JPS5962863A - Electrophotographic receptor - Google Patents

Electrophotographic receptor

Info

Publication number
JPS5962863A
JPS5962863A JP17431982A JP17431982A JPS5962863A JP S5962863 A JPS5962863 A JP S5962863A JP 17431982 A JP17431982 A JP 17431982A JP 17431982 A JP17431982 A JP 17431982A JP S5962863 A JPS5962863 A JP S5962863A
Authority
JP
Japan
Prior art keywords
amorphous silicon
hydrogenated amorphous
film
silicon oxide
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17431982A
Other languages
Japanese (ja)
Other versions
JPH0350264B2 (en
Inventor
Hideji Yoshizawa
吉澤　秀二
Genichi Adachi
元一 安達
Masao Obara
小原　正生
Takeshi Matsuo
武 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17431982A priority Critical patent/JPS5962863A/en
Publication of JPS5962863A publication Critical patent/JPS5962863A/en
Publication of JPH0350264B2 publication Critical patent/JPH0350264B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain an electrophotographic receptor having excellent electrostatic charging characteristic, dark attenuation characteristic and photosensitive characteristic by forming the 1st and 2nd hydrogenated amorphous silicon oxide films by using the glow discharge of a gaseous mixture of oxygen and gas contg. silicon on a conductive substrate, and forming an intermediate hydrogenated amorphous silicon film by using the glow discharge of gas contg. silicon forming the 1st and 2nd hydrogenated amorphous silicon oxide films. CONSTITUTION:An Al drum substrate 13 is maintained at 250 deg.C in a chamber 2, and the gaseous mixture contg. >=0.5% oxygen based on flow rate with respect to gaseous silane and having 50SCCM flow rate of gaseous silane is converted to plasma by glow dischage, whereby the 1st hydrogenated amorphous silicon oxide film 19 is formed on the substrate 12. The inflow of only the oxygen is then stopped, and a hydrogenated amorphous silicon film 20 is formed on the film 19; thereafter, the 2nd hydrogenated amorphous silicon film 21 is formed on the film 20 under the same conditions as the initial conditions. The films 19, 21 have a function for blocking the injection of electric charge and the film 20 has a function of generating electric charge.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明はたとえば雷、子複写機や電子プリンタ等に用い
られる電子写真感光体に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an electrophotographic photoreceptor used in, for example, lightning, slave copying machines, electronic printers, and the like.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

アモルファスシリコン（ａ−８ｊ）は、主として太陽電
池などの半勇体応用技術において利用されつつあるが、
近年この種のアモルファスシリコンを重子写真技術に応
用する提案がｉされている。Amorphous silicon (a-8j) is mainly used in semi-solid application technologies such as solar cells, but
In recent years, proposals have been made to apply this type of amorphous silicon to photon photography technology.

これは、このＸ重アモルファスシリコンの面１摩耗性、
長波長光に対する感度特性から、複写機、ノンインパク
トプリンタ等における静電潜像相持体である電子写真感
光体の羽村としての有用性が認められていることによる
。This is the surface 1 abrasion of this X-heavy amorphous silicon,
Because of its sensitivity to long wavelength light, it has been recognized to be useful as an electrophotographic photoreceptor, which is an electrostatic latent image carrier in copiers, non-impact printers, etc.

ところで、このアモルファスシリコンを用いた電子写真
感光体は、導■テ性基板上に、ＳｉＨ４ガスのグロー数
箱分解によりアモルファスシリコン（ａ−８ｔ）膜を形
成してなる。しかし々がら、純Ｓ　ｉＨ４ガスを用いて
形成された水素化アモルファスシリコン（ａ−８ｔ；Ｈ
）膜は暗中での比抵抗が１０１１ｈ　と小さいため、電
子写真プロセス中の直流コロナ帯電を行なっても充分な
表面を位を保持することができない。By the way, an electrophotographic photoreceptor using this amorphous silicon is formed by forming an amorphous silicon (a-8t) film on a conductive substrate by glow number box decomposition of SiH4 gas. However, hydrogenated amorphous silicon (a-8t; H
) Since the specific resistance of the film in the dark is as small as 1011h, it is not possible to maintain a sufficient surface position even when DC corona charging is performed during the electrophotographic process.

