JPS6446923A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6446923A JPS6446923A JP62203734A JP20373487A JPS6446923A JP S6446923 A JPS6446923 A JP S6446923A JP 62203734 A JP62203734 A JP 62203734A JP 20373487 A JP20373487 A JP 20373487A JP S6446923 A JPS6446923 A JP S6446923A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- semiconductor substrate
- initial oxide
- stepped section
- well region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To increase the throughput of a process by etching a semiconductor- substrate surface selectively coated with an initial oxide film, forming a stepped section and using the stepped section as a reference of mask alignment in a postprocess. CONSTITUTION:The surface of an N-type silicon semiconductor substrate 1 is coated with an initial oxide film 2, and the initial oxide film 2 on a predetermined well region 6 is photoetched to selectively expose the surface of the semiconductor substrate 1. The surface of the semiconductor substrate 1 is etched, employing the left initial oxide film 2 as a mask to shape a stepped section 3. Ions are implanted through a formed pad oxide film 4, a P-type impurity implanting region 5 as the well region 6 is formed, and ions are driven into the substrate 1. The initial oxide film 2 and a re-oxidized film 7 shaped through a drive-in process are removed through etching to expose the surface of the semiconductor substrate 1. Accordingly, the stepped section need not be formed to the semiconductor substrate in the drive-in process of the well region, thus improving the throughput of a process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62203734A JPS6446923A (en) | 1987-08-17 | 1987-08-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62203734A JPS6446923A (en) | 1987-08-17 | 1987-08-17 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6446923A true JPS6446923A (en) | 1989-02-21 |
Family
ID=16478974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62203734A Pending JPS6446923A (en) | 1987-08-17 | 1987-08-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6446923A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021109018A1 (en) | 2020-05-15 | 2021-11-18 | Toyota Jidosha Kabushiki Kaisha | Fuel cell system |
-
1987
- 1987-08-17 JP JP62203734A patent/JPS6446923A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021109018A1 (en) | 2020-05-15 | 2021-11-18 | Toyota Jidosha Kabushiki Kaisha | Fuel cell system |
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