JPS647664A - Manufacture of field-effect transistor - Google Patents

Manufacture of field-effect transistor

Info

Publication number
JPS647664A
JPS647664A JP16131587A JP16131587A JPS647664A JP S647664 A JPS647664 A JP S647664A JP 16131587 A JP16131587 A JP 16131587A JP 16131587 A JP16131587 A JP 16131587A JP S647664 A JPS647664 A JP S647664A
Authority
JP
Japan
Prior art keywords
layer
photo
type operating
opening section
resist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16131587A
Other languages
Japanese (ja)
Inventor
Masayoshi Miyauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16131587A priority Critical patent/JPS647664A/en
Publication of JPS647664A publication Critical patent/JPS647664A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To form two-stage recesses excellent in the reproducibility and controllability of a shape and size, and to equalize characteristics by selectively implanting the ions of an impurity to a semiconductor substrate in a gate- electrode forming predetermined region and breaking the crystallizability of the substrate and shaping multistage recesses by utilizing the difference of etching rates generated as the result of the breaking of the crystallizability. CONSTITUTION:An insulating layer 104 and a photo-resist layer 11 with an opening section 11a are formed onto the surface of an N-type operating layer 102, and an opening section 114 wider than the opening section 11a is shaped to the insulating layer 104, using the photo-resist layer 11 as a mask. Ions are implanted into a gate-electrode forming predetermined region in the N-type operating layer 102 through the opening section 11a in the photo-resist layer 11 to form a crystal braking layer 12. The surface of the N-type operating layer 102 is etched through the opening sections 11a, 114 in the photo-resist layer 11 and the insulating layer 104, and the crystal breaking layer 12 and the N-type operating layer 102 not crystal-broken are removed, thus shaping multistage recesses 22. A gate electrode 105G is formed through a lift-off method through the photo-resist layer 11.
JP16131587A 1987-06-30 1987-06-30 Manufacture of field-effect transistor Pending JPS647664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16131587A JPS647664A (en) 1987-06-30 1987-06-30 Manufacture of field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16131587A JPS647664A (en) 1987-06-30 1987-06-30 Manufacture of field-effect transistor

Publications (1)

Publication Number Publication Date
JPS647664A true JPS647664A (en) 1989-01-11

Family

ID=15732762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16131587A Pending JPS647664A (en) 1987-06-30 1987-06-30 Manufacture of field-effect transistor

Country Status (1)

Country Link
JP (1) JPS647664A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023938A (en) * 1988-06-20 1990-01-09 Mitsubishi Electric Corp Field effect transistor
EP0447840A2 (en) * 1990-02-26 1991-09-25 Rohm Co., Ltd. Compound semiconducteur device manufacturing process and a compound semiconducteur device manufactured by the same
JPH0449626A (en) * 1990-06-19 1992-02-19 Nec Corp Field-effect transistor
US5270228A (en) * 1991-02-14 1993-12-14 Mitsubishi Denki Kabushiki Kaisha Method of fabricating gate electrode in recess
US5534452A (en) * 1994-10-11 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Method for producing semiconductor device
US5556797A (en) * 1995-05-30 1996-09-17 Hughes Aircraft Company Method of fabricating a self-aligned double recess gate profile
US5886373A (en) * 1997-01-27 1999-03-23 Mitsubishi Denki Kabushiki Kaisha Field effect transistor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023938A (en) * 1988-06-20 1990-01-09 Mitsubishi Electric Corp Field effect transistor
EP0447840A2 (en) * 1990-02-26 1991-09-25 Rohm Co., Ltd. Compound semiconducteur device manufacturing process and a compound semiconducteur device manufactured by the same
EP0447840A3 (en) * 1990-02-26 1995-08-16 Rohm Co Ltd Compound semiconducteur device manufacturing process and a compound semiconducteur device manufactured by the same
JPH0449626A (en) * 1990-06-19 1992-02-19 Nec Corp Field-effect transistor
US5270228A (en) * 1991-02-14 1993-12-14 Mitsubishi Denki Kabushiki Kaisha Method of fabricating gate electrode in recess
US5534452A (en) * 1994-10-11 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Method for producing semiconductor device
US5556797A (en) * 1995-05-30 1996-09-17 Hughes Aircraft Company Method of fabricating a self-aligned double recess gate profile
US5886373A (en) * 1997-01-27 1999-03-23 Mitsubishi Denki Kabushiki Kaisha Field effect transistor

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