JPS5750426A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent crystalline defects from exerting adverse effect on a semiconductor element by generating a non-defective crystal region only to a region constituting the semiconductor element in the substrate of a semiconductor and mounting a means generating a large number of crystalline defects to other regions. CONSTITUTION:The means is mounted which generates crystalline defects in the base except the semiconductor element section of a surface layer of the semiconductor signal crystal base more than the number of the defects of the element section by making the concentration of oxygen in the element section lower than the concentration except the element section. For example, an oxide film 2 is formed on the surface of the silicon substrate 1, the oxide films on regions in which the elements are shaped are removed and silicon surfaces are exposed. The whole is thermally treated in an inert gas and the regions 3, 4 with the low concentration of oxygen are formed, and the whole is thermally treated in oxygen. Accordingly, a large number of the minute defects are generated in the region 1 in which the concentration of oxygen does not lower, and the defects are decreased in the regions 3, 4 with the low concentration of oxygen.