KR970008381A - Drying method of semiconductor device - Google Patents

Drying method of semiconductor device Download PDF

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Publication number
KR970008381A
KR970008381A KR1019950021398A KR19950021398A KR970008381A KR 970008381 A KR970008381 A KR 970008381A KR 1019950021398 A KR1019950021398 A KR 1019950021398A KR 19950021398 A KR19950021398 A KR 19950021398A KR 970008381 A KR970008381 A KR 970008381A
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KR
South Korea
Prior art keywords
wafer
drying
alcohol
distilled water
semiconductor device
Prior art date
Application number
KR1019950021398A
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Korean (ko)
Other versions
KR0165418B1 (en
Inventor
권영민
고용선
이현재
방주식
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950021398A priority Critical patent/KR0165418B1/en
Publication of KR970008381A publication Critical patent/KR970008381A/en
Application granted granted Critical
Publication of KR0165418B1 publication Critical patent/KR0165418B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Abstract

신규한 반도체장치의 건조방법이 개시되어 있다. 약액을 사용하여 웨이퍼를 세정한 후, 핫 증류수(Hot DIW)를 사용하여 상기 웨이퍼를 수세한다. 이어서, 알콜 증기를 사용하여 상기 웨이퍼를 건조시킨다. 핫 증류수에 의해 웨이퍼를 예열시킨 후 알콜 증기 건조방식으로 웨이퍼를 건조시킴으로써 알콜의 소모량을 절감시키고 웨이퍼 상의 국부적인 이상건조 현상을 방지할 수 있다.A novel method of drying a semiconductor device is disclosed. After cleaning the wafer using the chemical liquid, the wafer is washed with hot distilled water (Hot DIW). Alcohol vapor is then used to dry the wafer. Preheating the wafer with hot distilled water and then drying the wafer by alcohol vapor drying reduces the consumption of alcohol and prevents local abnormal drying on the wafer.

Description

반도체장치의 건조방법Drying method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3A도 및 제3B도는 각각, 종래방법 및 본 발명에 의한 건조공정 진행시 증기대의 온도 프로파일을 도시한 도면들, 제4A도 및 제4B도는 각각, 종래방법 및 본 발명에 의한 건조공정 실시후, 온도에 따른 미립자 갯수를 도시한 그래프들.3A and 3B show the temperature profile of the steam stage during the drying process according to the conventional method and the present invention, respectively. FIGS. 4A and 4B show the drying process according to the conventional method and the present invention, respectively. , Graphs showing the number of particulates with temperature.

Claims (4)

약액을 사용하여 웨이퍼를 세정하는 단계; 핫 증류수(Hot DIW)를 사용하여 상기 웨이퍼를 수세하는 단계; 및 알콜 증기를 사용하여 상기 웨이퍼를 건조시키는 단계를 구비하는 것을 특징으로 하는 반도체장치의 건조방법.Cleaning the wafer using the chemical liquid; Washing the wafer with hot distilled water (Hot DIW); And drying the wafer using alcohol vapor. 제1항에 있어서, 상기 핫 증류수를 사용하여 웨이퍼를 수세하는 단계 전에, 증류수(DIW)를 사용하여 상기 웨이퍼를 수세하는 단계를 더 구비하는 것을 특징으로 하는 반도체장치의 건조방법.2. The method of claim 1, further comprising: washing the wafer with distilled water (DIW) before washing the wafer with hot distilled water. 제1항에 있어서, 상기 수세단계에서 사용되는 핫 증류수의 온도가 40∼80℃ 사이의 범위 내에 있는 것을 특징으로 하는 반도체장치의 건조방법.The method of drying a semiconductor device according to claim 1, wherein the temperature of the hot distilled water used in the washing step is in a range of 40 to 80 ° C. 제1항에 있어서, 상기 알콜은 메탄알콜, 에탄알콜, 및 이소프로필알콜의 군에서 선택된 어느 하나인 것을 특징으로 하는 반도체장치의 건조방법.The method of claim 1, wherein the alcohol is any one selected from the group consisting of methane alcohol, ethane alcohol, and isopropyl alcohol. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950021398A 1995-07-20 1995-07-20 Drying method of semiconductor device KR0165418B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950021398A KR0165418B1 (en) 1995-07-20 1995-07-20 Drying method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950021398A KR0165418B1 (en) 1995-07-20 1995-07-20 Drying method of semiconductor device

Publications (2)

Publication Number Publication Date
KR970008381A true KR970008381A (en) 1997-02-24
KR0165418B1 KR0165418B1 (en) 1999-02-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950021398A KR0165418B1 (en) 1995-07-20 1995-07-20 Drying method of semiconductor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102528651A (en) * 2010-12-21 2012-07-04 中国科学院微电子研究所 Chemical mechanical polishing equipment and preheating method for same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030056205A (en) * 2001-12-27 2003-07-04 동부전자 주식회사 drying method of wafer
CN106252207B (en) * 2016-08-31 2019-05-24 广安市嘉乐电子科技有限公司 A kind of diode chip assembly acid cleaning process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102528651A (en) * 2010-12-21 2012-07-04 中国科学院微电子研究所 Chemical mechanical polishing equipment and preheating method for same

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Publication number Publication date
KR0165418B1 (en) 1999-02-01

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