KR950021371A - Method for manufacturing device isolation oxide film of semiconductor device - Google Patents

Method for manufacturing device isolation oxide film of semiconductor device Download PDF

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Publication number
KR950021371A
KR950021371A KR1019930030470A KR930030470A KR950021371A KR 950021371 A KR950021371 A KR 950021371A KR 1019930030470 A KR1019930030470 A KR 1019930030470A KR 930030470 A KR930030470 A KR 930030470A KR 950021371 A KR950021371 A KR 950021371A
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KR
South Korea
Prior art keywords
oxide film
device isolation
isolation oxide
nitride film
polysilicon
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Application number
KR1019930030470A
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Korean (ko)
Inventor
이주영
김우진
이완기
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019930030470A priority Critical patent/KR950021371A/en
Publication of KR950021371A publication Critical patent/KR950021371A/en

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  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Weting (AREA)

Abstract

본 발명은 반도체소장의 소자분리산화막 제조방법에 관한 것으로, 실리콘기판 상부에 패드산화막, 다결정실리콘 및 질화막을 증착시킨후, 마스크 공정으로 질화막과 다결정실리콘 식각하고 패드산화막을 성장시켜 소자분리산화막을 형성한 변형된 LOCOS구조에서,상기 질화막을 인산을 사용하여 식각하고, 이어서 80℃NH4OH 용액을 사용하여 다결정실리콘을 제거하고 H2O2가 함유된 용액을 사용하여 세정함으로써, 잔여물질이나 손상없는 소자분리산화막 및 패드산화막을 형성하여 반도체소자의 신뢰도를 높이는 기술이다.The present invention relates to a method of manufacturing a device isolation oxide film in a semiconductor device, and after depositing a pad oxide film, a polysilicon and a nitride film on a silicon substrate, etching the nitride film and polycrystalline silicon by a mask process and growing a pad oxide film to form a device isolation oxide film In one modified LOCOS structure, the nitride film is etched using phosphoric acid, followed by removal of polycrystalline silicon using an 80 ° C. NH 4 OH solution and cleaning with a solution containing H 2 O 2 , thereby leaving no residue or damage. It is a technology for increasing the reliability of semiconductor devices by forming a device isolation oxide film and a pad oxide film.

Description

반도체 소자의 소자분리산화막 제조방법Method for manufacturing device isolation oxide film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제6도는 본 발명의 실시예로 반도체소자의 소자분리산화막 제조공정을 도시한 단면도이다.1 to 6 are cross-sectional views illustrating a device isolation oxide film manufacturing process of a semiconductor device in accordance with an embodiment of the present invention.

Claims (4)

실리콘기판 상부에 패드산화막, 다결정실리콘 및 질화막을 증착시키는 공정과, 상기 질화막 상부에 소자분리 마스크용 감광막패턴을 형성하고 상기 노출된 질화막을 식각하여 질화막패턴을 형성하고, 노출되는 다결정실리콘의 일정두께를 식각하는 공정과, 상기 감광막패턴을 제거한 후, 열산화공정으로 상기 다결정실리콘과 그하부의 실리콘기판을 산화시켜 소자분리산화막을 형성하는 공정과, 인산을 사용하여 상기 질화막패턴을 제거하고, 노출되는 다결정실리콘을 습식식각방법으로 제거하는 공정과, H2O2를 함유한 용액을 사용하여 깨끗히 세정하는 공정을 포함하는 반도체소자의 소자분리산화막 제조방법.Depositing a pad oxide film, a polysilicon and a nitride film on the silicon substrate, forming a photoresist pattern for device isolation mask on the nitride film, etching the exposed nitride film to form a nitride film pattern, and a predetermined thickness of the exposed polycrystalline silicon Etching to remove the photoresist pattern, and then thermally oxidizing the polysilicon and the underlying silicon substrate to form a device isolation oxide film, and removing the nitride pattern by using phosphoric acid, Method of manufacturing a device isolation oxide film of a semiconductor device comprising the step of removing the polysilicon to be wet etching method and the step of cleaning using a solution containing H 2 O 2 . 제1항에 있어서, 상기 다결정실리콘의 습식식각방법은 80℃NH4OH용액 (NH4OH:H2O)을 사용하는 것을 특징으로하는 반도체소장의 소자분리산화막 제조방법.The method of claim 1, wherein the wet etching method of the polysilicon is made using an 80 ° C. NH 4 OH solution (NH 4 OH: H 2 O). 제1항에 있어서, H2O2가 함유된 용액은 사용하는 H2SO4:H2O2의 비율이 3:1로 하여 제조한 것을 특징으로 하는 반도체소자의 소자분리산화막 제조방법.The method of claim 1, wherein the H 2 O 2 -containing solution is prepared by using a ratio of H 2 SO 4 : H 2 O 2 in a ratio of 3: 1. 제1항에 있어서, H2O2가 함유된 용액은 사용하는 HCL:H2O2:H2O의 비율로 1:1:5로 하여 제조한 것을 특징으로하는 반도체소자의 소자분리산화막 제조방법.The device of claim 1, wherein the solution containing H 2 O 2 is prepared at a ratio of 1: 1: 5 using a ratio of HCL: H 2 O 2 : H 2 O to be used. Way. ※참고사항:최초출원 내용에 의하여 공개하는 것임.※ Note: This is to be disclosed based on the first application.
KR1019930030470A 1993-12-28 1993-12-28 Method for manufacturing device isolation oxide film of semiconductor device KR950021371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930030470A KR950021371A (en) 1993-12-28 1993-12-28 Method for manufacturing device isolation oxide film of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930030470A KR950021371A (en) 1993-12-28 1993-12-28 Method for manufacturing device isolation oxide film of semiconductor device

Publications (1)

Publication Number Publication Date
KR950021371A true KR950021371A (en) 1995-07-26

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KR1019930030470A KR950021371A (en) 1993-12-28 1993-12-28 Method for manufacturing device isolation oxide film of semiconductor device

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KR (1) KR950021371A (en)

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