JPS57175720A - Method for forming silicon film - Google Patents

Method for forming silicon film

Info

Publication number
JPS57175720A
JPS57175720A JP5997181A JP5997181A JPS57175720A JP S57175720 A JPS57175720 A JP S57175720A JP 5997181 A JP5997181 A JP 5997181A JP 5997181 A JP5997181 A JP 5997181A JP S57175720 A JPS57175720 A JP S57175720A
Authority
JP
Japan
Prior art keywords
gas
reaction gas
reactor
tube
evacuating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5997181A
Other languages
Japanese (ja)
Other versions
JPS6138268B2 (en
Inventor
Takeshige Ichimura
Yukio Takeda
Yoshiyuki Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUJI DENKI SOUGOU KENKYUSHO KK
Fuji Electric Co Ltd
Original Assignee
FUJI DENKI SOUGOU KENKYUSHO KK
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FUJI DENKI SOUGOU KENKYUSHO KK, Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd, Fuji Electric Manufacturing Co Ltd filed Critical FUJI DENKI SOUGOU KENKYUSHO KK
Priority to JP5997181A priority Critical patent/JPS57175720A/en
Publication of JPS57175720A publication Critical patent/JPS57175720A/en
Publication of JPS6138268B2 publication Critical patent/JPS6138268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain an Si film having reduced H2 content and improved quality, by decomposing the reaction gas to an extent that there is essentially no precipitation of Si, evacuating the contained H2 selectively, feeding the reaction gas to the evacuated reactor, and carrying out the plasma CVD. CONSTITUTION:The reaction gas comprising SiH4 gas and optionally mixed with B2H6 gas etc. is fed to the reactor 1 through the opening 13 of the gas inlet tube 6. The SiH4 gas is decomposed by the silent discharge in the decomposing chamber 12 to an extent that there is no precipitation of Si, and introduced into the double-walled tube. H2 gas existing in the reaction gas is removed in the double-walled tube by evacuating through the hydrogen-permeable membrane 9 to reduce the H2 content of the reaction gas. The reaction gas is sent to the reactor 1 evacuated through the evacuation tube 8 to a required degree of vacuum, and decomposed by the glow discharge generated by imposing electrical potential between the upper and the lower electrodes 2,4. An Si film is deposited on the substrate plate 5 heated with the heater 3.
JP5997181A 1981-04-21 1981-04-21 Method for forming silicon film Granted JPS57175720A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5997181A JPS57175720A (en) 1981-04-21 1981-04-21 Method for forming silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5997181A JPS57175720A (en) 1981-04-21 1981-04-21 Method for forming silicon film

Publications (2)

Publication Number Publication Date
JPS57175720A true JPS57175720A (en) 1982-10-28
JPS6138268B2 JPS6138268B2 (en) 1986-08-28

Family

ID=13128559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5997181A Granted JPS57175720A (en) 1981-04-21 1981-04-21 Method for forming silicon film

Country Status (1)

Country Link
JP (1) JPS57175720A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555614A1 (en) * 1983-08-16 1985-05-31 Canon Kk PROCESS FOR FORMING A FILM ON A SUBSTRATE BY VAPOR PHASE DECOMPOSITION
WO2003074757A1 (en) * 2002-03-01 2003-09-12 The Chinese University Of Hong Kong Method for selectively removing hydrogen from molecules
EP2045358A2 (en) * 2007-09-11 2009-04-08 Näbauer, Anton Reducing the consumption of process gases during chemical gas phase separation of silicon layers during which hydrogen is produced in addition to the separating layer as a reaction product

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555614A1 (en) * 1983-08-16 1985-05-31 Canon Kk PROCESS FOR FORMING A FILM ON A SUBSTRATE BY VAPOR PHASE DECOMPOSITION
WO2003074757A1 (en) * 2002-03-01 2003-09-12 The Chinese University Of Hong Kong Method for selectively removing hydrogen from molecules
US7998537B2 (en) 2002-03-01 2011-08-16 The Chinese University Of Hong Kong Method for selectively removing hydrogen from molecules
EP2045358A2 (en) * 2007-09-11 2009-04-08 Näbauer, Anton Reducing the consumption of process gases during chemical gas phase separation of silicon layers during which hydrogen is produced in addition to the separating layer as a reaction product
EP2045358A3 (en) * 2007-09-11 2010-11-03 Näbauer, Anton Reducing the consumption of process gases during chemical gas phase deposition of silicon layers during which hydrogen is produced in addition to the layer to be deposited as a reaction product.

Also Published As

Publication number Publication date
JPS6138268B2 (en) 1986-08-28

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