JPS5866334A - Treating device of semiconductor substrate - Google Patents
Treating device of semiconductor substrateInfo
- Publication number
- JPS5866334A JPS5866334A JP16501781A JP16501781A JPS5866334A JP S5866334 A JPS5866334 A JP S5866334A JP 16501781 A JP16501781 A JP 16501781A JP 16501781 A JP16501781 A JP 16501781A JP S5866334 A JPS5866334 A JP S5866334A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- water
- washing
- impurity ions
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、半導体基板の洗浄の際の、特に、不純物イ
オンの除去に係わる、半導体基板の処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor substrate processing apparatus for cleaning a semiconductor substrate, particularly for removing impurity ions.
半導体装置は、各種の熱処理工程を経て形成されるが、
一般にこの熱処理工程の前には、半導体基板の洗浄を行
なう。この洗浄の一般的な方法は、まず半導体基板の表
面を脱脂面によるンービングや、はけまた位布などを用
いたスクライバ一方式によって、ダストを除去したのち
有機薬品やアンモニアなどを含んだ処理液で脱脂処理す
る。この脱脂処理された基板は、さらに酸類の薬品によ
って基板表面は吸着している重金属不純物をイオン化し
て除去し、またスティン膜も同時に除去し、次に純水や
超純水での水洗処理を行う。Semiconductor devices are formed through various heat treatment processes.
Generally, the semiconductor substrate is cleaned before this heat treatment step. The general method for this cleaning is to first remove dust from the surface of the semiconductor substrate using a degreased surface or a scriber method using a brush or cloth, and then remove the dust using a processing solution containing organic chemicals or ammonia. Degrease with. This degreased substrate is then ionized and removed by acidic chemicals to remove the heavy metal impurities adsorbed on the substrate surface, and the stain film is also removed at the same time, and then washed with pure or ultrapure water. conduct.
しかし、上記のような薬品による処理を行なうと、有機
薬品中無機薬品中に溶は込んでいる不純物イオンが、半
導体基板に耐着する−９．フグレートが起きている。こ
こで不純物イオン中汚れが十分に除去されないまま、次
の熱処理工程を行うと、半導体装置の特性や歩留りに大
′をな悪影響を与える。従りて水洗処理によって、半導
体基板に耐着している残留薬品と・ぐツクプレートとし
て耐着した不純物イオン等の汚染物質を洗い流す。However, when the above chemical treatment is performed, impurity ions dissolved in the organic and inorganic chemicals adhere to the semiconductor substrate.-9. A fugrate is happening. If the next heat treatment step is performed before the contaminants in the impurity ions are sufficiently removed, the characteristics and yield of the semiconductor device will be seriously affected. Therefore, by the water washing process, residual chemicals adhering to the semiconductor substrate and contaminants such as impurity ions adhering as a gas plate are washed away.
従来から行なわれている一般的な水洗処理法は、シャワ
一方式やオーバーフロ一方式、または洗濯機のように水
を水洗槽に満杯にしては下から水を抜くことを〈シ返す
方式などがある。Conventional common washing methods include a one-way shower system, one-way overflow system, and a method in which water is filled to the brim with water like in a washing machine and then drained from the bottom. There is.
上記のような方法によりて水洗処理に使ゎれた水の比抵
抗を測ることにより、半導体基板やテフロン製油具に附
着している不純物イオンのの薬品添加等のパックグレー
トを避けるための対策が施されてはいるが、完全にはツ
クツクグレートを避けることができないことが確認され
ている。By measuring the resistivity of the water used for washing using the method described above, measures can be taken to avoid pack rates such as chemical addition of impurity ions attached to semiconductor substrates and Teflon oil tools. However, it has been confirmed that it is not possible to completely avoid tsuku tsuku great.
この発明拡上記の点をｆＩ！ｉみてなされたもので、洗
浄処理工程において、その処理液および純水中の不純物
イオンを確実に捕集するようにして、処理装置を提供し
ようとする亀のである。The above points for expanding this invention are fI! The aim is to provide a processing device that reliably collects impurity ions in the processing solution and pure water during the cleaning process.
すなわちこの発明は、水洗槽もしくは処理槽中に１対め
電極を設定し、この両電極間に直接電圧を印加しソ、処
理液中の不純物イオン等を捕集させるようにするもので
ある。That is, in this invention, a first pair of electrodes is set in a washing tank or a processing tank, and a voltage is directly applied between the two electrodes to collect impurity ions, etc. in the processing liquid.
以下図面を参照してこの発明の一実施例を説明する。第
１図は、その水洗処理装置の構成を示すもので、水洗槽
１１の中に、複数の半導体゛基板ｔ２亀、１２ｂ・・・
が収められたテフロン製治具１３が設置されており、こ
の水洗槽１１の下部の給水口１４よシ純水１５が常時供
給され、水洗槽の上部から純水１５が外へ溢れ出るよう
に設定されている。この水洗槽１１の中には、治具１３
をはさむようにして例えば、ダミーの半導体基板製の、
あるいは高純度の白金による１対の電極１６．１”ｌを
設置し、この電極１６゜１１間Ｋｍ流電源１８から５〜
３００Ｖの電圧を印加し、この電極１６．１７間に電界
が生じるようにする。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows the configuration of the washing treatment apparatus, in which a plurality of semiconductor substrates t2, 12b, . . . are placed in a washing tank 11.
A Teflon jig 13 containing a water tank is installed, and pure water 15 is constantly supplied through the water supply port 14 at the bottom of the washing tank 11, and the pure water 15 overflows from the top of the washing tank to the outside. It is set. Inside this washing tank 11, there is a jig 13.
For example, a dummy semiconductor substrate,
Alternatively, a pair of electrodes 16.1"l made of high-purity platinum is installed, and the distance between the electrodes 16° and 11 km is 5 to 5 km from the power source 18.
A voltage of 300V is applied to create an electric field between the electrodes 16,17.
とこで、半導体基板１２ｍ＋１２ｂ＋・・・に物理的あ
るいは化学的に附着している不純物イオンは、単に純水
の水洗によって水中に洗い出されるだけでなく、電気的
な吸引力を受けて水中Ｋｌけ出す。そして、この水中に
溶は出した不純物イオンは、電界にようて、電極に引き
寄せられ、電極１６．１’／に附着する。すなわち、半
導体基板１２ ｍ ＋ １２ ｂ ＊・・・の表面に附
着され九不純物イオンは、強制的に剥離される状態とな
る。従って、水洗処理槽１１内の純水１ｓが半導体基板
ＪｊａｔＪｊｂｔ・・・から洗い出された不純物イオン
によりて汚染されること、を、防ぎつつ水洗するため、
効率のよい清浄な水洗が可能になる。By the way, the impurity ions that are physically or chemically attached to the semiconductor substrates 12m+12b+ are not only washed out into the water by washing with pure water, but also absorbed into the water by the electric attraction force. put out. The impurity ions dissolved in the water are attracted to the electrode by the electric field and attached to the electrode 16.1'/. That is, the nine impurity ions attached to the surface of the semiconductor substrate 12 m + 12 b *... are forcibly removed. Therefore, in order to perform water washing while preventing the pure water 1s in the water washing treatment tank 11 from being contaminated by impurity ions washed out from the semiconductor substrates JjatJjbt...
Efficient and clean water washing becomes possible.
なお、ここではオー、−ｆ−７０一方式の水洗槽にて説
明したが、例えば洗濯機のように水を水洗槽に満たして
下から水を抜く方式などでも、同様に実施できる。Although the description has been made using a one-way type washing tank of O-F-70, the present invention can be similarly implemented in a washing machine, for example, in which the washing tank is filled with water and the water is drained from the bottom.
第２図は、他の実施例を示すもので、この実施例は酸系
の薬品による処１を行なり場合な示している。すなわち
、前実施例と同様に半導体基板１１ｍ＊１２ｂ＊・・・
を収めたテフロン製油、ｊＬｆＪを処理槽１９中に設置
し、その処理槽１９の中には酸系の薬品から成る処理ｔ
ｒｔｚｏが満たされている。まえ、処理の効率を高める
ため、処理槽１９の底部にヒーター２１が備えうけられ
ている。そして、処理槽１９中に、例えばダミーの半導
体基板あるいは高純度の白金製の電極１６．Ｉ’ｌを設
置し、この電極１６．１１に直流電源１８から電圧を印
加する。この電極１６．１１の間に生じた電界が基板中
の不純物や、あるいは処理液２０中の不純物イオンに与
える効果は、前記の水洗処理の場合と同様である。FIG. 2 shows another embodiment, in which treatment 1 with acid-based chemicals is performed. That is, as in the previous embodiment, the semiconductor substrates 11m*12b*...
A Teflon oil containing jLfJ is installed in the treatment tank 19, and the treatment tank 19 contains a treatment t made of acid-based chemicals.
rtzo is satisfied. First, a heater 21 is installed at the bottom of the processing tank 19 in order to improve processing efficiency. Then, in the processing tank 19, an electrode 16 made of, for example, a dummy semiconductor substrate or high-purity platinum is placed. A voltage is applied to this electrode 16.11 from a DC power supply 18. The effect of the electric field generated between the electrodes 16 and 11 on impurities in the substrate or impurity ions in the processing liquid 20 is similar to that in the water washing process described above.
すなわち、処理液２０中に含まれていた不純物イオンや
、処理液２０により半導体基板１２＆。That is, impurity ions contained in the processing liquid 20 and the semiconductor substrate 12 & due to the processing liquid 20.
１２ｂ、・・・から溶は出した不純物イオンは、電界に
よ）電極１６．１７に引き寄せられ、電極に吸着するた
め、半導体基板１２＆１１２ｂ＊・・・を汚染するパッ
クグレートが防止される。さらに、とのパックグレート
が防止されるだけでなく、処理液２０中の不純物イオン
が除去されるため、処理液２０の多回使用が可能になる
。The impurity ions dissolved from the semiconductor substrates 12b, 12b, . Furthermore, not only is the pack rate of the treatment liquid 20 prevented, but also the impurity ions in the treatment liquid 20 are removed, making it possible to use the treatment liquid 20 multiple times.
このようなこの発明の処理装置は、ＩＣ。Such a processing device of the present invention is an IC.
ＬＳＩ勢、すべての半導体基板の水洗処理工程および液
体薬品処理１穏に適用できる。そして、例えば・々イＩ
−ラ型ＩＣでは、従来に比較して歩留）が５１Ｇ！度ま
で向上することが確認され九。It can be applied to the water washing process and liquid chemical treatment of all semiconductor substrates for LSI devices. And, for example,
-The yield rate for L-type ICs is 51G compared to conventional products! It has been confirmed that it improves to 9 degrees.
以上のようにこの発明によれば、半導体装置の製作にお
ける洗浄工程中の水洗処理や薬品による処理において、
不純物イオンの半導体基板への・ヤツクグレートを防止
し、より清浄で効果的な洗浄を行なうことのできる半導
体基板の処理装置を構成することができる。As described above, according to the present invention, in the water washing process or the chemical treatment during the cleaning process in the manufacture of semiconductor devices,
It is possible to construct a processing apparatus for a semiconductor substrate that can prevent impurity ions from irradiating the semiconductor substrate and perform cleaner and more effective cleaning.
第１図はこの発明の一実施例に係る水洗処理装置を説明
する断面構成図、第２図はこの発明の他の実施例を説明
する図である。
１１・・・水洗槽、１２＊ｅ１２ｂ＊・・・半導体基板
、１６，１７／・・・電極、１８・・・直流電源、１９
・・・処理槽。
出願人代理人 弁理士 鈴 江 武 彦第１図
第２図FIG. 1 is a cross-sectional configuration diagram illustrating a water washing treatment apparatus according to one embodiment of the present invention, and FIG. 2 is a diagram illustrating another embodiment of the present invention. 11... Washing tank, 12*e12b*... Semiconductor substrate, 16, 17/... Electrode, 18... DC power supply, 19
...processing tank. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2
Claims (1)
を設置する槽内に、直流電源の接続される１対の電極を
設置したことを％徴とする半導体基板の処理装置。A semiconductor substrate processing apparatus that is characterized by having a pair of electrodes connected to a DC power source installed in a tank containing a cleaning solution and in which a semiconductor substrate to be cleaned is placed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16501781A JPS5866334A (en) | 1981-10-16 | 1981-10-16 | Treating device of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16501781A JPS5866334A (en) | 1981-10-16 | 1981-10-16 | Treating device of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5866334A true JPS5866334A (en) | 1983-04-20 |
Family
ID=15804252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16501781A Pending JPS5866334A (en) | 1981-10-16 | 1981-10-16 | Treating device of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5866334A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01255226A (en) * | 1988-04-04 | 1989-10-12 | Matsushita Electric Ind Co Ltd | Substrate cleaning apparatus |
| JPH02303027A (en) * | 1989-05-17 | 1990-12-17 | Mitsubishi Electric Corp | Cleaning device |
| EP0740329A1 (en) * | 1995-04-28 | 1996-10-30 | Shin-Etsu Handotai Company Limited | Apparatus and method for cleaning semiconductor wafers |
| EP0883162A2 (en) * | 1997-06-05 | 1998-12-09 | Sizary Limited | Semiconductor wafer cleaning apparatus |
-
1981
- 1981-10-16 JP JP16501781A patent/JPS5866334A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01255226A (en) * | 1988-04-04 | 1989-10-12 | Matsushita Electric Ind Co Ltd | Substrate cleaning apparatus |
| JPH02303027A (en) * | 1989-05-17 | 1990-12-17 | Mitsubishi Electric Corp | Cleaning device |
| EP0740329A1 (en) * | 1995-04-28 | 1996-10-30 | Shin-Etsu Handotai Company Limited | Apparatus and method for cleaning semiconductor wafers |
| EP0883162A2 (en) * | 1997-06-05 | 1998-12-09 | Sizary Limited | Semiconductor wafer cleaning apparatus |
| EP0883162A3 (en) * | 1997-06-05 | 2001-04-18 | Sizary Limited | Semiconductor wafer cleaning apparatus |
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