IE812064L - Increasing the band gap in photoresponsive amorphous alloys¹and devices - Google Patents
Increasing the band gap in photoresponsive amorphous alloys¹and devicesInfo
- Publication number
- IE812064L IE812064L IE812064A IE206481A IE812064L IE 812064 L IE812064 L IE 812064L IE 812064 A IE812064 A IE 812064A IE 206481 A IE206481 A IE 206481A IE 812064 L IE812064 L IE 812064L
- Authority
- IE
- Ireland
- Prior art keywords
- band gap
- devices
- alloys1and
- increasing
- photoresponsive amorphous
- Prior art date
Links
- 239000000463 material Substances 0.000 abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000003607 modifier Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1604—Amorphous materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A semiconductor material comprises amorphous Si containing F (a- Si: F) together with a band gap increasing modifier (e.g. C or N). H may also be incorporated in the material which may be doped. The material may be used in Schottky, MIS and PIN solar cells or in photoconductive or electrophotographic devices.
[GB2083704A]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/185,520 US4342044A (en) | 1978-03-08 | 1980-09-09 | Method for optimizing photoresponsive amorphous alloys and devices |
US20647680A | 1980-11-13 | 1980-11-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
IE812064L true IE812064L (en) | 1982-03-09 |
IE52208B1 IE52208B1 (en) | 1987-08-05 |
Family
ID=26881209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IE2064/81A IE52208B1 (en) | 1980-09-09 | 1981-09-07 | Method for increasing the band gap in photoresponsive amorphous alloys and devices |
Country Status (14)
Country | Link |
---|---|
KR (1) | KR890000479B1 (en) |
AU (1) | AU541939B2 (en) |
BR (1) | BR8105746A (en) |
CA (1) | CA1192817A (en) |
DE (1) | DE3135412C2 (en) |
ES (1) | ES8302362A1 (en) |
FR (1) | FR2490019B1 (en) |
GB (1) | GB2083704B (en) |
IE (1) | IE52208B1 (en) |
IL (1) | IL63755A (en) |
IN (1) | IN157494B (en) |
IT (1) | IT1138204B (en) |
NL (1) | NL8104139A (en) |
SE (1) | SE8105278L (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
NL8104140A (en) * | 1980-09-09 | 1982-04-01 | Energy Conversion Devices Inc | METHOD FOR MANUFACTURING AMORPHIC SEMICONDUCTOR DEVICES WITH IMPROVED PHOTOSENSITIVE PROPERTIES AND EQUIPMENT OBTAINED AS SUCH. |
GB2083705B (en) * | 1980-09-09 | 1985-07-03 | Energy Conversion Devices Inc | Stacked photoresponsive cells of amorphous semiconductors |
US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
JPS59111152A (en) * | 1982-12-16 | 1984-06-27 | Sharp Corp | Photosensitive body for electrophotography |
GB2137810B (en) * | 1983-03-08 | 1986-10-22 | Agency Ind Science Techn | A solar cell of amorphous silicon |
US4572882A (en) * | 1983-09-09 | 1986-02-25 | Canon Kabushiki Kaisha | Photoconductive member containing amorphous silicon and germanium |
ATE70665T1 (en) * | 1984-02-14 | 1992-01-15 | Energy Conversion Devices Inc | PROCESS FOR MAKING A PHOTOCONDUCTIVE ELEMENT. |
JPH0624238B2 (en) * | 1985-04-16 | 1994-03-30 | キヤノン株式会社 | Photosensor array manufacturing method |
CA1321660C (en) * | 1985-11-05 | 1993-08-24 | Hideo Yamagishi | Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer |
US4887134A (en) * | 1986-09-26 | 1989-12-12 | Canon Kabushiki Kaisha | Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded |
US5155567A (en) * | 1990-01-17 | 1992-10-13 | Ricoh Company, Ltd. | Amorphous photoconductive material and photosensor employing the photoconductive material |
JP3099957B2 (en) * | 1990-01-17 | 2000-10-16 | 株式会社リコー | Photoconductive member |
DE19524459A1 (en) * | 1995-07-07 | 1997-01-09 | Forschungszentrum Juelich Gmbh | Solar cell, esp. concentrator solar cell - having crystalline silicon@ layer and adjacent amorphous silicon-contg. layer with means for reducing potential barrier in vicinity of amorphous layer boundary face |
JP3119131B2 (en) * | 1995-08-01 | 2000-12-18 | トヨタ自動車株式会社 | Method for producing silicon thin film and method for producing solar cell using this method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
GB2038086A (en) * | 1978-12-19 | 1980-07-16 | Standard Telephones Cables Ltd | Amorphous semiconductor devices |
-
1981
- 1981-09-07 SE SE8105278A patent/SE8105278L/en not_active Application Discontinuation
- 1981-09-07 ES ES505269A patent/ES8302362A1/en not_active Expired
- 1981-09-07 NL NL8104139A patent/NL8104139A/en not_active Application Discontinuation
- 1981-09-07 DE DE3135412A patent/DE3135412C2/en not_active Expired
- 1981-09-07 FR FR8116957A patent/FR2490019B1/en not_active Expired
- 1981-09-07 IN IN1004/CAL/81A patent/IN157494B/en unknown
- 1981-09-07 GB GB8126967A patent/GB2083704B/en not_active Expired
- 1981-09-07 IE IE2064/81A patent/IE52208B1/en not_active IP Right Cessation
- 1981-09-07 IL IL63755A patent/IL63755A/en unknown
- 1981-09-07 KR KR1019810003329A patent/KR890000479B1/en active
- 1981-09-07 IT IT23828/81A patent/IT1138204B/en active
- 1981-09-08 AU AU75020/81A patent/AU541939B2/en not_active Expired
- 1981-09-08 BR BR8105746A patent/BR8105746A/en not_active IP Right Cessation
- 1981-09-08 CA CA000385389A patent/CA1192817A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IL63755A0 (en) | 1981-12-31 |
IT1138204B (en) | 1986-09-17 |
GB2083704B (en) | 1985-08-21 |
AU7502081A (en) | 1982-03-18 |
IT8123828A0 (en) | 1981-09-07 |
SE8105278L (en) | 1982-03-10 |
ES505269A0 (en) | 1982-12-16 |
IN157494B (en) | 1986-04-12 |
KR890000479B1 (en) | 1989-03-18 |
AU541939B2 (en) | 1985-01-31 |
IE52208B1 (en) | 1987-08-05 |
FR2490019B1 (en) | 1985-10-31 |
DE3135412A1 (en) | 1982-08-12 |
KR830008407A (en) | 1983-11-18 |
GB2083704A (en) | 1982-03-24 |
CA1192817A (en) | 1985-09-03 |
DE3135412C2 (en) | 1985-11-21 |
IL63755A (en) | 1984-07-31 |
ES8302362A1 (en) | 1982-12-16 |
FR2490019A1 (en) | 1982-03-12 |
BR8105746A (en) | 1982-05-25 |
NL8104139A (en) | 1982-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Patent lapsed |