JPS6446923A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6446923A
JPS6446923A JP62203734A JP20373487A JPS6446923A JP S6446923 A JPS6446923 A JP S6446923A JP 62203734 A JP62203734 A JP 62203734A JP 20373487 A JP20373487 A JP 20373487A JP S6446923 A JPS6446923 A JP S6446923A
Authority
JP
Japan
Prior art keywords
oxide film
semiconductor substrate
initial oxide
stepped section
well region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62203734A
Other languages
Japanese (ja)
Inventor
Toshizo Kamata
Seiji Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP62203734A priority Critical patent/JPS6446923A/en
Publication of JPS6446923A publication Critical patent/JPS6446923A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the throughput of a process by etching a semiconductor- substrate surface selectively coated with an initial oxide film, forming a stepped section and using the stepped section as a reference of mask alignment in a postprocess. CONSTITUTION:The surface of an N-type silicon semiconductor substrate 1 is coated with an initial oxide film 2, and the initial oxide film 2 on a predetermined well region 6 is photoetched to selectively expose the surface of the semiconductor substrate 1. The surface of the semiconductor substrate 1 is etched, employing the left initial oxide film 2 as a mask to shape a stepped section 3. Ions are implanted through a formed pad oxide film 4, a P-type impurity implanting region 5 as the well region 6 is formed, and ions are driven into the substrate 1. The initial oxide film 2 and a re-oxidized film 7 shaped through a drive-in process are removed through etching to expose the surface of the semiconductor substrate 1. Accordingly, the stepped section need not be formed to the semiconductor substrate in the drive-in process of the well region, thus improving the throughput of a process.
JP62203734A 1987-08-17 1987-08-17 Manufacture of semiconductor device Pending JPS6446923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62203734A JPS6446923A (en) 1987-08-17 1987-08-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62203734A JPS6446923A (en) 1987-08-17 1987-08-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6446923A true JPS6446923A (en) 1989-02-21

Family

ID=16478974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62203734A Pending JPS6446923A (en) 1987-08-17 1987-08-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6446923A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021109018A1 (en) 2020-05-15 2021-11-18 Toyota Jidosha Kabushiki Kaisha Fuel cell system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021109018A1 (en) 2020-05-15 2021-11-18 Toyota Jidosha Kabushiki Kaisha Fuel cell system

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