JPS58111950A - Image forming member for electrophotography - Google Patents

Abstract

PURPOSE:To obtain a superior image forming member in an image forming member for electrophotography having a substrate, a barrier layer and a photoconductive layer consisting basically of amorphous silicon or germanium by contg. oxygen or nitrogen in the photoconductive layer. CONSTITUTION:In an image forming member for electrophotography having a substrate, a barrier layer and a photoconductive layer, the photoconductive layer is constituted of an amorphous semiconductor consisting basically of at least one of silicon or germanium and at least one of oxygen or nitrogen is contained therein. Then, the image forming member for electrophotography which is pollution-free, is highly resistant to heat, moisture, light fatigue and corona ions, does not cause deterioration phenomena on repetitive use, forms high quality picture images easily with high density, sharp halftones and high resolution, has high dark resistance and photosensitivity and has excellent abrasion resistance, cleanability and solvent resistance is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrophotographic imaging member used to form images using electromagnetic waves such as.

Conventionally, inorganic photoconductive materials such as Du, Ss, Ca8e ZnO, and poly-N vinylcarbazole (PVK) have been used as photoconductive materials constituting the photoconductive layer of electrophotographic image forming members.
,) Organic photoconductive materials (OPC') such as linitrofluorenone (TNF) are commonly used.

There are still various issues that can be solved in electrophotographic image forming members that use these photoconductive materials, and the conditions should be relaxed to a certain extent to suit individual circumstances. In practice, each suitable electrophotographic imaging member is used.

For example, in an electrophotographic image forming member using S as a photoconductive layer-forming material, S alone has a narrow spectral sensitivity range when using visible light, so To + As
It is planned to expand the spectral sensitivity range by adding .

Ryohei et al., such an electrophotographic image forming member having a Se-based photoconductive layer containing Te + As certainly improves the spectral sensitivity range, but because the optical fatigue is large, it is difficult to print the same original. Continuously copying may cause a decrease in the density of the copied image or stains on the background (fogging of the white background), and if you continue to copy other manuscripts, the image of the previous manuscript may be copied as an afterimage. It has the disadvantage of being (ghost phenomenon) township.

However, since S., especially KAstTe, is an extremely harmful substance to the human body, it is necessary to use manufacturing equipment that does not come into contact with the human body during manufacturing, and requires less capital for equipment. The drop is significantly large. Furthermore, if the photoconductive layer is exposed even after manufacturing, the surface of the photoconductive layer will be directly rubbed during cleaning and other treatments, and a portion of it will be scraped off. It can get mixed into the developer, or get mixed into copying machines, or get mixed in with copies of prints, and be scraped, resulting in them coming into contact with the human body. In addition, the 8e-based photoconductivity is
When the surface is repeatedly exposed to corona discharge many times in a row, crystallization or oxidation occurs near the surface of the layer, often leading to deterioration of the electrical properties of the photoconductive layer. Or,
Also, if the surface of the photoconductive layer is exposed, visualization of the electrostatic image (
When using a liquid developer, it is required to have excellent solvent resistance (liquid development resistance) since it comes into contact with the solvent. It is difficult to say that the system photoconductive layer is necessarily satisfactory.

In order to improve these points, the surface of the Be-based photoconductive layer was
It has been proposed that a surface coating layer called a so-called protective layer or an electrically insulating layer be used.

Regarding these improvements, both years et al. also focused on the adhesion and electrical contact between the photoconductive layer and the surface coating layer, as well as the electrical properties and surface properties required for the surface coating layer, as well as #'i, Since the S-based photoconductive layer is usually formed by vacuum evaporation,
This requires a significant investment in equipment, and in order to obtain a photoconductive layer with the desired photoconductive properties with good reproducibility, various changes in deposition temperature, deposition substrate temperature, degree of vacuum, and cooling rate must be made. Manufacturing parameters need to be tightly adjusted.

Furthermore, the surface coating layer is formed by bonding a film-like adhesive to the surface of the photoconductive layer, or by applying a surface nuclide layer forming material, so that the photoconductive layer is formed. It is necessary to install equipment other than the one used for this purpose, and there is a significant increase in capital investment, which is extremely unfavorable in the current period of slow economic growth.

In addition, in order to have a high dark resistance as a photoconductive layer of an electrophotographic image forming member, the S-based photoconductive layer is amorphous.
1, but since the crystallization of S occurs at a very low temperature of about 65°C, the ambient temperature during post-manufacturing handling, or during use or other factors during the image forming process. It also has a drawback in terms of heat resistance, in that it is susceptible to the frictional heat caused by the sliding 11 with the member, causing a crystallization phenomenon, which tends to cause a decrease in dark resistance.

On the other hand, in an electrophotographic imaging member using ZnO and Cd8 as photoconductive layer constituent materials, the photoconductive layer is made of ZnO.
It is formed by uniformly dispersing photoconductive material particles of CdS or CdS in a suitable resin binder. This image-forming member having a so-called binder-based photoconductive layer is advantageous in manufacturing compared to an image-forming member having a Se-based photoconductive layer, and the manufacturing cost can be relatively reduced. That is, the binder-based photoconductive layer is prepared by applying a coating solution prepared by kneading ZnO or C'dS particles and a suitable resin binder using a suitable solvent onto a suitable substrate using a doctor blade method. It can be formed by simply applying it using a coating method such as a dipping method and then solidifying it, so compared to an image forming member having a Be-based photoconductive layer, there is no need to invest as much capital in manufacturing equipment. The manufacturing method itself is simple and easy.

Both years et al., the binder-based photoconductive layer is basically a two-component system consisting of a photoconductive material and a resin binder, and the photoconductive material particles are uniformly dispersed in the resin binder. Due to the specificity that has to be formed, there are many parameters that determine the electrical and photoconductive properties as well as the physicochemical properties of the photoconductive layer, and therefore these parameters must be strictly controlled [1! j
If the photoconductive layer is not properly adjusted, a photoconductive layer having desired characteristics cannot be formed with good reproducibility, resulting in a decrease in paper yield and a lack of mass productivity.

Furthermore, due to the unique nature of the binder-based photoconductive layer being a dispersed system, the entire layer is porous and has a sandy structure, so it is highly dependent on humidity, and when used in a humid atmosphere, the electrical properties deteriorate and high In many cases, it is no longer possible to obtain a high quality copy image.

In addition, the porous nature of the KFi photoconductive layer causes the developer to penetrate into the layer during development, resulting in poor mold release and cleaning properties, or the developer becomes unusable. The above-mentioned problem becomes significant because the particles penetrate into the interior of the photoconductive layer, and it becomes necessary to cover the surface of the photoconductive layer with a surface coating layer, as in the case of the Se-based photoconductive layer.

