KR940027087A - Cleaning process method of semiconductor device - Google Patents

Cleaning process method of semiconductor device Download PDF

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Publication number
KR940027087A
KR940027087A KR1019930009629A KR930009629A KR940027087A KR 940027087 A KR940027087 A KR 940027087A KR 1019930009629 A KR1019930009629 A KR 1019930009629A KR 930009629 A KR930009629 A KR 930009629A KR 940027087 A KR940027087 A KR 940027087A
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KR
South Korea
Prior art keywords
solution
oxide film
cleaning process
polysilicon layer
semiconductor device
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Application number
KR1019930009629A
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Korean (ko)
Inventor
이완기
김우진
이주영
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930009629A priority Critical patent/KR940027087A/en
Publication of KR940027087A publication Critical patent/KR940027087A/en

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Abstract

본 발명은 반도체 소자의 제조공정중 크린닝(Cleaning)공정방법에 관한 것으로, 특히 실리콘기판 또는 폴리실리콘층등의 표면에 형성된 산화막을 제거하기 위해 엣-크린닝(Wet-Cleaning)공정으로 웨이퍼를 HF용액에 담근후 건조시키면 실리콘기판 또는 폴리실리콘층 표면에 물자국(Water Mark)이 남게 되는데 이러한 물자국이 남지않도록 웨이퍼를 HF용액에서 1단계 크린닝을 실시하고 H2O2가 포함된 용액에서 2단계 크린닝을 실시하는 공정방법에 관한 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning process method of manufacturing a semiconductor device, and more particularly, to remove an oxide film formed on a surface of a silicon substrate or a polysilicon layer, such as a wet cleaning process. After immersing in HF solution and drying, water marks remain on the surface of the silicon substrate or polysilicon layer.The wafer is subjected to one-step cleaning in HF solution so that these water marks do not remain, and the solution contains H 2 O 2. Is a technique for a process method of performing a two-step cleaning.

Description

반도체 소자의 크린닝 공정방법Cleaning process method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 제1도 공정후 본 발명에 의해 HF크린닝 공정, H2O2가 포함된 용액에서 크린닝 공정 및 드라이공정을 순차적으로 실시한 단면도.3 is a cross-sectional view of the HF cleaning process, the cleaning process and the drying process in a solution containing H 2 O 2 according to the present invention after the process of FIG.

Claims (3)

반도체 소자의 엣-크린닝 공정에서 실리콘기판 또는 폴리실리콘층에 성장되고 파티클이 포함된 산화막을 제거하는 공정으로, 웨이퍼를 HF용액에서 1단계의 크린닝을 실시하여 산화막을 제거하고, H2O2가 포함된 용액에서 2단계의 크린닝을 실시하여 드라이공정후에도 실리콘기판 또는 폴리실리콘층의 표면에 물자국이 남지 않도록 하는 것을 특징으로 하는 크린닝 공정방법.A process of removing an oxide film containing particles and growing on a silicon substrate or polysilicon layer in an edge-cleaning process of a semiconductor device. The wafer is subjected to one-step cleaning in HF solution to remove the oxide film, and H 2 O A two- step cleaning in a solution containing 2 so that no material residues remain on the surface of the silicon substrate or the polysilicon layer even after the drying process. 제1항에 있어서, 상기 H2O2가 포함된 용액은 3 : 1의 H2SO4: H2O2, 1 : 1 : 5의 NH4OH : H2O2: D.I수 또는 1 : 1 : 5의 HCI : H2O2: D.I수인 것을 특징으로 하는 크린닝 공정방법.The solution of claim 1, wherein the solution containing H 2 O 2 is H 2 SO 4 : H 2 O 2 of 3: 1, NH 4 OH: H 2 O 2 : DI water of 1: 1, or 1: 1. A cleaning process method characterized in that 1: 1 HCI: H 2 O 2 : DI water. 제1항에 있어서, 상기 산화막은 폴리실리콘층에 불순물을 이온주입할 때 성장된 P2O5자연산화막인 것을 특징으로 하는 크린닝 공정방법.The method according to claim 1, wherein the oxide film is a P 2 O 5 natural oxide film grown when ion is implanted with impurities into a polysilicon layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930009629A 1993-05-31 1993-05-31 Cleaning process method of semiconductor device KR940027087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930009629A KR940027087A (en) 1993-05-31 1993-05-31 Cleaning process method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930009629A KR940027087A (en) 1993-05-31 1993-05-31 Cleaning process method of semiconductor device

Publications (1)

Publication Number Publication Date
KR940027087A true KR940027087A (en) 1994-12-10

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KR1019930009629A KR940027087A (en) 1993-05-31 1993-05-31 Cleaning process method of semiconductor device

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KR (1) KR940027087A (en)

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