KR100373307B1 - Method for cleaning semiconductor device - Google Patents

Method for cleaning semiconductor device Download PDF

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Publication number
KR100373307B1
KR100373307B1 KR1019950065697A KR19950065697A KR100373307B1 KR 100373307 B1 KR100373307 B1 KR 100373307B1 KR 1019950065697 A KR1019950065697 A KR 1019950065697A KR 19950065697 A KR19950065697 A KR 19950065697A KR 100373307 B1 KR100373307 B1 KR 100373307B1
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South Korea
Prior art keywords
cleaning
silicon substrate
cleaning process
semiconductor device
hot
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KR1019950065697A
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Korean (ko)
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KR970052695A (en
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이주영
홍병섭
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주식회사 하이닉스반도체
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: A method for cleaning a semiconductor device is provided to be capable of completely removing the residuals existing in a silicon substrate by using fine oxygen bubbles of hot deionized water. CONSTITUTION: The first cleaning process is carried out for cleaning the surface of a silicon substrate(10) by using a mixed solution of H2SO4 and H2O2. Then, the second cleaning process is carried out for removing the residuals existing in the surface of the silicon substrate by using fine oxygen bubbles(22) contained in hot deionized water for 5-7 minutes. Preferably, the first cleaning process can be carried out by using an H3PO4 solution. Preferably, the fine oxygen bubble is formed by heating the deionized water in the range of 70-90 °C. Preferably, the deionized water contains dissolved oxygen of 25-40 ppb.

Description

반도체 소자의 세정방법Method of Cleaning Semiconductor Devices

본 발명은 반도체 소자의 세정방법에 관한 것으로 특히, 반도체 소자의 식각공정 및 제거공정 후 순수를 이용하여 세정하는 반도체 소자의 세정방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a semiconductor device, and more particularly, to a method for cleaning a semiconductor device using pure water after an etching process and a removal process of the semiconductor device.

일반적으로 반도체 소자의 공정진행중 수차례의 식각공정 및 특정층의 제거공정이 실시된 후 이로인한 세정공정이 실시되고 있다. 그러면 종래 순수를 이용한 세정공정을 설명하면 다음과 같다.In general, a cleaning process is performed after several etching processes and a specific layer removal process are performed during the process of semiconductor devices. The following describes the cleaning process using pure water as follows.

수차례의 식각공정 및 특정층 제거공정을 하고난 다음에는 매회 세정공정을실시한 후 마지막으로 순수를 이용한 세정공정을 실시하는데, 상기 세정공정은 QDR(Quick Dump Rinse)로 다음과 같은 순서로 실시한다.After several etching processes and specific layer removal processes, each cleaning process is performed, and finally, a cleaning process using pure water is performed. The cleaning process is performed by QDR (Quick Dump Rinse) as follows. .

핫 사이클(Hot Cycle)은 오버플로우(Overflow) → 배수(Dump drain) + 샤워(Shower) → 샤워(Shower) + 오버플로우 → 오버플로우 + N2기포 → 배수 + 샤워Hot Cycle: Overflow → Dump drain + Shower → Shower + Overflow → Overflow + N 2 bubbles → Drain + Shower

콜드 사이클(Cold Cycle)은 상기 핫 사이클과 동일하게 오버플로우 → 배수 + 샤워 → 샤워 + 오버플로우 → 오버플로우 + N2기포 → 배수 + 샤워로 상기 핫 사이클 및 콜드사이클이 반복하여 실시되며, 이때 소요되는 시간은 10분 이상이고, 상기 공정에 의해 소비되는 순수(DI Water)가 많아질 뿐만 아니라 세정조(Bath)의 구조도 또한 복잡해지는 문제점이 있다.The cold cycle is the same as the hot cycle, the hot cycle and the cold cycle is repeatedly performed as overflow → drain + shower → shower + overflow → overflow + N 2 bubble → drain + shower, which is required The time required is 10 minutes or more, and there is a problem in that not only the DI water consumed by the process increases, but also the structure of the washing bath also becomes complicated.

