JPS5866334A - Treating device of semiconductor substrate - Google Patents

Abstract

PURPOSE:To perform clean washing effectively, by a method wherein a pair of electrodes are installed within a washing tank for semiconductor substrate and DC voltage is supplied thereto. CONSTITUTION:Teflon jig 13 containing substrates 12a... is installed within a water washing tank 11, and DC voltage is supplied to the semicondutor substrates or to a pair of electrodes 16, 17 of high purity Pt. In this constitution, impurity ions are forcedly separated from the substrate by the water washing and electric attraction and adhered to the electrodes 16, 17 thereby pure water 15 is not contaminated and the water washing is performed effectively.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor substrate processing apparatus for cleaning a semiconductor substrate, particularly for removing impurity ions.

Semiconductor devices are formed through various heat treatment processes.
Generally, the semiconductor substrate is cleaned before this heat treatment step. The general method for this cleaning is to first remove dust from the surface of the semiconductor substrate using a degreased surface or a scriber method using a brush or cloth, and then remove the dust using a processing solution containing organic chemicals or ammonia. Degrease with. This degreased substrate is then ionized and removed by acidic chemicals to remove the heavy metal impurities adsorbed on the substrate surface, and the stain film is also removed at the same time, and then washed with pure or ultrapure water. conduct.

However, when the above chemical treatment is performed, impurity ions dissolved in the organic and inorganic chemicals adhere to the semiconductor substrate.-9. A fugrate is happening. If the next heat treatment step is performed before the contaminants in the impurity ions are sufficiently removed, the characteristics and yield of the semiconductor device will be seriously affected. Therefore, by the water washing process, residual chemicals adhering to the semiconductor substrate and contaminants such as impurity ions adhering as a gas plate are washed away.

Conventional common washing methods include a one-way shower system, one-way overflow system, and a method in which water is filled to the brim with water like in a washing machine and then drained from the bottom. There is.

By measuring the resistivity of the water used for washing using the method described above, measures can be taken to avoid pack rates such as chemical addition of impurity ions attached to semiconductor substrates and Teflon oil tools. However, it has been confirmed that it is not possible to completely avoid tsuku tsuku great.

The above points for expanding this invention are fI! The aim is to provide a processing device that reliably collects impurity ions in the processing solution and pure water during the cleaning process.

That is, in this invention, a first pair of electrodes is set in a washing tank or a processing tank, and a voltage is directly applied between the two electrodes to collect impurity ions, etc. in the processing liquid.

An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows the configuration of the washing treatment apparatus, in which a plurality of semiconductor substrates t2, 12b, . . . are placed in a washing tank 11.
A Teflon jig 13 containing a water tank is installed, and pure water 15 is constantly supplied through the water supply port 14 at the bottom of the washing tank 11, and the pure water 15 overflows from the top of the washing tank to the outside. It is set. Inside this washing tank 11, there is a jig 13.
For example, a dummy semiconductor substrate,
Alternatively, a pair of electrodes 16.1"l made of high-purity platinum is installed, and the distance between the electrodes 16° and 11 km is 5 to 5 km from the power source 18.
A voltage of 300V is applied to create an electric field between the electrodes 16,17.

By the way, the impurity ions that are physically or chemically attached to the semiconductor substrates 12m+12b+ are not only washed out into the water by washing with pure water, but also absorbed into the water by the electric attraction force. put out. The impurity ions dissolved in the water are attracted to the electrode by the electric field and attached to the electrode 16.1'/. That is, the nine impurity ions attached to the surface of the semiconductor substrate 12 m + 12 b *... are forcibly removed. Therefore, in order to perform water washing while preventing the pure water 1s in the water washing treatment tank 11 from being contaminated by impurity ions washed out from the semiconductor substrates JjatJjbt...
Efficient and clean water washing becomes possible.

Although the description has been made using a one-way type washing tank of O-F-70, the present invention can be similarly implemented in a washing machine, for example, in which the washing tank is filled with water and the water is drained from the bottom.

FIG. 2 shows another embodiment, in which treatment 1 with acid-based chemicals is performed. That is, as in the previous embodiment, the semiconductor substrates 11m*12b*...
A Teflon oil containing jLfJ is installed in the treatment tank 19, and the treatment tank 19 contains a treatment t made of acid-based chemicals.
rtzo is satisfied. First, a heater 21 is installed at the bottom of the processing tank 19 in order to improve processing efficiency. Then, in the processing tank 19, an electrode 16 made of, for example, a dummy semiconductor substrate or high-purity platinum is placed. A voltage is applied to this electrode 16.11 from a DC power supply 18. The effect of the electric field generated between the electrodes 16 and 11 on impurities in the substrate or impurity ions in the processing liquid 20 is similar to that in the water washing process described above.

That is, impurity ions contained in the processing liquid 20 and the semiconductor substrate 12 & due to the processing liquid 20.

The impurity ions dissolved from the semiconductor substrates 12b, 12b, . Furthermore, not only is the pack rate of the treatment liquid 20 prevented, but also the impurity ions in the treatment liquid 20 are removed, making it possible to use the treatment liquid 20 multiple times.

Such a processing device of the present invention is an IC.

It can be applied to the water washing process and liquid chemical treatment of all semiconductor substrates for LSI devices. And, for example,
-The yield rate for L-type ICs is 51G compared to conventional products! It has been confirmed that it improves to 9 degrees.

As described above, according to the present invention, in the water washing process or the chemical treatment during the cleaning process in the manufacture of semiconductor devices,
It is possible to construct a processing apparatus for a semiconductor substrate that can prevent impurity ions from irradiating the semiconductor substrate and perform cleaner and more effective cleaning.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional configuration diagram illustrating a water washing treatment apparatus according to one embodiment of the present invention, and FIG. 2 is a diagram illustrating another embodiment of the present invention. 11... Washing tank, 12*e12b*... Semiconductor substrate, 16, 17/... Electrode, 18... DC power supply, 19
...processing tank. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2

Claims (1)

[Claims] A semiconductor substrate processing apparatus that is characterized by having a pair of electrodes connected to a DC power source installed in a tank containing a cleaning solution and in which a semiconductor substrate to be cleaned is placed.