JPS56140659A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56140659A JPS56140659A JP4430180A JP4430180A JPS56140659A JP S56140659 A JPS56140659 A JP S56140659A JP 4430180 A JP4430180 A JP 4430180A JP 4430180 A JP4430180 A JP 4430180A JP S56140659 A JPS56140659 A JP S56140659A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- attached
- sio2
- wax
- cracks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000010276 construction Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000001962 electrophoresis Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
Abstract
PURPOSE:To eliminate a withstand fault by a method wherein a region located inwardly to a some extent from an end edge of an SiO2 mask pattern is covered with acid-proof wax and applied a mesa etching. CONSTITUTION:The SiO2 5 at the part where the mesa is formed by a phototyping technic is removed and a window 16 is opened. The acid-proof wax 8 is printed on the SiO2 at about 100mu inside the end edge and chemically etched. After the wax 8 is melted, the Si surface is lightly etched and attached with glass 10 by an electrophoresis method and burning-fused. Then, an electrode 11 is formed and separated into an individual. With this construction, since a pin hole is removed, the glass is not attached to the pin hole and cracks are decreased during the process. In addition, since the glass is not attached to the electrode surface during the supersonic junction of an A wire, the Si substrate is prevented from scooped cracks.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4430180A JPS56140659A (en) | 1980-04-04 | 1980-04-04 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4430180A JPS56140659A (en) | 1980-04-04 | 1980-04-04 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56140659A true JPS56140659A (en) | 1981-11-04 |
Family
ID=12687674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4430180A Pending JPS56140659A (en) | 1980-04-04 | 1980-04-04 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56140659A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0627350U (en) * | 1992-09-09 | 1994-04-12 | 有限会社プリオール | Roof carrier with roof cover for cabin |
| CN109309001A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A method of GPP chip is made using printing technology |
-
1980
- 1980-04-04 JP JP4430180A patent/JPS56140659A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0627350U (en) * | 1992-09-09 | 1994-04-12 | 有限会社プリオール | Roof carrier with roof cover for cabin |
| CN109309001A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A method of GPP chip is made using printing technology |
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