따라서 본 발명은 실리콘기판의 표면에 잔류하는 불순물을 핫 순수내의 핫 미세 산소기포를 이용하여 제거하므로써 상기한 단점을 해소할 수 있는 반도체 소자의 세정방법을 제공하는 데 그 목적이 있다.Accordingly, an object of the present invention is to provide a method for cleaning a semiconductor device which can solve the above disadvantages by removing impurities remaining on the surface of a silicon substrate by using hot fine oxygen bubbles in hot pure water.

상기한 목적을 달성하기 위한 본 발명은 실리콘기판의 유기물 및 중금속을 제거하기 위해 혼합액을 이용한 제 1차 세정공정으로 상기 실리콘기판의 표면을 세정하는 단계와, 상기 단계로부터 제 2차 세정공정으로 상기 실리콘기판의 표면에 잔류하는 불순물을 제거하는 단계로 이루어지는 것을 특징으로 한다.The present invention for achieving the above object is to clean the surface of the silicon substrate in the first cleaning process using a mixed solution to remove the organic matter and heavy metal of the silicon substrate, and from the step to the second cleaning process And removing impurities remaining on the surface of the silicon substrate.

이하, 본 발명을 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

제 1A 내지 1C 도는 본 발명에 따른 반도체 소자의 세정방법을 설명하기 위한 세정조의 단면도이다.1A to 1C are cross-sectional views of a cleaning tank for explaining a method for cleaning a semiconductor device according to the present invention.

제 1A 도는 실리콘기판(10)의 유기물 및 중금속을 제거하기 위해 H2SO4및 H2O2의 용액을 사용하여 제 1차 세정공정으로 세정하는 제 1세정조(1)의 단면도이다.FIG. 1A is a cross-sectional view of a first cleaning tank 1 which is cleaned by a first cleaning process using a solution of H 2 SO 4 and H 2 O 2 to remove organic substances and heavy metals of the silicon substrate 10.

제 1B 도는 순수를 70 내지 90℃로 높인 핫 순수(Hot DI Water)(24)를 이용하여 5 내지 7분간 오버플로우 방식으로 상기 실리콘기판(10)을 제2차 세정공정으로 세정하는 상태를 도시하는 제 2세정조(2)의 단면도이다. 상기 순수는 용존산소가 25 내지 40ppb 함유된다. 이때 상기 핫 순수(24)의 용존산소는 온도가 높기때문에 부피팽창으로 인하여 반응성을 가진 핫 미세 산소기포(Fine Oxygen Bubble)(22)를 생성하여 상기 실리콘기판(10)의 표면에 잔류하는 황(S), 염소(Cl) 및 미립자와 같은 불순물(21)을 제거한다.FIG. 1B illustrates a state in which the silicon substrate 10 is cleaned by the second cleaning process in an overflow method for 5 to 7 minutes using hot DI water 24 having the pure water increased to 70 to 90 ° C. It is sectional drawing of the 2nd washing tank 2 shown to be. The pure water contains 25 to 40 ppb of dissolved oxygen. In this case, since the dissolved oxygen of the hot pure water 24 has a high temperature, sulfur (HyO2) remaining on the surface of the silicon substrate 10 is generated by generating hot fine oxygen bubbles 22 that are reactive due to volume expansion. S), impurities 21 such as chlorine (Cl) and fine particles are removed.

제 1C 도는 상기 실리콘기판(10)의 표면에 잔류하는 상기 불순물(21)을 상기 핫 미세 산소기포(22)에 의하여 제거한 상태를 도시하는 제 2세정조(2)의 단면도이다.FIG. 1C is a cross-sectional view of the second cleaning tank 2 showing a state in which the impurities 21 remaining on the surface of the silicon substrate 10 are removed by the hot fine oxygen bubbles 22.

본 실시예에서는 H2SO4+ H2O2의 용액을 사용하여 실리콘기판(10)의 유기물 및 중금속을 제거하기 위한 세정공정에 대하여 설명하였으나 이것에 한정되는 것은 아니다. 즉 본 발명은 점도가 큰 H3PO4를 사용하여 실리콘기판(10)의 질화막을 제거하는 데에도 적용할 수 있다.In the present embodiment, the cleaning process for removing organic substances and heavy metals of the silicon substrate 10 using a solution of H 2 SO 4 + H 2 O 2 has been described, but is not limited thereto. That is, the present invention can also be applied to removing the nitride film of the silicon substrate 10 by using H 3 PO 4 having a high viscosity.

