JPS5758161A - Photoconductive member - Google Patents

Photoconductive member

Info

Publication number
JPS5758161A
JPS5758161A JP55134116A JP13411680A JPS5758161A JP S5758161 A JPS5758161 A JP S5758161A JP 55134116 A JP55134116 A JP 55134116A JP 13411680 A JP13411680 A JP 13411680A JP S5758161 A JPS5758161 A JP S5758161A
Authority
JP
Japan
Prior art keywords
layer
photoconductive
base
base material
nonphotoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55134116A
Other languages
Japanese (ja)
Other versions
JPS6341059B2 (en
Inventor
Isamu Shimizu
Shigeru Shirai
Hidekazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP55134116A priority Critical patent/JPS5758161A/en
Priority to US06/304,568 priority patent/US4394426A/en
Priority to GB8128841A priority patent/GB2087643B/en
Priority to AU75648/81A priority patent/AU554181B2/en
Priority to FR8118123A priority patent/FR2490839B1/en
Priority to NL8104426A priority patent/NL192142C/en
Priority to PCT/JP1981/000256 priority patent/WO1982001261A1/en
Priority to CA000386703A priority patent/CA1181628A/en
Priority to DE813152399A priority patent/DE3152399A1/en
Publication of JPS5758161A publication Critical patent/JPS5758161A/en
Publication of JPS6341059B2 publication Critical patent/JPS6341059B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To improve photoconductive charcteristics, durability, etc., by providing an intermediate layer on a base by using a nonphotoconductive anorphous material which uses Si and N as base material and contains halogen, and by forming a photoconductive layer of an amorphous silicon material on it. CONSTITUTION:On a conductive base 101, nonphotoconductive intermediate layer 102 of an amorphous material[a-(SiXN1-X)Y:A1-Y where 0<X<1 and 0<Y<1] which uses Si and N as base material and contains halogen (A) is formed to 30- 1,000Angstrom thickness by a glow discharging method, etc. On the layer 102, a p, n or i type photoconductive layer 103 is formed by using an amorphous silicon material containing H. On the layer 103, an upper layer which uses Si as a base material and contain >1 kind of halogne and H is formed and on the upper layer, a surface coating layer are permitted to form. Thus, a photoconductive member is obtained which is superior in optical fatigue resistance, moisture resistance, etc., and high photosensitivity.
JP55134116A 1980-09-25 1980-09-25 Photoconductive member Granted JPS5758161A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP55134116A JPS5758161A (en) 1980-09-25 1980-09-25 Photoconductive member
US06/304,568 US4394426A (en) 1980-09-25 1981-09-22 Photoconductive member with α-Si(N) barrier layer
GB8128841A GB2087643B (en) 1980-09-25 1981-09-24 Photoconductive member
AU75648/81A AU554181B2 (en) 1980-09-25 1981-09-24 Photoconductive device
FR8118123A FR2490839B1 (en) 1980-09-25 1981-09-25 PHOTOCONDUCTIVE ELEMENT
NL8104426A NL192142C (en) 1980-09-25 1981-09-25 Photoconductive organ.
PCT/JP1981/000256 WO1982001261A1 (en) 1980-09-25 1981-09-25 Photoconductive member
CA000386703A CA1181628A (en) 1980-09-25 1981-09-25 Photoconductive member including non-photoconductive layer containing amorphous silicon matrix containing nitrogen
DE813152399A DE3152399A1 (en) 1980-09-25 1981-09-25 Photoconductive member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55134116A JPS5758161A (en) 1980-09-25 1980-09-25 Photoconductive member

Publications (2)

Publication Number Publication Date
JPS5758161A true JPS5758161A (en) 1982-04-07
JPS6341059B2 JPS6341059B2 (en) 1988-08-15

Family

ID=15120827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55134116A Granted JPS5758161A (en) 1980-09-25 1980-09-25 Photoconductive member

Country Status (1)

Country Link
JP (1) JPS5758161A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0160369A2 (en) 1984-03-12 1985-11-06 Canon Kabushiki Kaisha Light receiving member
EP0178915A2 (en) 1984-10-15 1986-04-23 Canon Kabushiki Kaisha Light-receiving member
JPS6187160A (en) * 1984-10-05 1986-05-02 Fuji Electric Co Ltd Electrophotographic sensitive body
EP0219353A2 (en) 1985-10-16 1987-04-22 Canon Kabushiki Kaisha Light receiving members
EP0220879A2 (en) 1985-10-17 1987-05-06 Canon Kabushiki Kaisha Light receiving members
EP0222568A2 (en) 1985-11-01 1987-05-20 Canon Kabushiki Kaisha Light receiving members
EP0223469A2 (en) 1985-11-02 1987-05-27 Canon Kabushiki Kaisha Light receiving members

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0160369A2 (en) 1984-03-12 1985-11-06 Canon Kabushiki Kaisha Light receiving member
JPS6187160A (en) * 1984-10-05 1986-05-02 Fuji Electric Co Ltd Electrophotographic sensitive body
JPH0511305B2 (en) * 1984-10-05 1993-02-15 Fuji Electric Co Ltd
EP0178915A2 (en) 1984-10-15 1986-04-23 Canon Kabushiki Kaisha Light-receiving member
EP0219353A2 (en) 1985-10-16 1987-04-22 Canon Kabushiki Kaisha Light receiving members
EP0220879A2 (en) 1985-10-17 1987-05-06 Canon Kabushiki Kaisha Light receiving members
EP0222568A2 (en) 1985-11-01 1987-05-20 Canon Kabushiki Kaisha Light receiving members
EP0223469A2 (en) 1985-11-02 1987-05-27 Canon Kabushiki Kaisha Light receiving members

Also Published As

Publication number Publication date
JPS6341059B2 (en) 1988-08-15

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