JPS57164546A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57164546A JPS57164546A JP4926581A JP4926581A JPS57164546A JP S57164546 A JPS57164546 A JP S57164546A JP 4926581 A JP4926581 A JP 4926581A JP 4926581 A JP4926581 A JP 4926581A JP S57164546 A JPS57164546 A JP S57164546A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- grid lines
- dividing
- region
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
PURPOSE:To prevent a semiconductor substrate from being warped by a method wherein grid lines for dividing are made of relatively thin oxide film and metal layers are formed along and adjacent to the grid lines on the semiconductor substrate and protective films are formed on the metal layers. CONSTITUTION:Field oxide layers 12 are formed on a semiconductor substrate 11 and on a region A which composes grid lines for dividing of the semiconductor substrate 11 relatively thin oxide film 13 is formed. And platinum silicide layers 14 are formed adjacent to and near the region A which composes the grid lines for dividing on the semiconductor substrate 11. The whole surface other than the grid lines region A is covered by phosphorus silicate glass protective film 15. With this constitution, the semiconductor substrate is prevented from being warped by thermal stress produced between masking oxide film and the semiconductor substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4926581A JPS57164546A (en) | 1981-04-03 | 1981-04-03 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4926581A JPS57164546A (en) | 1981-04-03 | 1981-04-03 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57164546A true JPS57164546A (en) | 1982-10-09 |
JPH0143458B2 JPH0143458B2 (en) | 1989-09-20 |
Family
ID=12825992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4926581A Granted JPS57164546A (en) | 1981-04-03 | 1981-04-03 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57164546A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121851A (en) * | 1982-12-28 | 1984-07-14 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6255941A (en) * | 1985-09-05 | 1987-03-11 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPH02116739U (en) * | 1990-02-28 | 1990-09-19 | ||
JPH02308551A (en) * | 1989-05-23 | 1990-12-21 | Nec Corp | Semiconductor wafer |
JP2012204568A (en) * | 2011-03-25 | 2012-10-22 | Sumitomo Electric Ind Ltd | Semiconductor device manufacturing method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS498165A (en) * | 1972-05-10 | 1974-01-24 | ||
JPS52122090A (en) * | 1976-04-06 | 1977-10-13 | Toshiba Corp | Semiconductor integrated circuit device |
JPS5457957A (en) * | 1977-10-18 | 1979-05-10 | Mitsubishi Electric Corp | Production of semiconductor device |
-
1981
- 1981-04-03 JP JP4926581A patent/JPS57164546A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS498165A (en) * | 1972-05-10 | 1974-01-24 | ||
JPS52122090A (en) * | 1976-04-06 | 1977-10-13 | Toshiba Corp | Semiconductor integrated circuit device |
JPS5457957A (en) * | 1977-10-18 | 1979-05-10 | Mitsubishi Electric Corp | Production of semiconductor device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121851A (en) * | 1982-12-28 | 1984-07-14 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH0342505B2 (en) * | 1982-12-28 | 1991-06-27 | ||
JPS6255941A (en) * | 1985-09-05 | 1987-03-11 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPH02308551A (en) * | 1989-05-23 | 1990-12-21 | Nec Corp | Semiconductor wafer |
JPH02116739U (en) * | 1990-02-28 | 1990-09-19 | ||
JP2012204568A (en) * | 2011-03-25 | 2012-10-22 | Sumitomo Electric Ind Ltd | Semiconductor device manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JPH0143458B2 (en) | 1989-09-20 |
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