Ryohei et al., the improvement of providing this surface coating layer is also due to the unevenness of the surface of the photoconductive layer due to the porous nature of the photoconductive layer, and the interface is not uniform, resulting in poor adhesion between the photoconductive layer and the surface coating layer. Another disadvantage is that it is difficult to obtain good electrical contact.

In addition, when using CdS, since CdS itself has an effect on the human body, care must be taken during manufacturing and use to ensure that the material does not come into contact with the human body or scatter into the surrounding environment. It is necessary to When using ZnO,
Although it has almost no effect on the human body, ZnO binder-based photoconductive layers have drawbacks such as low photosensitivity, narrow spectral sensitivity range, significant optical fatigue, and poor photoresponsiveness, and have recently attracted attention. In an electrophotographic image forming member using an organic photoconductive material such as PVK and TNF, the organic photoconductive material such as PVK or TNF is coated on a suitable support such as polyethylene terephthalate whose surface is conductively treated. This method has the advantage in manufacturing that a photoconductive layer can be formed simply by forming a coating film, and the advantage that an electrophotographic image forming member with excellent flexibility can be manufactured, but on the other hand, It lacks moisture resistance, corona ion resistance, and cleanability, and has drawbacks such as low photosensitivity, and a narrow spectral sensitivity range in the visible light region and biased toward short wavelengths, and has an extremely limited range. It is only used for this purpose. However, there is no guarantee that many of these organic photoconductive materials are completely harmless to the human body, as some are suspected of being carcinogenic or sexual substances.

As described above, good electrophotographic image forming members using photoconductive materials, which have been pointed out as materials for forming the photoconductive layer of electrophotographic image forming members, have both advantages and disadvantages, so to some extent, A photoconductive layer of an image forming member for electrophotography, which can provide an excellent nine-electron-atsushi-forming member that solves the above-mentioned problems by relaxing the manufacturing conditions and usage conditions to suit each application. As the material for forming this, the material of O-chin 3 is desired.

Examples of such materials that have recently been viewed as promising include amorphous silicon (hereinafter abbreviated as a-8i) and amorphous germanium (hereinafter abbreviated as a-Ge).

By the way, in the early stages of development, the a-8i film and the a-Go film exhibited various electrical and optical properties, as their structure was influenced by the manufacturing method and manufacturing conditions, and the reproducibility of the a-Go film varied. No, I have a big problem. For example, in the early stages, 9m
The -81 film contains a large amount of gate groups, and therefore its electrical properties and optical properties are greatly affected, so it has not received much attention as a research material for basic physical properties, and it has not received much attention as a research material for basic physical properties. It has not been developed.

Amphitheater et al., a-81K, which was thought to be impossible to control in amorphous, has attracted great interest ever since p-n junction was made for the first time in amorphous in early 1976. In addition to the fact that -n junctions can be obtained, extremely weak luminescence is observed in crystalline silicon (abbreviated as c-8i), and a -8i can be observed with high efficiency, so it is mainly used for applications in solar cells. Research and development capabilities are being poured into this area.

In this way, the a-8t films that have been reported so far could be developed for use in solar cells, and therefore, in terms of their electrical and optical properties, they are suitable for electrophotographic image forming members. The reality is that it cannot be used as a photoconductive layer. In other words, solar cells convert solar energy into electric current, so in order to efficiently extract a large amount of electric current, -a
-The bright resistance (resistance during electromagnetic wave irradiation) of the Si film must be kept below a certain level. On the other hand, an a-81 film whose dark resistance (resistance when not irradiated with electromagnetic waves) is too small is unable to draw a large current with high efficiency. From this point of view, for application to solar cells, the dark resistance of the %a-at film is l
OS~10aΩ/country is required.

Ryōsei et al., in this a-81 film with a dark resistance of 1 degree,
Even if it were attempted to be applied as it is as a photoconductive layer of an electrophotographic image forming member, the dark resistance is too low to be used at all in currently known electrophotographic methods. The same can be said about this dark resistance problem Id a -Ge K.

Furthermore, the material for forming the photoconductive layer of an electrophotographic image forming member is required to have a bright resistance that is approximately 2 to 41 N lower than the dark resistance.
In this respect, the conventional a-81 film and a-Ge film have a hardness of at most two digits, so it is difficult to use the conventional a-81 film or a-Ge film as a photoconductive layer in an electrophotographic image forming member. However, it cannot be a fully satisfactory photoconductive layer.

In addition, according to another report regarding a-8iHK, for example, the photoelectric gain (photocurrent per incident photo'i1) of an a-Si film with a dark resistance of 1010 is reduced; In this respect, the conventional a-Si film could not be used as a complete photoconductive layer of an electrophotographic image forming member as it was.

I! In addition, other requirements other than the above required for the photoconductive layer of an electrophotographic image forming member, such as electrostatic properties, corona ion resistance, solvent resistance, light fatigue resistance, moisture resistance, heat resistance,
In terms of wear resistance, cleaning properties, etc., it is a-8
Regarding 1 and a-Ge K, there are 6 and 9 total unknowns in the past.

The present invention has been made in view of the above-mentioned points, and is the result of intensive research and study on h-8i and a-Ge from the viewpoint of application to photoconductive layers of electrophotographic image forming members. Oxygen or/and nitrogen can be replaced with chemical modifiers (themlasll).
a-Si or/and a-Go s, which contains a-Si or/and a-Go s as a modifier)
- If the semiconductor layer is made of Si or/and a-Ge, it can not only be applied extremely effectively as a photoconductive layer of an electrophotographic image forming member, but also be used as a conventional photoconductive layer of an electrophotographic image forming member. This is based on the finding that it is superior in most respects compared to the previous version.

In the present invention, since the device can be easily made into a closed system during manufacturing, it is possible to avoid adverse effects on the human body, and once manufactured, when used,
It is non-polluting, has no effect on the human body, other living things, or the natural environment, has excellent heat resistance and moisture resistance, and has always stable electrophotographic characteristics, making it suitable for almost any usage environment. The main object of the present invention is to provide an electrophotographic image forming member that can be used in any environment without limitation, has excellent light fatigue resistance and corona ion resistance, and does not cause deterioration even after repeated use.

Another object of the present invention is to provide an electrophotographic image forming member that can easily produce high-quality images with high density, clear halftones, and high resolution.

Another object of the present invention is to have high dark resistance and light sensitivity;
We also provide an electrophotographic image forming member with a spectral sensitivity that covers almost the entire visible light range, a low dark decay rate, fast photoresponsiveness, and excellent abrasion resistance, cleaning properties, and solvent resistance. It is also about providing.

