KR970052662A - Impurity Removal Method of Semiconductor Device - Google Patents

Impurity Removal Method of Semiconductor Device Download PDF

Info

Publication number
KR970052662A
KR970052662A KR1019950055135A KR19950055135A KR970052662A KR 970052662 A KR970052662 A KR 970052662A KR 1019950055135 A KR1019950055135 A KR 1019950055135A KR 19950055135 A KR19950055135 A KR 19950055135A KR 970052662 A KR970052662 A KR 970052662A
Authority
KR
South Korea
Prior art keywords
cleaning
semiconductor device
surfactant
sodium hydroxide
silicon substrate
Prior art date
Application number
KR1019950055135A
Other languages
Korean (ko)
Inventor
김경진
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950055135A priority Critical patent/KR970052662A/en
Publication of KR970052662A publication Critical patent/KR970052662A/en

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 불순물 제거방법을 제공하는 것으로, 금속의 식각성을 가지는 수산화나틀륨 및 미세패턴의 침투를 용이하게 하는 계면활성제를 포함하는 세정액으로 실시하여 금속성 불순물을 완전히 제거함으로서 금속배선간의 양호한 접속으로 소자의 수율을 향상시킬 수 있는 효과가 있다.The present invention provides a method for removing impurities in a semiconductor device. The present invention provides a method for removing impurities from a metal by completely removing metallic impurities by performing a cleaning solution containing sodium hydroxide having an etching property of a metal and a surfactant that facilitates penetration of a fine pattern. There is an effect that the yield of the device can be improved by good connection.

Description

반도체 소자의 불순물 제거방법Impurity Removal Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 따른 반도체 소자의 불순물 제거방법을 설명하기 위한 구성도.2 is a block diagram illustrating a method for removing impurities in a semiconductor device according to the present invention.

Claims (4)

반도체 소자의 불순물 제거방법에 있어서, 패터닝된 감광막을 마스크로 이용하여 하부금속배선 및 상부금속배선을 접속하기 위한 비아콘택트홀을 건식 식각공정으로 형성하는 단계와, 상기 단계로부터 생성된 금속성 불순물을 제거하기 위한 제1차 세정공정으로 세정조에서 수산화나트륨 및 계면활성제를 포함하는 세정액을 이용하여 1차세정하는 단계와, 상기 단계로부터 1차 세정된 실리콘기판을 순수를 이용한 제2차 세정공정으로 2차세정을 하는 단계와, 상기 단계로부터 세정공정을 마친 실리콘기판을 회전건조기로 건조한 후 건식 식각공정으로 감광막을 제거하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 불순물 제거방법.In the impurity removing method of a semiconductor device, using a patterned photosensitive film as a mask to form a via contact hole for connecting the lower metal wiring and the upper metal wiring by a dry etching process, and removes the metallic impurities generated from the step In the first cleaning step to clean the first step using a cleaning solution containing sodium hydroxide and a surfactant in the cleaning tank, and the second cleaning step using a pure water to the second cleaning step of the silicon substrate first washed from the step And drying the silicon substrate, which has been cleaned from the step, by a rotary dryer, and removing the photoresist by a dry etching process. 제1항에 있어서, 상기 세정공정은 65내지 90℃의 온도에서 15내지 25분 동안 실시하는 것을 특징으로 하는 반도체 소자의 불순물 제거방법.The method of claim 1, wherein the cleaning process is performed at a temperature of 65 to 90 ° C. for 15 to 25 minutes. 제1항에 있어서, 상기 수산화나트륨은 순수와의 용량비가 1:1내지 1:1000인 것을 특징으로 하는 반도체 소자의 불순물 제거방법.The method of claim 1, wherein the sodium hydroxide has a capacity ratio of 1 to 1: 1000 with pure water. 제1항에 있어서, 상기 계면활성제는 비이온계 계면활성제인 것을 특징으로 하는 반도체 소자의 불순물 제거방법.The method of claim 1, wherein the surfactant is a nonionic surfactant. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950055135A 1995-12-23 1995-12-23 Impurity Removal Method of Semiconductor Device KR970052662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950055135A KR970052662A (en) 1995-12-23 1995-12-23 Impurity Removal Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950055135A KR970052662A (en) 1995-12-23 1995-12-23 Impurity Removal Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR970052662A true KR970052662A (en) 1997-07-29

Family

ID=66617588

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950055135A KR970052662A (en) 1995-12-23 1995-12-23 Impurity Removal Method of Semiconductor Device

Country Status (1)

Country Link
KR (1) KR970052662A (en)

Similar Documents

Publication Publication Date Title
TW467953B (en) New detergent and cleaning method of using it
KR100235937B1 (en) A method of manufacturing via contacts in a semiconductor device
KR20000070378A (en) Method for passivation of a metallization layer
KR970052662A (en) Impurity Removal Method of Semiconductor Device
JP3324181B2 (en) Wafer cleaning method
CN100446191C (en) Wet-type chemical washing method
KR950027976A (en) Trench cleaning method of semiconductor device
KR100203751B1 (en) Semiconductor fabricating method
KR100598287B1 (en) Method for cleaning the semiconductor device
KR100205096B1 (en) Removing method of photoresist film in the semiconductor device
KR970016835A (en) Removal method of fine particles generated in wet etching process of semiconductor device
KR100325622B1 (en) Cleaning process after forming line using conductive material
KR970030425A (en) Cleaning Method of Semiconductor Devices
KR19980055927A (en) Wafer drying method
KR970003582A (en) Semiconductor Wafer Cleaning Method
KR20010061313A (en) Cleaning apparatus having baths
KR970053520A (en) Method for removing reactive product generated in dry etching process of semiconductor device and metal wiring formation method using same
KR100373307B1 (en) Method for cleaning semiconductor device
KR980005899A (en) Stripping method of photoresist
KR19980039349A (en) Semiconductor Wafer Cleaning Method
KR950007648B1 (en) Method of treatment after etching
KR970003955A (en) PMOS TFT Load Cell Formation Method of Semiconductor Device
KR950007006A (en) Well cleaning process method of semiconductor device
KR980005900A (en) Wafer Cleaning Method of Semiconductor Device
KR100432894B1 (en) Method for forming metal line of semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application