JPS57115557A - Photoconductive material - Google Patents

Photoconductive material

Info

Publication number
JPS57115557A
JPS57115557A JP56002274A JP227481A JPS57115557A JP S57115557 A JPS57115557 A JP S57115557A JP 56002274 A JP56002274 A JP 56002274A JP 227481 A JP227481 A JP 227481A JP S57115557 A JPS57115557 A JP S57115557A
Authority
JP
Japan
Prior art keywords
layer
photoconductive
type
oxygen
material containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56002274A
Other languages
Japanese (ja)
Other versions
JPS6410067B2 (en
Inventor
Shigeru Shirai
Junichiro Kanbe
Tadaharu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56002274A priority Critical patent/JPS57115557A/en
Priority to GB8132157A priority patent/GB2095030B/en
Priority to US06/316,552 priority patent/US4414319A/en
Priority to CA000389177A priority patent/CA1154289A/en
Priority to FR8120651A priority patent/FR2497604B1/en
Priority to DE19813143764 priority patent/DE3143764A1/en
Priority to AU77901/81A priority patent/AU548276B2/en
Publication of JPS57115557A publication Critical patent/JPS57115557A/en
Publication of JPS6410067B2 publication Critical patent/JPS6410067B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To enhance stability of photoconductivity characteristics against all the environmental conditions, durability, etc., by forming a photoconductive layer with an amorphous silicon containing oxygen and having its distribution higher in the upper and lower layers than in the middle layer, and uniform in each layer. CONSTITUTION:An amorphous nonphotoconductive barrier layer 102 is formed on a conductive substrate 101 in 3-100nm thickness with >=1 kind H and halogen, and a material containing carbon or a material containing N, and a material containing silicon by the sputtering or the like method. A photoconductive amorphous silicon layer 103 of p-type, n-type or i-type, or the like, containing >=1 kind H and halogen, and oxygen is formed on the layer 102. The oxygen distribution of the layer 103 is higher in a lower layer near the substrate 101 side and in an upper layer 106 near a surface 107 than in a middle layer 105, and it is uniform in each layer, thus permitting the photoconductive material obtained to be insusceptible of light fatigue, and enhanced in photosensitivity, durability, resolution, etc.
JP56002274A 1981-01-08 1981-01-09 Photoconductive material Granted JPS57115557A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP56002274A JPS57115557A (en) 1981-01-09 1981-01-09 Photoconductive material
GB8132157A GB2095030B (en) 1981-01-08 1981-10-26 Photoconductive member
US06/316,552 US4414319A (en) 1981-01-08 1981-10-29 Photoconductive member having amorphous layer containing oxygen
CA000389177A CA1154289A (en) 1981-01-08 1981-10-30 Photoconductive member including an amorphous layer of silicon matrix with hydrogen and/or halogen
FR8120651A FR2497604B1 (en) 1981-01-08 1981-11-04 PHOTOCONDUCTIVE ELEMENT
DE19813143764 DE3143764A1 (en) 1981-01-08 1981-11-04 PHOTO-CONDUCTIVE ELEMENT
AU77901/81A AU548276B2 (en) 1981-01-08 1981-11-26 Photoconductive member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56002274A JPS57115557A (en) 1981-01-09 1981-01-09 Photoconductive material

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP57077670A Division JPS5833258A (en) 1982-05-10 1982-05-10 Photoconductive member

Publications (2)

Publication Number Publication Date
JPS57115557A true JPS57115557A (en) 1982-07-19
JPS6410067B2 JPS6410067B2 (en) 1989-02-21

Family

ID=11524780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56002274A Granted JPS57115557A (en) 1981-01-08 1981-01-09 Photoconductive material

Country Status (1)

Country Link
JP (1) JPS57115557A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5962863A (en) * 1982-10-04 1984-04-10 Toshiba Corp Electrophotographic receptor
JPS60154521A (en) * 1984-01-23 1985-08-14 Semiconductor Energy Lab Co Ltd Manufacture of silicon carbide film
JPS60181602A (en) * 1984-01-30 1985-09-17 エヌ・ベー・フイリップス・フルーイランペンフアブリケン Thin-film strain gage device and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5962863A (en) * 1982-10-04 1984-04-10 Toshiba Corp Electrophotographic receptor
JPH0350264B2 (en) * 1982-10-04 1991-08-01 Tokyo Shibaura Electric Co
JPS60154521A (en) * 1984-01-23 1985-08-14 Semiconductor Energy Lab Co Ltd Manufacture of silicon carbide film
JPS60181602A (en) * 1984-01-30 1985-09-17 エヌ・ベー・フイリップス・フルーイランペンフアブリケン Thin-film strain gage device and manufacture thereof

Also Published As

Publication number Publication date
JPS6410067B2 (en) 1989-02-21

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