そこで、アモルファスシリコン膜の大暗抵抗化を図るべ
く酸Ｉをドーｔングすることが考えられている。すなわ
ち、５ＩＨ４ガスと０２ガスの混合ガスを用いて形成さ
れた水素化アモルファスシリコン酸化膜（ａ−８ｔ：Ｃ
）ｐＨ膜）では、ｏ２濃度をコントロールすることにょ
シ暗中での抵抗を１０１３Ωｍ以上にすることができる
。ところが、同時に光照射時の抵抗が１ｏ１１Ω（１）
以上になってしまい、充分な光感度が得られないので電
子写真感光体用としては使用できない。Therefore, doping with acid I has been considered in order to increase the dark resistance of the amorphous silicon film. That is, a hydrogenated amorphous silicon oxide film (a-8t:C
), the resistance in the dark can be increased to 1013 Ωm or more by controlling the O2 concentration. However, at the same time, the resistance when irradiated with light is 1o11Ω (1)
As a result, it cannot be used as an electrophotographic photoreceptor because sufficient photosensitivity cannot be obtained.

〔発明の目的〕[Purpose of the invention]

本発明は上記事情にもとすいてなされたものでその目的
とするところは、帯電特性、暗減衰特性および光感度特
性に優れた電子写真感光体を提供することにある。The present invention has been made in view of the above circumstances, and its object is to provide an electrophotographic photoreceptor having excellent charging characteristics, dark decay characteristics, and photosensitivity characteristics.

〔発明の概要〕[Summary of the invention]

本発明は、導電性基板上に、酸素とシリコンを含むガス
との混合ガスのグロー放電を用いて第１の水素化アモル
ファスシリコン酸化膜を形成し、この第１の水素化アモ
ルファスシリコン酸化膜上に少なくともシリコンを含む
ガスのグロー族＝を用いて水素化アモルファスシリコン
膜を形成し、この水素化アモルファスシリコン膜上に上
記第１の水素化アモルファスシリコン酸化膜と同様にし
て第２の水素化アモルファスシリコン酸化膜を形成した
ことを特徴とするものである。The present invention forms a first hydrogenated amorphous silicon oxide film on a conductive substrate using glow discharge of a mixed gas containing oxygen and silicon, and forms a first hydrogenated amorphous silicon oxide film on the first hydrogenated amorphous silicon oxide film. A hydrogenated amorphous silicon film is formed using a glow group gas containing at least silicon, and a second hydrogenated amorphous silicon oxide film is formed on the hydrogenated amorphous silicon film in the same manner as the first hydrogenated amorphous silicon oxide film. It is characterized by forming a silicon oxide film.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を図面を参照しながら説明する
。第１図は本発明に係る電子写真感光体の製造装置を示
すもので、図中１はベースであり、このベース１上には
真空チャンバ２が設けられている。チャンバ２内には対
向電極３が設けられ、この対向電極３の内部にはガス通
路４が設けられている。また、対向電極３０円周面には
上記ガス通路４に連通ずる噴出孔５が多数穿設され、さ
らに上記ガス通路４にはガス導入管６が接続されている
。このガス導入管６にはバルブ７が配設されているとと
もに、このバルブ７よシ上流側において、シラン（Ｓ　
１Ｈ４）ガスボンベ８および酸素（０２）ボンベ９がそ
れぞれのバルブ１ｏ、１ノを介して接続されていて、バ
ルブ１ｏ、１１の開口度を調整することにより、一方の
ガスのみ、または両方のガスを必要な流量でチャンバ２
内にバルブ７を介して導入することができるようになっ
ている。また、上記チャンバ２内の底部には図示し々い
モータによって駆動されるターンテーブル１２が設ケラ
れ、このターンテーブル１２上には導電性基板としての
ＡＩ！ドラム基板１３が配置されているとともにヒータ
１４が上記Ａｌドラム基板１３内に固設されている。ま
た、上記ベース１には上記チャンバ２内と連通ずる排出
管１５が接続され、この排出管１５には拡散ポンプ１６
およびロータリーポンプ１７が配設されている。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows an apparatus for manufacturing an electrophotographic photoreceptor according to the present invention. In the figure, 1 is a base, and a vacuum chamber 2 is provided on the base 1. As shown in FIG. A counter electrode 3 is provided within the chamber 2, and a gas passage 4 is provided inside the counter electrode 3. Further, a large number of ejection holes 5 communicating with the gas passage 4 are provided on the circumferential surface of the counter electrode 30, and a gas introduction pipe 6 is further connected to the gas passage 4. This gas introduction pipe 6 is provided with a valve 7, and on the upstream side of this valve 7, silane (S
1H4) Gas cylinder 8 and oxygen (02) cylinder 9 are connected through respective valves 1o and 1no, and by adjusting the opening degree of valves 1o and 11, only one gas or both gases can be supplied. chamber 2 at the required flow rate.
It can be introduced into the interior via a valve 7. Further, a turntable 12 driven by a motor (not shown) is installed at the bottom of the chamber 2, and on this turntable 12 is placed an AI! A drum substrate 13 is arranged, and a heater 14 is fixedly installed inside the Al drum substrate 13. Further, a discharge pipe 15 communicating with the inside of the chamber 2 is connected to the base 1, and a diffusion pump 16 is connected to the discharge pipe 15.
and a rotary pump 17 are provided.

