JPS577164A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS577164A JPS577164A JP8123380A JP8123380A JPS577164A JP S577164 A JPS577164 A JP S577164A JP 8123380 A JP8123380 A JP 8123380A JP 8123380 A JP8123380 A JP 8123380A JP S577164 A JPS577164 A JP S577164A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- buffer layer
- active layer
- sio2
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To prevent the thickness of source and drain electrodes from being locally reduced, wire disconnection in the electrodes and the migration of electrode material by a method wherin the side of an active layer is formed in the shape of a taper continuous to a portion of the surface of a buffer layer. CONSTITUTION:A buffer layer 2 without the addition of Cr and an N type active layer 3 are formed on semi-insulated GaAs 1 with Cr by the epitaxial method, and SiO2 14 is provided. Photoresist 15 is employed as a mask, while the active layer 3 is mesa-etched. Etching in the transverse direction is stopped at about the end portion of SiO2 14 and that in the vertical direction is stopped when the surface of the buffer layer 2 has been etched by the specified thickness. As a result, the side face becomes taper-shaped. After this, the conventional method is used to develop and expand electrodes 17, 18 made of Au-Ge alloy from the upper face of the active layer 3 to its side so as to make the electrodes extend up to the buffer layer 2, and the electrodes are covered with SiO2 19, before being provided with an Al gate electrode 20 to complete the manufacturing process. With this construction, the yield and reliability of the device are improved, while the leakage current via the buffer layer is minimized, thereby improving its high frequency characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8123380A JPS577164A (en) | 1980-06-16 | 1980-06-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8123380A JPS577164A (en) | 1980-06-16 | 1980-06-16 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS577164A true JPS577164A (en) | 1982-01-14 |
Family
ID=13740726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8123380A Pending JPS577164A (en) | 1980-06-16 | 1980-06-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577164A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59193947A (en) * | 1983-04-19 | 1984-11-02 | Ishikawajima Harima Heavy Ind Co Ltd | Flame-retardant resin for use in oxygen atmosphere |
| EP0614215A1 (en) * | 1993-03-05 | 1994-09-07 | Alcatel N.V. | Process for forming a metal contact on a relief of a semicondactor substrate, including a step of flowing a photosensitive resin layer |
| KR100333155B1 (en) * | 1994-09-16 | 2002-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Thin film semiconductor device and manufacturing method |
-
1980
- 1980-06-16 JP JP8123380A patent/JPS577164A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59193947A (en) * | 1983-04-19 | 1984-11-02 | Ishikawajima Harima Heavy Ind Co Ltd | Flame-retardant resin for use in oxygen atmosphere |
| EP0614215A1 (en) * | 1993-03-05 | 1994-09-07 | Alcatel N.V. | Process for forming a metal contact on a relief of a semicondactor substrate, including a step of flowing a photosensitive resin layer |
| FR2702306A1 (en) * | 1993-03-05 | 1994-09-09 | Alcatel Nv | Method of self-aligning a metal contact on a substrate of semiconductor material |
| KR100333155B1 (en) * | 1994-09-16 | 2002-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Thin film semiconductor device and manufacturing method |
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