JPS56156836A - Electrophotographic receptor - Google Patents

Electrophotographic receptor

Info

Publication number
JPS56156836A
JPS56156836A JP6211380A JP6211380A JPS56156836A JP S56156836 A JPS56156836 A JP S56156836A JP 6211380 A JP6211380 A JP 6211380A JP 6211380 A JP6211380 A JP 6211380A JP S56156836 A JPS56156836 A JP S56156836A
Authority
JP
Japan
Prior art keywords
oxygen
atomic
hydrogen
amorphous silicon
receptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6211380A
Other languages
Japanese (ja)
Inventor
Takao Kawamura
Masazumi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Priority to JP6211380A priority Critical patent/JPS56156836A/en
Priority to DE19813117035 priority patent/DE3117035A1/en
Publication of JPS56156836A publication Critical patent/JPS56156836A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To provide photosensitivity to an amorphous silicon receptor at both positive and negative polarities and increase the dark volume resistivity by adding oxygen, hydrogen and an impurity selected from the IIIb group of the periodic table to the receptor. CONSTITUTION:Amorphous silicon formed by a glow discharge decomposition method and contg. about 5 10<-2>-10<-5>atomic% oxygen, about 10-40atomic% hydrogen and an about 200-20,000ppm impurity selected from the IIIb group of the periodic table, especially boron is used as a photoconductor layer. When hydrogen is added as a carrier gas for SiH4, it combines with a dangling bond to enable to control the electrical conductivity, yet the dark resistivity is low. By further adding oxygen, the dark resistivity is enhanced remarkably. Since a higher oxygen content deteriorates the photoconductivity, oxygen is added in said range. In the figure, A, B and C show the characteristics of amorphous silicon contg. no oxygen, 10<-5>atomic% oxygen and 10<-2>atomic% oxygen, respectively.
JP6211380A 1980-05-08 1980-05-08 Electrophotographic receptor Pending JPS56156836A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6211380A JPS56156836A (en) 1980-05-08 1980-05-08 Electrophotographic receptor
DE19813117035 DE3117035A1 (en) 1980-05-08 1981-04-29 Electrophotographic, photosensitive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6211380A JPS56156836A (en) 1980-05-08 1980-05-08 Electrophotographic receptor

Publications (1)

Publication Number Publication Date
JPS56156836A true JPS56156836A (en) 1981-12-03

Family

ID=13190669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6211380A Pending JPS56156836A (en) 1980-05-08 1980-05-08 Electrophotographic receptor

Country Status (2)

Country Link
JP (1) JPS56156836A (en)
DE (1) DE3117035A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3303266A1 (en) * 1982-02-01 1983-08-11 Canon K.K., Tokyo PHOTO ELECTRICAL ELEMENT
DE3307573A1 (en) * 1982-03-04 1983-09-15 Canon K.K., Tokyo PHOTO-CONDUCTIVE RECORDING ELEMENT
US4666808A (en) * 1983-04-01 1987-05-19 Kyocera Corp. Amorphous silicon electrophotographic sensitive member
DE3717727A1 (en) * 1987-05-26 1988-12-08 Licentia Gmbh ELECTROPHOTOGRAPHIC RECORDING MATERIAL AND METHOD FOR THE PRODUCTION THEREOF

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145539A (en) * 1978-05-04 1979-11-13 Canon Inc Electrophotographic image forming material
JPS5562111A (en) * 1978-11-02 1980-05-10 Ibiden Co Ltd Molten pig iron desulfurizing agent
JPS55127561A (en) * 1979-03-26 1980-10-02 Canon Inc Image forming member for electrophotography
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
DE3117037C2 (en) * 1980-05-08 1987-05-14 Takao Sakai Osaka Kawamura Electrophotographic recording material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145539A (en) * 1978-05-04 1979-11-13 Canon Inc Electrophotographic image forming material
JPS5562111A (en) * 1978-11-02 1980-05-10 Ibiden Co Ltd Molten pig iron desulfurizing agent
JPS55127561A (en) * 1979-03-26 1980-10-02 Canon Inc Image forming member for electrophotography
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element

Also Published As

Publication number Publication date
DE3117035A1 (en) 1982-02-25

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