KR950021371A - Method for manufacturing device isolation oxide film of semiconductor device - Google Patents
Method for manufacturing device isolation oxide film of semiconductor device Download PDFInfo
- Publication number
- KR950021371A KR950021371A KR1019930030470A KR930030470A KR950021371A KR 950021371 A KR950021371 A KR 950021371A KR 1019930030470 A KR1019930030470 A KR 1019930030470A KR 930030470 A KR930030470 A KR 930030470A KR 950021371 A KR950021371 A KR 950021371A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- device isolation
- isolation oxide
- nitride film
- polysilicon
- Prior art date
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- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Weting (AREA)
Abstract
본 발명은 반도체소장의 소자분리산화막 제조방법에 관한 것으로, 실리콘기판 상부에 패드산화막, 다결정실리콘 및 질화막을 증착시킨후, 마스크 공정으로 질화막과 다결정실리콘 식각하고 패드산화막을 성장시켜 소자분리산화막을 형성한 변형된 LOCOS구조에서,상기 질화막을 인산을 사용하여 식각하고, 이어서 80℃NH4OH 용액을 사용하여 다결정실리콘을 제거하고 H2O2가 함유된 용액을 사용하여 세정함으로써, 잔여물질이나 손상없는 소자분리산화막 및 패드산화막을 형성하여 반도체소자의 신뢰도를 높이는 기술이다.The present invention relates to a method of manufacturing a device isolation oxide film in a semiconductor device, and after depositing a pad oxide film, a polysilicon and a nitride film on a silicon substrate, etching the nitride film and polycrystalline silicon by a mask process and growing a pad oxide film to form a device isolation oxide film In one modified LOCOS structure, the nitride film is etched using phosphoric acid, followed by removal of polycrystalline silicon using an 80 ° C. NH 4 OH solution and cleaning with a solution containing H 2 O 2 , thereby leaving no residue or damage. It is a technology for increasing the reliability of semiconductor devices by forming a device isolation oxide film and a pad oxide film.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도 내지 제6도는 본 발명의 실시예로 반도체소자의 소자분리산화막 제조공정을 도시한 단면도이다.1 to 6 are cross-sectional views illustrating a device isolation oxide film manufacturing process of a semiconductor device in accordance with an embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930030470A KR950021371A (en) | 1993-12-28 | 1993-12-28 | Method for manufacturing device isolation oxide film of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930030470A KR950021371A (en) | 1993-12-28 | 1993-12-28 | Method for manufacturing device isolation oxide film of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950021371A true KR950021371A (en) | 1995-07-26 |
Family
ID=66853239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930030470A KR950021371A (en) | 1993-12-28 | 1993-12-28 | Method for manufacturing device isolation oxide film of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950021371A (en) |
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1993
- 1993-12-28 KR KR1019930030470A patent/KR950021371A/en not_active Application Discontinuation
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