JPS6432680A - Manufacture of field-effect transistor - Google Patents
Manufacture of field-effect transistorInfo
- Publication number
- JPS6432680A JPS6432680A JP18753187A JP18753187A JPS6432680A JP S6432680 A JPS6432680 A JP S6432680A JP 18753187 A JP18753187 A JP 18753187A JP 18753187 A JP18753187 A JP 18753187A JP S6432680 A JPS6432680 A JP S6432680A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- mask pattern
- oblique direction
- gate
- opening section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To satisfy both a low parasitic resistor with a bilateral asymmetric bored opening section and high drain breakdown strength by forming a gate electrode into an opening region obtained by removing a high-concentration N-type GaAs layer through an isotropic dry etching method from the oblique direction to the surface. CONSTITUTION:A gate electrode metal is applied into an opening region acquired by removing a high-concentration N-type GaAs layer 6 through an isotropic dry etching method from the oblique direction to the surface, and a gate electrode 11 is shaped through a lift-off method. Consequently, since the layer 6 is dry-etched in an isotropic manner from the oblique direction, side etching to a mask pattern asymmetrically progresses, thus displacing the center point of the lower section of a recess to the center point of the mask pattern. Evaporating beams are projected vertically to the mask pattern and the gate electrode is formed, thus shortening the distance of a bored opening section between a source and a gate, then lengthening the distance of the bored opening section between the gate and a drain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18753187A JPS6432680A (en) | 1987-07-29 | 1987-07-29 | Manufacture of field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18753187A JPS6432680A (en) | 1987-07-29 | 1987-07-29 | Manufacture of field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6432680A true JPS6432680A (en) | 1989-02-02 |
Family
ID=16207714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18753187A Pending JPS6432680A (en) | 1987-07-29 | 1987-07-29 | Manufacture of field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6432680A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4980312A (en) * | 1989-02-27 | 1990-12-25 | U.S. Philips Corporation | Method of manufacturing a semiconductor device having a mesa structure |
| EP0642174A1 (en) * | 1993-08-03 | 1995-03-08 | Sumitomo Electric Industries, Ltd. | MESFET with low ohmic resistance |
| US7449069B2 (en) | 2004-12-28 | 2008-11-11 | Lg Display Co., Ltd. | Slit coater having apparatus for supplying a coating solution |
| US7914843B2 (en) | 2004-12-31 | 2011-03-29 | Lg Display Co., Ltd. | Slit coater having pre-applying unit and coating method using the same |
-
1987
- 1987-07-29 JP JP18753187A patent/JPS6432680A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4980312A (en) * | 1989-02-27 | 1990-12-25 | U.S. Philips Corporation | Method of manufacturing a semiconductor device having a mesa structure |
| EP0642174A1 (en) * | 1993-08-03 | 1995-03-08 | Sumitomo Electric Industries, Ltd. | MESFET with low ohmic resistance |
| US7449069B2 (en) | 2004-12-28 | 2008-11-11 | Lg Display Co., Ltd. | Slit coater having apparatus for supplying a coating solution |
| US7914843B2 (en) | 2004-12-31 | 2011-03-29 | Lg Display Co., Ltd. | Slit coater having pre-applying unit and coating method using the same |
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