JPS5717180A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS5717180A
JPS5717180A JP9202080A JP9202080A JPS5717180A JP S5717180 A JPS5717180 A JP S5717180A JP 9202080 A JP9202080 A JP 9202080A JP 9202080 A JP9202080 A JP 9202080A JP S5717180 A JPS5717180 A JP S5717180A
Authority
JP
Japan
Prior art keywords
oxygen
sif4
sih4
semiconductor element
shall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9202080A
Other languages
Japanese (ja)
Inventor
Shinichiro Ishihara
Koshiro Mori
Tsuneo Tanaka
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9202080A priority Critical patent/JPS5717180A/en
Priority to EP81100992A priority patent/EP0035146B1/en
Priority to DE8181100992T priority patent/DE3176910D1/en
Publication of JPS5717180A publication Critical patent/JPS5717180A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To obtain the semiconductor element, which is excellent in light absorption, the efficiency of charge transport, sensitivity, etc., by constituting a P type layer of the PIN semiconductor element so that the atomicity ratio of oxygen in acceptor impurities to Si in amouphous silicon is 0.04 or lower. CONSTITUTION:In a photoelectromotive force element, a photoconductive element, etc. with PIN structure, oxygen is added into the P type layer. For example, the element with large optical forbidden band width is manufactured by adding a proper amount of oxygen into P type a-Si (H.F) obtained by simultaneously decomposing SiH4, SiF4 or a mixed gas of SiH4 and SiF4 or the like together with a doping gas such as B2H6. The volume ratio of oxygen in an a-Si (H.F.O) film to SiH4 or SiF4 shall be 8% or lower, and the atomicity ratio of oxygen to Si shall be 0.04 or lower.
JP9202080A 1980-02-15 1980-07-04 Semiconductor element Pending JPS5717180A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9202080A JPS5717180A (en) 1980-07-04 1980-07-04 Semiconductor element
EP81100992A EP0035146B1 (en) 1980-02-15 1981-02-12 Semiconductor photoelectric device
DE8181100992T DE3176910D1 (en) 1980-02-15 1981-02-12 Semiconductor photoelectric device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9202080A JPS5717180A (en) 1980-07-04 1980-07-04 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS5717180A true JPS5717180A (en) 1982-01-28

Family

ID=14042844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9202080A Pending JPS5717180A (en) 1980-02-15 1980-07-04 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5717180A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171056A (en) * 1982-03-31 1983-10-07 Kyocera Corp Electrophotographic receptor
JPS58172650A (en) * 1982-04-02 1983-10-11 Kyocera Corp Electrophotographic receptor
US5521400A (en) * 1982-08-24 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device with low sodium concentration
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171056A (en) * 1982-03-31 1983-10-07 Kyocera Corp Electrophotographic receptor
JPH0514272B2 (en) * 1982-03-31 1993-02-24 Kyosera Kk
JPS58172650A (en) * 1982-04-02 1983-10-11 Kyocera Corp Electrophotographic receptor
JPH0514273B2 (en) * 1982-04-02 1993-02-24 Kyosera Kk
US5521400A (en) * 1982-08-24 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device with low sodium concentration
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
US5556794A (en) * 1985-05-07 1996-09-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having low sodium concentration
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer

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