JPS57124476A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57124476A
JPS57124476A JP908581A JP908581A JPS57124476A JP S57124476 A JPS57124476 A JP S57124476A JP 908581 A JP908581 A JP 908581A JP 908581 A JP908581 A JP 908581A JP S57124476 A JPS57124476 A JP S57124476A
Authority
JP
Japan
Prior art keywords
ions
base body
film
silicide
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP908581A
Other languages
Japanese (ja)
Other versions
JPH0237093B2 (en
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP908581A priority Critical patent/JPH0237093B2/en
Publication of JPS57124476A publication Critical patent/JPS57124476A/en
Priority to US06/645,536 priority patent/US4622735A/en
Priority to US06/832,647 priority patent/US4830971A/en
Publication of JPH0237093B2 publication Critical patent/JPH0237093B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the ohmic of a metal silicide and a base body by implanting the ions of an impurity having a reverse conduction type to the base body in the interface section of a metallic film and silicon while introducing the impurity into the base body and removing the metallic film of the remainder. CONSTITUTION:W Is evaporated onto the whole surface of a wafer under vacuum. When the As ions are implanted in the interface of the whole surface of the wafer, the W film is reacted with Si, and WSi2 18, 18', 18'' are formed onto a source and a drain and a poly Si gate. A P-N junction is shaped simultaneously into the substrate Si under the silicide. SiO2 formed to a gate end section is removed, the As ions are implanted again, and a shallow P-N junction 20 is shaped. When the W film not reacted is removed through etching, constitution molded through the mutual self-matching of the silicide with gate poly Si and the source and drain sections is obtained.
JP908581A 1980-12-12 1981-01-26 HANDOTAISOCHINOSEIZOHOHO Expired - Lifetime JPH0237093B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP908581A JPH0237093B2 (en) 1981-01-26 1981-01-26 HANDOTAISOCHINOSEIZOHOHO
US06/645,536 US4622735A (en) 1980-12-12 1984-08-29 Method for manufacturing a semiconductor device utilizing self-aligned silicide regions
US06/832,647 US4830971A (en) 1980-12-12 1986-02-25 Method for manufacturing a semiconductor device utilizing self-aligned contact regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP908581A JPH0237093B2 (en) 1981-01-26 1981-01-26 HANDOTAISOCHINOSEIZOHOHO

Publications (2)

Publication Number Publication Date
JPS57124476A true JPS57124476A (en) 1982-08-03
JPH0237093B2 JPH0237093B2 (en) 1990-08-22

Family

ID=11710773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP908581A Expired - Lifetime JPH0237093B2 (en) 1980-12-12 1981-01-26 HANDOTAISOCHINOSEIZOHOHO

Country Status (1)

Country Link
JP (1) JPH0237093B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161372A (en) * 1982-02-10 1983-09-24 Nec Corp Manufacture of mos integrated circuit
JPS5999774A (en) * 1982-11-29 1984-06-08 Fujitsu Ltd Manufacture of semiconductor device
JPS59172775A (en) * 1983-03-23 1984-09-29 Toshiba Corp Semiconductor device and manufacture thereof
JPS6037770A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Semiconductor device
JPS60501083A (en) * 1983-04-18 1985-07-11 エヌ・シー・アール・インターナショナル・インコーポレイテッド Manufacturing method of semiconductor device
JPS61129873A (en) * 1984-11-28 1986-06-17 Seiko Epson Corp Equipment for manufacturing semiconductor
JPS624371A (en) * 1985-06-28 1987-01-10 ノ−ザン・テレコム・リミテツド Manufacture of vlsi circuit using heat resistant metal silicide
JPS62162362A (en) * 1986-01-10 1987-07-18 Mitsubishi Electric Corp Mos integrated circuit and manufacture thereof
JPS641283A (en) * 1987-06-23 1989-01-05 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH01298768A (en) * 1988-05-27 1989-12-01 Sony Corp Manufacture of mis transistor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161372A (en) * 1982-02-10 1983-09-24 Nec Corp Manufacture of mos integrated circuit
JPS5999774A (en) * 1982-11-29 1984-06-08 Fujitsu Ltd Manufacture of semiconductor device
JPS59172775A (en) * 1983-03-23 1984-09-29 Toshiba Corp Semiconductor device and manufacture thereof
JPS60501083A (en) * 1983-04-18 1985-07-11 エヌ・シー・アール・インターナショナル・インコーポレイテッド Manufacturing method of semiconductor device
JPS6037770A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Semiconductor device
JPS61129873A (en) * 1984-11-28 1986-06-17 Seiko Epson Corp Equipment for manufacturing semiconductor
JPS624371A (en) * 1985-06-28 1987-01-10 ノ−ザン・テレコム・リミテツド Manufacture of vlsi circuit using heat resistant metal silicide
JPS62162362A (en) * 1986-01-10 1987-07-18 Mitsubishi Electric Corp Mos integrated circuit and manufacture thereof
JPS641283A (en) * 1987-06-23 1989-01-05 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH01298768A (en) * 1988-05-27 1989-12-01 Sony Corp Manufacture of mis transistor

Also Published As

Publication number Publication date
JPH0237093B2 (en) 1990-08-22

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