KR950007648B1 - Method of treatment after etching - Google Patents

Method of treatment after etching Download PDF

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Publication number
KR950007648B1
KR950007648B1 KR1019920026846A KR920026846A KR950007648B1 KR 950007648 B1 KR950007648 B1 KR 950007648B1 KR 1019920026846 A KR1019920026846 A KR 1019920026846A KR 920026846 A KR920026846 A KR 920026846A KR 950007648 B1 KR950007648 B1 KR 950007648B1
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South Korea
Prior art keywords
etching
wafer
chamber
photoresist
substrate
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KR1019920026846A
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Korean (ko)
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KR940015708A (en
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손곤
정진기
설여송
김명선
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현대전자산업주식회사
김주용
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Priority to KR1019920026846A priority Critical patent/KR950007648B1/en
Priority to JP5336483A priority patent/JPH07176514A/en
Publication of KR940015708A publication Critical patent/KR940015708A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

forming a wiring pattern by etching unwanted material in an etching chamber, after forming the metal layer; locating the substrate in a spray chamber, after removing the sensitisation film; locating the substrate in a spray chamber; spraying the metal ion free developer including tetra methy amonium hydroxide, on the substrate; and locating the substrate in a washing chamber and washing with pure water or spin-cleaning.

Description

금속배선 식각후 처리방법Treatment method after etching metal wiring

본 발명은 고집적 반도체 소자의 금속배선에 관한 것으로, 특히 금속배선 식각시 형성되는 식각 측벽막을 제거하는 금속배선 식각후 처리방법에 관한 것이다.The present invention relates to metallization of highly integrated semiconductor devices, and more particularly, to a method for post-etching metallization to remove etching sidewall films formed during metallization etching.

일반적으로 알루미늄(Al) 금속배선을 식각하는 공정은 염화물(Cl)을 이용한 플라즈마(Plasma)에서 금속배선을 식각하고 불화물(F)로 치환한후 감광막을 제거하고 잔존하는 AlFx 및 AlxOy 측벽 폴리머(Palymer)를 제거하기 위하여 아민(Amin)을 포함한 용액을 이용하여 일정시간 담근후 IPA(Isopropylalcohol) 및 순수(D.I)로 세척을 한다. 그리고 세척 후에 스핀 건조(Spin Dry)하여 왔다.In general, a process of etching aluminum (Al) metal wiring is performed by etching metal wiring in a plasma using chloride (Cl), replacing it with fluoride (F), removing photoresist, and remaining AlFx and AlxOy sidewall polymer (Palymer). ) Soak for a certain period of time using a solution containing amine (Amin) to remove) and wash with IPA (Isopropylalcohol) and pure water (DI). And it has been spin dried after washing.

그러나 식각측벽에 잔존하는 Cl을 F로 치환하는 공정에서 식각 측벽에 형성되는 AlFx 폴리머는 끓는 점(Boiling Temperature)이 높기 때문에 용액에 담그게 되는 시간이 길어져 Al 어택(Attack) 현상이 발생할수 있으며 용액에 담글때 측벽 폴리머가 충분히 제거되지 않을 경우, 측벽 AlFx와 H2O가 반응하여 Al(OH)2+HF가 생성되어 부식현상이 발생하게 되는 문제점이 있었다.However, in the process of substituting Cl remaining on the etch side wall with F, the AlFx polymer formed on the etch side wall has a high boiling temperature, so that the time to be immersed in the solution may be long, resulting in an Al attack phenomenon. If the sidewall polymer is not sufficiently removed when immersed in, the sidewall AlFx and H 2 O reacts to produce Al (OH) 2 + HF to cause corrosion.

따라서 상기 문제점을 해결하기 위하여 안출된 본 발명은 폴리머의 충분한 제거, 금속선의 부식 방지, 금속 어택을 등을 방지하여 반도체 소자의 신뢰도를 높이는 금속배선 식각후 처리방법을 제공하는데 그 목적이 있다.Accordingly, an object of the present invention is to provide a method for treating metal wires after etching to increase the reliability of semiconductor devices by preventing sufficient removal of polymers, corrosion prevention of metal wires, and metal attack.

