KR950030397A - Capacitor Formation Method of Semiconductor Device - Google Patents

Capacitor Formation Method of Semiconductor Device Download PDF

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Publication number
KR950030397A
KR950030397A KR1019940008067A KR19940008067A KR950030397A KR 950030397 A KR950030397 A KR 950030397A KR 1019940008067 A KR1019940008067 A KR 1019940008067A KR 19940008067 A KR19940008067 A KR 19940008067A KR 950030397 A KR950030397 A KR 950030397A
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KR
South Korea
Prior art keywords
forming
film
charge storage
storage electrode
semiconductor device
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KR1019940008067A
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Korean (ko)
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KR100280803B1 (en
Inventor
박상훈
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김주용
현대전자산업 주식회사
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Priority to KR1019940008067A priority Critical patent/KR100280803B1/en
Publication of KR950030397A publication Critical patent/KR950030397A/en
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Publication of KR100280803B1 publication Critical patent/KR100280803B1/en

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  • Semiconductor Memories (AREA)

Abstract

본 발명은 반도체 소자의 캐패시터 형성방법에 관한 것으로, 전하저장전극 형성 후 질화막 및 Ta2O5막을 순차적으로 형성하여 유전체막을 형성하고 열처리 공정을 거치면 Ta2O5의 그레인이 성장하여 표면거칠기가 증가하고 이로 인한 누설전류의 증가로 소자의 특성 및 신뢰성이 감소되는 것을 개선하기 위해 전하저장전극 형성후 질화막, 제1Ta2O5막, 산화막 및 제2Ta2O5막을 순차적으로 형성하고 습식세정 및 열처리공정을 진행하여 유전체막을 형성한 다음 그 상부에 플레이트 전극을 형성시키므로써 상기한 단점이 해소되고 DRAM과 같은 초고집적 반도체 소자의 캐패시터 제조공정에 사용된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a capacitor of a semiconductor device, wherein after forming a charge storage electrode, a nitride film and a Ta 2 O 5 film are sequentially formed to form a dielectric film, and when the heat treatment is performed, grains of Ta 2 O 5 grow to increase surface roughness. After the formation of the charge storage electrode, the nitride film, the first Ta 2 O 5 film, the oxide film and the second Ta 2 O 5 film are sequentially formed and wet-cleaned and heat-treated after the formation of the charge storage electrode. The above-mentioned disadvantages are solved by forming a dielectric film through a process and then forming a plate electrode thereon, which is used in a capacitor manufacturing process of an ultra-high density semiconductor device such as DRAM.

Description

반도체 소자의 캐패시터 형성방법Capacitor Formation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A내지 제2C도는 본 발명에 따른 반도체 소자의 캐패시터 형성방법을 설명하기 위한 소자의 단면도.2A to 2C are cross-sectional views of a device for explaining a method of forming a capacitor of a semiconductor device according to the present invention.

Claims (1)

반도체 소자의 캐패시터 형성방법에 있어서, 절연막(3)이 형성된 실리콘기판(1)의 불순물 영역(2) 상부에 전하저장전극 콘택용 마스크를 이용하여 사진 및 식각공정에 의해 전하저장전극 콘택홀을 형성하는 단계와, 상기 단계로부터 전체상부에 일정두께의 폴리실리콘층(4)을 형성하고 전하저장전극용 마스크를 이용하여 상기 폴리실리콘층(4)의 양측면을 식각하여 전하저장전극을 형성시키는 단계와, 상기 단계로부터 질화막(5)을 일정두께로 형성한 후 패터닝하는 단계와, 상기 단계로부터 제1Ta2O5막(8), 산화막(9) 및 제2Ta2O5(10)을 각각 형성 및 패터닝하는 단계와, 상기 단계로부터 황산 및 과산화 수소수의 혼합액에 의한 세정 및 소정농도의 HF에 의한 세정을 순차적으로 실시한 다음 UV-O3및 건식 O2에 의한 열처리공정을 진행시키는 단계와, 상기 단계로부터 폴리실리콘층(7)을 형성하여 플레이트 전극이 형성되는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 캐패시터 형성방법.In the method for forming a capacitor of a semiconductor device, a charge storage electrode contact hole is formed by a photolithography and an etching process using a charge storage electrode contact mask on an impurity region 2 of a silicon substrate 1 having an insulating film 3 formed thereon. And forming a polysilicon layer 4 having a predetermined thickness on the whole from the step, and etching both sides of the polysilicon layer 4 using a mask for charge storage electrodes to form a charge storage electrode. Forming a nitride film 5 to a predetermined thickness from the step and patterning the same, and forming a first Ta 2 O 5 film 8, an oxide film 9, and a second Ta 2 O 5 10 from the step, respectively. Patterning, washing with a mixture of sulfuric acid and hydrogen peroxide solution from the step and washing with a predetermined concentration of HF, followed by heat treatment by UV-O 3 and dry O 2 , and And forming a plate electrode by forming the polysilicon layer (7) from the step. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019940008067A 1994-04-18 1994-04-18 Capacitor Formation Method of Semiconductor Device KR100280803B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940008067A KR100280803B1 (en) 1994-04-18 1994-04-18 Capacitor Formation Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940008067A KR100280803B1 (en) 1994-04-18 1994-04-18 Capacitor Formation Method of Semiconductor Device

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KR950030397A true KR950030397A (en) 1995-11-24
KR100280803B1 KR100280803B1 (en) 2001-02-01

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KR1019940008067A KR100280803B1 (en) 1994-04-18 1994-04-18 Capacitor Formation Method of Semiconductor Device

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100224728B1 (en) * 1996-12-10 1999-10-15 윤종용 Fabrication method for Ta205 dielectric layer capacitor
KR100304699B1 (en) * 1999-01-05 2001-09-26 윤종용 Method of manufacturing capacitor having tantalum oxide
KR100436050B1 (en) * 2001-08-24 2004-06-12 주식회사 하이닉스반도체 Method of fabricating capacitor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990054911A (en) * 1997-12-26 1999-07-15 김영환 Capacitor Manufacturing Method of Semiconductor Device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100224728B1 (en) * 1996-12-10 1999-10-15 윤종용 Fabrication method for Ta205 dielectric layer capacitor
KR100304699B1 (en) * 1999-01-05 2001-09-26 윤종용 Method of manufacturing capacitor having tantalum oxide
KR100436050B1 (en) * 2001-08-24 2004-06-12 주식회사 하이닉스반도체 Method of fabricating capacitor

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Publication number Publication date
KR100280803B1 (en) 2001-02-01

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