The intended object of the present invention is achieved by forming the photoconductive layer with an amorphous semiconductor (hereinafter abbreviated as a-semiconductor) using silicon or/and germanium as a base material and containing oxygen and/or nitrogen. .

The most typical structural example of the electrophotographic image forming member of the present invention is shown in FIGS. 1 and 2. The electrophotographic imaging member 1 shown in FIG. / and germanium as a matrix,
It is formed of an a-semiconductor containing oxygen and/or nitrogen as a chemical modifier.

When a photoconductive layer is formed by incorporating oxygen and/or nitrogen in the form of chemical modifiers into the a-semiconductor based on KSa 81 or/and a-G, as described above, a significant increase in dark resistance and a high Sensitivity can be increased, and a photoconductive layer can be formed that has extremely excellent electrophotographic properties that are as good as 4 times better than conventional S-based photoconductive layers. a-81 or/
In order to incorporate oxygen or/and nitrogen in the form of a chemical modifier into an a-semiconductor having a-G and a-G, for example, when forming a photoconductive layer by a glow discharge method, oxygen, nitrogen,
Oxide 1. , gas of compounds such as nitrides a-81 or/
A photoconductive layer may be formed by introducing the photoconductive layer into a deposition chamber whose interior can be reduced in pressure together with the raw material gas for forming a-G and aG, and causing glow discharge within the deposition chamber. For example, when forming a photoconductive layer by a sputtering method, the desired mixing ratio is set, for example, (81+5iO--(81+5isN+)
), sputtering can be performed by using a sputtering target made of a mixture of components such as A nitrogen-containing compound gas is introduced into the deposition chamber together with a sputtering gas such as ttfAr gas, and
Alternatively, the photoconductive layer may be formed by sputtering 711 using a target of (8i+G.).

In the present invention, the compound of nitrogen in oxygen that can be used is one that does not introduce unnecessary impurities into the photoconductive layer to be formed and that contains nitrogen in oxygen in the photoconductive layer. Contained in a form effective as a chemical modifier9. Most oxygen and nitrogen compounds can be used as long as they can be used. As such oxygen and nitrogen compounds, compounds that can be in a gaseous state at room temperature are preferably effective. .

For example, oxygen compounds include oxygen (oxygen, -carbon oxide,
Carbon dioxide, -nitric oxide, nitrogen dioxide.

As the nitrogen compound, a large number of compounds such as nitrogen (Nt), -nitrogen oxide, nitrogen dioxide, and ammonia are useful.

In the present invention, K in the photoconductive layer formed.

atomic fk, which must be determined appropriately depending on the needs, but in normal cases, 0.1 to 30 atomic fk
, 0.1 to 20 atmnie% s, optimally 0.2 to 15 atonie%.

In the present invention, the photoconductive layer composed of an a-semiconductor having Sl or/and Go as a matrix and containing oxygen and nitrogen as chemical modifiers is formed of one of the following types of a-semiconductors. Alternatively, at least two types are selected, and the different types are bonded to form a layer.

■all... Contains only the donor, or the donor and acceptor (acc@p)
t/r) and donor Oak! High m(Nd).

■pm! ...Contains only acceptor, or contains both donor and acceptor and has a high acceptor concentration (Na).

■Eye [...Na = Nd = 0 or,
Na=NdO.

The a-semiconductor layers of types 1 to 3 as layers constituting the photoconductive layer of the electrophotographic image forming member of the present invention can be formed by a glow discharge method, a reactive sputtering method, etc., as will be described in detail later. In some cases, n-type impurities or p-type impurities, or
Both impurities are formed. Formed by controlling the amount of doping into the a-semiconductor layer.

In this case, according to the findings from the experimental results of the present inventors,
By adjusting the concentration of impurities in the term to within the range of IQ111 to lQ''am-8, it is possible to convert a very strong I/%n lid (or a very strong p-type) a-semiconductor layer to a very strong p-type a-semiconductor layer. II (
Alternatively, an a-semiconductor layer of weak ζ type) can be formed.

The a-semiconductor layers of types (1) to (2) are formed by a glue discharge method, a sputtering method, an ion-in-blank method, a -Tsuyo method, an IOP method, a K-YF method, or the like. The manufacturing method in this town is selected and adopted as appropriate depending on factors such as manufacturing conditions, town, capital investment load, manufacturing scale, and electrophotographic characteristics desired for the image forming member to be manufactured. (a) The periodic table is used to introduce impurities into the semiconductor layer in order to control the electrophotographic properties of (1) to (2). The glow discharge method is preferably employed because of its advantages such as the ability to introduce impurities of the 1st group or the 5th group using a displacement lid.

Furthermore, in the present invention Kjl)%A, the a-semiconductor layer may be formed by using both the glow discharge method and the sputtering method in the same apparatus system. The a-semiconductor layer contains H so that the electrophotographic image forming member targeted by the present invention can be obtained. In this case, ``KH is contained in the a-semiconductor layer'' means [H is bonded with Si or G in a good state], ``H is ionized and incorporated into the layer.'' It means any one of the following states, or a combination of these states: "incorporated into the layer as rHl" or "incorporated into the layer as rHl". a-Inclusion of H in the semiconductor layer 5i2H@tGe
Compounds such as Ha are introduced in the form of ti Hz and then thermally decomposed,
Even if such compounds or H3 are decomposed by the method of glow discharge decomposition and incorporated into the a-semiconductor layer along with the growth of one layer, the amount of JL%/% can be reduced. It's stormy though.

The H content is one of the major factors that determines whether the formed image forming member can be applied in practice. or n1l
In the present invention, as an element for controlling K, the amount of H contained in the a-semiconductor layer is usually between 1 and 1, in order to make the image forming member formed sufficiently compatible with the K-wk. 40ato
mic-1 preferably 5-30 atoms
It is desirable that this is done. The theoretical basis for the reason why the H content in the a-semiconductor layer is limited to the above numerical range fi is currently unclear and remains in the realm of speculation.
From a number of experimental results, it has been found that when the H content is outside the above numerical range, for example, a
- Manufactured electrophotographic imaging members, which are extremely difficult to control to meet the requirements of semiconductor layers, have extremely low sensitivity to irradiated electromagnetic waves, and in some cases, the sensitivity is almost negligible. It is confirmed that the increase in carriers due to electromagnetic wave irradiation is small, and that it is a necessary condition that the H content is within the above numerical range. The inclusion of H in the a-semiconductor layer is, for example, in the glow discharge method, since the starting material for forming the a-semiconductor uses a hydride such as 5IH4e S1w mountain-GeHa, hydrogen such as SiL-81tHs-GeH4 is used. When the compound is decomposed and an a-semiconductor layer is formed, H is automatically contained in the layer, but in order to more efficiently incorporate KH into the layer, it is necessary to form an a-semiconductor layer. iVc to do
, KH and gas may be introduced into the apparatus system for performing glow discharge.

