979B (en) |
WO (1) | WO2019082661A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7181156B2 (en) * | 2019-05-31 | 2022-11-30 | 株式会社Screenホールディングス | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD |
JP7491791B2 (en) | 2020-09-15 | 2024-05-28 | 株式会社Screenホールディングス | Processing liquid supply device and supply tank cleaning method |
CN112530790B (en) * | 2020-11-03 | 2022-01-11 | 长江存储科技有限责任公司 | Wafer cleaning device and wafer cleaning method |
JP2022108144A (en) * | 2021-01-12 | 2022-07-25 | 株式会社ジャパンディスプレイ | Immersing apparatus |
CN113053791B (en) * | 2021-04-23 | 2022-11-29 | 上海珩旭机电设备有限公司 | Nitrogen gas cleaning device |
CN113714188A (en) * | 2021-09-15 | 2021-11-30 | 新阳硅密(上海)半导体技术有限公司 | Surface exhaust equipment and method for single-chip immersion type wet treatment process |
CN113787049A (en) * | 2021-09-15 | 2021-12-14 | 新阳硅密(上海)半导体技术有限公司 | Groove type process method for single-chip wet treatment process |
CN113714201A (en) * | 2021-09-15 | 2021-11-30 | 新阳硅密(上海)半导体技术有限公司 | Groove type process system for single-chip wet treatment process |
CN113600554B (en) * | 2021-10-09 | 2021-12-07 | 南通欧能达超声设备有限公司 | Ultrasonic chip cleaning equipment |
CN115475797B (en) * | 2022-09-30 | 2024-04-05 | 肇庆绿宝石电子科技股份有限公司 | Laminated capacitor and manufacturing method thereof, carrier strip cleaning liquid and preparation method thereof |
CN115921410A (en) * | 2022-12-14 | 2023-04-07 | 西安奕斯伟材料科技有限公司 | Cleaning system and method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201521106A (en) * | 2013-09-27 | 2015-06-01 | Tokyo Electron Ltd | Etching method, etching device and memory medium |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3517134B2 (en) | 1998-12-03 | 2004-04-05 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
JP2002210422A (en) * | 2001-01-16 | 2002-07-30 | Sony Corp | Apparatus and method for cleaning substrate to be treated |
JP4668079B2 (en) * | 2006-01-30 | 2011-04-13 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
JP5890198B2 (en) | 2011-03-25 | 2016-03-22 | 株式会社Screenホールディングス | Substrate processing apparatus and substrate processing method |
JP5829446B2 (en) * | 2011-07-13 | 2015-12-09 | 株式会社Screenホールディングス | Substrate processing apparatus and liquid exchange method thereof |
JP5829458B2 (en) * | 2011-08-25 | 2015-12-09 | 株式会社Screenホールディングス | Substrate processing equipment |
JP2016063204A (en) | 2014-09-22 | 2016-04-25 | 株式会社Screenホールディングス | Cleaning method of substrate processing apparatus and substrate processing apparatus |
JP6326387B2 (en) * | 2015-03-19 | 2018-05-16 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus, substrate liquid processing method, and computer readable storage medium storing substrate liquid processing program |
-
2017
- 2017-10-23 JP JP2017204671A patent/JP7056852B2/en active Active
-
2018
- 2018-10-10 CN CN201880068015.8A patent/CN111316400A/en active Pending
- 2018-10-10 KR KR1020207012429A patent/KR102382902B1/en active IP Right Grant
- 2018-10-10 WO PCT/JP2018/037802 patent/WO2019082661A1/en active Application Filing
- 2018-10-22 TW TW107137195A patent/TWI690979B/en active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201521106A (en) * | 2013-09-27 | 2015-06-01 | Tokyo Electron Ltd | Etching method, etching device and memory medium |
Also Published As
Publication number | Publication date |
---|---|
JP2019079881A (en) | 2019-05-23 |
KR20200060483A (en) | 2020-05-29 |
JP7056852B2 (en) | 2022-04-19 |
KR102382902B1 (en) | 2022-04-04 |
CN111316400A (en) | 2020-06-19 |
WO2019082661A1 (en) | 2019-05-02 |
TW201923832A (en) | 2019-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI690979B (en) | Substrate processing device and cleaning method of substrate processing device | |
US20150020968A1 (en) | Substrate processing apparatus and substrate processing method | |
JP2006066727A (en) | Semiconductor manufacturing device and chemical exchanging method | |
KR102611293B1 (en) | Substrate liquid processing apparatus, substrate liquid processing method, and storage medium | |
JP2013207076A (en) | Processing liquid supply device and processing liquid supply method | |
JP2002210422A (en) | Apparatus and method for cleaning substrate to be treated | |
JP3138901B2 (en) | Substrate immersion processing equipment | |
KR101915358B1 (en) | Semiconductor cleaning device and cleaning method by it | |
JP3582680B2 (en) | Cleaning equipment | |
JP3701811B2 (en) | Substrate processing method and substrate processing apparatus | |
JP2000183024A (en) | Substrate-processing apparatus | |
JPH09162156A (en) | Treating method and treating system | |
KR100949096B1 (en) | Method for cleaning substrate | |
JP2016063204A (en) | Cleaning method of substrate processing apparatus and substrate processing apparatus | |
KR100794585B1 (en) | Apparatus and method for wet cleaning | |
JP3648096B2 (en) | Processing equipment | |
JP2010225832A (en) | Substrate processing apparatus and substrate processing method | |
KR100664787B1 (en) | Chemical exhaust system of cleaning bath | |
JP2005166847A (en) | Method and device for treating substrate | |
JPH11176793A (en) | Cleaning system | |
KR100873939B1 (en) | Substrate cleaning unit and method for treating exhaust of the substrate cleaning unit, and apparatus for treating substrate with the controll unit | |
JP4037178B2 (en) | Cleaning apparatus and cleaning method | |
JP4347787B2 (en) | Substrate processing equipment | |
JPH10163158A (en) | Cleaning apparatus for sheetlike body | |
JP4227694B2 (en) | Wafer surface treatment equipment |