しかして、チャンバ２内にセットしたＡｌドラム基板１
３をヒータ１４で加熱し、２５０℃に保持し、導入管６
を介して酸素（ｏ２ガス）と、シリコンを含むガスであ
るところの純シランガスとの混合ガスをチャンバ２内に
導入する。このとき、混合ガスはシランガスに対して流
上；比で０５係以上の酸素を含み、またシランガスの流
量は５０ｓｅｃＭとする。Therefore, the Al drum substrate 1 set in the chamber 2
3 is heated with a heater 14 and maintained at 250°C, and the introduction tube 6 is heated.
A mixed gas of oxygen (O2 gas) and pure silane gas, which is a gas containing silicon, is introduced into the chamber 2 through the chamber 2. At this time, the mixed gas contains oxygen with an upstream ratio of 05 or more relative to the silane gas, and the flow rate of the silane gas is 50 secM.

ついで、チャンバ２内を０．１　Ｔｏｒｒに減圧したと
ころでラジオフレクエンシー１１を源１８を動作せしめ
、対向電極３にＩＯＷの高周波電力を印加し１、チャン
バ２内のガスをグロー族Ｔｌｉによるプラズマ状態とし
、１５分開成膜を行なう。その結果、第２図に示すよう
に、ｈ／ドラム基板１３上には第１の水素化アモルファ
スシリコン酸化膜１９が厚さ０．１μｍμｍ酸形成る。Next, when the pressure inside the chamber 2 is reduced to 0.1 Torr, the source 18 of the radio frequency 11 is activated, and the high frequency power of IOW is applied to the counter electrode 3 1, and the gas inside the chamber 2 is turned into plasma by glow group Tli. Then, open film formation was performed for 15 minutes. As a result, as shown in FIG. 2, a first hydrogenated amorphous silicon oxide film 19 with a thickness of 0.1 μm is formed on the h/drum substrate 13.

ついで、酸素（０２ガス）のみ流入を止めて、同一圧力
にて、高周波電力を１００Ｗ印加し、グロー放電を生ぜ
しめ、チャンバ２内のガスをプラズマ状態とする。この
状態を５時間維持し、第１の水素化アモルファスシリコ
ン酸化膜１９上に水素化アモルファスシリコン膜２ｏが
厚さ１５μｍ形成される。Next, the inflow of only oxygen (02 gas) is stopped, and high frequency power of 100 W is applied at the same pressure to generate glow discharge and bring the gas in the chamber 2 into a plasma state. This state is maintained for 5 hours, and a hydrogenated amorphous silicon film 2o with a thickness of 15 μm is formed on the first hydrogenated amorphous silicon oxide film 19.

ついで、最初と同じ状態、すなわち、シランガスに加え
て酸素を混入せしめ、高周波電力を１０Ｗとして、成膜
を１５分間行なうと、上記水素化アモルファスシリコン
膜２ｏ上に第２の水素化アモルファスシリコン酸化膜２
１が形成される。Then, when film formation is carried out for 15 minutes under the same conditions as the beginning, that is, oxygen is mixed in addition to silane gas and the high frequency power is set to 10 W, a second hydrogenated amorphous silicon oxide film is formed on the hydrogenated amorphous silicon film 2o. 2
1 is formed.

このようにして製造される電子写真感光体は、第１と第
２の水素化アモルファスシリコンＲ化膜１９，２０が導
電性基板１３からの電荷の注入、表面電荷の流出を阻止
し、暗抵抗を大きくして電荷保持能力を高め光電荷注入
阻止機能を持ち、水素化アモルファスシリコン膜２０が
光を受けて電荷を発生し光導電体としての作用をなす電
荷発生機能を持つため、優れた帯電特性、暗減衰特性お
よび光感度特性を示す。The electrophotographic photoreceptor manufactured in this manner has dark resistance because the first and second hydrogenated amorphous silicon R films 19 and 20 prevent the injection of charge from the conductive substrate 13 and the outflow of surface charge. The hydrogenated amorphous silicon film 20 has a charge generation function that generates charge upon receiving light and acts as a photoconductor, resulting in excellent charging performance. characteristics, dark decay characteristics and light sensitivity characteristics.