In the case of the sputtering method, St or Ge (or <St+a.) in an inert gas such as K rjAr or a mixed gas atmosphere based on these gases.

Furthermore, when performing sputtering using a target containing these oxygen and/or nitrogen compounds, H,
Either one person can use the gas or 8iH.

If silicon hydride gas such as Si, H, etc., germanium hydride gas such as GeH4 cicada, or gas such as B, H, . . . 'PkXs, etc., is introduced as impurity doping, it will be a storm.

To achieve the objectives of the present invention &- to control the amount of H contained in the semiconductor layer, the deposition substrate temperature or/and the starting material used to incorporate H into the production equipment system. It is best to control the amount introduced. Furthermore, after forming the a-semiconductor layer, a scissors layer may be activated and exposed to a dihydrogen atmosphere, and one method is to heat the a-semiconductor layer at a temperature below the crystallization temperature at this time. . Particularly, K is an effective means for improving the dark resistance of a semiconductor layer using a bulk heat treatment method. Also, by irradiating electromagnetic waves such as high-intensity light,
- A method of improving the dark resistance of a semiconductor layer is also an effective method.

The impurity doped into the a-semiconductor layer is 1
- Suitable K for making the semiconductor layer p-type include elements from group Ⅰ A of the periodic table, such as FiBe At, Gas In VIA elements, such as P.

Preferred examples include As, 8b, Bi, and the like.

The amount of these impurities contained in the a-semiconductor layer is p.
Since it is on the order of pm, it is not necessary to pay as much attention to its pollution properties as the main material constituting the photoconductive layer, but it is preferable to use materials that are as non-polluting as possible.From the perspective of the ζOS table, it is possible to form Considering the electrical and optical characteristics of the a-semiconductor layer, B, AII Pe 8b, etc. are optimal.

In addition to this, it is also possible to control the n-type by, for example, doping Li or the like into the interstitial layer by thermal diffusion or implantation.

The amount of impurity doped into the a-semiconductor layer is determined as appropriate depending on the desired electrical and optical properties, but
In the case of impurities in group m of the periodic table A, usually 104 to 1
0 atomic L preferably lO''@~10' at
In the case of omic fk, an impurity belonging to group ⅠA of the periodic table, it is usually 10' to 1 G-'' atomic IG, preferably 104 to 10' atomic %.

The method of doping these impurities into the a-semiconductor layer is as follows:
Each method differs depending on the manufacturing method employed when forming the a-semiconductor layer, and will be specifically explained in detail in the following description or examples.

In the electrophotographic imaging member shown in FIG. 1, the photoconductive layer 3 has a free surface, and the free surface is subjected to a charging process for forming a static image. In the forming member, a barrier layer is provided between the photoconductive layer 3 and the support 2 to prevent O carrier from being injected into the support 2 during the electrostatic image forming 0*0 charging process. is more preferable.

The material for forming the barrier layer that functions to prevent injection of carriers from the side of the support 2 may be selected as appropriate depending on the type of support selected and the electrical characteristics of the photoconductive layer to be formed. The appropriate one is used. Such barrier layer forming materials include, for example, Muhos, 810
．． 8102 Isorelated compounds, An, Ir, pt,
ph, Pdl Mofl metal.

The support 2 may be either electrically conductive or electrically insulating. Examples of the conductive support include d, stainless steel, and mu/
ecrsMe＊Mume Ire Nb＊ T@l VI
Examples include metals such as TLPt and Pd, and alloys thereof.

Films or sheets of synthetic resins such as lyacetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramics, paper, etc. are commonly used. It is desirable that at least one surface of these electrically insulating supports is subjected to a conductive treatment using a suitable KFI.

For example, if it is glass, In1O= * 81101
The surface is conductive treated with polyester, etc., or polyester
The surface is conductively treated by vacuum evaporation, electron beam evaporation, sputtering, etc., or by embedding treatment with the metal. The shape of the support may be any shape such as cylindrical, belt, plate, etc., and the shape is determined as desired; however, in the case of continuous high-speed copying,
It is desirable to have an endless belt shape or a cylindrical shape.

The thickness of the support is appropriately determined so that an image forming member of the desired shape can be formed, but if flexibility is required for the image forming member, it may be necessary to From the viewpoint of mechanical strength and handling of compost, it is usually set to 10 seconds or more. The image forming member 4 for electrophotography shown in FIG. 2 is composed of a support 5 and a photoconductive layer 6. A depletion layer 1 is formed.

K, which provides the depletion layer 7 in the photoconductive layer 6, makes the photoconductive layer 6
This is accomplished by selecting at least m types of the type Oa-semiconductors described above and forming layers in a state where different types are bonded.

That is, the depletion layer 7 is formed, for example, by first forming an Ill a-semiconductor layer with a predetermined thickness on the support 5 having desired surface characteristics, and then forming a vcpm layer on the iIII a-semiconductor layer. 1!1 by forming the a-semiconductor layer of
Formed as a junction between the 1-semiconductor layer and the pIla-semiconductor layer (hereinafter, the 1-semiconductor layer on the side of the support s with respect to the depletion layer 7 will be referred to as the inner layer 8, and the a-semiconductor layer on the free surface side will be referred to as the outer layer 9. ). The depletion layer 7 is a different type of a-
When the photoconductive layer 6 is formed so that the semiconductor layers are bonded, it is formed in the boundary transition region between the inner a-semiconductor layer and the outer a-semiconductor layer.

The depletion layer 7 is a layer that absorbs electromagnetic waves irradiated during an electromagnetic wave irradiation step, which is a step in the process of forming an electrostatic image on an electrophotographic image forming member, and generates mobile carriers. Has a function. Furthermore, in a steady state, the depletion layer 7 is depleted of free carriers, so it behaves as a so-called intrinsic semiconductor.

The imaging member shown in FIGS. 1 and 2 has a photoconductive layer having a free surface, but there is a surface on the surface of the photoconductive layer similar to that of certain conventional electrophotographic imaging members. Additionally, a surface coating layer such as a so-called protective layer or an electrically insulating layer may be provided.

An imaging member having such a surface coating layer is shown in FIG.