상기 목적을 달성하기 위하여 본 발명은, 금속배선 식각후 처리방법에 있어서, 식각챔버(Etching Chamber)에서 염화물을 이용하여 금속배선을 식각한후 고진공상태에서 감광막 제거 챔버로 웨이퍼를 이송하는 제1단계, 상기 제1단계 후에 O2및 CH2OH를 이용하여 감광막을 제거하고 곧 바로 웨이퍼를 스핀가능한 린스 컵(Rinse Cup)으로 이송하는 제2단계, 상기 제2단계 후에 상기 린스 컵에서 TMAH(Tetra Methy1 Amonium Hydroxide ; 이하 TMAH라 칭함)를 포함한 현상액 MIFD(Metal Ion Free Developer ; 이하 MIFD라 칭함)로 도포하는 제3단계, 및 상기 제3단계 후에 상기 금속배선이 형성되어져 있는 웨이퍼를 순수(D.I) 및 스핀(Spin) 세척을 하는 제4단계를 포함하여 이루어지는 것을 특징으로 한다.In order to achieve the above object, the present invention provides a first step of transferring a wafer to a photoresist removal chamber in a high vacuum state after etching the metal wiring using chloride in an etching chamber in the etching method after the metal wiring etching. And a second step of removing the photoresist using O 2 and CH 2 OH after the first step, and immediately transferring the wafer to a spinable rinse cup, and after the second step, TMAH (Tetra) in the rinse cup. A third step of coating with developer MIFD (Metal Ion Free Developer; hereinafter referred to as MIFD) containing Methy1 Amonium Hydroxide (hereinafter referred to as TMAH), and the wafer on which the metal wiring is formed after the third step is pure (DI) And a fourth step of performing a spin washing.

이하, 본 발명에 따른 일실시예를 상세히 설명하면 다음과 같다.Hereinafter, an embodiment according to the present invention will be described in detail.

먼저, 식각챔버에서 염화물을 이용하여 금속배선을 식각한후 고진공상태에서 감광막 제거 챔버로 웨이퍼를 보낸다.First, the metal wiring is etched using chloride in the etching chamber, and then the wafer is sent to the photoresist removing chamber in a high vacuum state.

감광막 제거 챔버로 이송된 웨이퍼는 O2및 CH2OH를 이용하여 감광막을 제거한후 곧바로 웨이퍼를 스핀 가능한 린스 컵(Rinse Cup)으로 이송한다.The wafer transferred to the photoresist removal chamber transfers the wafer to a spinable rinse cup immediately after removing the photoresist using O 2 and CH 2 OH.

이어서 상기 린스 컵에서 일정 시간 및 RPM에서 TMAH를 포함한 현상액 MID을 도포하고 순수(D.I) 및 스핀(Spin) 세척으로 웨이퍼를 세척한다.A developer MID including TMAH is then applied in the rinse cup at a predetermined time and RPM, and the wafer is cleaned by pure water (D.I) and spin washing.

상기 본 발명에 의한 금속배선후의 처리 공정에 대한 작용상태는 다음과 같다.The working state of the treatment process after the metal wiring according to the present invention is as follows.

Al 금속배선 식각후 고진공상태에서 식각된 웨이퍼를 감광막 제거 챔버로 이송함으로써 식각 측벽에 잔존하는 Cl을 F으로 치환하는 공정잉 생략되며, 감광막 제거시 O2가스에 소량의 CH2OH를 첨가함으로써 감광막을 제거함과 동시에 잔존 Cl이 CH3Cl로 제거된다. 또한 짧은 시간의 현상액 세척시에도 측벽 폴리머가 충분히 제거될 뿐아니라 금속선 부식 및 어택현상을 방지할 수 있다.After the Al metal wiring is etched, the wafer etched in the high vacuum state is transferred to the photoresist removal chamber, thereby eliminating Cl remaining on the etch sidewall by F. The photoresist is removed by adding a small amount of CH 2 OH to the O 2 gas. At the same time the remaining Cl is removed with CH 3 Cl. In addition, the sidewall polymer may be sufficiently removed even during a short time cleaning of the developer, and metal corrosion and attack may be prevented.