なお、この感光体に＋８ｋＶのコロナ放電を行った時の
表面電位と１００ルツクス照射後の露光残留電位の変化
を０２流景比に対し、てプロットし第２図に示す。The changes in the surface potential when a +8 kV corona discharge was applied to this photoreceptor and the exposure residual potential after 100 lux irradiation are plotted against the 02 landscape ratio and are shown in FIG.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、導電性基板上に酸
素とシリコンを含むガスとの混合ガスのグロー放電を用
いて第１の水素化アモルファスシリコン酸化膜を形成し
、この第１の水素化アモルファスシリコン酸化膜上に少
なくともシリコンを含むガスのグロー放電を用いて水素
化アモルファスシリコン膜を形成し、この水素化アモル
ファスシリコン膜上に上記第１の水素化アモルファスシ
リコン酸化膜と同様にして第２の水素化アモルファスシ
リコン酸化膜を形成したから、優れた帯電特性、暗減衰
特性および光感度特性を得ることができる等優れた効果
を奏する。As explained above, according to the present invention, a first hydrogenated amorphous silicon oxide film is formed on a conductive substrate using glow discharge of a mixed gas of oxygen and silicon-containing gas, and the first hydrogenated amorphous silicon oxide film is A hydrogenated amorphous silicon oxide film is formed on the hydrogenated amorphous silicon oxide film using glow discharge of a gas containing at least silicon, and a hydrogenated amorphous silicon oxide film is formed on the hydrogenated amorphous silicon film in the same manner as the first hydrogenated amorphous silicon oxide film. Since the hydrogenated amorphous silicon oxide film of No. 2 is formed, excellent effects such as excellent charging characteristics, dark decay characteristics, and photosensitivity characteristics can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明に係る電子写真感光体の製造装置の一実
施例を示す縦断正面図、第２図は同装置によシ製造され
た電子写真感光体を示す断面図、第３図は５ＩＩ（４ガ
スに対する０２ガス流量比と表面電位および残留電位と
のそれぞれの関係を示す図である。 １３・・・導電性基板（Ａｔドラム基板）、Ｚ９・・・
第１の水素化アモルファスシリコン酸化膜、２０・・・
水素化アモルファスシリコンＢ、２ｚ・・・第２の水素
化アモルファスシリコン酸化膜。 出願人代理人　　弁理士　鈴　江　武　彦第１図 手続補正書 ５８，５．１３ 昭和　　　年　　　月　　　目 特許庁長官　若杉和夫　殿 １、事件の表示 特願昭５７−１７４３１９号 ２・　発明の名称 ′重子写真感光体 ３、補正をする渚 事件との関係　　特許出願人 （３０７）　　東京芝浦電気株式会社 ４、代Ｊ４１（人 （５，′ｆ市止り文・］象 明細書 ７、補正の内容 （１）　　明細書、第２頁第１７行月〜第１８行目の「
水素化アモルファスシリコン（ａ−ｓ　ｉ　；Ｈ）　Ｉ
Ｉか」を「水素化アモルファスシリコン（ａ−８ｉ：Ｈ
）膜１と訂正する。 （２）　　明細書、第３Ｌ１第５行目〜第６行−の「水
素化アモルファス−ノリコン酸化膜（ａ−８ｉ：０．１
４膜）」ヲ［水素化アモルファスシリコン酸化１摸（ａ
−８ｉ：Ｏ：Ｊ−］膜）」と訂正する。FIG. 1 is a longitudinal sectional front view showing an embodiment of an electrophotographic photoreceptor manufacturing apparatus according to the present invention, FIG. 2 is a sectional view showing an electrophotographic photoreceptor manufactured by the same apparatus, and FIG. 5II (This is a diagram showing the relationship between the 02 gas flow rate ratio to the 4 gases, the surface potential, and the residual potential. 13... Conductive substrate (At drum substrate), Z9...
First hydrogenated amorphous silicon oxide film, 20...
Hydrogenated amorphous silicon B, 2z...second hydrogenated amorphous silicon oxide film. Applicant's Representative Patent Attorney Takehiko Suzue Figure 1 Procedural Amendment 58, 5.13 Showa Year/Month Director of the Patent Office Kazuo Wakasugi 1. Indication of Case Patent Application No. 174319/1982 2. Name of Invention 'Shigeko' Photographic photoconductor 3, relation to the Nagisa case for amendment Patent applicant (307) Tokyo Shibaura Electric Co., Ltd. 4, representative J41 (person (5, 'f city end sentence) Elephant specification 7, contents of amendment (1) ) Specification, page 2, line 17 to line 18, “
Hydrogenated amorphous silicon (as i ; H) I
I?” to “Hydrogenated amorphous silicon (a-8i:H
) Corrected as membrane 1. (2) “Hydrogenated amorphous-silicon oxide film (a-8i: 0.1
4 films)" [Hydrogenated amorphous silicon oxide 1 film (a
-8i:O:J-] film)”.