The imaging member 10 shown in FIG. It is not essentially different from the imaging member 1 shown in the figures. The characteristics required for the surface coating layer 1.3 differ depending on the electrophotographic process to which it is applied. That is, for example, if an electrophotographic process such as the NP method described in Japanese Patent Publication No. 42-23910 and Publication No. 43-24748 is applied, the surface coating layer 13 should be electrically insulating. The material that undergoes the charging process is required to have sufficient electrostatic charge retention ability and to be thicker than a certain level. For example, if an electrophotographic process such as a Carlson process is used, Since it is desirable that the potential of the bright area after electrostatic image formation is very small, the thickness of the surface coating layer 13 is required to be very thin. The surface coating layer 13 satisfies the desired electrical properties (DK, in addition, does not give a chemically or physically adverse effect on the photoconductive layer 12, and has good electrical contact with the leading conductive layer 12). It is formed in consideration of adhesion, moisture resistance, abrasion resistance, cleanability, etc.

Typical materials effectively used for forming the surface coating layer 13 include polyethylene terephthalate, polycarbonate, polypropylene, polyvinyl chloride, polyvinylitine chloride, polyvinyl alcohol, polystyrene, polyamide, polytetrafluoroethylene, and polyethylene terephthalate. Ethylene trifluoride chloride, polyvinyl fluoride, polyvinylidene fluoride, propylene hexafluoride-ethylene tetrafluoride polymer, ethylene trifluoride-vinylidene fluoride-polymer, bolybdenum,
Examples include synthetic resins such as polyvinyl butyral and polyurethane, and cellulose derivatives such as diacetate and triacetate. These synthetic resins or cellulose derivatives may be made into a film and laminated onto the photoconductive layer 12, or a coating liquid thereof may be formed and applied onto the photoconductive layer 12, A layer may be formed.

The layer thickness of the surface coating layer 13 is appropriately determined depending on the desired characteristics and the material used, but is usually about 0.5 to 70 μm. In particular, when the K11li cover layer 13 is required to function as the above-mentioned protective layer, it is usually 10 seconds or less, and conversely, when it is required to function as an electrical insulating layer, it is usually If lOμ
This is considered to be the above. The layer thickness value that distinguishes between the protective layer and the electrically insulating layer varies depending on the materials used, the applied electrophotographic process, and the structure of the image forming member designed. Values are not absolute.

Furthermore, if this surface coating layer 13 is also given the role of an antireflection layer as described above, its function will be further expanded and it will become more effective.

Implementation #11〉 Completely shielded clean room with sail equipment 1
Using the apparatus shown in Figure 14, create an electrophotographic image forming II# by the following fibrillation operation.

Ql Rhinoceros ink-xO aluminum ζ plate whose surface can be cleaned (
The substrate 11 is placed on the support stand 14 and is fixed to the same foot member 18 which is placed in a predetermined position within the green discharge deposition 11. The substrate 51 is heated within the fixing member 18.
-19±@, warmed at 5°C osIIll. The temperature is measured directly on the back side of the board using a thermocouple (Alumel-Camital)! 2Il:ii was selected to be eliminated. Next, after confirming that the 0 edible pulp in the system is closed, the main pulp 22 is fully opened, and the inside of @15 is exhausted.
The vacuum level should be approximately 5 x 10' torr. That li
Increase the input voltage of the heater 19, change the input voltage while detecting the substrate temperature, and stabilize it until it reaches a constant value of 400C.

After that, auxiliary pulp 24, then outflow pulp 4JI,
4&and inflow pulp! ? , ! Complete II, 7
The insides of the 0-meters ai and is were also sufficiently degassed and vacuumed. Auxiliary pulp24. Pulp 43, 45.

87. After closing 39, silane gas (purity $199・X
) Put the pulp 4 in the cylinder, adjust the pressure on the mouth pressure gauge sb to 1 to /-, and gradually thin the weft pulp 31 until it reaches 5 μm. Subsequently, gradually turn on the #l output pulp 4a, and gradually turn on the auxiliary pulp 24 with ')--! ! 1, Villany gauge 2a
Adjust the opening of the auxiliary pulp 24 while paying close attention to the
The auxiliary pulp 24 was turned on until the inside of the tank reached I
Close the aperture until I torr K. The internal pressure becomes stable. t-confirm, followed by ammonia gas (purity 1199.
999 N) Hon 27 OAhp 51t va
* Adjust the output pressure gauge & 70 pressure t1-/-, and gradually introduce the inflow pulp 39 KM 70-Me-INBIIC7 ammonia gas, then the output pulp 4It gradually -1, Fuu-me *ai.

The reading is the flow rate of silane gas! 5l GK & Rusama Km Determine the opening of the pulp 45 and stabilize it 90 High frequency power source 20
Turn on the switch and add 5M to @ conductive coil 21.
Turn on 1-h of high-frequency power.

A glow discharge was generated in the coil S (s above the tank) in the tank 15, and a ga-semiconductor layer was grown on the substrate under 90 conditions with an input power of 30 W, and the same conditions were maintained for 10 hours. Turn off the high frequency electric current $120 and stop the discharge.Subsequently, turn off the power to the heating heater 19.
ff.

Wait for the substrate temperature to reach 100℃, then add auxiliary pulp 2.
4. The outflow pulp 43 and 45 were closed, and the main pulp 22 was made all the same, and the inside of the tank was made below 1O1 orr.The main pulp 22 was closed, and the inside of the tank LS was set to atmospheric pressure by the leak pulp 16, and a 1-semiconductor layer was formed. In this case, the total thickness of the fta-semiconductor layer formed was about 20 microns.

The image forming member thus obtained was placed in a charging exposure experimental device, and charged at 96 KV for 0.2 seconds.
A light image was immediately irradiated. The light image was irradiated using a tungsten light II #It, and the amount of acO light was irradiated through a test chart on a transmission plate.

7 - Immediately create a good toner image on the surface of the imaging member by cascading a Φ chargeable Om imager (containing toner and carrier) onto the surface of the member. The toner image on the member was transferred onto a transfer paper using +5KV corona charging, and a clear image with excellent resolution and high reproducibility was obtained.

Furthermore, the same apparatus was operated in the same manner to change the mixing ratio of the additive gas. For a constant silane gas flow rate, change the 7mm product agus fILiIk at the following (t) value to improve O*V
The Qiiiia1gItk values were compared and the tF values were determined by performing t-photo and m-image operations under the same conditions.

The results are shown in Table 1.

Table 1 tff14 base: ◎...Excellent Q...Refreshing Δ...Practical town Let's do the same evaluation Maruyukan 1 &! Shown below.

2 Evaluation criteria are the same as Table 1.00 in Table 2 indicates 400Ct)fib treatment in nitrogen 1g1i
This is an evaluation after hours, and in an image forming member in which an a-semiconductor layer is formed at a low temperature and plate temperature, the sharpness can be improved by JIK.

Implementation Ml> Installed in a completely shielded talen room 91
Using the apparatus shown in FIG. 14, an electrophotographic image forming member was produced by the following operations.

