JPS57119359A - Photoconductive member - Google Patents

Photoconductive member

Info

Publication number
JPS57119359A
JPS57119359A JP56005527A JP552781A JPS57119359A JP S57119359 A JPS57119359 A JP S57119359A JP 56005527 A JP56005527 A JP 56005527A JP 552781 A JP552781 A JP 552781A JP S57119359 A JPS57119359 A JP S57119359A
Authority
JP
Japan
Prior art keywords
layer
concn
photoconductive
amorphous
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56005527A
Other languages
Japanese (ja)
Other versions
JPS6348057B2 (en
Inventor
Shigeru Shirai
Junichiro Kanbe
Tadaharu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56005527A priority Critical patent/JPS57119359A/en
Priority to US06/335,465 priority patent/US4490453A/en
Priority to GB8200779A priority patent/GB2095031B/en
Priority to DE19823201081 priority patent/DE3201081A1/en
Publication of JPS57119359A publication Critical patent/JPS57119359A/en
Publication of JPS6348057B2 publication Critical patent/JPS6348057B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To enhance the photoconductive characteristics, etc. of a photoconductive member by dispersing a specified amount of N in the photoconductive amorphous Si layer contg. H or halogen while distributing N at the maximum concn. at the surface of the electrically conductive support side or the surface of the opposite side, at lower concn. in the intermediate part and at uniform concn. in a direction parallel to the surface. CONSTITUTION:On an electrically conductive support 101 a barrier layer 102 having 30-1,000Angstrom thickness is formed with nonphotoconductive amorphous Si, insulating oxide or the like. On the layer 102 a photoconductive amorphous Si layer 103 contg. H or halogen is formed. The layer 103 contains 0.02-30 atomic % N as a whole and has 0.1-60 atomic% distribution peak at the side of the support 101 urface or a part close to the side. The N concn. of the intermediate region is gradually reduced from the side of the support surface, and N is distributed at uniform conc. in a direction parallel to the surface. A distribution peak may be provided to other surface 104 of the layer 103. Thus, a photoconductive member 100 suitable for all environments and having superior endurance, photosensitivity, etc. is obtd.
JP56005527A 1981-01-16 1981-01-16 Photoconductive member Granted JPS57119359A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56005527A JPS57119359A (en) 1981-01-16 1981-01-16 Photoconductive member
US06/335,465 US4490453A (en) 1981-01-16 1981-12-29 Photoconductive member of a-silicon with nitrogen
GB8200779A GB2095031B (en) 1981-01-16 1982-01-12 Amorphous semiconductor member
DE19823201081 DE3201081A1 (en) 1981-01-16 1982-01-15 PHOTO-CONDUCTIVE ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56005527A JPS57119359A (en) 1981-01-16 1981-01-16 Photoconductive member

Publications (2)

Publication Number Publication Date
JPS57119359A true JPS57119359A (en) 1982-07-24
JPS6348057B2 JPS6348057B2 (en) 1988-09-27

Family

ID=11613657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56005527A Granted JPS57119359A (en) 1981-01-16 1981-01-16 Photoconductive member

Country Status (1)

Country Link
JP (1) JPS57119359A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041046A (en) * 1983-08-16 1985-03-04 Kanegafuchi Chem Ind Co Ltd Electrophotographic sensitive body
JPS60154257A (en) * 1984-01-24 1985-08-13 Kyocera Corp Electrophotographic sensitive body
JPS60185957A (en) * 1984-03-05 1985-09-21 Sharp Corp Photoconductive material
JPS6123158A (en) * 1984-07-11 1986-01-31 Stanley Electric Co Ltd Photosensitive body for electrophotography
JPS62273549A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273568A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273553A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273559A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS632056A (en) * 1985-05-17 1988-01-07 Ricoh Co Ltd Electrophotographic sensitive body
JPS63178248A (en) * 1986-11-03 1988-07-22 ゼロックス コーポレーション Amorphous silicon image forming section having barier layer

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041046A (en) * 1983-08-16 1985-03-04 Kanegafuchi Chem Ind Co Ltd Electrophotographic sensitive body
JPH0426106B2 (en) * 1983-08-16 1992-05-06 Kanegafuchi Chemical Ind
JPS60154257A (en) * 1984-01-24 1985-08-13 Kyocera Corp Electrophotographic sensitive body
JPH0514901B2 (en) * 1984-01-24 1993-02-26 Kyosera Kk
JPS60185957A (en) * 1984-03-05 1985-09-21 Sharp Corp Photoconductive material
JPS6123158A (en) * 1984-07-11 1986-01-31 Stanley Electric Co Ltd Photosensitive body for electrophotography
JPH0514898B2 (en) * 1984-07-11 1993-02-26 Stanley Electric Co Ltd
JPS632056A (en) * 1985-05-17 1988-01-07 Ricoh Co Ltd Electrophotographic sensitive body
JPS62273553A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273559A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273568A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273549A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS63178248A (en) * 1986-11-03 1988-07-22 ゼロックス コーポレーション Amorphous silicon image forming section having barier layer

Also Published As

Publication number Publication date
JPS6348057B2 (en) 1988-09-27

Similar Documents

Publication Publication Date Title
JPS57119357A (en) Photoconductive member
JPS57119359A (en) Photoconductive member
JPS57119356A (en) Photoconductive member
CA2070026A1 (en) Light-receiving member
JPS57115556A (en) Photoconductive material
JPS56118374A (en) Semiconductor strain gauge
JPS5664347A (en) Electrophotographic receptor
JPS57119358A (en) Photoconductive member
JPS5752179A (en) Photoconductive member
JPS5738189A (en) Recording member
JPS5758160A (en) Photoconductive member
JPS5752178A (en) Photoconductive member
JPS57115554A (en) Photoconductive material
JPS5758161A (en) Photoconductive member
JPS5762053A (en) Photoconductive member
JPS5763545A (en) Photoconductive member
JPS6457755A (en) Thin-film semiconductor element
JPS57119360A (en) Photoconductive member
JPS57119362A (en) Photoconductive member
JPS56125881A (en) Optical semiconductor element
JPS57115555A (en) Photoconductive material
JPS53126875A (en) Gate protecting device
JPS5661175A (en) Thin-film solar cell
JPS57116347A (en) Photoconductive material
JPS5763546A (en) Photoconductive member