KR940003020A

KR940003020A - Transistor Formation Method of Highly Integrated Semiconductor Devices

Info

Publication number: KR940003020A
Application number: KR1019920011843A
Authority: KR
Inventors: 이석희; 이현우
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1992-07-03
Filing date: 1992-07-03
Publication date: 1994-02-19

Abstract

폴리 실리콘 게이트를 열산화시켜 그 상부에 소정 두께의 산화막을 형성하는 대신에, 고온에서 증착되는 실리콘 산화막을 폴리실리콘 게이트 상부에 형성시킴으로, 게이트 버즈비크(Bird's Beak) 형성을 방지하며, 식각 손상 제거 효과도 동시에 얻을 수 있다.Instead of thermally oxidizing the polysilicon gate to form an oxide film having a predetermined thickness thereon, a silicon oxide film deposited at a high temperature is formed on the polysilicon gate to prevent the formation of a gate bird's beak and to remove etching damage. The effect can be obtained at the same time.

Description

Transistor Formation Method of Highly Integrated Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2a도 및 2b는 본 발명의 고집적 반도체 소자의 공정 순서도로서,2a and 2b are process flowcharts of the highly integrated semiconductor device of the present invention.

2a도는 실리콘 기판상부에 게이트 산화막과 게이트 폴리실리콘을 순차적으로 증착시키는 단계를 나타내는 반도체 소자의 단면도,2A is a cross-sectional view of a semiconductor device illustrating a step of sequentially depositing a gate oxide film and a gate polysilicon over a silicon substrate;

제2b도는 제2a도의 공정후, 게이트 폴리 실리콘 상부에 실리콘 산화막을 증착시키는 단계를 나타내는 반도체 소자의 단면도.FIG. 2B is a cross-sectional view of the semiconductor device, after the process of FIG. 2A, depositing a silicon oxide film on the gate polysilicon.

Claims

Growing a gate oxide film 3 on the silicon substrate 1, depositing a gate polysilicon 5 on the gate oxide film 3, and doping impurities 7 in a predetermined portion of the silicon substrate 1. Forming a word line by applying a photoresist layer on the gate polysilicon 5 and then forming a mask to etch a predetermined portion of the lower gate polysilicon 5 to form a word line; A method of forming a highly integrated semiconductor device and a transistor, comprising: forming a silicon oxide film 7 having a predetermined thickness on a word line by performing an oxidation process, wherein the thermal oxidation process is performed to prevent formation of a gate buzz beak at the gate edge portion. Instead, the transistor of the highly integrated semiconductor device, comprising the step of depositing a silicon oxide film 11 on the word line at a high temperature at a high temperature. The method of forming.

2. The method for forming a transistor of a highly integrated semiconductor device according to claim 1, wherein the temperature when the silicon oxide film (11) is increased at a high temperature is 800 deg.

※ Note: The disclosure is based on the initial application.