Q, whose surface has been cleaned, is placed in a predetermined position in the glow discharge deposition tank 15 placed on the support stand 14 & fixed to the fixing member 18. Fixed. The substrate 17 is heated with an accuracy of ±0.5° C. by the heater 111 in the fixed part #58. The temperature was kept constant directly on the backside of the substrate by a thermocouple (Plumeruc Calomel). Next, after confirming that all the valves in the system are closed, the main pulp 22 is fully opened, and the inside of the cypress 15 is evacuated.
The vacuum level was set to orr. Thereafter, the input voltage to the heater 19 (2) was increased, and while the temperature of the ram substrate was being detected by Al, the input voltage was varied until it reached a constant value K of 400C.

After that, the auxiliary pulp 841C and the outflow pulp 48.4
6 and inflow A (Lube 37, 4G is turned on, 70-meter 31.34 is also in a state of hazy state. Auxiliary pulp 24,) (Lube 4s.

After closing 46.37.40, silane gas (purity 9L9
99N) A valve 4I was placed in the nook of the cylinder 25, the pressure of the outlet pressure gauge 55 was adjusted to lkl/-, and the inflow pulp 37 was gradually opened to allow 70 meters of heshin gas to flow in. Successively, gradually open the outflow pulp 43, then gradually open the auxiliary Hhl' loop 24, and open the Villany gauge 2.
80 @ Adjust the auxiliary pulp 24 (D opening) while watching carefully so that the inside of the tank is I
(auxiliary until the lubricant 24 is turned on, and the pressure inside the tank is stabilized, then gradually close the main pulp 21!) and the Villany gauge!
The opening was narrowed down in the trench where II indicated 0.5 torr. Confirm that the internal pressure is stabilized, then open the carbon dioxide gas (purity 99.999N) cylinder 280 valve s3, adjust the pressure of the outlet pressure gauge 58 to 1 to /-, and gradually open the inflow pulp 40t. Let carbon dioxide flow into Flowme-714**, #l output I (k gradually fight 4・, 7a
- No 1840m fist, Silangus “oIILtoo,”
Set the outflow valve 46Ol 1 port on the ix hole, stabilize it, set the high frequency carpet 11200 switch to ・1 state ■, - conductive coil! At t, the high-frequency power of Schim is input, and a discharge is generated inside the IO coil in the tank (at the top of the tank), which is taken as the input power, and a-
Grow the semiconductor layer and keep the open condition 1 for s time.
Stop the discharge. Turn off the heating heater and wait for the substrate temperature 11 to reach 10°C, then close the auxiliary pulp 24 and the output pulps 48 and 46.
Main pulp 2! ! 10"-"t inside the tank.
After reducing the pressure to below orr, the main pulp 3 is closed and the inside of the chamber is set to atmospheric pressure by the Rita pulp 16, and the a-conductor l
IA was formed and nine groups were formed. In this case, the total thickness of the a-semiconductor layer that could be formed was approximately IJIμ.

The round image forming member thus obtained was transferred to the charging exposure experimental apparatus Kl.
1, then 0.2 Koseki corona charging was performed using (d@KV), and a light image was immediately irradiated. The light image turned tan.

Immediately thereafter, a good toner iki image was obtained on the imaging Il# surface by cascading the e-chargeable m imager (containing toner and carrier) into the imaging station @Kokaku. When the toner image on the image forming member was transferred onto transfer paper using +5KV corona charging, it had excellent resolution and a gradation of PIiI.
A very clear image of A1111 degrees was obtained.

Implementation 3> Using the apparatus shown in FIG. 4 equipped with KI equipment in a completely shielded clean room, attach an electrophotographic image forming member by the following operations.

17 tons of surface-cleaned 0, 2-5 steel Shie. The board 11 is 0.11E in the fixed part #18.
It is heated at 9 degrees (±0.61 CC) by the I-thermal heater 19. By Wen IE Hiro, 1 Electron (Alumel-Calomel)! The IEa picture is set to 5 & is rounded. Next, after confirming that all the pulp in the system is closed, the main valve is completely closed, and the side is evacuated to about 8 x 10 torr with an O vacuum gauge. After that, the input terminal of the heater 1940 is raised, and the input voltage is changed while detecting the fluorinium substrate tit.
Stabilize until oc reaches a constant value.

Sop Ki 1 Sodesuke valve = 4, then outflow pulp 44.46
and fully open the inflow pulp 38.40, 7a-meter 8
! ,! i4hei should also be given enough persuasion vacuum state ssc. Auxiliary A
k 7' 24, Pub 44, 46v After closing Hatake 2, 34, German gas (purity 119.99 x) cylinder 2
6, and check the positive pressure gauge sto pressure i 1
Apply 1 to KLI/-, gradually remove the inflow pulp 3111, and let the Gourmand enter the 70-meter 3 snow.
Gradually open the auxiliary pulp 24 and set the Birani gauge 28t) 1
1111. Adjust the opening of the auxiliary pulp 24 while watching the fist, and open the auxiliary pulp 24 in a circle until the inside of the tank reaches I , the opening was narrowed until the Pirani gauge 280 indicated 0.5 torr. After confirming that the internal pressure was stabilized, carbon dioxide (M degree 99.99
N) Open the pulp 5 of the cylinder 28, open the ttso pressure cage 580 pressure t111/jK111111EL, gradually open the inflow pulp 40, let carbon dioxide flow into the flow meter 34, and then gradually open the outflow pulp 46 to increase the flow rate. The meter 344D trajectory determines and stabilizes the opening of the outflow pulp 4-6 so that the flow rate of germane gas is 10XK. Next, turn on the switch of the high frequency electric power generator 120, apply 5 MHz high frequency power to the induction coil 21, generate a glow discharge inside the coil in the tank 16 (at the top of the tank), and change the input power of the aOW. did. A on the board outside of Kamijou
-Grow the semiconductor layer, maintain the 8 o'clock I4-condition for 9 layers, then set the AJII11#L to ff state and stop the glow discharge. Draw 1! Then, turn off the heating heater ISO power, wait until the board/board temperature reaches 10°C, and then turn on the auxiliary valve (34, Nagareyama valve 44.4).
After that, close the main pulp 22 and bring the inside of the tank IS to atmospheric pressure with the leak pulp l, and remove the substrate).
Demaru. In this case, the total thickness of the a-semiconductor layer formed may be about lI#.

The thus obtained nine-layer forming member is placed in a charging exposure experiment apparatus, and exposed to a corona zone for 0.1 sw at θ4iKV. Immediately thereafter, a chargeable combing agent (containing toner and carrier) is applied to the member surface mK cascade. As a result, a good toner image was obtained on both parts. Toner image on material +5K
When transferred onto a transfer paper using V corona charging, a clear image with excellent resolution and good developability was obtained.

