KR940015708A - Treatment method after etching metal wiring - Google Patents

Treatment method after etching metal wiring Download PDF

Info

Publication number
KR940015708A
KR940015708A KR1019920026846A KR920026846A KR940015708A KR 940015708 A KR940015708 A KR 940015708A KR 1019920026846 A KR1019920026846 A KR 1019920026846A KR 920026846 A KR920026846 A KR 920026846A KR 940015708 A KR940015708 A KR 940015708A
Authority
KR
South Korea
Prior art keywords
etching
wafer
metal wiring
treatment method
photoresist
Prior art date
Application number
KR1019920026846A
Other languages
Korean (ko)
Other versions
KR950007648B1 (en
Inventor
손곤
정진기
설여송
김명선
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920026846A priority Critical patent/KR950007648B1/en
Priority to JP5336483A priority patent/JPH07176514A/en
Publication of KR940015708A publication Critical patent/KR940015708A/en
Application granted granted Critical
Publication of KR950007648B1 publication Critical patent/KR950007648B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)

Abstract

본 발명은 금속배선 식각후 처리방법에 있어서, 식각챔버(Etching Chamber)에서 염화물을 이용하여 금속배선을 식각한후 고진공상태에서 감광막 제거 챔버로 웨이퍼를 이송하는 제1단계, 상기 제1단계 후에 O2및 CH3OH를 이용하여 감광막을 제거하고 곧 바로 웨이퍼를 스핀 가능한 린스 컵(Rinse Cup)으로 이송하는 제2단계, 상기 제2단계 후에 상기 린스 컵에서 TMAH(Tetra Methyl Amonium Hydroxide)를 포함한 현상액 MIFD(Metal Ion Free Developer)로 도포하는 제3단계, 및 상기 제3단계 후에 상기 금속배선이 형성되어져 있는 웨이퍼를 순수(D.I) 및 스핀(Sping)세척을 하는 제4단계를 포함하여 이루어 지는 것을 특징으로 하는 금속배선 식각후 처리방법에 관한 것이다.The present invention relates to a post-etching treatment method of a metal wiring, comprising: etching a metal wiring using chloride in an etching chamber, and then transferring the wafer to a photoresist removing chamber in a high vacuum state, after the first step, A developer containing a tetramethyl ethyl monoxide (TMAH) in the rinsing cup after the second step of removing the photoresist using 2 and CH 3 OH and immediately transferring the wafer to a spinable rinse cup. A third step of applying a metal ion free developer (MIFD) and a fourth step of washing pure water (DI) and spin of the wafer on which the metal wiring is formed after the third step. The present invention relates to a metal wire etching method after etching.

Description

금속배선 식각후 처리방법Treatment method after etching metal wiring

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

금속배선 식각후 처리방법에 있어서, 식각챔버(Etching Chamber)에서 염화물을 이용하여 금속배선을 식각한후 고진공상태에서 감광막 제거 챔버로 웨이퍼를 이송하는 제1단계, 상기 제1단계 후에 O2및 CH2OH를 이용하여 감광막을 제거하고 곧바로 웨이퍼를 스핀 가능한 린스 컵(Rinse Cup)으로 이송하는 제2단계, 상기 제2단계 후에 상기 린스 컵에서 TMAH(TetraMethy1 Amonium Hydroxid)를 포함한 현상액 MIFD(Metal Ion Free Developer)로 도포하는 제3단계, 상기 제3단계 후에 상기 금속배선이 형성되어져 있는 웨이퍼를 순수(D.I) 및 스핀(Spin) 세척을 하는 제4단계를 포함하여 이루어지는 것을 특징으로 하는 금속배선 식각후 처리방법.In the post-etching method of metallization, a first step of etching the metallization using chloride in an etching chamber and transferring the wafer to the photoresist removing chamber in a high vacuum state, and after the first step, O 2 and CH A second step of removing the photoresist film using 2 OH and immediately transferring the wafer to a spinable rinse cup, and after the second step, a developer MIFD (Metal Ion Free) containing TMAH (TetraMethy1 Amonium Hydroxid) in the rinse cup. After the third step of coating, and a fourth step of performing pure water (DI) and spin cleaning on the wafer on which the metal wiring is formed after the third step. Treatment method. 제1항에 있어서, 상기 제2단계의 감광막 제거는 O2및 CH2OH를 이용하여 제거하는 것을 특징으로 하는 금속배선 식각후 처리방법.The method of claim 1, wherein the removal of the photoresist layer of the second step is performed using O 2 and CH 2 OH. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920026846A 1992-12-30 1992-12-30 Method of treatment after etching KR950007648B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019920026846A KR950007648B1 (en) 1992-12-30 1992-12-30 Method of treatment after etching
JP5336483A JPH07176514A (en) 1992-12-30 1993-12-28 Formation of metal wiring facilitating removal of polymer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920026846A KR950007648B1 (en) 1992-12-30 1992-12-30 Method of treatment after etching