하기의 〈표 1〉 및 〈표 2〉는 상술한 본 실시예의 실제 실험결과를 도시한것이다.Table 1 and Table 2 below show the actual experimental results of the present embodiment described above.

〈표 1〉<Table 1>

〈표 2〉<Table 2>

상기 〈표 1〉 및 〈표 2〉에 도시된 바와같이 QDR 사이클 방식보다 핫 오버플로우방식의 세정이 더 좋은 효과를 나타내고 있음을 알수 있다.As shown in Tables 1 and 2, it can be seen that the hot-overflow cleaning has a better effect than the QDR cycle method.

상술한 바와같이 본 발명은 실리콘기판의 표면에 잔류하는 불순물을 핫 순수내의 미세 산소기포를 이용하므로써 빠른시간에 불순물을 완전히 제거할 수 있어서 소자의 수율을 향상시킬 수 있는 탁월한 효과가 있다.As described above, the present invention has an excellent effect of improving the yield of the device by completely removing impurities in a short time by using fine oxygen bubbles in hot pure water for impurities remaining on the surface of the silicon substrate.

제 1A 내지 제 1C 도는 본 발명에 따른 반도체 소자의 세정방법을 설명하기 위한 세정조의 단면도.1A to 1C are cross-sectional views of a cleaning tank for explaining a method for cleaning a semiconductor device according to the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1 : 제 1세정조 2 : 제 2세정조1: 1st cleaning tank 2: 2nd cleaning tank

10 : 실리콘기판 21 : 불순물10 silicon substrate 21 impurity

22 : 핫 미세 산소기포 24 : 핫순수22: hot fine oxygen bubble 24: hot pure water

Claims (5)

H2SO4와 H2O2의 혼합액을 이용한 제 1차 세정공정으로 실리콘 기판의 표면을 세정하는 단계; 및Cleaning the surface of the silicon substrate by a first cleaning process using a mixture of H 2 SO 4 and H 2 O 2 ; And 상기 실리콘 기판을 핫 미세 산소기포를 이용한 제 2차 세정공정으로 상기 실리콘 기판의 표면에 잔류하는 불순물을 제거하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 세정 방법.And removing impurities remaining on the surface of the silicon substrate by a second cleaning process using hot micro oxygen bubbles in the silicon substrate. 제 1 항에 있어서,The method of claim 1, 상기 제 1차 세정 공정은 H3PO4용액을 사용하여 실시되는 것을 특징으로 하는 반도체 소자의 세정방법.The first cleaning process is a method for cleaning a semiconductor device, characterized in that carried out using a H 3 PO 4 solution. 제 1 항에 있어서,The method of claim 1, 상기 핫 미세 산소기포는 순수를 70 내지 90℃로 가열하여 형성하는 것을 특징으로 하는 반도체 소자의 세정방법.The hot micro-oxygen bubbles are formed by heating pure water to 70 to 90 ℃. 제 3 항에 있어서,The method of claim 3, wherein 상기 순수는 25 내지 40ppb의 용존산소를 함유하는 것을 특징으로 하는 반도체 소자의 세정방법.The pure water contains 25 to 40 ppb of dissolved oxygen. 제 1 항에 있어서,The method of claim 1, 상기 제 2차 세정공정은 5 내지 7분간 실시하는 것을 특징으로 하는 반도체 소자의 세정방법.And the second cleaning step is performed for 5 to 7 minutes.
KR1019950065697A 1995-12-29 1995-12-29 Method for cleaning semiconductor device KR100373307B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101552765B1 (en) 2012-08-09 2015-09-11 시바우라 메카트로닉스 가부시끼가이샤 Cleaning solution producing apparatus, and substrate cleaning apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138031A (en) * 1982-02-12 1983-08-16 Marine Instr Co Ltd Washing method for si wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138031A (en) * 1982-02-12 1983-08-16 Marine Instr Co Ltd Washing method for si wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101552765B1 (en) 2012-08-09 2015-09-11 시바우라 메카트로닉스 가부시끼가이샤 Cleaning solution producing apparatus, and substrate cleaning apparatus

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