상기와 같이 이루어지는 본 발명은 금속 식각시 형성되는 AlClx로 감광막 애싱(Ashing)시 CH2Cl로 제거되며, 충분히 제거되지 않은 AlClx는 비등점이 낮기 때문에 현상제 세척시 충분히 제거되어 금속 부식이 방지되며 측벽 폴리머를 충분히 제거할 수 있다.The present invention made as described above is AlClx formed during metal etching is removed by CH 2 Cl during ashing (Ashing) of the photoresist, AlClx is not sufficiently removed because the boiling point is low enough to prevent the corrosion of the metal during developer cleaning and sidewalls The polymer can be removed sufficiently.

상기와 같이 이루어지는 본 발명은 TMAH를 포함한 현상액 MIFD(Metal Ion Free Developer)을 이용하여 금속배선 식각 및 감광막 제거후 식각 측벽에 잔존하는 폴리머를 제거하여 금속 부식을 방지함으로써 소자의 신뢰성을 향상시키는 효과가 있다.The present invention made as described above has the effect of improving the reliability of the device by preventing the metal corrosion by removing the polymer remaining on the etch sidewall after etching the metallization and photoresist using a developer MIFD (Metal Ion Free Developer) containing TMAH have.

Claims (2)

금속배선 식각후 처리방법에 있어서, 식각챔버(Etching Chamber)에서 염화물을 이용하여 금속배선을 식각한후 고진공상태에서 감광막 제거 챔버로 웨이퍼를 이송하는 제1단계, 상기 제1단계 후에 O2및 CH2OH를 이용하여 감광막을 제거하고 곧 바로 웨이퍼를 스핀 가능한 린스 컵(Rinse Cup)으로 이송하는 제2단계, 상기 제2단계 후에 상기 린스 컵에서 TMAH(Tetra Methy1 Amonium Hydroxid)를 포함한 현상액 MIFD(Metal Ion Free Developer)로 도포하는 제3단계, 상기 제3단계 후에 상기 금속배선이 형성되어져 있는 웨이퍼를 순수(D.I) 및 스핀(Spin) 세척을 하는 제4단계를 포함하여 이루어지는 것을 특징으로 하는 금속배선 식각후 처리방법.In the post-etching method of metallization, a first step of etching the metallization using chloride in an etching chamber and transferring the wafer to the photoresist removing chamber in a high vacuum state, and after the first step, O 2 and CH A second step of removing the photoresist using 2 OH and immediately transferring the wafer to a spinable rinse cup, and after the second step, the developer MIFD (Metal 1 Amonium Hydroxid) containing TMAH (Tetra Methy1 Amonium Hydroxid) in the rinse cup. And a fourth step of performing pure water (DI) and spin cleaning on the wafer on which the metal wiring is formed after the third step. Treatment method after etching. 제1항에 있어서, 상기 제2단계의 감광막 제거는 O2및 CH2OH를 이용하여 제거하는 것을 특징으로 하는 금속배선 식각후 처리방법.The method of claim 1, wherein the removal of the photoresist layer of the second step is performed using O 2 and CH 2 OH.
KR1019920026846A 1992-12-30 1992-12-30 Method of treatment after etching KR950007648B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019920026846A KR950007648B1 (en) 1992-12-30 1992-12-30 Method of treatment after etching
JP5336483A JPH07176514A (en) 1992-12-30 1993-12-28 Formation of metal wiring facilitating removal of polymer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920026846A KR950007648B1 (en) 1992-12-30 1992-12-30 Method of treatment after etching

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KR940015708A KR940015708A (en) 1994-07-21
KR950007648B1 true KR950007648B1 (en) 1995-07-13

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KR100983584B1 (en) * 2003-11-19 2010-09-27 엘지디스플레이 주식회사 Method for Forming Pattern

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JP3034259B2 (en) * 1989-03-31 2000-04-17 株式会社東芝 Organic compound film removal method
JPH04263423A (en) * 1991-02-18 1992-09-18 Kokusai Electric Co Ltd Continuous etching treatment method and device thereof
JPH04288823A (en) * 1991-03-13 1992-10-13 Mitsubishi Electric Corp Manufacture of semiconductor device
DE69219998T2 (en) * 1991-10-31 1997-12-18 Sgs Thomson Microelectronics Process for removing polymers from blind holes in semiconductor devices

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KR940015708A (en) 1994-07-21

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