Collection H4> Using the apparatus shown in the 5th WJ, produce an electrophotographic image forming member by the following operations.

Using a surface-cleaned 0.2 haze thickness 1.XIQawO aluminum plate as a substrate,
It has a built-in heater 64 and an electric thermocouple, and is fixed on the nine identification member 6s. A polycrystalline silicon plate (pure 11HIQ9111N) target 6 is placed on the electrode 6 facing the substrate 63.
s may be fixed parallel to the substrate 63 and facing each other at a distance of about 4 km.

1161, ti, main no.
×10-1torr True to Q degree! (At this point, all system O valves are closed), and the auxiliary valve 71 is closed.
and after the effluent pulp 87.88.81 is opened and degassed to 100%, the effluent pulp 87.88. $9 and auxiliary pulp 71 should be closed.

The heater power is input to board 2, and it is maintained at 5eec. (L te water * (711 degrees 99.991191
% > Pour 1 s of 180 pulp into the cylinder, and press the outlet pressure needle 7.
Adjust the outlet pressure to 1-/- by secret. Next, Ichitakijin Pulp S1 is gradually released, water bulk gas is allowed to flow into Flowme I-4, and then fIL outlet valve-1 is gradually turned to NI! Furthermore, an auxiliary valve 71 was provided.

41@10 While detecting the internal pressure with the pressure gauge 68, am pulp s'tvtws*! a x 10-'torr flow up to 9. Continue with argon (purity 99.999
Q 俤) Open the waste cylinder 730 pulp 76, adjust the outlet pressure needle ysoa to 1 (/-), then open the inflow pulp 8, then gradually open the outflow pulp S, and argon gas The outflow pulp 88 was gradually opened until the tank pressure gauge 680 indicated 5x1o-'$orr, and after the flow rate became stable, the main pulp 61 was gradually opened. The aperture is narrowed until the internal pressure of the tank reaches I
) Nerve the pulp 77 in the cylinder 74 and check the outlet pressure gauge 5et.
Adjust the inflow pulp 83tE to noodle/- and gradually open the outflow pulp 89. From the flow meter 86O reading, the water volume gas 7O-meter 84 () indicates the flow rate oIIJsue decrease and the l1cl outflow pulp 89 is opened. It was adjusted. After confirming that the flow meters 84, 85, and 86 are stable, turn the high frequency power supply 70 into the - state, and! - 13.56MH*, 500W between the get 65 and the fixed member 6s,
1.6KVO AC power was input. Under these conditions, a layer can be formed while maintaining stable discharge for 9 hours, and a layer can be formed while discharging in the ζO manner for 8 hours.Then, the high frequency power source 70 is turned off, and the heating heater 640 is powered on. was also turned off. Wait for the substrate temperature to drop below 10°C, then open the outflow valve.

Close 89, 11111 hull 7'71tffiji-kl
l, Fully open the main valve 67 and reduce the O gas in the tank to #L%/
Nie.

Thereafter, the main pulp 67 is closed and the leak pulp 69 is opened to leak to atmospheric pressure, and then the a-semiconductor layer O is formed and the nine substrates 3131 are taken out.

The ζO field can be formed with a semiconductor layer thickness of 1 mm and 18#.

ζ When the thus obtained round image 11 material was tested in the same manner as in Experimental Tsuba 1, it was found that the resolution, gradation, and image quality were ＠I was able to get excellent images with both Arashi.

An electrophotographic image forming member was prepared using the apparatus shown in No. 5WjA and the following operations.

The surface is cleaned and a round & 2 inch thick 10XI@ago aluminum plate is used as a substrate, and an O heating heater 64 and an electric thermocouple are built in and fixed in the sputtering vapor deposition tank 61.
Fixed on top. Opposite the board I83, on top of Kyuden &6, there is a silicon 11 wheel (!11 degrees (#1 [*e.99.,)
2 parts by weight were mixed together and then hot pressed and fixed in parallel with the target m5-is substrate 68 at a distance of about 41 et:m and inwardly into a circle.

Once inside the tank 4Il, the main pulp 67 is fully opened! I
The vacuum is evacuated to a lift of
1j? After the outflow pulp 87.8111 is thoroughly degassed, the outflow pulp sy, ms and the auxiliary pulp 71
was closed.

The substrate 62 is heated to 200 C by inputting the heating heater power.
Wc keep it. and hydrogen (purity 99.99995 j
l) Pour the pulp 7s from the cylinder 12 and press the outlet pressure needle 711.
Set the outlet pressure to 1~/- by wI41I,
The inflow pulp 81 is gradually opened to allow water bulk gas to flow into the 70-me-784, and then the outflow pulp 81 is gradually opened and the auxiliary pulp 71tjJ! there was.

While detecting the internal pressure of the tank 65 with the pressure needle 611, adjust the outflow pulp 87 to allow it to flow in to 5 X I F"torr.
11.9111Hjl) Barb 76 of gas pump 7s
Open the hole K1 and the reading of the outlet pressure needle 79 becomes 1 fine/-.
1lill was covered, 9 bales were opened, 82 inflow pulps were opened, and unified #11! The outlet pulp 88 is gradually opened to allow argon gas to flow into it. The indication of the internal pressure needle 67 is 5
The f11m pulp 88 is gradually opened until the pressure reaches 10-'torr, and after the flow rate is stabilized in the ζO state, the main pulp 61 is gradually closed, and the tank internal pressure becomes IXI@=t.
@rt The aperture was narrowed down to K. After confirming that the gas flow rate and tank internal pressure are stable, turn on the high frequency power supply 7.
Condition liK shi, target @ s and fixed lji material 6 materials 3 intervals Li @ seed 6oow -i, 6 K
AC power of V may be input. A layer was formed without matching so that stable discharge could continue under these conditions. After 10 hours of discharge in this manner, a layer is formed, and then the high frequency power source 7 is turned off, and the power source of the heating tank 64 is also turned off. Wait for the substrate temperature to drop below 100C, close the #l outlet valves 87 and 88, close the auxiliary pulp 71 for 9 bales, and fully open the main pulp 61 to evacuate the gas in the tank. Thereafter, the main pulp 67 is closed and the leak pulp 6914 is leaked to atmospheric pressure, and then the substrate on which the semiconductor layer has been formed is taken out.

In this case, the formed Marugame-semiconductor layer 0S-a Hiro, 20μ
So six nine.

The thus obtained image-forming member was tested in the same manner as in Example 1, and it was found that in the case of a combination of a 66 KV corona-chargeable developer, an image with excellent resolution, gradation, and image density was obtained. It's rare.

