JPS577124A - Forming method for electrode of semiconductor device - Google Patents
Forming method for electrode of semiconductor deviceInfo
- Publication number
- JPS577124A JPS577124A JP8225080A JP8225080A JPS577124A JP S577124 A JPS577124 A JP S577124A JP 8225080 A JP8225080 A JP 8225080A JP 8225080 A JP8225080 A JP 8225080A JP S577124 A JPS577124 A JP S577124A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- contacting
- hole
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000009832 plasma treatment Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To improve the contacting property of aluminum with molybdenum without affecting an influence to an Si substrate by covering the substrate formed with Mo electrodes, wires with a protective film, thinly oxidizing the opening of a contacting hole, and then performing a plasma treatment and the removal of thin oxidized film. CONSTITUTION:In an MOSFET formed with a gate electrode 5, for example, made of Mo and a wiring layer 7, a PSG film 2 is accumulated, and contacting holes 9, 10 are opened at the film 2. Then, it is oxidized, and a thin SiO2 film 11 is formed at the hole 9 of the substrate 1. Then, it is plasma etched with CF4 gas, the surface of the layer 7 exposed with the hole 10 is etched and cleaned. Subsequently, the film 11 is removed with hydrofluoric acid etchant, and then aluminum electrodes, wires 12, 13 are formed. Thus, the electrode configuration with preferable contacting property can be formed without undesirable etching of the substrate 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8225080A JPS577124A (en) | 1980-06-17 | 1980-06-17 | Forming method for electrode of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8225080A JPS577124A (en) | 1980-06-17 | 1980-06-17 | Forming method for electrode of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS577124A true JPS577124A (en) | 1982-01-14 |
Family
ID=13769180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8225080A Pending JPS577124A (en) | 1980-06-17 | 1980-06-17 | Forming method for electrode of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577124A (en) |
-
1980
- 1980-06-17 JP JP8225080A patent/JPS577124A/en active Pending
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