KR950021187A - Wafer cleaning method - Google Patents

Wafer cleaning method Download PDF

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Publication number
KR950021187A
KR950021187A KR1019930030823A KR930030823A KR950021187A KR 950021187 A KR950021187 A KR 950021187A KR 1019930030823 A KR1019930030823 A KR 1019930030823A KR 930030823 A KR930030823 A KR 930030823A KR 950021187 A KR950021187 A KR 950021187A
Authority
KR
South Korea
Prior art keywords
cleaning
oxide film
wafer
impurities
cleaning method
Prior art date
Application number
KR1019930030823A
Other languages
Korean (ko)
Inventor
이완기
이주영
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930030823A priority Critical patent/KR950021187A/en
Publication of KR950021187A publication Critical patent/KR950021187A/en

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 불산(HF) 및 이소프로필 알콜(isopropyl alcohol)이 배합된 용액에서 웨이퍼 상의 자연 산화막 및 불순물을 제거하는 것을 특징으로 하는 웨이퍼 세정방법에 관한 것으로, 반도체 소자의 모든 세정공정에 적용되며, 열산화막 자연 산화막 제거 및 자연사화막 속에 함유된 불순물, 금속 이온 제거등에 뛰어난 효과가 있다. 특히, 반도체 제조공정에 세정 순서로 유기물을 제거하는 황산 세정 다음에 이 세정액을 사용하면 더 우수한 세정효과를 낼 수 있다.The present invention relates to a wafer cleaning method comprising removing a native oxide film and impurities on a wafer from a solution containing hydrofluoric acid (HF) and isopropyl alcohol, and is applied to all cleaning processes of semiconductor devices. The thermal oxide film has an excellent effect on removing the natural oxide film and removing impurities and metal ions contained in the natural desert film. In particular, the use of this cleaning solution after sulfuric acid cleaning in which organic matters are removed in the cleaning order in the semiconductor manufacturing process can produce a better cleaning effect.

Description

웨이퍼 세정방법Wafer cleaning method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1F도는 본 발명이 적용되는 반도체 제조공정도.1A to 1F are semiconductor manufacturing process diagrams to which the present invention is applied.

Claims (1)

불산(HF) 및 이소프로필 알콜(isopropyl alcohol)이 배합된 용액에서 웨이퍼 상의 자연 산화막 및 불순물을 제거하는 것을 특징으로 하는 웨이퍼 세정방법.A method of cleaning a wafer, comprising removing a native oxide film and impurities on a wafer from a solution containing hydrofluoric acid (HF) and isopropyl alcohol. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930030823A 1993-12-29 1993-12-29 Wafer cleaning method KR950021187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930030823A KR950021187A (en) 1993-12-29 1993-12-29 Wafer cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930030823A KR950021187A (en) 1993-12-29 1993-12-29 Wafer cleaning method

Publications (1)

Publication Number Publication Date
KR950021187A true KR950021187A (en) 1995-07-26

Family

ID=66853663

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930030823A KR950021187A (en) 1993-12-29 1993-12-29 Wafer cleaning method

Country Status (1)

Country Link
KR (1) KR950021187A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100495653B1 (en) * 1997-09-24 2005-09-30 삼성전자주식회사 Process for clearing an wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100495653B1 (en) * 1997-09-24 2005-09-30 삼성전자주식회사 Process for clearing an wafer

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