Claims (2)

【特許請求の範囲】[Claims] （１）導Ｅ性基板上に酸素とシリコンを含むガスとの混
合ガスのグロー放電を用いて第１の水素化アモルファス
シリコン酸化膜を形成し、この第１の水素化アモルファ
スシリコン酸化膜上に少なくともシリコンを含むガスの
グロー放電を用いて水素化アモルファスシリコン膜を形
成し、この水素化アモルファスシリコン膜上に上記第１
の水素化アモルファスシリコン酸化ｊ摸と同様にして第
２の水素化アモルファスシリコン酸化膜を形成したこと
を特徴とする電子写真感光体。(1) A first hydrogenated amorphous silicon oxide film is formed on the electroconductive substrate using glow discharge of a mixed gas of oxygen and silicon-containing gas, and the first hydrogenated amorphous silicon oxide film is formed on the first hydrogenated amorphous silicon oxide film. A hydrogenated amorphous silicon film is formed using glow discharge of a gas containing at least silicon, and the first hydrogenated amorphous silicon film is formed on the hydrogenated amorphous silicon film.
An electrophotographic photoreceptor characterized in that a second hydrogenated amorphous silicon oxide film is formed in the same manner as the hydrogenated amorphous silicon oxide film described above. （２）　　混合ガスはシリコンを含むガスに対して流量
比で０．５％以上の酸素を含むｑテｒ「請求の範＋７１
１第１項記載の電子写真感光体。(2) The mixed gas is a qter "Claim +71" containing 0.5% or more oxygen in flow rate ratio to the gas containing silicon
1. The electrophotographic photoreceptor according to item 1.
JP17431982A 1982-10-04 1982-10-04 Electrophotographic receptor Granted JPS5962863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17431982A JPS5962863A (en) 1982-10-04 1982-10-04 Electrophotographic receptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17431982A JPS5962863A (en) 1982-10-04 1982-10-04 Electrophotographic receptor

Publications (2)

Publication Number Publication Date
JPS5962863A true JPS5962863A (en) 1984-04-10
JPH0350264B2 JPH0350264B2 (en) 1991-08-01

Family

ID=15976564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17431982A Granted JPS5962863A (en) 1982-10-04 1982-10-04 Electrophotographic receptor

Country Status (1)

Country Link
JP (1) JPS5962863A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101634093B1 (en) * 2012-08-09 2016-06-28 봇슈 가부시키가이샤 Pressure sensor type glow plug

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115557A (en) * 1981-01-09 1982-07-19 Canon Inc Photoconductive material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115557A (en) * 1981-01-09 1982-07-19 Canon Inc Photoconductive material

Also Published As

Publication number Publication date
JPH0350264B2 (en) 1991-08-01

Similar Documents

Publication Publication Date Title
USRE35198E (en) Image forming member for electrophotography
JPS5888753A (en) Electrophotographic photoreceptor
US4632894A (en) Photoconductive device having photoconductive layer containing hydroxyl radicals
US4613556A (en) Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide
JPS649623B2 (en)
US4641168A (en) Light sensitive semiconductor device for holding electrical charge therein
JPS5962863A (en) Electrophotographic receptor
JPS6318749B2 (en)
US4698288A (en) Electrophotographic imaging members having a ground plane of hydrogenated amorphous silicon
JPS58171053A (en) Photoreceptor
JP2508654B2 (en) Electrophotographic photoreceptor
JPH01204057A (en) Manufacture of electrophotographic sensitive body
JPS6022382A (en) Photoconductive member
JPS61110152A (en) Photosensitive body
JPH0647738B2 (en) Method for forming deposited film by plasma CVD method
JPH0338584B2 (en)
JPS62215276A (en) Electrophotographic sensitive body
JPS61130956A (en) Electrophotographic sensitive body
JPS59109058A (en) Electrophotographic sensitive body
JPH0334060B2 (en)
JPS62182747A (en) Electrophotographic sensitive body and its preparation
JPS6263937A (en) Photosensitive body
JPS61137159A (en) Electrophotographic sensitive body
JPS61182052A (en) Photosensitive body and copying method using it
JPH0554673B2 (en)