KR950030397A - Capacitor Formation Method of Semiconductor Device - Google Patents
Capacitor Formation Method of Semiconductor Device Download PDFInfo
- Publication number
- KR950030397A KR950030397A KR1019940008067A KR19940008067A KR950030397A KR 950030397 A KR950030397 A KR 950030397A KR 1019940008067 A KR1019940008067 A KR 1019940008067A KR 19940008067 A KR19940008067 A KR 19940008067A KR 950030397 A KR950030397 A KR 950030397A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- film
- charge storage
- storage electrode
- semiconductor device
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
본 발명은 반도체 소자의 캐패시터 형성방법에 관한 것으로, 전하저장전극 형성 후 질화막 및 Ta2O5막을 순차적으로 형성하여 유전체막을 형성하고 열처리 공정을 거치면 Ta2O5의 그레인이 성장하여 표면거칠기가 증가하고 이로 인한 누설전류의 증가로 소자의 특성 및 신뢰성이 감소되는 것을 개선하기 위해 전하저장전극 형성후 질화막, 제1Ta2O5막, 산화막 및 제2Ta2O5막을 순차적으로 형성하고 습식세정 및 열처리공정을 진행하여 유전체막을 형성한 다음 그 상부에 플레이트 전극을 형성시키므로써 상기한 단점이 해소되고 DRAM과 같은 초고집적 반도체 소자의 캐패시터 제조공정에 사용된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a capacitor of a semiconductor device, wherein after forming a charge storage electrode, a nitride film and a Ta 2 O 5 film are sequentially formed to form a dielectric film, and when the heat treatment is performed, grains of Ta 2 O 5 grow to increase surface roughness. After the formation of the charge storage electrode, the nitride film, the first Ta 2 O 5 film, the oxide film and the second Ta 2 O 5 film are sequentially formed and wet-cleaned and heat-treated after the formation of the charge storage electrode. The above-mentioned disadvantages are solved by forming a dielectric film through a process and then forming a plate electrode thereon, which is used in a capacitor manufacturing process of an ultra-high density semiconductor device such as DRAM.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A내지 제2C도는 본 발명에 따른 반도체 소자의 캐패시터 형성방법을 설명하기 위한 소자의 단면도.2A to 2C are cross-sectional views of a device for explaining a method of forming a capacitor of a semiconductor device according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940008067A KR100280803B1 (en) | 1994-04-18 | 1994-04-18 | Capacitor Formation Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940008067A KR100280803B1 (en) | 1994-04-18 | 1994-04-18 | Capacitor Formation Method of Semiconductor Device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950030397A true KR950030397A (en) | 1995-11-24 |
KR100280803B1 KR100280803B1 (en) | 2001-02-01 |
Family
ID=66677857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940008067A KR100280803B1 (en) | 1994-04-18 | 1994-04-18 | Capacitor Formation Method of Semiconductor Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100280803B1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100224728B1 (en) * | 1996-12-10 | 1999-10-15 | 윤종용 | Fabrication method for Ta205 dielectric layer capacitor |
KR100304699B1 (en) * | 1999-01-05 | 2001-09-26 | 윤종용 | Method of manufacturing capacitor having tantalum oxide |
KR100436050B1 (en) * | 2001-08-24 | 2004-06-12 | 주식회사 하이닉스반도체 | Method of fabricating capacitor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990054911A (en) * | 1997-12-26 | 1999-07-15 | 김영환 | Capacitor Manufacturing Method of Semiconductor Device |
-
1994
- 1994-04-18 KR KR1019940008067A patent/KR100280803B1/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100224728B1 (en) * | 1996-12-10 | 1999-10-15 | 윤종용 | Fabrication method for Ta205 dielectric layer capacitor |
KR100304699B1 (en) * | 1999-01-05 | 2001-09-26 | 윤종용 | Method of manufacturing capacitor having tantalum oxide |
KR100436050B1 (en) * | 2001-08-24 | 2004-06-12 | 주식회사 하이닉스반도체 | Method of fabricating capacitor |
Also Published As
Publication number | Publication date |
---|---|
KR100280803B1 (en) | 2001-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5164337A (en) | Method of fabricating a semiconductor device having a capacitor in a stacked memory cell | |
US5985730A (en) | Method of forming a capacitor of a semiconductor device | |
KR960036062A (en) | Capacitor of Highly Integrated Semiconductor Device and Manufacturing Method Thereof | |
KR950030397A (en) | Capacitor Formation Method of Semiconductor Device | |
KR100244411B1 (en) | Method for manufacturing semiconductor device | |
KR0151257B1 (en) | Method for manufacturing a semiconductor memory device | |
KR100268776B1 (en) | A manufacturing method of semiconductor device | |
KR950007098A (en) | DRAM cell manufacturing method | |
JPS61129872A (en) | Manufacture of semiconductor device | |
KR100190193B1 (en) | Capacitor stroage electrode fabrication method of semiconductor device | |
KR960003779B1 (en) | Stack capacitor manufacture of semiconductor device | |
JPH04218958A (en) | Semiconductor memory and its manufacture | |
KR100293641B1 (en) | Method for forming charge storage electrode of semiconductor device | |
KR0156169B1 (en) | Method of manufacturing semiconductor memory | |
KR930011260A (en) | Method for manufacturing charge storage electrode with increased surface area | |
KR100232161B1 (en) | Manufacturing method of semiconductor memory device | |
KR970053822A (en) | Capacitor Manufacturing Method of Semiconductor Device | |
KR970054549A (en) | Capacitor Manufacturing Method of Semiconductor Device | |
KR940008072A (en) | Capacitor manufacturing method having high storage capacity of semiconductor device | |
KR950009923A (en) | Method for manufacturing storage electrode of semiconductor device | |
KR970018556A (en) | Capacitor Manufacturing Method of Semiconductor Memory Device | |
KR970024179A (en) | Method for forming charge storage electrode of capacitor | |
KR960002789A (en) | Capacitor Manufacturing Method of Semiconductor Device | |
KR930022554A (en) | Structure and Manufacturing Method of Memory Capacitor | |
KR970024217A (en) | Method of manufacturing capacitors in semiconductor devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20081027 Year of fee payment: 9 |
|
LAPS | Lapse due to unpaid annual fee |