Publications (2)

Publication Number Publication Date
KR940015708A true KR940015708A (en) 1994-07-21
KR950007648B1 KR950007648B1 (en) 1995-07-13

Family

ID=19347982

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920026846A KR950007648B1 (en) 1992-12-30 1992-12-30 Method of treatment after etching

Country Status (2)

Country Link
JP (1) JPH07176514A (en)
KR (1) KR950007648B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100983584B1 (en) * 2003-11-19 2010-09-27 엘지디스플레이 주식회사 Method for Forming Pattern

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3034259B2 (en) * 1989-03-31 2000-04-17 株式会社東芝 Organic compound film removal method
JPH04263423A (en) * 1991-02-18 1992-09-18 Kokusai Electric Co Ltd Continuous etching treatment method and device thereof
JPH04288823A (en) * 1991-03-13 1992-10-13 Mitsubishi Electric Corp Manufacture of semiconductor device
DE69219998T2 (en) * 1991-10-31 1997-12-18 Sgs Thomson Microelectronics Process for removing polymers from blind holes in semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100983584B1 (en) * 2003-11-19 2010-09-27 엘지디스플레이 주식회사 Method for Forming Pattern

Also Published As

Publication number Publication date
JPH07176514A (en) 1995-07-14
KR950007648B1 (en) 1995-07-13

Similar Documents

Publication Publication Date Title
KR930020582A (en) Via contact formation method in semiconductor device manufacturing process
US5674357A (en) Semiconductor substrate cleaning process
KR970030640A (en) Method of forming device isolation film in semiconductor device
KR940015708A (en) Treatment method after etching metal wiring
JPH0246464A (en) Developing method
KR960035829A (en) Contact hole formation method of semiconductor device
JPH10282637A (en) Method and device to remove foreign matter from reticle
KR970023813A (en) Semiconductor device manufacturing method
KR960039212A (en) Gate oxide film formation method of semiconductor device
KR950007006A (en) Well cleaning process method of semiconductor device
KR100203751B1 (en) Semiconductor fabricating method
KR920013599A (en) Removal method of sidewall film generated by plasma etching process
KR980005501A (en) Via contact hole formation method of semiconductor device
KR970053127A (en) Cleaning Method of Semiconductor Substrate
KR960001911A (en) Method of removing photoresist of semiconductor device
KR930001380A (en) Metal pattern formation method
KR960026399A (en) Tungsten wiring manufacturing method of semiconductor device
KR970023711A (en) Method of forming contact portion of semiconductor device
KR19980029051A (en) Wafer cleaning method
KR970008319A (en) Advice processing method of semiconductor device
KR960039285A (en) Semiconductor device manufacturing method
KR970052662A (en) Impurity Removal Method of Semiconductor Device
KR940016540A (en) Cleaning Method of Semiconductor Devices
KR980005672A (en) Contact hole formation method of semiconductor device
KR970053117A (en) Manufacturing method of semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050621

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee