KR960012576A - Manufacturing Method of Thin Film Semiconductor Device - Google Patents

Manufacturing Method of Thin Film Semiconductor Device Download PDF

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KR960012576A
KR960012576A KR1019950030393A KR19950030393A KR960012576A KR 960012576 A KR960012576 A KR 960012576A KR 1019950030393 A KR1019950030393 A KR 1019950030393A KR 19950030393 A KR19950030393 A KR 19950030393A KR 960012576 A KR960012576 A KR 960012576A
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silicon
etching
thin film
semiconductor device
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히데오미 스자와
야스히코 다케무라
슌페이 야마자키
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야마자끼 슌페이
한도타이 에네루기 겐큐쇼 가부시키가이샤
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    • H01L27/1259—Multistep manufacturing methods
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    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure

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Abstract

본 발명은 소스와 드레인간의 누설 전류를 감소시키도록 고안한 박막 반도체에 관한 것이다. 실리콘 필름을 습식 에칭 기술에 의해 에칭시켜 데이퍼링된 엣지를 지니는 섬-유사 실리콘 반도체 영역을 수득한다. 대안적으로는, 데이퍼링된 엣지부분을 지는 섬-유사 반도체 영역은 드라이 에칭 기술을 형성시키고 엣지 부분을 수소 또는 아질산 불소산과 같은 에칭제에 의해 에칭시킨다. 그 결과, 섬-유사 반도체 영역에서, 드라이 에칭 시키면서 플라즈마에 의해 손상된 부분을 제거시킬 수 있다. 따라서, 이 부분에 의해 유발되는, 소스와 드레인 사이의 누설 전류가 감소되게 된다. 또한, 전술한 어느 경우에서나, 게이트 전극을 섬-유사 실리콘 영역을 가로지를 때와 같은 단절등의 단점이 제거될 수 있다.The present invention relates to thin film semiconductors designed to reduce leakage current between source and drain. The silicon film is etched by a wet etching technique to obtain island-like silicon semiconductor regions with tapered edges. Alternatively, island-like semiconductor regions with tapered edge portions form a dry etching technique and the edge portions are etched with an etchant, such as hydrogen or nitrite hydrofluoric acid. As a result, in the island-like semiconductor region, the portion damaged by the plasma can be removed while dry etching. Thus, the leakage current between the source and the drain caused by this portion is reduced. In addition, in any of the above cases, disadvantages such as disconnection such as when the gate electrode crosses the island-like silicon region can be eliminated.

Description

박막 반도체 장치의 제조 방법Manufacturing Method of Thin Film Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A내지 제1H도는 본 발명의 한 양태에 따라 박막 트랜지스터(TFT)를 제조하는 방법을 나타내는 모식도.1A to 1H are schematic diagrams showing a method of manufacturing a thin film transistor (TFT) according to one aspect of the present invention.

제2A 내지 제2D도는 본 발명의 다른 양태에 따라 TFT를 제조하는 방법을 나타내는 모식도.2A to 2D are schematic views showing a method of manufacturing a TFT according to another aspect of the present invention.

Claims (50)

실리콘을 에칭시키는 작용을 가지는 비-플라즈마 프로세스를 통해 테이퍼링된 엣지를 갖는 섬-유사 실리콘 반도체 영역을 형성시킴을 포함하는 박막 반도체 장치 제조방법.Forming a island-like silicon semiconductor region with tapered edges through a non-plasma process having the action of etching silicon. 제1항에 있어서, 비-플라즈마 프로세스로서 히드라진을 함유하는 용액을 사용하는 습식 에칭법이 사용되는 박막 반도체 장치 제조방법.The method of manufacturing a thin film semiconductor device according to claim 1, wherein a wet etching method using a solution containing hydrazine as a non-plasma process is used. 제1항에 있어서, 비-플라즈마 프로세스로서 불소산을 함유하는 용액을 사용하는 습식 에칭법이 사용되는 박막 반도체 장치 제조방법.The method of manufacturing a thin film semiconductor device according to claim 1, wherein a wet etching method using a solution containing fluoric acid as a non-plasma process is used. 제1항에 있어서, 비-플라즈마 프로세스로서 에틸렌 디아민을 함유하는 용액을 사용하는 습식 에칭법이 사용되는 박막 반도체 장치 제조방법.The method of manufacturing a thin film semiconductor device according to claim 1, wherein a wet etching method using a solution containing ethylene diamine as a non-plasma process is used. 제1항에 있어서, 비-플라즈마 프로세싱에서 불소와 염소의 화합물이며 비-이온화 상태인 가스를 사용하는 가스 에칭이 사용되는 박막 반도체 장치 제조방법.The method of manufacturing a thin film semiconductor device according to claim 1, wherein a gas etching using a compound of fluorine and chlorine in a non-plasma processing and using a gas in a non-ionized state is used. (a)실리콘 필름을 플라즈마를 써서 에칭시켜 섬형태를 갖는 실리콘 반도체 영역을 형성시키는 단계 및 (b)비-플라즈마 프로세싱에 의해, 상기 실리콘 반도체 영역내에서, 상기 플라즈마에 의해 손상된 영역을 에칭에 의해 제거시키는 단계를 포함시키는 박막 반도체 장치 제조방법.(a) etching the silicon film using a plasma to form a silicon semiconductor region having an island shape; and (b) non-plasma processing, within the silicon semiconductor region, by etching the region damaged by the plasma. A thin film semiconductor device manufacturing method comprising the step of removing. 제6항에 있어서, 비-플라즈마 프로세스로서 히드라진을 함유하는 용액을 사용하는 습식 에칭법이 사용되는 박막 반도체 장치 제조방법.7. The method of manufacturing a thin film semiconductor device according to claim 6, wherein a wet etching method using a solution containing hydrazine as a non-plasma process is used. 제6항에 있어서, 비-플라즈마 프로세스로서 불소산을 함유하는 용액을 사용하는 습식 에칭법이 사용되는 박막 반도체 장치 제조방법.The method of manufacturing a thin film semiconductor device according to claim 6, wherein a wet etching method using a solution containing fluoric acid as a non-plasma process is used. 제6항에 있어서, 비-플라즈마 프로세스로서 에틸렌 디아민을 함유하는 용액을 사용하는 습식 에칭법이 사용되는 박막 반도체 장치 제조방법.7. The method of claim 6, wherein a wet etching method using a solution containing ethylene diamine as a non-plasma process is used. 제6항에 있어서, 비-플라즈마 프로세싱에서 불소와 염소의 화합물이며 비-이온화 상태인 가스를 사용하는 가스 에칭이 사용되는 박막 반도체 장치 제조방법.7. The method of manufacturing a thin film semiconductor device according to claim 6, wherein gas etching using a compound of fluorine and chlorine in a non-plasma processing and using a gas in a non-ionized state is used. (a)절연 코팅상에 형성시킨, 100내지 1000Å의 두께를 가지는 실리콘 필름상에 마스크 필름을 형성시키는 단계 및 (b) 둘다 실리콘을 에칭시키는 작용을 가지는, 비-이온화 상태인 액체 또는 가스에 의해 상기마스크 필름을 사용하여 상기 실리콘 필름을 에칭시키는 단계를 포함하는 박막 반도체 장치 제조방법.(a) forming a mask film on a silicon film having a thickness of 100 to 1000 microns, formed on an insulating coating, and (b) both by a non-ionized liquid or gas having the action of etching silicon. Etching the silicon film using the mask film. 제11항에 있어서, 단계(a)중의 마스크 필름이 주로 산화실리콘 또는 아질산 실리콘을 함유하는 박막 반도체 장치 제조방법.12. The method of manufacturing a thin film semiconductor device according to claim 11, wherein the mask film in step (a) mainly contains silicon oxide or silicon nitrite. 제11항에 있어서, 상기 단계(b)중의 실리콘 필름을 에칭시키는 작용을 가지는 액체가 히드라진을 포함하는 용액인 박막 반도체 장치 제조방법.The method of manufacturing a thin film semiconductor device according to claim 11, wherein the liquid having the action of etching the silicon film in step (b) is a solution containing hydrazine. 제11항에 있어서, 상기 단계(b)중의 실리콘 필름을 에칭시키는 작용을 가지는 액체가 불소산과 아질산의 혼합 용액인 박막 반도체 장치 제조방법.The method for manufacturing a thin film semiconductor device according to claim 11, wherein the liquid having the action of etching the silicon film in step (b) is a mixed solution of fluoric acid and nitrous acid. 제11항에 있어서, 실리콘 필름이 단계(a)에서 형성된 절연 코팅물이 주로 산화실리콘 또는 아질산실리콘을 함유하는 박막 반도체 장치 제조방법.The method of manufacturing a thin film semiconductor device according to claim 11, wherein the insulating coating in which the silicon film is formed in step (a) mainly contains silicon oxide or silicon nitrite. 제11항에 있어서, 비-이온화 상태이며 상기 단계(b)중에 실리콘 필름을 에칭시키는 작용을 가지는 가스가 불소 및 염소의 화합물인 박막 반도체 장치 제조방법.The method of manufacturing a thin film semiconductor device according to claim 11, wherein the gas which is non-ionized and has a function of etching the silicon film during the step (b) is a compound of fluorine and chlorine. (a)절연 코팅물상에 형성된 실리콘을 드라이 에칭 기술을 통해 에칭시켜 마스크 필림이 형성된 데이퍼링된 엣지를 지는 섬-유사 박막 실리콘 반도체를 형성시키는 단계; (b) 둘다 실리콘 필름을 에칭시키는 작용을 갖는, 비-이온화 상태인 액체 또는 가스에 의해 상기 박막 실리콘 반도체의 엣지 부분을 프로세싱하는 단계 및(c) 상기 박막 반도체 영역을 가로지르는 게이트 전극을 형성시키는 단계들을 포함하는, 박막 반도체 장치 제조방법.(a) etching the silicon formed on the insulating coating through a dry etching technique to form a island-like thin film silicon semiconductor having a masked film formed edged edge; (b) processing an edge portion of the thin film silicon semiconductor with a non-ionized liquid or gas, both of which have an action of etching the silicon film; and (c) forming a gate electrode across the thin film semiconductor region. Comprising the steps of: manufacturing a thin film semiconductor device. 제17항에 있어서, 상기 단계(a)의 상기 마스크 필름이 산화실리콘 또는 아질산실리콘을 함유하는 박막 반도체 장치 제조방법.18. The method of manufacturing a thin film semiconductor device according to claim 17, wherein said mask film of said step (a) contains silicon oxide or silicon nitrite. 제17항에 있어서, 상기 단계(b)중의 실리콘 필름을 에칭시키는 작용을 갖는 액체가 히드라진을 포함하는 용액인 박막 반도체 장치 제조방법.18. The method of manufacturing a thin film semiconductor device according to claim 17, wherein the liquid having an action of etching the silicon film in step (b) is a solution containing hydrazine. 제17항에 있어서, 상기 단계(b)중의 실리콘 필름에 에칭시키는 작용을 갖는 액체가 불소산 및 아질산의 혼합된 용액인 박막 반도체 장치 제조방법.The method of manufacturing a thin film semiconductor device according to claim 17, wherein the liquid having an action of etching on the silicon film in step (b) is a mixed solution of fluoric acid and nitrous acid. 제17항에 있어서, 단계(a)에서 실리콘 필름이 형성된 절연 코팅물이 주로 산화실리콘 또는 아질산실리콘을 함유하는 박막 반도체 장치 제조방법.18. The method of claim 17, wherein the insulating coating on which the silicon film is formed in step (a) mainly contains silicon oxide or silicon nitrite. 제17항에 있어서, 비-이온화 상태이며 상기 단계(b)에서 실리콘 필름을 에칭시키는 작용을 가지는 가스가 불소와 염소의 화합물인 박막 반도체 장치 제조방법.18. The method of manufacturing a thin film semiconductor device according to claim 17, wherein the gas which is non-ionized and has a function of etching the silicon film in the step (b) is a compound of fluorine and chlorine. 제17항에 있어서, 상기 단계(a)에서 수득한 실리콘 필름이, 1×1017원자/㎤ 또는 그 이상에서, 무정형 실리콘의 결정화를 촉진시키는 촉매 원자를 함유하는 박막 반도체 장치 제조방법.18. The method of manufacturing a thin film semiconductor device according to claim 17, wherein the silicon film obtained in step (a) contains a catalyst atom that promotes crystallization of amorphous silicon at 1 × 10 17 atoms / cm 3 or more. 제17항에 있어서, 상기 단계(a)및 (b)사이에 400내지 550℃에서 열에 의해 어넬링 시키는 단계를 추가로 포함하는 박막 반도체 장치 제조방법.18. The method of claim 17, further comprising annealing by heat at 400 to 550 DEG C between steps (a) and (b). (a)절연 코팅물상에 형성시킨, 두께 100내지 1000Å을 가지는 실리콘 필름상에 마스크 필름을 형성시키는 단계 및 (b)상기 마스크를 사용하여, NH2그룹을 지니는 액체를 사용하여 실리콘 필름을 에칭시켜, 데이퍼링된 엣지를 지니는 박막 실리콘 반도체를 형성시키는 단계를 포함하는, 박막 반도체 장지 제조방법.(a) forming a mask film on a silicon film having a thickness of 100 to 1000 GPa formed on an insulating coating; and (b) etching the silicon film using a liquid having NH 2 groups using the mask. And forming a thin film silicon semiconductor having a tapered edge. 제25항에 있어서, 상기 단계(a)에서의 상기 마스크 필름이 실질적으로 광-레지스트인 박막 반도체 장치 제조방법.A method according to claim 25, wherein the mask film in step (a) is substantially photo-resist. 제25항에 있어서, 상기 단계(b)에서 NH2그룹을 지니는 액체가 히드라진을 포함하는 용액인 박막 반도체 장치 제조방법.The method of claim 25, wherein the liquid having NH 2 groups in step (b) is a solution containing hydrazine. 제25항에 있어서, 상기 단계(b)에서 NH2그룹을 지니는 액체가 에틸렌 디아민을 포함하는 용액인 박막 반도체 장치 제조방법.The method of claim 25, wherein the liquid having NH 2 groups in step (b) is a solution comprising ethylene diamine. 제25항에 있어서, 실리콘 필름하에 형성된 절연 코팅물이 주로 산화실리콘 또는 아직산실리콘을 함유하는 박막 반도체 장치 제조방법.27. The method of claim 25, wherein the insulating coating formed under the silicon film mainly contains silicon oxide or silicon oxide yet. (a)절연 코팅물상에 형성된 실리콘 필름을 드라이 에칭 기술을 통해 에칭시켜, 마스크 필름이 형성된 테이퍼링된 엣지를 지니는 섬-유사 박막 실리콘 반도체 영역을 형성시키는 단계; (b)NH2그룹을 지니는 액체를 사용하여 상기 박막 실리콘 반도체 영역의 엣지 부분을 프로세싱시키는 단계 및 (c)상기 박막 반도체 영역을 가로지르는 게이트 전극을 형성시키는 단계들을 포함하는 박막 반도체 장치 제조방법.(a) etching the silicon film formed on the insulating coating through a dry etching technique to form an island-like thin film silicon semiconductor region having a tapered edge having a mask film formed thereon; (b) processing an edge portion of the thin film silicon semiconductor region using a liquid having an NH 2 group, and (c) forming a gate electrode across the thin film semiconductor region. 제30항에 있어서, 상기 단계(a)에서의 상기 마스크 필름이 실질적으로 광-레지스트인 박막 반도체 장치 제조방법.31. The method of claim 30 wherein the mask film in step (a) is substantially photo-resist. 제30항에 있어서, 상기 단계(b)에서 NH2그룹을 지니는 액체가 히드라진을 포함하는 용액인 박막 반도체장치 제조방법.31. The method of claim 30, wherein the liquid having NH 2 group in step (b) is a solution containing hydrazine. 제30항에 있어서, 상기 단계(b)에서 NH2그룹을 지니는 액체가 에틸렌 디아민을 포함하는 용액인 박막 반도체장치 제조방법.The method of claim 30, wherein the liquid having NH 2 groups in step (b) is a solution containing ethylene diamine. 제30항에 있어서, 실리콘 필름하에 형성된 절연 코팅물이 주로 산화실리콘 또는 아질산실리콘을 함유하는 박막 반도체 장치 제조방법.31. The method of claim 30, wherein the insulating coating formed under the silicon film contains predominantly silicon oxide or silicon nitrite. (a)절연 코팅물상에 형성된 두께 100내지 1000Å을 가지는 실리콘 필름상에, 각각 주로 산화실리콘 또는 아질산실리콘을 함유사는 층 및 주로 유기물질을 함유하는 층을 선택적으로 형성시키는 단계 및 (b)상기 마스크를 사용하여, 둘다 실리콘을 에칭시키는 작용을 가지는 비-이온화 상태인 액체 또는 가스에 의해 실리콘 필름을 에칭시켜 테이퍼링된 엣지를 지는 섬-유사 박막 실리콘 반도체 영역을 형성시키는 단계를 포함하는 박막 반도체 장치 제조방법.(a) selectively forming a layer containing mainly silicon oxide or silicon nitrite and a layer mainly containing an organic material, respectively, on a silicon film having a thickness of 100 to 1000 GPa formed on an insulating coating, and (b) the mask Fabricating a thin film semiconductor device comprising etching a silicon film with a liquid or gas in a non-ionized state, both of which have the action of etching silicon, to form a tapered edged island-like thin film silicon semiconductor region. Way. 제35항에 있어서, 상기 단계(a)에서 주로 유기물질을 함유하는 층을 실질적으로 레지스트인 박막 반도체장치 제조방법.36. The method of manufacturing a thin film semiconductor device according to claim 35, wherein in step (a), the layer mainly containing organic material is substantially resist. 제35항에 있어서, 상기 단계(b)에서 상기 실리콘을 에칭시키는 작용을 가지는 액체가 NH2그룹을 함유하는 박막 반도체장치 제조방법.36. The method of claim 35 wherein the liquid having the action of etching the silicon in step (b) contains an NH 2 group. 제35항에 있어서, 상기 단계(b)에서 상기 실리콘을 에칭시키는 작용을 가지는 액체가 불소산과 아질산의 혼합용액인 박막 반도체장치 제조방법.36. The method of claim 35, wherein the liquid having the action of etching the silicon in step (b) is a mixed solution of fluoric acid and nitrous acid. 제35항에 있어서, 상기 단계(b)에서 상기 실리콘을 에칭시키는 작용을 가지는 액체가 히드라진을 함유하는 박막 반도체장치 제조방법.36. The method of claim 35, wherein the liquid having the action of etching the silicon in step (b) contains hydrazine. 제35항에 있어서, 상기 단계(b)에서 상기 실리콘을 에칭시키는 작용을 가지는 액체가 에틸렌 디아민을 함유하는 박막 반도체장치 제조방법.36. The method of claim 35 wherein the liquid having the action of etching the silicon in step (b) contains ethylene diamine. 제35항에 있어서, 상기 단계(b)에서 상기 실리콘을 에칭시키는 작용을 갖는 가스가 불화염소를 함유하는 박막 반도체장치 제조방법.36. The method of claim 35 wherein the gas having the action of etching the silicon in step (b) contains chlorine fluoride. 제35항에 있어서, 상기 실리콘 필름 아래에 형성된 절연 코팅물이 주로 산화실리콘 또는 아질산실리콘층을 함유하는 박막 반도체 장치 제조방법.36. The method of claim 35, wherein the insulating coating formed under the silicon film mainly contains a silicon oxide or silicon nitrite layer. (a)드라이 에칭 기술을 통해 절연 코팅상에 형성된 실리콘 필름을 에칭시켜, 각각 주로 산화실리콘 또는 아질산 실리콘을 함유하는 층 및 주로 유기물질을 함유하는 층으로 구성된 마스크 필름이 형성된 테이퍼링된 엣지를 갖는 섬-유사 박막 실리콘 반도체 영역을 형성시키는 단계; (b)둘다 실리콘 필름을 에칭시키는 작용을 가지며 비-이온화 상태인 액체 또는 가스에 의해 상기 박막 실리콘 반도체 영역의 엣지 부분을 프로세싱시키는 단계 및 (c)상기 박막 반도체 영역을 가로지르는 게이트 전극을 형성시키는 단계를 포함하는 박막 반도체 장치 제조방법.(a) an island having a tapered edge formed by etching a silicon film formed on an insulating coating through a dry etching technique, each having a mask film formed of a layer mainly containing silicon oxide or silicon nitrite and a layer mainly containing organic material Forming a similar thin film silicon semiconductor region; (b) processing an edge portion of the thin film silicon semiconductor region with a liquid or gas that is both non-ionized and having a function of etching the silicon film; and (c) forming a gate electrode across the thin film semiconductor region. A thin film semiconductor device manufacturing method comprising the step. 제43항에 있어서, 상기 단계(a)에서 주로 유기물질을 함유하는 층이 실질적으로 레지스터인 박막 반도체장치 제조방법.44. The method of manufacturing a thin film semiconductor device according to claim 43, wherein in step (a), the layer mainly containing organic material is substantially a resistor. 제43항에 있어서, 상기 단계(b)에서 상기 실리콘을 에칭시키는 작용을 가지는 액체가 NH2그룹을 함유하는 박막 반도체 장치 제조방법.44. The method of claim 43, wherein the liquid having the action of etching the silicon in step (b) contains an NH 2 group. 제43항에 있어서, 상기 단계(b)에서 상기 실리콘을 에칭시키는 작용을 가지는 액체가 불소산과 아질산의 혼합용액인 박막 반도체 장치 제조방법.The method of claim 43, wherein the liquid having the action of etching the silicon in the step (b) is a mixed solution of fluoric acid and nitrous acid. 제43항에 있어서, 상기 단계(b)에서 상기 실리콘을 에칭시키는 작용을 가지는 액체가 히드라진을 함유하는 박막 반도체 장치 제조방법.44. The method of claim 43 wherein the liquid having the action of etching the silicon in step (b) contains hydrazine. 제43항에 있어서, 상기 단계(b)에서 상기 실리콘을 에칭시키는 작용을 가지는 액체가 에틸렌 디아민을 함유하는 박막 반도체 장치 제조방법.44. The method of claim 43 wherein the liquid having the action of etching the silicon in step (b) contains ethylene diamine. 제43항에 있어서, 상기 단계(b)에서 상기 실리콘을 에칭시키는 작용을 갖는 가스가 불화염소를 함유하는 박막 반도체 장치 제조방법.44. The method of claim 43 wherein the gas having the action of etching the silicon in step (b) contains chlorine fluoride. 제43항에 있어서, 상기 실리콘 필름 아래에 형성된 절연 코팅물이 주로 산화실리콘 또는 아질산 실리콘을 함유하는 박막 반도체 장치 제조방법.44. The method of claim 43, wherein the insulating coating formed under the silicon film mainly contains silicon oxide or silicon nitrite. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
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