<Execution disease 6> 0.2■ thickness as a board! *After cleaning the molybdenum substrate of Xim, it was placed in a tank in the same manner as in the implementation M1. Subsequently, the inside of the glow discharge 4115 is made into a vacuum by the same operation as in execution N1, and the substrate temperature is maintained at 400°C. After that, silane gas and ammonia gas (silane A flow rate of 5 ~) was flowed, and the inside of the tank was set at 0.8 torr.At this time, phosphine gas was further passed through the pulp ss from the sphine gas cylinder 29 so that the silane gas was 0.61N.
IK#/- gas pressure (output pressure gauge s*ovit fist)
7a by adjusting the inflow pulp 41 and outflow valve 41.
-/- From fi3sO1l, silane gas and ammonia gas were combined to flow into 1iPi.

The gas inflow volume is stable and the tank internal pressure is constant), - the plate temperature is 40
After stabilizing at 0°C, KjIIIjI as in Example 5.
The flIL power supply 20 was set to the .n state, and /a- discharge was started. Under these conditions, after acclimatizing the glow discharge for 6 hours, turn off the high waste wave electric field*20 to stop the glow discharge. After that, the outflow pulp 4 a m 4 S t
Close 41, auxiliary pulp 24, main pulp 2 snow all 1
1K, the tank was evacuated with 5XIG'''-@torr j. After that, the auxiliary pulp 24 and the main pulp 2s were closed, the outflow pulps 4s and 4it were gradually opened, and the auxiliary valve 24 and the main pulp 22 were opened as described above. When the nine layers are formed, tie the pulp 54 of the Okajishira 30 1. Outlet pressure gauge 60
011 Pressure t1114/aiKm411L, the inflow pulp 42 was gradually turned off, and diborane gas was allowed to flow into the flow no. 36. Gradually pour out the pulp 48 into the tank so that the reading on the meter 8 becomes the silane gas O flow rate OO, 02K, and then pour the silane gas and ammonia gas into the tank. Wait for the flow rate to stabilize as the flow rate increases.

Subsequently, the high frequency power source 20 is again set in one shape,
``Start the glow discharge, and under these conditions, the glow discharge continues for 45 minutes.
After continuing for a minute, the heating heater 19 and the high frequency electric generator 11
Wait for the substrate temperature to reach $100C in the 2Qtoff state. After that, the auxiliary pulp 24, the outflow pulp 43,
Close 45,411, main pulp 2! After fully opening the tank 15 to bring the pressure inside the tank 15 below 1 to 1 torr, the main pulp 2s was closed, the tank 15 was brought to atmospheric pressure by the first valve 16, and the substrate was taken out. An imaging member was obtained by twisting. The thickness of the entire stratum formed was approximately 15 gc.

The nine image forming members thus obtained were placed in an electrostatic exposure experimental apparatus in the same manner as in Example v41, and an image forming test was conducted.
In the case of a combination of -6 KV corona charging and a chargeable developer, a very good quality 01 high contrast toner image was produced on the transfer paper.

<vsmst> Table WjJ is cleaned and 90.1-thick oht board (4 x 4
m+) was placed on the apparatus O identification m material 1$ shown in FIG. Subsequently, the interior of the p-discharge vapor deposition tank 15 and the entire gas inflow system were heated by 5X using the same SO operation as the Ml.
I Q-@1Orr OA! ! Tonashi, aenoki iimt
Silane gas and ammonia gas (silane flow rate sX) were flowed into the shell 18 using the same pulp operation as in 1IJ111Kai1, and the tank internal pressure was 0.8*o.
rr K be done.

]! ! Open the pulp 54 of the diborane female cylinder 30,
Adjust the outlet pressure gauge 60 pressure to 1-/- and inflow pulp 42
is gradually opened, and the outflow pulp 48 is also gradually opened to allow diborane gas to flow in so that the reading on the full meter 36 becomes the silane gas flow rate o, osx. After the flow rates of silane gas, ammonia gas, and diborane gas have stabilized, and the substrate temperature has stabilized at 4jOC, the high frequency electric
Start a glow discharge in the tank 15 as an island. After performing p-discharge for 1 s under these conditions, while continuing glow discharge, the diborane Nagareyama pulp 48 was carefully monitored with the flow meter 3, and the diborane gas was gradually adjusted to the silane gas flow rate. Squeeze the opening with ★ for a flow rate of 0.0IXK.

After continuing the glue discharge for a further ts time under the ζO condition, the high frequency power supply was turned off to stop the glow sound, and then the heating heater 19 was turned off and the temperature of one plate was 100t.
l: Wait until the auxiliary valve 24. Leaked Ah pu 4
1.4S, 48 both Elljib, main pulp 2211
After the X is fully opened and the pressure is reduced to below 1 G-"torr, the main pulp 22 is closed, and the leak valve 16t is closed.
After returning the inside of So 15 to atmospheric pressure, remove the board.

The total thickness of the nine layers formed can be about 16#.

The sample obtained in this way is
Brush with adhesive tape and then pull up the polycarbonate resin oso% toluene S* in one go &-1ii
Provide a layer of electric liquor Vto-ichi resin on the i layer. Then the adhesive tape can be removed.

The obtained circle, fa-formed ll# was transferred to a commercially available copying machine (NP-L
The drum (photosensitive layer otk-mt)'2m) of an experimental machine modified from Canon Co., Ltd.) K is constant so that it is grounded, 07KV primary charging, exposure simultaneous mC@KV charging, development (
By using a chargeable housing, a χ II imager (roller aperture), and a transfer e5KV charger, a bright image contrast (0*%/h) can be obtained on plain paper. Also ζO plant〈〈
Even after copying over 100,000 copies, the original high-quality image is maintained.

[Brief explanation of the drawing]

Figure 11, Figure 1, and Figure S are schematic diagrams each showing one cylinder of an apparatus for manufacturing the image forming member for child photographs of the present invention. 1.4.10 - Electrophotographic image forming member, 1,
II, 11---Support, 3, @, 11
----- Photoconductive layer, 13...Surface coating layer, 1
! I, @1... Evaporation equipment, 11... Substrate, 18.63...- Chamber member, 19...
Heater, 20,70...High frequency electric wire! 5.
! 6, 27, 28. H1,3@, 71m, 78. ? 4.
... Gas cylinder applicant Canon Co., Ltd.

Claims (1)

[Claims] For electrophotography, comprising a support, a barrier layer, and a photoconductive layer composed of an amorphous semiconductor having at least one of silicon and germanium O as a base material, and containing oxygen and/or nitrogen. Imaging member.